Absolute Maximum Ratings (Per Die)Parameter N-Channel P-Channel Units

ID@ VGS = ±4.5V, TC= 25°C Continuous Drain Current 0.89 -0.65

ID@ VGS = ±4.5V, TC=100°C Continuous Drain Current 0.56 -0.41

IDM Pulsed Drain Current 3.56 -2.6

PD @ TC = 25°C Max. Power Dissipation 1.0 1.0 W

Linear Derating Factor 0.01 0.01 W/°C

VGS Gate-to-Source Voltage ±10 ±10 V

EAS Single Pulse Avalanche Energy 20 34 mJ

IAR Avalanche Current 0.89 -0.65 A

EAR Repetitive Avalanche Energy 0.1 0.1 mJ

dv/dt Peak Diode Recovery dv/dt 4.7 -5.6 V/nsTJ Operating Junction -55 to 150

TSTG Storage Temperature Range

Pckg. Mounting Surface Temp. 300 (for 5s)Weight 0.2 (Typical) g

Pre-Irradiation

°C

A

RADIATION HARDENED LOGIC LEVEL POWER MOSFET SURFACE MOUNT (LCC-6)

www.irf.com 1

LCC-6

IRHLUC7670Z4 60V, Combination 1N-1P-CHANNEL

TECHNOLOGY

Features:5V CMOS and TTL Compatible Low RDS(on)

Fast Switching Single Event Effect (SEE) Hardened Low Total Gate Charge Simple Drive Requirements Ease of Paralleling Hermetically Sealed Light Weight

2N7632UC

Product SummaryPart Number Radiation Level RDS(on) ID CHANNEL

0.75Ω 0.89A N1.60Ω -0.65A P 0.75Ω 0.89A N1.60Ω -0.65A P

IRHLUC7670Z4

IRHLUC7630Z4

100K Rads (Si)

300K Rads (Si)

PD-97268A

International Rectifier’s R7TM Logic Level Power MOSFETsprovide simple solution to interfacing CMOS and TTL controlcircuits to power devices in space and other radiationenvironments.The threshold voltage remains withinacceptable operating limits over the full operatingtemperature and post radiation.This is achieved whilemaintaining single event gate rupture and single eventburnout immunity.

The device is ideal when used to interface directly with mostlogic gates, linear IC’s, micro-controllers, and other devicetypes that operate from a 3.3-5V source. It may also beused to increase the output current of a PWM, voltagecomparator or an operational amplifier where the logic leveldrive signal is available.

IRHLUC7670Z4, 2N7632UC Pre-Irradiation

2 www.irf.com

For footnotes refer to the last page

Source-Drain Diode Ratings and Characteristics (Per N Channel Die)Parameter Min Typ Max Units Test Conditions

IS Continuous Source Current (Body Diode) — — 0.89ISM Pulse Source Current (Body Diode) — — 3.56VSD Diode Forward Voltage — — 1.2 V Tj = 25°C, IS = 0.89A, VGS = 0V trr Reverse Recovery Time — — 65 ns Tj = 25°C, IF = 0.89A, di/dt ≤ 100A/µsQRR Reverse Recovery Charge — — 67 nC VDD ≤ 25V

ton Forward Turn-On Time Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by LS + LD.

A

Note: Corresponding Spice and Saber models are available on International Rectifier Website.

Thermal Resistance (Per N Channel Die)Parameter Min Typ Max Units Test Conditions

RthJA Junction-to-Ambient — — 125 °C/W

Electrical Characteristics For N-Channel Die @Tj = 25°C (Unless Otherwise specified)

Parameter Min Typ Max Units Test ConditionsBVDSS Drain-to-Source Breakdown Voltage 60 — — V VGS = 0V, ID = 250µA

∆BVDSS/∆TJ Temperature Coefficient of Breakdown — 0.07 — V/°C Reference to 25°C, ID = 1.0mAVoltage

RDS(on) Static Drain-to-Source On-State — — 0.75 Ω VGS = 4.5V, ID = 0.56AResistance

VGS(th) Gate Threshold Voltage 1.0 — 2.0 V VDS = VGS, ID = 250µA

∆VGS(th)/∆TJ Gate Threshold Voltage Coefficient — -4.5 — mV/°C gfs Forward Transconductance 0.25 — — S VDS = 10V, IDS = 0.56A

