LB Y8SG - Osram · LB Y8SG 1 Version 1.4 | 2018-02-12 Produktdatenblatt | Version 1.1 LB Y8SG Micro...
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LB Y8SG 1 Version 1.4 | 2018-02-12 www.osram-os.com LB Y8SG Micro SIDELED ® 3010 Micro SIDELED is a SMT LED with side emission. Due to its low package height it is ideal for applica- tions in limited space environments. Applications — Electronic Equipment — White Goods Features: — Package: white SMT package, colorless clear resin — Chip technology: ThinGaN — Typ. Radiation: 120° (Lambertian emitter) — Color: λ dom = 470 nm ( ● blue) — Optical efficacy: 21 lm/W — Corrosion Robustness Class: 1B
Transcript of LB Y8SG - Osram · LB Y8SG 1 Version 1.4 | 2018-02-12 Produktdatenblatt | Version 1.1 LB Y8SG Micro...
LB Y8SG
1 Version 1.4 | 2018-02-12
Produktdatenblatt | Version 1.1 www.osram-os.com
LB Y8SG
Micro SIDELED® 3010 Micro SIDELED is a SMT LED with side emission. Due to its low package height it is ideal for applica-tions in limited space environments.
Applications — Electronic Equipment — White Goods
Features: — Package: white SMT package, colorless clear resin
— Chip technology: ThinGaN
— Typ. Radiation: 120° (Lambertian emitter)
— Color: λdom = 470 nm (● blue)
— Optical efficacy: 21 lm/W
— Corrosion Robustness Class: 1B
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Ordering Information
Type Luminous Intensity 1) Ordering CodeIF = 20 mAIv
LB Y8SG-T1U2-35-1-Z 280 ... 710 mcd Q65110A8976
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Maximum RatingsParameter Symbol Values
Operating Temperature Top min. max.
-40 °C 110 °C
Storage Temperature Tstg min. max.
-40 °C 110 °C
Junction Temperature Tj max. 125 °C
Forward current TA = 25 °C
IF min. max.
5 mA 30 mA
Surge Current t ≤ 10 µs; D = 0.005 ; TA = 25 °C
IFS max. 300 mA
Reverse voltage 2) TA = 25 °C
VR max. 5 V
ESD withstand voltage acc. ANSI/ESDA/JEDEC JS-001 (HBM, Class 0)
VESD ESD sensitive device
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CharacteristicsIF = 20 mA; TA = 25 °C
Parameter Symbol Values
Dominant Wavelength 3) IF = 20 mA
λdom min. typ. max.
464 nm 470 nm 476 nm
Spectral Bandwidth at 50% Irel,max ∆λ typ. 25 nm
Viewing angle at 50 % IV 2φ typ. 120 °
Forward Voltage 4) IF = 20 mA
VF min. typ. max.
2.90 V 3.20 V 3.70 V
Reverse current 2) VR = 5 V
IR typ. max.
0.01 µA 10 µA
Real thermal resistance junction/ambient 5), 6) RthJA real max. 540 K / W
Real thermal resistance junction/solderpoint 5) RthJS real max. 320 K / W
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Brightness Groups
Group Luminous Intensity 1) Luminous Intensity. 1) Luminous Flux 7)
IF = 20 mA IF = 20 mA IF = 20 mAmin. max. typ.Iv Iv ΦV
T1 280 mcd 355 mcd 950 mlm
T2 355 mcd 450 mcd 1210 mlm
U1 450 mcd 560 mcd 1520 mlm
U2 560 mcd 710 mcd 1910 mlm
Forward Voltage Groups
Group Forward Voltage 4) Forward Voltage 4)
IF = 20 mA IF = 20 mAmin. max.VF VF
4 2.90 V 3.20 V
5 3.20 V 3.50 V
6 3.50 V 3.70 V
