Modulo IGBT SEMIKRON SKM 50GB123D
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Transcript of Modulo IGBT SEMIKRON SKM 50GB123D
SEMITRANS® 2
IGBT Modules
SKM 50GB123D
SKM 50GAL123D
Features
Typical Applications*
GB GAL
Absolute Maximum RatingsSymbol Conditions Values UnitsIGBT
Inverse Diode
Freewheeling Diode
Module
CharacteristicsSymbol Conditions min. typ. max. UnitsIGBT
SKM 50GB123D ...
1 23-11-2006 RAA © by SEMIKRON
SEMITRANS® 2
IGBT Modules
SKM 50GB123D
SKM 50GAL123D
Features
Typical Applications*
GB GAL
CharacteristicsSymbol Conditions min. typ. max. UnitsInverse Diode
Freewheeling Diode
Module
This is an electrostatic discharge sensitive device (ESDS), international standardIEC 60747-1, Chapter IX.
* The specifications of our components may not be considered as an assurance ofcomponent characteristics. Components have to be tested for the respectiveapplication. Adjustments may be necessary. The use of SEMIKRON products inlife support appliances and systems is subject to prior specification and writtenapproval by SEMIKRON. We therefore strongly recommend prior consultation ofour personal.
SKM 50GB123D ...
2 23-11-2006 RAA © by SEMIKRON
Fig. 1 Typ. output characteristic, inclusive RCC'+ EE'
Fig. 2 Rated current vs. temperature IC
= f (TC)
Fig. 3 Typ. turn-on /-off energy = f (IC) Fig. 4 Typ. turn-on /-off energy = f (R
G)
Fig. 5 Typ. transfer characteristic Fig. 6 Typ. gate charge characteristic
SKM 50GB123D ...
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Fig. 7 Typ. switching times vs. IC
Fig. 8 Typ. switching times vs. gate resistor RG
Fig. 9 Transient thermal impedance Fig. 10 CAL diode forward characteristic
Fig. 11 Typ. CAL diode peak reverse recovery current Fig. 12 Typ. CAL diode recovered charge
SKM 50GB123D ...
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UL recognized File no. E 63 532
SKM 50GB123D ...
5 23-11-2006 RAA © by SEMIKRON