IDSS Zero Gate Voltage Drain Current — — 1.0 VDS= 48V ,VGS= 0V— — 10 VDS = 48V,

VGS = 0V, TJ =125°CIGSS Gate-to-Source Leakage Forward — — 100 VGS = 10VIGSS Gate-to-Source Leakage Reverse — — -100 VGS = -10VQg Total Gate Charge — — 3.6 VGS = 4.5V, ID = 0.89AQgs Gate-to-Source Charge — — 1.5 nC VDS = 30VQgd Gate-to-Drain (‘Miller’) Charge — — 1.8td(on) Turn-On Delay Time — — 8.0 VDD = 30V, ID = 0.89A,tr Rise Time — — 15 VGS = 5.0V, RG = 24Ωtd(off) Turn-Off Delay Time — — 30tf Fall Time — — 12LS + LD Total Inductance — 33 —

Ciss Input Capacitance — 145 — VGS = 0V, VDS = 25VCoss Output Capacitance — 43 — pF f = 1.0MHzCrss Reverse Transfer Capacitance — 2.5 —

nA

nH

ns

µA

Rg Gate Resistance — 8.2 — Ω f = 1.0MHz, open drain

Measured from the center of drain pad to center of source pad

www.irf.com 3

Pre-Irradiation IRHLUC7670Z4, 2N7632UC

For footnotes refer to the last page

Source-Drain Diode Ratings and Characteristics (Per P Channel Die)Parameter Min Typ Max Units Test Conditions

IS Continuous Source Current (Body Diode) — — -0.65ISM Pulse Source Current (Body Diode) — — -2.6VSD Diode Forward Voltage — — -5.0 V Tj = 25°C, IS = -0.65A, VGS = 0V trr Reverse Recovery Time — — 35 ns Tj = 25°C, IF = -0.65A, di/dt ≤ -100A/µsQRR Reverse Recovery Charge — — 9.8 nC VDD ≤ -25V

ton Forward Turn-On Time Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by LS + LD.

A

Thermal Resistance (Per P Channel Die)Parameter Min Typ Max Units Test Conditions

RthJA Junction-to-Ambient — — 125 °C/W

Note: Corresponding Spice and Saber models are available on International Rectifier Website.

Electrical Characteristics For P-Channel Die @Tj = 25°C (Unless Otherwise specified)

Parameter Min Typ Max Units Test ConditionsBVDSS Drain-to-Source Breakdown Voltage -60 — — V VGS = 0V, ID = -250µA

∆BVDSS/∆TJ Temperature Coefficient of Breakdown — -0.06 — V/°C Reference to 25°C, ID = -1.0mAVoltage

RDS(on) Static Drain-to-Source On-State — — 1.60 Ω VGS = -4.5V, ID = -0.41AResistance

VGS(th) Gate Threshold Voltage -1.0 — -2.0 V VDS = VGS, ID = -250µA

∆VGS(th)/∆TJ Gate Threshold Voltage Coefficient — 3.6 — mV/°C gfs Forward Transconductance 0.5 — — S VDS = -10V, IDS = -0.41A

IDSS Zero Gate Voltage Drain Current — — -1.0 VDS= -48V ,VGS= 0V— — -10 VDS = -48V,

VGS = 0V, TJ =125°CIGSS Gate-to-Source Leakage Forward — — -100 VGS = -10VIGSS Gate-to-Source Leakage Reverse — — 100 VGS = 10VQg Total Gate Charge — — 3.6 VGS = -4.5V, ID = -0.65AQgs Gate-to-Source Charge — — 1.5 nC VDS = -30VQgd Gate-to-Drain (‘Miller’) Charge — — 1.8td(on) Turn-On Delay Time — — 23 VDD = -30V, ID = -0.65A,tr Rise Time — — 22 VGS = -5.0V, RG = 24Ωtd(off) Turn-Off Delay Time — — 32tf Fall Time — — 26LS + LD Total Inductance — 33 —

