MOSFET · 2020. 7. 13. · 1 IMZA65R048M1H Final Data Sheet Rev. 2.0, 2019-12-16 1 2 3 Tab 4 PG-TO...

1

IMZA65R048M1H

Rev.�2.0,��2019-12-16Final Data Sheet

12 3

Tab

4

PG-TO�247-4-3

Drain

Pin 1, Tab

Gate

Pin 4

Power

Source

Pin 2

Driver

Source

Pin 3

*1: Internal body diode

*1

MOSFET650�V�CoolSiCª�M1�SiC�Trench�Power�DeviceThe�650�V�CoolSiC™�is�built�over�the�solid�silicon�carbide�technologydeveloped�in�Infineon�in�more�than�20�years.�Leveraging�the�wide�bandgapSiC�material�characteristics,�the�650V�CoolSiC™�MOSFET�offers�a�uniquecombination�of�performance,�reliability�and�ease�of�use.�Suitable�for�hightemperature�and�harsh�operations,�it�enables�the�simplified�and�costeffective�deployment�of�the�highest�system�efficiency.

Features•�Optimized�switching�behavior�at�higher�currents•�Commutation�robust�fast�body�diode�with�low�Qrr•�Superior�gate�oxide�reliability•�Best�thermal�conductivity�and�behavior•�Lower�RDS(on)�and�pulse�current�dependency�on�temperature•�Increased�avalanche�capability•�Compatible�with�standard�drivers�(recommended�driving�voltage:�18V)•�Kelvin�source�provides�up�to�4�times�lower�switching�losses

Benefits•�Unique�combination�of�high�performance,�high�reliability�and�ease�of�use•�Ease�of�use�and�integration•�Suitable�for�topologies�with�continuous�hard�commutation•�Higher�robustness�and�system�reliability•�Efficiency�improvement•�Reduced�system�size�leading�to�higher�power�density

Potential�applications•�SMPS•�UPS�(uninterruptable�power�supplies)•�Solar�PV�inverters•�EV�charging�infrastructure•�Energy�storage�and�battery�formation•�Class�D�amplifiers

Product�validationFully�qualified�according�to�JEDEC�for�Industrial�Applications

Table�1��Key�Performance�ParametersParameter Value UnitVDS�@�TJ�=�25�°C 650 VRDS(on),typ 48 mΩ

QG,typ 33 nC

ID,pulse 100 A

Qoss�@�400�V 78 nCEoss�@�400�V 11.7 µJ

Type�/�Ordering�Code Package Marking Related�LinksIMZA65R048M1H PG-TO 247-4-3 65R048M1 see Appendix A

2

650�V�CoolSiCª�M1�SiC�Trench�Power�DeviceIMZA65R048M1H


Table�of�ContentsDescription . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1

Maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3

Thermal characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4

Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5

Electrical characteristics diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7

Test Circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12

Package Outlines . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13

Appendix A . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14

Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15

Trademarks . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15

Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15

3



1��Maximum�ratingsat�TJ�=�25�°C,�unless�otherwise�specified

Table�2��Maximum�ratingsValues

Min. Typ. Max.Parameter Symbol Unit Note�/�Test�Condition

Continuous drain current1) ID ----

3924 A

TC�=�25�°CTC�=�100�°C

Pulsed drain current2) ID,pulse - - 100 A TC�=�25�°C

Avalanche energy, single pulse EAS - - 171 mJ ID�=�6.4�A,�VDD�=�50�V,�L�=�8.3�mH;see table 10

Avalanche energy, repetitive EAR - - 0.85 mJ ID�=�6.4�A,�VDD�=�50�V;�see�table�10Avalanche current, single pulse IAS - - 6.4 A -

MOSFET�dv/dt�ruggedness dv/dt - - 200 V/ns VDS�=�0...400�V

Gate source voltage (recommendeddriving voltage) VGS 0 - 18 V AC�(f�>�1�Hz)

Gate source voltage (dynamic) VGS -5 - 23 V tpulse,negative�

4



2��Thermal�characteristics

Table�3��Thermal�characteristicsValues


Thermal resistance, junction - case RthJC - - 1.0 °C/W -

Thermal resistance, junction - ambient RthJA - - 62 °C/W leaded

Thermal resistance, junction - ambientfor SMD version RthJA - - - °C/W n.a.

