LTC5592 - Dual 1.6GHz to 2.7GHz High Dynamic Range … · 2020. 2. 1. · is optimized for 1.6GHz...

LTC5592

15592fa

For more information www.linear.com/LTC5592

IFAMP ADC

IFAMP

RF2300MHz TO

2400MHzLNA

BIAS

BIAS

SYNTH

VCCIF3.3V or 5V

VCCIF

VCC3.3V

VCC

22pF

22pF

22pF

1µF

22pF 1µF

22pF

150nH 150nH

1nF

1nF

190MHzSAW

190MHzBPF

IMAGEBPF

RFA

RFB

ENA

LO

ENA(0V/3.3V)

LO 2160MHz2.2pF

VCCA

VCCB

IFA+ IFA–

IFB+ IFB–

5592 TA01a

LOAMP

LOAMP

ENB ENB(0V/3.3V)

RF2300MHz TO

2400MHzLNA

22pFIMAGE

BPF

IFAMP

IFAMP ADC

150nH 150nH

1nF

1nF 190MHzSAW

190MHzBPF

Typical applicaTion

FeaTures DescripTion

Dual 1.6GHz to 2.7GHz High Dynamic Range

Downconverting Mixer

The LTC®5592 is part of a family of dual-channel high dy-namic range, high gain downconverting mixers covering the 600MHz to 4.5GHz RF frequency range. The LTC5592 is optimized for 1.6GHz to 2.7GHz RF applications. The LO frequency must fall within the 1.5GHz to 2.5GHz range for optimum performance. A typical application is a LTE or WiMAX receiver with a 2.3GHz to 2.7GHz RF input and low side LO.

The LTC5592’s high conversion gain and high dynamic range enable the use of lossy IF filters in high selectivity receiver designs, while minimizing the total solution cost, board space and system-level variation. A low current mode is provided for additional power savings and each of the mixer channels has independent shutdown control.

Wideband LTE Receiver

applicaTions

n Conversion Gain: 8.3dB at 2.35GHzn IIP3: 27.3dBm at 2.35GHzn Noise Figure: 9.8dB at 2.35GHzn 15.3dB NF Under 5dBm Blockingn High Input P1dBn 47dB Channel-to-Channel Isolationn 3.3V Supply, 1.3W Power Consumptionn Low Power Mode for 0.8W Consumptionn Independent Channel Shutdown Controln 50Ω Single-Ended RF and LO Inputsn LO Input Matched In All Modesn 0dBm LO Drive Leveln Small Package and Solution Sizen –40°C to 105°C Operation

n 3G/4G Wireless Infrastructure Diversity Receivers (LTE, W-CDMA, TD-SCDMA, WiMAX, GSM 1800)n MIMO Infrastructure Diversity Receiversn High Dynamic Range Downmixer ApplicationsL, LT, LTC, LTM, Linear Technology and the Linear logo are registered trademarks of Linear Technology Corporation. All other trademarks are the property of their respective owners.

High Dynamic Range Dual Downconverting Mixer FamilyPART NUMBER RF RANGE LO RANGE

LTC5590 600MHz to 1.7GHz 700MHz to 1.5GHz

LTC5591 1.3GHz to 2.3GHz 1.4GHz to 2.1GHz



Wideband Conversion Gain and IIP3 vs IF Frequency

IF FREQUENCY (MHz)160

6

7

G C (d

B)

IIP3 (dBm)

9

10

11

13

14

12

170 190

5592 TA01b

8

180 200 210 22021

23

25

27

28

29

22

24

26

LO = 2160MHzPLO = 0dBmRF = 2350 ±30MHzTEST CIRCUIT IN FIGURE 1

GC

IIP3

LTC5592 ONLY, MEASURED ON EVALUATION BOARD

http://www.linear.com/LTC5592

LTC5592

25592fa


pin conFiguraTionabsoluTe MaxiMuM raTings

Supply Voltage (VCC) ...............................................4.0VIF Supply Voltage (VCCIF) .........................................5.5VEnable Voltage (ENA, ENB) ..............–0.3V to VCC + 0.3VBias Adjust Voltage (IFBA, IFBB) ......–0.3V to VCC + 0.3VPower Select Voltage (ISEL) .............–0.3V to VCC + 0.3VLO Input Power (1GHz to 3GHz) .............................9dBmLO Input DC Voltage ............................................... ±0.1VRFA, RFB Input Power (1GHz to 3GHz) ................15dBmRFA, RFB Input DC Voltage .................................... ±0.1VOperating Temperature Range (TC) ........ –40°C to 105°CStorage Temperature Range .................. –65°C to 150°CJunction Temperature (TJ) .................................... 150°C

(Note 1)

24 23 22 21 20 19

7 8 9

TOP VIEW

25GND

UH PACKAGE24-LEAD (5mm × 5mm) PLASTIC QFN

10 11 12

6

5

4

3

2

1

13

14

15

16

17

18RFA

CTA

GND

GND

CTB

RFB

ISELENA

LO

GND

ENB

GND

GND

IFGN

DA

IFA+

IFA–

IFBA

V CCA

GND

IFGN

DB IFB+

IFB–

IFBB

V CCB

TJMAX = 150°C, θJC = 7°C/W

EXPOSED PAD (PIN 25) IS GND, MUST BE SOLDERED TO PCB

orDer inForMaTionLEAD FREE FINISH TAPE AND REEL PART MARKING PACKAGE DESCRIPTION TEMPERATURE RANGE

LTC5592IUH#PBF LTC5592IUH#TRPBF 5592 24-Lead (5mm × 5mm) Plastic QFN –40°C to 105°C

Consult LTC Marketing for parts specified with wider operating temperature ranges. Consult LTC Marketing for information on non-standard lead based finish parts.For more information on lead free part marking, go to: http://www.linear.com/leadfree/ For more information on tape and reel specifications, go to: http://www.linear.com/tapeandreel/

Dc elecTrical characTerisTics

PARAMETER CONDITIONS MIN TYP MAX UNITS

Power Supply Requirements (VCCA, VCCB, VCCIFA, VCCIFB)

VCCA, VCCB Supply Voltage (Pins 12, 19) 3.1 3.3 3.5 V

VCCIFA, VCCIFB Supply Voltage (Pins 9, 10, 21, 22) 3.1 3.3 5.3 V

Mixer Supply Current (Pins 12, 19) Both Channels Enabled 199 237 mA

IF Amplifier Supply Current (Pins 9, 10, 21, 22) Both Channels Enabled 202 252 mA

Total Supply Current (Pins 9, 10, 12, 19, 21, 22) Both Channels Enabled 401 489 mA

Total Supply Current – Shutdown ENA = ENB = Low 500 µA

Enable Logic Input (ENA, ENB) High = On, Low = Off

ENA, ENB Input High Voltage (On) 2.5 V

ENA, ENB Input Low Voltage (Off) 0.3 V

ENA, ENB Input Current –0.3V to VCC + 0.3V –20 30 µA

Turn On Time 0.9 µs

Turn Off Time 1 µs

VCC = 3.3V, VCCIF = 3.3V, ENA = ENB = High, ISEL = Low, TC = 25°C, unless otherwise noted. Test circuit shown in Figure 1. (Note 2)

LTC5592

35592fa


Dc elecTrical characTerisTics VCC = 3.3V, VCCIF = 3.3V, ENA = ENB = High, ISEL = Low, TC = 25°C, unless otherwise noted. Test circuit shown in Figure 1. (Note 2)PARAMETER CONDITIONS MIN TYP MAX UNITS

