Disclosure to Promote the Right To Information

Whereas the Parliament of India has set out to provide a practical regime of right to information for citizens to secure access to information under the control of public authorities, in order to promote transparency and accountability in the working of every public authority, and whereas the attached publication of the Bureau of Indian Standards is of particular interest to the public, particularly disadvantaged communities and those engaged in the pursuit of education and knowledge, the attached public safety standard is made available to promote the timely dissemination of this information in an accurate manner to the public.

इंटरनेट मानक

“!ान $ एक न' भारत का +नम-ण”Satyanarayan Gangaram Pitroda

“Invent a New India Using Knowledge”

“प0रा1 को छोड न' 5 तरफ”Jawaharlal Nehru

“Step Out From the Old to the New”

“जान1 का अ+धकार, जी1 का अ+धकार”Mazdoor Kisan Shakti Sangathan

“The Right to Information, The Right to Live”

“!ान एक ऐसा खजाना > जो कभी च0राया नहB जा सकता है”Bhartṛhari—Nītiśatakam

“Knowledge is such a treasure which cannot be stolen”

“Invent a New India Using Knowledge”

है”ह”ह

IS/QC 750102 (1989): Semiconductor Devices - DiscreteDevices - Bipolar Transistors Blank Detail Ambient-RatedBipolar Transistors for Low and High-FrequencyAmplification [LITD 5: Semiconductor and Other ElectronicComponents and Devices]

1s QC 750102 : 1989 IEC QC 750102 : 1989

INDIAN STANDARD

SEMICONDUCTOR DEVICES -

DISCRETE DEVICES -BIPOLAR TRANSISTORS

Blank Detail Specification

for Ambient-Rated Bipolar Transistors for

Low and High-Frequency Amplification

NATIONAL FOREWORD

This Indian Standard, which is identical with IEC Pub 747-7-l /QC 750102 (1989) ‘Semiconductor devices - Discrete devices, Part !:‘Bipolar transistors, Section One - Blank detail specification for ambient-rated bipolar transistors for low and high-frequency amplification’, issued by the International Electrotechnical

Commission was adopted by the Bureau of Indian Standards on 6 November 1989 on the recommendations of the Semiconductor Devices and Integrated Circuits Sectional Committee (LTD 10) and approval of the Electronics and Telecommunication Division Council.

Wherever the words ‘International Standard’ appear, referring to this standard, they should be read as ‘Indian Standard’.

CROSS REFERENCES

In this Indian Standard, the following International Standards are referred to. Read in their respective place the following :

International Standard

IEC Pub 747-lO/QC 700000 (1984) IS QC 700000 : Semiconductor Semiconductor devices, Part 10 : devices : Generic specification for Generic specification for discrete discrete devices and integrated cir- devices and integrated circuits cuits

IEC Pub 747-l l/QC 750100 (1985) Semiconductor devices, Part 11 : Sectional specification for discrete devices

IS QC 750100 : Semiconductor devices : Sectional specification for discrete devices

Indian Standard Degree of Correspondence

Identical

Identical

The technical committee responsible for the preparation of this standard has reviewed the provisions of the fOlbWing International Publications and.has decided that they are acceptable for use in conjunction with this standard :

IECmPub 68-2-17 (1978) Basic environmental testing procedures, Part 2 : Test. Test Q : Sealing

IEC,Pub 191-2 (1966) Mechanical standardization of semiconductor devices, Part 2 : Dimensions (under revision)

IEC’Pub 747-2 (1983) Semiconductor devices-Discrete devices and integrated circuits, Part 2: Rectifier diodes

k3 QC 750102 : 1989 IEC QC 750102 : 1989

IEC Pub 747-7 (1988) Semiconductor discrete devices, and integrated circuits, Part 7 : Bipolar transistors

IEC Pub 749 (1984) Semiconductor devices - Mechanical and climatic test methods

This standard is intended primarily for use under the IECQ System. A regular Indian Standard for this component could be different, identical or similar to this standard.

Only the English language text in the International Standard has been retained while adopting it in this Indian Standard.

2

IS QC 750102 : 1989 IEC QC 750102 : 1989

The I EC Quality Assessment System for Electronic Components is operated in accordance with the statutes of the IEC and under the authority of the I EC. The object of this system is to define quality assessment procedures in such a manner that electronic components released by one participatrhg country as conforming with the requirements of an applicable specification are equally acceptable in all other participating countries without the need for further testing.

