MOSFET CoolMOS™ P6 - Texas Instruments · MOSFET Metal Oxide Semiconductor Field Effect...

MOSFETMetalOxideSemiconductorFieldEffectTransistor

CoolMOS™P6600VCoolMOS™P6PowerTransistorIPx60R099P6

DataSheetRev.2.1Final

PowerManagement&Multimarket

2

600VCoolMOS™P6PowerTransistor

IPW60R099P6,IPP60R099P6,IPA60R099P6

Rev.2.1,2015-05-18Final Data Sheet

TO-247tab

TO-220 TO-220FP

DrainPin 2, Tab

GatePin 1

SourcePin 3

1DescriptionCoolMOS™isarevolutionarytechnologyforhighvoltagepowerMOSFETs,designedaccordingtothesuperjunction(SJ)principleandpioneeredbyInfineonTechnologies.CoolMOS™P6seriescombinestheexperienceoftheleadingSJMOSFETsupplierwithhighclassinnovation.TheoffereddevicesprovideallbenefitsofafastswitchingSJMOSFETwhilenotsacrificingeaseofuse.Extremelylowswitchingandconductionlossesmakeswitchingapplicationsevenmoreefficient,morecompact,lighterandcooler.

Features•IncreasedMOSFETdv/dtruggedness•ExtremelylowlossesduetoverylowFOMRdson*QgandEoss•Veryhighcommutationruggedness•Easytouse/drive•Pb-freeplating,Halogenfreemoldcompound•QualifiedforindustrialgradeapplicationsaccordingtoJEDEC(J-STD20andJESD22)

ApplicationsPFCstages,hardswitchingPWMstagesandresonantswitchingstagesfore.g.PCSilverbox,Adapter,LCD&PDPTV,Lighting,Server,TelecomandUPS.

Pleasenote:ForMOSFETparallelingtheuseofferritebeadsonthegateorseparatetotempolesisgenerallyrecommended.

Table1KeyPerformanceParametersParameter Value UnitVDS @ Tj,max 650 V

RDS(on),max 99 mΩ

Qg.typ 70 nC

ID,pulse 109 A

Eoss@400V 8.8 µJ

Body diode di/dt 300 A/µs

Type/OrderingCode Package Marking RelatedLinksIPW60R099P6 PG-TO 247

IPP60R099P6 PG-TO 220

IPA60R099P6 PG-TO 220 FullPAK

6R099P6 see Appendix A

3




TableofContentsDescription . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2

Maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4

Thermal characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5

Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6

Electrical characteristics diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8

Test Circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13

Package Outlines . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14

Appendix A . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17

Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18

Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18

4




2MaximumratingsatTj=25°C,unlessotherwisespecified

Table2MaximumratingsValues

Min. Typ. Max.Parameter Symbol Unit Note/TestCondition

Continuous drain current1) ID --

--

37.924.0 A TC=25°C

TC=100°C

Pulsed drain current2) ID,pulse - - 109 A TC=25°C

Avalanche energy, single pulse EAS - - 796 mJ ID=6.6A; VDD=50V; see table 10

Avalanche energy, repetitive EAR - - 1.21 mJ ID=6.6A; VDD=50V; see table 10

Avalanche current, repetitive IAR - - 6.6 A -

MOSFET dv/dt ruggedness dv/dt - - 100 V/ns VDS=0...400V

Gate source voltage (static) VGS -20 - 20 V static;

Gate source voltage (dynamic) VGS -30 - 30 V AC (f>1 Hz)

Power dissipation (Non FullPAK) TO-220, TO-247 Ptot - - 278 W TC=25°C

Power dissipation (FullPAK) TO-220FP Ptot - - 34 W TC=25°C

Storage temperature Tstg -55 - 150 °C -

Operating junction temperature Tj -55 - 150 °C -

Mounting torque (Non FullPAK) TO-220, TO-247 - - - 60 Ncm M3 and M3.5 screws

Mounting torque (FullPAK) TO-220FP - - - 50 Ncm M2.5 screws

Continuous diode forward current IS - - 32.9 A TC=25°C

Diode pulse current2) IS,pulse - - 109 A TC=25°C

Reverse diode dv/dt3) dv/dt - - 15 V/ns VDS=0...400V,ISD<=IS,Tj=25°Csee table 8

Maximum diode commutation speed dif/dt - - 300 A/µs VDS=0...400V,ISD<=IS,Tj=25°Csee table 8

Insulation withstand voltage forTO-220FP VISO - - 2500 V Vrms,TC=25°C,t=1min

1) Limited by Tj max. Maximum duty cycle D=0.752) Pulse width tp limited by Tj,max3)IdenticallowsideandhighsideswitchwithidenticalRG

