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VISHAYTLHG / O / P / R / Y420.
Document Number 83005
Rev. 1.3, 31-Aug-04
Vishay Semiconductors
www.vishay.com
1
e3 PbPb-free
19220
High Efficiency LED, ∅ 3 mm Tinted Undiffused Package
DescriptionThe TLH.42.. series was developed for standardapplications like general indicating and lighting pur-poses.
It is housed in a 3 mm tinted clear plastic package.The wide viewing angle of these devices provides ahigh on-off contrast.
Several selection types with different luminous inten-sities are offered. All LEDs are categorized in lumi-nous intensity groups. The green and yellow LEDsare categorized additionally in wavelength groups.
That allows users to assemble LEDs with uniformappearance.
Features
Choice of five bright colors
• Standard T-1 package
• Small mechanical tolerances
• Suitable for DC and high peak current
• Wide viewing angle
• Luminous intensity categorized
• Yellow and green color categorized
• Lead-free device
Applications
Status lights
OFF / ON indicator
Background illumination
Readout lights
Maintenance lights
Legend light
Parts Table
Part Color, Luminous Intensity Angle of Half Intensity (±ϕ) Technology
TLHR4200 Red, IV > 4 mcd 22 ° GaAsP on GaP
TLHR4201 Red, IV > 6.3 mcd 22 ° GaAsP on GaP
TLHR4205 Red, IV > 10 mcd 22 ° GaAsP on GaP
TLHO4200 Soft orange, IV > 4 mcd 22 ° GaAsP on GaP
TLHO4201 Soft orange, IV > 10 mcd 22 ° GaAsP on GaP
TLHY4200 Yellow, IV > 4 mcd 22 ° GaAsP on GaP
TLHY4201 Yellow, IV > 6.3 mcd 22 ° GaAsP on GaP
TLHY4205 Yellow, IV > 10 mcd 22 ° GaAsP on GaP
TLHG4200 Green, IV > 6.3 mcd 22 ° GaP on GaP
TLHG4201 Green, IV > 10 mcd 22 ° GaP on GaP
TLHG4205 Green, IV > 16 mcd 22 ° GaP on GaP
TLHP4200 Pure green, IV > 2.5 mcd 22 ° GaP on GaP
TLHP4201 Pure green, IV > 6.3 mcd 22 ° GaP on GaP
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2
Document Number 83005
Rev. 1.3, 31-Aug-04
VISHAYTLHG / O / P / R / Y420.Vishay Semiconductors
Absolute Maximum RatingsTamb = 25 °C, unless otherwise specified
TLHR42.. ,TLHO42.. , TLHY42.. , TLHG42.. , TLHP42..
Optical and Electrical CharacteristicsTamb = 25 °C, unless otherwise specified
RedTLHR42..
1) in one Packing Unit IVmin /IVmax ≤ 0.5
Soft OrangeTLHO42..
1) in one Packing Unit IVmin /IVmax ≤ 0.5
Parameter Test condition Symbol Value Unit
Reverse voltage VR 6 V
DC Forward current IF 30 mA
Surge forward current tp ≤ 10 µs IFSM 1 A
Power dissipation Tamb ≤ 60 °C PV 100 mW
Junction temperature T j 100 °C
Operating temperature range Tamb - 40 to + 100 °C
Storage temperature range Tstg - 55 to + 100 °C
Soldering temperature t ≤ 5 s, 2 mm from body Tsd 260 °C
Thermal resistance junction/
ambient
RthJA 400 K/W
Parameter Test condition Part Symbol Min Typ. Max Unit
Luminous intensity 1) IF = 10 mA TLHR4200 IV 4 8 mcd
TLHR4201 IV 6.3 10 mcd
TLHR4205 IV 10 15 mcd
Dominant wavelength IF = 10 mA λ d 612 625 nm
Peak wavelength IF = 10 mA λ p 635 nm
Angle of half intensity IF = 10 mA ϕ ± 22 degForward voltage IF = 20 mA VF 2 3 V
Reverse voltage IR = 10 µA VR 6 15 V
Junction capacitance VR = 0, f = 1 MHz C j 50 pF
Parameter Test condition Part Symbol Min Typ. Max Unit
Luminous intensity 1) IF = 10 mA TLHO4200 IV 4 10 mcd
TLHO4201 IV 10 18 mcd
Dominant wavelength IF = 10 mA λ d 598 611 nm
Peak wavelength IF = 10 mA λ p 605 nm
Angle of half intensity IF = 10 mA ϕ ± 22 deg
Forward voltage IF = 20 mA VF 2.4 3 V
Reverse current VR = 6 V IR 10 µA
Junction capacitance VR = 0, f = 1 MHz C j 50 pF
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VISHAYTLHG / O / P / R / Y420.
