IS 14901-5 (2004): Semiconductor Devices - Discrete Devices and … · 2018. 11. 15. ·...

Disclosure to Promote the Right To Information

Whereas the Parliament of India has set out to provide a practical regime of right to information for citizens to secure access to information under the control of public authorities, in order to promote transparency and accountability in the working of every public authority, and whereas the attached publication of the Bureau of Indian Standards is of particular interest to the public, particularly disadvantaged communities and those engaged in the pursuit of education and knowledge, the attached public safety standard is made available to promote the timely dissemination of this information in an accurate manner to the public.

इंटरनेट मानक

“!ान $ एक न' भारत का +नम-ण”Satyanarayan Gangaram Pitroda

“Invent a New India Using Knowledge”

“प0रा1 को छोड न' 5 तरफ”Jawaharlal Nehru

“Step Out From the Old to the New”

“जान1 का अ+धकार, जी1 का अ+धकार”Mazdoor Kisan Shakti Sangathan

“The Right to Information, The Right to Live”

“!ान एक ऐसा खजाना > जो कभी च0राया नहB जा सकता है”Bhartṛhari—Nītiśatakam

“Knowledge is such a treasure which cannot be stolen”

“Invent a New India Using Knowledge”

है”ह”ह

IS 14901-5 (2004): Semiconductor Devices - Discrete Devicesand Integrated Circuits, Part 5: Optoelectronic Devices[LITD 5: Semiconductor and Other Electronic Components andDevices]

IS 14901 (Part 5): 2004IEC 60747-5(1 992)[Superseding IS 3700 (Part 11): 1994]

Indian Standard

SEMICONDUCTOR DEVICES — DISCRETE DEVICESAND INTEGRATED CIRCUITS

/ PART 5 OPTOELECTRONIC DEVICES

ICS 31.260

November 2004

0 BIS 2004

BUREAU OF INDIAN STANDARDSMANAK BHAVAN, 9 BAHADUR SHAH ZAFAR MARG

NEW DELHI 110002Price Rs.1175. Q(J

Semiconductor Devices and Integrated Circuits Sectional Committee, LTD 10

NATIONAL FOREWORD

This Indian Standard (Part 5) which is identical with IEC 60747-5 (1 992) ‘Semiconductor devices —Discrete devices and integrated circuits — Part 5: Optoelectronic devices’ [along with AmendmentNo. 1 (1994) and Amendment No. 2 (1995)] issued by the International Electrotechnical Commission(1EC) was adopted by the Bureau of Indian Standards on the recommendations of SemiconductorDevices and Integrated Circuits Sectional Committee and approval of the Electronics andTelecommunication Division Council.

This standard covers the terminology, letter symbols, essential ratings and characteristics, methods ofmeasurements, and acceptance and reliability criteria for optoelectronic devices.

The object of this series of standards is to specify adequately the properties of the device for theintended application and to facilitate comparison and choice between similar products.

Hitherto, 1S 3700, IS 3715 and IS 4400 series, based on IEC 147 series of standards, coveredessential ratings and characteristics, letter symbols and methods of measurements of semiconductordevices respectively. However, IEC 147 series has been superseded by IEC 747 series. The presentseries of standards has been brought out to consolidate the provisions of IS 3700, IS 3715 andIS 4400 series and align it with the latest version of IEC 747 series.

This Indian Standard (Part 5) shall supersede IS 3700 (Part 11) : 1984 ‘Essential rating andcharacteristics of semiconductor devices: Part 11 Light emitting diodes’.

Amendments No, 1 and 2 have been printed at the end of this publication.

The text of the IEC Standard has been approved as suitable for publication as an Indian Standardwithout deviations. Certain conventions are, however, not identical to those used in Indian Standards.Attention is particularly drawn to the following:

a) Wherever the words ‘International Standard’ appear referring to this standard, they should beread as ‘Indian Standard’.

b) Comma (,) has been used as a decimal marker while in Indian Standards, the current practiceis to use a point (.) as the decimal marker.

Only the English language text in the International Standard has been retained while adopting it in thisstandard.

CROSS REFERENCE

In the adopted standard, reference appears to the following International Standard for which IndianStandard also exists. The corresponding Indian Standard which is to be substituted in its place isgiven below along with its degree of equivalence:

/nternationa/ Standard Corresponding Indian Standard Degree ofEquivalence

IEC 60747-1 (1983) Semiconductor IS 14901 (Part 1) : 2001 Semiconductor Identicaldevices — Discrete devices and devices — Discrete devices andintegrated circuits — Part 1 : General integrated circuits: Part 1 General

v

(Continued on third cover)

1, ,, II 1. .-—-——

IS 14901 (Part 5):2004IEC 60747-5 (1 992)

CONTENTS

1

2

1

2

3

CHAPTER 1:GENERAL

lntroducto~ note................................................................................................................................ 1

Scope .................................................................................................................................................. 1

CHAPTER 11:TERMINOLOGY AND LEITER SYMBOLS

Physicalconcepts.............................................................................................................................. 2

1.1 (Electromagnetic)radiation(IEV 845-01-01) ................................................................... 2

1.2 Optical radiation(IEV 845-01-02) ...................................................................................... 2

1.3 Visibleradiation(IEV 845-01-03) ...................................................................................... 2

1.4 Infrared radiation(IEV 845-01-04, specialized).............................................................. 2

1.5 Ultravioletradiation(IEV 845-01-05, specialized).......................................................... 2

1.6 Light(IEV 845-01-06, withoutnote2 whichis not relevant) ......................................... 2

1.7 Photoeledtic effed(from lEV845-05-33: photoeledricdetedor) ............................... 2

Types of devices................................................................................................................................ 3

2.1

2.2

2.3

2.4

2.5

2.6

2.72.8

2.9

2.10

2.112.12

2.13

2.14

2.15

Semiconductoroptoelectronicdevice............................................................................... 3

Semiconductorphotoemitter.............................................................................................. 3

Semiconductoroptoelectronicdisplay.............................................................................. 3

Semiconductorlaser............................................................................................................ 3

Light-emittingdiode (LED) .................................................................................................. 3

Infrared-emittingdiode (IRED) ........................................................................................... 3

(Semiconductor)photosensitivedevice ........................................................................... 3

(Semiconductor)photoelectricdetector ........................................................................... 3

(Semiconductor)photoresistor,photoconductivecell (IEV 845-05-37, specialized). 4

Photoelement,photovoltaiccell (IEV 845-05-38) ........................................................... 4

Photodiode(IEV 845-05-39) .............................................................................................. 4

Avalanchephotodiode(IEV 845-05-40, specialized)..................................................... 4

Phototransistor..................................................................................................................... 4

Photothyristor........................................................................................................................ 4

Photocoupler,optocoupler................................................................................................. 4

General terms .................................................................................................................................... 4

3.1 Opticalaxis............................................................................................................................ 4

3.2 Opticalport (of a semiconductoroptoelectronicdevice) ............................................... 4

3.3 (Optical)cladding(IEV 731-02-05) ................................................................................... 8

IS 14901 (Part 5) :2004IEC 60747-5 (1 992)

Clause Page

4

5

1

2

3

4

5

6

7

1

2

3

4

5

6

1

Terms relatedto ratingsand characteristics................................................................................. 8

4.1

4.24.3

4.4

General .................................................................................................................................. 8

Photoemitters........................................................................................................................ 10

Photosensitivedevices ....................................................................................................... 18

Photocouplers,optocouplers............................................................................................. 21

Lettersymbols....................................................................................................................................22

CHAPTER Ill: ESSENTIAL RATINGS AND CHARACTERISTICS

SECTION ONE - LIGHT-EMllTING DIODES(Excludingdevicesfor fibreopticsystemsor subsystems,

dealt with in sectionseven)

Type .....................................................................................................................................................23

Semiconductormaterial.................................................................................................................... 23

Colour.................................................................................................................................................. 23

Detailsof outlineand encapsulation............................................................................................... 23

Limitingvalues (absolutemaximumsystem)overthe operatingtemperaturerange,

unlessotherwisestated ........................................................................................................ 23

Eieotricalcharacteristics................................................................................................................... 23

Supplementaryinformation.............................................................................................................. 24

SECTION TWO - INFRARED-EMITTING DIODES(Excludingdevicesfor fibreopticsystemsor subsystems,

dealt with in sectionseven)

Type .....................................................................................................................................................25



Limitingvalues (absolutemaximumsystem)overthe operatingtemperaturerange,

unlessotherwisestated ........................................................................................................ 25

Electricalcharacteristics................................................................................................................... 25


SECTION THREE - PHOTODIODES(Excludingdevicesfor fibreopticsystemsor subsystems)

Type ..................................................................................................................................................... 27

ii

IS 14901 (Part 51:2004IEC 60747-5 (1 992)

Clause Paga

2

3

4

5

6

1

2

3

4

5

6

7

1

2

3

4

5

6

7

1

2

3



Limitingvalues (absolutemaximumsystem)overthe operatingtemperaturerange,unlessotherwisestated ........................................................................................................ 27

Electricalcharacteristics................................................................................................................... 28


SECTION FOUR - PHOTOTRANSISTORS(Excludingdevicesfor fibre opticsystemsor subsystems)

Type .....................................................................................................................................................28


Polarity................................................................................................................................................29