5




3Thermalcharacteristics

Table3Thermalcharacteristics(NonFullPAK)TO-220,TO-247Values


Thermal resistance, junction - case RthJC - - 0.45 °C/W -

Thermal resistance, junction - ambient RthJA - - 62 °C/W leaded

Soldering temperature, wavesolderingonly allowed at leads Tsold - - 260 °C 1.6mm (0.063 in.) from case for 10s

Table4Thermalcharacteristics(FullPAK)TO-220FPValues


Thermal resistance, junction - case RthJC - - 3.65 °C/W -

Thermal resistance, junction - ambient RthJA - - 80 °C/W leaded

Soldering temperature, wavesolderingonly allowed at leads Tsold - - 260 °C 1.6mm (0.063 in.) from case for 10s

6




4ElectricalcharacteristicsatTj=25°C,unlessotherwisespecified

Table5StaticcharacteristicsValues


Drain-source breakdown voltage V(BR)DSS 600 - - V VGS=0V,ID=1mA

Gate threshold voltage V(GS)th 3.5 4.0 4.5 V VDS=VGS,ID=1.21mA

Zero gate voltage drain current IDSS --

-10

5- µA VDS=600,VGS=0V,Tj=25°C

VDS=600,VGS=0V,Tj=150°C

Gate-source leakage current IGSS - - 100 nA VGS=20V,VDS=0V

Drain-source on-state resistance RDS(on)--

0.0890.232

0.099- Ω VGS=10V,ID=14.5A,Tj=25°C

VGS=10V,ID=14.5A,Tj=150°C

Gate resistance RG - 1 - Ω f=1MHz,opendrain

Table6DynamiccharacteristicsValues


Input capacitance Ciss - 3330 - pF VGS=0V,VDS=100V,f=1MHz

Output capacitance Coss - 140 - pF VGS=0V,VDS=100V,f=1MHz

Effective output capacitance, energyrelated1) Co(er) - 110 - pF VGS=0V,VDS=0...400V

Effective output capacitance, timerelated2) Co(tr) - 495 - pF ID=constant,VGS=0V,VDS=0...400V

Turn-on delay time td(on) - 20 - ns VDD=400V,VGS=13V,ID=18.1A,RG=1.7Ω;seetable9

Rise time tr - 10 - ns VDD=400V,VGS=13V,ID=18.1A,RG=1.7Ω;seetable9

Turn-off delay time td(off) - 50 - ns VDD=400V,VGS=13V,ID=18.1A,RG=1.7Ω;seetable9

Fall time tf - 5 - ns VDD=400V,VGS=13V,ID=18.1A,RG=1.7Ω;seetable9

Table7GatechargecharacteristicsValues


Gate to source charge Qgs - 20 - nC VDD=400V,ID=18.1A,VGS=0to10V

Gate to drain charge Qgd - 24 - nC VDD=400V,ID=18.1A,VGS=0to10V

Gate charge total Qg - 70 - nC VDD=400V,ID=18.1A,VGS=0to10V

Gate plateau voltage Vplateau - 6.1 - V VDD=400V,ID=18.1A,VGS=0to10V

1)Co(er)isafixedcapacitancethatgivesthesamestoredenergyasCosswhileVDSisrisingfrom0to400V2)Co(tr)isafixedcapacitancethatgivesthesamechargingtimeasCosswhileVDSisrisingfrom0to400V

7




Table8ReversediodecharacteristicsValues


Diode forward voltage VSD - 0.9 - V VGS=0V,IF=18.1A,Tj=25°C

Reverse recovery time trr - 470 - ns VR=400V,IF=18.1A,diF/dt=100A/µs;see table 8

Reverse recovery charge Qrr - 9 - µC VR=400V,IF=18.1A,diF/dt=100A/µs;see table 8

Peak reverse recovery current Irrm - 37 - A VR=400V,IF=18.1A,diF/dt=100A/µs;see table 8

8




5Electricalcharacteristicsdiagrams

Diagram1:Powerdissipation(NonFullPAK)

TC[°C]

Ptot[W

]

0 25 50 75 100 125 1500

50

100

150

200

250

300

Ptot=f(TC)

Diagram2:Powerdissipation(FullPAK)

TC[°C]

Ptot[W

]

0 25 50 75 100 125 1500

5

10

15

20

25

30

35

40

Ptot=f(TC)

Diagram3:Max.transientthermalimpedance(NonFullPAK)

tp[s]

ZthJC[K

/W]

10-5 10-4 10-3 10-2 10-110-2

10-1

100

101

0.5

0.2

0.1

0.05

0.02

0.01

single pulse

ZthJC=f(tP);parameter:D=tp/T

Diagram4:Max.transientthermalimpedance(FullPAK)

tp[s]

ZthJC[K

/W]

