IP Port TDR Seminar: Four Device ComparisonIP Port Test & Model Objectives Ł TDR (S11) measured to...

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IP Port TDR Seminar: Four Device Comparison Jim Mayrand, TDA Consultant Complete DVT Solutions 1734 Divisadero Street San Francisco, CA 94115-3050 tel 415-738-8607 fax 415-921-1873 [email protected] www.tdasystems.com

Transcript of IP Port TDR Seminar: Four Device ComparisonIP Port Test & Model Objectives Ł TDR (S11) measured to...

Page 1: IP Port TDR Seminar: Four Device ComparisonIP Port Test & Model Objectives Ł TDR (S11) measured to IC input Transceivers Ł Partition TDR into exact component models (e.g. via) Ł

IP P

ort T

DR

Sem

inar

: Fo

ur D

evic

e C

ompa

rison

Jim

May

rand

, TD

A C

onsu

ltant

Com

plet

e D

VT

Sol

utio

ns17

34 D

ivis

ader

o St

reet

San

Fra

ncis

co, C

A 9

4115

-305

0te

l415

-738

-860

7fa

x 41

5-92

1-18

73

may

rand

@ea

rthlin

k.ne

tw

ww

.tdas

yste

ms.

com

Page 2: IP Port TDR Seminar: Four Device ComparisonIP Port Test & Model Objectives Ł TDR (S11) measured to IC input Transceivers Ł Partition TDR into exact component models (e.g. via) Ł

IP P

ort T

est &

Mod

el O

bjec

tives

�TD

R (S

11) m

easu

red

to I

C in

put T

rans

ceiv

ers

�P

artit

ion

TDR

into

exa

ct c

ompo

nent

mod

els

(e.g

. via

)�

Opt

imiz

e H

spic

e si

mul

atio

n to

mat

ch S

11 m

easu

rem

ent

�S

imul

ate

TDT/

S21

for 1

ns e

ye d

iagr

am�

Diff

eren

tiate

IC p

erfo

rman

ce b

y E

ye &

S P

aram

eter

s�

Diff

eren

tiate

IC p

erfo

rman

ce b

y S

11/S

21 c

ross

over

�U

se IC

onne

ct A

naly

sis

to c

onve

rt Ti

me

Dom

ain

Sim

ulat

ions

to Im

peda

nce,

S p

aram

eter

s an

d E

yes

�U

se A

naly

sis

to d

efin

e ne

twor

k S

11 P

ass/

Fail

test

Page 3: IP Port TDR Seminar: Four Device ComparisonIP Port Test & Model Objectives Ł TDR (S11) measured to IC input Transceivers Ł Partition TDR into exact component models (e.g. via) Ł

2 P

ort S

Par

amet

ers

From

1 P

ort T

DR

Tes

tW

ith a

cces

s to

inpu

t TD

R o

nly,

two

port

S p

aram

eter

s w

ere

extr

acte

d fr

om �

open

te

rmin

atio

n� a

nd �

bal

ance

term

inat

ion�

TD

R m

easu

rem

ents

. For

this

dev

ice

the

IC

was

act

ivel

y te

rmin

ated

(on

chip

and

dow

n st

ream

). T

he IC

cou

ldbe

sw

itche

d fr

om

a dc

ope

n to

a 9

0 oh

m d

iffer

entia

l (45

ohm

sin

gle

ende

d) te

rmin

atio

n. I

n th

e op

en

stat

e, th

e pa

th le

ngth

to th

e IC

term

inat

or w

as c

hara

cter

ized

. Th

en th

e de

vice

te

rmin

atio

ns w

ere

activ

ated

and

diff

eren

tial I

nser

tion

and

�tru

e� R

etur

n lo

ss w

as

mea

sure

d. S

par

amet

ers

wer

e ex

trac

ted

from

TD

R�s

to c

onfir

m e

xact

acc

urac

y.