Limitingvalues (absolutemaximumsystem)overthe operatingtemperaturerange,unlessotherwisestated ........................................................................................................ 29

Electricalcharacteristics....................................................................................................... 30


SECTION FIVE - PHOTOCOUPLERS, OPTOCOUPLERS(WITH OUTPUT TRANSISTOR)

Type .....................................................................................................................................................31


Polarityof the outputresistor........................................................................................................... 31


Limitingvalues (absolutemaximumsystem)overthe operatingtemperaturerange,unlessotherwisestated ........................................................................................................3l

Electricalcharacteristics...................................................................................................... 33


SECTION SIX - LASER DIODES

Type .....................................................................................................................................................34

Semiconductor...................................................................................................................................34

Detailsof outlineand encapsulation...............................................................................................34

,,

-{

.Ill

---.-w. -

IS 14901 (Part 5) :2004IEC 60747-5 {1 992)

Ciauaa Paga

4

5

6

1

2

3

4

5

6

1

2

3

4

5

6

7

1

2

3

4

Limitingvalues (absolutemaximumsystem)over the operatingtemperature range,unlessotherwisestated) ....................................................................................................... 34

Electricaland opticalcharacteristics.............................................................................................. 35

Supplementaryinformation................................................................................................... 37

SECTION SEVEN - LIGHT-EMITTING DIODES AND lNFRARED-EMllTING DIODESFOR FIBRE OPTIC SYSTEMS OR SUBSYSTEMS

Type .....................................................................................................................................................37



Limitingvalues (absolutemaximumsystem)over the operatingtemperature range,unlessotherwisestated ........................................................................................................ 37

Electricaland opticalcharacteristics..................................................................................... 39

Supplementaryinformation............................................................................................................ 41

SECTION EIGHT - LASER MODULE WITH PIGTAILS

Type ................................................................................................................................................... 41

Semiconductor.................................................................................................................... 141

Detailsof outlineand encapsulation............................................................................................. )42

Limitingvalues (absolutemaximumsystem)over the operatingtemperature range,unlessotherwisestated ...................................................................................................... 42

Electricaland opticalcharacteristics................................................................................... 44


Hazard ........................................................................................................4..................................... 47

SECTION NINE - PIN PHOTODIODES FOR FIBRE OPTICSYSTEMS OR SUBSYSTEMS

Type ................................................................................................................................................... 47

Semiconductor material .................................................................................................................. 47

Details of outline and encapsulation ............................................................................................. 147

Limiting values (absolute maximum system) over the operating temperature range,unless otherwisestated ...................................................................................................... 47

5

I6

1

2

3

4

5

6

1

IS 14901 (Part 5):2004IEC 60747-5(1992)

clause Page

Electricaland opticalcharacteristics............................................................................................ 48


SECTION TEN - AVALANCHE PHOTODIODES (APDs)WITH OR WITHOUT PIGTAILS

Type ................................................................................................................................................... 50

Semiconductor.................................................................................................................................. 50

Detailsof outlineand encapsulation............................................................................................. 50

Limitingvalues (absolutemaximumsystem)over the operatingtemperaturerange,unlessothetwisestated ...................................................................................................... 50

Electricaland opticalcharacteristics............................................................................................ 51


CHAPTER IV: MEASURING METHODS

Measuringmethodsfor photoemitters............................................................................... 53

1.1

1.2

1.3

1.4

1.5

1.6

1.7

1.8

1.9

1.10

1.11

Luminousintensityof fiiht-emittingdiodes( (Q ......................................................

Radiant intensityof infrared-emittingdties (IJ ....................................................

Radiant poweror fotwardcurrentof light-emittingdties (LED), infrared-em.tihg diodes (IRED) and laserdiodeswithor withoutpigtails.............................

Peak-emissionwavelength(iP), spectralradiationbandwiih (AA)and nu~rof longitudinalmodes(nm) ......................................................................................

Switchingtimes of infrared-emtilngdiode and fiiht-emittingdiodewith or withoutpigtails.............................................................................................

Small-signalcut-offfrequency(fC)of light-emittingdmdes(LED),infrared-emiMngdmdes(IRED) and laserdiodeswithor withoutpigtails...............

Thresholdcurrentof laserdiodeswithor withoutpigtails........................................

Relative intensitynoiseof Iight-emitthgdiodes(LED), infrared-emittingdiodes (IRED) and laserdiodeswithor withoutp.@tails..........................................

Emissionsourcelengthand widthand astigmatismof a laserdiodewithoutpi@ail...........................................................................................................

Switchingtimesof a laserdiodewithor withoutpigtails..........................................

Half-intensityangle and misalignmentangleof a photoemitter...............................

53

54

55

57

59

61

63

64

65

67

70

v

IS 14901 (Part 5) :2004IEC 60747-5 (1 992)

Clause

1.12

1.13

1.14

1.15

Paga

Carrier to noise ratio of light-emitting diodes, infrared emitting diodes,laser diodes and a laser module with or without pigtails ......................................... 72

S1, parameter of infrared-emitting diodes, light-emitting diodes,laser diodes,lasermoduleswithorwithoutpigtails................................................ 74

Trackingerrorfora lasermodulewithpigtails,withorwithoutcooler.................... 76

SpectralIinewidthofa laserdiodewithorwithoutpigtails...................................... 78

2 Measuringmethodsforphotosensitivedevices................................................................. 79

2.1

2.2

2.3

2.4

2.5

2.6

2.7

2.8

Reversecurrentunderopticalradiationof photodiodeincludingdeviceswithorwithoutpigtails(/~,H)or /~(0)andcollectorcurrentunderopticalradiationof phototransistor(/C(H)or /C(~)) ............................................................... 79

Darkcurrentforphotodiodes/RanddarkcurrentsforphototransistorsI \ I ........................................................................................................ 82CEO* ECOI EBO

Collector-emittersaturationvottageVc~(=t) of phototransistor............................ 83

Noiseofa PINphotodiode...................................................................................... 84

Excessnoisefactorof an avalanchephotodiie withorwithoutpigtails................ 87

Small-signalcut-offfrequencyof a photodiodewithorwithoutpigtails................... 89

Multiplicationfactorof anavalanchephotodiode(APD)withorwithoutpigtails..................................................................................................................... 90

Switching times of a PIN photodiode or an avalanche photodiode (APD)withorwithoutpigtails............................................................................................. 91

3 Measuringmethodsforphotocouplem............................................................................... 94

3.1

3.2

3.3

3.4

3.5

3.6

3.7

Currenttransferratio(hF(ctt~ ... .. .. . .. .. .. ... .. ... .... . .. ... .. .... ... .. . .. .. .. . .. .. . .. .... . .. .. . .. .. .. . .. .. . .. . 94

Input-to-outputcapacitance(Cio) ........................................................... . ...... 95

isolationresistancebetweeninputandoutput(qo) ................................................ 96

Isolationtest............................................................................................................ 97

Partialdischargesofphotocouplers........................................................................ 98

Collector-emittersaturationvoltageVc~(~at)ofa photocoupler............................... 103

‘whcwi~ timestm, tofiof a photocoupler.............................................................. 106

Amendment 1...................................................................................................... 108

Amendment 2 ...................................................................................................... 159

vi

IS 14901 (Part 5):2004IEC 60747-5(1992)

Indian Standard

SEMICONDUCTOR DEVICES — DISCRETE DEVICESAND INTEGRATED CIRCUITS

PART 5 OPTOELECTRONIC DEVICES

CHAPTER 1:GENERAL

1 Introductory note

As a rule, it will be necessary to use Publication 747-1 together with the present standard.In 747-1, the user will find all basic information on:

- terminology;

- letter symbols;

. essential ratings and characteristics;

measuring methods;

. acceptance and reliability.

2 Scope

This standard applies to the following categories or sub-categories of devices:

. Semiconductor photoemitters, including:

- light-emitting diodes (LEDs);

- infrared-emitting diodes (IREDs);

- laser diodes and laser-diode modules;

- optoelectronic displays (under consideration).

. Semiconductor photoelectric detectors, including:

- photodiodes;

- phototransistors.

● Semiconductor photosensitive devices, including:

- photoresistors, photoconductive cells;

- photothyristors (under consideration).

. Semiconductor devices utilizing optical radiation for internal operation, including:

- photocouplers, optocouplers.

Ij

“,’

The sequence of the different chapters is in accordance with Publication 747-1, chapter Ill,subclause 2.1.

1

.—----

‘7 ,IS 14901 (Part 5) :2004IEC 60747-5 (1 992)

CHAPTER 11:TERMINOLOGY AND LETTER SYMBOLS

NOTE - A number of additional terms of interest foroptoelectronic davices, e.g. for radiometric, photo-metric and spactrophotometric quantities, appear in chapter 845 of the IEV, which supersedes chapter 45.

1 Physical concepts

1.1 (Electromagnetic) radiation (IEV 845-01-01)

1) Emission or transfer of energy in the form of electromagnetic waves with the asso-ciated photons.

2) These electromagnetic waves or these photons.

1.2 Optical radiation (IEV 845-01-02)

Electromagnetic radiation of wavelengths lying between the region of transition to X-rays(= 1 nm) and the region of transition to radio waves (= 1 rim).

