Klystron Modulator R&D at KEK Files... · Blumlein Modulator #l (in Air) Main Parameters Klystron...
Transcript of Klystron Modulator R&D at KEK Files... · Blumlein Modulator #l (in Air) Main Parameters Klystron...
Klystron Modulator R&D at KEK
Blumlein Modulator R&D Status
l Modulator modification(Pulse flat-top width to >l.$s)_--_.-_ .- .._- Two parallel Blumlein PFks -_’ -- ‘-
_ .-.. ._~ . .._ -- .-,-..._... 1
- ModificationPulse transformer( 1: 8)Charging transformer
l Modulator test . . _- Pulse width : 3~s- Rise time l -6OOns( lo-90%).- Fall time l -700ns( lo-90%).- Flat-top width : 2jAs(p-p 3%)- Efficiency
Pulse power transfer Eff. : ~75%Waveform Eff. l w74%.
Blumlein Modulator #l(in Air)
Main Parameters
KlystronOutput powerRF pulse widthEficiencyPerveanceBeam voltageRepetition rate
ModultorSec. voltage(Max)Sec. current(Max.)Sec. impedancePulse widthFlat-top widthRise time
Pulse TransformetStep-up ratio
Blumlein PFNPFN impedance/lineNo. of s&tionsInductance/sectionCapacitance/sectionTotal capacitanceCharging Voltage
Tlwra tronAnode voltageAnode current
unit
MW 127 127PS 0.4 1.5% 45 45
~LAIV”~ 1.2 1.2kV 560 560PPS 50 50
kV 560 560A 503 503i2 1113 111311s 0.8 2.411s 0.4 1.511s 350 400
1% 1:8
IR
PHnFnFkV
8.7 17.4(2par.)13 20(2par.)
0.265 1.063.5 3.591 28070 70
kV 70 70kA 8 8
Design Upgrade
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R&D Program
l Components R&D- Solid state switches- Energy storage capacitors- Pulse transformer
l Modulator Analvsis- Efficiencv- PFN design
l Modulator Layout- Size- Components arrangement
Solid State SI-Thyristor(under development)
l High on current (Peak current of >lOkA?)
l High hold-off voltage (5kV)
l Fast Turn on and Turn off (di/dt of > SOkA/ps?)
l Low switching losses(?)
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PULSED POWER DEVICES
High Power Fast STATIC INDUCTION THYRISTOR
Featuresl.Very small turn-on delay time2. Optimized for series connection3.Snubberless operation4.Optimized for low gate impedance and on-gate drive5.Very high EM1 immunity6.Low on-state and switching losses7.Available for high repetition rate operation&Reverse conducting type (including freewheeling diode: SIED) ‘.S.Press-pack ceramic housinglO.High reliability
NGK INSULATOR,LTD.,2-56 Suda-cho,Mizuho-ku,Nagoya,467-8530 JapanTel:+81-52-872-7097, Fax:+Bl-52-872-7499, E-mail : [email protected]
Performanc_
Item
V D R M
Vdc(max)Itsmdi/dt
nib=>Frequency
FmWeight
Rthjf SIThyRthjf SIED
PULSED POWER DEVICES
pizq.
of Key Parameters ’Q-w
RS1600PA40Tl
4ooov0.85VDRM
3okAl75 lLs~55kALuS
125°CRepetitiveCooling for repetitiveswitching is required
3okN0.73kg
&025”c/Wo.o35”c/w
2 center holesQ 3.2kO.151.5&0.2 deep
4 6OkO.2I I
RS 1600PA55Tl
5500v0.85vDRM
3okfU75 ,usL68kAlll s
125°CRepetitive
Cooling for repetitiveswitching is required
3okN0.73kg
O.O25=‘C/W0.035”c /w
G
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Symbol
Hk
G
A = Anode
K = Cathode
G = Gate
I $J 92 max1
Hk = Auxiliary Cathode
Dimensions in mm
NGK INSULATORS, LTD.
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current probe ,insulator
return conductorGND electrode
fHV electrode SI thyristor
Fig.1 The schematic view of the testing circuit.
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Fig.2 The equivalent circuit ofthe testing apparatus.
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Fig.3 Typical experimental result.
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SH-type capacitor for PFNKEK&Nichicon Corporation
Energy Density (D)
D w=LE2q-- - [J/d]v 2
W :Stored Energy(J)V :Case Volume(m3)& :Dielectric constant(F/m)
E=EoEr,Eo=8.84xl o-l2F/mE :Electric field strength(V/m)
r\ :Packing factor
NH-type: E-6OV/pm, D-9kJ/m3
SH-type: E-13OV/pm, D-19kJ/m3
Schedule:
l)Life test under operation
2)Low inductance and more compact sizeNo bushing capacitor with plastic case
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Capacitor construction
(1) No-Healing(NH)-typeAI-foiL7pm
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(2) Self-Healing(SH)-typeptQ$&p4 4;lm
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JLC-ATF -