Low Power Mode Logic Input (ISEL) High = Low Power, Low = Normal Power Mode

ISEL Input High Voltage 2.5 V

ISEL Input Low Voltage 0.3 V

ISEL Input Current –0.3V to VCC + 0.3V –20 30 µA

Low Power Mode Current Consumption (ISEL = High)

Mixer Supply Current (Pins 12, 19) Both Channels Enabled 130 156 mA

IF Amplifier Supply Current (Pins 9, 10, 21, 22) Both Channels Enabled 122 156 mA

Total Supply Current (Pins 9, 10, 12, 19, 21, 22) Both Channels Enabled 252 312 mA


Conversion Gain RF = 1950MHz RF = 2350MHz RF = 2550MHz

6.8

9.5 8.3 8.1

dB dB dB

Conversion Gain Flatness RF = 2350 ±30MHz, LO = 2160MHz, IF = 190 ±30MHz ±0.14 dB

Conversion Gain vs Temperature TC = –40ºC to 105ºC, RF = 2350MHz –0.006 dB/°C

Input 3rd Order Intercept RF = 1950MHz RF = 2350MHz RF = 2550MHz

24.0

26.3 27.3 26.3

dBm dBm dBm

SSB Noise Figure RF = 1950MHz RF = 2350MHz RF = 2550MHz

9.4 9.8 9.9

dB dB dB


LO Input Frequency Range 1500 to 2500 MHz

RF Input Frequency Range Low Side LO High Side LO

1600 to 2700 1600 to 2300

MHz MHz

IF Output Frequency Range Requires External Matching 5 to 500 MHz

RF Input Return Loss ZO = 50Ω, 1600MHz to 2700MHz >13 dB

LO Input Return Loss ZO = 50Ω, 1700MHz to 2500MHz >17 dB

IF Output Impedance Differential at 190MHz 379Ω||2.2pF R||C

LO Input Power fLO = 1700MHz to 2500MHz –4 0 6 dBm

LO to RF Leakage fLO = 1700MHz to 2500MHz 37 dB

Channel-to-Channel Isolation fRF = 1600MHz to 2700MHz >47 dB

ac elecTrical characTerisTics VCC = 3.3V, VCCIF = 3.3V, ENA = ENB = High, ISEL = Low, TC = 25°C, PLO = 0dBm, PRF = –3dBm (∆f = 2MHz for two tone IIP3 tests), unless otherwise noted. Test circuit shown in Figure 1. (Notes 2, 3, 4)

Low Side LO Downmixer Application: ISEL = Low, RF = 1900MHz to 2700MHz, IF = 190MHz, fLO = fRF – fIF

LTC5592

45592fa



Conversion Gain RF = 2350MHz 7.1 dB

Input 3rd Order Intercept RF = 2350MHz 22.3 dBm

SSB Noise Figure RF = 2350MHz 10.2 dB

Input 1dB Compression RF = 2350MHz, VCCIF = 3.3V RF = 2350MHz, VCCIF = 5V

11.3 12.6

dBm dBm

Note 1: Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. Exposure to any Absolute Maximum Rating condition for extended periods may affect device reliability and lifetime.Note 2: The LTC5592 is guaranteed functional over the case operating temperature range of –40°C to 105°C (θJC = 7°C/W).

Note 3: SSB Noise Figure measured with a small-signal noise source, bandpass filter and 6dB matching pad on RF input, bandpass filter and 6dB matching pad on the LO input, and no other RF signals applied.Note 4: Channel A to channel B isolation is measured as the relative IF output power of channel B to channel A, with the RF input signal applied to channel A. The RF input of channel B is 50Ω terminated and both mixers are enabled.

ac elecTrical characTerisTics VCC = 3.3V, VCCIF = 3.3V, ENA = ENB = High, TC = 25°C, PLO = 0dBm, PRF = –3dBm (∆f = 2MHz for two tone IIP3 tests), unless otherwise noted. Test circuit shown in Figure 1. (Notes 2, 3)


SSB Noise Figure Under Blocking fRF = 2400MHz, fLO = 2210MHz, fBLOCK = 2500MHz PBLOCK = 5dBm PBLOCK = 10dBm

15.3 21.2

dB dB

2RF-2LO Output Spurious Product (fRF = fLO + fIF/2)

fRF = 2255MHz at –10dBm, fLO = 2160MHz, fIF = 190MHz

–68 dBc

3RF-3LO Output Spurious Product (fRF = fLO + fIF/3)

fRF = 2223.33MHz at –10dBm, fLO = 2160MHz, fIF = 190MHz

–74 dBc

Input 1dB Compression fRF = 2350MHz, VCCIF = 3.3V fRF = 2350MHz, VCCIF = 5V

11 14.6

dBm dBm

Low Side LO Downmixer Application: ISEL = Low, RF = 1900MHz to 2700MHz, IF = 190MHz, fLO = fRF – fIF

Low Power Mode, Low Side LO Downmixer Application: ISEL = High, RF = 1900MHz to 2700MHz, IF = 190MHz, fLO = fRF – fIF


Conversion Gain RF = 1750MHz RF = 1950MHz RF = 2150MHz

9.1 8.7 8.3

dB dB dB

Conversion Gain Flatness RF = 1950 ±30MHz, LO = 2140MHz, IF = 190 ±30MHz ±0.33 dB

Conversion Gain vs Temperature TC = –40ºC to 105ºC, RF = 1900MHz –0.005 dB/°C

Input 3rd Order Intercept RF = 1750MHz RF = 1950MHz RF = 2150MHz

25.3 25.4 25.1

dBm dBm dBm

SSB Noise Figure RF = 1750MHz RF = 1950MHz RF = 2150MHz

9.2 9.8

10.4

dB dB dB

SSB Noise Figure Under Blocking fRF = 1950MHz, fLO = 2140MHz, fBLOCK = 1850MHz PBLOCK = 5dBm PBLOCK = 10dBm

16.5 22.7

dB dB

2LO-2RF Output Spurious Product (fRF = fLO – fIF/2)

fRF = 2045MHz at –10dBm, fLO = 2140MHz, fIF = 190MHz

–68 dBc

3LO-3RF Output Spurious Product (fRF = fLO – fIF/3)

fRF = 2076.67MHz at –10dBm, fLO = 2140MHz, fIF = 190MHz

–75 dBc

Input 1dB Compression RF = 1950MHz, VCCIF = 3.3V RF = 1950MHz, VCCIF = 5V

10.6 14.0

dBm dBm

High Side LO Downmixer Application: ISEL = Low, RF = 1600MHz to 2300MHz, IF = 190MHz, fLO = fRF + fIF

LTC5592

55592fa


RF FREQUENCY (MHz)1900

35

ISOL

ATIO

N (d

B)

45

2300

5592 G03

40

2100 2500 2700

55

50

–40°C25°C85°C

Conversion Gain and IIP3 vs RF Frequency SSB NF vs RF Frequency Channel Isolation vs RF Frequency

1950MHz Conversion Gain, IIP3 and NF vs LO Power



Low Side LOTypical ac perForMance characTerisTicsVCC = 3.3V, VCCIF = 3.3V, ENA = ENB = High, ISEL = Low, TC = 25°C, PLO = 0dBm, PRF = –3dBm (–3dBm/tone for two-tone IIP3 tests, ∆f = 2MHz), IF = 190MHz, unless otherwise noted. Test circuit shown in Figure 1.