1.3 Visib/e radiation (IEV 845-01 -03)

Any optical radiation capable of causing a visual sensation directly.

NOTE - There are no precise limits for the spectraf range of visibfa radiation since they depend upon theamount of radiant power available and the responsivity of the observer. The lower limit is generally takenbetween 360 nm and 400 nm and the uppar limit between 760 nm and 830 nm.

1.4 /ntrared radiation (IEV 845-01-04, specialized)

Optical radiation for which the wavelengths are longer than those for visible radiation.

1.5 U/travio/et radiation (IEV 845-01-05, specialized)

Optical radiation for which the wavelengths are shorter than those for visible radiation.

1.6 Light (IEV 845-01-06, without note 2 which is not relevant)

1.6.1 Perceived light (see IEV 845-02-17)

1.6.2 Visible radiation (see IEV 845-01-03)

NOTE - Concept 2 is sometimes used for optical radiation extending outside the visible range, but tfisusage is not recommended.

1.7 Photoelectric effect (from IEV 845-05-33: photoelectric deteotor)

Interaction between optical radiation and matter resulting in the absorption of photons andthe consequent generation of mobile charge carriers, thereby generating an electric poten-tial or current, or a change in electrical resistance, excluding electrical phenomena causedby temperature changes.

2

IS 14901 (Part 5) :2004IEC 60747-5 (1 992)

2 Types of devices

2.1 Semiconductor optoelectronic device

1) A semiconductor device that emits or deteots or that is responsive to coherent ornon-coherent optical radiation.

2) A semiconductor device that utilizes such radiation for its internal purposes.

2.2 Semiconductor photoemitter

A semiconductor optoelectronic device that directly converts electric energy into opticalradiant energy.

2.3 Semiconductor optoelectronic display

A semiconductor photoemitter designed for the presentation of visual information.

2.4 Semiconductor laser

2.4.1 (Semiconductor) laser diode

A semiconductor diode that emits coherent optical radiation through stimulated emissionresulting from the recombination of free electrons and holes when excited by an electriccurrent that exceeds the threshold current of the diode.

NOTE - The laserdiodeis mountedon a submountor in a packagewithor withoutcouplingmeans(e.g. lens, pigtail).

2.4.2 Laser-diode module

A module containing, together with the laser diode, means for an automatic optical and/orthermal stabilization of the radiant output power.

2.5 Light-emitting diode (LED)

A semiconductor diode, other than a semiconductor laser, capable of emitting visibleradiation when excited by an electric current.

2.6 /nfrared-emitting diode (IRED)

, A semiconductor diode other than a semiconductor laser capable of emitting infraredradiation when excited by an electric current.

2.7 (Semiconductor) photosensitive device

A semiconductor device that utilizes the photoelectric effect for detection of opticalradiation.

2.8 (Semiconductor) photoelectric detector

-~

A semiconductor device that utilizes the photoelectric effect for detection of opticalradiation.

.. _.A,.

IS 14901 (Part 5) :2004IEC 60747-5 (1 992)

2.9 (Semiconductor) photoresistor, photoconductive cc// (IEV 845-05-37, specialized)

A semiconductor photoelectric detector that utilizes the change of electric conductivity pro-duced by the absorption of optical radiation.

2.10 Photoe/ement, phofovo/taic cc// (1EV 845-05-38)

A photoelectric detector that utilizes the electromotive force produced by the absorption ofoptical radiation.

2.11 Photodiocfe (IEV 845-05-39)

A photoelectric detector in which a photocurrent is generated by absorption of opticalradiation in the neighborhood of a PN junction between the semiconductors, or of ajunction between a semiconductor and a metal.

2.12 Ava/anche photodiode (IEV 845-05-40, specialized)

A photodiode operating with a reverse bias such that the primary photocurrent undergoesamplification within the diode.

2.13 Phototransistor

A transistor in which the current produced by the photoelectric effect in the neighborhoodof the emitter-base junction acts as base current, which is amplified.

2.14 Photothyristor

A thyristor that is designed to be triggered by optical radiation.

2.15 Photocoupler, optocoupler

A semiconductor optoelectronic device designed for the transfer of electrical signals byutilizing optical radiation to provide coupling with electrical isolation between the input andthe output.

3 General terms

3.1 Optical axis

A line about which the principal radiation or sensitivity

NOTE - Unless otherwise stated, the optical axis coincides

sensitivity.

“

pattern is centered.

with the dkection of maximum radiation or

3.2 Optical pod (of a semiconductor optoelectronic device)

A geometrical configuration, referenced to an external plane or surface of the device, thatis used to specify the optical radiation emitted from an emitting device or accepted by adetecting device.

NOTE - The geometrical configuration shall be specified by the manufacturer by means of geometrical infor-mation, e.g.:

4

IS 14901 (Part 5) :2004IEC 60747-5 (1 992)

location, shape andsize of thearea ofemission or acceptance,

angle of emission or acceptance,other parameters, e.g. numerical aperture ofopticalfibre,orientation of optical axis.

Examples:

Signification of annotations in the figures:

a = emission of acceptance angle

--f!-D = optical port with diameter DRef. = reference locus for the definition of the optical port.

Example I: Devices with pigtail (emitter or detector)

la Device with bare fibre pigtail

Y

t/

Fibre cladding

\ IRef.: Fibre cladding

z—

a

L .— -—-—-—-—

Figure 1a

lb Device with fibre pigtail connector attached

Ref.: Connector

Y

tConneotor

I /“

a ———— —--

z—- -L. .— —-— -—- —-— -—-

———- --

\\

‘W

Figure lb

5

IS 14901 (Part 5) :2004IEC 60747-5 (1992)

Example 11:Packaged devices (emmer or detector), without pigtai/

Ila Device with window, but without/ens

Y

At/

Package outline

I

z—-

Figure 2a

Ilb Detector with window, but without lens (chip referenced)

a

-Ii!!!ii‘i%-1 ) af -—— .— --Z \-—-— -— —-—- —-

\\

\ rv L II lAJzL-

Ref.: Packageoutline

Radiation aanaitive chip,●rea defined with referenceto package outfine

n.

AL .

window thickness

aperture angle

refractive indax of window material

distance between window back plana andchip plane

Figure 2b

I

.

I

IS 14901 (Part 5) :2004IEC 60747-5 (1 992)

Ilc

z

Deteotor with lensY

t

a

.1 ----~- —-— .—-— -—-— -

Ild IRED

Ref.: Package outline

The intamal optical system

shall ba speoifiacf

YFigure 2C

with optics/ pofi that is not /ocated on the output window of the

‘ka

T----—

z~- —-— -—. — .—

package

Figure 2d

IS 14901 (Part 5) :2004IEC 60747-5 (1992)

Example Ill: Non-packaged devices (emitter or detector) without pigtai/

z/“

Ref.: Chip or chip carrier

outlines

NOTE - Angle a may not be

required for dataotors.

J‘\, \\+xFigure 3

3.3 (Optics/) c/adding (IEV 731-02-05)

That dielectric materiai of an optical fibre surrounding the core.

4 Terms related to ratings and characteristics

4.1 General

4.1.1 Switching times

NOTE - The specified lower and upper limit values referred to in conoapts 4.1.1.1 to 4.1.1.6 are usually

10% and 90% of the amplitude of the pulses (see figure 4).

4.1.1.1 Turn-on de/ay time td(on)

The time intervai between the lower specified vaiue on the ieading edge of the appliedinput puise and the iower specified vaiue on the ieading edge of the output puise.

4.1.1.2 Rise time tr

The time intervai between the iower specified value and the upper specified vaiue on theieading edge of the output puise.

4.1.1.3 Turn-on time ton

The time interval between the iower specified vaiue on the ieading edge of the appiiedinput puise and the upper specified vaiue on the ieading edge of the output pulse.

ton = ‘d(on) + ‘r

8

4.1.1.4 Tum-Off delay time ‘@ff)

The time interval between the upper

is 14901 (Part 5): 2004IEC 60747-5 (1992)

specified value on the trailing edge of the appliedinput pulse and the upper specified value on the trailing edge of the oufput pulse.

NOTE - If theturn-offdelaytimeis mainlyduetocarrierstorage (e.g. in the output transistor of a photo.coupler), the term “(carrier) storage time” and the letter symbol ?s are in use.

4.1.1.5 Fall time tf

NOTE - The time interval between the upper specified value and the lower specified value on the trailingedge of the output pulse.

4.1.1.6 Turn-off time toff

The time interval between the upper specified value on the trailing edge of the appliedinput pulse and the lower specified value on the trailing edge of the output pulse.

toff = ‘d(off} + tf

Relative input

t100% -----

Upperspecifiedvalue ----

Lowerspecifiedvalue --

I I tI II .1I I

t

I IRelative output I I

I I

100% -- 4-----I

Upper specified value -- J----IIIIIIII

Lower specified value -->

I I tr I ‘‘d(ofl) 1 t‘d(on)~ xl p-+--

I toffd

I I .

Figure 4- Switching times

9

IS 14901 (Part 5) :2004IEC 60747-5 (1 992)

4.2 Photoenvltem

4.2.1 Radiant power, luminous flux

4.2.1.1 Radiant power (of a photoemiffer) @e

The radiant power emitted from the optical poti of the device.

4.2.1.2 Luminous flux (of a photoemitter) @v

The luminous flux emitted from the optical port of the device.