Ciss Input Capacitance — 147 — VGS = 0V, VDS = -25VCoss Output Capacitance — 46 — pF f = 1.0MHzCrss Reverse Transfer Capacitance — 8.1 —

nA

nH

ns

µA

Rg Gate Resistance — 52 — Ω f = 1.0MHz, open drain

Measured from the center of drain pad to center of source pad

IRHLUC7670Z4, 2N7632UC Pre-Irradiation

4 www.irf.com

International Rectifier Radiation Hardened MOSFETs are tested to verify their radiation hardness capability.The hardness assurance program at International Rectifier is comprised of two radiation environments.Every manufacturing lot is tested for total ionizing dose (per notes 5 and 6) using the TO-39 package. Bothpre- and post-irradiation performance are tested and specified using the same drive circuitry and testconditions in order to provide a direct comparison.

International Rectifier radiation hardened MOSFETs have been characterized in heavy ion environment forSingle Event Effects (SEE). Single Event Effects characterization is illustrated in Fig. a and Table 2.

Radiation Characteristics

Fig a. Typical Single Event Effect, Safe Operating Area

Table 1. Electrical Characteristics For N-Channel Device @Tj = 25°C, Post Total Dose Irradiation

Parameter Upto 300K Rads (Si)1 Units Test ConditionsMin Max

BVDSS Drain-to-Source Breakdown Voltage 60 — V VGS = 0V, ID = 250µAVGS(th) Gate Threshold Voltage 1.0 2.0 VGS = VDS, ID = 250µAIGSS Gate-to-Source Leakage Forward — 100 nA VGS = 10VIGSS Gate-to-Source Leakage Reverse — -100 VGS = -10VIDSS Zero Gate Voltage Drain Current — 1.0 µA VDS= 48V, VGS= 0VRDS(on) Static Drain-to-Source

On-State Resistance (TO-39) — 0.60 Ω VGS = 4.5V, ID = 0.56ARDS(on) Static Drain-to-Source On-state

VSD Diode Forward Voltage — 1.2 V VGS = 0V, ID = 0.89A

Resistance (LCC-6) — 0.75 Ω VGS = 4.5V, ID = 0.56A

1. Part numbers IRHLUC7670Z4, IRHLUC7630Z4

Table 2. Typical Single Event Effect Safe Operating AreaLET Energy Range VDS (V)

(MeV/(mg/cm2)) (MeV) (µm) @VGS= @VGS= @VGS= @VGS= @VGS= @VGS=

0V -2V -4V -5V -6V -7V

38 ± 5% 300 ± 7.5% 38 ± 7.5% 60 60 60 60 60 35

62 ± 5% 355 ± 7.5% 33 ± 7.5% 60 60 60 60 30 -

85 ± 5% 380 ± 7.5% 29 ± 7.5% 60 60 60 40 - -

010203040506070

-7-6-5-4-3-2-10

VGS

VD

S

LET=38 ± 5%

LET=62 ± 5%

LET=85 ± 5%

www.irf.com 5

Pre-Irradiation IRHLUC7670Z4, 2N7632UC

International Rectifier Radiation Hardened MOSFETs are tested to verify their radiation hardness capability.The hardness assurance program at International Rectifier is comprised of two radiation environments.Every manufacturing lot is tested for total ionizing dose (per notes 5 and 6) using the TO-39 package. Bothpre- and post-irradiation performance are tested and specified using the same drive circuitry and testconditions in order to provide a direct comparison.

Radiation Characteristics

Fig a. Typical Single Event Effect, Safe Operating Area

International Rectifier radiation hardened MOSFETs have been characterized in heavy ion environment forSingle Event Effects (SEE). Single Event Effects characterization is illustrated in Fig. a and Table 2.

