Introduction of Si Microwave Devices · Introduction of Si/SiGe Microwave Transistors October,...

Introduction of Introduction of Si/SiGe Microwave TransistorsSi/SiGe Microwave Transistors

October, 2009Microwave Device Sales Engineering

Compound Semiconductor Devices Division,Discrete and IC Operations Unit,

NEC Electronics Corporation

GET-SB-1821

2

＊fmax：＠1V, NF:@2GHz,2v,3mA2008200220001998

NF(dB)

100

50

1.0

1.5

fmax(GHz)

150

0

200

250

300

350

0.5

ＳｉＧｅＳｉＧｅ：Ｃ

＝ Innovate a new ＳｉＧｅ(:C) technology＝

ＵＨＳ２ＵＨＳ２

ＵＨＳ４ＵＨＳ４

ＰｕｒｅＳｉ

ＵＨＳ０ＵＨＳ０ＳＡＴ３ＳＡＴ３ Lower NFLower NF

High SpeedHigh Speed1.0dB

0.8dB

0.6dB

0.43dB75G

80G

100G

201020062004

ＵＨＳ３ＵＨＳ３

UHS Process Road-Map

3

Process of Microwave Transistors= Self-align Structure Bipolar Technology =

Process Process TechnologyTechnology

UHS0UHS0

UHS2UHS2

UHS3UHS3

2SC5507 2SC5508 2SC5509

NESG2021M05 NESG220033 NESG2031M05 NESG220034 NESG2101M05 NESG240033 NESG250134,260234,270034 NESG240034

NESG210833

NF:[email protected] NF:[email protected]

UHS0HV UHS0HV

NF:0.9dB@2GNF:0.9dB@2G

UHS0 UHS0

UHS2UHS2

UHS2HVUHS2HVNF:0.8dB@2GNF:0.8dB@2G NF:[email protected]:[email protected]

NF:1.1dB@2GNF:1.1dB@2G

NESG2030M04

2SC5754 (P-1:26dBm)

UHS3UHS3

fTfT=60GHz=60GHz

fTfT=25GHz=25GHz

Noise Noise PerformancePerformance

High Breakdown Voltage version

BVceo: 5V(min.)

SiGeSiGe

SiGeSiGe

SiSi

NESG3031M05 NESG3031M14 NESG3032M14 NESG3033M14

UHS4UHS4

SiGe:CSiGe:C

UHS4UHS4

NESG4030M14

4

Transistors Package Line-upUNIT:mm

MM:33SMM:30 USMM:19

60%(2013)

30%(1608)

100%(2915)

3PIN

MM:39(2915)

SMM:18(2013)

TSMM:M04/M05(2013)

L2MM:M14(1208)

4PIN

SMM:M01/T(2013)

L2MM:M16/TD(1208)

L2MM:TU(2020)

6-8PIN

5

New Lineup Discrete Transistors SiGe HBT Family

New LineupNew Lineup Discrete TransistorsDiscrete Transistors SiGe HBT FamilySiGe HBT Family

6

New SiGeHBT productFEATURES- Suitable Application : UHF-Band Low Noise & Low Distortion Amplification.- Semiconductor Process : SiGeHBT

(Silicon Germanium Hetero junction Bipolar Transistor).- Package : 3Pin Power Mini Mold, 3Pin Mini mold- Include of ESD Protection

Characteristic

NESG210833- NF = 0.70dB TYP. Vce=5V,Ic=5mA,f=1GHz- Po(1dB) = 18.50dBm TYP. Vce=5V,Ic(set)=30mA,f=1GHz- OIP3 = 31dBm TYP. Vce=5V,Ic(set)=30mA,f=1GHz

NESG220033,NESG220034- NF = 0.75dB TYP. Vce=5V,Ic=10mA,f=1GHz- Po(1dB) = 21.5dBm TYP. Vce=5V,Ic(set)=40mA,f=1GHz- OIP3 = 35dBm TYP. Vce=5V,Ic(set)=40mA,f=1GHz