This blank detail specification is one of a series of blank detail specifications for semiconductor devices and shall be used with the following IEC publications:

- 747-lO/QC 700000 (1984):

- 747-ll/QC 750100 (1985):

Semiconductor devices, Part 10: Generic specification for discrete devices and integrated circuits.

Semiconductor devices, Part 11: Sectional specification for discrete devices.

Required information

Numbers shown in brackets on this and the following pages correspond to the following _ items of required information, which shall be entered in the spaces provided.

Identification of .the detail specification

PI

PI

131

r41

The name of the National Standards Organization under whose authority the detail specification is issued.

The IECQ number of the detail specification.

The numbers and issue numbers of the generic and sectional specifications.

The national number of the detail specification, date of issue and any further information required by the national system..

IdentiJcation of the component

[5] Type of component.

[6] Information on typical construction ano appli&trolis. If a device is designed to satisfy several applications, this shall be stated here. Characteristics, li,mits and inspection

3

iSQC750102:1989 IEC QC 750102:1989

requirements for these applications shall be met. If a device is electrostatic ‘sensitive, or contains hazardous material, e.g. beryllium oxide, a caution statement shall be added in the detail specification.

[7] Outline drawing and/or reference to the relevant standard for outlines.

!8] Category of assessed quality.

:9] Reference data on the most important properties to permit comparison between component types.

[Throughout this standard, the texts given in square brackets are intended for guidance to the specification writer and shall not be included in the detail specification.] [Throughout this standard, when a characteristic or rating applies, “x” denotes that a value shall be inserted in the detail specification:]

IS QC 750102 : 1989 IEC QC 750102 : 1989

[Name (address) of responsible NAI [l] [Number of IECQ detail specification, [2] (and possibly of body from which specification is available).] plus issue number and/or da&e.]

QC 750102 - . . .

ELECTRONIC COMPONENT OF ASSESSED QUALITY IN ACCORDANCE WITH: Generic specification: Publication 747-10 / QC 7ooOOO Sectional specification: Publication 747-l 1 / QC 750100 [and national references if different.]

[3] [National number of detail specification.] M rhis box need not be used if the National number repeats IECQ number.]

DE&L SPECIFICATION FOR: pype number(s) of the relevant device(s).] Ordering information: see Clause 7 of this standard.

1. Mechanical description 2. Short description

Ourline references: [71 Ambient-rated bipolar transistors for: PI IEC 191-2 [mandatory if available] and/or national l Low-frequency amp!ification (LF)

[if there is no IEC outline.] l High-frequency amplification (HF) Semiconductor material: [Si]

Outline drawing Encapsulation: [cavity or non-cavity.]

[may be transferred to or given with more details in Clause 10 Application(s): see Clause 5 of this standard.

of this standard.] Caution. Observe precautions for handling ELECTROSTATIC SENSITIVE DEVICES [if applicable.]

Terminal identification [drawing showing pin assignments, including graphical symbols.]

3. Categories of asses.4 quality

[From Sub-clause 2.6 of the geheric specification.] [g]

Reference data (91

Marking: [letters and figures, or colour code]. rhe detail specification shall prescribe the information to be marked on the device, if any.] [See Sub-clause 2.5 of generic specification and/or Clause 6 of this standard.] [Polarity indication, if a special method is used.]

Information about manufacturers who have components qualified to this detail specification is available in the current Qualified Products List.

5

IS QC 750102, : 1989 IEC QC 750102 : 1989

4. Limiting values (absolute maximum’ rating system)

These values apply over the operating temperature range unless otherwise specified.

[Repeat only sub-clause numbers used, with title. Any additional values shall be given at the appropriate place, but without sub-clause number(s).]

[Curves should preferably be given under Clause 10 of this standard.]

ub-clause Parameters Value

Symbol min. max.

4.1 Ambient temperatures T amb x x

4.2 Storage temperatures T *P x x

4.3 Collector-base voltage: VCBO x Maximum collector-base (d.c.) voltage

4.4 Collector-emitter voltage: One (preferably V,,) or more of the following shall be specified:

Maximum collector-emitter (dx.) voltage with zero base current VCEO x

Maximum collector-emitter (d.c.) voltage with specified reverse base voltage VW x

Maximum collector-emitter (d.c.) voltage with base short-circuited to emitter V,, x

Maximum collector-emitter (d.c.) voltage with specified external resistance Rss V,ss x

4.5 Emitter-base voltage: f%o x Maximum emitter-base (d.c.) reverse voltage

4.6 Maximum collector (d.c.) current & x

4.7 Power dissipation: Any special requirements for ventilation/mounting shall be specified

4.7.1 Maximum total power dissipation as a’ function of ambient temperature, o P, = f (r) x

4.7.2 Maximum virtual (equivalent) junction temperature and absolute limit of 4W x power dissipation P m x

Electrical characteristics

See Clause 8 of this standard for inspection requirements.

