Laser Diodes - Mouser Electronics€¦ · 780nm high-speed response lasers ROHM’s 780nm (red)...
Transcript of Laser Diodes - Mouser Electronics€¦ · 780nm high-speed response lasers ROHM’s 780nm (red)...
Optoelectronics 2007-Oct.2007-Oct.
-Laser Diodes
Laser DiodesLaser Diodes
Catalog No.50P5817E 10.2007 ROHM © TSU
1st. Oct. 2007.
Product Catalog
www.rohm.com
■ Safety
■ Packaging Specifications (Unit : mm)
DIRECT EXPOSURE TO BEAMINVISIBLE LASER RADIATION-AVOID
MAXIMUM OUTPUTWAVELENGTH
b LASER PRODUCTCLASS
Part 1040.10 and 1040.11This product complies with 21 CFR
615, Japan.
ROHM CO.,LTD.21.Saiin Mizosaki-cho. Ukyo-ku Kyoto
mWnm
Laser Diode
from this aperture
AVOID EXPOSURE-lnvisibleLaser radiation is emitted
SEMICONDUCTOR LASERINVISIBLEThe light emitted from laser diodes, while almost invisible to the human
eye, can cause retinal damage if viewed directly. Never look directly into the laser beam or through any lenses or fibers when the system is operating.
For optical axis alignment or other operations, we recommend the use of an infrared-sensitive camera (ITV) or wearing protective goggles.
The products described in this specification are designed to be used with ordinary electronic equipment or devices (such as audio-visual equipment, office-automation equipment, communication device, electrical appliances, and electronic toys). If you intend to use these products or devices which require an extremely high level of reliability and malfunction of which would directly endanger human life (such as medical instruments. transportation equipment, aerospace machinery, nuclear-reactor controllers, fuel controllers and other safety devices), please be sure to consult with our sales representative in advance.
Explanation labelSafety standard(JIS C6802)
Tray Box
Productpackage
High radiation
frame
W
156 163 7
L H
(High radiation frame)
7
156
163
118
16
Antistatic laminatevacuum bag
75
Explanation labelSafety standard(JIS C6802)
Tray
120
Box
96
86Productpackage
�5.6
W
86 118 16
L H
(Other)
Quantity per unit(pcs/tray)Case
Vacuum packItem packaging
Tray
Packaging style
200 1000
Basic ordering unit(pcs)
240
Weight[g]
Quantity per unit(pcs/tray)Case
Vacuum packItem packaging
Tray
Packaging style
100 500
Basic ordering unit(pcs)
250
Weight[g]
170
27
160(Unit : mm)
(Unit : mm)
(Unit:mm) (Unit:mm)
1 2
ROHM Laser DiodesROHM, among the leading laser diode manufacturers, offers a wide lineup of high-reliability laser diodes, from low-output to high-output types, using the most advanced device technologies.
●660nm high-output lasers
ROHM’s 660nm band (red) high-output semiconductor lasers provide stable optical output characteristics and high breakdown resistance using our proprietary element construction.In addition, a thin package improves applicability in compact devices.
P.8, 9
●780nm low-output lasers
ROHM’s 780nm (infrared) low-output laser diodes feature high reliability and are available in a range of outputs, ensuring compatibility with a variety of applications. 660nm (red) dual-wavelength products are currently being developed.
P.13
●780nm high-speed response lasers
ROHM’s 780nm (red) high-speed response laser diodes are widely used primarily as light sources for laser printers. They are also ideal for use as a general laser light source in sensor applications.
P.14
●780nm high-output lasers
ROHM’s 780nm (infrared) high-output laser diodes utilize a novel active layer design for high breakdown resistance. In addition, efficient management of each lot is ensured by thorough quality control.
P.12
●660nm low-output lasers
ROHM’s 660nm band (red) low-output laser diodes command a large market share – a testament to their high reliability.The wide range of outputs can respond to a variety of needs. Dual-wavelength products in the 780nm band (infrared) are currently under development. P.10, 11
●660nm high-speed response lasers
ROHM’s 660nm band (red) high-speed responselaser diodes feature both low power consumptionand high-speed response by optimizing element construction.
P.7
New series
1 2
ROHM Laser DiodesROHM, among the leading laser diode manufacturers, offers a wide lineup of high-reliability laser diodes, from low-output to high-output types, using the most advanced device technologies.
●660nm high-output lasers
ROHM’s 660nm band (red) high-output semiconductor lasers provide stable optical output characteristics and high breakdown resistance using our proprietary element construction.In addition, a thin package improves applicability in compact devices.
P.8, 9
●780nm low-output lasers
ROHM’s 780nm (infrared) low-output laser diodes feature high reliability and are available in a range of outputs, ensuring compatibility with a variety of applications. 660nm (red) dual-wavelength products are currently being developed.
P.13
●780nm high-speed response lasers
ROHM’s 780nm (red) high-speed response laser diodes are widely used primarily as light sources for laser printers. They are also ideal for use as a general laser light source in sensor applications.
P.14
●780nm high-output lasers
ROHM’s 780nm (infrared) high-output laser diodes utilize a novel active layer design for high breakdown resistance. In addition, efficient management of each lot is ensured by thorough quality control.
