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© CEA. All rights reserved MEMS R&D at Leti André ROUZAUD, Deputy Head of Department Jean-Philippe POLIZZI, Microsystems Program manager iNEMI Research seminar Series

Transcript of MEMS R&D at Leti - INEMIthor.inemi.org/webdownload/2014/MEMS_Leti_033114.pdf · M&NEMS: 3-axis...

© CEA. All rights reserved

MEMS R&D at Leti

André ROUZAUD, Deputy Head of Department

Jean-Philippe POLIZZI, Microsystems Program manager

iNEMI Research seminar Series

© CEA. All rights reserved

Summary

Short overview of Léti

The context of MEMS

The next steps in MEMS: Generic platforms

Physical sensors

Chemical sensors

Conclusion

MEMS webinar | 2

© CEA. All rights reserved

Leti key figures

CEA Institute founded in 1967

Director : Dr Laurent Malier

1700 collaborators1 150 permanent staff200 PhD and post-doc, 40 nationalities

2200 patents286 registered in 201240 % under licensing

Budget : 250 M€CapEx : 40M€75% from external revenue

8 000m² clean roomsFor 200 and 300mm wafer fab, operated 24/7

MEMS webinar | 3

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A Business Model …Create and transfer innovation to our industrial partners

Basic

research

Technological Research

Pilot line

Mass

production

MEMS webinar | 4

© CEA. All rights reserved

Léti platforms

CMOS/MEMS 200mm

Nanotech 300mm

Bio and Chemistry

Photonics

Design Nano characterization

MEMS webinar | 5

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These 2 state-of-the-art technological platforms are at the heart of the development

of new applications of micro and nanotechnologies, where Léti teams ensure the

realisation of research projects until prototyping.

Characteristics

• 6500 m² of clean rooms

• 500 treatment equipment

• 1 team of more than 450 people 24/7

Objectives

• 200 et 300 mm wafer processing which can be

applied on semiconductors devices as well as on

microsystems.

• Development of generations CMOS sub 20nm

nodes (300mm platform)

• Validation of new architectures and technologies

development of microsystems and nanosystems

(200mm platform)

MOS & MEMS platforms

CMOS/3D 300mm

CMOS/MEMS 200mm

MEMS webinar | 6

© CEA. All rights reserved

Summary

Short overview of Léti

The context of MEMS

The next steps in MEMS: Generic platforms

Physical sensors

Chemical sensors

Conclusion

MEMS webinar | 7

© CEA. All rights reservedMEMS webinar 8

MEMS: a fast Growing market 80s: military/space market

90s: some consumer markets (DLP, automotive: Airbag, TPMS,…)

Now: So many devices, everywhere

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MEMS Activity : organization

Overall the MEMS design/fabrication/characterization employs about 150 persons

in Leti (not including activities in the electronic design)

Charact. & reliability (17 people)

Packaging for MEMS

(15 people)

RF MEMS

(25 people)

MEMS Actuators(15 people)

MEMS Sensors

(30 people)

TECHNOLOGICAL PLATFORM

• MEMS 8”(1000m²) + FE 8”(3000m²) Cleanrooms

- Specific MEMS equip. : DRIE, HF-vapor, bonder,…

- IC equip. for MEMS : e-beam, DUV, CMP …

• 5 shifts working : ~7days/week – 24h/days

MEMS webinar | 9

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Thin Film Technology

Bulk Technology

Surface Technology

Nano-scale Technology(DUV litho on thin SOI)

30 years background

80 90 00

year

10 20

Tran

sfe

rsK

ey d

ate

s

1984 - Comb drive accelero patent

19

81

Hygrometer

Quartz accelerometer

19

87

Weight sensor

19

80

Pacemaker accelerometer

Geophone

19

96

Miniature pressure sensor

19

96

Accelerometer

20

05

1996 – Startup creation 2011– Startup

creation

Leti /Caltech Alliance - 2007

2010 - Common lab.