Table 1. Electrical Characteristics For P-Channel Device @Tj = 25°C, Post Total Dose Irradiation

Parameter Upto 300K Rads (Si)1 Units Test ConditionsMin Max

BVDSS Drain-to-Source Breakdown Voltage -60 — V VGS = 0V, ID = -250µAVGS(th) Gate Threshold Voltage -1.0 -2.0 VGS = VDS, ID = -250µAIGSS Gate-to-Source Leakage Forward — -100 nA VGS = -10VIGSS Gate-to-Source Leakage Reverse — 100 VGS = 10VIDSS Zero Gate Voltage Drain Current — -1.0 µA VDS= -48V, VGS= 0VRDS(on) Static Drain-to-Source

On-State Resistance (TO-39) — 1.40 Ω VGS = -4.5V, ID = -0.41ARDS(on) Static Drain-to-Source On-state

VSD Diode Forward Voltage — -5.0 V VGS = 0V, ID = -0.65A

Resistance (LCC-6) — 1.60 Ω VGS = -4.5V, ID = -0.41A

1. Part numbers IRHLUC7670Z4, IRHLUC7630Z4

Table 2. Typical Single Event Effect Safe Operating AreaLET Energy Range VDS (V)

(MeV/(mg/cm2)) (MeV) (µm) @VGS= @VGS= @VGS= @VGS= @VGS= @VGS=

0V 2V 4V 5V 6V 7V

38 ± 5% 300 ± 7.5% 38 ± 7.5% -60 -60 -60 -60 -60 -50

62 ± 5% 355 ± 7.5% 33 ± 7.5% -60 -60 -60 -60 -60 -

85 ± 5% 380 ± 7.5% 29 ± 7.5% -60 -60 -60 -60 - -

-70-60-50-40-30-20-10

00 1 2 3 4 5 6 7

Bias VGS (V)

Bia

s V

DS

(V

)

LET=38 ± 5%

LET=62 ± 5%

LET=85 ± 5%

IRHLUC7670Z4, 2N7632UC Pre-Irradiation

6 www.irf.com

N-Channel Die 1

0.1 1 10 100

VDS, Drain-to-Source Voltage (V)

0.1

1

10

I D,

Dra

in-t

o-S

ourc

e C

urre

nt (

A)

60µs PULSE WIDTH Tj = 25°C

VGSTOP 10V 7.0V 5.0V 4.0V 3.5V 3.0V 2.75VBOTTOM 2.5V

2.5V

0.1 1 10 100

VDS , Drain-to-Source Voltage (V)

0.1

1

10

I D,

Dra

in-t

o-S

ourc

e C

urre

nt (

A)

60µs PULSE WIDTH Tj = 150°C

2.5V

VGSTOP 10V 7.0V 5.0V 4.0V 3.5V 3.0V 2.75VBOTTOM 2.5V

2 2.5 3 3.5 4 4.5 5

VGS, Gate-to-Source Voltage (V)

0.1

1

10

I D, D

rain

-to-

Sou

rce

Cur

rent

(A

)

VDS = 25V

60µs PULSE WIDTH

TJ = 150°C

TJ = 25°C

-60 -40 -20 0 20 40 60 80 100 120 140 160

TJ , Junction Temperature (°C)

0.0

0.5

1.0

1.5

2.0

RD

S(o

n) ,

Dra

in-t

o-S

ourc

e O

n R

esis

tanc

e

(

Nor

mal

ized

)

VGS = 4.5V

ID = 0.89A

www.irf.com 7

Pre-Irradiation IRHLUC7670Z4, 2N7632UC

Fig 5. Typical On-Resistance VsGate Voltage

Fig 6. Typical On-Resistance VsDrain Current

Fig 7. Typical Drain-to-SourceBreakdown Voltage Vs Temperature

Fig 8. Typical Threshold Voltage VsTemperature

0 0.5 1.0 1.5 2.0 2.5 3.0

ID, Drain Current (A)

0.4

0.6

0.8

1.0

1.2

1.4

1.6

RD

S(o

n),

Dra

in-t

o -S

ourc

e O

n R

esis

tanc

e (Ω

)

TJ = 25°C

TJ = 150°C

Vgs = 4.5V

-60 -40 -20 0 20 40 60 80 100 120 140 160

TJ , Temperature ( °C )

55

65

75

V(B

R)D

SS

, Dra

in-t

o-S

ourc

e B

reak

dow

n V

olta

ge (

V)

ID = 1.0mA

-60 -40 -20 0 20 40 60 80 100 120 140 160

TJ , Temperature ( °C )

0.0

0.5

1.0

1.5

2.0

2.5

3.0

VG

S(t

h) G

ate

thre

shol

d V

olta

ge (

V)

ID = 50µA

ID = 250µA

ID = 1.0mA

ID = 150mA

2 3 4 5 6 7 8 9 10 11 12

VGS, Gate -to -Source Voltage (V)

0

0.5

1.0

1.5

2.0

2.5

3.0

RD

S(o

n),

Dra

in-t

o -S

ourc

e O

n R

esis

tanc

e (

Ω)

ID = 0.89A

TJ = 25°C

TJ = 150°C

N-Channel Die 1

IRHLUC7670Z4, 2N7632UC Pre-Irradiation

8 www.irf.com

!