Conversion Gain, IIP3 and NF vs Supply Voltage (Single Supply)

Conversion Gain, IIP3 and NF vs Supply Voltage (Dual Supply)

Conversion Gain, IIP3 and RF Input P1dB vs Temperature


8

10

IIP3

(dBm

) GC (dB)

14

16

18

24

22

20

1700 2100

5592 G01

12

1900 2300 2500 2700

28

26

6

7

8

10

11

12

15

14

13

9

17

16

GC

IIP3

–40°C25°C85°C

105°C

6

7

8

SSB

NF (d

B)10

11

12

15

14

13

5592 G02

9

16

RF FREQUENCY (MHz)1500 1700 21001900 2300 2500 2700

–40°C25°C85°C

105°C

LO INPUT POWER (dBm)–6

6

8

10

G C (d

B), I

IP3

(dBm

)

SSB NF (dB)

14

16

18

24

22

20

26

–4 0

5592 G04

12

–2 2 4 6

28

0

8

12

16

4

20

2

10

14

18

6

22

–40°C25°C85°C

NF

GC

IIP3


6

8

10

G C (d

B), I

IP3

(dBm

)SSB NF (dB)

14

16

18

24

22

20

26

–4 0

5592 G05

12

–2 2 4 6

28

0

8

12

16

4

20

2

10

14

18

6

22

–40°C25°C85°C

GC

NF

IIP3


6

8

10

G C (d

B), I

IP3

(dBm

)

SSB NF (dB)

14

16

18

24

22

20

26

–4 0

5592 G06

12

–2 2 4 6

28

0

8

12

16

4

20

2

10

14

18

6

22

–40°C25°C85°C

IIP3

GC

NF

VCCIF SUPPLY VOLTAGE (V)3

68

10

G C (d

B), I

IP3

(dBm

)SSB NF (dB)

14

1618

24

22

20

26

3.5 4.5

5592 G08

12

4 5 5.5

3028

0

8

12

16

4

20

2

10

14

18

6

24

22

–40°C25°C85°C

IIP3

GC

NFRF = 2350MHzVCC = 3.3V

CASE TEMPERATURE (°C)–40

68

10G C (d

B), I

IP3

(dBm

), P1

dB (d

Bm)

14

16

18

24

22

20

26

–10 50

5592 G09

12

20 80 110

3028

IIP3

P1dB

GC

VCCIF = 3.3VVCCIF = 5V

RF = 2350MHz

VCC, VCCIF SUPPLY VOLTAGE (V)3

6

8

10

G C (d

B), I

IP3

(dBm

)

SSB NF (dB)

14

16

18

24

22

20

26

3.1 3.3

5592 G07

12

3.2 3.4 3.5 3.6

28

0

8

12

16

4

20

2

10

14

18

6

22

–40°C25°C85°C

GC

NF

IIP3

RF = 2350MHzVCC = VCCIF

LTC5592

65592fa


SSB Noise Figure vs RF Blocker Power LO Leakage vs LO Frequency RF Isolation vs RF Frequency

Conversion Gain Distribution IIP3 Distribution SSB Noise Figure Distribution

2-Tone IF Output Power, IM3 and IM5 vs RF Input Power

Single-Tone IF Output Power, 2 × 2 and 3 × 3 Spurs vs RF Input Power

2 × 2 and 3 × 3 Spur Suppression vs LO Input Power

Low Side LOTypical ac perForMance characTerisTicsVCC = 3.3V, VCCIF = 3.3V, ENA = ENB = High, ISEL = Low, TC = 25°C, PLO = 0dBm, PRF = –3dBm (–3dBm/tone for two-tone IIP3 tests, ∆f = 2MHz), IF = 190MHz, unless otherwise noted. Test circuit shown in Figure 1.


10

20

ISOL

ATIO

N (d

B)

30

50

60

40

1700 21001900 2300

5592 G15

2500 2700

70

RF-IF

RF-LO

GAIN (dB)7.5

0

5

10

DIST

RIBU

TION

(%)

15

25

20

8 8.5

5592 G16

9

RF = 2350MHz

85°C25°C–40°C

NOISE FIGURE (dB)7

0

15

10

5

20

DIST

RIBU

TION

(%)

25

35

30

8 109

5592 G18

1211

50

40

45RF = 2350MHz85°C

25°C–40°C

RF INPUT POWER (dBm/TONE)–12

–80

–70

–50

–60OUTP

UT P

OWER

(dBm

/TON

E)

–40

–30

–20

–10

10

0

–9 –3 0

5592 G10

–6 3 6

20

IFOUT

RF1 = 2349MHzRF2 = 2351MHzLO = 2160MHz

IM5IM3

RF INPUT POWER (dBm)–12

–80

–70

–60

OUTP

UT P

OWER

(dBm

)–40

–30

0

–10

–20

10

–9 –3

5592 G11

–50

–6 0 3 6

20IFOUT(RF = 2350MHz)

LO = 2160MHz

3RF-3LO(RF = 2223.33MHz)

2RF-2LO(RF = 2255MHz)


–85

–80

RELA

TIVE

SPU

R LE

VEL

(dBc

)

–75

–65

–70

–3 0

5592 G12

3 6

–55

–60

IF = 190MHzPRF = –10dBmLO = 2160MHz

3RF-3LO(RF = 2223.33MHz)

2RF-2LO(RF = 2255MHz)

IIP3 (dBm)24.50

15

10

5

20

DIST

RIBU

TION

(%)

25

35

30

25.5 27.526.5

5592 G17

28.5

40RF = 2350MHz

85°C25°C–40°C

RF BLOCKER POWER (dBm)–20

8

10

12

14SSB

NF

(dB)

16

22

20

18

–15 –5–10 0

5592 G13

5 10

24PLO = –3dBmPLO = 0dBmPLO = 3dBmPLO = 6dBm

RF = 2400MHzBLOCKER = 2500MHz

LO FREQUENCY (MHz)1500

–50

–40

LO L

EAKA

GE (d

Bm)

–30

–10

–20

1700 1900 2100

5592 G14

25002300

0

LO-IF

LO-RF

LTC5592

75592fa


Typical ac perForMance characTerisTics

Conversion Gain and IIP3 vs RF Frequency SSB NF vs RF Frequency

2-Tone IF Output Power, IM3 and IM5 vs RF Input Power




Low Power Mode, Low Side LOVCC = 3.3V, VCCIF = 3.3V, ENA = ENB = High, ISEL = High, TC = 25°C, PLO = 0dBm, PRF = –3dBm (–3dBm/tone for two-tone IIP3 tests, ∆f = 2MHz), IF = 190MHz, unless otherwise noted. Test circuit shown in Figure 1.




6

8

7

NOIS

E FI

GURE

(dB)

10

9

12

11

14

13

5592 G20

16

15

RF FREQUENCY (MHz)1500 1700 21001900 2300 2500 2700

–40°C25°C85°C

105°C

5

7

9

IIP3

(dBm

) GC (dB)

13

15

17

23

21

19

5592 G19

11

25

5

9

11

13

7

15

6

10

12

14

8GC

RF FREQUENCY (MHz)1500 1700 21001900 2300 2500 2700

–40°C25°C85°C

105°C

IIP3


5

7

9

G C (d

B), I

IP3

(dBm

)

SSB NF (dB)13

15

17

25

23

21

19

–4 0

5592 G22

11

–2 2 4 6

8

12

16

4

20

0

2

10

14

18

6

IIP3

GC

NF

–40°C25°C85°C


5

7

9

11GC

(dB)

, IIP

3 (d

Bm)

SSB NF (dB)

15

17

19

25

23

21

3.1 3.3

5592 G25

13

3.2 3.4 3.5 3.6

8

12

16

4

20

0

2

10

14

18

6–40°C25°C85°C

IIP3

GC

NF

VCC = VCCIFRF = 2350MHz


5

7

9

G C (d

B), I

IP3

(dBm

)SSB NF (dB)13

15

17

25

23

21

19

–4 0

5592 G23

11

–2 2 4 6

8

12

16

4

20

0

2

10

14

18

6–40°C25°C85°C

IIP3

GC

NF


5

9

7

11GC

(dB)