10-5 10-4 10-3 10-2 10-1 100 10110-2

10-1

100

101

0.5

0.2

0.1

0.05

0.02

0.01

single pulse

ZthJC=f(tP);parameter:D=tp/T

9




Diagram5:Safeoperatingarea(NonFullPAK)

VDS[V]

ID[A

]

100 101 102 10310-3

10-2

10-1

100

101

102

103

1 µs

10 µs

100 µs

1 ms

10 ms

DC

ID=f(VDS);TC=25°C;D=0;parameter:tp

Diagram6:Safeoperatingarea(FullPAK)

VDS[V]

ID[A

]

100 101 102 10310-4

10-3

10-2

10-1

100

101

102

103

1 µs

10 µs

100 µs

1 ms

10 ms

DC


Diagram7:Safeoperatingarea(NonFullPAK)

VDS[V]

ID[A

]

100 101 102 10310-3

10-2

10-1

100

101

1021 µs

10 µs

100 µs

1 ms

10 ms

DC


Diagram8:Safeoperatingarea(FullPAK)

VDS[V]

ID[A

]

100 101 102 10310-4

10-3

10-2

10-1

100

101

1021 µs

10 µs

100 µs

1 ms

10 ms

DC


10




Diagram9:Typ.outputcharacteristics

VDS[V]

ID[A

]

0 5 10 15 200

10

20

30

40

50

60

70

80

90

100

110

120

20 V

10 V

8 V

7 V

6 V

5.5 V

5 V4.5 V

ID=f(VDS);Tj=25°C;parameter:VGS

Diagram10:Typ.outputcharacteristics

VDS[V]

ID[A

]

0 5 10 15 200

5

10

15

20

25

30

35

40

45

50

55

60

65

7020 V

10 V

8 V

7 V

6 V

5.5 V

5 V

4.5 V

ID=f(VDS);Tj=125°C;parameter:VGS

Diagram11:Typ.drain-sourceon-stateresistance

ID[A]

RDS(on

) [Ω]

0 5 10 15 20 25 30 35 40 45 50 55 60 65 70 75 800.15

0.20

0.25

0.30

0.35

0.40

0.45

0.50

0.55

20 V

5.5 V 6 V 6.5 V 7 V10 V

RDS(on)=f(ID);Tj=125°C;parameter:VGS

Diagram12:Drain-sourceon-stateresistance

Tj[°C]

RDS(on

) [Ω]

-50 -25 0 25 50 75 100 125 1500.05

0.10

0.15

0.20

0.25

0.30

98%typ

RDS(on)=f(Tj);ID=14.5A;VGS=10V

11




Diagram13:Typ.transfercharacteristics

VGS[V]

ID[A

]

0 2 4 6 8 10 12 140

20

40

60

80

100

120

25 °C

150 °C

ID=f(VGS);VDS=20V;parameter:Tj

Diagram14:Typ.gatecharge

Qgate[nC]

VGS [V]

0 10 20 30 40 50 60 70 800

1

2

3

4

5

6

7

8

9

10

120 V 480 V

VGS=f(Qgate);ID=18.1Apulsed;parameter:VDD

Diagram15:Forwardcharacteristicsofreversediode

VSD[V]

IF [A]

0.0 0.5 1.0 1.5 2.010-1

100

101

102

25 °C125 °C

IF=f(VSD);parameter:Tj

Diagram16:Avalancheenergy

Tj[°C]

EAS [mJ]

25 50 75 100 125 1500

100

200

300

400

500

600

700

800

EAS=f(Tj);ID=6.6A;VDD=50V

12




Diagram17:Drain-sourcebreakdownvoltage

Tj[°C]

VBR(DSS

) [V]

-75 -50 -25 0 25 50 75 100 125 150 175520

540

560

580

600

620

640

660

680

700

VBR(DSS)=f(Tj);ID=1mA

Diagram18:Typ.capacitances

VDS[V]

C[p

F]

0 100 200 300 400 500100

101

102

103

104

Ciss

Coss

Crss

C=f(VDS);VGS=0V;f=1MHz

Diagram19:Typ.Cossstoredenergy

VDS[V]

Eoss[µ

J]

0 100 200 300 400 5000

1

2

3

4

5

6

7

8

9

10

Eoss=f(VDS)

13




6TestCircuits

Table9DiodecharacteristicsTest circuit for diode characteristics Diode recovery waveform

t

V ,I

Irrm

IF

VDS

10 %Irrm

trrtF tS

QF QS

dIF / dt

dIrr / dt

VDS(peak)

Qrr = QF +QS

trr =tF +tS

VDS

IF

VDS

IF

Rg1

Rg 2

Rg1 = Rg 2

Table10SwitchingtimesSwitching times test circuit for inductive load Switching times waveform

VDS

VGS

td(on) td(off)tr

ton

tf

toff

10%

90%

VDS

VGS

Table11UnclampedinductiveloadUnclamped inductive load test circuit Unclamped inductive waveform

VDS

V(BR)DS

IDVDS

VDSID

14




7PackageOutlines

Figure1OutlinePG-TO247,dimensionsinmm/inches

15




Figure2OutlinePG-TO220,dimensionsinmm/inches

16




A2

H

b

D

c

b2

E

e1

e

L

Q

øP

L1

N

D1

A

DIM

A1

DOCUMENT NO.