!

N-Channel Die 1

1 10 100

VDS, Drain-to-Source Voltage (V)

0

40

80

120

160

200

240

280

C, C

apac

itanc

e (p

F)

VGS = 0V, f = 1 MHzCiss = Cgs + Cgd, C ds SHORTED

Crss = Cgd Coss = Cds + Cgd

Coss

Crss

Ciss

0 0.5 1.0 1.5 2.0 2.5

VSD , Source-to-Drain Voltage (V)

0.01

0.1

1

10

I SD

, R

ever

se D

rain

Cur

rent

(A

)

VGS = 0V

TJ = 150°C

TJ = 25°C

Fig 11. Typical Source-to-Drain DiodeForward Voltage

0 0.5 1 1.5 2 2.5 3 3.5 4

QG, Total Gate Charge (nC)

0

2

4

6

8

10

12

VG

S, G

ate-

to-S

ourc

e V

olta

ge (

V)

VDS = 48V

VDS = 30V

VDS = 12V

ID = 0.89A

FOR TEST CIRCUIT SEE FIGURE 17

25 50 75 100 125 150

TC , Case Temperature (°C)

0

0.2

0.4

0.6

0.8

1.0

I D,

Dra

in C

urre

nt (

A)

www.irf.com 9

Pre-Irradiation IRHLUC7670Z4, 2N7632UC

"# $ %& '(

N-Channel Die 1

1E-005 0.0001 0.001 0.01 0.1 1 10 100 1000

t1 , Rectangular Pulse Duration (sec)

0.01

0.1

1

10

100

1000

The

rmal

Res

pons

e (

Z th

JA )

0.20

0.10

D = 0.50

0.020.01

0.05 SINGLE PULSE( THERMAL RESPONSE )

Notes:1. Duty Factor D = t1/t22. Peak Tj = P dm x Zthjc + Tc

! ' '# "

P

t

t

DM

1

2

0.1 1 10 100

VDS , Drain-to-Source Voltage (V)

0.01

0.1

1

10

I D,

Dra

in-t

o-S

ourc

e C

urre

nt (

A)

Tc = 25°CTj = 150°CSingle Pulse

1ms

10ms

OPERATION IN THIS AREA LIMITED BY RDS(on)

100µs

DC

25 50 75 100 125 150

Starting TJ , Junction Temperature (°C)

0

8

16

24

32

40

48

EA

S ,

Sin

gle

Pul

se A

vala

nche

Ene

rgy

(mJ) ID

TOP 0.40A 0.56ABOTTOM 0.89A

IRHLUC7670Z4, 2N7632UC Pre-Irradiation

10 www.irf.com

N-Channel Die 1

Fig 16a. Unclamped Inductive Test Circuit

RG

IAS

0.01Ωtp

D.U.T

LVDS

+- VDD

DRIVER

A

15V

20V

VGS

Fig 16b. Unclamped Inductive Waveforms

tp

V(BR)DSS

IAS

QG

QGS QGD

VG

Charge

D.U.T.VDS

IDIG

3mA

VGS

.3µF

50KΩ

.2µF12V

Current RegulatorSame Type as D.U.T.

