Market and Technology Trends in WBG - download.mesago.de · Power device technology positioning WBG...
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From Technologies to Market Market and Technology Trends in WBG Power Module Packaging From Technologies to Market © 2015
Transcript of Market and Technology Trends in WBG - download.mesago.de · Power device technology positioning WBG...
From Technologies to Market
Market and Technology
Trends in WBG Power Module
Packaging
From Technologies to Market
© 2015
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POWER ELECTRONICS AND 21ST CENTURY CHALLENGES
World Evolution lead to new challenges for power electronics
Energy Production
Transportationneeds
Efficiency Improvement
RenewableEnergy
Population Growth Mega Cities
Limited Resources CO2 Emission Reduction
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POWER ELECTRONICS BUSINESS UPDATE
Power device market evolution between 2006 and 2020
After two tough years, the 2014 is the recovery year with a market of 11.5 B$.
+8.4%
> 400 V
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Low Voltage
400 -> 900V
Medium Voltage
1.2kV -> 1.7kV
High Voltage
2kV -> 3.3 kV
Very High Voltage
> 3.3kV
2014 $8.430M $2.021M $748M $327M
2020 $11.881M $3.541M $1.208M $552M
$M
$2.000M
$4.000M
$6.000M
$8.000M
$10.000M
$12.000M
$14.000MPower Electronics, by voltage. Comparison 2014 - 2020
POWER ELECTRONICS BUSINESS UPDATE
What evolution for power devices between 2014 and 2020? Split by voltage
Medium voltage devices will have the highest growth by 2020.
+41%
+74%
+61%+69%
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POWER ELECTRONICS
Geographical split
• Asia is still the destination of more than 75% of power products. Most of the integrators are located in China, Japan or Korea.
• The biggest integrators’ production lines are concentrated in China, with almost 40% of devices delivered to this country.
• Asia’s share is increasing as European integrators open new manufacturing lines in these “low-cost” manufacturing countries.
• Asia’s dominance over power device sales has grown from 65% in 2011
• Europe is very dynamic as well with top players in traction, grid, PV inverters and motor control.
• The big names of the power electronics industry are historically from Japan. Their industry is very much vertically integrated, with a considerable part of devices sold in the local market in Japan.
Asia is by far the main
integrator of power
electronics converters
Breakdown of 2014
~$11.5B market
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SEMICONDUCTOR DEVICES: PLENTY OF OPPORTUNITIES FOR WIDE BANDGAP
Life–Cycle of Power Device Technologies
A new generation every ~20 years…
Bip
ola
rU
nip
ola
rFi
eld
Eff
ect
Tra
nsi
sto
rs
DiodeGTO
Thyristor
BJT
IGCT
1970 1990 2020
IGBT
SiC BJT
SJMOSFET
SiliconSiC
GaN
Gen. 2Max. 600V
Gen. 6Max. 6500V
…
SiC JFET
GaN HEMT
MOSFET
2015
Thyristor & MOSFET era Si IGBT era WBG era??
SiC MOSFETSiC diode
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SEMICONDUCTOR DEVICES: PLENTY OF OPPORTUNITIES FOR WIDE BANDGAP
Figure-of-merit
• SiC will stay the preferred choice for high T° application
• GaN could possibly reach high-voltage values but thus will require bulk-GaN as the substrate.
• Silicon cannot compete at the high-frequency range
Base uponintrinsic
properties, Wide
BandGapcapabilitiesare much
more betterthan Silicon
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SEMICONDUCTOR DEVICES: PLENTY OF OPPORTUNITIES FOR WIDE BANDGAP
High electron mobility and high junction temperature are the key
characteristics.
High electron mobilityHigh Junction T°
No recovery time
during switching
Low lossesless energy to dissipate
Fewer cooling
needs
System size and
weight
reduction
High switching
frequency
Smaller filters
and passives
Intrinsic
properties
Impact on
operation
Impact on
power module
Impact on
power system
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SEMICONDUCTOR DEVICES: PLENTY OF OPPORTUNITIES FOR WIDE BANDGAP
Power device technology positioning
WBG devices are primarily positioned in high-end applications
1200V or more
600V or less
Pro
du
ct r
ange
Voltage
IGBTThyristor
IGCT…
SiC
MOSFET
Triacs
Bipolar…
3.3kV and more200V
GaN GaN
• Historically, silicon had the complete monopoly of the semiconductors industry in Integrated Circuits (IC), in Microchips and in Power Electronics.
• New raw materials for semiconductors such as Wide Bandgap materials Silicon Carbide (SiC) and Gallium Nitride (GaN)have been developed since some decades now.
