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Diode Protected P-ChannelEnhancement Mode MOSFETGeneral Purpose Amplifier/Switch

3N172 / 3N173

FEATURES

High Input Impedance Diode Protected Gate

ABSOLUTE MAXIMUM RATINGS(TA = 25

oC unless otherwise specified)

Drain-Source or Drain-Gate Voltage3N172. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 40V3N173. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30V

Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50mAGate Forward Current . . . . . . . . . . . . . . . . . . . . . . . . . . . 10AGate Reverse Current . . . . . . . . . . . . . . . . . . . . . . . . . . . 1mAStorage Temperature . . . . . . . . . . . . . . . . . . -65oC to +200oC

Operating Temperature . . . . . . . . . . . . . . . . . -55

o

C to +150

o

CLead Temperature (Soldering, 10sec) . . . . . . . . . . . . . +300oCPower Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . 375mW

Derate above 25oC . . . . . . . . . . . . . . . . . . . . . . . 3.0mW/oC

NOTE: Stresses above those listed under "Absolute MaximumRatings" may cause permanent damage to the device. These arestress ratings only and functional operation of the device at these orany other conditions above those indicated in the operational sectionsof the specifications is not implied. Exposure to absolute maximumrating conditions for extended periods may affect device reliability.

ORDERING INFORMATION

Part Package Temperature Range

3N172-73 Hermetic TO-72 -55oC to +150oCX3N172-73 Sorted Chips in Carriers -55oC to +150oC

CORPORATION

PIN CONFIGURATION

TO-72

GD

SC,B

1503Z

DEVICE SCHEMATIC

1

2

0200

3

4

ELECTRICAL CHARACTERISTICS (TA = 25oC and VBS = 0 unless otherwise specified)

SYMBOL PARAMETER3N172 3N173

UNITS TEST CONDITIONSMIN MAX MIN MAX

IGSS Gate Reverse Current-200 -500 pA VGS = -20V

-0.5 -1.0 A TA = +125oC

BVGSS Gate Breakdown Voltage -40 -125 -30 -125

V

ID = -10ABVDSS Drain-Source Breakdown Voltage -40 -30 ID = -10A

BVSDS Source-Drain Breakdown Voltage -40 -30 IS = -10A, VDB = 0

VGS(th) Threshold Voltage-2.0 -5.0 -2.0 -5.0 VDS = VGS, ID = -10A

-2.0 -5.0 -2.0 -5.0 VDS = -15V, ID = -10A

VGS Gate Source Voltage -3.0 -6.5 -2.5 -6.5 VDS = -15V, ID = -500A

IDSS Zero Gate Voltage Drain Current -0.4 -10nA

VDS = -15V, VGS = 0

ISDS Zero Gate Voltage Source Current -0.4 -10 VSD = -15V, VDB = 0, VGD = 0

rDS(on) Drain Source On Resistance 250 350 ohms VGS = -20V, ID = -100A

ID(on) On Drain Current -5.0 -30 -5.0 -30 mA VDS = -15V, VGS = -10V

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3N172 / 3N173

CORPORATION

SMALL-SIGNAL ELECTRICAL CHARACTERISTICS TA = 25oC and Bulk (substrate) Lead Connected to Source

SYMBOL PARAMETER3N172 3N173

UNITS TEST CONDITIONSMIN MAX MIN MAX

| yfs |Magnitude of Small-Signal, Common-Source,Short-Circuit, Forward Transadmittance*

1500 4000 1000 4000 S VDS = -15V, ID = -10mA, f = 1kHz

| yos |Magnitude of Small-Signal, Common-Source,Short-Circuit, Output Admittance*

250 250 S VDS = -15V, ID = -10mA, f = 1kHz

CissSmall-Signal, Common-Source, Short-Circuit,Input Capacitance*

3.5 3.5 pF VDS = -15V, ID = -10mA, f = 1MHz

CrssSmall-Signal, Common-Source, Short-Circuit,Reverse Transfer Capacitance*

1.0 1.0 pF VDS = -15V, ID = -10mA, f = 1MHz

CossSmall-Signal, Common-Source, Short-Circuit,Output Capacitance*

3.0 3.0 pF VDS = -15V, ID = -10mA, f = 1MHz

NOISE CHARACTERISTICS

SYMBOL PARAMETER TYPICAL UNITS TEST CONDITIONS

NF Common-Source Spot Noise Figure 1.0 dB VDS = -15V, ID = -1mA, f = 1kHz, RG = 1M

SWITCHING CHARACTERISTICS TA = 25oC Bulk (substrate) Lead Connected to Source

SYMBOL PARAMETER3N172 3N173

UNITS TEST CONDITIONSMIN MAX MIN MAX

td (on) Turn-On Delay Time* 12 12

ns

VDD = -15V, ID (on) = -10mA

tr Rise Time* 24 24 RG = RL = 1.4k

toff Turn-Off Delay Time* 50 50 See Test Circuit Below

*Registered JEDEC Data

SWITCHING TIME DETAIL

-0V

-1V

-15V

10%50% 50%

90%

90%

10%

PULSE

WIDTH

90%

0210

MEASUREMENTS ON SAMPLING OSCILLOSCOPE WITH

INPUT PULSE

riset < 2ns

PULSE WIDTH

riset < 0.2ns

inC

inR

VIN

VOUT

4(on)t

rt

offt

IN-V

> 200ns

< 2.0pF

> 10M

0220

D.U.T.

VDD

RL

VOUTRG

50

VIN

-0.1 -0.5 -1.0 -5.0 -10

SWITCHINGTIS-nSEC

SWITCHING TIMES vs. ON-STATE

DRAIN CURRENT

ON-STATE DRAIN CURRENT - (I D(on) ) - mA

td(on)

rise

toff

G = RL = 1.4KR

VDD = 15V

0230

1000

500

1.0

t

5.0

100

50

10

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