Wavelength Groups
Group Dominant Wavelength 3) Dominant Wavelength 3)
IF = 20 mA IF = 20 mAmin. max.λdom λdom
3 464 nm 468 nm
4 468 nm 472 nm
5 472 nm 476 nm
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Group Name on Label Example: T1-3-4Brightness Wavelength Forward Voltage
T1 3 4
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LB Y8SG
350 400 450 500 550 600 650 700 750 800
λ [nm]
0,0
0,2
0,4
0,6
0,8
1,0Irel
: Vλ
: blue
Relative Spectral Emission 7) Irel = f (λ); IF = 20 mA; TA = 25 °C
LB Y8SG
-100°
-90°
-80°
-70°
-60°
-50°
-40°
-30°
-20°-10° 0° 10° 20° 30° 40° 50° 60° 70° 80° 90°
ϕ [°]
0,0
0,2
0,4
0,6
0,8
1,0Irel
Radiation Characteristics 7) Irel = f (ϕ); TA = 25 °C
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LB Y8SG
5 6 7 8 9 10 20 30
IF [mA]
0,4
0,6
0,8
1,0
1,2
1,4IVIV(20mA) : blue
Relative Luminous Intensity 7), 8)
Iv/Iv(20 mA) = f(IF); TA = 25 °C
LB Y8SG
2,8 2,9 3,0 3,1 3,2 3,3 3,4
VF [V]
5
6
7
8
9
10
20
30IF [mA]
: blue
Forward current 7), 8)
IF = f(VF); TA = 25 °C
LB Y8SG
5 10 15 20 25 30
IF [mA]
-6
-4
-2
0
2
4
6
8∆λ dom [nm]
: blue
Dominant Wavelength 7)
∆λdom = f(IF); TA = 25 °C
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LB Y8SG
-40 -20 0 20 40 60 80 100
Tj [°C]
0,0
0,2
0,4
0,6
0,8
1,0
1,2IvIv(25°C) : blue
Relative Luminous Intensity 7)
Iv/Iv(25 °C) = f(Tj); IF = 20 mA
LB Y8SG
-40 -20 0 20 40 60 80 100
Tj [°C]
-0,2
0,0
0,2
0,4∆VF [V]
: blue
Forward Voltage 7)
∆VF = VF - VF(25 °C) = f(Tj); IF = 20 mA
LB Y8SG
-40 -20 0 20 40 60 80 100
Tj [°C]
-6
-4
-2
0
2
4
6
∆λ dom [nm]: blue
Dominant Wavelength 7)
∆λdom = λdom - λdom(25 °C) = f(Tj); IF = 20 mA
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Lx Y8SG
0 20 40 60 80 100T [°C]
0
5
10
15
20
25
30IF [mA ]
Do not use below 5 mA
: TA: TS
Max. Permissible Forward CurrentIF = f(T)
0
A
OHL02426
0.05
0.10
0.15
0.20
0.25
0.35
pt
FI D
Pt
= TPt
T
FI
1
0.05
0.50.2
0.02
0.1
=
0.010.005D
-5 110-410 10-3 -2 1010-1 0 10 10s 210
Permissible Pulse Handling CapabilityIF = f(tp); D: Duty cycle; TA = 85 °C
0
A
OHL02425
0.05
0.10
0.15
0.20
0.25
0.35
pt
FI D
Pt
= TPt
T
FI
1
0.05
0.50.2
0.02
0.1
=
0.010.005D
-5 110-410 10-3 -2 1010-1 0 10 10s 210
Permissible Pulse Handling CapabilityIF = f(tp); D: Duty cycle; TA = 25 °C
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Dimensional Drawing 9)
GPLY6065
0 ... 0.1 (0 ... 0.004)
3.1
(0.1
22)
2.9
(0.1
14)
0.7 (0.028)
0.5 (0.020)
1.0 (0.039)
1.2 (0.047)
Cathode
0.3
(0.0
12)
0.5
(0.0
20)
(15˚
)
2.3
(0.0
91)
2.1
(0.0
83)
1.3 (0.051)
1.1 (0.043)
(0.4 (0.016))
(0.6 (0.024))
0.25 (0.010)
0.20 (0.008)
Light emitting areatyp. 1.7 × 0.7
A
C
Approximate Weight: 6.0 mg
Corrosion test: Class: 1B Test condition: 25°C / 75 % RH / 200ppb SO2, 200ppb NO2, 10ppb H2S, 10ppb Cl2 / 21 days (EN 60068-2-60 (Method 4))
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For superior solder joint connectivity results we recommend soldering under standard nitrogen atmosphere. Package not suitable for ultra sonic cleaning.