, IIP

3 (d

Bm)

SSB NF (dB)

15

17

19

25

23

21

–4 0

5592 G24

13

–2 2 4 6

8

12

16

4

20

0

2

10

14

18

6–40°C25°C85°C

IIP3

GC

NF


5

7

9

11GC

(dB)

, IIP

3 (d

Bm)

SSB NF (dB)

15

17

19

25

23

21

3.5

5592 G26

13

4 4.5 5 5.5

8

12

16

4

20

0

2

10

14

18

6–40°C25°C85°C

IIP3

GC

NF

VCC = 3.3VRF = 2350MHz


5

7

9

11

G C (d

B), I

IP3

(dBm

), P1

dB (d

Bm)

15

17

19

25

23

21

–10 50

5592 G27

13

20 80 110


GC

P1dB

IIP3

RF = 2350MHz

RF INPUT POWER (dBm/TONE)–12

–80

–60

–40

–20

OUTP

UT P

OWER

(dBm

/TON

E)

–9 –3

5592 G21

–6 0 3 6

20

0

IM5

IFOUT

RF1 = 2349MHzRF2 = 2351MHzLO = 2160MHz

IM3

LTC5592

85592fa


Typical ac perForMance characTerisTics

Conversion Gain and IIP3 vs RF Frequency SSB NF vs RF Frequency Channel Isolation vs RF Frequency




High Side LOVCC = 3.3V, VCCIF = 3.3V, ENA = ENB = High, ISEL = Low, TC = 25°C, PLO = 0dBm, PRF = –3dBm (–3dBm/tone for two-tone IIP3 tests, ∆f = 2MHz), IF = 190MHz, unless otherwise noted. Test circuit shown in Figure 1.





8

6

10

12

IIP3

(dBm

) GC (dB)16

18

20

26

28

24

22

1700 1900

5592 G28

14

6

7

8

10

11

12

15

16

17

14

13

9

1800 2000 2100 23002200

IIP3

GC

–40°C25°C85°C

105°C


G C (d

B), I

IP3

(dBm

)

SSB NF (dB)

–4 0

5592 G31

6

14

12

10

8

20

18

16

22

26

28

24

0

4

2

8

6

12

10

20

18

22

IIP316

14

–2 2 4 6

–40°C25°C85°C

GC

NF


G C (d

B), I

IP3

(dBm

)SSB NF (dB)

–4 0

5592 G32

6

10

8

14

12

16

18

24

26

28

22

20

0

2

4

8

6

12

10

20

18

22

IIP316

14

–2 2 4 6

–40°C25°C85°C

GC

NF


G C (d

B), I

IP3

(dBm

)

SSB NF (dB)

–4 0

5592 G33

6

12

10

8

16

14

18

22

20

26

28

24

0

2

4

8

6

12

10

20

18

22

IIP316

14

–2 2 4 6

–40°C25°C85°C

NF

GC


G C (d

B), I

IP3

(dBm

)

SSB NF (dB)

3.1 3.2

5592 G34

6

8

10

12

16

14

18

26

24

28

22

20

0

2

8

6

4

12

10

18

20

22

IIP316

14

3.3 3.4 3.5 3.6

–40°C25°C85°C

GC

NF

VCC = VCCIFRF = 1950MHz


G C (d

B), I

IP3

(dBm

)SSB NF (dB)

3.5

5592 G35

6

10

8

14

12

16

18

26

24

28

20

22

0

2

6

4

8

12

10

20

18

22

IIP316

14

4 4.5 5 5.5

–40°C25°C85°C

NF

GCVCC = 3.3V

RF = 1950MHz


G C (d

B), I

IP3

(dBm

), P1

dB (d

Bm)

–10

5592 G36

6

8

12

10

14

18

16

26

24

28

20

22IIP3

20 50 80 110


GC

P1dB

RF = 1950MHz


SSB

NF (d

B)

1700 1900

5592 G29

6

7

8

10

11

12

15

16

14

13

9

1800 2000 2100 23002200

–40°C25°C85°C

105°C


ISOL

ATIO

N (d

B)

1700 1900

5592 G30

35

40

50

55

70

65

60

45

1800 2000 2100 23002200

–40°C25°C85°C

LTC5592

95592fa


Typical Dc perForMance characTerisTics

VCC Supply Current vs Supply Voltage (Mixer + LO Amplifier)

VCCIF Supply Current vs Supply Voltage (IF Amplifier)

Total Supply Current vs Temperature (VCC + VCCIF)

VCC Supply Current vs Supply Voltage (Mixer + LO Amplifier)

VCCIF Supply Current vs Supply Voltage (IF Amplifier)

Total Supply Current vs Temperature (VCC + VCCIF)

ISEL = High, ENA = ENB = High, test circuit shown in Figure 1.

ISEL = Low, ENA = ENB = High, test circuit shown in Figure 1.

VCC SUPPLY VOLTAGE (V)3

SUPP

LY C

URRE

NT (m

A)

3.1

5592 G37

190

192

194

198

200

202

204

196

206

3.2 3.3 3.4 3.5 3.6

105°C 85°C

25°C

–40°C

VCCIF = VCC


SUPP

LY C

URRE

NT (m

A)

3.3

5592 G38

130

150

170

190

210

230

250

270

3.6 3.9 4.2 4.5 4.8 5.1 5.4

VCC = 3.3V105°C

85°C

25°C

–40°C


SUPP

LY C

URRE

NT (m

A)

–10

5592 G39

280

300

320

340

360

440

420

400

380

460

480

20 50 80 110

VCC = 3.3V, VCCIF = 5V(DUAL SUPPLY)

VCC = VCCIF = 3.3V(SINGLE SUPPLY)

VCC SUPPLY VOLTAGE (V)3

SUPP

LY C

URRE

NT (m

A)

3.1

5592 G40

124

126

128

130

132

134

136

3.2 3.3 3.4 3.5 3.6

105°C

85°C

25°C

–40°C

VCCIF = VCC


SUPP

LY C

URRE

NT (m

A)

–10

5592 G42

210

250

240

230

220

260

280

270

290

300

20 50 80 110

VCC = 3.3V, VCCIF = 5V(DUAL SUPPLY)

VCC = VCCIF = 3.3V(SINGLE SUPPLY)


SUPP

LY C

URRE

NT (m

A)

3.3

5592 G41

80

110

100

90

130

120

140

160

150

170

3.6 3.9 4.2 4.5 4.8 5.1 5.4

VCC = 3.3V

105°C

85°C

25°C

–40°C

pin FuncTionsRFA, RFB (Pins 1, 6): Single-Ended RF Inputs for Chan-nels A and B. These pins are internally connected to the primary sides of the RF input transformers, which have low DC resistance to ground. Series DC-blocking capaci-tors should be used to avoid damage to the integrated transformer when DC voltage is present at the RF inputs. The RF inputs are impedance matched when the LO input is driven with a 0±6dBm source between 1.5GHz and 2.5GHz and the channels are enabled.

CTA, CTB (Pins 2, 5): RF Transformer Secondary Center-Tap on Channels A and B. These pins may require bypass capacitors to ground to optimize IIP3 performance. Each pin has an internally generated bias voltage of 1.2V and must be DC-isolated from ground and VCC.

GND (Pins 3, 4, 7, 13, 15, 24, Exposed Pad Pin 25): Ground. These pins must be soldered to the RF ground plane on the circuit board. The exposed pad metal of the package provides both electrical contact to ground and good thermal contact to the printed circuit board.

