Isotopes and ion beams in the study of dielectric/semiconductor interfaces.

Institut des NanoSciences de ParisCNRS et Universités de Paris 6 et 7

Isotopes and ion beams in the study of dielectric/semiconductor interfaces.

Ian Vickridge

Système d’Analyse par Faisceau d’Ions Rapides

Institut des NanoSciences de ParisParis, France

H.J. von Bardeleben, J.-L. Cantin, C. Deville, J.-J. Ganem, M. D'Angelo, and I. Trimaille.


Growth => atomic transport

Isotopes - 6/7Li, H/D, 3/4He, 10/11B, 12/13C, 14/15N, 16/17/18O, 25/26Mg, 28/29/30Si

Growth => défauts electron paramagnetic resonance

First steps Deposition

Chemical reaction : thermodynamiques, kineticsDiffusion, atomic transportÉpitaxy, chemical order

Structure, composition of the surface

2D mobility, transport

Thermal growth

Sticking/chemical reactionInterface formationEpitaxy (or not …)

heat

Internal surfaces : interfaces of composition, structure

Defects, stress, relaxation

treatment under controlled atmosphere

Thin film growth processes


Thermal oxidation of Si and SiC

Diffusion barrier

n+n+

gate dielectric

Plug

CapacitorVery high material

Electrodes

29Si, Si13C

SiO2

16/17/18O2

+ + + + +

- - - - -

dVV

d

Gate electrode

MOSFET

+ + + + +

SiO2/Si• High technological interest• Système modèle• Système très très étudié

- - - - -


Manipulation of the interface Si(nano)/SiO2

(with B. Gallas, C. Kao, and I. Stenger, INSP)

SiO2/Si Interface

amorphous silica doped Er3+

15NH3, 15N18O 13C18O, 17/18O2 etc

First experiments underway

Study the effects of interface modification on nano-cristaux->Er3+ energy transferFormation of nanocristals of SiC, or Si with SiC (13C …) 'skin'Modification grain size by selective oxidation and oxynitridation

Isotopes, Accel, EPR (large internal surface), TEM, ellipsometry, photoluminescence etc…

pumptransfer ?

Emission 1.54 mtelecoms …


Tracing with 29Si,Manipulation of the SiC/SiO2 interface

SiC

29Si deposited or implanted

(CSNSM, Orsay)

oxidation

SiCSiO2

SiCSiO2

Ar, NO, CO, NH3, …

then, 18O2 as probe of chemical reactivity of interface

Initial experiments recently performed : results most promising


SiC nano-crystals

SiSiO2

CO1100°C

With G. Battisitig, A Pongracz, Z. HajnalMFA-KFKI, Budapest

SiC nano-crystals epitaxially embedded in Si

SEM image after chemical removal of SiO2 overlayer

29Si substrate, Si16O2,Si18O2, 12C16O, 13C18O …


SiC nanocrystals SiC nanocrystals SiOSiO22/Si thermal/Si thermal

• (100)

• (111)

• (110)

Growth mechanisms?Atomic transport mechanisms?Kinetics, activation energies?


13C Analysis (work in progress!)

13C(p,p)13C Strong resonance (50-100 R) at backward angles near 1.5 MeVMilne PhysRev 1954 in Jarjis, numerous pre-1956 data in Jarmie and Seagrove

13C(p,)13C Strong narrow (~ 100eV) resonance at 1.746 MeVNucl Data Tables Ajzenberg-Selove, applies in Vickridge thesis

13C(,)13CStrong resonance around 2.7 MeV at backward angleBarnes PhysRev 1965 and Kerr PhysRev 1968 in IBANDL


13C Analysis

13C(d,p)13C Qm=5952 keV

400 600 800 1000 1200 1400 16000

2

4

6

0

2

4

6

0

2

4

6

400 600 800 1000 1200 1400 1600

Incident Energy (keV)

Dif

fere

ntia

l Cro

ss S

ecti

on (

mb/

sr)

13C(d,p0)14C

This work Marion 1956

(a)

(b)

(c)

= 135°

= 150°

= 165°

Useful yield in sub 2 MeV range.Marion PhysRev 1956 and Colaux et al NIMB and IBANDL


13C Analysis13C(d,)11B Q0= 5167.89 keV

Q1= 3043.2Q2= 722.9

400 600 800 1000 1200 1400 16000

3

6

9

12

150

3

6

9

12

150

3

6

9

12

15

400 600 800 1000 1200 1400 1600

(c)

= 165°

13C(d,0)11B

Incident Energy (keV)

(b) = 150°

Dif

fere

ntia

l Cro

ss S

ecti

on (

mb/

sr)

(a)

This work Marion 1956

= 135°

Useful yield in sub 2 MeV range.Marion PhysRev 1956 and Colaux et al NIMB and IBANDL


13C Analysis - Summary

13C(p,)13C No further work required from ND perspective ?

13C(p,p)13C Useful looking resonance at 1.5 MeV.New measurements needed? ()? Evaluation?

13C(,)13C Useful looking resonance near 2.7 MeV.New measurements needed? ()? Evaluation?

13C(d,p)14C Useful below 2 MeV. Further measurements needed for succesful valuation?

13C(d,)11B Useful below 2 MeV. Some discrepancies. Further measurements needed for succesful valuation?


15N Analysis (work in progress too!)

15N(p,)12C Wonderful narrow (=100eV) resonance at 429 keVwidely used by several groups

15N(p,p)15N useful? resonance near rising to near 3.5 R near 900 keVHagendorn PhysRev 1957 in Jarjis

15N(,)15N Useful? resonance near1900 keVSmotrich PhysRev 1961 from IBANDL


15N Analysis

15N(d,p)16N Q0= 264.53 keV Unusable

900 1000 1100 1200 1300 1400 15000

5

10

15

20

25

30

35

40

45

50

(m

b.sr

-1)

Energy (leV

15N(p,0)12C. Sawicki NIMB from IBANDL15N(p,0)12C Q0= 4965 keV Useful cross section. Widely used.Sawicki NIMB in IBANDL


15N Analysis

15N(d,0)13C Q0= 7687 keV Useful below 2 MeVSawicki, Vickridge NIMB in IBANDL


15N Analysis - Summary

15N(p,)12C No further work required from ND perspective?

15N(p,p)15N

15N(,)15N

15N(d,0)13C

Useful looking resonance near 900 keV.New measurements needed? ()? Evaluation?

Possibly useful resonance near 1900 keV.New measurements needed? ()? Evaluation?

Useful below 2 MeV for profiling thicker samples. Some discrepancies, further measurements needed for succesful valuation?


Facilities available at INSP

Special UHV and high vacuum furnaces for using (expensive) isotopically labelled gases

2.5 MV Van de GraaffHigh energy p, d, 3He, detection cp, , xchannelling

Clean room

Isotopes and ion beams in the study of dielectric/semiconductor interfaces.

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