Soldering temperature, wavesolderingonly allowed at leads Tsold - - 260 °C 1.6mm (0.063 in.) from case for 10s

5



3��Electrical�characteristicsat�TJ�=�25�°C,�unless�otherwise�specified

Table�4��Static�characteristicsValues


Drain-source breakdown voltage V(BR)DSS 650 - - V VGS�=�0�V,�ID�=�0.6�mAGate threshold voltage1) V(GS)th 3.5 4.5 5.7 V VDS�=�VGS,�ID�=�6�mA

Zero gate voltage drain current IDSS --12

150- µA

VDS�=�650�V,�VGS�=�0�V,�TJ�=�25�°CVDS�=�650�V,�VGS�=�0�V,�TJ�=�150�°C

Gate-source leakage current IGSS - - 100 nA VGS�=�20�V,�VDS�=�0�V

Drain-source on-state resistance RDS(on) --0.0480.063

0.064- Ω

VGS�=�18�V,�ID�=�20.1�A,�TJ�=�25�°CVGS�=�18�V,�ID�=�20.1�A,�TJ�=�150�°C

Gate resistance RG - 6.0 - Ω f�=�1�MHz,�open�drain

Table�5��Dynamic�characteristicsValues


Input capacitance Ciss - 1118 - pF VGS�=�0�V,�VDS�=�400�V,�f�=�250�kHzReverse capacitance Crss - 13 - pF VGS�=�0�V,�VDS�=�400�V,�f�=�250�kHzOutput capacitance2) Coss - 129 168 pF VGS�=�0�V,�VDS�=�400�V,�f�=�250�kHzOutput charge2) Qoss - 78 101 nC calculation�based�on�CossEffective output capacitance, energyrelated3) Co(er) - 146 - pF

VGS�=�0�V,VDS�=�0...400�V

Effective output capacitance, timerelated4) Co(tr) - 194 - pF

ID�=�constant,�VGS�=�0�V,��VDS�=�0...400�V

Turn-on delay time td(on) - 14.8 - ns VDD�=�400�V,�VGS�=�18�V,�ID�=�20.1�A,RG�=�1.8�Ω;�see�table�9

Rise time tr - 12.6 - ns VDD�=�400�V,�VGS�=�18�V,�ID�=�20.1�A,RG�=�1.8�Ω;�see�table�9

Turn-off delay time td(off) - 17 - ns VDD�=�400�V,�VGS�=�18�V,�ID�=�20.1�A,RG�=�1.8�Ω;�see�table�9

Fall time tf - 13 - ns VDD�=�400�V,�VGS�=�18�V,�ID�=�20.1�A,RG�=�1.8�Ω;�see�table�9

1)�Tested�after�1�ms�pulse�at�VGS�=�+20�V2)�Maximum�specification�is�defined�by�calculated�six�sigma�upper�confidence�bound3)�Co(er)�is�a�fixed�capacitance�that�gives�the�same�stored�energy�as�Coss�while�VDS�is�rising�from�0�to�400�V4)�Co(tr)�is�a�fixed�capacitance�that�gives�the�same�charging�time�as�Coss�while�VDS�is�rising�from�0�to�400�V

6



Table�6��Gate�charge�characteristicsValues


Gate to source charge Qgs - 9 - nC VDD�=�400�V,�ID�=�20.1�A,��VGS�=�0�to�18�V

Gate to drain charge Qgd - 8 - nC VDD�=�400�V,�ID�=�20.1�A,��VGS�=�0�to�18�V

Gate charge total Qg - 33 - nC VDD�=�400�V,�ID�=�20.1�A,��VGS�=�0�to�18�V

Table�7��Reverse�diode�characteristicsValues


Diode forward voltage VSD - 4.0 - V VGS�=�0�V,�IF�=�20.1�A,�TJ�=�25�°C

Reverse recovery time trr - 68 - ns VR�=�400�V,�IF�=�20.1�A,��diF/dt�=�1000�A/µs;�see�table�8

Reverse recovery charge Qrr - 125 - nC VR�=�400�V,�IF�=�20.1�A,��diF/dt�=�1000�A/µs;�see�table�8

Peak reverse recovery current Irrm - 8.4 - A VR�=�400�V,�IF�=�20.1�A,��diF/dt�=�1000�A/µs;�see�table�8

7



4��Electrical�characteristics�diagrams

Diagram�1:�Power�dissipation

TC�[°C]

Ptot�[W

]

0 25 50 75 100 125 1500

25

50

75

100

125

150

Ptot=f(TC)

Diagram�2:�Safe�operating�area

VDS�[V]

ID�[A

]

100 101 102 10310-3

10-2

10-1

100

101

102

103

1 µs

10 µs

100 µs

1 ms

10 ms

DC

ID=f(VDS);�TC=25�°C;�D=0;�parameter:�tp

Diagram�3:�Safe�operating�area

VDS�[V]

ID�[A

]

100 101 102 10310-3

10-2

10-1

100

101

102

103

1 µs

10 µs

100 µs

1 ms

10 ms

DC

ID=f(VDS);�TC=80�°C;�D=0;�parameter:�tp

Diagram�4:�Max.�transient�thermal�impedance

tp�[s]