M&NEMS platform

20

12

Far-IR µbolometer

20

09

High perf. pressure sensor

19

98

Inertial platform

20

11

MEMS webinar | 10

© CEA. All rights reserved

Summary

Short overview of Léti

The context of MEMS

The next steps in MEMS: Generic platforms

Physical sensors

Chemical sensors

Conclusion

MEMS webinar | 11

© CEA. All rights reserved

NEMS standardization Platforms

Leti has implemented two major platforms :• M&NEMS: for physical sensors

• NEMS: for chemical and bio-chemical sensors

Technology foundation allows to :

Reduce: developments, cycle time, risks

Capitalise on: modeling, technology progress, characterization, reliability, electronics

Industrial interests :

Process Standardization foundry interest

Sharing Process (“mutualizing ”) End-users interest

Source of Innovation : New detection concept + technology constraints differentiation and IP

© CEA. All rights reserved

Why going from MEMS to NEMS ?

1 µm

Typical sizes : ~10 nm – 100 nm (X, Y, Z)

Used material : silicon structured by microelectronic tools

MEMS accelerometer

500 µm

80 nm

10 µm

Source LETI – MIMOSA project

Large volume markets

(Automotive/Consumer)

Strong pressure

on prices

Smaller devices

Consumer marketsMore integration The multi axis sensor

•3 axis accelerometer

•3axis gyrometer

•3axis magnetometer

•1 P sensorMobile phones, gaming, tablets, e-books, digital

cameras, camcorders, HDD protection, laptop,

Personal media Players,set-up boxes, GPS, sport

equipments…

MEMS webinar | 13

© CEA. All rights reserved

Miniaturization issuesP

erfo

rm

an

ce

s

MEMS Size

Ma

cro

scop

ic

se

nso

rM

acro

scop

ic

gM 2= g1000

M7

10.5

M7

.50000

M

Few cm² Few mm² 1 mm² 0,1 mm²

Electromagnet

ic detection

New design

Bu

lk te

ch

no

log

y

Piezo or

electrostatic out of

plane detection

Surf

ace technolo

gy

New design

Electrostatic in

plane detection

New design

?

?

Nano-Wire detection ?

M&

NE

MS

Performances

MEMS webinar | 14

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Optimization of the ratio performance/die area. Area gain x3-5 for same perfs

Mix on a same device two different thicknesses A thick layer for the proof mass (MEMS)

A thin layer for the gauge (“NEMS part”, compatible with DUV

litho).

Highly efficient transduction: stress concentration (design lever +

size effect)

M&NEMS principle

MEMS webinar | 15

© CEA. All rights reservedMEMS webinar 16

Piezoresistive gage

Rotation axis

Seismic mass

Principle

VSg

V0

R

V0

R

g

F = M.g

F

© CEA. All rights reservedMEMS webinar 17

Piezoresistive gage

Rotation axis

Seismic mass

Principle

VSg

V0

R

s

S = 50 mV/V full scale

(smax= 100MPa)

s=

R

RR

V0

R

s R- R

-s R+R

g

F = M.g

F

© CEA. All rights reservedMEMS webinar 18

Stress magnification induced by design lever effect

m.g

In-plane measurement

Stress magnification induced by the Nano-gauge

Total Magnification : x3000

Top view

Cross section

view

© CEA. All rights reservedMEMS webinar 19

2 different thicknesses

Out-of-plane detection

Rotation axis

m.g

Out of plane measurementAnchor

g

Seismic mass

gauge

Stress magnification induced by design lever effect & nano-gauge

Total Magnification : x1000

© CEA. All rights reservedMEMS webinar 20

M&NEMS Process flow

NEMS gauge and bulk» etching

Oxide deposition

SiO2 etching (gauge

protection + bulk contact)

In-situ doped epitaxial

Si deposition

a)

b)

c)

© CEA. All rights reservedMEMS webinar 21

M&NEMS Process flow

Release (HF liquid + vapor)

Metal deposition

Etching of the contact pads

DRIE of the MEMS device

mass

e)

f)

g) Gauge

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250nm

250nm

M&NEMS accelerometer demonstrator

15µm

• Proof of concept design and fabrication of

accelerometer have been achieved

• Typical dimensions of the sensitive element

≈ 0.1mm² / axis

MEMS webinar | 22

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3-axis M&NEMS accelerometer

R/R

10-3

+1g

-1g

Focus on the nano-gauge of the Z-axis accelerometer

Focus on the nano-gauge of the X-axis accelerometer

+1g / -1g characterization(accelerometer range > 30g)

