MOSFET - atta.szlcsc.com
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1 BSC0702LS Rev. 2.3, 2016-10-25 Final Data Sheet 1 2 3 4 5 6 7 8 4 3 2 1 5 6 7 8 SuperSO8 8D 7D 6D 5D S1 S2 S3 G4 MOSFET OptiMOS TM Power-Transistor, 60 V Features • Ideal for high-frequency switching • Optimized for chargers • 100% avalanche tested • Superior thermal resistance • N-channel, Logic level • Pb-free lead plating; RoHS compliant • Halogen-free according to IEC61249-2-21 • Qualified for Standard Grade applications Table 1 Key Performance Parameters Parameter Value Unit VDS 60 V RDS(on),max 2.7 mΩ ID 100 A Qoss 43 nC QG(0..4.5V) 24 nC Type / Ordering Code Package Marking Related Links BSC0702LS PG-TDSON-8 0702LS -
Transcript of MOSFET - atta.szlcsc.com
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BSC0702LS
Rev.2.3,2016-10-25Final Data Sheet
12
34
56
78
43
21
56
78
SuperSO8
8 D
7 D
6 D
5 D
S 1
S 2
S 3
G 4
MOSFETOptiMOSTMPower-Transistor,60V
Features•Idealforhigh-frequencyswitching•Optimizedforchargers•100%avalanchetested•Superiorthermalresistance•N-channel,Logiclevel•Pb-freeleadplating;RoHScompliant•Halogen-freeaccordingtoIEC61249-2-21•QualifiedforStandardGradeapplications
Table1KeyPerformanceParametersParameter Value UnitVDS 60 V
RDS(on),max 2.7 mΩ
ID 100 A
Qoss 43 nC
QG(0..4.5V) 24 nC
Type/OrderingCode Package Marking RelatedLinksBSC0702LS PG-TDSON-8 0702LS -
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OptiMOSTMPower-Transistor,60VBSC0702LS
Rev.2.3,2016-10-25Final Data Sheet
TableofContentsDescription . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Thermal characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
Electrical characteristics diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
Package Outlines . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
Trademarks . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
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OptiMOSTMPower-Transistor,60VBSC0702LS
Rev.2.3,2016-10-25Final Data Sheet
1MaximumratingsatTA=25°C,unlessotherwisespecified
Table2MaximumratingsValues
Min. Typ. Max.Parameter Symbol Unit Note/TestCondition
Continuous drain current ID---
---
1008423
AVGS=10V,TC=25°CVGS=10V,TC=100°CVGS=10V,TA=25°C,RthJA=50K/W1)
Pulsed drain current2) ID,pulse - - 400 A TC=25°C
Avalanche energy, single pulse3) EAS - - 100 mJ ID=50A,RGS=25Ω
Gate source voltage VGS -20 - 20 V -
Power dissipation Ptot--
--
832.5 W TC=25°C
TA=25°C,RthJA=50K/W2)
Operating and storage temperature Tj,Tstg -55 - 150 °C IEC climatic category;DIN IEC 68-1: 55/150/56
2Thermalcharacteristics
Table3ThermalcharacteristicsValues
Min. Typ. Max.Parameter Symbol Unit Note/TestCondition
Thermal resistance, junction - case,bottom RthJC - 0.9 1.5 K/W -
Device on PCB,6 cm2 cooling area1) RthJA - - 50 K/W -
1) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drainconnection. PCB is vertical in still air.2) See Diagram 3 for more detailed information3) See Diagram 13 for more detailed information