LTC5592

105592fa


pin FuncTionsIFGNDB, IFGNDA (Pins 8, 23): DC Ground Returns for the IF Amplifiers. These pins must be connected to ground to complete the DC current paths for the IF amplifiers. Chip inductors may be used to tune LO-IF and RF-IF leakage. Typical DC current is 101mA for each pin.

IFB+, IFB–, IFA–, IFA+ (Pins 9, 10, 21, 22): Open-Collector Differential Outputs for the IF Amplifiers of Channels B and A. These pins must be connected to a DC supply through impedance matching inductors, or transformer center-taps. Typical DC current consumption is 50.5mA into each pin.

IFBB, IFBA (Pins 11, 20): Bias Adjust Pins for the IF Amplifiers. These pins allow independent adjustment of the internal IF buffer currents for channels B and A, respectively. The typical DC voltage on these pins is 2.2V. If not used, these pins must be DC isolated from ground and VCC.

VCCB and VCCA (Pins 12, 19): Power Supply Pins for the LO Buffers and Bias Circuits. These pins must be con-nected to a regulated 3.3V supply with bypass capacitors located close to the pins. Typical current consumption is 99.5mA per pin.

block DiagraM

5592 BD

BIAS

BIAS

GND

ENA

ISEL

LO

VCCBIFBB

VCCAIFBA

IFB–IFB+

IFA–IFA+

IFGNDB

IFGNDA

GND

RFB

LOAMP

LOAMP

ENB

GND

IFAMP

11109 12

14

13

GND 15

16

17

18

6

87

CTB5

GND4

GND3

CTA2

RFA1

IFAMP

22 21 20 192324

ENB, ENA (Pins 14, 17): Enable Pins. These pins allow Channels B and A, respectively, to be independently en-abled. An applied voltage of greater than 2.5V activates the associated channel while a voltage of less than 0.3V disables the channel. Typical input current is less than 10μA. These pins must not be allowed to float.

LO (Pin 16): Single-Ended Local Oscillator Input. This pin is internally connected to the primary side of the LO input transformer and has a low DC resistance to ground. Series DC-blocking capacitors should be used to avoid damage to the integrated transformer when DC voltage present at LO input. The LO input is internally matched to 50Ω for all states of ENA and ENB.

ISEL (Pin 18): Low Power Select Pin. When this pin is pulled low (

LTC5592

115592fa


TesT circuiT

L1, L2 vs IF FREQUENCIES

IF (MHz) L1, L2 (nH)

140 270

190 150

240 100

300 56

380 33

450 22

REF DES VALUE SIZE VENDOR

C1A, C1B 22pF 0402 AVX

C2 2.2pF 0402 AVX

C3A, C3B C5A, C5B

22pF 0402 AVX

C4, C6 1µF 0603 AVX

C7A, C7B 1000pF 0402 AVX

C8A, C8B 4.7pF 0402 AVX

L1A, L1B L2A, L2B

150nH 0603 Coilcraft

T1A, T1B TC4-1W-7ALN+ Mini-Circuits

Figure 1. Standard Downmixer Test Circuit Schematic (190MHz IF)

RF

GND

GND

BIAS

DC1710AEVALUATION BOARDSTACK-UP(NELCO N4000-13)

0.015”

0.015”

0.062”

4:1T1A

IFA50Ω

C7A

L2AL1A

C5AC6

C3A C4

LTC5592

25GND

1

192021222324

121110987

LO50Ω

17

18

16

15

14

C2

5

6 13

4

3

RFA50Ω

VCCIF3.3V TO 5V

C1A

C8A

RFB50Ω

C1B

2

IFGNDAGND IFA+ IFA– IFBA

LO

GND

GND

ISEL

ENB

ENA

VCCA

IFGNDBGND IFB+ IFB– IFBB VCCB

RFA

CTA

GND

GND

CTB

RFB

5592 TC01

4:1T1B

IFB50Ω

C5B

C3B

C7B

L1BL2B

ISEL(0V/3.3V)

VCC3.3V

ENA(0V/3.3V)

ENB(0V/3.3V)

C8B

LTC5592

125592fa


Introduction

The LTC5592 consists of two identical mixer channels driven by a common LO input signal. Each high linearity mixer consists of a passive double-balanced mixer core, IF buffer amplifier, LO buffer amplifier and bias/enable circuits. See the Pin Functions and Block Diagram sections for a description of each pin. Each of the mixers can be shutdown independently to reduce power consumption and low current mode can be selected that allows a trade-off between performance and power consumption. The RF and LO inputs are single-ended and are internally matched to 50Ω. Low side or high side LO injection can be used. The IF outputs are differential. The evaluation circuit, shown in Figure 1, utilizes bandpass IF output matching and an IF transformer to realize a 50Ω single-ended IF output. The evaluation board layout is shown in Figure 2.

applicaTions inForMaTion

Figure 2. Evaluation Board Layout (DC1710A)

The secondary winding of the RF transformer is inter-nally connected to the channel A passive mixer core. The center-tap of the transformer secondary is connected to Pin 2 (CTA) to allow the connection of bypass capacitor, C8A. The value of C8A can be adjusted to improve channel isolation at specific RF frequencies with minor impact to conversion gain, linearity and noise performance. When used, it should be located within 2mm of Pin 2 for proper high frequency decoupling. The nominal DC voltage on the CTA pin is 1.2V.

For the RF inputs to be properly matched, the appropriate LO signal must be applied to the LO input. A broadband input match is realized with C1A = 22pF. The measured input return loss is shown in Figure 4 for LO frequencies of 1.7GHz, 2.16GHz and 2.5GHz. As shown in Figure 4, the RF input impedance is dependent on LO frequency, although a single value of C1A is adequate to cover the 1.7GHz to 2.5GHz RF band.

RF Inputs

The RF inputs of channels A and B are identical. The RF input of channel A, shown in Figure 3, is connected to the primary winding of an integrated transformer. A 50Ω match is realized when a series external capacitor, C1A, is con-nected to the RF input. C1A is also needed for DC blocking if the source has DC voltage present, since the primary side of the RF transformer is internally DC-grounded. The DC resistance of the primary is approximately 3.9Ω.

Figure 3. Channel A RF Input Schematic

Figure 4. RF Port Return Loss

5592 F02

LTC5592

C1A

C8A

RFA

CTA

RFA

TO CHANNEL A MIXER

1

2

5592 F03

FREQUENCY (MHz)1500

–25

–20

RETU

RN L

OSS

(dB)

–15

–10

0

–5

1700

5592 F04

1900 2100 2300 2500 2700

LO = 1700MHzLO = 2160MHzLO = 2500MHz

LTC5592

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The RF input impedance and input reflection coefficient, versus RF frequency, are listed in Table 1. The reference plane for this data is Pin 1 of the IC, with no external matching, and the LO is driven at 2.16GHz.

Table 1. RF Input Impedance and S11 (at Pin 1, No External Matching, fLO = 2.16GHz)

FREQUENCY (GHz)

RF INPUT IMPEDANCE

S11

MAG ANGLE

1.6 66.0 + j6.8 0.15 20

1.7 62.4 + j0.5 0.11 2

1.8 57.9 – j3.8 0.08 –24

1.9 53.2 – j6.1 0.07 –59

2.0 48.5 – j8.8 0.09 –95

2.1 40.6 – j9.3 0.14 –130

2.2 35.0 – j0.1 0.18 –180

2.3 39.3 + j3.7 0.13 –201

2.4 41.2 + j3.9 0.11 –207

2.5 41.7 + j4.3 0.10 –211

2.6 42.8 + j4.1 0.09 –212

2.7 44.1 + j3.6 0.07 –213


Figure 5. LO Input Schematic

LO Input

The LO input, shown in Figure 5, is connected to the primary winding of an integrated transformer. A 50Ω impedance match is realized at the LO port by adding an external series capacitor, C2. This capacitor is also needed for DC blocking if the LO source has DC voltage present, since the primary side of the LO transformer is DC-grounded internally. The DC resistance of the primary is approximately 1.8Ω.