[Repeat only sub-clause numbers used, with title. Any additional characteristics shall be given at appropriate place but without sub-clause number(s).]

[When several devices are defined in the same detail specification, the relevant values shall be given on successive lines, avoiding repeating identical values.]

[Curves s~hould preferably be given under Clause 10 of this standard.]

6

iub-clause

5.1

5.2

5.3

5.3.1

5.3.2

5.4

5.5

5.6

5.1

Note. - The ratio is de.fined by

Characteristics and conditions at x,, = 25 “C unless otherwise specified.

(see Clause 4 of the generic specification)

Minimum value of the common-emitter static forward current transfer ratio at specified Vc, and Ic (or Vc, and fE), preferably at typical operating current (d.c. or pulse, as spekified)

Where appropriate: Maximum value of common-emitter static forward current transfer ratio under the same con- ditions as in Sub-clause 5.1 (d.c. or pulse, as specified)

Where appropriate: Minimum value of the common-emit- ter static forward current transfer ratio (d.c. or pulse, as specified):

- for large-signal devices (drivers): at low Vc, and high k

- for small-signal devices (preamplifiers): at specified V,, and low Ic

For matched-pair transistors contained in the same case or encapsulation: Ratio of static values of common-emit- ter forward current transfer ratio, at specified Vc, and I,, preferably at typical operating voltage and current (note)

Minimum transition frequency at specified V,,, I, and /

Where appropriate: Maximum transition frequency under the same conditions as in Sub-clause 5.5

Cut-off currents: At least one (preferably, I,) of the following shall be specified: Maximum collector-base cut-off current with the emitter open-circuited, preferably at maximum rated Vc,,

Maximum collector-emitter cut-off current ur$er speci- fied base-emitter bias conditions, preferably at maximum rated VCEX

Maximum collector-emitter cut-offcurrent with specified base-emitter resistance, preferably at maximum rated V CER

Maximum collector-emitter cut-off current with the base short-circuited to the emitter, preferably at maximum rated VcEs

Maximum collector-emitter cut-off current with the base open-circuited, preferably at maximum rated Vc,

smaller value

larger value

IS QC 750102:1989 IEC QC 750102 :1989

LF -

nin

-

X

X

X

X

X

HF - nin

-

X

X

X

X

Tested

A2b

A2b

C2b

C2b

A2b

C2a A4

A4

A2b

A2b

A2b

A2b

A2b

i

IS QC 750102 : 1989 IEC QC 750102:1989

ub clause

5.8

5.9

5.10

5.11

5.12

5.13

5.14

5.15

5.16

5.17

5.18

Characteristics and conditions,at Ems = 25 “C unless otherwise specified

(see Clause 4 of the generic specification)

Cut-off currents at high temperature: At least one (preferably Zcso) of the following shall be specified: Maximum collector-base cut-off current at V,, preferably between 65% and 85% of maximum rated V,,,, Is = 0 and at a high temperature

Maximum collector-emitter cut-off current under speci- fied base-emitter bias conditions, at Vc, preferably be- tween -65% and 85% of maximum rated Vc,, and at a high temperature

Maximum collector-emitter cut-off current with specified base-emitter resistance, at Vc, preferably between 65% and 85% of maximum rated Vc,, and at a high tempera- ture

Maximum collector-emitter cut-off current with the base short-circuited to the emitter, at V,, preferably between 65% and 85% of maximum rated Vc, and at a high temperature

Maximum collector-emitter cut-off current with the base open-circuited, at V,, preferably between 65% and 85% of maximum rated V,,, and at a high temperature

Maximum emitter-base cut-off current at V,, between 50% and 100% of maximum rated V’s,,, Ic = 0

Where appropriate: Maximum base-emitter voltage, pre- ferably specified under the same conditions as in Sub- clause 5.1 (d.c. or pu$, as specified)

For matched-pair transistors contained in the same case or encapsulation: Difference between base-emitter vol-

h tages, under -the same conditions as for 2

For matched-pair transistors contuined in the same case or encapsulation: Change in the difference between base- emitter voltages between T, = 25°C and a specified high

