MJE16204 NPN datasheet
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SCANSWITCHNPN Bipolar Power Deflection TransistorFor High and Very High Resolution
Monitors
The MJE16204 is a stateoftheart SWITCHMODE bipolar
power transistor. It is specifically designed for use in horizontal
deflection circuits for 20 mm diameter neck, high and very resolution,
full page, monochrome monitors.
550 Volt CollectorBase Breakdown Capability
Typical Dynamic Desaturation Specified (New TurnOff Characteristic)
Application Specific StateoftheArt Die Design
Isolated or NonIsolated TO220 Type Packages
Fast Switching:65 ns Inductive Fall Time (Typ)
680 ns Inductive Storage Time (Typ)
Low Saturation Voltage:
0.4 Volts at 3.0 Amps Collector Current and 400 mA Base Drive
Low CollectorEmitter Leakage Current
100 A Max at 550 Volts VCES
High EmitterBase Breakdown Capability For High Voltage Off Drive
Circuits 9.0 Volts (Min)
Case 221D is UL Recognized at 3500 VRMS: File #E69369
Preferred devices are ON Semiconductor recommended choices for future use and best overall value.
ON Semiconductort
Semiconductor Components Industries, LLC, 2001
April, 2001 Rev. 21 Publication Order Number:
MJE16204D
MJE16204
POWER TRANSISTORS
6.0 AMPERES
550 VOLTS VCES45 AND 80 WATTS
CASE 221A09TO220ABMJE16204
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MAXIMUM RATINGS
Rating
Symbol
MJE16204
Unit
CollectorEmitter Breakdown Voltage
VCES
550
Vdc
CollectorEmitter Sustaining Voltage
VCEO(sus)
250
Vdc
EmitterBase Voltage
VEBO
8.0
Vdc
RMS Isolation Voltage(2) Per Fig. 14
(for 1 sec, TA = 25_C, Per Fig. 15
Rel. Humidity < 30%) Per Fig. 16
VISOL
V
Collector Current Continuous
Pulsed (1)
ICICM
6.0
8.0
Adc
Base Current Continuous
Pulsed (1)
IBIBM
2.0
4.0
Adc
Repetitive EmitterBase Avalanche Energy
W(BER)
0.2
mJ
Total Power Dissipation @ TC = 25_C
Total Power Dissipation @ TC = 100_C
Derated above TC = 25_C
PD
80
32
0.64
Watts
W/_C
Operating and Storage Temperature Range
TJ, Tstg
55 to 150
_C
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Thermal Resistance Junction to Case
RJC
1.56
_C/W
Lead Temperature for Soldering Purposes
1/8 from the case for 5 seconds
TL
260
_C
(1) Pulse Test: Pulse Width = 5.0 ms, Duty Cyclev 10%.
(2) Proper strike and creepage distance must be provided.
*Measurement made with thermocouple contacting the bottom insulated mounting surface of the
package (in a location beneath the die), the device mounted on a heatsink thermal grease applied,
and a mounting torque of 6 to 8 inSlbs.
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ELECTRICAL CHARACTERISTICS (TC= 25_C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS (3)
Collector Cutoff Current
(VCE = 550 Vdc, VBE = 0 V)
ICES
100
Adc
EmitterBase Leakage
(VEB = 8.0 Vdc, IC = 0)
IEBO
10
Adc
EmitterBase Breakdown Voltage
(IE = 1.0 mA, IC = 0)
V(BR)EBO
8.0
11
Vdc
CollectorEmitter Sustaining Voltage (Table 1)
(IC = 10 mAdc, IB = 0)
VCEO(sus)
250
325
Vdc
ON CHARACTERISTICS (3)
CollectorEmitter Saturation Voltage
(IC = 1.0 Adc, IB = 133 mAdc)
(IC = 3.0 Adc, IB = 400 mAdc)
VCE(sat)
0.25
0.4
0.6
1.0
Vdc
BaseEmitter Saturation Voltage
(IC = 3.0 Adc, IB = 400 mAdc)
VBE(sat)
0.9
1.5
Vdc
DC Current Gain
(ICE = 6.0 Adc, VCE = 5.0 Vdc)
hFE
8.0
14
20
DYNAMIC CHARACTERISTICS
Dynamic Desaturation Interval (IC = 3.0 A, IB1 = 400 mA)
tds
50
ns
Output Capacitance
(VCE = 10 Vdc, IE = 0, ftest = 100 kHz)
Cob
90
150
pF
Gain Bandwidth Product
(VCE = 10 Vdc, IC = 1.0 A, ftest = 1.0 MHz)
fT
10
MHz
EmitterBase TurnOff Energy
(EB(avalanche) = 500 ns, RBE = 22 )
EB(off)
6.6
J
CollectorHeatsink Capacitance
(Mounted on a 1x 2x 1/16Copper Heatsink, VCE = 0, ftest = 100
kHz)
Cchs
3.0
pF
SWITCHING CHARACTERISTICS
Inductive Load (Table 2) (IC = 3.0 A, IB = 400 mA)
Storage
Fall Time
tsvtfi
680
65
1500
150
ns
(3) Pulse Test: Pulse Width = 300 s, Duty Cyclev 2.0%.