4.2.2 Efficacies

4.2.2.1 Radiant power efficacy qe, qradiant efficacy(of an infrared-emitting diode or a laser diode)

The quotient of the emitted radiant power $e, by the forward current &

NOTE - If no ambiguity is likely to occur, particularly with

qe = $e / (/F . ~F)o the term may be shortened to “radiantpossible.

4.2,2.2 Radiant intensity efficacy q.,

the term IEV 845-01-54: ‘radiant efficiency-efficacy- or “efficacy”. This is nearly always

(of an infrared-emitting dio~h or a laser diode)

The quotient of the emitted radiant intensity /e, by the forward current /F:

~ei= lel/F

4.2,2.3 Luminous flux efficacy TVluminous efficacy(of a light-emitting diode)

The quotient of the emitted luminous flux @v,by the forward current /F:

NOTE - If no ambiguity is likely to occur, particularly with the terms IEV 845-01-55: “luminous efficacy of asource” q“ = QvI (IF . VF), or IEV 845-01-56: “luminous efficacy of a radiation- K = @v1 @e, the term maybe shortened to ‘iuminous efficacy- or ‘efficacy”. This is nearfy always possible.

4.2.2.4 Luminous intensity efficacy qvi(of a light-emitting diode)

The quotient of the emitted luminous intensity Iv, by the forward current IF:

10

..=-..

IS 14901 (Part 5) :2004IEC 60747-5 (1 992)

4.2.2.5 Differential radiant power efficacy qod, qddifferential radiant efficacy(of an infrared-emitting diode or a laser diode)

The radiant power efficacy for small-signal modulation:

l’l~d= d$e t ‘+NOTES

1 if no ambiguity is likely to occur, the shorter term and letter symbol may be used.

2 The term “small-signal modulation efficacy” is in use as synonym.

4.2.2.6 Differential/ radiant intensity efficacy ~~id(of an infrared-emitted diode or a laser diode)

The radiant intensity efficacy for small-signal modulation:

4.2.2.7 Differential/ /Uminous f/ux efficacy qvd, qddifferential luminous efficacy(of a light-emitting diode)

The luminous flux efficacy for small-signal modulation:

~vd = d$v / d/F

NOTES

1 If no ambiguity is likely to occur, the shorter term and letter symbol may be used.

2 The term “small-signal modulation efficacy- is in use as synonym.

4.2.2.8 Differential luminous intensity efficacy ~vid(of a light-emitting diode)

The luminous intensity efficacy for small-signal modulation:

~vid = dlv I dlF

4.2.2.9 Large-signs/ radiant power efficacy qEL, IIL/arge-signs/ radiant efficacy(of an infrared-emitting diode or a laser diode)

The radiant power efficacy for large-signal modulation:

TEL = A(je I AIF

NOTE - If no ambiguity is likely to occur, the shorter term and letter symbol may be used.

4.2.2.10 Large-signs/ radiant intensity eff/cacy qEl~(of an infrared-emitting diode or a laser diode)

The radiant intensity efficacy for large-signal modulation:

11

IS 14901 (Part 5) :2004IEC 60747-5 (1 992)

4.2.2.11 La~ge-signs/ /uminous f/ux efficacy ~v~. qLlarge-signal luminous efficacy(of-a light-emitting

The luminous flux efficacy for

NOTE - If no ambiguity is likely

diode)

large-signal modulation:

to occur, the shorter term and letter symbol may be used.

4.2.2.12 Large-signs/ /uminous intensity efficacy ‘qvlL(of a light-emitting diode)

The luminous intensity efficacy for large-signal modulation:

~v[L = Alvl AIF

4.2.3 Cut-off frequency

4.2.3.1 Small-signal (modulation) cut-off frequency fed, fc(of a photoemitting diode)

The frequency at which, for constant modulation depth of the forward current, the demo-dulated a.c. optical radiant power has decreased to 1/2 of its low-frequency value.

4.2.3.2 Large-signal (modulation) cut-off frequency f~L. fc(of a photoemitting diode)

Under consideration.

4.2.4 Thresho/d current (of a laser diode) /(TH)

The forward current at which the second derivative of the cure showing radiant power @eversus forward current /F has its first maximum (see figure 5).

9eb5d12 1

F I

d2@e—> ~d~ I

I

‘TH ‘F

Figure 5- Threshold current of a laser diode

12

-. .

IS 14901 (Part 5) :2004IEC 60747-5 (1 992)

4.2.5 Spatial radiation diagram and related characteristics (of a photoemitter)

4.2.5.1 Radiation diagram

A diagram that characterizes the distribution of radiant (or luminous) intensity:

/e (or /v) = f(f3) (see figures 6a and 6b)

NOTES

1 Unless otherwise stated, the distribution of the radiant (or luminous) intensity should be specified in aplane. This plane includes the mechanical axis z.

2 If the radiation pattern has a rotational symmetry of the z axis, the radiation diagram shall be specifiedfor one plane only.

3 If the radiation pattern has no rotational symmetry to the z axis, radiation diagrams for variousangles $ shall be specified. Then the x, y and z directions shall be defined by a drawing in the detail specifi-cation.

4.2.5.2 Half-intensity ang/e 91,2

In a radiation diagram, the angle within which the radiant (or luminous) intensity is greaterthan or equal to half of the maximum intensity (see figure 6b).

4.2.5.3 Misalignment angle AO

In a radiation diagram, the angle between the direction for maximum radiant (or luminous)intensity (optical axis) and the mechanical axis z (see figure 6b).

Optical axis _;

z

bI

e

IIII P

Imax \I Mechanical

AO 1

I

Imax / lmax

-3-ellz /

T1

I

ID

II

axis

x/

Figure 6- Radiation diagram and related characteristics

4.2.6 Spectra/ characteristics (of light-emitting diodes and infrared-emitting diodes)(see figure 7)

4.2.6.1 Peak-emission wavelength 1P

The wavelength at which the spectral radiant power is a maximum.

4.2.6.2 Spectral radiation bandwidth Al

4

The wavelength intenral in which the spectral radiant power is greater or equal to half ofits maximum value. 13

IS 14901 (Part 5) :2004lEC 60747-5 (1 992)

4.2.6.3 (Re/ative) parasitic radiant power $@~ParJor hJminOus thx @v(Pa,)

The value of undesired spectral radiant power (or luminous flux) in two specified wave-length ranges that lie below and above the peak-emission wavelength, expressed asa percentage of the radiant power (or luminous flux) at peak-emission wavelength.

NOTE - Specified values refer to the maximum value within each of the specified wavelength ranges.

,100%

‘e (par)(2)

‘e (par) I I IllI 1 I I I 1 b

A ala lplb ‘ L-/a‘Sb I x

x lp Ak ~2p4 e

Figure 7- Spectral characteristics of light-emitting diodes andinfrared-emitting diodes

4.2.7 Spectra/ characteristics (of laser diodes and laser-diode modules) (see

4.2.7.1 Peak-emission wavelength Ap

figure 8)

The wavelength at the peak value of the mode with the maximum spectral radiant power.

4.2.7.2 Spectral radiation bandwidth AA

The bandwidth that includes all wavelengths at which the radiant power is equal to orgreater than a specified percentage of the power at the peak-emission wavelength.

NOTES

1 Unless otherwise stated, the specified percentage is 50 %.

2 The definition allows peak values lower than the specified percentage to be present within thisbandwidth.

14

.__.

IS 14901 (Part 5) :2004IEC 60747-5 (1992)

t’100% ----------------- 1 -----------------

,O%l--.--+{J1!1:Relative radiantpower)U

+w wL Ak J

Figure 8- Spectral characteristics of laser diodes andlaser-diode modules

Wavelength

4.2.7.3 Spectral Iinewidth ALL

The wavelength interval between those points of an emission line at which the spectralradiant power is half of its maximum value.

4.2.7.4 Centra/ wavelength ~

The weighted average of the mode wavelengths:

where:

ki is the wavelength

1

of the i“’hspectral line with i = O for A

aiP

is the amplitude

4.2.7.5 RMS bandwidth AkrmS

The RMS bandwidth is defined by the expression:

\/

i= +cOZ ai x ($-~)’

i=--A~ms =

i= +=

vwhere:

Xi is the wavelength

}

of the i-’h spectral line, with i = O for Zai is the amplitude

P

“-i

T is the central wavelength15

-.. -..

IS 14901 (Part 5) :2004

IEC 60747-5 (1 992)

4.2.7.6 Number of longitudinal modes n~

The number of longitudinalmodes at the band limits.

4.2.7.7 Mode spacing Sm

The difference in wavelength

modes within spectral radiation bandwidth, including the

for two neighboring longitudinal modes.

4.2.7.8 Side-mode suppression ratio SMS

The ratio of:

the radiant power at the peak-emission wavelength OeP, to

the radiant power of the next most intense mode ~e~ (see figure 9).

NOTE - Side-mode suppression ratio is normally expressed as:

SMS = 10.log

()

‘ep [dB]Qe

$,s 4----- ----- ----

Qep

Radiant power

@es -----------

LA/k. *Wavelength

Figure 9- Side-mode suppression ratio

4.2.7.9 Spectral shift (versus current or temperature) AkC

Under consideration./’

4.2.7.10 /nput reflection coefficient s,,


4.2.7.11 Radiant power (of a laser chip or submount) $eOo

See chapter Ill, section eight, subclause 6.1.