Document Number 83005
Rev. 1.3, 31-Aug-04
Vishay Semiconductors
www.vishay.com
3
YellowTLHY42..
1) in one Packing Unit IVmin /IVmax ≤ 0.5
GreenTLHG42..
1) in one Packing Unit IVmin /IVmax ≤ 0.5
Pure greenTLHP42..
1) in one Packing Unit IVmin /IVmax ≤ 0.5
Parameter Test condition Part Symbol Min Typ. Max Unit
Luminous intensity 1) IF = 10 mA TLHY4200 IV 4 10 mcd
TLHY4201 IV 6.3 15 mcdTLHY4205 IV 10 20 mcd
Dominant wavelength IF = 10 mA λ d 581 594 nm
Peak wavelength IF = 10 mA λ p 585 nm
Angle of half intensity IF = 10 mA ϕ ± 22 deg
Forward voltage IF = 20 mA VF 2.4 3 V
Reverse voltage IR = 10 µA VR 6 15 V
Junction capacitance VR = 0, f = 1 MHz C j 50 pF
Parameter Test condition Part Symbol Min Typ. Max Unit
Luminous intensity 1) IF = 10 mA TLHG4200 IV 6.3 10 mcd
TLHG4201 IV 10 15 mcd
TLHG4205 IV 16 20 mcd
Dominant wavelength IF = 10 mA λ d 562 575 nm
Peak wavelength IF = 10 mA λ p 565 nm
Angle of half intensity IF = 10 mA ϕ ± 22 deg
Forward voltage IF = 20 mA VF 2.4 3 V
Reverse voltage IR = 10 µA VR 6 15 V
Junction capacitance VR = 0, f = 1 MHz C j 50 pF
Parameter Test condition Part Symbol Min Typ. Max Unit
Luminous intensity 1) IF = 10 mA TLHP4200 IV 2.5 7 mcd
TLHP4201 IV 6.3 20 mcd
Dominant wavelength IF = 10 mA λ d 555 565 nm
Peak wavelength IF = 10 mA λ p 555 nm
Angle of half intensity IF = 10 mA ϕ ± 22 deg
Forward voltage IF
= 20 mA VF
2.4 3 V
Reverse voltage IR = 10 µA VR 6 15 V
Junction capacitance VR = 0, f = 1 MHz C j 50 pF
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4
Document Number 83005
Rev. 1.3, 31-Aug-04
VISHAYTLHG / O / P / R / Y420.Vishay Semiconductors
Typical Characteristics (Tamb = 25 °C unless otherwise specified)
Figure 1. Power Dissipation vs. Ambient Temperature
Figure 2. Forward Current vs. Ambient Temperature for InGaN
Figure 3. Forward Current vs. Pulse Length
1008060400
25
50
75
100
125
P
- P o w e r D i s s i p a t i o n ( m W
)
V
Tamb - Ambient Temperature ( °C )9510904
200
0
10
20
30
40
60
I
- F o r w a r d C u r r e n t ( m A )
F
95 10905
50
Tamb - Ambient Temperature ( °C )
100806040200
0.020.05
0.10.2
1
0.5
ıt p /T= 0.01
Tamb 65 °C≤
0.01 0.1 1 10
1
10
100
1000
10000
t p - Pulse Length ( ms )
100
95 10047
I
- F o r w a r d C
u r r e n t ( m A )
F
Figure 4. Rel. Luminous Intensity vs. Angular Displacement
Figure 5. Forward Current vs. Forward Voltage
Figure 6. Rel. Luminous Intensity vs. Ambient Temperature
0.4 0.2 0 0.2 0.4 0.6
95 10041
0.6
0.9
0.8
0 °°°
30°
10 20
40°
50°
60°
70°
80°
0.7
1.0
I
- R e l a t i v e L u m i n o u s I n t e n s i t y
V r e l
Red
t p /T = 0.001
t p = 10 µs
0.1
1
10
100
1000
95 10026 VF - Forward Voltage ( V )
I
- F o r w a r d C u r r e n t ( m A )
F
1086420
0
0
0.4
0.8
1.2
1.6
95 10027
20 40 60 80 100
I
- R e l a t i v e
L u m i n o u s I n t e n s i t y
v r e l
Tamb - Ambient Temperature ( °C )
IF = 10 mA
Red
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VISHAYTLHG / O / P / R / Y420.