3-axis accelerometer

Measured sensitivity:

SdR/R=1.75e-3 / g

S = 3.5 10-4 V/g (no amplification)

MEMS webinar | 23

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3-axis accelerometer : Bandwidth

In plane accelerometer

Fr= 2700

Q ≈ 3 at atmospheric pressure

• Out of plane accelerometer– F0 ≈ 27kHz

– Q ≈ 730 in vacuum

– Over damping condition at atmospheric pressure.

Under

vacuum

At atmospheric pressure

MEMS webinar | 24

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3-axis accelerometer: Offset stability

Peak to peak stability variation < 75ppm

Re

lative c

han

ge

(

R/R

) –

[µW

/W]

Offset stability of a 10 G accelerometer over the 11 days < 25mG

Differential gauges

output

11 days @ 20°C (68°F)

Value over-estimated including non optimized packaging (non hermetic) and assembly (glue) effects

MEMS webinar | 25

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Offset Thermal Coefficient (TCO)

7 days trial with sequences of 10h at 20°C, 45°C and 70°C (68°F, 113°F, 158°F)

Temperature

cycle

Value over-estimated including the effect of the stress induced by the packaging (glue)

Mechanical drift (detected on both gauges)

-

Stress relaxation of the packaging

TCO < 7 ppm/°C

Offset variation of a 10 G accelero < 2mG/°C

Differential

output

MEMS webinar | 26

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Nano-gauge stress characterization

A force is applied to a suitably designed specimen (250 nm thick) with a notch root through a set of comb fingers

Displacement monitored through capacitive electrodes

Stress assessed through FEM simulation

Actuation with a quasi-stationary ramp up to the failure

scritical= 8.7 GPa for SC 250nm layer (Value used in design = 1GPa, safety factor is x10 with respect to this latter value)

MEMS webinar | 27

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Samples are stressed through sine waves at a known percentage of the nominal tensile strength up to the failure and different LR ratios (LR = scompressive / stensile )

Wöhler curve : gives the number of cycles to the failure versus the stress level

Wöhler curveFitting : S = 100.N-a

Nano-gauge fatigue characterization

• For s < 1.1GPa, M&NEMS can survive to > 1013 cycles (i.e 15 years cycling @ 20kHz)

• 1.1GPa = 10 times the full range stress of M&NEMS sensor (100MPa)

1013 cycles = number of cycles required for medical application (15 years, all-the-day, all-the-year operation at 20 kHz)

Failure of MEMS devices, loaded with a

s=2.5GPa after 1 billion cycles

Failure of NEMS devices, loaded with a

s=4.3GPa after 1 billion cycles

MEMS webinar | 28

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Dual-mass gyroscopes (tuning fork)

Unmatched frequencies (fexc<fdet ) Open-loop system No detection feedback or control of resonance frequency (trimming)

M&NEMS: 3-axis gyroscope

Z gyro X/Y gyro

Typical dimensions of sensitive element: < 0.5mm² / axis

3D sensor on chip

1 sensitive element / axis (avoid cross sensitivity)

Differential measurement (drift limitation)

Open-loop detection (no need matched frequencies - process

control is relaxed)

Rough vacuum required (no need for getter)

MEMS webinar | 29

© CEA. All rights reservedMEMS webinar 30

M&NEMS gyrometer: resonanceZ gyrometer characterization

• Measurement setup

– Tests realized under vacuum

– 2ω measurement with lock-in amplifier

• Excitation mode

– Anti phase mode : Fexc = 20.3 kHz

(for 20.1kHz predicted with simulation)

– Phase mode : 22.6kHz(for 22.7 kHz predicted with simulation)

– Q-factor > 100.000

• Detection mode

– Fdet = 21.4 kHz

(for 22kHz predicted with simulation)

