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OptiMOSTM

OptiMOSTM5Power-Transistor,150VBSC110N15NS5

DataSheetRev.2.1Final

PowerManagement&Multimarket

2

OptiMOSTM5Power-Transistor,150V

BSC110N15NS5

Rev.2.1,2015-06-09Final Data Sheet

12

34

56

78

43

21

56

78

SuperSO8

8 D

7 D

6 D

5 D

S 1

S 2

S 3

G 4

1DescriptionFeatures•N-channel,normallevel•ExcellentgatechargexRDS(on)product(FOM)•Verylowon-resistanceRDS(on)•150°Coperatingtemperature•Pb-freeleadplating;RoHScompliant•QualifiedaccordingtoJEDEC1)fortargetapplication•Idealforhigh-frequencyswitchingandsynchronousrectification

Table1KeyPerformanceParametersParameter Value UnitVDS 150 V

RDS(on),max 11 mΩ

ID 76 A

QOSS 78 nC

QG (0V..10V) 28 nC

QSW 11.5 nC

Type/OrderingCode Package Marking RelatedLinksBSC110N15NS5 PG-TDSON-8 110N15NS -

1) J-STD20 and JESD22

3


BSC110N15NS5


TableofContentsDescription . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2

Maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4

Thermal characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4

Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5

Electrical characteristics diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7

Package Outlines . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11

Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12

Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12

4


BSC110N15NS5


2MaximumratingsatTj=25°C,unlessotherwisespecified

Table2MaximumratingsValues

Min. Typ. Max.Parameter Symbol Unit Note/TestCondition

Continuous drain current ID --

--

7648 A TC=25°C

TC=100°C

Pulsed drain current1) ID,pulse - - 304 A TC=25°C

Avalanche energy, single pulse2) EAS - - 100 mJ ID=50A,RGS=25Ω

Gate source voltage VGS -20 - 20 V -

Power dissipation Ptot - - 125 W TC=25°C

Operating and storage temperature Tj,Tstg -55 - 150 °C IEC climatic category;DIN IEC 68-1: 55/150/56

3Thermalcharacteristics

Table3ThermalcharacteristicsValues


Thermal resistance, junction - case RthJC - 0.6 1 K/W -

Thermal resistance, junction - ambient,6 cm2 cooling area3) RthJA - - 50 K/W -

1) See figure 3 for more detailed information2) See figure 13 for more detailed information3) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain connection.PCB is vertical in still air.

5


BSC110N15NS5


4Electricalcharacteristics

Table4StaticcharacteristicsValues


Drain-source breakdown voltage V(BR)DSS 150 - - V VGS=0V,ID=1mA

Gate threshold voltage VGS(th) 3 3.8 4.6 V VDS=VGS,ID=91µA

Zero gate voltage drain current IDSS --

0.110

1100 µA VDS=120V,VGS=0V,Tj=25°C

VDS=120V,VGS=0V,Tj=125°C

Gate-source leakage current IGSS - 1 100 nA VGS=20V,VDS=0V

Drain-source on-state resistance RDS(on)--

910

1111.5 mΩ VGS=10V,ID=38A,

VGS=8V,ID=19A,

Gate resistance1) RG - 0.9 1.35 Ω -

Transconductance gfs 29 58 - S |VDS|>2|ID|RDS(on)max,ID=38A

Table5DynamiccharacteristicsValues


Input capacitance1) Ciss - 2080 2770 pF VGS=0V,VDS=75V,f=1MHz

Output capacitance1) Coss - 515 685 pF VGS=0V,VDS=75V,f=1MHz

Reverse transfer capacitance1) Crss - 13 23 pF VGS=0V,VDS=75V,f=1MHz

Turn-on delay time td(on) - 10.3 - ns VDD=75V,VGS=10V,ID=38A,RG,ext=3Ω

Rise time tr - 3.3 - ns VDD=75V,VGS=10V,ID=38A,RG,ext=3Ω

Turn-off delay time td(off) - 14.5 - ns VDD=75V,VGS=10V,ID=38A,RG,ext=3Ω

Fall time tf - 2.9 - ns VDD=75V,VGS=10V,ID=38A,RG,ext=3Ω

Table6Gatechargecharacteristics2)Values


Gate to source charge Qgs - 12 - nC VDD=75V,ID=38A,VGS=0to10V

Gate to drain charge1) Qgd - 5.8 9 nC VDD=75V,ID=38A,VGS=0to10V

Switching charge Qsw - 11.5 - nC VDD=75V,ID=38A,VGS=0to10V

Gate charge total1) Qg - 28 35 nC VDD=75V,ID=38A,VGS=0to10V

Gate plateau voltage Vplateau - 5.8 - V VDD=75V,ID=38A,VGS=0to10V

Output charge1) Qoss - 78 103 nC VDD=75V,VGS=0V

1) Defined by design. Not subject to production test2) See ″Gate charge waveforms″ for parameter definition

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BSC110N15NS5


Table7ReversediodeValues


Diode continous forward current IS - - 76 A TC=25°C

Diode pulse current IS,pulse - - 304 A TC=25°C

Diode forward voltage VSD - 0.88 1.2 V VGS=0V,IF=38A,Tj=25°C

Reverse recovery time1) trr - 45 90 ns VR=75V,IF=38A,diF/dt=100A/µs

Reverse recovery charge1) Qrr - 46 92 nC VR=75V,IF=38A,diF/dt=100A/µs

1) Defined by design. Not subject to production test

7


BSC110N15NS5


5Electricalcharacteristicsdiagrams

Diagram1:Powerdissipation

TC[°C]

Ptot[W

]

0 50 100 150 2000

20

40

60

80

100

120

140

Ptot=f(TC)