Document Number 83005
Rev. 1.3, 31-Aug-04
Vishay Semiconductors
www.vishay.com
5
Figure 7. Rel. Lumin. Intensity vs. Forw. Current/Duty Cycle
Figure 8. Relative Luminous Intensity vs. Forward Current
Figure 9. Relative Intensity vs. Wavelength
10 20 50 100 2000
0.4
0.8
1.2
1.6
2.4
95 10321
500
0.5 0.2 0.1 0.05 0.021
IF (mA)
tp/T
2.0
Red
I
- R e l a t i v e L u m i n o u s I n t e n s i t y
V r e l
0.01
0.1
1
10
IF - Forward Current ( mA )
10010
95 10029
I
- R e l a t i v e L u m i n o u s I n t e n s i t y
v r e l
Red
1
590 610 630 650 670
0
0.2
0.4
0.6
0.8
1.2
690
95 10040 ıλ - Wavelength ( nm )
1.0
Red
I
- R e l a t i v e L u m i n o u s I n t e n s i t y
V r e l
Figure 10. Forward Current vs. Forward Voltage
Figure 11. Rel. Luminous Intensity vs. Ambient Temperature
Figure 12. Rel. Lumin. Intensity vs. Forw. Current/Duty Cycle
0.1
1
10
100
95 9990
I
- F o r w a r d C u r r e n t ( m A )
F
Soft Orange
VF - Forward Voltage ( V )
543210
95 9994
Soft Orange
0
0.4
0.8
1.2
1.6
2.0
100
I
- R e l a t i v e L u m i n o u s I n t e n s i t y
v r e l
Tamb - Ambient Temperature (°C )0 20 40 60 80
95 10259
SoftOrange
10 20 50 100 2000
0.4
0.8
1.2
1.6
2.4
500
0.5 0.2 0.1 0.05 0.021
IF (mA)
tp /T
2.0
I
- R e l a t i v e L u m i n o u s I n t e n s i t y
V r e l
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6
Document Number 83005
Rev. 1.3, 31-Aug-04
VISHAYTLHG / O / P / R / Y420.Vishay Semiconductors
Figure 13. Relative Luminous Intensity vs. Forward Current
Figure 14. Relative Intensity vs. Wavelength
Figure 15. Forward Current vs. Forward Voltage
0.01
0.1
1
10 1001
10
IF - Forward Current ( mA )95 9997
I
- R e l a t i v e L u m i n
o u s I n t e n s i t y
v r e l
Soft Orange
95 10324
Soft Orange
570 590 610 630 650
0
0.2
0.4
0.6
0.8
1.2
670
λ - Wavelength ( nm )
1.0
I
- R e l a t i v e L u m i n o u s I n t e n s i t y
V r e l
0.1
1
10
100
1000
1086420
95 10030 VF - Forward Voltage ( V )
I
- F o
r w a r d C u r r e n t ( m A )
F
Yellow
t p /T = 0.001t p = 10 µs
Figure 16. Rel. Luminous Intensity vs. Ambient Temperature
Figure 17. Rel. Lumin. Intensity vs. Forw. Current/Duty Cycle
Figure 18. Relative Luminous Intensity vs. Forward Current
0
0
0.4
0.8
1.2
1.6
95 10031
20 40 60 80 100
I
- R e l a t i v e L u m i n o
u s I n t e n s i t y
v r e l
Tamb - Ambient Temperature ( °C )
Yellow
IF = 10 mA
Yellow
10 20 50 100 200
0
0.4
0.8
1.2
1.6
2.4
95 10260
500
0.5 0.2 0.1 0.05 0.021
IF
(mA)
tp/T
I
- R e l a t i v e L u m i n o u s I n t e n s i t y
v r e l
2.0
Yellow
IF - Forward Current ( mA )
100
0.1
1
10
95 10033
I
- R e l a
t i v e L u m i n o u s I n t e n s i t y
v r e l
1010.01
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VISHAYTLHG / O / P / R / Y420.