– Q-factor > 50.000

– Piezoresistive detection validation

© CEA. All rights reservedMEMS webinar 31

M&NEMS gyrometer: sample realisation

© CEA. All rights reservedMEMS webinar 32

3-axis Gyroscope

• Gyroscope measurement

– Noise: 0.02°/s/√Hz (limited by electronics)

– Quadratic bias of few 100°/s

W = 50°/s

time drift

Measurement calibration

Allan deviation

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3-axis Compass

• Integration of permanent

magnet Low power

consumption compare to

Lorentz force approach

• Magnetic material = Coupled ferro /

antiferro magnetic multilayer

Typical dimensions of sensitive element : <0.3 mm² / axis

Low consumption

Differential measurement

3D sensor

Bext

s

V0

VS

RR- R

MEMS webinar | 33

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B

B

B

Concept of using an (F/AF) multilayer +

shape-magnetic anisotropy for auto

alignment during anneal

Collective and simple process

3D magnetometer : F/AF multi-layer

M

M

M

MEMS webinar | 34

© CEA. All rights reserved

3D magnetometer : F/AF multi-layer

Y

X

Z

500µm

3-axis magnetometer

Torsion springs

MEMS webinar | 35

© CEA. All rights reservedMEMS webinar 36

Magnetometer benchmark

ResolutionLinearity

rangeSize

Integrated

3-axes

Hall Effect

(AK8975b, AKM 3 axis)

0.3µT @ 8Hz

(106 nT/√Hz)1.2 mT 4x4mm² (packaged) YES

AMR

(HMC1043 : Honeywell

assembled 3D)

12nT@ 50Hz

(1.7 nT/√Hz)0.6 mT 3x3mm² (packaged) NO

GMR

(NVE)

1-10 mT

(non linear at low fields,

typically <100nT)

>1mm²/axis (packaged)

NO

M&NEMS 20-80 nT/√Hz 4.5 mT0.25 mm²/axis

(MEMS component)YES

• Magnetometer sensitivity • Correlation between X and Y sensitivity on

the same chip : 99.8%

First demonstration of the co-integration of 3-axes magnetometer with 3-axis

accelerometer

© CEA. All rights reservedMEMS webinar 37

M&NEMS Pressure Sensor

M&NEMS Concept : use of lever arm and nano-gauges detection

State of the art : piezoresitive pressure sensor

Die size : 1 mm² Resolution: ≈ 2Pa Specific process: VENSENS (ST), APSM (Bosch),…

not compatible with inertial sensor

Die size < 0,4 mm²

Resolution: 1Pa

Standard M&NEMS process

Robustness (mechanical stops)

Expected characteristics

Nano-gauge

Membrane

a

Lever arm

Stop

s

F

P

© CEA. All rights reserved

Pressure Sensor

Main Interests Separate optimization between the membrane et the detection means

High linearity (low membrane deflection / high gauge linearity)

High efficiency due to the lever effect (performances / miniaturization)

Large volume vacuum (high reference pressure stability)

Over-pressure protection (stops)

Non sensitive to parasitic capacitance

M&NEMS platform Co-integration with inertial sensors

Compatible with high temperature application (suspended gauge)

Compatible with piezoresistive or resonant detection

a

s

F

P

MEMS webinar | 38

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M&NEMS Pressure sensor

First design for consumer application

Range : 1 bar

Resolution : 1 Pa

Die size : 0,25 mm²

Mechanical footprint : 0,02mm²

Lithography steps : 10

MEMS webinar | 39

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Perspective : M&NEMS Microphone

M&NEMS Concept : Principle of planar microphone with nano-gauges

detection

Backspace Beams moving in

plane

Sound

pressure

Die size < 0,7 mm² Resolution: 25dB High dynamic : from 25dB to 120dB Standard M&NEMS technology

Differential measurement Low voltage (<1V - No charge pump required) Robustness : mechanical stops easy to implement Low sensitivity to acceleration Insensitive to humidity

Die size : 1,2 mm²

Resolution: 29dB resolution (SNR = 94dB –

Res.[dB])

Specific process (not compatible with inertial

sensor)