The secondary of the transformer drives a pair of high speed limiting differential amplifiers for channels A and B. The LTC5592’s LO amplifiers are optimized for the 1.7GHz to 2.5GHz LO frequency range; however, LO frequencies outside this frequency range may be used with degraded performance.

The LO port is always 50Ω matched when VCC is applied, even when one or both of the channels is disabled. This helps to reduce frequency pulling of the LO source when the mixer is switched between different operating states. Figure 6 illustrates the LO port return loss for the different operating modes.

Figure 6. LO Input Return Loss

The nominal LO input level is 0dBm, though the limiting amplifiers will deliver excellent performance over a ±6dBm input power range. Table 2 lists the LO input impedance and input reflection coefficient versus frequency.

Table 2. LO Input Impedance vs Frequency(at Pin 16, No External Matching, ENA = ENB = High)

FREQUENCY (GHz)

INPUT IMPEDANCE

S11

MAG ANGLE

1.7 46.4 + j34.4 0.34 76

1.8 47.0 + j31.0 0.31 78

1.9 46.5 + J28.2 0.28 81

2.0 44.4 + J26.8 0.28 86

2.1 43.1 + j26.0 0.28 89

2.2 41.8 + j26.2 0.29 91

2.3 40.4 + j27.4 0.31 92

2.4 38.8 + j28.5 0.33 94

2.5 38.0 + j30.4 0.35 93

FREQUENCY (MHz)1300 17001500

–30

–20

–25

RETU

RN L

OSS

(dB)

–15

–10

0

–5

5592 F06

1900 2100 2300 2500

BOTH CHANNELS ONONE CHANNEL ONBOTH CHANNELS OFF

LO

TOMIXER B

LTC5592ISEL

5592 F05

18

LO16

17ENA

ENB

C2

14

BIAS

BIAS

TOMIXER A

LTC5592

145592fa


IF Outputs

The IF amplifiers in channels A and B are identical. The IF amplifier for channel A, shown in Figure 7, has differen-tial open collector outputs (IFA+ and IFA–), a DC ground return pin (IFGNDA), and a pin for adjusting the internal bias (IFBA). The IF outputs must be biased at the sup-ply voltage (VCCIFA), which is applied through matching inductors L1A and L2A. Alternatively, the IF outputs can be biased through the center tap of a transformer (T1A). The common node of L1A and L2A can be connected to the center tap of the transformer. Each IF output pin draws approximately 50.5mA of DC supply current (101mA total). An external load resistor, R2A, can be used to improve impedance matching if desired.

IFGNDA (Pin 23) must be grounded or the amplifier will not draw DC current. Inductor L3A may improve LO-IF and RF-IF leakage performance in some applications, but is otherwise not necessary. Inductors should have small resistance for DC. High DC resistance in L3A will reduce the IF amplifier supply current, which will degrade RF performance.

applicaTions inForMaTionFor optimum single-ended performance, the differential IF output must be combined through an external IF transformer or a discrete IF balun circuit. The evaluation board (see Figures 1 and 2) uses a 4:1 IF transformer for impedance transformation and differential to single-ended conversion. It is also possible to eliminate the IF transformer and drive differential filters or amplifiers directly.

The IF output impedance can be modeled as 379Ω in parallel with 2.2pF. The equivalent small-signal model, including bondwire inductance, is shown in Figure 8. Frequency-dependent differential IF output impedance is listed in Table 3. This data is referenced to the package pins (with no external components) and includes the ef-fects of IC and package parasitics.

Figure 7. IF Amplifier Schematic with Bandpass Match

Figure 8. IF Output Small-Signal Model

Bandpass IF Matching

The bandpass IF matching configuration, shown in Figures 1 and 7, is best suited for IF frequencies in the 90MHz to 500MHz range. Resistor R2A may be used to reduce the IF output resistance for greater bandwidth and inductors L1A and L2A resonate with the internal IF output capacitance at the desired IF frequency. The value of L1A, L2A can be estimated as follows:

L1A =L2A = 12πfIF( )2 • 2 •CIF

where CIF is the internal IF capacitance (listed in Table 3).

22 21IFA+ IFA–

0.9nH0.9nHRIF

CIF

LTC5592

5592 F08

4:1T1A IFA

C7AL2AL1A

C5A

R2A

L3A (OR SHORT)VCCIFA

20212223

IFAMP

BIAS

101mA

4mA

IFBA

VCCA

LTC5592IGNDA

IFA–IFA+

R1A(OPTION TO

REDUCEDC POWER)

5592 F07

LTC5592

155592fa


Values of L1A and L2A are tabulated in Figure 1 for vari-ous IF frequencies. The measured IF output return loss for bandpass IF matching is plotted in Figure 9.

Table 3. IF Output Impedance vs Frequency

FREQUENCY (MHz)DIFFERENTIAL OUTPUT

IMPEDANCE (RIF || XIF (CIF))

90 403 || – j610 (2.9pF)

140 384 || – j474 (2.4pF)

190 379 || – j381 (2.2pF)

240 380 || – j316 (2.1pF)

300 377 || – j253 (2.1pF)

380 376 || – j210 (2.0pF)

450 360 || – j177 (2.0pF)


Figure 9. IF Output Return Loss with Bandpass Matchingboard (see Figure 2) has been laid out to accommodate this matching topology with only minor modifications.

IF Amplifier Bias

The IF amplifier delivers excellent performance with VCCIF = 3.3V, which allows a single supply to be used for VCC and VCCIF. At VCCIF = 3.3V, the RF input P1dB of the mixer is limited by the output voltage swing. For higher P1dB, in this case, resistor R2A (Figure 7) can be used to reduce the output impedance and thus the voltage swing, thus improving P1dB. The trade-off for improved P1dB will be lower conversion gain.

With VCCIF increased to 5V the P1dB increases by over 3dB, at the expense of higher power consumption. Mixer P1dB performance at 1950MHz and 2350MHz is tabulated in Table 4 for VCCIF values of 3.3V and 5V. For the highest conversion gain, high-Q wire-wound chip inductors are recommended for L1A and L2A. Low cost multilayer chip inductors may be substituted, with a slight reduction in conversion gain.