Z&l temperature 4, under the same conditions as for -

Where appropriate: Minimum and, where appropriate, maximum value of the commonemitter small-signal for- ward current transfer ratio at specified V,, and Zc, /- 1 kHz

For low-noise types: Maximum noise factor, under speci- fied conditions at specified Vc, and Ic

Maximum common-base output capacitance at specified

Vcs, ZE - O,f- 1 MHz

Where appropriate: Maximum common-emitter reverse transfer capacitance with I. - 0 and specified V,, and f (1 MHz preferred)

Where appropriate: Maximum reverse transfer time con- stant with specified Za, Vc, and f

When virtual junction temperature is quoted as a rating: Maximum value of thermal resistance junction-to-ambient (not verified under inspection requirements)

LF l- - nin

-

x

-

- lax.

-

x

x

x

x

x

x

x

x

x

x

x

x

x

x

-

HF -

tin

-

-

- Iax

-

x

x

x

x

x

x

x

x

x

x

x

x

-

T

C2b

C2b

C2b

C2b

C2b

A2b

A2b

A2b

C2b

A3

A4

C2a

C2a

C2a

8

/ sj

-.

IS QC 750102 : 1989 IEC QC 750102 : 1989

6. Marking

[Any particular information other than that given in box @ (Clause 1) and/or Sub- clause 2.5 of the generic specification shall be given here.]

7. Ordering information

[The following minimum information is necessary to order a specific device. unless otherwise specified:

- precise type reference (and nominal voltage value, if required);

- IECQ reference of detail specification with issue number and/or date when relevant;

- category of assessed quality as defined in Sub-clause 3.7 of sectional specification and, if required, screening sequence as defined in Sub-clause 3.6 of sectional specification;

- any other particulars.]

8. Test conditions and inspection requirements

[These are given in the following tables, where the values and exact test conditions to be used shall be specified as required for a given type, and as required by the relevant test in the relevant publication.]

[The choice between alternative tests or test methods shall be made when a detail specification is written.]

[When several devices are included in the same detail specification, the relevant conditions and/or values should be given on successive lines, avoiding, where possible, repeating identical conditions and/or values.]

Throughout the fallowing text, reference to sub-clause numbers is made with respect to the generic specification, unless otherwise stated, and test methods are quoted from Clause 4 of the sectional specification.

[For sa-mpling requirements, either refer to, or reproduce, values of Sub-clause 3.7 of sectional specification. according to applicable category(ies) of assessed quality.]

[For group A, the ehoiee between A&L or LTPD Systems shall be made in the detail

specification.]

9

IS QC 750102 : 1989 IEC QC 7W102 : 1989

GROUP A

Lot by lot

All tests are nondestructive (3.6.6)

Inspection or test

Sub-group Al External visual examination

Conditions at T,,, - 25 “C Inspection requirement

limits

Symbol Ref. unless otherwise specified (see Clause 4 of the LF HF generic specification)

min. max. min. max

‘5.1.1

Sub-group A2a Inoperative devices

Shor?-circuit, i. e. : 0 cut-off current 3 100

times the cut-off current shown in A2b

Open-circuit, i. e.: l hr,,,,( 5,

unless otherwise specifiec

Sub-group A2b Cut-off currents At least one of the following: Collector-base cut-off current LCil, T-001 I’,,, _ [preferably Vcs, max.], X X

1, - 0

Collectoremitter cut-off current, kW T-009 Vex = [preferably Vcax max.], X X I’s, = [X specified]

Collector-emitter cut-off current ICE,,, T-009 Vca - [preferably ‘I’,,, max.], X X R, = [R specified]

Collectorcmitter cut-off current fcaw T-009 Vc, - [preferably I’,, max.], X x V,, = 0

Collector-emitter cutoff current Icwo, T-909 Vex = [preferably Vcao max.], X X I, = 0

Static value of common-emitter /rrm,, T-006 I’,,,( Vcs) = [specified], x x x X forward current transfer ratio I&I,) = [specified (preferably (note 2) (note 2

typical value), dc. or pulse as specified (note l)]

For matched-pair transistors gz _,lg@ T-031 V,, - [specified], Ic - [speci- x contained in the same case or encapsulation: Ratio of static h2 IE(Z)

fied (preferably at typical operating voltage and current)]

values of common-emitter for- ward current transfer ratios’

Emitter-base cutoff current

Where appropriate: Base-emit- pr voltage 1

&so T-002 V,, = [between 50% and 100% X x of v, max.], Ic = 0

VEZ T-005 [Referably same as for ,+rrml, X x in A2b (dc. or pulse, as speci- fied) (note 1)]

For matched-pair transistors I&,- v., T-032 . Vi, = [spectfied] IC = [specified X mntained in the same case or (preferably at typical operating mcapsulation: Difference be- voltage and current)] .ween base-emitter voltages

Notes 1. - gee relevant conditions under Characteristics. If pulse measurement is used, the conditions should preferably be: pulse-width 4 - 300 us, duty factor S < 2%.

