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Low Power Transforming Mobile PC Industry

Samsung Semiconductor IncIntel IDF, Sept 13, 2011

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1

10

1,000

100

10,000

100,000

1960 1970 1980 1990 2000 2010 2020

1M+ Units

10M+ Units

100M+

Units

1B+

Units

>10B

Units

Mainframe

Minicomputer

PC

Wired

Internet

Mobile

Internet

Computing Growth Drivers Over TimeUnits, M

Increasing IntegrationStand-Alone Wired Seamless/Cloud

Back-end Infrastructure:

Cloud Computing

Mobile Internet will be 10x Desktop Internet

Source: Morgan Stanley

CE Devices:

Beyond Phones

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We‟re Going Mobile!

291

464

2010 2011 2012 2013 2014 2015

In 2011, Smartphone shipments are expected to overtake PC shipments

Fast-growing Smartphone market vs. Sluggish PC market

This gap will continue to widen over time

With the inclusion of Tablets, Mobile shipments nearly Double that of PCs, by 2015!

Source: Market Estimates,

Samsung Marketing, 3Q11

Market Forecast

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What Users want

User Experience is driving new paradigm

Always On Instant ON

Always Connected

Mobility

TM

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UltrabookTM

Samsung Welcomes Intel’s Vision for Notebook Paradigm Shift

PC Mobile transition as “thin and light” becomes mainstream

Product Transitions to Enable Optimized Ultrabook

Response Time and Battery Life are key performance factors

Main Memory: DDR3/4 LPDDR3 (Lower Standby Current)

Storage: HDD NAND Based Storage

Industry focusing towards a Mobile-Centric Eco-System

Next Steps: How to Roll out to OEMs / Eco-System Collaboration (OS)

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Ultrabook: How to get there

Commodity, Bulky, Heavy

Optimal Ultrabook User Experience Different components

Performance Longer Battery LifeThin & Light

Low Power, Small, Thin & Light, Customized

x64

x64

Thin - Wide Battery

Solder Down DRAM

SSDThin Fan

Ultrabook („13)Conventional Notebook („11)

x64

x64

HDDThick

BatteryFan

SODIMM

ODD

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Ultrabook: Time to Change!

Cannot offer a new user experience by applying old PC mindset

Challenges- LPDDR3 soldered down on Motherboard (No Module flexibility)

- LPDDR3+SSD price vs DDR3+HDD

• Lack of a module CTO “Good, Better Best”Less end user flexibility

• SSD: Standardize thin form factors

Market Dynamics- Achieves “Always On”, “Always Connected”, several weeks standby

- High Desirability: Cool & Sleek products

• High Value mobile products are not as price sensitive

• > $1,000 US PC grew by 27% in 2011; vs. overall US PC market grew by single digit %

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Memory devices for Ultrabook

Memory Properties required by new transition

Thickness

Battery

40-50mm20-30mm

<10mm13-17mm

Storage HDD SSD Small F/F SSD

MemoryOn boardModule

3 hr5-6 hr

8-9 hr >12 hr

(1 or 2 chip)On board

Mobility Thin/LightSolder-down

orSmall F/F

Always-onAlways-connected

Instant-on

Low PowerFast Responsiveness

Mobile DRAMFlash Storage

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Memory solutions for Ultrabook

Samsung is investigating memory configurations for Ultrabook

• 4Gb would be a best-fit in „12~‟13 timeframe in capacity, power consumption, smaller board area, price, etc.

‟11 ‟12 & beyond System config.

Mobile DRAM

2GB

4GB

8GB

EDP DRAM

2GB

4GB

8GB

x32

4Gb x324Gb DDP based 8Gb x64 Comp. 2ea

4Gb QDP based 16Gb x64 Comp. 2ea

x32

8Gb x328Gb DDP based 16Gb x64 Comp. 2ea

x32x32

x324Gb x32

2Gb Comp.8ea

4Gb QDP based 16Gb x32 Comp. 4eax32

x32x32

4Gb x168Gb QDP based 32Gb x64 Comp. 2ea

x328Gb x32x32

8Gb x32

2Gb x8

4Gb x84Gb Comp.8ea

4Gb x164Gb x16

4Gb Comp.16ea

4Gb x16

4Gb x16

4Gb x164Gb

4Gb x8

4Gb x164Gb x16

4Gb x164Gb

4Gb Comp.4ea

4Gb DDP based8Gb x32 Comp. 4ea

4Gb Comp.8ea

4Gb DDP based 8Gb x16Comp. 4ea

4Gb DDP based8Gb x32 Comp. 8ea

4Gb DDP based 8Gb x16Comp. 8ea

CPU

x64 x64

CS0 CS1 CS2 CS3

128bit System2ch x64

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LPDDR2 LPDDR3 DDR3L

Performance

Speed 1066Mbps 1600Mbps 1600Mbps ~

B/W 8.5GB/s 12.8GB/s 12.8GB/s ~

PowerConsumption

Sleep(mW) 1.0X 1.0X 8.8X

Operating(mW) 1.0X 1.5X1.8X*

(ODT power not included)