ICon

nect

sof

twar

e ca

n ex

trac

t S p

aram

eter

s fr

om O

pen

TDR

onl

y.

Firs

t IC

onne

ct s

oftw

are

�un-

peel

s� m

ultip

le T

DR

refle

ctio

ns c

reat

ing

a �t

rue�

im

peda

nce

prof

ile ri

ght i

nto

the

IC in

put p

in.

The

impe

danc

e m

easu

rem

ent w

ith

activ

e IP

term

inat

or w

as tr

ansf

orm

ed to

a �

true

� S

11, r

etur

n lo

ss m

easu

rem

ent.

O

pen

term

inat

ion

impe

danc

e pr

ofile

was

use

d to

cha

ract

eriz

e fo

r ski

n an

d di

elec

tric

lo

ss b

y ex

amin

ing

riset

ime

degr

adat

ion

betw

een

inpu

t an

d op

en-r

efle

ctio

n ed

ges.

U

sing

ICon

nect

a d

etai

led

spic

e m

odel

was

cre

ated

by

SI e

ngin

eer.

This

was

all

done

usi

ng IC

onne

ct &

Hsp

ice

repl

acin

g op

en IC

term

inat

ion

with

ac

tive

term

inat

ion

sub-

circ

uit.

2nd

Hsp

ice

sim

ulat

ion

conf

irmed

that

ICon

nect

had

ac

cura

tely

�ca

ptur

ed�

the

inte

rcon

nect

mod

el w

hich

was

then

use

d to

mea

sure

bo

th In

sert

ion

(S21

), re

turn

(S11

) los

s; p

lus

hund

reds

of p

aram

eter

s su

ch IC

inpu

t ca

paci

tanc

e to

a fF

acc

urac

y.

Page 4: IP Port TDR Seminar: Four Device ComparisonIP Port Test & Model Objectives Ł TDR (S11) measured to IC input Transceivers Ł Partition TDR into exact component models (e.g. via) Ł

TDS

8000

Boa

rdTe

stbo

ard

tdro

_ref

tdro

_US

B_R

ef

sock

et

IC

tdro

_noI

Ctd

ro_I

Con

& td

ro_I

Cof

f

US

B O

dd M

easu

rem

ent L

ocat

ions

TDR

Mea

sure

men

ts

US

B C

able

Page 5: IP Port TDR Seminar: Four Device ComparisonIP Port Test & Model Objectives Ł TDR (S11) measured to IC input Transceivers Ł Partition TDR into exact component models (e.g. via) Ł

Pac

kage

/IC1

Acc

eptib

leR

iset

ime

H

eigh

t=40

0mv,

Bit=

2083

ps

S11

(red

) S21

(blu

e)

But

To

Loss

y w

/Sm

all

reso

nanc

e

Hig

h In

serti

on

Page 6: IP Port TDR Seminar: Four Device ComparisonIP Port Test & Model Objectives Ł TDR (S11) measured to IC input Transceivers Ł Partition TDR into exact component models (e.g. via) Ł

Eve

n (c

omm

on) &

Odd

(diff

eren

tial)

From

Old

TD

R D

ata

Def

ined

par

titio

ns�

Boa

rd:

�M

odul

e Zc

omm

on+/

-30%

mar

gina

l�

Due

to C

onne

ctor

Hig

h Z

�D

ue to

Via

Z D

ip�

Deg

rade

s:�

Diff

eren

tial Z

dd�

Ret

urn

Loss

(SD

11)

�Te

stbo

ard

�B

ond

Wire

Z o

k�

Chi

p C

arrie

r Z o

k�

IC In

put p

ad C

apac

itanc

e no

t ok

�Th

e en

d at

TD

R (E

ven=

Odd

)

�IC

or P

CB

fix?