2. - Where appropriate.

10

IS QC 758102 : 1989 IEC QC 750102 : 1989

GROUP A (continued)

Inspsction requirement Conditions at Tmb - 25 ‘C limits

Inspection or test Symbol Ref. unless otherwise specified (see Clause 4 of the LF HF generic specification)

min. max. min. max.

Sub-group A3 Where appropriate: Small-signal b,, T-021 V&V& - [specified], x x value of commofi*mitter short- &(&) - [specified], (note 2) circuit forward ~rrent transfer /- 1 kHz ratio

Sub-group A4 Transition frequency

For low-noise types only:

Noise factor

fr T-041 V,(V& - [specified], x x

I,(&.) - [specified], [note 2

/ - [specified]

F T-008 v, - [specified],

fc - [specified] (& - [specified], - [I kHz, or as

specified]

!I

Note 2. - Where appropriate.

IS QC 750102:19%9 IEC OC 750102:1989

GROUP B

Lot by lot

(in the case of category I, see the generic specification, Subclause 2.6)

LSL - lower specification limit USL - upper specification limit from group A

Only tests marked (D) are destructive (3.6.6)

Inspection or test Symbol Ref.

Conditions at Tmb - 25 “C unless otherwise specified

(see Clause 4 of the generic specification)

Inspection require- ment limits

min. max.

sub-gmup BI Dimensions 4.2.2, [See Clause 1 of

APP. B this standard]

Subgrowp 83 Robustness of terminations Where applicable: l Bending (D) 749,

II, 1.2 Force - [see 749, II, 1.21 No damage

Subgmup 84 Solderability 749,

II, 2.1 [Solder bath preferred] Good wetting

sub-group BS Rapid change of temperature, 749, TA - Ts -

III, 1 number of cycles - followed by: a) For non-cavity devices - Damp 149, Test Db, variant 2, severity 55 “C.

heat, cyclic (D) III, 4 number of cycles -

w&h final measwements: [note 31 USL 0 cut-off current l forward current transfer ratio h2 uxu ISL USL

[note 41 b) For cavity devices

- Sealing 149, Subclause 7.2, 7.3 or 7.4 combined III, 7 with test Qc. 68-2-17

Subgroup B8 Electrical endurance (168 h)

with final measurements: 0 cut-off current 0 forward current transfer ratio

747.2, Reverse bias or: operating life V

I

[at high (Power dissipation - 80% to !:ll% temperature] of 8, max.)

[note 31 2USL

hr 16(l) 0.8 ISL 1.2USL [note 41

Subgroup CRRL Attributes information for B3, 84, BS and B8

Notes 3. - Specify one cut-off current from Subgroup AZb, preferably Icoor 4. - When given in A2b.

12

IS QC 750102:1989 IECQC 750102:1989

GROUP C

Periodic

LSL - lower specification limit USL - upper specification limit’ >

from group A

Only tests martted (D) are destructive (3.6.6)

Inspection or test

sub-group Cl Dimensions

Sub-group C20 Transition frequency

Where appropriate: Common-&titter reverse trans- fer capacitance

Where appropriate: Reverse transfer time factor

Sub-group C2b For ‘matched-pair transistors contained in the same case or encapsulation: Change in the difference between base-emitter voltages between T, - 25 “C and a specified high tempera- ture Ts

Where appropriate: Static value of commontmitter forward Current’.~ranster ratio:

0 large-signal devices

0 small-signal devices

Cm-off current(s) at high tem- perature. One or more of the following:

Collector-base cut-off current

Collector-emitter cut-off current

II

-

Symbol Ref.