4.2.8 Emission source (of a laser diode)

4.2.8.1 Emission source width SW

On the facet of the laser diode, in the direction of the major axis, the width within whichthe radiant intensity is larger than or equal to a specified percentage of the maximumvalue (see figure 1O).

16

IS 14901 (Part 5):2004IEC 60747-5(1992)

~!~TEs

1 The direction of the major axis is the direction parallel to the PN junction plane.

2 Unless othewise stated, tiespecified percentage is5OY0.

4.2.8.2 Emission source height Sh

On the facet of the laser diode, in the direction of the minor axis, the height within whichthe radiant intensity is larger than or equal to a specified percentage of the maximumvalue (see figure 1O).

NOTES

1 The direction of the minor axis is the direction perpendicular to the PN junction plane.

2 Unless otherwise stated, the specified percentage is 50 %.

4.2.8.3 Astigmatism d~

An astigmatism of the emitted radiation that comes from a difference in curvature of thewave front in the directions of the major and minor axis, respectively, whereby usually thecentre of the curvature in the direction of the major axis is farther behind the facet than inthe other direction.

NOTES

1 Theastigmatismcanbe representedby theCurvatured~= ~ - b of a convex virtual emission source(see figure 1O).

2 The value of dA is calculated from the difference in position of the focussing Iena when the focusaedbeam diameter is m~nimum in each of the two directions.

Minor axis

t

Major axie

Vlrtuai emission souroe

/Sectionai view of the beamin the piane of the facet

Ii

J“i# I

Optical axis

Figure 10- Emission source of a laser diode

4.2.9 Noise characteristics (of laser diodes)

4.2.9.1 Relative intensity noise RIN


17

.- .&&-

IS 14901 (Part 5) :2004IEC 60747-5 (1992)

4.2.9.2 Carrier-to-noise ratio CIN

The quotient of:

the mean square radiant power at the speciiied frequency, to

- the mean square radiant power fluctuations normalized to a frequency band of unitwidth centered on the carrier frequency.

4.2.9.3 K-factor; mode partition noise


4.2.10 Additions/ characteristics (of laser-diode modules)

4.2.10.1 Tracking error


4.3 Photosensitive devices

4.3.1 Output currents (of a photodiode)

NOTE - ThesubscriptsD fordarkandP forphotoarestillunderconsideration.

4.3.1.1 Reverse current (under optical radiation) IR(H)or /R~e~,/R

The total reverse current when the photodiode is exposed to incident optical radiation.

4.3.1.2 Dark current IR(D)

The reverse current in the absence of incident optical radiation.

4.3.1.3 Photocurrent 1P

That part of the reverse current that is caused by incident optical radiation:

‘P = ‘R(H) - ‘R(D)

4.3.2 Output currents (of a phototransistor)

4.3.2.1 Col/ector current (under optical radiation) /c[l+~or Ic{e), Ic

The total collector current when the phototransistor is exposed to incident opticalradiation.

4.3.2.2 Co//ector-emitter dark current lc~o

The collector current in the absence of incident optical radiation.

18

II Iil i I .,...1..“.-i.—

IS 14901 (Part 5): 2004IEC 60747-5 (1992)

4.3.3 Sensitivity

4.3.3.1 (Diode) sensitivity SD, S(of a photodiode)

The quotient of

- the

- the

NOTE -

4.3.3.2

photocurrent /P, by

irradiance Ee (or illuminance Ev) at the optical port of the photodiode.

1P 1PsD=— or sD=—

E. Ev

If no ambiguity is likely to occur, the shorter term and letter symbol may be used.

(Fibre-input) sensitivity SFD, S(of a photodiode irradiated [illuminated] from the front end of an optical fibre)(see figure 11)

The quotient of

- the photocurrent /P, by

the radiant power $0 (or luminous flux $V)values of the radial disdacement r and the

emitted from the optical fibre, for specifieddistance z of the front end of the optical

fibre, relative to the optical port of the photodiode.

1P 1Ps FD

. — or sFD= —

~e $“

NOTES

1 If no ambiguity is likely to occur, the shorter term and letter symbol may be used.

2 In specifications, usually curvesaregivenshowin9SFDasa functionofr andz.

Optloalportr P.hotoaurrent $

—

I~

Total radiant power t. ~emfttad from the fibre

Figure 11- Fibre-input sensitivity SFD

4.3.4 Cut-off frequency (of a photodiode)

4.3.4.1 Smai/-signa/ cut-off frequency ‘cd, ‘C

The frequency at which, for constant small signal modulation depth of the input radiantpower, the demodulated signal power has decreased to 1/2 of its @w-frequency value.

19

T

“7.

IS 14901 (Part 5) :2004IEC 60747-5 (1 992)

NOTE - When, for the measurement of fc, the photocurrent of the photodiode is observed, a 1-to-2decrease in radiant power corresponds to a 1-to-2 decrease in photocurrent. Therefore, when the latter ismeasured as a voltage drop across a load resistance, the criterion of a 1-to-2 decrease applies also ta thevoltage, provided the load resistance is small compared with the output resistance of the photodlode.

4.3.4.2 Lar.ge-sigf7a/cut-off frequency fcL, fc

The frequency at which, for constant large signal modulation depth of the input radiantpower, the demodulated signal power has decreased to 1/2 of its low-frequency value.

NOTE - The note to subclause 4.3.4.1 applies accordingly.

4.3.5 Spatial sensitivity diagram and related characteristics(of photosensitive devices)

4.3.5.1 Sensitivity diagram

As diagram that characterizes the distribution of sensitivity:

S = f(e) (see figures 12a and 12b)

NOTES

1 Unless otherwise stated, the distribution of sensitivity should be specified in a plane. This planeincludes the mechanical axis z.

2 If the sensitivity pattern has a rotational symmetry to the z axis, the sensitivity diagram shall be speci-fied for one plane only.

3 If the sensitivity pattern has no rotational symmetry to the z axis, sensitivity diagrams for variousangles O shall be specified. Then the x, y and z directions shall be defined by a drawing in the detail specifi-cation.

4.3.5.2 Half-sensitivity angle 0s12

In a sensitivity diagram, the angle within which the sensitivity is greater than or equal tohalf of the maximum sensitivity (see figure 12b).

4.3.5.3 Misalignment angle AO

In a sensitivity diagram, the angle between the direction for maximum sensitivity (opticalaxis) and the mechanical axis z (see figure 12b).

F7/

e

IIIIII

Q’

I

\\ IY

XL

9

Optioaf ●xfe\ ;

Meohanioel exia

/’

T

I

Figure 12- Sensitivity diagram and related characteristics20

,11 !!!!!!!,. .-—. —

IS 14901 (Part 5) :2004IEC 60747-5(1992)

4.3.6 Spectral characteristics(of photosensitive devices)

4.3.6.1 Peak-sensitivity wavelength lP

The wavelength at which the spectral sensitivity is a maximum.

4.3.7 Multiplication factor M(of an avalanche photodiode)

The ratio of:

the photocurrent under a condition at which carrier multiplication takes place (/Rt atVR,), to

the photocurrent under a condition at which no carrier multiplication takes place (/R2at VR2):

‘RIM=— (see figure 13)

‘R2

I

‘R2 ‘RI

Figure 13- Multiplication factor of an avalanche diode

4.3.8 Excess noise factor(of an avalanche photodiode)


4.4 Photocouplers, optocouplers

4.4.1 Current transfer ratio

4.4.1.1 Static va/ue of the (forward) current transfer ratio hF(CtrJ,h~

The ratio of the d.c. output current to the d.c. input current, the output voltage being heldconstant.

NOTE - The abbreviation CTR(d.c.) is sometimes used instead of a symbol.

21

IS 14901 (Part 5) :2004IEC 60747-5 (1 992)

4.4.1.2 Small-signal short-circuit (fo~ard) current transfer ratio hflCr~)~hf

The ratio of the a.c. output current to the a.c. input current, the output being short-circuited to a.c.

NOTE - The abbreviation CTR(a.c. ) is sometimes used instead of a symbol.

4.4.2 Cut-off frequency fct~

The frequency at which the modulus of the small-signal current transfer ratio has de-

creased to l/~= of its low-frequency value.

4.4.3 /nput-to-output capacitance C,.

The total capacitance between all input terminals connected together and all output termi-nals connected together.

4.4.4 Isolation resistance R,.

The resistance between all input terminals connected together and all output terminalsconnected together.

4.4.5 Isolation voltage

The voltage between any specified input terminal and any specified output terminal.

4.4.5.1 D.C. isolation voltage V,.

The value of the constant isolation voltage.

4.4.5.2 Repetitive peak isolation voltage VIORM

The highest instantaneous value of the isolation voltage including all repetitive transientvoltages, but excluding all non-repetitive transient voltages.

NOTE - A repetitive transient voltage is usually a function of the circuit. A non-repetitive transient voltageis usually due to an external cause and it is assumed that its effect has completely disappeared before thenext non-repetitive voltage transient arrives.

4.4.5.3 Surge isolation voltage Vlo~M

The highest instantaneous value of an isolation voltage pulse of short time duration and ofspecified waveshape.