P.12
●660nm low-output lasers
ROHM’s 660nm band (red) low-output laser diodes command a large market share – a testament to their high reliability.The wide range of outputs can respond to a variety of needs. Dual-wavelength products in the 780nm band (infrared) are currently under development. P.10, 11
●660nm high-speed response lasers
ROHM’s 660nm band (red) high-speed responselaser diodes feature both low power consumptionand high-speed response by optimizing element construction.
P.7
New series
3
What is a laser diode?What is a laser diode?
Overview of laser diodes
Laser Diode Features and ApplicationsSample applications that use features of lasers (light whose wavelength and phase are in phase) are shown below. Additional uses, such as projector light sources and heating of minute areas, are also possible.
Expanding into a variety of applications
High speed, low noise
Optical Communications
Long distance, high speed, electrically insulated
Wireless Communication
High speed, low noise
DVD Readers
Foreign particles, dust Minutedetection over long distances
Dusts
Optical Sensors
Can check read position
Bar Code Readers
High speed, high precision
Laser Printers
Detailed, high precision
Position Markers
High accuracy visible spot
Meters
高速反応・高精度
Optical Mice
High precision, high-speed response
Laser Microscopes
Highly precise spot focus
Laser Pointers
ON
Allows accurate pointing via pin spot illuminationEnables high-speed reading of minute signals with micron spots
High-speed modulation is possible, making it possible to transmit large amounts of information
Attenuation over distance is low, allowing for far transmission
(1)
(2)
(3)
(4)
(5)
Illumination
Reading
Measurements
Communications
Sensors
Characteristics Function Application ExamplesLaser microscopes, laser scalpels, pointing markers, and the like.Optical disk reading/writing (CDs, DVDs)Road distance / building height measurements, for example.Optical communications in PCs, mobile phones, and other equipment.Sensor devices such as fire alarms, dust control, and laser mice.
Interference fringes are easily created, enabling detection of minute changes
Height adjustable, highly detailed
●What is a laser? This is actually an acronym for “Light Amplification by Stimulated Emission of Radiation.” Basically, this means increasing the amplitude of light by induced emission.
● The difference between laser diodes and light emitting diodes (LEDs) Both laser diodes and LEDs are formed through the creation of a PN semiconductor junction. When an electrical current is supplied a positive hole, which has a positive charge, and an electron, which has a negative charge, bond, emitting light.
Since an LED produces natural light, the wavelength and phase are not uniform. A laser diode, on the other hand, operates by induced emission, meaning that the wavelength and phase of the light are uniform. Its particular characteristics are based on the underlying theory that the amplitude of light can increased as it travels back and forth within a resonator, making it possible to obtain large optical outputs. Therefore, a laser diode, in contrast with an LED, generates coherent or ‘arrayed’ light using a lens, which can be sent long distances or focused on an extremely small point. In addition, faster operation is possible compared with LEDs, enabling widespread use in more disparate fields. (For application examples, see below)
Laser Diode
Light Emitting Diode
・ Linear light emission・Monochrome light
・ Light is dispersed.・Mixed colors
Structural Diagram
Travels back and forth between reflecting mirrors,increasing amplitude
4
5mW
Infrared780nm CD
Playback
DVD / CD Playback
CD Recording CD Recording
Models currentlyunder development
Laser PrinterHigh-speedLaser Printer
Red / infrared dualwavelength650nm780nm
Red650nm
Blue-violet400nm
10mW 20mW 200mW 300mW 400mW
DVD / CDHigh-speedRecording
DVDHigh-speedRecording
DVDRecording
Next GenerationDVD Recording
Next GenerationDVD Playback
DVD PlaybackLaserPointer
DVD Playback/CD Recording
