ECE723

Lecture 1: Introduction

The introduction covers the following:Semiconductor MaterialsSemiconductor DevicesBasic Fabrication Steps

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Figure 1.1 Gross world product (GWP) and sales volume of the electronics, automobile, semiconductor, and steel industries from

1980 to 2000 and projected to 2010

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Semiconductor Materials

Elemental SemiconductorsSi, Ge

III-V CompoundsAlP, AlAs, ALSb, GaN, GaP, GaAs, GaSb, InP, InAs, InSb

II-VI CompoundsZnO, ZnS, ZnSe, ZnTe, CdS, , CdSe, CdTe, HgS

AlloysAl1-xGaxAs, GaAs1-x Px, Hg1-x CdxTe, GaxIn1-xAs1-yPy

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Semiconductor DevicesMajor Semiconductor Devices

Year Semiconductor Device Author/Inventor

1874 Metal-semiconductor contact Braun

1907 Light Emitting Diode Round

1947 Bipolar Transistor Bardeen and Brittain; Shockley

1949 p-n Junction Shockley

1952 Thyristor Ebers

1954 Solar cell Chapin, Fuller, and Pearson

1957 Heterojunction bipolar transistor Kroemer

1958 Tunnel Diode Esaki

1960 MOSFET Kahng and Atalla

1962 Laser Hall, et. al.

1963 Heterostructure laser Kroemer; Alferow and Kazarinov

1963 Transferred-electron diode Gunn

1965 IMPATT diode Johnston, DeLoach, and Cohen

1966 MESFET Mead

1967 Nonvolatile semiconductor memory Kahng and Sze

1970 Charge-coupled device Boyle and Smith

1974 Resonant tunneling diode Chang, Esaki, and Tsu

1980 MODFET Mimura, et. al.

1994 Room-temperature single electron memory cell Yano, et. al.

2001 15-nm MOSFET Yu et. al.

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Figure 1.2 The first transistor. (Photograph courtesy of Bell Laboratories)

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Figure 1.3 The first metal-oxide-semiconductor field-

effect transistor. (Photograph courtesy of

Bell Laboratories

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Figure 1.4 The first monolithic integrated circuit. (Photograph courtesy of Dr. G.

Moore.)

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Figure 1.5 The first microprocessor.

(Photograph courtesy of Intel Corp.)

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Integrated Circuit Evolution

Progress due to:Feature size reduction - 0.7X/3 years (Moore’s Law)Increasing chip size - » 16% per year“Creativity” in implementing functions

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IC Layout

Approximately equal areas from ICs in 1961 and 1988.• ICs manufactured in the 1960s and late 1980s.

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IC Layout

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Figure 1.6 Exponential increase of dynamic

random access memory density versus year based

on the Semiconductor Industry Association

roadmap.

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Figure 1.7 Exponential increase of microprocessor computational power versus year.

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Figure 1.8 Growth curves for different technology

drivers.

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Figure 1.9 (a) A bare n-type Si wafer. (b) An oxidized Si wafer by dry or wet oxidation. (c) Application of resist. (d) Resist exposure through the mask.

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Figure 1.10 (a) The wafer after the development. (b) The wafer after SiO2 removal. (c) The final result after a complete lithographic process. (d) A p-n junction is formed in the diffusion or implantation process. (e) The wafer after metallization. (f) A p-njunction after the complete processes.

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Assignment #1

Research on Key Semiconductor Process Technologies.