Lecture 7: Models for Integrated Active Devices...1 Lecture 7: Models for Integrated Active Devices...

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1 Lecture 7: Models for Integrated Active Devices • Notes from – P. Allen, Analog Integrated Circuits and Systems • Review of MOS, BJT and Single Transistor Amplifiers How does the BJT work? • The BJT base emitter junction is forward biased • A small percentage of electrons crossing the base combine with holes • Electrons that reach the collector depletion region are swept and form the collector current

Transcript of Lecture 7: Models for Integrated Active Devices...1 Lecture 7: Models for Integrated Active Devices...

Page 1: Lecture 7: Models for Integrated Active Devices...1 Lecture 7: Models for Integrated Active Devices • Notes from – P. Allen, Analog Integrated Circuits and Systems • Review of

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Lecture 7: Models for Integrated Active Devices

• Notes from – P. Allen, Analog Integrated

Circuits and Systems

• Review of MOS, BJT and Single Transistor Amplifiers

How does the BJT work?

• The BJT base emitter junction is forward biased• A small percentage of electrons crossing the base combine with holes• Electrons that reach the collector depletion region are swept and form the collector current

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Large Signal Model for the BJT (forward Active)

Small Signal BJT

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MOS Structure

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Simple Large Signal MOSFET Model

Bulk Effect

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MOSFET Small-Signal Model

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Small-Signal Frequency Dependent Model

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