?�

Dec

reas

e IC

inpu

t Cin

by h

alf

�O

r fix

Hig

h Z

disc

ontin

uitie

s�

Or f

ix b

oth

(not

nee

ded

for -

10 d

B S

11)

Eve

n

Odd

Car

rier

Ope

n ba

ll

Voi

d

Car

rier

Bon

d P

ad

Page 7: IP Port TDR Seminar: Four Device ComparisonIP Port Test & Model Objectives Ł TDR (S11) measured to IC input Transceivers Ł Partition TDR into exact component models (e.g. via) Ł

Det

erm

ine

pad/

inpu

t cap

acita

nce

From

30p

s TD

R W

avef

orm

s

�Pa

d In

put C

apac

itanc

ew

hich

has

low

est D

ipIC

onne

ct m

easu

res

it

�Se

e se

vera

l effe

cts?

, �

Sip

ad�

IC C

hip

carri

er�

bond

wire

�30

ps T

DR

Sm

ears

Dat

a? N

o�

Enou

gh S

epar

atio

n? Y

es�

Cin

Dom

inat

es

Page 8: IP Port TDR Seminar: Four Device ComparisonIP Port Test & Model Objectives Ł TDR (S11) measured to IC input Transceivers Ł Partition TDR into exact component models (e.g. via) Ł

IC V

ersu

s B

oard

S11

Plo

ts�

Gre

en re

turn

loss

exc

eeds

-5d

B a

bove

600

MH

z I

f IC

im

peda

nce

varia

tion

wer

e lim

ited

to 1

0% w

ith b

oard

un

chan

ged

then

the

retu

rn

loss

impr

oves

(blu

e) b

y 4

dB

caus

ing

retu

rn L

oss

to p

ass.

�If

boar

d w

as a

solim

ited

to a

10

% v

aria

tion,

then

Pur

ple

S11

>10

dB

at 1

GH

z!!!

��IC

� fix

reco

men

ded

Boa

rd &

IC fi

xed

Orig

inal

G

reen

IC F

ixed

Page 9: IP Port TDR Seminar: Four Device ComparisonIP Port Test & Model Objectives Ł TDR (S11) measured to IC input Transceivers Ł Partition TDR into exact component models (e.g. via) Ł

JDE

C N

otes

On

Gig

abit

S11

Page 10: IP Port TDR Seminar: Four Device ComparisonIP Port Test & Model Objectives Ł TDR (S11) measured to IC input Transceivers Ł Partition TDR into exact component models (e.g. via) Ł

US

B C

AB

LE, P

CB

IP IC

INP

UT

Diff

-TD

R W

AVE

FOR

M

Page 11: IP Port TDR Seminar: Four Device ComparisonIP Port Test & Model Objectives Ł TDR (S11) measured to IC input Transceivers Ł Partition TDR into exact component models (e.g. via) Ł

Pac

kage

/IC2

S11

Res

onan

ce

Hei

ght=

400m

v, B

it=20

83ps

Big

Res

onan

ce

Page 12: IP Port TDR Seminar: Four Device ComparisonIP Port Test & Model Objectives Ł TDR (S11) measured to IC input Transceivers Ł Partition TDR into exact component models (e.g. via) Ł

Pac

kage

/IC3

Mod

el W

avef

orm

s H

eigh

t=40

0mv,

Bit=

2083

ps

To L

ossy

Page 13: IP Port TDR Seminar: Four Device ComparisonIP Port Test & Model Objectives Ł TDR (S11) measured to IC input Transceivers Ł Partition TDR into exact component models (e.g. via) Ł

Pac

kage

/IC4

Mod

el W

avef

orm

s H

eigh

t=40

0mv,

Bit=

2083

ps

Page 14: IP Port TDR Seminar: Four Device ComparisonIP Port Test & Model Objectives Ł TDR (S11) measured to IC input Transceivers Ł Partition TDR into exact component models (e.g. via) Ł

US

B IP

Dev

ice

Eye

Com

paris

on

Hei

ght=

400m

v, B

it=20

83ps

Dev

2

Dev

3D

ev 4

Dev

1

Bes

t

Res

onan

ceLo

ss &

ring

Hig

h Lo

ss