NESG240033,NESG240034- NF = 0.75dB TYP. Vce=5V,Ic=15mA,f=1GHz- Po(1dB) = 23.5dBm TYP. Vce=5V,Ic(set)=40mA,f=1GHz- OIP3 = 35.5dBm TYP. Vce=5V,Ic(set)=40mA,f=1GHz

New New

ProductProduct

7

New NESG HBT product

PACKAGE INFORMATION

NESG240034-A

Lead FreePackage code : 33,34

Index Num.Ic(Max) : 10=100mA, 20=200mA,40=400mA

Process Generation : 2=UHS2-HV, 3=UHS3

Mean of Products Name

CE

B

34 Package(3Pin Power Mini Mold)

BE

C

33 Package(3Pin Mini Mold)

New New

ProductProduct

8

SiGe:C Transistor

Concept- Advanced SiGe:C transistor

with New UHS4 process- Improvement of ESD Protection

Application- Low Noise Amplifier for 2.4GHz to 5.8GHz(Same Application for NESG3031M14)

- Mobile Communications etc.Features- Low Noise Figure : 1.1dB @f=5.8GHz- High Gain : 11.5dB @f=5.8GHz - hFE : 270 to 540

Package

NESG4030M14

4Pin L2MM“M14” Package

t=0.5mm

CE

EB

New New

ProductProduct

9

ESD Voltage Performance

（Ref）NESG3031M14

NFhFE

NESG4030M14NESG4030M14

TYP 1.1 [email protected]

(Ic=6mA)

TYP 15 [email protected]

(Ic=20mA)

Typ 300@Vce=2V

Ic=6mA(220-380)

MSGMM-Method HBM-Method

32V 74V

=Same RF performance and grater ESD Voltage from NESG3031M14=

NEWNEW

NESG3031M14 NESG3031M14 vsvs NESG4030M14NESG4030M14

600V74V（C to B）（C to B）

（C to B）（C to B）

Typ 400@Vce=2V

Ic=6mA(270-540)

TYP 1.1 [email protected]

(Ic=6mA)

TYP 15 [email protected]

(Ic=20mA)

10

SiGe Transistor

FLAT-LEAD 4-PIN THIN-TYPESUPER MINIMOLD “M05” Package

Concept- Advanced SiGe transistor

with New UHS3 process- 110GHz fT /fmax process technology

Application- Low Noise Amplifier for 2.4GHz to 5.8GHz

Mobile Communications etc.

Features- Low Noise Figure : 0.95dB @f=5.2GHz- High Gain : 10dB @f=5.2GHz - hFE : 220 to 380

Package

NESG3031M05 / M14


t =0.59mm

CE

EB

t=0.5mm

CE

EB

11

SiGe Transistor

Concept- Advanced SiGe transistor

with New UHS3 process- 110GHz fT /fmax process technology

Application- Low Noise Amplifier for GPS etc.

Features- Low Noise Figure : 0.6dB @f=2.0GHz- High Gain : 17.5dB @f=2.0GHz - hFE : 220 to 380

Package

NESG3032M14


t=0.5mm

CE

EB

12

PackagePackage

NESG3033M14

PerformanceNF= 0.6 dB TYP. @VCE=2V, IC=6mA, f=2GHz Ga= 17.5 dB TYP. @VCE=2V, IC=15mA, f=2GHz Pin LayoutPin Layout

Applications

-High ESD Performance-Same RF-Performance of NESG3032-L-band low noise and high gain

- Low Noise Amplifier for GPS etc.- LNA for 1 to 3GHz Applications

0.5

0.11

234 1

0.81.0

0.15

1.2

0.8

Concept■■

■■

■■

1: Collector 2:Emitter 3: Base 4: NC(Connected to 2 pin)

Pb-Free Product

SiGe Low Noise TransistorSiGe Low Noise Transistor

13

0.20 ∞521.00.5

0.2

0.5

1

5

2

-0 .2

-0.5

-1

-2

-5

ESD Voltage Performance

（Ref）NESG3032M14

NFhFE

S11 K factor

NESG3033M14NESG3033M140.6 dB@2GHz

(Ic=6mA)

20.5 dB@2GHz

(Ic=15mA)