DVD Recording/ CD Playback
Low Output Medium Output High Output Ultra-high Output
CD-R
REWRITABLE CD-R
Application Map
660nm High Speed Lasers
Class
660nm Low Power Lasers(660nm / 780nm Dual Wave Low Power Lasers)
780nm High Power Lasers
780nm High Speed Lasers
Others
780nm Low Power Lasers
660nm High Power Lasers(660nm / 780nm Dual Wave High Power Lasers)
Category SubcategoryOptical DiskPart Number Printer OtherHD DVD
/ BDDVD W DVD P
/ ROMCOMB DVD
RecCD P/ROM
HighSpeed
MediumSpeed
Multi Generaluse
PPCBar
CodeScanner
Sensor OpticalSensor
High HeatDissipation
SlimCompatibility
Laser Diodes : Lineup by ApplicationLaser Diodes : Lineup by Application
RLD65NZB1RLD65PGB7RLD2WMGU1RLD2WMGS1RLD65MPT4RLD65MPT7RLD2WMUV2RLD2WMFV2RLD2WMFL1RLD2WMNL2RLD2WMUS3RLD78PPY4RLD78PPY6RLD2WMGZ4RLD78MPA1RLD78MRA1RLD78NZH1RLD78NZH2RLD78NZM1RLD65MPT3-13ARLD78MZGM
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☆
☆☆☆
☆
☆☆☆
● : Recommended Products○ : Compatible Products
☆ : Under Development
5
Laser Diodes LineupLaser Diodes Lineup
High radiation frame
High radiation frame
High radiation frame
RLD2WMGU1
RLD65PGB7
RLD2WMGS1
662
782
658
662
782
(V)VR
2
2
2
2
2
ToprMax.(°C)
75
75
75
75
75
(mA)ITH
60
50
75
60
55
Iop(mA)
150
160
215
150
65
Vop(V)
2.7
1.9
3.2
2.7
1.9
θ//(deg)
9.5
7.5
9.0
9.5
8.5
(deg)θ
17.0
15.5
16.0
17.0
15.5
80
90
120
80
10
(mA)Im
-
-
-
-
-
300
(mW)Po
350
300
240
10
650nm LD
(1)(2)
780nm LD
(3)
LD
(2)(3)(1)
RLD65MPT4φ5.6mm
(Open packaging spec②)
φ5.6mm(Open packaging spec②)
RLD65MPT7
φ5.6mm(Open twin type)
φ5.6mm(Open twin type)
RLD2WMUV2
φ5.6mm(4 Leads type)
4PIN frame
RLD2WMFV2
RLD2WMFL1
RLD2WMNL2
RLD2WMUS3
655
655
655
785
655
785
655
785
7
(mW)Po
10
7
7
7
7
7
7
(V)VR
2
2
2
2
2
2
2
2
ToprMax.(°C)
70
70
70
70
70
70
75
75
(mA)ITH
30
20
20
18
20
18
10
10
Iop(mA)
40
30
28
30
28
30
17
15
Vop(V)
2.3
2.3
2.3
1.9
2.3
1.9
2.3
1.9
(mA)Im
0.15
0.15
0.14
0.25
0.14
0.25
0.12
0.15
θ//(deg)
8
8
8
10
8
10
27
32
7
5
5
5
5
5
5
5
(deg)θ
27
27
27
32
27
32
10
10
655
785
662
785
7
7
20
20
2
2
2
2
85
85
70
70
30
25
22
22
45
45
40
45
2.0
1.8
2.3
1.8
0.12
0.22
0.2
0.25
8
10
10
10
5
5
15
15
27
32
20
17
(3)
LD
PD
(1)(2)
φ5.6mmNote) Unless otherwise specified, the electrical and optical characteristics are typical values.
RLD65NZB1 658
(mW)Po
10
(V)VR
2
ToprMax.(°C)
60
(mA)ITH
15
Iop(mA)
25
Vop(V)
2.2
θ//(deg)
9
(deg)θ
20 6
(mA)Im
0.4 (3)
LD
PD
(1)
(2)
P.7
P.8, 9
P.10, 11
4PIN frame
(4)
650nmLD
PD
(1)
(2)780nmLD
(3)
(4)
650nmLD
PD
(1)
(2)780nmLD
(3)
(2)
650nmLD
780nmLD
PD
(1)(4)(3)
660nm Low Power Lasers (660nm / 780nm Dual Low Power Lasers)
660nm High Power Lasers (660nm / 780nm Dual Wave High Power Lasers)
660nm High Speed Lasers
Equivalent circuitPackagePart No.
Absolute maximum ratings(Tc=25°C) Electrical and characteristics(Tc=25°C)
λp(nm)
WavelengthPo
(mW)
Equivalent circuitPackagePart No.
Absolute maximum ratings(Tc=25°C) Electrical and characteristics(Tc=25°C)
λp(nm)
WavelengthPo
(mW)
Equivalent circuitPackagePart No.
Absolute maximum ratings(Tc=25°C) Electrical and characteristics(Tc=25°C)
λp(nm)
WavelengthPo
(mW)
: Under development Note) Unless otherwise specified, the electrical and optical characteristics are typical values.
: Under development Note) Unless otherwise specified, the electrical and optical characteristics are typical values.
(Pulse)
(Pulse)
(Pulse)
6
φ5.6mm
φ5.6mm
(mW)Po
(V)VR Topr
Max.(°C) (mA)
ITH Iop(mA)
Vop(V) (mA)
Im θ//(deg)(deg)
θ
(3)
LD
PD
(1)
(2)
(3)
LD
PD
(1)
(2)
φ5.6mm(Open package spec①)
φ5.6mm(Compatible frame)
λp(nm)
Wavelength
(mW)Po
(V)VR Topr
Max.(°C) (mA)
ITH Iop(mA)
Vop(V)
θ//(deg)(deg)
θ(mA)Im
(3)
LD
PD
(1)
(2)
φ5.6mm
φ5.6mm
φ5.6mm
(mW)Po
(V)VR Topr
Max.(°C) (mA)
ITH Iop(mA)
Vop(V) (mA)
Im θ//(deg)(deg)
θ
LD
(3)
PD
(1)
(2)
High radiation frame(1)
(2)
780nm LD
650nm LD(3)
�5.6mm(Open package spec②)
(V)VR Topr
Max.��C) (mA)
ITH Iop(mA)
Vop(V)
θ//(deg)(deg)
θ(mA)Im
(mW)Po
(Pulse)
(Pulse)
(Pulse)
LD
(3)(1)(2)
P.12
P.13
P.14
Laser Diodes LineupLaser Diodes Lineup
Others
780nm Low Power Lasers
780nm High Speed Lasers
780nm High Power Lasers
Equivalent circuitPackagePart No.