PKG Type Discrete/POP/eMCP Discrete Discrete/POP/eMCP Discrete Discrete

Power Comparison - LP3/LP2 vs. DDR3L

Condition for Power Consumption :• Current : Real measurement value@DDR3L&LPDDR2 , DDR3L ODT off case, prediction value@LPDDR3• Power : 2GB (16Gb QDP) composition, 2chip(operating)/2chip(IDD2P), Channel efficiency 100% assumption @LPDDR2/3

2GB(4Gb 4pcs) composition, 4chip(operating), Channel efficiency 100% assumption, ODT Off case @DDR3L

• Temperature : Room temp.

LPDDRx can be an attractive memory solution for low power appl.

• LPDDRx can provide power reduction with reasonable performance

8.8X

1.2X

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Conventional PC vs. on-board Mobile & Ultrabook

Conventional PC On-board

Simple Verification

Ref. Board + Module

Easy Going Test

Board & Component Feasibility Check

PKG size, SI condition change

Key differences

• “Replaceability” / PKG configuration / SI condition

Considerations for on-board implementation

Module Case (As is) On-board case (To be)

• Upgradable for adopted module• Expandable for empty socket Flexibility • No room for upgrade and extension

• Easy change of module with socket• Small Q‟ty boards can cover Validation

Validation

• Strict restriction for comp change from board• Many boards requirement for validation

• Easy regression test using current board by replacing module

Technology migration

• Need to consider changes in SI/PI characteristics

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0%

20%

40%

60%

80%

100%

2011 2012 2013 2014 2015

LPDDRx, penetrate into notebook market

LPDDR3 adoption planned in Mobile & Ultra Thin from „13

DRAM technology transition

Source: SEC Marketing 2Q’11, ULT portion estimation by Intel

Intel RHT

Server

Desktop

Notebook

Ultra Thin(ULT)

Tablet

S. Phone

DR

AM

Po

rtio

n b

y S

eg

me

nt

ULT (<12.7mm)-On-Board-LPDDR3/DDR3L-Instant-On- Low power

LPDDRx

DDR3/4

LP/DDR3

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Low Power DRAM Long Term

’10 ’11 2012 & beyond

Mobile DRAM

InterfaceVDD/VDDQ

Speed*1

Density

PKG*2

LPDDR2 1.2V/1.2V LPDDR3 1.2V/1.2V

2Gb 4Gb 8Gb

Up to 4 die stacks : 1.0 mm 0.9mm and below

6.4GB/s 8.5GB/s 12.8GB/s

Post-LPDDR3

25.6GB/s+

Samsung develops Low Power DRAM solution for ULT platform

• ‘12, LPDDR3(12.8GB/s, 1.2V) ‘14, LPDDR4(25.6GB/s+, ~1.2V)

• 4GB package solution available from ‘13 with 8Gb mono die

1. Based on 2-Ch(x64) configuration2. Assume maximum 4-die stacks in one package

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Interface: Move to PCIe for Highest throughput & lowest latency

Form Factor: Get smaller and thinner, with even higher capacity

NAND: 2xnm 2ynm 1xnm Tech. for wider SSD adoption

Items 2011 2012 2013 2014 2015

OS

Interface

Form Factor

SSD trend for Ultrabook

2.5” 7mmT

mSATA 3.8mmT

eSSD1.4mmT

SATA 2.6(SATA 3Gb/s)

SATA 3.0 (SATA 6Gb/s)

NVMe(PCIe 3.0 8.0Gb/s)

NewULT FF

<3mmT(Single)

Form Factor Conversed

SATAe(PCIe 3.0 8.0Gb/s)

Windows8 Windows9Windows7

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SSD form factor solution

Samsung looking to providing Small Form Factor solution in 2012

Target MarketPlatform

ThicknessForm Factor CTRL NAND

Performance HaloHigh perf. Content-creation PC

<25mm• 2.5” • mSATA• ULT FF • 2~8ch/8way

• DRAM*

• AES engine

• SLP <10mW(@DEVSLP)

• 2ynm/1xnm Tech

• 400Mbps

• Ext. Vpp 12V

Ultra Thin Thin & lightLong battery lifeOn the go PC

<18mm (2012)<12mm (2013)

• mSATA• ULT FF• eSSD

Thin BasicCost effective high value platform for basic usages

<25mm

• 2.5”• mSATA• ULT FF• eSSD

New

New

New

* eSSD DRAM is optional