Typ 300@Vce=2V

Ic=6mA

MSGMM-Method HBM-Method

1.5～1.8kV90～100V

32V 74V

=Same RF performance and grater ESD Voltage from NESG3032M14=

0.0

0.5

1.0

1.5

2.0

2.5

3.0

0.0 2.0 4.0 6.0 8.0 10.0

f(GHz)

K

0.20 ∞

521.00.5

0.2

0.5

1

5

2

-0 .2

-0.5

-1

-2

-5

@Vce=2V,Ice=7mA

S22

@Vce=2V,Ice=7mA

－：NESG3033M14－：NESG3032M14

NESG3032M14 / NESG3033M14NESG3032M14 / NESG3033M14

（E to B）（E to B）

600V74V（C to B）（C to B）

（C to B）（C to B）

14

Single Si / SiGe Tr Line-up fT Ic Vce 3Pin 3Pin 3Pin 3Pin 3Pin 4Pin 4Pin 4Pin 4Pin 4Pin 4PIN 6Pin 6Pin

(GHz) (mA) (V) Po-MM MM SMM USMM L2MM Po-MM MM SMM TSMM TSMM L2MM SMM L2MM(1608) (1005) (1208) (1208)

(SOT-89) (SOT-23) (SOT-323) (SOT-89) (SOT-143) (SOT-343) (SOT-363)34 33 30 19 M13 M02 39 18 M04 M05 M14 M01 M16

4.5×2.5 2.9×1.5 2.0×1.25 1.6×0.8 1.0×0.5 4.5×2.45 2.9×1.5 2.0×1.25 2.0×1.25 2.0×1.25 1.2×0.8 2.0×1.25 1.2×0.84.5×4.0 2.9×2.8 2.0×2.1 1.6×1.6 1.0×0.7 4.5×3.95 2.9×2.8 2.0×2.1 2.0×2.05 2.0×2.05 1.2×1.0 2.0×2.1 1.2×1.0

1.5 1.3 0.9 0.75 0.5 1.5 1.3 0.9 0.59 0.59 0.5 0.9 0.5Si 5.5 50 12 2SA1978

8.5 50 12 2SA19775.0 60 12 2SC4571 2SC50045.3 250 15 2SC4536 2SC53375.5 30 12 2SC4570 2SC50056.0 150 12 2SC4703 2SC53387.0 100 12 2SC3357 2SC3356 2SC4226 2SC5006 2SC5336 2SC4093 2SC50119.0 65 10 2SC3583 2SC4227 2SC5007 2SC4094 2SC5012

35 10 2SC3585 2SC4228 2SC5008 2SC4095 2SC5013100 5.5 2SC580130 6 2SC5010 2SC4957 2SC5015100 6 2SC5455 2SC5752 2SC5753

14.0 30 6 2SC536914.5 50 6 2SC5454 2SC5750 2SC5751

10 3 2SC5181 2SC518030 3 2SC5186 2SC5185

16.0 30 3150 6 2SC5288300 6 2SC5289

20.0 35 3 2SC578712 3.3 2SC5507 NE661M0535 3.3 2SC5606 2SC5508 2SC5704100 3.3 2SC5509500 5 2SC5754

SiGe 100 5 NESG210719400 5.5 * NESG240034 NESG240033500 9.2 NESG250134

12 200 5.5 * NESG220034 NESG22003314.0 600 9.2 NESG26023415.0 750 9.2 NESG27003415.5 100 5.5 * NESG21083318.0 40 5 NESG204619

4.3 NESG3031M05 NESG3031M144.3 NESG3032M144.3 * NESG3033M145 NESG2021M05 NESG2021M165 NESG2031M05 NESG2031M16

100 5 NESG2101M05 NESG2101M1636.0 35 2.3 2SC5761

SiGe:C 27.0 35 3 * NESG4030M14

Discrete and IC Operations Unit, Compound Semiconductor Devices Division

Package SizeHeight

Period :2009.10.01 to 2010.03.31ISSUED:2009.10.01

ProcessESD

Mold Size

10.0

10

25.0 35

12.0

15.5

18.0

25.0

Si & SiGe Bipolar Transistors FamilySi & SiGe Bipolar Transistors Family

15

Single Si / SiGe Tr Line-upProcess fT Ic Vce 3Pin 3Pin 3Pin 3Pin 3Pin 4Pin 4Pin 4Pin 4Pin 4Pin 4pin 6Pin 6Pin