Absolute maximum ratings(Tc=25°C) Electrical and characteristics(Tc=25°C)
λp(nm)
WavelengthPo
(mW)
Equivalent circuitPackagePart No.
Absolute maximum ratings(Tc=25°C) Electrical and characteristics(Tc=25°C)
λp(nm)
WavelengthPo
(mW)
Equivalent circuitPackagePart No.
Absolute maximum ratings(Tc=25°C) Electrical and characteristics(Tc=25°C)
λp(nm)
WavelengthPo
(mW)
Equivalent circuitPackagePart No.
Absolute maximum ratings(Tc=25°C) Electrical and characteristics(Tc=25°C)
Po(mW)
6
φ5.6mm
φ5.6mm
RLD65MPT3-13A
RLD78MZGM
655
785
(mW)Po
5
5
(V)VR
2
2
Topr Max.(°C)
40
60
(mA)ITH
30
35
Iop(mA)
40
45
Vop(V)
2.3
1.9
(mA)Im
0.2
0.2
θ//(deg)
8
11
5
3
(deg)θ
27
37
(3)
LD
PD
(1)
(2)
(3)
LD
PD
(1)
(2)
φ5.6mm(Open package spec①)
RLD78MPA1
φ5.6mm(Compatible frame)
RLD78MRA1
λp(nm)
Wavelength
785
785
(mW)Po
5
4.5
(V)VR
2
2
ToprMax.(°C)
70
70
(mA)ITH
35
35
Iop(mA)
45
45
Vop(V)
1.9
1.9
θ//(deg)
11
11
(deg)θ
37
37
3
3
(mA)Im
0.15
0.15
(3)
LD
PD
(1)
(2)
φ5.6mm
φ5.6mm
φ5.6mm
RLD78NZH2
RLD78NZH1
785
785
(mW)Po
10
5
(V)VR
2
2
Topr Max.(°C)
60
60
(mA)ITH
20
20
Iop(mA)
35
27
Vop(V)
1.9
1.9
(mA)Im
0.35
0.35
θ//(deg)
11
11
6
3
(deg)θ
28
28
LD
(3)
PD
(1)
(2)
RLD78NZM1 785 10 2 60 10 20 1.9 1.0 9 628
High radiation frame
RLD2WMGZ4(1)
(2)
780nm LD
650nm LD(3)
RLD78PPY6�5.6mm
(Open package spec②)
RLD78PPY4
785
785
(V)VR
2
2
ToprMax.��C)
75
75
(mA)ITH
35
35
Iop(mA)
160
130
Vop(V)
2.1
2.0
θ//(deg)
8.0
8.0
(deg)θ
16.5
16.5
120
90
(mA)Im
�
�
655
782
2
2
75
75
25
35
30
130
2.3
1.9
10.5
8.0
24.0
16.5
5
90
�
�
10
240
(mW)Po
280
240(Pulse)
(Pulse)
(Pulse)
LD
(3)(1)(2)
P.12
P.13
P.14
Laser Diodes LineupLaser Diodes Lineup
Others
780nm Low Power Lasers
780nm High Speed Lasers
780nm High Power Lasers
Equivalent circuitPackagePart No.
Absolute maximum ratings(Tc=25°C) Electrical and characteristics(Tc=25°C)
λp(nm)
WavelengthPo
(mW)
Equivalent circuitPackagePart No.
Absolute maximum ratings(Tc=25°C) Electrical and characteristics(Tc=25°C)
λp(nm)
WavelengthPo
(mW)
Equivalent circuitPackagePart No.
Absolute maximum ratings(Tc=25°C) Electrical and characteristics(Tc=25°C)
λp(nm)
WavelengthPo
(mW)
Equivalent circuitPackagePart No.
Absolute maximum ratings(Tc=25°C) Electrical and characteristics(Tc=25°C)
Po(mW)
: Under development Note) Unless otherwise specified, the electrical and optical characteristics are typical values.
: Under development Note) Unless otherwise specified, the electrical and optical characteristics are typical values.
Note) Unless otherwise specified, the electrical and optical characteristics are typical values.
Note) Unless otherwise specified, the electrical and optical characteristics are typical values.
7
10
8
6
4
2
00 10 20 30 40 50
RL-D65MZT2 (ROHM Conventional Product))RLD65NZB1Optical Output (mW)
Operating Current (mA)
Reduced30%!
660nm High Speed Lasers660nm High Speed LasersRLD65NZB1RLD65NZB1
Low power consumption
Low Droop Characteristics
Lineup
Dimensions
φ5.6mmNote) Unless otherwise specified, the electrical and optical characteristics are typical values.
RLD65NZB1 658
(mW)Po
10
(V)VR
2
ToprMax.(°C)
60
(mA)ITH
15
Iop(mA)
25
Vop(V)
2.2
θ//(deg)
9
(deg)θ
20 6
(mA)Im
0.4 (3)
LD
PD
(1)
(2)
Equivalent circuitPackagePart No.