5 Letter symbols


22

IS 14901 (Part 5):2004IEC 60747-5(1992)

CHAPTER Ill: ESSENTIAL RATINGS AND CHARACTERISTICS

SECTION ONE - LIGHT-EMITTING DIODES(Excluding devices for fibre optic systems or subsystems

dealt with in section seven)

1 Type

Ambient-rated or case-rated light-emitting diode.

2 Semiconductor material

Gallium arsenide-phosphide, etc.

3

4

4.1

4.2

Colour

Detaiis of outiine and encapsulation

iEC and/or nationai reference number of the outiine drawing.

Method of encapsulation: giass/metai/piastic/other.

4.3 Terminai identification and indication of any connection between a terminai and thecase.

5 Limiting values (absolute maximum system) over the operating temperaturerange, uniess otherwise stated

5.1 Minimum and maximum storage temperatures (T~tJ.

5.2 Minimum and maximum operating

5.3 Maximum reverse VOiW9e ( VR).

ambient Or CaSe @MfX?ratUre ( ~amb or ~,.~e).

NOTE - Not applicable to dual-diode devices connected anode-to-cathode and cathode-to-anode.

5.4 Maximum continuous forward current (/F) at an ambient or case temperature ofand derating curve or derating factor.

25 “C

5.5 Where appropriate, maximum peak forward current (/FM) at an ambient or case tem-perature of 25 ‘C, under specified puise conditions.

6 Electrical characteristics

For muitipie diodes, the characteristics should be given for each diode. For speciai applica-tions, additional characteristics may be required.

23

IS 14901 (Part 5) :2004IEC 60747-5 (1 992}

Conditions at Tamb

Ref. Characteristics or Tca~@= 25 “C, Notes Symbols Requirement!

unless otherwise stated

6.1 Forward voltage IF specified (d.c. or pulse) VF Max.

6.2 Reverse current VR specified 1 IR Max.

6.3 luminous intensity along the /F specified (d.c. or pulse) 2, 3 Iv Min.

defined mechanical axis

6.4 Peak emission wavelength /F specified (d.c. or pulse) ap Min. Max.

6.5 Spectral radiation Half value of peak emission, Ak Max.

bandwidth (where appropriate) with IF as specified in

subclause 6.4

6.6 Switching times Max.

(where appropriate)

6.7 Half-intensity angle Max.

(where appropriate)

NOTES

1 Not applicable to dual-diode devices connected anode-to-cathode and cathode-to-anode.

2 if the included solid angle over which the intensity is measured is not negligible, it should bespecified.

3 For diodes intended for use in multi-diode arrays, maximum luminous intensity is alao required.

7 Supplementary information

7.1 Radiation diagram

A diagram graphically expressing typical luminous intensity versus viewing angle, andusing either polar or rectangular co-ordinates.

7.2 Spectra/ diagram (where appropriate)

A diagram graphically expressing typical luminous intensity versus wavelength.

7.3 Mechanical information

Mounting and soldering conditions, where appropriate.

24

IS 14901 (Part 5):2004IEC 60747-5(1992)

SECTION TWO - INFRARED-EMITTING DIODES(Excluding devices for fibre optic systems or subsystems,

dealt with in section seven)

1 Type

Ambient-rated or case-rated infrared-emitting diode.


Gallium arsenide, etc.

3 Details of outllne and encapsulation

3.1 IEC and/or national reference number of the outline drawing.

3.2 Method of encapsulation: glass/metal/plastic/other.

3.3 Terminal identification and indication of any connection between a terminal and thecas.

4 Limiting values (absolute maximum system) over the operating temperaturerange, unless otherwise stated

4.1 Minimum and maximum storage temperature (T~t9).

4.2 Minimum and maximum operating ambient or case temperature (T.mb or TCaJ

4.3 Maximum reverse voltage ( VR).

4.4 Maximum continuous forward current (IF) at an ambient or case temperature of 25 ‘Cand derating curve or derating factor.

4.5 Where appropriate, maximum peak forward current (/pM) at an ambient or casetemperature of 25 “C, under specified pulse conditions.


“-i‘,

For special applications, additional characteristics may be required.

25

.,- .-

IS 14901 (Part 5):2004IEC 60747-5(1992)

Conditions at Tati

Ref. Characteristics or Tmso = 25 “C, Notes Symbols Requirement:


5.1 Foreward voltage IF specified (d.c. or pulse) VF Max.

5.2 Reveras current V~ specified ‘R Max.

5.3 Radiant power output or IF specified (d.c. or pulse) 1 Q@ Min.radiant intensity along the 1. Min.

defined mechanical axis

5.4 Peak emission wavelength IF specified (d.c. or pulse) kp Min. Max.

5.5 Spectral radiation bandwidth Half value of peak emission, AX Max.

(where appropriate) with $ as specified insubclause 5.4

5.6 Switching times Max.

(where appropriate)

5.7 Half-intensity angle Max.

(where appropriate)

5.8 Capacitance (where appropriate) Max.

NOTE - If the included solid angle over which the intensity is measured is not nagfiiible, it should bespecified.


6.1 Radiation diagram

A diagram graphically expressing typical radiant power output or radiant intensity versusangle with respect to the defined mechanical axis, and using either polar or rectangularcoordinates.

6.2 Spectra/ diagram (where appropriate)

A diagram graphically expressing typical radiant power output or radiant intensity versuswavelength.

6.3 Mechanical information

Mounting and soldering conditions, where appropriate.

26

IS 14901 (Part 5) :2004IEC 60747-5 (1 992)

SECTION THREE - PHOTODIODES(Excluding devices for fibre optic systems or subsystems)

1 Type

Ambient-rated or case-rated photodiode intended for small-signal and switching applica-tions.


Silicon, etc.

3 Details of outline and encapsulation



3.3 Terminal identification and indication of any connection between a terminal and thecase.


4.1 Minimum and maximum storage temperatures (T~J.

4.2 Minimum and maximum operating ambient or case temperature (Ta~b or TM~e ).

4.3 Maximum reverse voltage (VJ.

4.4 Where appropriate:

maximum totaland

- derating factor

power dissipation (PtOJ up to ambient or case temperature of 25 ‘C,

above 25 ‘C (KJ or derating curve.

27

IS 14901 (Part 5) :2004IEC 60747-5 (1 992)


Conditions at ~.~~

Ref. Characteristics or TCa~e= 25 “C, Notes Symbols Requirements


5.1 Reverse current under VR specified 1‘Rs’)

Min.

irradiation ~v or E, specified ‘r R(e)

5.2 Dark current VR specified, ~e = O IR Max.

5.3 Dark current VR specified, ~. = O at a IR Max.

specified high temperatureT~ti or Tca,e

5.4 Where appropriate, VR specified, E. specified, s Min.spectral sensitivity at a short wavelength

k, specified

and at a longer wavelength s Min.L2 specified

5.5 Switching times Specified circuit(where appropriate):rise time and specified value of Vfft t, Max.

fall time Ev or Ee specified t Max.

or: Specified circuit,turn-on time and specified value of V~, ton Max.turn-off time E, or Ea specified toff Max.

NOTE - Illumination by standard illuminant A (according to IEC Publication 306-1) emitted from afilament tungsten lamp with a colour temperature T = 2655,6 K or with radiation from a defined mono-chromatic source.

6 Supplementary Information

6.1 Diagram of typical sensitivity

6.2 Typical spectral diagram

A diagram graphically expressing relative spectral sensitivity versus wavelength.

SECTION FOUR - PHOTOTRANSISTORS(Excluding devices for fibre optic systems or subsystems)

1 Type

Ambient-rated or case-rated phototransistor intended for small-signal and switching appli-cations.


Silicon, etc.

28

1

IS 14901 (Part 5) :2004IEC 60747-5 (1 992)

3 Polarity

NPN/PNP.


4.1 IEC and/or national reference number of the outiine drawing.

4.2 Method of encapsulation: giass/metal/plastic/other.

4.3 Terminai identification and indication of any connection between a terminai and thecase.

5 Limiting vaiues (absoiute maximum system) over the operating temperaturerange, uniess otherwise stated

5.1 Minimum and maximum storage temperature (T.,J.

5.2 Minimum and maximum operating ambient or case temperatures (Ta~b or TCa~e).

5.3 Maximum collector-emitter voltage with zero base current ( ‘~Eo)”

5.4 Where an external base connection is present:

5.4.1 Maximum coiiector-base voitage with zero emitter current ( VCBO).

5.4.2 Maximum emitter-base voltage with zero coiiector current ( VEBO).

5.5 Where no external base connection is present:

Maximum emitter-coiiector VOihge ( ~Eco).

5.6 Maximum continuous Coiiector current (/c).

5.7 Where appropriate:

maximum total power dissipation (PtOJup to ambient or case temperature of 25 “C,and

- derating factor above 25 ‘C (KJ or derating curve.

