Dfw sept2014 ims open db and ims catalog -- IMS UG September 2014 Dallas
ISIMS 2012: First High-Resolution Thermal-Ions Imaging in a DT-IMS
Transcript of ISIMS 2012: First High-Resolution Thermal-Ions Imaging in a DT-IMS
First detection of thermal ions and ion swarm imaging in a DT-IMS by means of a high spatial-resolution IonCCD™
Omar Hadjar1, Stephen Davila2, Gary Eiceman2 1OI Analytical, CMS field product, Mass Spectrometry and Ion Imaging, Pelham, AL
2 NMSU, Department of Chemistry and Biochemistry, Las Cruces, NM
Motivations
• To explore the capabilities of the IonCCD as a detector for IMS • To extend detectability from keV down to thermal ions • To provide real time, high density imaging of the ion swarm at
ambient pressures. • To determine the diffusion of ion swarms in the drift region • To characterize optics for ions • To obtain sufficient experimental data on ion motion under electric
fields and form theoretical modeling and calculations
Setup Schematics of the DT-IMS
1
2
4
6
8
3
5
7
9
IonCCD chip
Slit-plate
Potential
Distance
IonCCD housing Ch
ip
Ion
CC
D H
ou
sin
g
Co
ld f
oo
t
De
tect
or
bo
ard
Slit
-Pla
te 1 2 3 4 5 6 7 8 9
Femto-Amp
Ring 1
Ring 2
Ring 3
Ring 4
Ring 5
Ring 6
Ring 7
Ring 8
Ring 9
Ring stack of the DT-IMS
IonCCD in SS enclosure
Camera box
IonCCD base lined signal
Picture shot while Stephen was changing the DT-IMS rings arrangement with the IonCCD ON and recording no ion signal but an unperturbed base line
Experimental Setup
6 rings DT-IMS (pre-ring lens & slit disc)
-10 -5 0 5 10 15 200
100
200
300
400
500
0 20 40 60 80
0
50
100
150
200
250
300
350
400
450
-10 -5 0 5 10 15 200
200
400
600
800
1000
IonCCD X axis (mm)
2 kV DT-IMS
Ion
CC
D s
ign
al (d
N)
IonCCD
encosure
bias:
70V
50V
30V
25V
20V
14V
10V
6V
4V
1.6V
0.8V
0.2V
0V
3 kV
2 kV
Ion
CC
D in
tegr
ated
sig
nal
(kd
N)
IonCCD enclosure Bias (V)
Ion
CC
D s
ign
al (d
N)
IonCCD
encosure
bias:
70V
50V
30V
25V
20V
14V
10V
6V
4V
1.6V
0.8V
0.2V
0.1V
0V
3 kV DT-IMS
IonCCD housing voltage bias effect
Detection Efficiency
-25 -20 -15 -10 -5 0 5 10 15 20 25
0
100
200
300
400
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600
700
800
0 500 1000 1500 2000 2500 3000
0
100
200
300
400Io
nC
CD
sig
nal (d
N)
IonCCD coordinates (mm)
IMS voltage (V)
3000
2500
2000
1500
1000
500
Ion
CC
D in
teg
rate
d s
ign
al (k
dN
)
IMS voltage (V)
0
20
40
60
80
Fe
mto
Am
plif
ier
(pA
)
IonCCD vs. FemtoAmp response to the IMS ion throughput
0 5 10 15 20 25 30 35 40 45 50 55 60 65 700
50
100
150
200
250
300
350
Ion
CC
D (
kd
N)
FemtoAmplifier (pA)
Equation y = a + b*
Adj. R-Squar 0.99793
Value Standard Erro
E Intercept -22913.3526 5498.23184
E Slope 5263.6508 119.6966
The integrated profiles are plotted here against the Femto-Amplifier response when
operated at 1011 gain. This comparative study was conducted at same experimental
condition with a 16x1mm2 slit plate and grounded IonCCD plate to expose both
detection surfaces to the same ion beam cross section hence the same total ion current.
1000 1500 2000 2500 3000
1
10
100
1000
10000Io
nC
CD
re
sp
on
ce
(io
n/d
N)
IMS voltage (V)
noise floor (12 dN)
IonCCD detection efficiency at different IMS high voltage bias
0.01 0.1 1 10 100 1000 100001
10
100
1000
10000
Ion
CC
D r
esp
on
se (
ion
/dN
)
Ion energy (eV)
Broad band detection>105
Ion energy range of maintained IonCCD detection efficiency
We observed a slight decrease of the IonCCD detection efficiency at lower IMS HV. This can be due to experiment-to-experiment variation, or witnessing the effect of the floating pixels, during charge integration time, on the ion collection (retarding field effect).