Current Sampling Resistors

+

-

)*

Fig 17b. Gate Charge Test CircuitFig 17a. Basic Gate Charge Waveform

VDS

90%

10%VGS

td(on) tr td(off) tf

Fig 18a. Switching Time Test Circuit Fig 18b. Switching Time Waveforms

≤ 1 ≤ 0.1 %

++-

www.irf.com 11

Pre-Irradiation IRHLUC7670Z4, 2N7632UC

P-Channel Die 2

0.1 1 10 100

-VDS , Drain-to-Source Voltage (V)

0.01

0.1

1

10

-ID

, D

rain

-to-

Sou

rce

Cur

rent

(A

)

60µs PULSE WIDTH Tj = 25°C

VGSTOP -10V -5.0V -4.0V -3.5V -3.0V -2.5V -2.25VBOTTOM -2..0V

-2.0V

0.1 1 10 100

-VDS , Drain-to-Source Voltage (V)

0.1

1

10

-ID

, D

rain

-to-

Sou

rce

Cur

rent

(A

)60µs PULSE WIDTH Tj = 150°C

VGSTOP -10V -5.0V -4.0V -3.5V -3.0V -2.5V -2.25VBOTTOM -2..0V

-2.0V

2 2.5 3 3.5 4 4.5

-VGS, Gate-to-Source Voltage (V)

0.1

1

10

-ID

, Dra

in-t

o-S

ourc

e C

urre

nt (

Α)

VDS = -25V

60µs PULSE WIDTH

TJ = 150°C

TJ = 25°C

-60 -40 -20 0 20 40 60 80 100 120 140 160

TJ , Junction Temperature (°C)

0.5

1.0

1.5

2.0

RD

S(o

n) ,

Dra

in-t

o-S

ourc

e O

n R

esis

tanc

e

(

Nor

mal

ized

)

VGS = -4.5V

ID = -0.65A

IRHLUC7670Z4, 2N7632UC Pre-Irradiation

12 www.irf.com

-60 -40 -20 0 20 40 60 80 100 120 140 160

TJ , Temperature ( °C )

0.0

0.5

1.0

1.5

2.0

2.5

-VG

S(t

h) G

ate

thre

shol

d V

olta

ge (

V)

ID = -50µA

ID = -250µA

ID = -1.0mA

ID = -150mA

P-Channel Die 2

Fig 23. Typical On-Resistance VsGate Voltage

Fig 24. Typical On-Resistance VsDrain Current

Fig 25. Typical Drain-to-SourceBreakdown Voltage Vs Temperature

Fig 26. Typical Threshold Voltage VsTemperature

-60 -40 -20 0 20 40 60 80 100 120 140 160

TJ , Temperature ( °C )

50

60

70

80

-V(B

R)D

SS

, Dra

in-t

o-S

ourc

e B

reak

dow

n V

olta

ge (

V)

ID = -1.0mA

0 0.5 1.0 1.5 2.0 2.5 3.0

-ID, Drain Current (A)

0.8

1.2

1.6

2.0

2.4

2.8

3.2

RD

S(o

n),

Dra

in-t

o -S

ourc

e O

n R

esis

tanc

e (Ω

)TJ = 25°C

TJ = 150°C

Vgs = -4.5V

2 3 4 5 6 7 8 9 10 11 12

-VGS, Gate -to -Source Voltage (V)

0

0.5

1

1.5

2

2.5

3

3.5

4

RD

S(o

n),

Dra

in-t

o -S

ourc

e O

n R

esis

tanc

e (

Ω)

ID = -0.65A

TJ = 25°C

TJ = 150°C

www.irf.com 13

Pre-Irradiation IRHLUC7670Z4, 2N7632UC

!

!

P-ChannelDie 2

1 10 100

-VDS, Drain-to-Source Voltage (V)

0

40

80

120

160

200

240

C, C

apac

itanc

e (p

F)

VGS = 0V, f = 1 MHzCiss = Cgs + Cgd, C ds SHORTED

Crss = Cgd Coss = Cds + Cgd

Coss

Crss

Ciss

! ,-

25 50 75 100 125 150

TC , Case Temperature (°C)

0

0.1

0.2

0.3

0.4

0.5

0.6

0.7

-ID

, D

rain

Cur

rent

(A

)

0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5.0

-VSD , Source-to-Drain Voltage (V)

0.01

0.1

1

10

-IS

D,

Rev

erse

Dra

in C

urre

nt (

A)

VGS = 0V

TJ = 150°C

TJ = 25°C

0 0.5 1 1.5 2 2.5 3 3.5 4 4.5

QG, Total Gate Charge (nC)