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OptiMOSTMPower-Transistor,60VBSC0702LS
Rev.2.3,2016-10-25Final Data Sheet
3Electricalcharacteristics
Table4StaticcharacteristicsValues
Min. Typ. Max.Parameter Symbol Unit Note/TestCondition
Drain-source breakdown voltage V(BR)DSS 60 - - V VGS=0V,ID=1mA
Gate threshold voltage VGS(th) 1.1 1.7 2.3 V VDS=VGS,ID=49µA
Zero gate voltage drain current IDSS --
0.510
1100 µA VDS=60V,VGS=0V,Tj=25°C
VDS=60V,VGS=0V,Tj=125°C
Gate-source leakage current IGSS - 10 100 nA VGS=20V,VDS=0V
Drain-source on-state resistance RDS(on)--
2.33.1
2.73.9 mΩ VGS=10V,ID=50A
VGS=4.5V,ID=25A
Gate resistance1) RG - 1.3 1.95 Ω -
Transconductance gfs 60 120 - S |VDS|>2|ID|RDS(on)max,ID=50A
Table5Dynamiccharacteristics1)Values
Min. Typ. Max.Parameter Symbol Unit Note/TestCondition
Input capacitance Ciss - 3300 4400 pF VGS=0V,VDS=30V,f=1MHz
Output capacitance Coss - 670 890 pF VGS=0V,VDS=30V,f=1MHz
Reverse transfer capacitance Crss - 33 58 pF VGS=0V,VDS=30V,f=1MHz
Turn-on delay time td(on) - 7.7 - ns VDD=30V,VGS=10V,ID=50A,RG,ext=1.6Ω
Rise time tr - 4.8 - ns VDD=30V,VGS=10V,ID=50A,RG,ext=1.6Ω
Turn-off delay time td(off) - 25 - ns VDD=30V,VGS=10V,ID=50A,RG,ext=1.6Ω
Fall time tf - 5.4 - ns VDD=30V,VGS=10V,ID=50A,RG,ext=1.6Ω
Table6Gatechargecharacteristics2)Values
Min. Typ. Max.Parameter Symbol Unit Note/TestCondition
Gate to source charge Qgs - 10 - nC VDD=30V,ID=50A,VGS=0to4.5V
Gate charge at threshold Qg(th) - 6 - nC VDD=30V,ID=50A,VGS=0to4.5V
Gate to drain charge1) Qgd - 8 11 nC VDD=30V,ID=50A,VGS=0to4.5V
Switching charge Qsw - 12 - nC VDD=30V,ID=50A,VGS=0to4.5V
Gate charge total1) Qg - 24 30 nC VDD=30V,ID=50A,VGS=0to4.5V
Gate plateau voltage Vplateau - 2.9 - V VDD=30V,ID=50A,VGS=0to4.5V
Gate charge total, sync. FET Qg(sync) - 43 - nC VDS=0.1V,VGS=0to10V
Output charge1) Qoss - 43 58 nC VDD=30V,VGS=0V
1) Defined by design. Not subject to production test2) See ″Gate charge waveforms″ for parameter definition
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OptiMOSTMPower-Transistor,60VBSC0702LS
Rev.2.3,2016-10-25Final Data Sheet
Table7ReversediodeValues
Min. Typ. Max.Parameter Symbol Unit Note/TestCondition
Diode continuous forward current IS - - 69 A TC=25°C
Diode pulse current IS,pulse - - 276 A TC=25°C
Diode forward voltage VSD - 0.8 1.2 V VGS=0V,IF=50A,Tj=25°C
Reverse recovery time1) trr - 40 80 ns VR=30V,IF=50A,diF/dt=100A/µs
Reverse recovery charge1) Qrr - 36 72 nC VR=30V,IF=50A,diF/dt=100A/µs
1) Defined by design. Not subject to production test
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OptiMOSTMPower-Transistor,60VBSC0702LS
Rev.2.3,2016-10-25Final Data Sheet
4Electricalcharacteristicsdiagrams
Diagram1:Powerdissipation
TC[°C]
Ptot[W
]
0 25 50 75 100 125 150 1750
20
40
60
80
100
Ptot=f(TC)
Diagram2:Draincurrent
TC[°C]
ID[A
]
0 25 50 75 100 125 150 1750
20
40
60
80
100
120
ID=f(TC);VGS≥10V
Diagram3:Safeoperatingarea
VDS[V]
ID[A
]
10-1 100 101 10210-1
100
101
102
103
1 µs
10 µs
100 µs
1 ms
10 ms
DC