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VCE,
COLLECTO
R-
EMITTERVOLTAGE(VOLTS)
Figure 1. Typical DC Current Gain
IC, COLLECTOR CURRENT (AMPS)
0.5 2 10
20
hFE,
DCCURRENTGAIN
1 53
30
7
0.7
TJ = 100C
25C
-55C
7
10
5
3
50
VCE = 5 V
IC, COLLECTOR CURRENT (AMPS)
Figure 2. Typical CollectorEmitter
Saturation Voltage
0.5
3
0.2
5
10
1
0.1
7
0.3
2
0.7
0.5 32 50.7 10.1 0.2
TJ = 25C
TJ = 100C
IC/IB1 = 10
0.3 7
60
5
7.5
0.2
C,C
APACITANCE(pF)
VBE,
BASE-
EMITTERVOLTAGE(VO
LTS)
VCE,
COLLECTOR-
EMITTERVOLTAGE
(VOLTS)
Figure 3. Typical CollectorEmitterSaturation Region
IB, BASE CURRENT (AMPS)
0.7
0.1
0.03 0.3
0.3
6 A
0.05 1 2
2 A 3 AIC = 1 A
0.030.07 0.1 0.70.2 0.5
30
5
10
Figure 4. Typical BaseEmitterSaturation Voltage
0.3 300.5
5
0.7
0.10.7 201 10
10
2
TJ = 25C
2 3 5 7
IC, COLLECTOR CURRENT (AMPS)
TJ = 25C
TJ = 100C
0.3
Figure 5. Typical Capacitance
10K
VR, REVERSE VOLTAGE (VOLTS)
Cib
0.1
1K
100
101 10 100 1K
2K
200
20
3K
300
5K
500
50
0.3 2 30 300200.5 5 50 500
fT,
TRANS
ITIONFREQUENCY(MHz)
IC, COLLECTOR CURRENT (AMPS)
Figure 6. Typical Transition Frequency
VCE = 10 V
ftest = 1 MHz
TC = 25C
0 0.5 1 1.5 2 32.5
20
8
2
14
0
6
16
12
0.5
0.07
0.2
0.05
20
3
7
2
1
3
IC/IB1 = 5 to 107
1
3
0.5
30
0.2 3 200
TC = 25C
10
4
18
Cob
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IC,
COLLECTORC
URRENT(AMPS)
VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS)
Figure 7. Maximum Forward Biased
Safe Operating Area
7
3
10
1
0.02
70
SECONDARY BREAK
DOWN
WIREBOND LIMIT
THERMAL LIMITIC,
COLLECTORC
URRENT(AMPS)
0.1
7 20 250
3
0.30.2
d
c
TC = 25C
1ms
10 s
2
5
0.5
50
7
0150 550
IC/IB1 5
TJ
100C
VBE(off) = 5 V
50
VCE(pk), PEAK COLLECTOR-EMITTER VOLTAGE (VOLTS)
350
VBE(off) = 0 V
Figure 8. Maximum Reverse Biased
Safe Operating Area
3
5
2
1
250 450
0.03
0.070.05
0.01
0.7
1005 10 20030
MJE16204 6
4
SAFE OPERATING AREA
SAFE OPERATING AREA INFORMATION
FORWARD BIAS
There are two limitations on the power handling ability of
a transistor: average junction temperature and second
breakdown. Safe operating area curves indicate IC VCElimits of the transistor that must be observed for reliable
operation; i.e., the transistor must not be subjected to greater
dissipation than the curves indicate.