Z8B00003319

2.5

REVISION

04

05-05-2014

ISSUE DATE

EUROPEAN PROJECTION

1.130

0.177

MIN

0.095

0.026

0.016

0.617

0.037

0.092

0.394

0.503

0.116

0.124

0.111

0.353

2.862.42

2.54 (BSC)

5.08

28.70

0.95

15.67

0.40

0.65

10.00

2.83

3.15

2.95

12.78

8.97

3

29.75

0.90

0.63

1.51

16.15

3.50

3.38

3.45

13.75

10.65

9.83

MILLIMETERS

MIN

4.50

2.34

MAX

4.90

2.85

0.113

0.100 (BSC)

0.200

3

1.171

0.059

0.636

0.025

0.035

0.419

0.136

0.133

0.138

0.541

0.387

0

INCHES

0.193

MAX

0.112

SCALE

5mm

0

2.5

b1 0.0370.95 1.38 0.054

b4 0.0260.65 1.51 0.059

b3 0.0260.65 1.38 0.054

Figure3OutlinePG-TO220FullPAK,dimensionsinmm/inches

17




8AppendixA

Table12RelatedLinks

• IFXCoolMOSTMP6Webpage:www.infineon.com

• IFXCoolMOSTMP6applicationnote:www.infineon.com

• IFXCoolMOSTMP6simulationmodel:www.infineon.com

• IFXDesigntools:www.infineon.com

http://www.infineon.com/cms/en/product/promopages/designtools/index.html

http://www.infineon.com/P6



18




RevisionHistoryIPW60R099P6, IPP60R099P6, IPA60R099P6

Revision:2015-05-18,Rev.2.1

Previous Revision

Revision Date Subjects (major changes since last revision)

2.0 2014-03-07 Release of final version

2.1 2015-05-18 Rdson max change from 105 to 99mOhm

WeListentoYourCommentsAnyinformationwithinthisdocumentthatyoufeeliswrong,unclearormissingatall?Yourfeedbackwillhelpustocontinuouslyimprovethequalityofthisdocument.Pleasesendyourproposal(includingareferencetothisdocument)to:[email protected]

PublishedbyInfineonTechnologiesAG81726München,Germany©2015InfineonTechnologiesAGAllRightsReserved.

LegalDisclaimerTheinformationgiveninthisdocumentshallinnoeventberegardedasaguaranteeofconditionsorcharacteristics.Withrespecttoanyexamplesorhintsgivenherein,anytypicalvaluesstatedhereinand/oranyinformationregardingtheapplicationofthedevice,InfineonTechnologiesherebydisclaimsanyandallwarrantiesandliabilitiesofanykind,includingwithoutlimitation,warrantiesofnon-infringementofintellectualpropertyrightsofanythirdparty.

InformationForfurtherinformationontechnology,deliverytermsandconditionsandpricespleasecontactyournearestInfineonTechnologiesOffice(www.infineon.com).

WarningsDuetotechnicalrequirements,componentsmaycontaindangeroussubstances.Forinformationonthetypesinquestion,pleasecontactthenearestInfineonTechnologiesOffice.TheInfineonTechnologiescomponentdescribedinthisDataSheetmaybeusedinlife-supportdevicesorsystemsand/orautomotive,aviationandaerospaceapplicationsorsystemsonlywiththeexpresswrittenapprovalofInfineonTechnologies,ifafailureofsuchcomponentscanreasonablybeexpectedtocausethefailureofthatlife-support,automotive,aviationandaerospacedeviceorsystemortoaffectthesafetyoreffectivenessofthatdeviceorsystem.Lifesupportdevicesorsystemsareintendedtobeimplantedinthehumanbodyortosupportand/ormaintainandsustainand/orprotecthumanlife.Iftheyfail,itisreasonabletoassumethatthehealthoftheuserorotherpersonsmaybeendangered.

Mouser Electronics

Authorized Distributor

Click to View Pricing, Inventory, Delivery & Lifecycle Information: Infineon:

IPP60R099P6XKSA1

http://www.mouser.com/Infineon-Technologies

http://www.mouser.com/access/?pn=IPP60R099P6XKSA1

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