29

IS 14901 (Part 5) :2004IEC 60747-5 (1 992)


Conditions ar Tamb

Ref. Characteristics or Tca~e = 25 “C, Notes Symbols Requirement


6.1 Collector current under VCE specified, 18 = O 1 ‘C H))

Min. Max.”

irradiation Ev or E, specified ‘r c(o)

6.2 Collector-emitter Vc~ specified, IB = O ‘CEO Max.

dark current E,=O

6.3 Collector-emitter VCE specified, IB = O lCEO Max.

dark current Ee = 0, at a specified hightemperature Tati or Tcaso

6.4 Collector-emitter IC specified, IB = O, ‘( OR)CEO Min.

breakdown voltage Ee=o

6.5 Emitter-base breakdown voltage IE specified, Ee = O v(eR)Eeo Min.

or, where no base connection ispresent, emitter-collector break-down voltage ‘( FIR)ECO Min.

6.6 Collector-emitter 1=specified, /0 = O, 1 vCEsal Max.saturation voltage E, or E. specified, preferably

as in subclause 6.1

6.7 Where appropriate, IB = O, Ee specified,spectral sensibility at a short wavelength Xl s Min.

specified and at a longerwavelength k2 specified s Min.

6.8 Switching times(where appropriate):rise time and Specified circuit, specified t, Max.

fall time values of Vc~ and Ic , E, or

E, specified 4 Max.

orturn-on time and Specified circuit, specified t Max.turn-off time

onvafues of VCE and /c,

E, or Ee specified torf Max.

“ Where appropriate.

NOTE - Illumination at standard illuminant A (according to fEC Publication 306-1) emitted from atungsten filament lamp with a colour temperature T = 2855,6 K or with radiation from a daffnad mono-chromatic source.


7.1 Diagram 0/ typical sensitivity

7,2 Typical spectral diagram

A diagram graphically expressing relative spectral sensitivity versus wavelength.

--—

IS 14901 (Part 5) :2004IEC 60747-5 (1992)

SECTION FIVE - PHOTOCOUPLERS, OPTOCOUPLERS(WITH OUTPUT TRANSISTOR)

1 Type

Ambient-rated or case-rated photocouplers, optocouplers, with transistor output, for signal-isolation applications.


/nput diode: gallium arsenide, aluminium arsenide, etc.

output transistor: silicon, etc.

3 Polarity of the output resistor




4.3 Terminal identification and indication of any connection between a terminal and thecase.

5 Llmltlng values (absolute maximum system) over the operating temperature@range, unless otherwke stated

Indicate any qualifications such as time, frequency, pulse duration, humidity, etc.

5.1 Minimum and maximum storage temperatures ( T,,*J.

5.2 Minimum and maximum ambient or reference-point operating temperatures ( Tambor T~J,

5.3 Maximum soldering temperature ( T~ld).

Maximum soldering time and minimum distance to case should be specified.

5.4 Maximum continuous (direct) reverse input voltage (vR).

5.5 Maximum collector-emitter voitage, with the base open-circuited ( VCEO).

5.6 Maximum coliector-base voltage, where an external base connection is present,with the emitter open-circuited ( VCBO).

#

--..

5.7 Maximum emitter-base voltage, where an external base connection is present, withthe collector open-circuited ( VEBO).

31

IS 14901 (Part 5) :2004IEC 60747-5 (1 992)

or:

5.8 Maximum emitter-collector voltage, where no external base connection is present(v~~~).

5.9 Maximum continuous (direct) or repetitive peak isoiation voltage ( Vlo or VIORM).

The waveshape and repetition rate should be specified.

5.10 Where appropriate, maximum surge isolation volta9e (VlosM).

This should be specified for pulses of both polarities having the waveshape shown infigure 14.

u50% Viosw ————10% ~osM ———0l,2@-’l-

5.11 Maximum continuous collector current (/c).

5.12 Maximum continuous forward input current (/F) at an ambient or reference-pointtemperature of 25 “C and derating curve or derating factor. J

5.13 Maximum peak fonvard input current (/FRM) at an ambient or reference-Pointtemperature of 25 “C and under specified pulse conditions.

5.14 Maximum power dissipation (Ptrn) of the output transistor at an ambient orreference-point temperature of 25 ‘C and a derating cuwe or derating factor.

One puke per second

———— ———— ———

Figure 14- Test voltage

5.15 Maximum total power dissipation of the package (PtOJ at an ambient or reference-point temperature of 25 “C and derating cuwe or derating factor.

32

.

--- —-

II 11 II 1,--,, M-.———

IS 14901 (Part 5) :2004IEC 60747-5 (1 992)


Conditions at T-mb

?ef. Characteristics or Tins@= 25 ‘C, Notes Symbols Requirements


6.1 Input diode forward voltage IF specified VF Max.

6.2 Input diode reverse current V~ specified IR Max.

6.3 Collector-emitter dark current VCE specified, IF = O ICEO Max.

IB = O (base open circuit)or, where appropriate*, collector- VCBspecified, IF = O, ICBO Max.base dark current IE=O

6.4 Collector-emitter dark current VCEspecified, IF and IB = O, ICEO Max.T●ti or Trofspecified

or, where appropriate*, collector- VCBspecified, IF= O,base dark current lE =0

T●h or T,d specified ICBO Max.

6.5 Collector-emitter saturation lF and /c specified, IB = O vCEsat Max.voltageor, where appropriate*, collector- IF and /c specified, IB = O vCs Max.base voltage

6.6 Current transfer ratio IF or Ic and Vc~ specified, h~ or Min. Max.IB=O CTR (d.c.)

6.7 Where appropriate, differential IF or Ic and VCE specified, h, or Min. Max.current transfer ratio IB = O, frequency specified CTR (a.c.)

6.8 Isolation resistance between V,. specified 1 ‘lo Min.input and output

6.9 Where appropriate, input-to- f=l MHz, lF=O, lC=O 1 Cio Max.output capacitance

6.10 Where appropriate, switchingtimes:turn-on time and Specified Vcc, IF and RL, ton Max.

turn-off time and nominal IC, test circuit tOtf Max.specified

or:rise time and Specified Vcc, IF and R~, t, Max.fall time nominal IC test circuit tf Max.

specified

6.11 Where appropriate, cut-off If or Ic et VCE specified, 2 Fctr Min.frequency IB=O

● For operation in the diode mode.

NOTES

1 All input terminals should be connected together and all output terminals shorld be connected together.

2 The cut-off frequency is the lowest frequency at which the magnitude of the a.c. current transferratio is 0,707 times its value at very low frequency.

7 Supplementary Information


33

IS 14901 (Part 5) :2004IEC 60747-5 (1 992)

SECTION SIX - LASER DIODES

1 Type

Ambient-rated or case-rated laser diodes for the following applications:

Type A: generalType B: focussed laser beamType C: optical digital transmissionType D: optical analogue transmission

2 Semiconductor

2.1 Material

Material such as GaAs, GaAIAs, lnGaAsP.

2.2 Structure

Structure such as gain guiding, index guiding, distributed feed-back.

3 Details of outllne and encapsulation

3.1 IEC and/or national reference number of the outline .drawing.


3.3 Terminal identification and indication of any electrical connection between a terminaland the case.

3.4 Characteristics of the optical port: orientation relative to mechanical axes, positionrelative to mechanical axes, area, numerical aperture.

3.5 Information on the pigtail fibre (where appropriate): type of fibre, kind of protection,connector, length.


4.1 Minimum bend radius of the pigtail, where appropriate.

4.2 Maximum pull force pigtail (fibre or cable), where appropriate, in the direction of theaxis of the input pigtail (fibre or cable).

4.3 Minimum and maximum storage temperatures (T~tJ

4.4 Minimum and maximum operating temperatures.

4.4.1 Ambient or case temperature (Tambor T&.,).

34

IS 14901 (Part 5) :2004IEC 60747-5 (1 992)

4.4.2 Submount temperature, where appropriate ( T~Ub).

4.5 Maximum soldering temperature (soldering time and minimum distance to case)

(T~lJ.


4.7 One or more of the following at an ambient or case temperature of 25 “C togetherwith a derating curve or derating factor with temperature:

- Maximum continuous forward current (/FM).

- Maximum continuous radiant power (@eM).

Maximum pulsed forward current at stated frequency and puls@duration ($M).

- Maximum pulsed radiant power at stated frequency and puls@duration ($QM).

5 Electrical and optical characteristics

Radiant power shall be specified as continuous or pulsed as appropriate to the device. A/Findicates a forward current above the measured threshold current /f~H~of the device beingmeasured.

Conditions at T’ti Types

Ref. Characteristics or Tease= 25 “C, SymbolsA B c D Requi-unless otherwise stated rements

5.1 Foreword voltage IF or $. specified VF x x x x Max.

5.2 Threshold current ‘(TH) x x x x Min.& max.

5.3 Radiant power al ‘(TH) *oITU) x x x x Max.

threshold

5.4.1 Foreward current $0 specified AIF ‘1) x J( x x Max.

above threshold

5.4.2 Foreward current qmspecified, AIF ‘2) x J( x x Max.

above threshold T= Ttisc max.or Tambmax.

5.5 Differential efficiency $0 or AIF specified qd x x x x Min.& max.

5.6 Peak emission AIF or $, specified kp x x x x Min.wavelength & max.

NOTES

1 CW-operation.

2 In modulation.

35

. .

1

IS 14901 (Part 5) :2004IEC 60747-5 (1 992)

Conditions at Tamb Types

?ef. Characteristics or Tca~e = 25 “C, Symbols Require.A B c D

unless otherwise stated ments

5.7.1 Spectral radiation AIF or o. specified Al x x x x Min.

bandwidth & max.

or:5.7.2 Number of longitudinal AIF or Qe specified nm x x x x Min.

modes and mode spacing & max.