ZthJ

C�[K

/W]

10-5 10-4 10-3 10-2 10-110-2

10-1

100

101

0.5

0.2

0.1

0.05

0.020.01

single pulse

ZthJC=f(tP);�parameter:�D=tp/T

8



Diagram�5:�Typ.�output�characteristics

VDS�[V]

ID�[A

]

0 5 10 15 200

25

50

75

100

125

150

18 V

15 V

12 V

10 V

8 V

ID=f(VDS);�Tj=25�°C;�parameter:�VGS

Diagram�6:�Typ.�output�characteristics

VDS�[V]

ID�[A

]

0 5 10 15 200

25

50

75

100

125

150

18 V

15 V

12 V

10 V

8 V

ID=f(VDS);�Tj=125�°C;�parameter:�VGS

Diagram�7:�Typ.�drain-source�on-state�resistance

ID�[A]

RDS(on

) �[Ω]

0 25 50 75 100 125 1500.040

0.080

0.120

0.160

0.200

15 V12 V10 V

18 V

RDS(on)=f(ID);�Tj=125�°C;�parameter:�VGS

Diagram�8:�Drain-source�on-state�resistance

TJ�[°C]

RDS(on

) �[no

rmalized

]

-50 -25 0 25 50 75 100 125 1500.5

1.0

1.5

2.0

RDS(on)=f(Tj);�ID=20.1�A;�VGS=18�V

9



Diagram�9:�Typ.�transfer�characteristics

VGS�[V]

ID�[A

]

0 2 4 6 8 10 12 14 16 18 200

50

100

150

200

150 °C

25 °C

ID=f(VGS);�VDS=20V;�parameter:�Tj

Diagram�10:�Typ.�gate�charge

Qgate�[nC]

VGS �[V]

0 5 10 15 20 25 30 35 400

2

4

6

8

10

12

14

16

18

20

400 V

VGS=f(Qgate);�ID=20.1�A�pulsed;�parameter:�VDD

Diagram�11:�Forward�characteristics�of�reverse�diode

VSD�[V]

IF �[A]

0.0 1.0 2.0 3.0 4.0 5.0 6.0 7.0 8.010-1

100

101

102

103

150 °C

25 °C

IF=f(VSD);�parameter:�Tj

Diagram�12:�Forward�characteristics�of�reverse�diode

VSD�[V]

IF �[A]

0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.010-1

100

101

102

103

25 °C

150 °C

IF=f(VSD);�VGS=18�V;�parameter:�Tj

10



Diagram�13:�Avalanche�energy

TJ�[°C]

EAS �[mJ]

25 50 75 100 125 1500

50

100

150

200

EAS=f(Tj);�ID=6.4�A;�VDD=50�V

Diagram�14:�Drain-source�breakdown�voltage

TJ�[°C]

VBR(DSS

) �[V]

-50 -25 0 25 50 75 100 125 150620

630

640

650

660

670

680

690

VBR(DSS)=f(Tj);�ID=0.6�mA

Diagram�15:�Typ.�capacitances

VDS�[V]

C�[p

F]

0 50 100 150 200 250 300 350 400 450 500101

102

103

104

Ciss

Coss

Crss

C=f(VDS);�VGS=0�V;�f=250�kHz

Diagram�16:�Typ.�Coss�stored�energy

VDS�[V]

Eoss�[µ

J]

0 50 100 150 200 250 300 350 400 450 5000

5

10

15

20

Eoss=f(VDS)

11



Diagram�17:�Typ.�Qoss�output�charge

VDS�[V]

Qos

s �[nC

]

0 50 100 150 200 250 300 350 400 450 5000

20

40

60

80

100

Qoss=f(VDS)

12



5��Test�Circuits

Table�8��Diode�characteristicsTest circuit for diode characteristics Diode recovery waveform

VDS

IF

Rg1

Rg 2

Rg1 = Rg 2

Table�9��Switching�times�(ss)Switching times test circuit for inductive load Switching times waveform

VDS

VGS

td(on) td(off)tr

ton

tf

toff

10%

90%

VDSVGS

Table�10��Unclamped�inductive�load�(ss)Unclamped inductive load test circuit Unclamped inductive waveform

VDS

V(BR)DS

IDVDS

VDSID

13



6��Package�Outlines

DIMENSIONS

MIN. MAX.

A2

L

b

D

c

b2

E

e1

L1

Q

øP2

D1

A

A1

2.101.90

5.08

19.80

-

20.90

0.58

0.65

15.70

5.60

2.40

16.25

20.10

0.79

0.66

0.20

21.10

6.00

2.60

4.30

15.90

16.85

MILLIMETERS

4.90

2.31

5.10

2.51

b1

1.10 1.30

b3

SCALE

Z8B00184785

REVISION

ISSUE DATE

EUROPEAN PROJECTION

03

21.08.2017

0 5

DOCUMENT NO.