Absolute maximum ratings(Tc=25°C) Electrical and characteristics(Tc=25°C)
λp(nm)
WavelengthPo
(mW)
Feature Summary Applications・ Laser printers・Optical disk reading・Laser pointers, sensors・Bar code readers・Laser microscopes, position sensors・Distance sensors, optical mice, and the like.
・ Low power consumption・Low droop characteristics・PIN photo diode built in
Single-mode red laser diode utilizing proprietaryconstruction for low power consumption.
The world’s smallest operation current 30% less than conventional products contributes to increased energy savings.
A droop of 10% or less (1mW output, Tc = 25°C) is possible due to proprietary construction. Output drop caused by self-generated heat is low, and the electrical characteristics are stable throughout a wide temperature range.
90°±2°
φ3.
6
φ1.
0min
.0.4±0.1
1.0 ±
0.1 φ
4.4+
0
(3)
(1)
(2)
1.2 ±
0.1
6.5 ±
0.5
2.3 ±
0.5
Opt
ical d
istan
ce1.
35±0
.1
3-φ0.45
+0-0.025φ5.6
Laser chip
Cover glass
● φ5.6mmTOP VIEW
Current Consumption27mA(10mW output, Tc = 25°C)
NEW
(Unit: mm)
�
��Oct. 2007 ROHM study.
Competitor B
Competitor A
8
・High light separation precision (Actual performance: ±0.2 µm; mask precision level) Provides stable output with little variation in characteristics.
Thin, high heat dissipation frame
Stable optical output characteristics (Dual Wave High Power Lasers)
・ DVD recording・CD recording・Compact, thin devices・Optical pickups
・Thin, high heat dissipation package・Stable optical output characteristics
Stable optical output and high breakdownresistance using proprietary elementconstruction. Thin package ideal for compact devices.
The thin, high heat dissipation frame efficiently dissipates heat close to the laser element – the actual source of heat.
Maintaining a precise distance between light-emitting points is an important requirement for dual-wavelength lasers. ROHM have adopted a proprietary manufacturing flow, resulting in stable optical output far field patterns with little deformation.
・The optical output strength distribution (far field pattern) is distributed stably on the left and right of the central axis due to proprietary element design (light containment construction). Contributes to stabilization of optical characteristics in sets.
CompetitorProduct
ROHM
Stripe Formation Steps Features
・Light origin precision dependent on mask alignment.・Easy to simplify process.
・High light origin precision (Variations between wafers and lots do not occur)
Formed separately
Formed simultaneously
Formed separately
Large variation in light origin
・Palladium plating for the pins is highly resistant to sulphurization, preventing atmospheric discoloration.
・Flat bottom surface design results in a wide surface area that facilitates heat dissipation.
(Conventional Product) High Heat Dissipation ProductThe wide flat surface area improves heat dissipation
Relat
ive Em
itted L
ight S
treng
th
Angle (deg)-30 -20 -10 0 10 20 30
FFP (Far Field Pattern) Characteristics
660nm High Power Lasers660nm High Power Lasers660nm / 780nm Dual Wave High Power Lasers
Feature Summary Applications
9
660nm High Power Lasers660nm High Power Lasers660nm / 780nm Dual Wave High Power Lasers
Lineup
Dimensions
● High radiation frameTOP VIEW
1.6
0.4
0.7
2-R0.5
0.235(Emitting point:Y)
5.153.6
2.752.10.
450.8
3.0
1.3
3-0.4
0.45(Emitting point:Z)
0.853.41.5
1.45
1.0
5.0
(1)(1) (2) (3)(3)(3)
Tolerance is ±0.1, unless otherwise specified. (Unit : mm)
High radiation frame
High radiation frame
High radiation frame
RLD2WMGU1
RLD65PGB7
RLD2WMGS1
662
782
658
662
782
(V)VR
2
2
2
2
2
ToprMax.(°C)
75
75
75
75
75
(mA)ITH
60
50
75
60
55
Iop(mA)
150
160
215
150
65
Vop(V)
2.7
1.9
3.2
2.7
1.9
θ//(deg)
9.5
7.5
9.0
9.5
8.5
(deg)θ
17.0
15.5
16.0
17.0
15.5
80
90
120
80
10
(mA)Im
-
-
-
-
-
300
(mW)Po
350
300
240
10
650nm LD
(1)(2)
780nm LD
(3)
LD
(2)(3)(1)
Equivalent circuitPackagePart No.
Absolute maximum ratings(Tc=25°C) Electrical and characteristics(Tc=25°C)
λp(nm)
WavelengthPo
(mW)
: Under development Note) Unless otherwise specified, the electrical and optical characteristics are typical values.
(Pulse)
(Pulse)
(Pulse)
10
660nm Low Power Lasers660nm Low Power Lasers
Low operating current (High temperature operation characteristics)
660nm / 780nm Dual Low Power Lasers
Low noise
・DVD players・DVD-ROM・Component drives・Bar code readers・Sensors and more
・Low output red・Industry standard diameter (5.6)・Glass-less cap
Market proven high reliability. The lineup isavailable in a wide range of outputs for broadcompatibility. 780nm (infrared) dual-wavelengthproducts are currently under development.