Figure 10. IF Output with Lowpass Matching

Figure 11. IF Output Return Loss with Lowpass Matching

Lowpass IF Matching

For IF frequencies below 90MHz, the inductance values become unreasonably high and the lowpass topology shown in Figure 10 is preferred. This topology also can provide improved RF to IF and LO to IF isolation. VCCIFA is supplied through the center tap of the 4:1 transformer. A lowpass impedance transformation is realized by shunt elements R2A and C9A (in parallel with the internal RIF and CIF), and series inductors L1A and L2A. Resistor R2A is used to reduce the IF output resistance for greater bandwidth, or it can be omitted for the highest conver-sion gain. The final impedance transformation to 50Ω is realized by transformer T1A. The measured return loss is shown in Figure 11 for different values of inductance (C9A = open). The case with 82nH inductors and a 1k load resistor (R2A) is also shown. The LTC5592 demo

4:1

T1A IFA50ΩVCCIFA

3.1 TO 5.3V

C5A

2122IFA–IFA+

C6

C9A

R2AL1A L2A

LTC5592

5592 F10

FREQUENCY (MHz)50

–25

–20

RETU

RN L

OSS

(dB)

–15

–10

0

–5

100 300

5592 F09

150 200 250 350 400 450 500

270nH150nH

100nH

56nH

33nH

22nH

RETU

RN L

OSS

(dB)

–20

–25

–15

–10

0

–5

FREQUENCY (MHz)500 100 150

5592 F11

200 250

68nH

100nH

180nH

82nH + 1k

LTC5592

165592fa


applicaTions inForMaTionTable 4. Performance Comparison with VCCIF = 3.3V and 5V (RF = 1950MHz, High Side LO, IF = 190MHz)

VCCIF (V)

R2A (Ω)

ICCIF (mA)

GC (dB)

P1dB (dBm)

IIP3 (dBm)

NF (dB)

3.3 Open 202 8.7 10.6 25.4 9.8

1k 202 7.5 11.3 25.4 9.9

5 Open 209 8.7 14.0 25.5 9.9

(RF = 2350MHz, Low Side LO, IF = 190MHz)

VCCIF (V)

R2A (Ω)

ICCIF (mA)

GC (dB)

P1dB (dBm)

IIP3 (dBm)

NF (dB)

3.3 Open 202 8.3 11.0 27.3 9.8

1k 202 7.1 11.8 27.5 9.8

5 Open 209 8.1 14.6 28.0 10.0

The IFBA pin (Pin 20) is available for reducing the DC current consumption of the IF amplifier, at the expense of IIP3. The nominal DC voltage at Pin 20 is 2.1V, and this pin should be left open-circuited for optimum performance. The internal bias circuit produces a 4mA reference for the IF amplifier, which causes the amplifier to draw approxi-mately 101mA. If resistor R1A is connected to Pin 20 as shown in Figure 7, a portion of the reference current can be shunted to ground, resulting in reduced IF amplifier current. For example, R1A = 1k will shunt away 1.5mA from Pin 20 and the IF amplifier current will be reduced by 25% to approximately 75.5mA. Table 5 summarizes RF performance versus IF amplifier current.

Table 5. Mixer Performance with Reduced IF Amplifier CurrentRF = 1950MHz, High Side LO, IF = 190MHz, VCC = VCCIF = 3.3V

R1

ICCIF (mA)

GC (dB)

IIP3 (dBm)

P1dB (dBm)

NF (dB)

Open 202 8.7 25.4 10.6 9.8

4.7kΩ 184 8.5 25.2 10.8 9.8

2.2kΩ 170 8.4 24.8 10.9 9.7

1kΩ 151 8.1 24.4 11.1 9.8

RF = 2350MHz, Low Side LO, IF = 190MHz, VCC = VCCIF = 3.3V

R1

ICCIF (mA)

GC (dB)

IIP3 (dBm)

P1dB (dBm)

NF (dB)

Open 202 8.3 27.3 11.0 9.8

4.7kΩ 184 8.1 26.8 11.2 9.8

2.2kΩ 170 8.0 26.2 11.2 9.8

1kΩ 151 7.7 25.4 11.3 9.8

Low Power Mode

Both mixer channels can be set to low power mode us-ing the ISEL pin. This allows flexibility to select a reduced current mode of operation when lower RF performance is acceptable, reducing power consumption by 37%. Figure 12 shows a simplified schematic of the ISEL pin interface. When ISEL is set low (2.5V), the DC current in both channels is reduced, thus reducing power consumption. The performance in low power mode and normal power mode are compared in Table 6.

Figure 12. ISEL Interface Schematic

Table 6. Performance Comparison Between Different Power ModesRF = 1950MHz, High Side LO, IF = 190MHz, VCC = VCCIF = 3.3V

ISEL

ITOTAL (mA)

GC (dB)

IIP3 (dBm)

P1dB (dBm)

NF (dB)

Low 401 8.7 25.4 10.6 9.8

High 252 7.4 21.2 10.9 10.2

RF = 2350MHz, Low Side LO, IF = 190MHz, VCC = VCCIF = 3.3V

ISEL

ITOTAL (mA)

GC (dB)

IIP3 (dBm)

P1dB (dBm)

NF (dB)

Low 401 8.3 27.3 11.0 9.8

High 252 7.1 22.3 11.3 10.2

LTC5592

18ISEL

VCCB

500Ω

VCCA

5592 F13

19

BIAS A

BIAS B

LTC5592

175592fa


Enable Interface

Figure 13 shows a simplified schematic of the ENA pin interface (ENB is identical). To enable channel A, the ENA voltage must be greater than 2.5V. If the enable function is not required, the enable pin can be connected directly to VCC. The voltage at the enable pin should never exceed the power supply voltage (VCC) by more than 0.3V. If this should occur, the supply current could be sourced through the ESD diode, potentially damaging the IC.


The Enable pins must be pulled high or low. If left float-ing, the on/off state of the IC will be indeterminate. If a three-state condition can exist at the enable pins, then a pull-up or pull-down resistor must be used.

Supply Voltage Ramping

Fast ramping of the supply voltage can cause a current glitch in the internal ESD protection circuits. Depending on the supply inductance, this could result in a supply volt-age transient that exceeds the maximum rating. A supply voltage ramp time of greater than 1ms is recommended.

Spurious Output Levels

Mixer spurious output levels versus harmonics of the RF and LO are tabulated in Tables 7 and 8 for frequencies up to 10GHz. The spur levels were measured on a standard evalution board using the test circuit shown in Figure 1. The spur frequencies can be calculated using the follow-ing equation:

fSPUR = (M • fRF) – (N • fLO)

Table 7. IF Output Spur Levels (dBc), High Side LO(RF = 1950MHz, PRF = –3dBm, PLO = 0dBm, VCC = VCCIF = 3.3V, TC = 25°C)

N

M

0 1 2 3 4 5 6 7 8 90 – –45.2 –46.9 –68.4 –70.8 –75.3 –72.0 –82.01 –51.0 0 –64.4 –54.5 –68.1 –66.3 –74.9 –72.22 –80.0 –80.9 –60.6 * –81.4 * * * *3 * –83.5 * –75.8 * * * * * *4 * * * * * * * * * *5 * * * * * * * * * *6 * * * * * * * * * *7 * * * * * * * * * *8 * * * * * * * * *9 * * * * * * * *

10 * * * * * * **Less than –90dBc

Table 8. IF Output Spur Levels (dBc), Low Side LO(RF = 2350MHz, PRF = –3dBm, PLO = 0dBm, VCC = VCCIF = 3.3V, TC = 25°C)

N

M

0 1 2 3 4 5 6 7 8 90 – –44.9 –46.2 –69.9 –69.7 –78.0 –71.91 –50.7 0 –63.1 –45.7 –67.0 –68.9 –71.1 –72.2 *2 –77.8 –78.7 –66.5 * –89.1 * * * * *3 * * * –70.1 * * * * * *4 * * * * * * * * * *5 * * * * * * * * * *6 * * * * * * * * * *7 * * * * * * * * *8 * * * * * * * *9 * * * * * * *

10 * * * * * **Less than –90dBc

Figure 13. ENA Interface Schematic

LTC5592

17ENA 500Ω

VCCA

5592 F13

19

ESDCLAMP

LTC5592

185592fa


UH Package24-Lead Plastic QFN (5mm × 5mm)

(Reference LTC DWG # 05-08-1747 Rev A)