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IMPLEMENTATION OF SIC IN POWER ELECTRONIC MARKET
Relative device market shares 2013 vs 2020
Currently, PFC and PV representthe largestapplications
for SiCdevices.
Source: SiC report 2014, Yole
Développement
PV
Rail
PFC
EV/HEV
InverterWind
Grid
PV inverter
Motor control
UPS
Others,
MilAero
$96 M $362 M
2013 2020
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MAIN PLAYERS – ORIGIN OF SIC INVOLVMENT
Large amount of companies
in SiCPlaygroung
From SiC material
to SiC deviceFrom Si to SiC
device technology
New entrant
SiC pure-playerFrom others III-V to SiC
device technology
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COMMERCIAL SIC DIODE PRODUCTS (1/2)
Date introduced to the marketplace
Before 2009, the market
wasdominated by
Cree and Infineon.
2003 20062002 2005 200820072001 2009
3rd gen. SBD
Feb 09
600V SBD
Feb 09
1.2kV SBD
Feb 09
1.2kV SBD
Feb. 2007
600V JBS
July 2009
1st gen. SBD
20012nd gen. SBD
May 2005
600V/10A SBD
Jan 2002
First 600V SBD
June 2001
600V/20A SBD
Aug. 2002
First 1.2kV SBD
Feb. 2003
(Next
slide)
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COMMERCIAL SIC DIODE PRODUCTS (2/2)
Date introduced to the marketplace
More playershave come
into the playgrounds.
Dual 600V SBD
Jan. 2014
650V/12A SBD
April 2013
2011 20132010 2012 201520142009
3rd gen. SBD
Feb 09
600V SBD
Feb 09
1.7kV SBD
April 2010
SBD
May 2010
1.2kV SBD
Feb 09
1.2 – 2.4kV SBD
Dec 2010
600V JBS
July 2009
600V SBD
Jan 2012
SBD Gen 2
July 2012
5th gen. SBD 650V
Sept. 2012
Based on thin-wafer
1.2kV SBD
Sept. 2012
1.2kV SBD
Nov. 2012
1.2kV/15&30A SBD
Mar 2013
600V & 1.2kV SBD
Sept 2013
8kV SBD
Nov 2013
1.7kV / 50A SBD
March 2014
5th gen. SBD 1,200V
July 2014
600V SBD
Jan, 2014
600V 10ASBD
April 2014
650V SBD
Jan. 2014
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COMMERCIAL SIC TRANSISTOR PRODUCTS
More and More SiCtransistors availables.
2010 20122009 2011 > 20142013
1.2kV JFET. Q2 2012
1.2kV / 20A MOSFET
May 2012
600V & 1.2kV
MOSFET
Dec 2010
1.2kV Noff JFET
Late 2008
1.2kV Noff BJT
2011
1.2kV MOSFET
Jan 2011
1.7kV & 1.2kV / 50A
MOSFET. May 2012
Prototype
Production
650V JFET
May 2012
1.7kV Noff JFET
April 2010
1.2kV Non JFET
April 2010
1.2kV Non 45mΩ
JFET. May 2011
6.5kV Thyristor
2011
1.2kV MOSFET
+ internal SBD
July 2012
1.2kV / 6A BJT
May 2008
1.7kV Noff BJT
Nov 2012
1.2kV / 6A BJT
Nov. 2012
1.2kV/10A
MOSFET
Feb 2013
1.2kV/35A
MOSFET
+ co-packSBD
Sept 2013
1.2kV / 45A MOSFET
March 2014
1.2kV MOSFET
20 mΩ. May 2014
1.2kV/50A MOSFET
June 2014
1.2 kV/ 8A JFET
March 2014
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POWER ELECTRONICS SIC DEVICE MANUFACTURING
Status of SiC device makers as of Q2 2015
6 47 Year5 3 2 1 0
Prototyping
Qualification
Ramp-up
Mass-production
Time to mass-production
New Japan Radio
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NEEDS ON POWER PACKAGING DEVELOPMENT
• Even if wide bang gap semiconductors comes to a sufficient TRL level. Power packaging is
becoming one of the bottleneck for wide adoption
• It is important to notice that market shares are not directly linked to when will the
component be available but rather when will integrators be able to get benefits from these
component is their systems
• Designing a totally new product with these new semiconductors will induced R&D expenses
that has to be compensated by the added value at the system level (cost, size, operating
condition, etc..) compare to regular Silicon solutions.
• To grab this added value, an integrator has to get full benefits from wide band gap devices
with:
• An increased operating frequency
• An increased operating temperature
• Latest developments in power packaging that enable low stray inductance package and
reliability at high temperature fully impact future trends in the compound semiconductor.
Integrationof Wide BandGapdevices isbecoming
key.