The data of Figure 7 is based on TC = 25_C; TJ(pk) is
variable depending on power level. Second breakdown
pulse limits are valid for duty cycles to 10% but must bederated when TC 25_C. Second breakdown limitations do
not derate the same as thermal limitations. Allowable
current at the voltages shown on Figure 7 may be found at
any case temperature by using the appropriate curve on
Figure 9.
At high case temperatures, thermal limitations will reduce
the power that can be handled to values less than the
limitations imposed by second breakdown.
REVERSE BIAS
For inductive loads, high voltage and high current must be
sustained simultaneously during turnoff, in most cases,with the basetoemitter junction reverse biased. Under
these conditions the collector voltage must be held to a safe
level at or below a specific value of collector current. This
can be accomplished by several means such as active
clamping, RCsnubbing, load line shaping, etc.
TC, CASE TEMPERATURE (C)
040 120 160
0.6
POWERDERATINGFACTOR
SECOND BREAK
DOWN DERATING
1
0.8
0.4
0.2
60 100 14080
THERMAL
DERATING
2
0
Figure 9. Power Derating
The safe level for these devices is specified as Reverse
Biased Safe Operating Area and represents the
voltagecurrent condition allowable during reverse biased
turnoff. This rating is verified under clamped conditions so
that the device is never subjected to an avalanche mode.
Figure 8 gives the RBSOA characteristics.
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H.P. 214
OR EQUIV.
P.G.
0
-35 V
5
0
50
0 10
0 -V
2N533
71 F
+ -
+
-
0.02 F
20
10
0
+V 11 V
2N619
1
A
RB1
RB2
10 F
0.02 F
T1 +V
0 V
-V
A
50
*IB
*IC
T.U.T
.
L
MR856
Vclamp VCC
IC
VCE
IB
IB1
IB2
IC(pk)
VCE(pk)
T1 [Lcoil (ICpk)
VCC
T1 adjusted to obtain IC(pk)
V(BR)CEOL = 10 mH
RB2 =
VCC = 20 Volts
RBSOA
L = 200 H
RB2 = 0
VCC = 20 Volts
RB1 selected for desired IB1
Note: Adjust V to obtain desired VBE(off) at Point A.
*Tektronix
*P6042 or
*Equivalent
Table 1. RBSOA/V(BR)CEO(sus) Test Circuit
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+24 V
C1100 F
+
U2
MC7812
VI VOG
N
D
C2
10 F
+ Q2MJ11016
(IB
)
R1
1 k
6.2
V
100 V
C3
10 F
+R7
2.7
k
R8
9.1
k
R9
470 R10
47
C5
0.1
C4
0.005
(DC)
R2
R510
R3
250
SYN
CQ
1
BS17
0
R6
1 k 2
18
7 6
G
N
D
O
S
C
VCC
% OU
T
R10
4701 W
Q3
MJE
15031
R12
470
1 W
D1
MUR11
0
T
1
R4
22
L
B
D2
MUR460
CY
VCE
Q4
DUT
LY
C6
100 F
R51 k
(IC) Q5
MJ11016
+
T1: Ferroxcube Pot Core #1811 P3C8
Primary/Sec. Turns Ratio = 18:6
Primary Inductance Gap:
LP = 250 H
LB = 0.5 H
CY = 0.01 F
LY = 13 H
U1
MC1391P
Table 2. High Resolution Deflection Application Simulator
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IC, COLLECTOR CURRENT (AMPS)
Figure 10. Typical Collector Current Storage
Time in Deflection Circuit Simulator
ts,
STORAGETIME(ns)
2K
700
200
300
ICI/B1 = 7.5
500
1K
1 2 753
10
IC, COLLECTOR CURRENT (AMPS)
Figure 11. Typical Collector Current Fall Time
in Deflection Circuit Simulator
tf,FALLTIME(ns) 100
20
50
200
2 3 5 71 10
30
70
TC = 25C
ICI/B1 = 7.5
10
TC = 25C
Figure 12. Deflection Simulator Switching
Waveforms From Circuit in Table 2
IC
0% IB
VCE
tsv
VCE = 20 V
tfi
10% IC(pk)
Figure 13. Definition of Dynamic
Saturation Measurement
TIME (ns)
VCE
DYNAMIC SATURATION TIME
IS MEASURED FROM VCE = 1 V
TO VCE = 5 V
tds
1
4
COLLECTOR-
EMITTERVOLTAGE(VOLTS)
5
0
3
2
0
0
90% IC(pk)
DYNAMIC DESATURATIION
The SCANSWITCH series of bipolar power transistors
are specifically designed to meet the unique requirements of
horizontal deflection circuits in computer monitor
applications. Historically, deflection transistor design was
focused on minimizing collector current fall time. While fall