5.00 ± 0.10

5.00 ± 0.10

NOTE:1. DRAWING IS NOT A JEDEC PACKAGE OUTLINE2. DRAWING NOT TO SCALE3. ALL DIMENSIONS ARE IN MILLIMETERS4. DIMENSIONS OF EXPOSED PAD ON BOTTOM OF PACKAGE DO NOT INCLUDE MOLD FLASH. MOLD FLASH, IF PRESENT, SHALL NOT EXCEED 0.20mm ON ANY SIDE5. EXPOSED PAD SHALL BE SOLDER PLATED6. SHADED AREA IS ONLY A REFERENCE FOR PIN 1 LOCATION ON THE TOP AND BOTTOM OF PACKAGE

PIN 1TOP MARK(NOTE 6)

0.55 ± 0.10

23

1

2

24

BOTTOM VIEW—EXPOSED PAD

3.25 REF3.20 ± 0.10

3.20 ± 0.10

0.75 ± 0.05 R = 0.150TYP

0.30 ± 0.05(UH24) QFN 0708 REV A

0.65 BSC

0.200 REF

0.00 – 0.05

0.75 ±0.05

3.25 REF

3.90 ±0.055.40 ±0.05

0.30 ± 0.05

PACKAGE OUTLINE

0.65 BSC

RECOMMENDED SOLDER PAD LAYOUTAPPLY SOLDER MASK TO AREAS THAT ARE NOT SOLDERED

PIN 1 NOTCHR = 0.30 TYPOR 0.35 × 45°

CHAMFERR = 0.05

TYP

3.20 ± 0.05

3.20 ± 0.05

UH Package24-Lead Plastic QFN (5mm × 5mm)

(Reference LTC DWG # 05-08-1747 Rev A)

package DescripTionPlease refer to http://www.linear.com/designtools/packaging/ for the most recent package drawings.

http://www.linear.com/designtools/packaging/

LTC5592

195592fa


Information furnished by Linear Technology Corporation is believed to be accurate and reliable. However, no responsibility is assumed for its use. Linear Technology Corporation makes no representa-tion that the interconnection of its circuits as described herein will not infringe on existing patent rights.

REV DATE DESCRIPTION PAGE NUMBER

A 08/13 Changed LO lower frequency range from 1.7GHz to 1.5GHz.LO Input Frequency Range: changed lower frequency from 1700MHz to 1500MHz.RF Input Frequency Range, Low Side LO: changed lower frequency from 1900MHz to 1600MHz.Updated “Conversion Gain and IIP3 vs RF Frequency” and “SSB NF vs RF Frequency” plots to include 1500MHz frequency characteristics.Updated “LO Leakage vs LO Frequency” plot to include 1500MHz frequency characteristics.Updated “Conversion Gain and IIP3 vs RF Frequency” and “SSB NF vs RF Frequency” plots to include 1500MHz frequency characteristics.Pin Functions section RFA, RFB (Pins 1, 6): Changed LO input source lower frequency from 1.7GHz to 1.5GHz.Right column, last paragraph. Deleted sentence: “These LO frequencies correspond to lower, middle and upper values in the LO range.”Figure 6, updated the LO Input Return Loss plot to include 1300MHz frequency characteristics.

1335

67

912

13

revision hisTory

LTC5592

205592fa

For more information www.linear.com/LTC5592 LINEAR TECHNOLOGY CORPORATION 2011

LT 0813 REV A • PRINTED IN USALinear Technology Corporation1630 McCarthy Blvd., Milpitas, CA 95035-7417(408) 432-1900 ● FAX: (408) 434-0507 ● www.linear.com/LTC5592

relaTeD parTs

Typical applicaTionDownconverting Mixer with 470MHz IF

PART NUMBER DESCRIPTION COMMENTSInfrastructureLTC5569 300MHz to 4GHz, 3.3V Dual Active

Downconverting Mixer2dB Gain, 26.7dBm IIP3 and 11.7dB NF at 1950MHz, 3.3V/180mA Supply

LT5557 400MHz to 3.8GHz, 3.3V Downconverting Mixer 2.9dB Gain, 24.7dBm IIP3 and 11.7dB NF at 1950MHz, 3.3V/82mA SupplyLTC6416 2GHz 16-Bit ADC Buffer 40.25dBm OIP3 to 300MHz, Programmable Fast Recovery Output ClampingLTC6412 31dB Linear Analog VGA 35dBm OIP3 at 240MHz, Continuous Gain Range –14dB to 17dBLTC554x 600MHz to 4GHz Downconverting Mixer Family 8dB Gain, >25dBm IIP3, 10dB NF, 3.3V/200mA SupplyLT5554 Ultralow Distort IF Digital VGA 48dBm OIP3 at 200MHz, 2dB to 18dB Gain Range, 0.125dB Gain StepsLT5578 400MHz to 2.7GHz Upconverting Mixer 27dBm OIP3 at 900MHz, 24.2dBm at 1.95GHz, Integrated RF TransformerLT5579 1.5GHz to 3.8GHz Upconverting Mixer 27.3dBm OIP3 at 2.14GHz, NF = 9.9dB, 3.3V Supply, Single-Ended LO and RF PortsRF Power DetectorsLT5581 6GHz Low Power RMS Detector 40dB Dynamic Range, ±1dB Accuracy Over Temperature, 1.5mA Supply CurrentLTC5582 10GHz RMS Power Detector 40MHz to 10GHz, Up to 57dB Dynamic Range, ±0.5dB Accuracy Over TemperatureLTC5583 Dual 6GHz RMS Power Detector 40MHz to 6GHz, Up to 60dB Dynamic Range, >40dB Channel-to-Channel IsolationADCsLTC2285 14-Bit, 125Msps Dual ADC 72.4dB SNR, >88dB SFDR, 790mW Power ConsumptionLTC2185 16-Bit, 125Msps Dual ADC Ultralow Power 74.8dB SNR, 185mW/Channel Power ConsumptionLTC2242-12 12-Bit, 250Msps ADC 65.4dB SNR, 78dB SFDR, 740mW Power Consumption

Conversion Gain, NF and IIP3 vs RF Frequency


7

8

9

G C (d

B), S

SB N

F (d

B)

IIP3 (dBm)

11

12

13

14

2200 2400

5592 TA02b

10

2300 2500 2600 2700

23

25

27

29

24

26

28

22

21

TA = 25°CIF = 470MHzLOW SIDE LO

NF

IIP3

GC

4:1TC4-1W-17LN+

IFA50Ω

82nH 82nH

22pF

1nF

1µF

22pF 1µF

LTC5592CHANNEL A

CHANNEL B NOT SHOWN

1

192021222324

LO50Ω

17

18

16

15

2.2pF

4

3

RFA50Ω

VCCIF3.3V

VCC3.3V

TOCHANNEL B

TOCHANNEL B22pF

2

IFGNDAGND IFA+ IFA– IFBA

LO

GND

ISEL

ENA

VCCARFA

CTA

GND

GND

5590 TA02

ISEL

ENA

4.7pF

http://www.linear.com/LTC5569http://www.linear.com/LT5557http://www.linear.com/LTC6416http://www.linear.com/LTC6412http://www.linear.com/LTC5541http://www.linear.com/LT5554http://www.linear.com/LT5578http://www.linear.com/LT5579http://www.linear.com/LT5581http://www.linear.com/LTC5582http://www.linear.com/LTC5583http://www.linear.com/LTC2285http://www.linear.com/LTC2185http://www.linear.com/LTC2242-12

FeaturesApplicationsDescriptionTypical Application Absolute Maximum RatingsPin ConfigurationOrder InformationDC Electrical CharacteristicsAC Electrical CharacteristicsTypical AC Performance CharacteristicsTypical DC Performance CharacteristicsPin FunctionsBlock DiagramTest CircuitApplications InformationPackage DescriptionRevision HistoryTypical ApplicationRelated Parts

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