Recommended Solder Pad 9)
OHPY1316
0.8 (0.031)
2.2
(0.0
87)
0.7
(0.0
28)
Component location on padBauteil positioniert
Padgeometrie für
C A
verbesserte Wärmeableitung
heat dissipationPaddesign for improved
LötstopplackSolder resist
C
A
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Reflow Soldering ProfileProduct complies to MSL Level 4 acc. to JEDEC J-STD-020D.01
00
s
OHA04525
50
100
150
200
250
300
50 100 150 200 250 300t
T
˚C
St
t
Pt
Tp240 ˚C
217 ˚C
245 ˚C
25 ˚C
L
Profile Feature Symbol Pb-Free (SnAgCu) Assembly UnitMinimum Recommendation Maximum
Ramp-up rate to preheat*)
25 °C to 150 °C2 3 K/s
Time tSTSmin to TSmax
tS 60 100 120 s
Ramp-up rate to peak*)
TSmax to TP
2 3 K/s
Liquidus temperature TL 217 °C
Time above liquidus temperature tL 80 100 s
Peak temperature TP 245 260 °C
Time within 5 °C of the specified peaktemperature TP - 5 K
tP 10 20 30 s
Ramp-down rate*TP to 100 °C
3 6 K/s
Time25 °C to TP
480 s
All temperatures refer to the center of the package, measured on the top of the component* slope calculation DT/Dt: Dt max. 5 s; fulfillment for the whole T-range
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Taping 9)
OHAY1516
1.5 (0.059)
4 (0.157)
2 (0.079)
3.5
(0.1
38)
1.75
(0.0
69)
8.1
(0.3
19)
0.9 (0.035)
2.4
(0.0
94)
3.3
(0.1
30)
1.25 (0.049)
0.3 (0.012) max.1.4 (0.055)
Cathode/Collector Side
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Tape and Reel 10)
Reel dimensions [mm]A W Nmin W1 W2 max Pieces per PU
180 mm 8 + 0.3 / - 0.1 60 8.4 + 2 14.4 3000
330 mm 8 + 0.3 / - 0.1 60 8.4 + 2 14.4 10000
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Barcode-Product-Label (BPL)
Moisture-sensitive product is packed in a dry bag containing desiccant and a humidity card according JEDEC-STD-033.
Dry Packing Process and Materials 9)
OHA00539
OSRAM
Moisture-sensitive label or print
Barcode label
Desiccant
Humidity indicator
Barcode label
OSRAM
Please check the HIC immidiately afterbag opening.
Discard if circles overrun.Avoid metal contact.
WET
Do not eat.
Comparatorcheck dot
parts still adequately dry.
examine units, if necessary
examine units, if necessary
5%
15%
10%bake units
bake units
If wet,
change desiccant
If wet,
Humidity IndicatorMIL-I-8835
If wet,
Mois
ture
Level 3
Flo
or tim
e 168 H
ours
Mois
ture
Level 6
Flo
or tim
e 6
Hours
a) H
umid
ity In
dicato
r C
ard is
> 1
0% w
hen read a
t 23 ˚
C ±
5 ˚C
, or
reflo
w, v
apor-phase r
eflow
, or equiv
alent p
rocessin
g (peak p
ackage
2. Afte
r th
is b
ag is o
pened, devic
es that w
ill b
e subje
cted to
infrare
d
1. Shelf
life in
seale
d bag: 2
4 month
s at <
40 ˚
C a
nd < 9
0% rela
tive h
umid
ity (R
H).
Mois
ture
Level 5
a
at facto
ry c
onditions o
f
(if b
lank, s
eal date
is id
entical w
ith d
ate c
ode).
a) M
ounted w
ithin
b) S
tore
d at
body tem
p.
3. Devic
es require
bakin
g, befo
re m
ounting, i
f:
Bag s
eal date
Mois
ture
Level 1
Mois
ture
Level 2
Mois
ture
Level 2
a4. If b
aking is
require
d,
b) 2a o
r 2b is
not m
et.
Date
and ti
me o
pened:
refe
rence IP
C/J
ED
EC
J-S
TD
-033 fo
r bake p
rocedure
.
Flo
or tim
e see b
elow
If bla
nk, see b
ar code la
bel
Flo
or tim
e > 1
Year
Flo
or tim
e 1
Year
Flo
or tim
e 4
Weeks10%
RH
.
_<
Mois
ture
Level 4
Mois
ture
Level 5
˚C).