Rohm’s unique die designing enabled LD’s stable drive at high temperature range and high breakdown voltage level!
Matching with original high frequency modulation IC reduces noise.
High FrequencyModulation ICBU9369FVM
DVD I-L characteristics
Thermal over-drive test COD test
Low Iop by reduction of absorption-loss ESD test Improvement of ESD resistance at DVD side
0%
10%
20%
30%
40%
50%
60%
0 10 20 30 40 50 60 70 80 90 100
Freq
uenc
y
ESD (V) EIAJ (200pF, 0Ω) machine modelJudgement : 10mA raise above the initial value
An introduction of “Actual Refractive Index WaveguideStructure” succeeded to reduce the operation current
below the conventional threshold level.
ESD-resistance level’s drop, which is trade-off oflow-current operation, is solved by the new die structure
enhancing ESD-resistance level 2 times higher.
0%
20%
40%
60%
80%
100%
10 15 20 25 30 35 40 45 50 55 60
Pcod(mW)
Freq
uenc
y
0.0
10.0
20.0
30.0
40.0
50.0
60.0
70.0
0 2 4 6 8 10 12 14 16 18 20 42 44 46 48 5032 34 36 38 40 52 54 56 58 6022 24 26 22 30
Meas. conditions : 5mW(CW) APCLD type : 4-pin frameNo heat sinkWind : NoConstant Temperature Bath : ESPE STH-120
Iop5
(mA)
50℃ set 55℃ set 60℃ sset
Time (min) / Fixed temperature on Constant Temperature Bath65℃ set 70℃ set 75℃ set
New products
New products
New products
Conventionalproducts
Conventionalproducts
Conventionalproducts
New productsConventionalproducts
0
1
2
3
4
5
6
7
0 10 20 4030 50 60 70 80
RLD2WMFL1DVD I-L characteristics(Tc=90℃)
Opt
ical
out
put(m
W)
Current(mA) Voltage(V)
Operation output
24% Down
Feature Summary Applications
11
660nm Low Power Lasers660nm Low Power Lasers660nm / 780nm Dual Low Power Lasers
Lineup
Dimensions90°±2°
�3.6
�1.0
min
.0.4±0.1
1.0 ±
0.1 �4
.4�0
(3)
(1)
(2)
1.2 ±
0.1
6.5 ±
0.5
2.3 ±
0.5
Opt
ical d
istan
ce1.
35±0
.1
3-�0.45
�0�0.025�5.6
Laser chip
● �5.6mm (Open packaging spec②)TOP VIEW
90°±2°
1.0 ±
0.1
0.4±0.1
�3.6
±0.1
�4.4
max
(4)
(3)
(1)
(2)
Optical distance1.18±0.1
Laser chip �0�0.025�5.6
1.2 ±
0.1
2.3 ±
0.2
0.5m
ax
6.5 ±
0.51.2max
4-�0.45
● �5.6mm (Open twin type)TOP VIEW
(4)
(3)
(1)
(2)
1.2max4-�0.45
● �5.6mm (4 Lead type)TOP VIEW
90°±2°
�3.6
± 0.1�2
.0± 0
.20.4±0.1
5.6
1.0 ±
0.1
2.3 ±
0.2
1.2 ±
0.1
0.5m
ax.
Optical distance1.18±0.08
Sub-mount
Laser chip
Cover glass
�4.4
+06.
5+0.
5
+0-0.025
�1.6�1min
0.5min
(Unit : mm)
● 4PIN frame
5.24.1max
2-R0.5min
2-R0.5min
3.7max
4-0.45max
4-0.351
4 3 2 1
3.8
0.5 0.
7 1.5m
ax0.
22(E
mittin
g Poin
t:Y)
0.61.4
0.4
(Emittin
g Poin
t:Z)
0.6
0.75
2.7
3.05
5
Emitti
ng P
oint:Y
)1.7
5
TOP VIEW
RLD65MPT4φ5.6mm
(Open packaging spec②)
φ5.6mm(Open packaging spec②)
RLD65MPT7
φ5.6mm(Open twin type)
φ5.6mm(Open twin type)
RLD2WMUV2
φ5.6mm(4 Leads type)
4PIN frame
RLD2WMFV2
RLD2WMFL1
RLD2WMNL2
RLD2WMUS3
655
655
655
785
655
785
655
785
7
(mW)Po
10
7
7
7
7
7
7
(V)VR
2
2
2
2
2
2
2
2
ToprMax.(°C)
70
70
70
70
70
70
75
75
(mA)ITH
30
20
20
18
20
18
10
10
Iop(mA)
40
30
28
30
28
30
17
15
Vop(V)
2.3
2.3
2.3
1.9
2.3
1.9
2.3
1.9
(mA)Im
0.15
0.15
0.14
0.25
0.14
0.25
0.12
0.15
θ//(deg)
8
8
8
10
8
10
27
32
7
5
5
5
5
5
5
5
(deg)θ
27
27
27
32
27
32
10
10
655
785
662
785
7
7
20
20
2
2
2
2
85
85
70
70
30
25
22
22
45
45
40
45
2.0
1.8
2.3
1.8
0.12
0.22
0.2
0.25
8
10
10
10
5
5
15
15
27
32
20
17
(3)
LD
PD
(1)(2)
4PIN frame
(4)
650nmLD
PD
(1)
(2)780nmLD
(3)
(4)
650nmLD
PD
(1)
(2)780nmLD
(3)
(2)
650nmLD
780nmLD
PD
(1)(4)(3)
Equivalent circuitPackagePart No.