© 2015
Power packaging innovations:
Key developments for large WBG devices adoption
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POWER PACKAGING MARKET AND TRENDS
How is a standard power module designed?
- Power module with baseplate is the standard design (70 to 80% of available power modules).
- DBC (Direct Bond Copper) packaging is the most widespread packaging. These modules are complex and expensive.
- Common failure in a power module is caused by thermal cycling. Mismatching CTE (coefficient of thermal expansion) can make layers detach from one another. Some gel filling also cannot handle high temperatures.
A standard power
module is a complex
assembly of different materials including
active devices
Heatsink
Thermal grease
Substrate
SBD IGBT
Baseplate
DBC
Busbar connection
Solder
Copper metallization
Plastic case
Die attachInterconnection
Gel filling
Substrate attach
In red: Common failure locations
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COMPETITIVE PACKAGING TECHNOLOGY
Improvement aspects in packaging, with examples…
Many innovations are taking place in power module packaging
Die interconnection
DBC
+
baseplate
Die attach
Infineon .XT Lexus/Toyota modules:LS 600h
Prius 2010
Semikron Ag sintering
Semikron Skin
• GE power overlay• Delphi Viper• aPSI3D module
Improvements in packaging can be made in 3 different aspects:
• Die interconnection, which is searching for innovative wire bonding or no-wires connection for better lifetime and reliability
• Die attach, which uses new materials for better lifetime
• DBC+baseplate, which uses new materials and suppress layers for improved cooling and smaller size
All applicable to Si and SiC
Includes coolingDanfoss
Shower power
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POWER PACKAGING MARKET AND TRENDS
Which evolution for each part of modules?
Both materials and
design are evolving in the power
module
2015 2020 2025…2018
Standard
baseplateBaseplate
Double side
coolingPin-fin baseplate
Micro-channel
cooling
No baseplate?
TIMThermal
greasePCM
Which
evolution for
TIM? Removal?
Substrate
DBC
AMB
Leadframe Single/double layer
No substrate?
Die attach
Sn soldering TLPS Silver (paste/film) sintering
AuSn/AuGe
Brazing
Encapsulation
Silicon gel Epoxy resin
Silicon gel/ epoxy
resin high
temperature
New materials
such as
parylene
Interconnections
Al wire
bonding
Ribbon
bonding
Cu wire
bonding
‘‘ Top side’’
bonding Ball bonding
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POWER PACKAGING MARKET AND TRENDS
Roadmap of power module packaging design
In the future power
modules will have been entirely
reshaped, with the changes
depending on the power targeted
Bosch example• Molded package• Double side soldering• Low inductance
Mitsubishi example• Six Pack IGBT/Diode Package• Cooling fin• Thick copper layer for thermal
spreading• Direct substrate cooling
Mid-power modulesDesign evolution
Die on heatsink• Die attach: film
sintering? Gold sintering? Glue? Silver oxalate?
• Ceramic heatsink?• Ball bonding?
2018
2020
2014
2025
• Wide use of leadframe• Over-molded package• Top interconnections• Ag sintering for die attach
• Encapsulation with parylene• Ribbon bonding• Silver (Ag) sintering for die
attach• Pin-fin baseplate
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WBG PACKAGING
Module level
Lowinductance and high
temperaturepackaging are key issues for
WBG module
packaging.
APEI HT-3000 WBG power module: 1200 V,
+400A, 200+°C, industry standard footprint;
Parasitic inductance
comparison between the HT-
3000 and other power module
types
Linpak has a very low-inductive internal module
design and the massive DC-connection enables
both, a very low-inductive busbar design and a high
current carrying capability. LinPak is becoming the
latest standard for IGBT and could be used for
future SiC solutions.
As courtesy of ABB
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CONCLUSION
• WBG material provide additional possibilities compare to regular Silicon. Such performances can havebenefits all over the value chain, from the device to the converters and systems.
• After many years of developments, WBG devices exist now on the marketplace. Their performances interm of voltage and current rage are compliant with most of designers needs.
• However, these devices have not spread over the market and reach a large volume. Packaging is one ofthe factors slows down the market adoption.
• Low inductance and high temperature packaging are key issues for WBG module packaging. Despitesome intial tentatives, more efforts are needed to develop suitable packaging for WBG modules tobring WBG devices to a larger market.
ISiCPEAW 2015 - SiC market and prospects - GUEGUEN
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ABOUT THE AUTHORS
Biography & contact
Hong LIN
Dr. Hong Lin works at Yole Développement as a technology and market analyst since 2013. She is specialized in compoundsemiconductors and provides technical and economic analysis. Before joining Yole Développement, she worked as R&D engineerat Newstep Technologies. She holds a Ph.D in Physics and Chemistry of materials.