State of the art : Example of commercial capacitive microphone

+E

xp

ecte

d c

ha

racte

ristics

MEMS webinar | 40

© CEA. All rights reserved

M&NEMS: A generic sensor platform Miniaturized sensors

Generic platform

sensors fusion +

1 common electronic

Not sensitive to parasiticsMEMS size inertial mass

+Nano-size piezoresistive gauge

Well known and robustpiezoresisitive detection

Strongly differentiated approach (+15 patents)

3-axis

Gyroscope

3-axis

Magneto

3-axis

Accelero

X

ZY

Pressure

sensorMicrophone

2 New Innovative Sensors under developmentMEMS webinar | 41

© CEA. All rights reserved

M&NEMS in MEMS business journals

MEMS Trends : MEMS Technology evolution - by Yole Developpement (n°16 - Oct. 2013)

This maturing of the production technology,potentially requiring some different approachto make the next stepwise improvement incost and performance, could present a ripeopportunity for disruptive approaches. Whilelaunching a new technology at smart phonecosts and volumes will be extremelychallenging, CEA-Leti’s piezo resistive sensorplatform looks like one promising alternative,especially if they can indeed include themagnetometer in the same process for 9 DoFon a single chip.

MEMS webinar | 42

© CEA. All rights reserved

M&NEMS in MEMS business journals

“M&NEMS technology has game changing potential for combo sensors”

“Sensor market for consumer applications is wellunderway, making it very difficult for newcomersto gain significant traction. Such a radically newapproach could however change the playingfield, and allow newcomers to join the fray! ”

MEMS Market Brief - IHS iSuppli - March 2013

MEMS webinar | 43

© CEA. All rights reserved

9-axis M&NEMS platform is currently being transferred to Tronicsin a non exclusive licencing, involving a Tier 1 pilot customer

Tronics’ goals

6DOF on a 4mm² die by 2014-2015

9DOF on a 5 mm² die by 2015-2016

2,5mm

1,6

mm

4mm² 3A3G

M&NEMS sensor6-axis M&NEMS

sensor

M&NEMS concept industrialization

MEMS webinar | 44

© CEA. All rights reserved

M&NEMS in pressTronics Manufactures the First Piezoresistive Nanowire 6DOF Inertial MEMS

Tronics announces that it has successfully manufactured the first single chip 6DOF MEMS based on the breakthrough piezoresistive nanowire technology, licensed from CEA-Leti. This is a major step towards the industrialization of 6DOF and 9DOF products.

Grenoble, France; Dallas, TX (PRWEB) February 24, 2014 -- One year after announcing the industrialization of CEA-Leti’s

M&NEMS technologies, Tronics has successfully designed and manufactured the first batch of 6DOF MEMS chips, with 3

accelerometers and 3 gyroscopes on a single die. With a die size of less than 4mm2, this 6DOF MEMS chip is one of the

smallest in the industry, and further optimization will make it the smallest.

(…)

The initial performance results are very promising. The sensitivity, power consumption, and noise characteristics are in line

with the design models. This first functional batch is an important milestone towards high volume production. The

industrialization work will continue through 2014, with the first commercial samples available in Q4 2014. An ASIC is also

being designed and will be available in 2014 to complete the sensor platform.

In addition to the 6DOF device, Tronics has also designed a very compact 9DOF monolithic MEMS. Samples will be

available by the end of this year.

Pascal Langlois, CEO of Tronics Group, said: “This is a major step in the execution of our strategy to offer innovative

technologies for Consumer Products with the intent to give IDMs and OEMs access to state of the art inertial solutions in

terms of process technology, size, power consumption and performance. Tronics is delighted to have already partnered with

a leading customer and we are very pleased to dramatically reduce time to market and enable superior end product

performance.”

MEMS webinar | 45

© CEA. All rights reserved

Summary

Short overview of Léti

The context of MEMS

The next steps in MEMS: Generic platforms

Physical sensors

Chemical and biological sensors

Conclusion

MEMS webinar | 46

© CEA. All rights reserved

NEMS for mass detection

40

2

-=-= lM

f

m

f

eff

Responsivity

3

0

2 lMm -=

Resolution

• NEMS resonators represent an universal mass sensor notably for gas detection

Mass adsorption inducedresonance frequency shift

Mass

loading

Mass

loading

1st Interests for NEMS : very small characteristic length

• High resolution• Very short respond time• High integration

MEMS webinar | 47

© CEA. All rights reserved

Why using resonant NEMS ?

