lecture_3_given.pdf
-
Upload
vineet-sharma -
Category
Documents
-
view
212 -
download
0
Transcript of lecture_3_given.pdf
-
1
EL 512 VLSI Subsystem Design
Instructor: Mazad S. Zaveri
Faculty Block 4, Room 4206Email: [email protected]
http://intranet.daiict.ac.in/~mazad_zaveri/
-
EL 511 VLSI2
Capacitance For an isolated wire
Capacitance due to the parallel plates bottom of wire with the substrate
Fringing capacitance arising from fringing fields along all the edges of the conductor with finite thickness
Fringe = border or periphery For a non-isolated wire, i.e. wire that has adjacent wires
Parallel plate capacitance bottom with substrate Fringing capacitance with the substrate Parallel plate capacitance side with the side of the other wire
And some fringing capacitance between the two wire edges/surfaces
-
EL 511 VLSI3
How to calculate the values of these capacitances ?
Parallel plate capacitances C = ox A/d
With appropriate interpretation of area A and d Between wire-bottom and substrate Between wire-side and other wires side
Fringing capacitance with substrate See next slide
-
EL 511 VLSI4
Fringing capacitance Two formulas proposed by some authors
Includes both the fringing capacitance and the bottom-parallel plate capacitance
Obviously, these formulae do not account for the capacitances with neighbors above or on the sides.
[Meijs et al.]
[Yuan et al.]
-
EL 511 VLSI5
Upper Bound and Lower Bound for a wire capacitance
Upper Bound: Assume that the layers above and below the conductor of interest are solid ground
planes Assume, the layers above and below, are not switching, hence, can be modeled as ground
planes Assume, that the capacitance to neighbors, other than the most adjacent ones, is
negligible Note: Table 4.8 (on the next slide) gives the upper bound
Lower Bound: Assume that there are no conductors in the system except the substrate
Note: Table 4.9 does not provide lower bound, because it assumes adjacent wires (on the same layer) to be present. Hence, Table 4.9 is for a condition between upper bound and lower bound.
To calculate lower bound, we can use equations on the previous slide (or we can neglect Cadj from Table 4.9)
-
EL 511 VLSI6
Capacitance table Capacitance to neighbors accounts for more than 50% of total capacitance
-
EL 511 VLSI7
Capacitance table Overall capacitance is slightly smaller, because there is no layer above
But, the Cadj is slightly higher, because the fringing fields now terminate on the neighbors
-
8
In practice, the layers above and below the conductor of interest are neither solid planes nor totally empty The density of the metal on each level will be
dependent on the layout/implementation of the overall circuit functionality/connectivity
-
EL 511 VLSI9
Delay Wires have distributed resistance and capacitance along its length
Wires can be approximated by lumped elements L-model -model T-model
-model is generally used to model long wires, and at least 3 to 4segments are generally considered
Because both wire resistance and capacitance increase with length, wire RC-delay grows quadratically with length Some ways to reduce delay
Thicker and wider wires, low resistance materials/metals, Low di-electric materials between conductors
Polysilicon and diffusion based wires (also called runners) have very high resistance, even when silicided.
Do not use diffusion as wire.
Use polysilicon sparingly, usually in latches and FF
-
EL 511 VLSI10
Crosstalk Crosstalk phenomenon
When a wire A switches, it tends to bring its neighbor B along with it, due to capacitive coupling
Crosstalk effect is dependent on the direction of switching of A and switching of B
Crosstalk leads to undesirable effects in terms of Delay Noise
Crosstalk depends on the ratio of Cadj to the total capacitance. The total capacitance may include the load capacitance (if there is any) For short wires, with large loads, crosstalk is unimportant For long wires, crosstalk is important
-
EL 511 VLSI11
Crosstalk Delay Effects
When two adjacent wires A and B switch (creating V), the direction of switching affects the amount of charge that must be delivered (Q=Cadj V), and the delay of switching (Ceff)
Delay will be the worst case, when A and B switch in opposite directions (V=2VDD) Coupling capacitor effectively becomes twice as large (2Cadj)
(Miller Coupling effect/factor = 2) Delay will be least, when A and B switch in same
direction (V=0) Coupling capacitor effectively absent (Cadj=0)
(A is switching)
-
EL 511 VLSI12
Crosstalk Noise Effects Wire A switches, while wire B is supposed to remain constant
But A will try to switch B partially, creating noise on B Modeled as Aggressor and Victim network
Condition: Victim is floating (not-driven) Capacitive voltage divider to compute victim noise
Condition: Victim is actively driven Victims driver will supply current to oppose and reduce the victim noise, induced
by the aggressor Drivers are modeled with resistors
-
EL 511 VLSI13
Crosstalk Noise (Victim is undriven/driven) Waveform shows
Step signal on the aggressor wire Coupled noise-signal on the victim wire
Victim is driven with inverters of different inverter gate-size (current driving capacity) When victim is not driven (i.e. floating) noise remains indefinitely When victim is driven, the victims driver opposes the transition, and restores the
victims voltage level Depending on the wires voltage, Aggressor (driver) transistor will be in LIN/SAT, and victim transistor will be in LIN/SAT
Accordingly, that will affect Raggressor and Rvictim