ID=f(VDS);TC=25°C;D=0;parameter:tp
Diagram4:Max.transientthermalimpedance
tp[s]
ZthJC[K
/W]
10-6 10-5 10-4 10-3 10-2 10-110-3
10-2
10-1
100
101
0.5
0.2
0.1
0.05
0.02
0.01
single pulse
ZthJC=f(tp);parameter:D=tp/T
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OptiMOSTMPower-Transistor,60VBSC0702LS
Rev.2.3,2016-10-25Final Data Sheet
Diagram5:Typ.outputcharacteristics
VDS[V]
ID[A
]
0.0 0.5 1.0 1.5 2.00
40
80
120
160
200
240
280
320
360
400
5 V
4.5 V
4 V
3.5 V
3.2 V
3 V
2.8 V
ID=f(VDS);Tj=25°C;parameter:VGS
Diagram6:Typ.drain-sourceonresistance
ID[A]
RDS(on
) [m
Ω]
0 50 100 150 200 250 300 350 4000
1
2
3
4
5
6
7
8
3 V
3.2 V
3.5 V4 V
4.5 V
5 V
7 V
10 V
RDS(on)=f(ID);Tj=25°C;parameter:VGS
Diagram7:Typ.transfercharacteristics
VGS[V]
ID[A
]
0 2 4 60
40
80
120
160
200
240
280
320
360
400
150 °C25 °C
ID=f(VGS);|VDS|>2|ID|RDS(on)max;parameter:Tj
Diagram8:Typ.forwardtransconductance
ID[A]
gfs [S]
0 20 40 60 800
40
80
120
160
gfs=f(ID);Tj=25°C
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OptiMOSTMPower-Transistor,60VBSC0702LS
Rev.2.3,2016-10-25Final Data Sheet
Diagram9:Drain-sourceon-stateresistance
Tj[°C]
RDS(on
) [m
Ω]
-60 -20 20 60 100 140 1800.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
5.0
max
typ
RDS(on)=f(Tj);ID=50A;VGS=10V
Diagram10:Typ.gatethresholdvoltage
Tj[°C]
VGS(th) [V]
-60 -20 20 60 100 140 1800
1
2
3
490 µA
49 µA
VGS(th)=f(Tj);VGS=VDS
Diagram11:Typ.capacitances
VDS[V]
C[p
F]
0 20 40 60101
102
103
104
Ciss
Coss
Crss
C=f(VDS);VGS=0V;f=1MHz
Diagram12:Forwardcharacteristicsofreversediode
VSD[V]
IF [A]
0.0 0.5 1.0 1.5 2.0100
101
102
103
25 °C150 °C25°C max150°C max
IF=f(VSD);parameter:Tj
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OptiMOSTMPower-Transistor,60VBSC0702LS
Rev.2.3,2016-10-25Final Data Sheet
Diagram13:Avalanchecharacteristics
tAV[µs]
IAV [A]
100 101 102 103100
101
102
25 °C100 °C
125 °C
IAS=f(tAV);RGS=25Ω;parameter:Tj(start)
Diagram14:Typ.gatecharge
Qgate[nC]
VGS [V]
0 10 20 30 40 500
1
2
3
4
5
6
7
8
9
10
48 V
30 V
12 V
VGS=f(Qgate);ID=50Apulsed;parameter:VDD
Diagram15:Drain-sourcebreakdownvoltage
Tj[°C]
VBR(DSS
) [V]
-60 -20 20 60 100 140 18050
55
60
65
70
VBR(DSS)=f(Tj);ID=1mA
Gate charge waveforms
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OptiMOSTMPower-Transistor,60VBSC0702LS
Rev.2.3,2016-10-25Final Data Sheet
5PackageOutlines
Figure1OutlinePG-TDSON-8,dimensionsinmm
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OptiMOSTMPower-Transistor,60VBSC0702LS
Rev.2.3,2016-10-25Final Data Sheet
Figure2OutlineFootprint(TDSON-8)
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OptiMOSTMPower-Transistor,60VBSC0702LS
Rev.2.3,2016-10-25Final Data Sheet
RevisionHistoryBSC0702LS
Revision:2016-10-25,Rev.2.3
Previous Revision
Revision Date Subjects (major changes since last revision)
2.0 2016-06-09 Release of final version
2.1 2016-06-13 Insert Rds(on) max at Vgs 4.5
2.2 2016-06-21 Delete heading on first page
2.3 2016-10-25 Update " Features "
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