40

2

-=-= lM

f

m

f

eff

32010 l

Q

Mm

DReff

=-

Mass detection below ato gram

(10-18 g) in ambient air

Detection of few molecules

aggregates

~ a few zg (10-21g) to yg (10-24 g)

Sensitivity Resolution

δm

MEMS webinar | 48

© CEA. All rights reserved

NEMS platform at LETI

| 49

Nano bridgeMass sensor

Magnetomotive transduction

L~5 µm – w~100nm

NanowireMass sensor

PiezoR

L~5 µm – w~100nm

Nano cantilever Mass sensor

PiezoR detection

L~1 µm – w~80nm

L~3 µm – w~40nm

L~5 µm – w~100nm

Nano cantilever Clock reference

SG-MOSFET detection

NanowireMass sensorJunctionLess

detectio

L~5 µm – w~100nm

Nano cantilever Force sensor

PiezoR detection

MEMS webinar

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“crossbeam” NEMS

• Cantilever beam : 3.2 x 0.3 µm2

• PZR nanogauges : 400 x 80 nm2

Sensitivity 17 zg/Hz

S2

S1

EO

1 µm

released beam

lateral nanogauges

E. Mile et al, Nanotechnology, 2010

Brownian displacement detected 0.001Å /√Hz

(detection limit)

NEMS Crossbeam concept: provides a very high signal and high SNR

Mass detection below ato gram in ambient air (m = 10-18 g)

MEMS webinar | 50

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Application to gas analysis: system vision Gas Chromatography (GC) is a well-known separation method

Introduction

GC column provides selectivity by separating in time and space the gas mixture components NEMS detectors sequentially detect the elution peaks at the GC output

Both GC column and NEMS detectors can be miniaturized and fabricated with VLSI silicon micro- and nanofabrication techniques.

Injection of the gas mixture

Carrier gas flow

GC column

NEMS chip

MEMS webinar | 51

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From mass sensing to gas sensor: a complex system

Pre-analytical module

SamplingConcentration

Filtering

µGC

- Selectivity

- Sensitivity

- Quantitative measurments

Separation

Multi-gas sensor integrated in a same die through micro & nano technologies

Analytical module

Detection Data treatment

Pre-analytical module:

- PC ( x 1000) with SNW or CNTs

- µGC for temporal separation

Analytical module: NEMS and electronicsMEMS webinar | 52

© CEA. All rights reserved

Improved fluidic efficiency

1 L inlet

dead volume

1 L inlet

dead volume

0.5 1 1.5 2 2.5 3 3.5 4 4.5 Time (sec)

Ideal

0.5 1 1.5 2 2.5 3 3.5 4 4.5 Time (sec)

0.5 1 1.5 2 2.5 3 3.5 4 4.5 Time (sec)

0.5 1 1.5 2 2.5 3 3.5 4 4.5 0.5 1 1.5 2 2.5 3 3.5 4 4.5 Time (sec)

Ideal

Dead volumes in a tube with diameter asymmetric discontinuity

Courtesy J.Simonson, Sandia Nat. Lab.

2nd Interests for NEMS : allows very high integration between µGC and NEMS

Very reduced dead volumesMaintaining a good flow matching

MEMS webinar | 53

© CEA. All rights reserved

Multi-Gas measurements

Chromatogram measured by a crossbeam NEMS

NEMS is placed behind a 1m long silicon μGC

NEMS reach the same limit of detection, below the ppm level (in dynamic mode)

ppb level can be achieved with pre concentrator (eg for VOC applications)

Calibration with commercial Thermal Conductivity Detector (40x30x20 cm3) with

an optimal column

MEMS webinar | 54

© CEA. All rights reserved

Breakthrough Multigas Analysis Using Nano Silicon Technology

Dedicated applications Petrochemicals

Refineries & Chemistry

Gas-based energy productionNatural gas (BTU, Quality, Security) / Biogas (production andInjection) / Shale gas

