©2000 Fairchild Semiconductor International Rev. A, February 2000

KS

D5

703

NPN Triple Diffused Planar Silicon Transistor

Absolute Maximum Ratings TC=25°C unless otherwise noted

Electrical Characteristics TC=25°C unless otherwise noted

Symbol Parameter Value Units

VCBO Collector-Base Voltage 1500 V

VCEO Collector-Emitter Voltage 800 V

VEBO Emitter-Base Voltage 6 V

IC Collector Current (DC) 10 A

ICP Collector Current (Pulse) 30 A

PC Collector Dissipation (TC=25°C) 70 W

TJ Junction Temperature 150 °CTSTG Storage Temperature - 55 ~ 150 °C

Symbol Parameter Test Condition Min. Typ. Max. Units

ICES Collector Cut-off Current VCE = 1400V, VBE=0 1 mA

ICBO Collector Cut-off Current VCB = 800V, IE = 0 10 µA

IEBO Emitter Cut-off Current VEB = 4V, IC = 0 1 mA

hFE1hFE2

DC Current Gain VCE = 5V, IC = 1AVCE = 5V, IC = 8A

155.3

407.3

VCE(sat) Collector-Emitter Saturation Voltage IC = 8A, IB = 1.6A 5 V

VBE(sat) Base-Emitter Saturation Voltage IC = 8A, IB = 1.6A 1.5 V

tF Fall Time VCC = 200V, IC = 6AIB1 = 1.2A, IB2= - 2.4ARL = 33.3Ω

0.1 0.3 µs

KSD5703

High Voltage Color Display Horizontal Deflection Output (No Damper Diode)• High Collector-Base Voltage : VCBO=1500V• High Switching Speed tF = 0.3µs (Max.)• For Color TV

TO-3PF

1.Base 2.Collector 3.Emitter1

©2000 Fairchild Semiconductor International

KS

D5

703

Rev. A, February 2000

Typical Characteristics

Figure 1. Static Characteristic Figure 2. DC current Gain

Figure 3. Collector-Emitter Saturation Voltage Figure 4. Base-Emitter On Voltage

Figure 5. Switching Time Figure 6. Switching Time

0 2 4 6 8 100

2

4

6

8

10

IB = 1.0AIB = 1.2A

IB = 0.8A

IB = 1.8AIB = 1.6A

IB = 1.4A

IB = 2.0A

IB = 0.6A

IB = 0.4A

IB = 0.2A

I C[A

], C

OL

LE

CT

OR

CU

RR

EN

T

VCE[V], COLLECTOR-EMITTER VOLTAGE

0.1 1 101

10

100

VCE = 5V

hF

E,

DC

CU

RR

EN

T G

AIN

IC[A], COLLECTOR CURRENT

0.1 1 100.01

0.1

1

10

IC = 3IB

IC = 5IB

VC

E(s

at)

[V],

SA

TU

RA

TIO

N V

OL

TA

GE

IC[A], COLLECTOR CURRENT

0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.00

2

4

6

8

10

VCE = 5V

I C

[A],

CO

LLE

CT

OR

CU

RR

EN

T

VBE[V], BASE-EMITTER VOLTAGE

0.0 0.4 0.8 1.2 1.6 2.0 2.40.0

0.2

0.4

0.6

0.8

1.0

Icp/IB = 5

fH = 15.75kHz

TC = 25oC

IC = 5.5A

IC = 5.5A

IC = 5.0A

IC = 5.0A

IC = 4.5A

IC = 4.5A

t ST

G [µ

s],

ST

OR

AG

E T

IME

tF

tSTG

t F [

µs], C

OL

LEC

TO

R C

UR

RE

NT

FA

LL T

IME

dIB/dt[A/µs], BASE CURRENT GRADIENT

0

2

4

6

8

10

0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.10.0

0.2

0.4

0.6

0.8

IC = 5.5A

IC = 5.5A

IC = 5.0A

IC = 5.0A

IC = 4.5A

IC = 4.5A

t ST

G [µ

s],

ST

OR

AG

E T

IME

tF

tSTG

t F [

µs], C

OL

LEC

TO

R C

UR

RE

NT

FA

LL T

IME

IB1[A], BASE CURRENT

1

2

3

4

5

©2000 Fairchild Semiconductor International

KS

D5

703

Rev. A, February 2000

Typical Characteristics (Continued)

Figure 7. Safe Operating Area Figure 8. Reverse Bias Operating Area

Figure 9. Power Derating

1 10 100 1000 100000.01

0.1

1

10

100

IC MAX

SINGLE PULSE

TC = 25oC

300µs

DC

100µs10ms 1m

s

I C[A

], C

OL

LE

CT

OR

CU

RR

EN

T

VCE[V], COLLECTOR-EMITTER VOLTAGE

10 100 1000 100000.1

1

10

100

IC = 5IB1 = 5IB2

L = 500µH

SINGLE PULSE

IB2 = -1A

CONSTANT

I C[A

], C

OL

LEC

TO

R C

UR

RE

NT

VCE[V], COLLECTOR-EMITTER VOLTAGE

0 25 50 75 100 125 150 1750

10

20

30

40

50

60

70

80

PC[W

], P

OW

ER

DIS

SIP

AT

ION

TC[oC], CASE TEMPERATURE

15.50 ±0.20 ø3.60 ±0.20

26.5

0 ±0

.20

4.50

±0.

20

10.0

0 ±0

.20

16.5

0 ±0

.20

10°

16.5

0 ±0

.20

22.0

0 ±0

.20

23.0

0 ±0

.20

1.50

±0.

20

14.5

0 ±0

.20

2.00

±0.

20

2.00 ±0.20

2.00 ±0.20

0.85 ±0.03

2.00 ±0.20

5.50 ±0.20

3.00 ±0.20

(1.50)

3.30 ±0.20

2.00 ±0.20

4.00 ±0.20

2.50

±0.

20

14.8

0 ±0

.20

3.30

±0.

20

2.00

±0.

20

5.50

±0.

20

0.75+0.20–0.10

0.90+0.20–0.10

5.45TYP[5.45 ±0.30]

5.45TYP[5.45 ±0.30]

TO-3PF

Package Demensions

©2000 Fairchild Semiconductor International Rev. A, February 2000

KS

D5

703

Dimensions in Millimeters

©2000 Fairchild Semiconductor International Rev. E

TRADEMARKS

The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and isnot intended to be an exhaustive list of all such trademarks.

ACEx™Bottomless™CoolFET™CROSSVOLT™E2CMOS™FACT™FACT Quiet Series™FAST®

FASTr™GTO™

HiSeC™ISOPLANAR™MICROWIRE™POP™PowerTrench®

QFET™QS™Quiet Series™SuperSOT™-3SuperSOT™-6

SuperSOT™-8SyncFET™TinyLogic™UHC™VCX™

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2. A critical component is any component of a life supportdevice or system whose failure to perform can bereasonably expected to cause the failure of the life supportdevice or system, or to affect its safety or effectiveness.

PRODUCT STATUS DEFINITIONS

Definition of Terms

Datasheet Identification Product Status Definition

Advance Information Formative or In Design

This datasheet contains the design specifications forproduct development. Specifications may change inany manner without notice.

Preliminary First Production This datasheet contains preliminary data, andsupplementary data will be published at a later date.Fairchild Semiconductor reserves the right to makechanges at any time without notice in order to improvedesign.

No Identification Needed Full Production This datasheet contains final specifications. FairchildSemiconductor reserves the right to make changes atany time without notice in order to improve design.

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