Diagram2:Draincurrent

TC[°C]

ID[A

]

0 50 100 150 2000

20

40

60

80

ID=f(TC);VGS≥10V

Diagram3:Safeoperatingarea

VDS[V]

ID[A

]

10-1 100 101 102 10310-2

10-1

100

101

102

103

1 µs

10 µs

100 µs

1 ms

10 ms

DC

ID=f(VDS);TC=25°C;D=0;parameter:tp

Diagram4:Max.transientthermalimpedance

tp[s]

ZthJC[K

/W]

10-5 10-4 10-3 10-2 10-1 10010-2

10-1

100

101

0.5

0.2

0.1

0.05

0.02

0.01

single pulse

ZthJC=f(tp);parameter:D=tp/T

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BSC110N15NS5


Diagram5:Typ.outputcharacteristics

VDS[V]

ID[A

]

0 1 2 3 4 50

50

100

150

8 V10 V

7 V

6.5 V

6 V

5.5 V

ID=f(VDS);Tj=25°C;parameter:VGS

Diagram6:Typ.drain-sourceonresistance

ID[A]

RDS(on

) [m

Ω]

0 40 80 120 1600

5

10

15

20

25

30

35

5.5 V6 V

6.5 V

7 V

8 V

10 V

RDS(on)=f(ID);Tj=25°C;parameter:VGS

Diagram7:Typ.transfercharacteristics

VGS[V]

ID[A

]

0 2 4 6 8 100

20

40

60

80

100

120

140

25 °C150 °C

ID=f(VGS);|VDS|>2|ID|RDS(on)max;parameter:Tj

Diagram8:Typ.forwardtransconductance

ID[A]

gfs [S]

0 20 40 60 80 1000

20

40

60

80

100

gfs=f(ID);Tj=25°C

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BSC110N15NS5


Diagram9:Drain-sourceon-stateresistance

Tj[°C]

RDS(on

) [m

Ω]

-60 -20 20 60 100 1400

5

10

15

20

25

max

10V

RDS(on)=f(Tj);ID=38A;VGS=10V

Diagram10:Typ.gatethresholdvoltage

Tj[°C]

VGS(th) [V]

-60 -20 20 60 100 1400.0

0.5

1.0

1.5

2.0

2.5

3.0

3.5

4.0

4.5

5.0

910 µA

91 µA

VGS(th)=f(Tj);VGS=VDS;parameter:ID

Diagram11:Typ.capacitances

VDS[V]

C[p

F]

0 20 40 60 80 100100

101

102

103

104

Ciss

Coss

Crss

C=f(VDS);VGS=0V;f=1MHz

Diagram12:Forwardcharacteristicsofreversediode

VSD[V]

IF [A]

0.0 0.5 1.0 1.5 2.0100

101

102

103

25 °C150 °C25°C max150°C max

IF=f(VSD);parameter:Tj

10


BSC110N15NS5


Diagram13:Avalanchecharacteristics

tAV[µs]

IAS [A]

100 101 102 103100

101

102

25 °C

100 °C

150 °C

IAS=f(tAV);RGS=25Ω;parameter:Tj(start)

Diagram14:Typ.gatecharge

Qgate[nC]

VGS [V]

0 5 10 15 20 25 300

2

4

6

8

10

30 V

75 V

120 V

VGS=f(Qgate);ID=38Apulsed;parameter:VDD

Diagram15:Drain-sourcebreakdownvoltage

Tj[°C]

VBR(DSS

) [V]

-60 -20 20 60 100 140 180135

140

145

150

155

160

165

170

VBR(DSS)=f(Tj);ID=1mA

Gate charge waveforms

11


BSC110N15NS5


6PackageOutlines

Figure1OutlinePG-TDSON-8,dimensionsinmm

12


BSC110N15NS5


RevisionHistoryBSC110N15NS5

Revision:2015-06-09,Rev.2.1

Previous Revision

Revision Date Subjects (major changes since last revision)

2.0 2015-05-26 Release of final version

2.1 2015-06-09 Update Avalanche Energy

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PublishedbyInfineonTechnologiesAG81726München,Germany©2015InfineonTechnologiesAGAllRightsReserved.

LegalDisclaimerTheinformationgiveninthisdocumentshallinnoeventberegardedasaguaranteeofconditionsorcharacteristics.Withrespecttoanyexamplesorhintsgivenherein,anytypicalvaluesstatedhereinand/oranyinformationregardingtheapplicationofthedevice,InfineonTechnologiesherebydisclaimsanyandallwarrantiesandliabilitiesofanykind,includingwithoutlimitation,warrantiesofnon-infringementofintellectualpropertyrightsofanythirdparty.

InformationForfurtherinformationontechnology,deliverytermsandconditionsandpricespleasecontactyournearestInfineonTechnologiesOffice(www.infineon.com).

WarningsDuetotechnicalrequirements,componentsmaycontaindangeroussubstances.Forinformationonthetypesinquestion,pleasecontactthenearestInfineonTechnologiesOffice.TheInfineonTechnologiescomponentdescribedinthisDataSheetmaybeusedinlife-supportdevicesorsystemsand/orautomotive,aviationandaerospaceapplicationsorsystemsonlywiththeexpresswrittenapprovalofInfineonTechnologies,ifafailureofsuchcomponentscanreasonablybeexpectedtocausethefailureofthatlife-support,automotive,aviationandaerospacedeviceorsystemortoaffectthesafetyoreffectivenessofthatdeviceorsystem.Lifesupportdevicesorsystemsareintendedtobeimplantedinthehumanbodyortosupportand/ormaintainandsustainand/orprotecthumanlife.Iftheyfail,itisreasonabletoassumethatthehealthoftheuserorotherpersonsmaybeendangered.

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