0

2

4

6

8

10

12

-VG

S, G

ate-

to-S

ourc

e V

olta

ge (

V)

VDS= -48V

VDS= -30V

VDS= -12V

ID = -0.65A

FOR TEST CIRCUIT SEE FIGURE 35

IRHLUC7670Z4, 2N7632UC Pre-Irradiation

14 www.irf.com

'# "

"# $ %& '(

P-Channel Die 2

! '

1E-005 0.0001 0.001 0.01 0.1 1 10 100 1000

t1 , Rectangular Pulse Duration (sec)

0.01

0.1

1

10

100

1000

The

rmal

Res

pons

e (

Z th

JA )

0.20

0.10

D = 0.50

0.020.01

0.05 SINGLE PULSE( THERMAL RESPONSE )

Notes:1. Duty Factor D = t1/t22. Peak Tj = P dm x Zthjc + Tc

25 50 75 100 125 150

Starting TJ , Junction Temperature (°C)

0

10

20

30

40

50

60

70

80

EA

S ,

Sin

gle

Pul

se A

vala

nche

Ene

rgy

(mJ) ID

TOP -0.29A -0.41ABOTTOM -0.65A

P

t

t

DM

1

2

1 10 100

-VDS , Drain-to-Source Voltage (V)

0.01

0.1

1

10

-ID

, D

rain

-to-

Sou

rce

Cur

rent

(A

)

Tc = 25°CTj = 150°CSingle Pulse

1ms

10ms

OPERATION IN THIS AREA LIMITED BY RDS(on)

DC

www.irf.com 15

Pre-Irradiation IRHLUC7670Z4, 2N7632UC

P-Channel Die 2

+ $ #.#+ $ #

tp

V(BR)DSS

IAS

RG

IAS

0.01Ωtp

D.U.T

LVDS

VDD

DRIVERA

15V

-20V

VGS

/ .#

D.U.T.VDS

IDIG

-3mA

VGS

.3µF

50KΩ

.2µF12V

Current RegulatorSame Type as D.U.T.

Current Sampling Resistors

+

-

QG

QGS QGD

VG

Charge

)*

VDS

90%

10%

VGS

td(on) tr td(off) tf

≤ 1

≤ 0.1 %

+-

VGS

!- !- .#

IRHLUC7670Z4, 2N7632UC Pre-Irradiation

16 www.irf.com

Total Dose Irradiation with VGS Bias.10 volt VGS applied and VDS = 0 duringirradiation per MIL-STD-750, method 1019, condition A

Total Dose Irradiation with VDS Bias.48 volt VDS applied and VGS = 0 during

irradiation per MlL-STD-750, method 1019, condition AVDD = -25V, starting TJ = 25°C, L= 161mH,

Peak IL = -0.65A, VGS = -10V

ISD ≤ -0.65A, di/dt ≤ -150A/µs,VDD ≤ -60V, TJ ≤ 150°C

Repetitive Rating; Pulse width limited bymaximum junction temperature.

VDD = 25V, starting TJ = 25°C, L= 50.4mH,Peak IL = 0.89A, VGS = 10V

ISD ≤ 0.89A, di/dt ≤ 200A/µs,VDD ≤ 60V, TJ ≤ 150°C

Pulse width ≤ 300 µs; Duty Cycle ≤ 2%

Case Outline and Dimensions — LCC-6

Footnotes:

IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105IR LEOMINSTER : 205 Crawford St., Leominster, Massachusetts 01453, USA Tel: (978) 534-5776

TAC Fax: (310) 252-7903Visit us at www.irf.com for sales contact information.

Data and specifications subject to change without notice. 10/2010

±

±

3. CONTROLLING DIMENSION: INCH.2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS [INCHES].1. OUTLINE CONFORMS TO MIL-PRF-19500/255L

NOTES: DIE 1 ( N Ch ) DIE 2 ( P Ch )

PIN NAME PIN # PIN NAME PIN #DRAIN - 1 DRAIN - 4GATE - 2 GATE - 5SOURCE - 6 SOURCE - 3

0.170

0.245 0.080MAX.

3

5

4

2

6

1PIN 1 PIN 1

0.025

0.0900.065± 0.008

0.1000.050

± 0.010

± 0.010