OPTO
SEM
ICO
NDUCTORS
MO
ISTURE S
ENSITIV
E
This b
ag conta
ins
CAUTION
Flo
or tim
e 72 H
ours
Flo
or tim
e 48 H
ours
Flo
or tim
e 24 H
ours
30 ˚C
/60%
RH
.
_<
LE
VE
L
If bla
nk, see
bar code la
bel
LB Y8SG
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Transportation Packing and Materials 9)
OHA02044
PACKVAR:
R077Additional TEXT
P-1+Q-1
Multi TOPLED
Muste
r
OSRAM Opto
Semiconductors
(6P) BATCH NO:
(X) PROD NO:
10
(9D) D/C:
11(1T) LOT NO:
210021998
123GH1234
024 5
(Q)QTY: 2000
0144
(G) GROUP:
260 C RT240 C R
3
220 C R
MLBin3:Bin2: Q
-1-20
Bin1: P-1-20
LSY T6762
2a
Temp ST
R18DEMY
PACKVAR:
R077Additional TEXT
P-1+Q-1
Multi TOPLED
Muste
r
OSRAM Opto
Semiconductors
(6P) BATCH NO:
(X) PROD NO:
10
(9D) D/C:
11(1T) LOT NO:
210021998
123GH1234
024 5
(Q)QTY: 2000
0144
(G) GROUP:
260 C RT240 C R
3
220 C R
MLBin3:Bin2: Q
-1-20
Bin1: P-1-20
LSY T6762
2a
Temp ST
R18DEMY
OSRAM
Packing
Sealing label
Barcode label
Mois
ture
Level 3
Flo
or tim
e 168 H
ours
Mois
ture
Level 6
Flo
or tim
e 6
Hours
a) H
umid
ity In
dicato
r C
ard is
> 1
0% w
hen read a
t 23 ˚
C ±
5 ˚C
, or
reflo
w, v
apor-phase r
eflow
, or e
quivale
nt pro
cessing (p
eak package
2. Afte
r th
is b
ag is o
pened,
devices th
at will
be s
ubjecte
d to in
frare
d
1. Shelf
life in
seale
d bag: 2
4 month
s at <
40 ˚
C a
nd < 9
0% rela
tive h
umid
ity (R
H).
Mois
ture
Level 5
a
at facto
ry c
onditions o
f
(if b
lank, s
eal date
is id
entical w
ith d
ate c
ode).
a) M
ounted w
ithin
b) S
tore
d at
body te
mp.
3. Devic
es require
bakin
g, befo
re m
ounting, i
f:
Bag s
eal date
Mois
ture
Level 1
Mois
ture
Level 2
Mois
ture
Level 2
a4. If b
aking is
require
d,
b) 2a o
r 2b is
not m
et.
Date
and ti
me o
pened:
refe
rence IP
C/J
ED
EC
J-S
TD-0
33 for bake p
rocedure
.
Floor
time s
ee belo
w
If bla
nk, see b
ar code la
bel
Flo
or tim
e > 1
Year
Floor
time
1 Y
ear
Flo
or tim
e 4
Weeks10%
RH
.
_<
Mois
ture
Level 4
Mois
ture
Level 5
˚C).
OPTO
SEM
ICONDUCTO
RS
MO
ISTURE S
ENSITIV
E
This b
ag conta
ins
CAUTION
Flo
or tim
e 72 H
ours
Flo
or tim
e 48 H
ours
Flo
or tim
e 24 H
ours
30 ˚C
/60%
RH
.
_<
LE
VE
L
If bla
nk, see
bar code la
bel
Barcode label
Dimensions of transportation box in mmWidth Length Height
200 ± 5 mm 195 ± 5 mm 30 ± 5 mm
352 ± 5 mm 352 ± 5 mm 33 ± 5 mm
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Chip Technology: 6: Standard InGalP C: ATON F: Thinfilm InGaAlP G: ThinGaN (Thinfilm InGaN)
(Subcon: Sapphire) S: standard InGaN low current
´ Encapsulant Type / Lens Properties 7: Colorless clear or white volume conversion
(resin encapsulation) S: Silicone (with or without diffuser)
Wavelength Emission Color Color coordinates according (λdom typ.) CIE 1931/Emission color: B: 470 nm blue W: white S: 633 nm super red T: 528 nm true green Y: 587 nm yellow R: 625 nm red O: 606 nm orange G: 570 nm green CP: 560 nm pure green L: Light emitting diode
Package Type Y: Micro SIDELED
Lead / Package Properties 1: 2808 height: 0,8 mm 8: Reflector Standard
Type Designation System
L B Y 8 7 C
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NotesThe evaluation of eye safety occurs according to the standard IEC 62471:2006 (photo biological safety of lamps and lamp systems). Within the risk grouping system of this IEC standard, the LED specified in this data sheet fall into the class exempt group (exposure time 10000 s). Under real circumstances (for expo-sure time, eye pupils, observation distance), it is assumed that no endangerment to the eye exists from these devices. As a matter of principle, however, it should be mentioned that intense light sources have a high secondary exposure potential due to their blinding effect. As is also true when viewing other bright light sources (e.g. headlights), temporary reduction in visual acuity and afterimages can occur, leading to irrita-tion, annoyance, visual impairment, and even accidents, depending on the situation.