‘m x x x x Min.& max.

5.7.3 Spectral linewidth, AIF or IPespecified (Under x x Max.

where appropriate consideration)

5.8 Half-intensity angle in AIF or IPespecified 3,2 (1)0 x x Max.

two specified planes(without pigtail)

,,2 (2)

5.9 Misalignment angle AIF or 1$0specified Aex Max.

5.10.1 Emission source size AIF or $Ie specified, Sw and x Min.

(without pigtail), references axes Sh & max.

width and height specified

5.10. 2 Astigmatism AIF or I$e specified, ‘Ax Max.

(without pigtail) reference axesspecified

5.11 Differential resistance Alr or A$I~ specified ‘dx x Max.

5.12 Switchin$ times Bias conditions(AIF or ACIe)specified

5.12. 1 Rise time and fall time tr , If x x Max.

or:5.12. 2 Turn-on time and Input pulse current, t ‘off

x x Max.on ‘

turn-off time width and duty specified

5.13 Small-signal cut-off A/F or Qe specified fc x Min.

frequency

5.14. 1 Relative intensity noise Qe, fO,AfN specified RIN x Max.

(without pigtail)

5.14. 2 Carrier to noise ratio IPe, fO,At fm, m specified C/N x x Max.

NOTES

1 CW operation.

2 Modulated.

36

..

IS 14901 (Part 5):2004IEC 60747-5(1992)


6.1 Spectral shift as a function of temperature.

6.2 Total capacitance.

6.3 Total inductance.

6.4 S1, parameter.

SECTION SEVEN - LIGHT-EMITTiNG DIODESAND lNFRARED-EMiTTiNG DiODES

FOR FIBRE OPTIC SYSTEMS OR SUBSYSTEMS

1 Type

Ambient-rated or case-rated light-emitting or infrared-emitting diode with or without opticaifibre pigtail for fibre optic systems or subsystems.

2 Semiconductor materiai

GaAs, GaAIAs, inGaAsP, lnP, etc.

3 Detaiis of outiine and encapsulation

3.1 IEC and/or national reference number of outiine drawing.

3.2 Method of encapsulation: glass/metal/piastic/other.

3.3 Terminal identification and indication of any electrical connection between a terminaiand the case.

3.4 For devices with pigtails, information on output opticai fibre pigtaii structure, fibreminimum bend radius and the end preparation of the optical fibre, inciuding connector. Forexample, kind of fibre type, core diameter, numericai aperture and length of the outputoptical fibre.

4

4.1

4.2

Limiting vaiues (absoiute maximum system) over the operating temperaturerange, unless otherwise stated

Minimum and maximum storage temperatures (T~J.

Minimum and maximum ambient or case temperatures ( ‘~~b or TCaJ.

-i

37

7.-” .,

IS 14901 (Part 5) :2004IEC 60747-5 (1 992)

4.3 Maximum soldering temperature ( ‘~lfj).

Maximum soldering time and minimum distance to case should be specified.


4.5 Maximum continuous forward current at an ambient or case temperature of 25 ‘C(/F) and derating curve or derating factor.

4.6 Where appropriate, maximum repetitive peak forward current at an ambient or casetemperature of 25 “C, under specified pulse conditions (/FRM).

4.7

4.8(T(vj)).

Maximum power dissipation at an ambient or case temperature of 25 ‘C (PtOJ.

Where appropriate, maximum virtual junction temperature, for case-rated devices

38

IS 14901 (Part 5] :2004IEC 60747-5 (1992)

5 Electrical and optical characteristics

Conditions at Tamb

IS 14901 (Part 5) :2004IEC 60747-5 (1992)

Conditions at T,mb

Ref. Characteristics or TCaSa= 25 “C, Notes Symbols Requirements


5.8 For devices without pigtail:

Half intensity angle IF specified 1 91/2 Min. Max.

(where appropriate)


Misalignment angle between IF specified 1 A8 Max.

optical axis and specifiedmechanical axis(where appropriate)

5.10 For devices with pigtaik:

Cone angle from the end of IF specified 1 ec Max.

pigtail

5.11 Distortion andlor linearity (Under consideration)

5.12 Peak emission wavelength IF specified Lp Min. Max.

and:

Typical curve or coefficientof change of peak emissionwavelength versus temperature

5.13 Spectral radiation bandwitdh IF specified 3 AL Max.

5.14 Either:Switching times:

● Rise time

}

t, Max.

. Fall time IF specified t Max.

● Delay time ‘d Max.

(where appropriate)

or:

Cut-off frequency of radiant IF specified fc Min.

power or intensity (underconsideration).


Emission source size andlocation by reference to thepackage

For notes, see page 101.

40

IS 14901 (Part 5) :2004IEC 60747-5 (1 992)

Conditions ar T.mb

Ref. Characteristics ~a~e= 25 “C,or T Notes Symbols


5.16 Parasitic emission levels IF specified (d.c. or pulse)

between specified wavelengths(where appropriate)

5.17 Typical radiation diagram

NOTES

1 Terms or letter symbols are under consideration.

2 Where appropriate.

3 Half value of peak emission with $ as specified in subclause 5.12.

Requirement!

*

Max.

6 Supplefnentaty information

Underconsideration.

SECTION EIGHT - LASER MODULE WITH PIGTAILS

1 Type

The laser module consists of following basic parts:

laser diodepigtailphotodiodesthermal sensorPeltier element }

2 Semiconductor

2.1 Material

laser diode e.g. GaAs, GaAIAs, lnGaAsP, lnPphotodiode e.g. Ge, Si, GalnAsthermal sensor 1where appropriatePeltier element2.2 Structure

Laser diode, e.g.: gain guided, index guided, distributed feedback, etc.

where appropriate

41

. . -

IS 14901 (Part 5) :2004IEC 60747-5 (1992)




3.3 Terminal identification and indication of any electrical connection between a terminaland the case.

3.4 Information on the pigtail fibre,length.

3.5 Information on the heatsinking of

e.g.: type of fibre, kind of protection, connector,

the package.

4 Limiting values (absolute maximum system) over the operatingrange, unless otherwise stated

General conditions

4.1 Minimum and maximum storage temperatures (T~tJ.

4.2 Minimum and maximum operating case temperatures (TCJ.

4.3 Minimum and maximum operating submount temperature (T~Ub).

4.4 Maximum soldering temperature (soldering time and minimum(T~lJ

temperature

distance to case)

4.5 Minimum bend radius of pigtail (at specified distance from the case) (r).

4.6 Shock (maximum acceleration and pulse duration).

4.7 Vibration (maximum acceleration and frequency range).

4.8 Tensile force along cable axis:

4.8.1

4.8.2

Untight structure:

Maximum tensile force on fibre (F).

Maximum tensile force on cable (F).

Tight structure:

Maximum tensile force on cable (F).

42

IS 14901 (Part 5) :2004IEC 60747-5 (1 992)

Laser diode

For laser module without Pettier cooler, derating curve or derating factor must be given forone of following parameters, 4.10 to 4.13. For laser module with peltier cooler, ‘~”bequals to 25 “C.


4.10 Maximum continuous forward current ($).

4.11 Maximum continuous radiant power ($e).

4.12 Maximum pulsed forward current at stated freqUOnCyand Pulse duration (/Fp).

4.13 Maximum pulsed radiant power at stated frequency and pulse duration ($@P).

Photodiode


4.15 Maximum forward current (/F).

Therms/ sensor (where appropriate)

4.16.1 Maximum power dissipation (P)

or

4.16.2 Maximum voltage supply (V).

Thermal e/ectric coo/er (where appropriate)

4.17 Maximum cooler current under cooling and heating (/pE).

43

IS 14901 (Part 5) :2004IEC 60747-5 (1 992)

5 Electric and optical characteristics

Conditions at T.ub = 25 “C for

laser with Peltier cooler,?ef. Characteristics Tati or Tease = 25 “C for laser Symbols Requirements

module without Peltier cooler


Laser

diode

5.1 Forward voltage @oor IF specified VF Max.

5.2 Threshold current ‘[TH) Min. Max.

5.3 Radiant power at threshold IF = ITH $o(TU) Max.

5.4 Forward current above @especified AIF Max.

threshold (for laser module T = TC.aa max. or Tambmax.

without Peltier cooler)

5.5 Differential efficacy (for @eor AIF specified qd Min. Max.

laser module without T= TCa,e max. or Tam max.

Peltier cooler)

5.6 Spectral characteristics

5.6.1.1 Peak emission wavelength $0 or AIF specifiedXP (1 ) Win. Max.

CW-operation

5.6.1.2 Spectral radiation bandwidth $0 or AIF specified AA(l) Max.

FWHM CW-operation

w

5.6.1.3 Mode spacing and number of $0 or A/F specified Max.

longitudinal modes CW-operation qm Max.

5.6.1.4 Peak emission wavelength *. or AIF specified A* (2) Min. Max.

un

IS 14901-5 (2004): Semiconductor Devices - Discrete Devices and … · 2018. 11. 15. ·...

Documents

Transcript of IS 14901-5 (2004): Semiconductor Devices - Discrete Devices and … · 2018. 11. 15. ·...