Document Number 83005
Rev. 1.3, 31-Aug-04
Vishay Semiconductors
www.vishay.com
7
Figure 19. Relative Intensity vs. Wavelength
Figure 20. Forward Current vs. Forward Voltage
Figure 21. Rel. Luminous Intensity vs. Ambient Temperature
550 570 590 610 630
0
0.2
0.4
0.6
0.8
1.2
650
95 10039 λ -- Wavelength ( nm )
1.0Yellow
I
- R e l a t i v e L u m i n o u
s I n t e n s i t y
V r e l
0.1
1
10
100
1000
108642095 10034 VF - Forward Voltage ( V )
I
- F o r w a r d C u r r e n t ( m A )
F
Green
t p /T = 0.001t p = 10 µs
0
0.4
0.8
1.2
1.6
95 10035
I
- R e l a t i v e L u m i n o u s I n t e n s i t y
v r e l
Green
I F = 10 mA
Tamb- Ambient Temperature ( °C )
20 40 60 800 100
Figure 22. Specific Luminous Intensity vs. Forward Current
Figure 23. Relative Luminous Intensity vs. Forward Current
Figure 24. Relative Intensity vs. Wavelength
10 20 50 100 200
0
0.4
0.8
1.2
1.6
2.4
95 10263
500
v r e l
2.0Green
I
- S p e c i f i c L u m i n o u
s I n t e n s i t y
IF(mA)
0.5 0.2 0.1 0.05 0.021 tp/T
IF - Forward Current ( mA )
100
Green
0.1
1
10
95 10037
I
- R e l a t i v e L u m i n o u s I n t e n s i t y
v r e l
101
520 540 560 580 600
0
0.2
0.4
0.6
0.8
1.2
620
95 10038 λ -- Wavelength ( nm )
1.0Green
I
- R e l a t i v e L u m i n o u s I n t e n s i t y
V r e l
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8
Document Number 83005
Rev. 1.3, 31-Aug-04
VISHAYTLHG / O / P / R / Y420.Vishay Semiconductors
Figure 25. Forward Current vs. Forward Voltage
Figure 26. Rel. Luminous Intensity vs. Ambient Temperature
Figure 27. Specific Luminous Intensity vs. Forward Current
0 1 2 3 4
0.1
1
10
100
5
95 9988
Pure Green
F I
–
F o r w a r d C u r r e n t ( m A )
VF – Forward Voltage ( V )
0
0.4
0.8
1.2
1.6
2.0
95 9991
Pure Green
I
- R e l a t i v e L u m i n o u s I n t e n s i t y
V r e l
Tamb − Ambient Temperature ( °C )
0 10080604020
95 10261
10 1000100
0
0.4
0.8
1.2
1.6
2.4
2.0Pure Green
I
- S p
e c i f i c
L u n i n o u s
F l u x
S p e c
IF - Forward Current ( mA )
Figure 28. Relative Luminous Intensity vs. Forward Current
Figure 29. Relative Intensity vs. Wavelength
0.01
0.1
1
10
100101
95 9998
Pure Green
I
- R e l a t i v e L u m i n o u
s I n t e n s i t y
V r e l
IF - Forward Current ( mA )
500 520 540 560 580
0
0.2
0.4
0.6
0.8
1.2
600
95 10325
1.0Pure Green
λ - Wavelength ( nm )
I
- R e l a t i v e L u m i n o u s I n t e n s i t y
V r e l
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VISHAYTLHG / O / P / R / Y420.
Document Number 83005
Rev. 1.3, 31-Aug-04
Vishay Semiconductors
www.vishay.com
9
Package Dimensions in mm
95 10913
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Document Number 83005
Rev. 1.3, 31-Aug-04
VISHAYTLHG / O / P / R / Y420.Vishay Semiconductors
Ozone Depleting Substances Policy Statement
It is the policy of Vishay Semiconductor GmbH to
1. Meet all present and future national and international statutory requirements.
2. Regularly and continuously improve the performance of our products, processes, distribution andoperatingsystems with respect to their impact on the health and safety of our employees and the public, aswell as their impact on the environment.
It is particular concern to control or eliminate releases of those substances into the atmosphere which areknown as ozone depleting substances (ODSs).
The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSsand forbid their use within the next ten years. Various national and international initiatives are pressing for anearlier ban on these substances.
Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate theuse of ODSs listed in the following documents.
1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments
respectively2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental
Protection Agency (EPA) in the USA
3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively.
Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depletingsubstances and do not contain such substances.
We reserve the right to make changes to improve technical designand may do so without further notice.
Parameters can vary in different applications. All operating parameters must be validated for eachcustomer application by the customer. Should the buyer use Vishay Semiconductors products for anyunintended or unauthorized application, the buyer shall indemnify Vishay Semiconductors against all
claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personaldamage, injury or death associated with such unintended or unauthorized use.
Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, GermanyTelephone: 49 (0)7131 67 2831, Fax number: 49 (0)7131 67 2423
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