time is a valid figure of merit, a more important indicator of
circuit performance as scan rates are increased is a newcharacteristic, dynamic desaturation. In order to assure a
linear collector current ramp, the output transistor must
remain in hard saturation during storage time and exhibit a
rapid turnoff transition. A sluggish transition results in
serious consequences. As the saturation voltage of the
output transistor increases, the voltage across the yoke
drops. Roll off in the collector current ramp results in
improper beam deflection and distortion of the image at the
right edge of the screen. Design changes have been made in
the structure of the SCANSWITCH series of devices which
minimize the dynamic desaturation interval. Dynamic
desaturation has been defined in terms of the time required
for the VCE to rise from 1.0 to 5.0 volts (Figures 12 and 13)
and typical performance at optimized drive conditions hasbeen specified. Optimization of device structure results in a
linear collector current ramp, excellent turnoff switching
performance, and significantly lower overall power
dissipation.
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t, TIME (ms)
0.010.01 0.05 1 2 5 10 20 50 5000.1 0.50.2
1
0.2
0.1
0.05r(t),T
RANSIENTTHERMAL
RJC(t) = r(t) RJCRJC = 1.56C/W MAX
D CURVES APPLY FOR POWERPULSE TRAIN SHOWN
READ TIME AT t1TJ(pk) - TC = P(pk)RJC(t)
P(pk)
t1t2
DUTY CYCLE, D = t1/t2SINGLE PULSE
RESISTANCE(NORMALIZED)
Figure 14. Typical Thermal Response for MJE16204
0.5D = 0.5
0.7
0.07
0.02
0.02 100 200 10 k
0.2
0.05
0.1
0.02
0.01
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PACKAGE DIMENSIONS
CASE 221A09ISSUE AA
TO220AB
NOTES:1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.2. CONTROLLING DIMENSION: INCH.3. DIMENSION Z DEFINES A ZONE WHERE ALL
BODY AND LEAD IRREGULARITIES ARE
ALLOWED.
DIM MIN MAX MIN MAX
MILLIMETERSINCHES
A 0.570 0.620 14.48 15.75
B 0.380 0.405 9.66 10.28
C 0.160 0.190 4.07 4.82
D 0.025 0.035 0.64 0.88
F 0.142 0.147 3.61 3.73
G 0.095 0.105 2.42 2.66
H 0.110 0.155 2.80 3.93
J 0.018 0.025 0.46 0.64
K 0.500 0.562 12.70 14.27
L 0.045 0.060 1.15 1.52
N 0.190 0.210 4.83 5.33
Q 0.100 0.120 2.54 3.04
R 0.080 0.110 2.04 2.79
S 0.045 0.055 1.15 1.39
T 0.235 0.255 5.97 6.47
U 0.000 0.050 0.00 1.27
V 0.045 --- 1.15 ---
Z --- 0.080 --- 2.04
B
Q
H
Z
L
V
G
N
A
K
F
1 2 3
4
D
SEATINGPLANET
C
ST
U
R
J
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Notes
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without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particularpurpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability,including without limitation special, consequential or incidental damages. Typical parameters which may be provided in SCILLC data sheets and/orspecifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including Typicals must bevalidated for each customer application by customers technical experts. SCILLC does not convey any license under its patent rights nor the rights of others.SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applicationsintended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury ordeath may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and holdSCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonableattorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claimalleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer.
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MJE16204D
SCANSWITCH is a trademark of Semiconductor Components Industries, LLC.
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