Subcomponents of this LED contain, in addition to other substances, metal filled materials including silver. Metal filled materials can be affected by environments that contain traces of aggressive substances. There-fore, we recommend that customers minimize LED exposure to aggressive substances during storage, pro-duction, and use. LEDs that showed visible discoloration when tested using the described tests above did show no performance deviations within failure limits during the stated test duration. Respective failure limits are described in the IEC60810.
For further application related informations please visit www.osram-os.com/appnotes
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Disclaimer
DisclaimerLanguage english will prevail in case of any discrepancies or deviations between the two language word-ings.
Attention please!The information describes the type of component and shall not be considered as assured characteristics. Terms of delivery and rights to change design reserved. Due to technical requirements components may contain dangerous substances.For information on the types in question please contact our Sales Organization.If printed or downloaded, please find the latest version on the OSRAM OS webside.
PackingPlease use the recycling operators known to you. We can also help you – get in touch with your nearest sales office.By agreement we will take packing material back, if it is sorted. You must bear the costs of transport. For packing material that is returned to us unsorted or which we are not obliged to accept, we shall have to invoice you for any costs incurred.
Product safety devices/applications or medical devices/applicationsOSRAM OS components are not developed, constructed or tested for the application as safety relevant component or for the application in medical devices.
In case Buyer – or Customer supplied by Buyer– considers using OSRAM OS components in product safety devices/applications or medical devices/applications, Buyer and/or Customer has to inform the local sales partner of OSRAM OS immediately and OSRAM OS and Buyer and /or Customer will analyze and coordi-nate the customer-specific request between OSRAM OS and Buyer and/or Customer.
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Glossary1) Brightness: Brightness values are measured during a current pulse of typically 25 ms, with an internal
reproducibility of ±8 % and an expanded uncertainty of ±11 % (acc. to GUM with a coverage factor of k = 3).
2) Reverse Operation: Reverse Operation of 10 hours is permissible in total. Continuous reverse opera-tion is not allowed.
3) Wavelength: The wavelength is measured at a current pulse of typically 25 ms, with an internal repro-ducibility of ±0.5 nm and an expanded uncertainty of ±1 nm (acc. to GUM with a coverage factor of k = 3).
4) Forward Voltage: The forward voltage is measured during a current pulse of typically 8 ms, with an internal reproducibility of ±0.05 V and an expanded uncertainty of ±0.1 V (acc. to GUM with a coverage factor of k = 3).
5) Thermal Resistance: Rth max is based on statistic values (6σ).6) Thermal Resistance: RthJA results from mounting on PC board FR 4 (pad size 16 mm² per pad)7) Typical Values: Due to the special conditions of the manufacturing processes of LED, the typical data
or calculated correlations of technical parameters can only reflect statistical figures. These do not nec-essarily correspond to the actual parameters of each single product, which could differ from the typical data and calculated correlations or the typical characteristic line. If requested, e.g. because of technical improvements, these typ. data will be changed without any further notice.
8) Characteristic curve: In the range where the line of the graph is broken, you must expect higher differ-ences between single LEDs within one packing unit.
9) Tolerance of Measure: Unless otherwise noted in drawing, tolerances are specified with ±0.1 and dimensions are specified in mm.
10) Tape and Reel: All dimensions and tolerances are specified acc. IEC 60286-3 and specified in mm.
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Published by OSRAM Opto Semiconductors GmbH Leibnizstraße 4, D-93055 Regensburg www.osram-os.com © All Rights Reserved.