Absolute maximum ratings(Tc=25°C) Electrical and characteristics(Tc=25°C)
λp(nm)
WavelengthPo
(mW)
: Under development Note) Unless otherwise specified, the electrical and optical characteristics are typical values.
12
780nm High Power Lasers780nm High Power Lasers
Low operating current (High temperature operation characteristics)
Lineup
・CD-Rs・Sensors・Combos
・High COD・Low noise design
Optimized active layer design improvesbreakdown resistance.
Optimization of the active layer design reduces the concentration of the optical density distribution inside elements - one of the leading causes of breakdown. As a result, the COD level is improved by approximately 20% compared to conventional products
Dimensions
Tolerance is ±0.1, unless otherwise specified.
(2) (3)(1)
● High radiation frameTOP VIEW
1.6
0.4
0.7
2-R0.5
0.2350.2350.2350.2350.235(Emitting point:Y)
5.153.6
2.752.10.
450.8
3.0
1.3
3-0.4
0.45(Emitting point:Z)
0.853.41.5
1.45
1.0
5.0
90°±2°
�3.6
�1.0
min
.0.4±0.1
1.0 ±
0.1 �4
.4�0
(3)
(1)
(2)
1.2 ±
0.1
6.5 ±
0.5
2.3 ±
0.5
Opt
ical d
istan
ce1.
35±0
.1
3-�0.45
�0�0.025�5.6
Laser chip
● �5.6mm (Open packaging spec②)TOP VIEW
Tolerance is ±0.1, unless otherwise specified.(Unit : mm)
Opt
ical
Den
sity
Central Position
New Product
Opt
ical
Out
put 20%UP
Forward Current
Conventional Product
Well Layer
Guide LayerGuide Layer
Clad LayerClad Layer
Ref
ract
ive
Inde
x
Film Thickness
Conventional ProductNew Product
Feature Summary Applications
High radiation frame
RLD2WMGZ4(1)
(2)
780nm LD
650nm LD(3)
RLD78PPY6�5.6mm
(Open package spec②)
RLD78PPY4
785
785
(V)VR
2
2
ToprMax.��C)
75
75
(mA)ITH
35
35
Iop(mA)
160
130
Vop(V)
2.1
2.0
θ//(deg)
8.0
8.0
(deg)θ
16.5
16.5
120
90
(mA)Im
�
�
655
782
2
2
75
75
25
35
30
130
2.3
1.9
10.5
8.0
24.0
16.5
5
90
�
�
10
240
(mW)Po
280
240(Pulse)
(Pulse)
(Pulse)
LD
(3)(1)(2)
Equivalent circuitPackagePart No.
Absolute maximum ratings(Tc=25°C)
λp(nm)
Po(mW)
: Under development Note) Unless otherwise specified, the electrical and optical characteristics are typical values.
Electrical and characteristics(Tc=25°C)
13
Feature Summary Applications
Lineup
A PPS resin package is used featuring superior dimensional stability and wide interchangeability with conventional 5.6mm industry standard package types.As a result, replacement is simplified. In addition, the palladium plating at the pins reduce discoloration and degradation.
780nm Low Power Lasers780nm Low Power Lasers
Highly compatible φ5.6 mm resin package (RLD78MRA1)
CD-ROMsCD playersSensorsCombos
・Low infrared output・Low noise・Resin package
Excellent market results underline their highreliability. The wide lineup is optimized for avariety of needs.
Dimensions5.0±0.05
2.4±0.03
13
2 � 4.4
max
.4.
4max
.
�5.6�0.0
�0.025
� 3.63.6
� 2±0
.2
90°±2°
0.5ma
x.
�1.6�1min.
1.35±0.1
�1.2max.1.2max.
6.5±
0.5
Laser chip
3-�0.45
Sub-mount
1.2±
0.1
2.3±
0.5
● �5.6mm (Open packaging spec①)TOP VIEW
4.9 �5.62
0.4
5
0.4
0.22
0.621.5
0.82
5.0 1.6 1.5 0.73.2
Optical distance
1.35±0.1
3-0.55max
3-0.4(2)(2) (3)(3)
1.61.6(1)(1)
1
(1)
0.62
● �5.6mm (Compatible frame)TOP VIEW
Easy ReplacementEasy Replacement
(Unit : mm)
φ5.6mm(Open package spec①)
RLD78MPA1
φ5.6mm(Compatible frame)
RLD78MRA1
λp(nm)
Wavelength
785
785
(mW)Po
5
4.5
(V)VR
2
2
ToprMax.(°C)
70
70
(mA)ITH
35
35
Iop(mA)
45
45
Vop(V)
1.9
1.9
θ//(deg)
11
11
(deg)θ
37
37
3
3
(mA)Im
0.15
0.15
(3)
LD
PD
(1)
(2)
Equivalent circuitPackagePart No.