2:1

A3 0.250.05

D2 1.05 1.35

D3 24.97 25.27

10mm

E1 13.10 13.50

E2 2.40 2.60

-

øP1 7.00 7.40

øP 3.50 3.70

S 6.15

T 9.80 10.20

U 6.00 6.40

1.34 1.44

e2 2.79

e3 2.54

D4 4.90 5.10

Figure�1��Outline�PG-TO�247-4-3,�dimensions�in�mm

14



7��Appendix�A

Table�11��Related�Links

• IFX�CoolSiC�M1�Webpage:�www.infineon.com

• IFX�CoolSiC�M1�application�note:�www.infineon.com

• IFX�CoolSiC�M1�simulation�model:�www.infineon.com

• IFX�Design�tools:�www.infineon.com

http://www.infineon.com/toolshttp://www.infineon.com/SiChttp://www.infineon.com/SiChttp://www.infineon.com/SiC

15



Revision�HistoryIMZA65R048M1H

Revision:�2019-12-16,�Rev.�2.0

Previous Revision

Revision Date Subjects (major changes since last revision)

2.0 2019-12-16 Release of final version

TrademarksAll�referenced�product�or�service�names�and�trademarks�are�the�property�of�their�respective�owners.

We�Listen�to�Your�CommentsAny�information�within�this�document�that�you�feel�is�wrong,�unclear�or�missing�at�all?�Your�feedback�will�help�us�to�continuouslyimprove�the�quality�of�this�document.�Please�send�your�proposal�(including�a�reference�to�this�document)�to:[email protected]

Published�byInfineon�Technologies�AG81726�München,�Germany©�2019�Infineon�Technologies�AGAll�Rights�Reserved.

Legal�DisclaimerThe�information�given�in�this�document�shall�in�no�event�be�regarded�as�a�guarantee�of�conditions�or�characteristics�(“Beschaffenheitsgarantie”)�.

With�respect�to�any�examples,�hints�or�any�typical�values�stated�herein�and/or�any�information�regarding�the�application�of�theproduct,�Infineon�Technologies�hereby�disclaims�any�and�all�warranties�and�liabilities�of�any�kind,�including�without�limitationwarranties�of�non-infringement�of�intellectual�property�rights�of�any�third�party.In�addition,�any�information�given�in�this�document�is�subject�to�customer’s�compliance�with�its�obligations�stated�in�thisdocument�and�any�applicable�legal�requirements,�norms�and�standards�concerning�customer’s�products�and�any�use�of�theproduct�of�Infineon�Technologies�in�customer’s�applications.The�data�contained�in�this�document�is�exclusively�intended�for�technically�trained�staff.�It�is�the�responsibility�of�customer’stechnical�departments�to�evaluate�the�suitability�of�the�product�for�the�intended�application�and�the�completeness�of�the�productinformation�given�in�this�document�with�respect�to�such�application.

InformationFor�further�information�on�technology,�delivery�terms�and�conditions�and�prices�please�contact�your�nearest�InfineonTechnologies�Office�(www.infineon.com).

WarningsDue�to�technical�requirements,�components�may�contain�dangerous�substances.�For�information�on�the�types�in�question,please�contact�the�nearest�Infineon�Technologies�Office.The�Infineon�Technologies�component�described�in�this�Data�Sheet�may�be�used�in�life-support�devices�or�systems�and/orautomotive,�aviation�and�aerospace�applications�or�systems�only�with�the�express�written�approval�of�Infineon�Technologies,�if�afailure�of�such�components�can�reasonably�be�expected�to�cause�the�failure�of�that�life-support,�automotive,�aviation�andaerospace�device�or�system�or�to�affect�the�safety�or�effectiveness�of�that�device�or�system.�Life�support�devices�or�systems�areintended�to�be�implanted�in�the�human�body�or�to�support�and/or�maintain�and�sustain�and/or�protect�human�life.�If�they�fail,�it�isreasonable�to�assume�that�the�health�of�the�user�or�other�persons�may�be�endangered.

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DescriptionTable of ContentsMaximum ratingsThermal characteristicsElectrical characteristicsStatic characteristicsDynamic characteristicsGate charge characteristicsReverse diode characteristicsElectrical characteristics diagramsElectrical characteristics diagramsElectrical characteristics diagramsElectrical characteristics diagramsElectrical characteristics diagramsTest CircuitsPackage OutlinesAppendix ARevision HistoryTrademarksDisclaimer

MOSFET · 2020. 7. 13. · 1 IMZA65R048M1H Final Data Sheet Rev. 2.0, 2019-12-16 1 2 3 Tab 4 PG-TO...

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