EnvironmentVOCs / Sulfur compounds / Air quality / Labeling of materials

Other opportunitiesPortable tools for on field measurements

© CEA. All rights reserved

Two devices with different selectivities:1) PCL: unselective absorbingpolymer

2) DKAP: sensitive to phosphonate nerve agents

GC separation + functionalizedNEMS array gives increaseddiscrimination abilityLoD ~ 200 ppt demonstratedNEMS detect peaks as fast as 8 ms

Application – Multi Gas Analyzer

Mass

loading

MEMS webinar | 56

© CEA. All rights reserved

200mm NEMS wafer Doped silicon cantilever:L=Few µmw= 200nmTh=160nmResonance frequency~50MHz

200mm CMOS compatible Si NEMS & µGC

2m Silicon µGC on a 2 x 2 cm2 chip

Packaged

devices

integrating fluidic

channel,

functionalization,

detector and

interconnections

MEMS webinar | 57

© CEA. All rights reserved

Context: Caltech LETI Alliance

Functional validation of nanosystems- 15 years in nanosystems and nanosciences- Nanosciences and understanding of underlying physics - NEMS modeling- Biophysics and engineering

Integration- 200 & 300 mm technological platform- Systems architecture and integration (from design to packaging) - Applicative research- Technological transfers to industry

MEMS webinar | 58

© CEA. All rights reserved

One step further….

| 59

DistributedMultiGasSensing

NEMS Mass Spec

GAS

NEMS+GC

Nanowire TCD

JOINT LABLETI/APIX

VACUUM

NEMS array

Nano delivery

system

IRTSV, Paris 6, Caltech

Fluidic Biosensor Arrays

Cellular Sensor Arrays

Suspended µ/Nano channel Res.

(SNRs)

LETI,MIT, Caltech

SCPFM

(Single-cell Picoforce Microscopy)

Suspended µcantilever

(cell culture monitoring, genomics)

LIQUID

CRANN

NanowireNano relay

Transduction principles

Noise processesScaling effect

DEVICES

Case Western,

Lyon 1

MASS SENSING

MEMS webinar

© CEA. All rights reserved

Summary

Short overview of Léti

The context of MEMS

The next steps in MEMS: Generic platforms

Physical sensors

Chemical sensors

Conclusion

MEMS webinar | 60

© CEA. All rights reserved

PRINCIPLEMixing on a same device two different thicknesses:

A thick layer for the proof mass (MEMS)

A thin layer for the gauge (“NEMS part”, compatible

with DUV litho).

Highly efficient transduction: stress concentration

(design lever + size effect)

INTERESTS Generic process available for many kind of MEMS, using

standard tools and equipments.

Piezoresistive or resonant differential measurement (drift

limitation)

In-plane and out-of-plane detection

Possibility of sensors combo with simplified electronics.

CMOS Compatible.

6 mask levels (without packaging)

Concepts and technology protected by +10 patents

M&NEMS technology

Integrated 3 axes M&NEMS magnetometer using coupled AF/F thin multilayers

Partial view of gyro

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NEMS technology

Demonstration of a full ultra-sensitive gas analysis system (< 1 ppb LoD using a preconcentrator)

NEMS for ultra sensitive mass sensing

Technology jointly developped by Caltech

and Léti.

NEMS-based resonant sensors suited to

address domains of chemical and bio-sensing.

High-efficiency generic (patented) design of

NEMS resonator based on electrostatic

actuation and piezoresistive detection (high

SNR, high frequency).

Creation of a joint start-up: APIX

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Léti vision on MEMS

MEMS technologies are facing a maturity period. High

constraints for manufacturing simplification and cost reduction. Léti isdevelopping technologies addressing these constraints, thanks to a global approach along all the development chain.

Léti is preparing new generations of M(N)EMS.-M&NEMS is a generic technology allowing to build sensors combo.

(reasonable costs, excellent ratio perfs/die area)

-NEMS for chemical and bio chemical applications.

higher time-to-market constraints as MEMS marketsincrease. Léti is building strategic partnerships on top priority industrial

projects.

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MEMS: The future?

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