Absolute maximum ratings(Tc=25°C) Electrical and characteristics(Tc=25°C)
Po(mW)
Note) Unless otherwise specified, the electrical and optical characteristics are typical values.
14
Lineup
●Low droop characteristics No light absorption by the current block layer ensures high laser efficiency.●High breakdown resistance The light-emitting region expands laterally and the optical density becomes lower, increasing the COD level.
780nm High Speed Lasers780nm High Speed Lasers
Low droop characteristics contribute to high image quality
Laser printersLaser imaging applications
・High-speed infrared response・Industry standard φ5.6 mm diameter ・Low droop characteristics
These laser diodes are not only widely used aslight sources in laser printers, they provide theoptimal solution for a variety of applications asgeneral.
Dimensions 90°±2°
�3.6
�1.0
min
.0.4±0.1
1.0 ±
0.1 �4
.4+0
(3)
(1)
(2)
1.2 ±
0.1
6.5 ±
0.5
2.3 ±
0.5
Opt
ical d
istan
ce1.
35±0
.1
3-�0.45
�0�0.025�5.6
Laser chip
Cover glass
● �5.6mmTOP VIEW
Conventional Printer Device(Absorption Loss Waveguide Structure)
Our Product(Actual Refractive Index Waveguide Structure)
25
20
15
10
5
00 2 4 6 8
At 60℃
At 25℃
Optical Output (mW)
Dro
op (%
)
Droop Characteristics
Light is absorbed (lost)
No Absorption
Current blocklayer
Light-emittingRegion
(Unit : mm)
New Product:RLD78NZM1Conventional Product:RLD78NZH4
Feature Summary Applications
φ5.6mm
φ5.6mm
φ5.6mm
RLD78NZH2
RLD78NZH1
785
785
(mW)Po
10
5
(V)VR
2
2
Topr Max.(°C)
60
60
(mA)ITH
20
20
Iop(mA)
35
27
Vop(V)
1.9
1.9
(mA)Im
0.35
0.35
θ//(deg)
11
11
6
3
(deg)θ
28
28
LD
(3)
PD
(1)
(2)
RLD78NZM1 785 10 2 60 10 20 1.9 1.0 9 628
φ
Equivalent circuitPackagePart No.
Absolute maximum ratings(Tc=25°C) Electrical and characteristics(Tc=25°C)
λp(nm)
WavelengthPo
(mW)
: Under development Note) Unless otherwise specified, the electrical and optical characteristics are typical values.
Optoelectronics 2007-Oct.2007-Oct.
-Laser Diodes
Laser DiodesLaser Diodes
Catalog No.50P5817E 10.2007 ROHM © TSU
1st. Oct. 2007.
Product Catalog
www.rohm.com
■ Safety
■ Packaging Specifications (Unit : mm)
DIRECT EXPOSURE TO BEAMINVISIBLE LASER RADIATION-AVOID
MAXIMUM OUTPUTWAVELENGTH
b LASER PRODUCTCLASS
Part 1040.10 and 1040.11This product complies with 21 CFR
615, Japan.
ROHM CO.,LTD.21.Saiin Mizosaki-cho. Ukyo-ku Kyoto
mWnm
Laser Diode
from this aperture
AVOID EXPOSURE-lnvisibleLaser radiation is emitted
SEMICONDUCTOR LASERINVISIBLEThe light emitted from laser diodes, while almost invisible to the human
eye, can cause retinal damage if viewed directly. Never look directly into the laser beam or through any lenses or fibers when the system is operating.
For optical axis alignment or other operations, we recommend the use of an infrared-sensitive camera (ITV) or wearing protective goggles.
The products described in this specification are designed to be used with ordinary electronic equipment or devices (such as audio-visual equipment, office-automation equipment, communication device, electrical appliances, and electronic toys). If you intend to use these products or devices which require an extremely high level of reliability and malfunction of which would directly endanger human life (such as medical instruments. transportation equipment, aerospace machinery, nuclear-reactor controllers, fuel controllers and other safety devices), please be sure to consult with our sales representative in advance.
Explanation labelSafety standard(JIS C6802)
Tray Box
Productpackage
High radiation
frame
W
156 163 7
L H
(High radiation frame)
7
156
163
118
16
Antistatic laminatevacuum bag
75
Explanation labelSafety standard(JIS C6802)
Tray
120
Box
96
86Productpackage
�5.6
W
86 118 16
L H
(Other)
Quantity per unit(pcs/tray)Case
Vacuum packItem packaging
Tray
Packaging style
200 1000
Basic ordering unit(pcs)
240
Weight[g]
Quantity per unit(pcs/tray)Case
Vacuum packItem packaging
Tray
Packaging style
100 500
Basic ordering unit(pcs)
250
Weight[g]
170
27
160(Unit : mm)
(Unit : mm)
(Unit:mm) (Unit:mm)