Using the averaged value obtained we show clearly that not only the IonCCD not detects
thermal ions but equally important maintain its detection efficiency from ~keV down to ~meV ion energies. By analogy to optical CCDs, the IonCCD
has a broad band detection > 105
-10 -8 -6 -4 -2 0 2 4 6 8 10 12 14 16 18
0
200
400
600
800
1000
Ion
CC
D s
ign
al (d
N)
Offse
t Y
va
lue
s
IonCCD coordinates (mm)
740V
720V
700V
680V
660V
650V
640V
630V
664V
16 mm B&N Gate
2nd
ring
transversal
B&N gate Imaging
-10 -8 -6 -4 -2 0 2 4 6 8 10 12 14 16 18
0
200
400
600
800
Ion
CC
D s
ign
al (d
N)
Offse
t Y
va
lue
s
IonCCD coordinates (mm)
2070V
2050V
2030V
2010V
2000V
1990V
1980V
1970V
1989V
16 mm B&N Gate
6th ring
transversal
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0
100
200
300
400
500
600
700
800
-8 -6 -4 -2 0 2 4 6 8
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
0 1 2 3 4 5 6 7 8 9
1.0
1.5
2.0
2.5
3.0
3.5
4.0
IonC
CD
sig
nal (d
N)
Off
set
Y v
alu
es
IonCCD coordinates (mm)
B&N Gate
8th ring +5V
6th ring -9V
2nd ring -24V
Str
uctu
re F
WH
M (
mm
)
Structure centroid location (mm)
Gate location 8th ring
6th ring
2nd ring
truncated
avera
ge p
eak w
idth
(m
m)
Gate position(ring #)
ring-to-ring=10 mm
Equationy = Intercept + B1*x^1
Weight Instrumental
Residual
Sum of
Squares
0.02831
Adj. R-Squar 0.99857
Value Standard
Error
CIntercept 0.9567 0.02184
B1 0.1940 0.00518
The slope suggests that diffusion in those conditions (3000V/8 rings=80mm, and Please check the total distance)
result in ~0.2 mm radial expansion for every 10mm axial motion (~2%)
0.194 mm
3000V/80mm
300 ml/min
10 mm
-100 -50 0 50 100
100
1000
10000
100000
Ion
CC
D in
teg
rate
d s
ing
na
l (d
N)
wire-set V (V)
B&N 2nd transversal
B&N 6th transversal
B&N gate
Opening and closing settings of the B&N gate
-10 -8 -6 -4 -2 0 2 4 6 8 10 12 14 16 18
0
200
400
600
Ion
CC
D s
ign
al (d
N)
Offse
t Y
va
lue
s
IonCCD coordinates (mm)
740V front
720V front
700V front
660V front
664V back
Tyndall Gate
2nd
ring
collinear
16 mm
Tyndall gate Imaging
-10 -8 -6 -4 -2 0 2 4 6 8 10 12 14 16 18
0
200
400
600
800
1000
Tyndall Gate
2nd
ring
transversal
720V back
700V back
690V back
680V back
660V back
640V back
620V back
Ion
CC
D s
ign
al (d
N)
Offse
t Y
va
lue
s
IonCCD coordinates (mm)
664V front
16 mm
-10 -8 -6 -4 -2 0 2 4 6 8 10 12 14 16 18
0
200
400
600
800
1000
1200
1400
Tyndall Gate
2nd
ring
transversal
Ion
CC
D s
ign
al (d
N)
Offse
t Y
va
lue
s
IonCCD coordinates (mm)
740V front
720V front
700V front
680V front
670V front
660V front
664V back
16 mm
Front set scan Back set scan
-10 -8 -6 -4 -2 0 2 4 6 8 10 12 14 16 18
0
100
200
300
400
500
Ion
CC
D s
ign
al (d
N)
Offse
t Y
va
lue
s
IonCCD coordinates (mm)
2070V front
2060V front
2040V front
2020V front
2010V front
2000V front
1989V front
1989V back
16 mm Tyndall Gate
6th ring
collinear
-10 -8 -6 -4 -2 0 2 4 6 8 10 12 14 16 18
0
200
400
600
800
1000 Tyndall Gate
6th ring
transversal
Ion
CC
D s
ign
al (d
N)
Offse
t Y
va
lue
s
IonCCD coordinates (mm)
2120V front
2100V front
2080V front
2060V front
2040V front
2020V front
2000V front
1980V front
1989V back
16 mm
-10 -8 -6 -4 -2 0 2 4 6 8 10 12 14 16 18
0
200
400
600
800
Ion
CC
D s
ign
al (d
N)
Offse
t Y
va
lue
s
IonCCD coordinates (mm)
2060V back
2040V back
2020V back
2000V back
1980 back
1960V back
1989V front
16 mm Tyndall Gate
6th ring
transversal
Front set scan Back set scan
• 1117 V, 2 ring • Ion source in-and-out • 10 pixels avg., 10 frames avg. • 95 MB file
IonCCD signal (dN)
Dynamic Images with IMS Parameters
• Zoom window, 35 sec, 19 mm • No pixel and frame avg. • 24 µm x 100 ms Resolution
Dynamic Images with IMS Parameters
IonCCD signal (dN)
0 2 4 6 8 10
0
1000
2000
3000
4000R
ing p
ote
ntia
l (V
)
ring # source-to-IonCCD
Increasing
Decreasing
-10 -5 0 5 10
0
200
400
600
800
1000
345 kdN
Increasing E-field
Decreasing E-field
IonCCD X axis (mm)
IonC
CD
sig
nal (d
N)
170 kdN
Increasing vs. decreasing E-field effects
Conclusions
• IonCCD showed linear response and detection of ions in the thermal energy regime, extending the detection band with from thermal to medium energy regime (10 meV – 10 keV)
• The first high resolution imaging of ion diffusion determined experimentally with better than 0.1 mm resolution in one direction.
• Shadowing of the ions observed from shutter wires throughout the drift region of the IMS.
• Gathered experimental data for improved ion modeling.
Acknowledgements
OI Analytical, for funding the collaborative work