4.2.2,

APP. R

T-007

T-042

T-043

T-033

T-006

T-001

T-OO!J

Conditions at T.,, - 25 “C unless otherwise specified

(see Clause 4 of the generic specification)

Vcs( V,,) - [specifted], IdId - [specified], /, = [specified]

Vc, - [specified (10 V pre- ferred)],

I’, - [specified], Ia - 0, / - [specified (1 MHz prr- ferred)]

V, - [specified], Is - [specified], f - [specified]

Vcs - [specified], I, - [specified], (preferably at typical operating voltage and current)

[dx. or pulse as specified (note l)] and: Vcs - [specified Iowl. Ic - [specified high]

V& - [specified], zc - ~speclfied low]

T _,b - [specified high]

and:

V, - breferably between 65% and 85% of Vc, max.] Is - 0

Vcs - [preferably between 65% and 85% of V,, max.1 V, - [X specified]

Inspection requirement limits

be Clause 1 of this standard]

x

X

13

IS QC 750102 : 1989 IEC QC 7!50102:1989

GROUP C (continued)

Conditions at c,,,, = 25 “C Inspection requirement

limits

Inspection or test Symbol Ref. unless otherwise specified

(see Clause 4 of the LF HF generic specification)

min. max. min. max.

Collectbr-emitter cut-off current kU2, T-009 V,, = [preferably between 65% x x and 85% of V,,, max.] HBE = [R specified]

Collector-emitter cut-off current ks,I) T-009 VCE = [preferably between 65% x x and 85% of VrEs max.] v,, = 0

Collector-emitter cut-off current kEM2, T-009 V,, = [preferably between 65% x x and 85% of V,,, max.] IB = 0

14 .

IS QC 750102 : 1989 * IEC QC 75OiO2 : 1989

GROUP C (continued)

Inspection or test Symbol Ref.

Conditions at T,, - 25 “C unless otherwise specified

(see Clause 4 of the generic specification)

Inspection require: ment limits

min. ma?.

Sub-group Q (note 5) Robustness of terminations: 0 Tensile

and/or l Torque (D)

149, .’ II, 1.1

* Value = ,[specified] 149,

II, 1.4 ,

No damage or as specified

sub-group c4 Resistance to soldering heat (D)

with fmal measurements: 0 cut-off current l forward current transfer ratio

149, [Periodicity = 6 months] III, 2 [As specified]

[note 31 USL

h2 Ie(I, LSL USL [note 41

Sub-group C6 . Acceleration, steady-state [for cavity devices only] with jinal measurements: a cut-off current l forward current transfer ratio

.

149, II, 5

[note 4 DSL h2 / w1, LSL USL

[note 41

Sub-group C7 Damp‘ heat, steady-state (D)

or: Damp heat, cyclic (D) [for non-cavity devices only]

with final m&nurements: 0 cut-off current l forward current transfer ratio

749, 85 “C, 85% R. H. III, 5 Vc, - (80% of rated voltage, up to

100 .V maximum]

149, Duration: 168 h. III, *4

It

[note 31 2USL. h IIE(I, 0.8LSL 1.2USL

[note 41

&b-group C8 Electrical endurance (1000 h) with j?nol measurements: 0 cut-off current 0 forward current transfer ratio

0 noise factor (dB) [low-noise types only]

141-2, Reserve bias V or:

[note 31 operating life 2USL

h, Is(r) (power at high 0.8ISL 1.2USL dissipation - 80% temperature [note 41

F to 100% 1.5USL of P, max.)’ [as specified]

Nores 3. i Specify one cutoff current from Subgroup A2b, preferably Zca~(,~ 4. r When given in A2b. 5. T- May not be required for special outlines, such a$ microminiature devices.

15

IS QC 750102 : 1989 IEC QC 750102 : 1989

GROUP C (continued)

Inspection 0~ test

Sub-group C9

Symbol Ref.

Conditions at &,, - 25 “C unless otherwise specified

(see Clause 4 of the generic specification)

Inspection require- ment limits

min. max.

Storage .at high temperature (D)

with final measurements: 0 cut-off current R forward current transfer ratio

749, Min. 1000 h, at Tw max. III, 2

[note 31 2USL h *IUI, O.SLSL I.ZUSL

[note 41

Sub-group CRRL Attributes mformation for C2, C3, C4, C6, C7 and C9. Measurement information before and after C8.

IV&S 3. - Specify one cut-off current from Sub-group A2b, preferably lceocl, 4. - When given in A2b.

9. Group D - Qualification approval tests

[When required, these tests shall be prescribed in the .detail specification for qualification approval only.]

10. Additional information (not for inspection purposes)

[To be given only as far as necessary for the specification and use of the device, for instance:

- temperature derating curves referred to in the limiting values;

- complete definition of a circuit for measurement, or of an additional method;

- detailed outline drawing.]

16