(GHz) (mA) (V) Po-MM MM SMM USMM L2MM Po-MM MM SMM TSMM TSMM L2MM SMM L2MM(1608) (1005) (1208) (1208)

(SOT-89) (SOT-23) (SOT-323) (SOT-89) (SOT-143) (SOT-343) (SOT-363)34 33 30 19 M13 M02 39 18 M04 M05 M14 M01 M16

4.5×2.5 2.9×1.5 2.0×1.25 1.6×0.8 1.0×0.5 4.5×2.45 2.9×1.5 2.0×1.25 2.0×1.25 2.0×1.25 1.2×0.8 2.0×1.25 1.2×0.84.5×4.0 2.9×2.8 2.0×2.1 1.6×1.6 1.0×0.7 4.5×3.95 2.9×2.8 2.0×2.1 2.0×2.05 2.0×2.05 1.2×1.0 2.0×2.1 1.2×1.0

1.5 1.3 0.9 0.75 0.5 1.5 1.3 0.9 0.59 0.59 0.5 0.9 0.5Si 5.5 50 12 NE97833

8.5 50 12 NE977335.0 60 12 NE58230 NE582195.3 250 15 NE46134 NE461M025.5 30 12 NE58130 NE581196.0 150 12 NE46234 NE462M027.0 100 12 NE85634 NE85633 NE85630 NE85619 NE856M02 NE85639E NE856189.0 65 10 NE68133 NE68130 NE68119 NE68139E NE68118

35 10 NE68033 NE68030 NE68019 NE68039E NE68018100 5.5 NE851M1330 6 NE68519 NE68539E NE68518

100 6 NE67839 NE67818 NE678M0414.0 30 6 NE696M0114.5 50 6 NE67739 NE67718 NE677M04

10 3 NE68619 NE6861830 3 NE68719 NE68718

16.0 30 3150 6 NE68939300 6 NE69039

20.0 35 3 NE894M1312 3.3 NE661M04 NE661M0535 3.3 NE66219 NE662M04 NE662M16

100 3.3 NE663M04500 5 NE664M04

SiGe 100 5 NESG210719400 5.5 * NESG240034 NESG240033500 9.2 NESG250134

12 200 5.5 * NESG220034 NESG22003314.0 600 9.2 NESG26023415.0 750 9.2 NESG27003415.5 100 5.5 * NESG21083318.0 40 5 NESG204619

4.3 NESG3031M05 NESG3031M144.3 NESG3032M144.3 * NESG3033M145 NESG2021M05 NESG2021M165 NESG2031M05 NESG2031M16

100 5 NESG2101M05 NESG2101M1636.0 35 2.3 NESG2030M04

SiGe:C 27.0 35 3 * NESG4030M14

Discrete and IC Operations Unit, Compound Semiconductor Devices Division

Package SizeHeight

Period :2009.10.01 to 2010.03.31ISSUED:2009.10.01

ESD

Mold Size

10.0

10

25.0 35

12.0

15.5

18.0

25.0

Si & SiGe Bipolar Transistors FamilySi & SiGe Bipolar Transistors Family

16

15

20

25

30

0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6

Vce=2V,Ic=5mAVce=2V,Ic=10mAVce=3V,Ic=3.5mAVce=3V,Ic=10mA

NE662M04(2SC5508)Si-BJT

NESG2031M05 SiGe-HBT

NE52418 InGaP-HBT

NE34018 (Discontinue)

NE38018(Discontinue)

Ass

ocia

ted

Gai

n G

a (d

B)

Minimum Noise Figure NFmin (dB)

Ga vs. NFmin.

µPC8215TU SiGe-MMIC

µPC8211TK SiGe-MMIC


uPG2311T5F GaAs MMIC

NE3509M04HJ-FET

NESG3032M14 SiGe-HBTNESG3033M14 SiGe-HBT

NE3508M04HJ-FET

uPC8230TU SiGe:C MMIC

uPC8231TK SiGe:C MMIC

uPC8232T5N SiGe:C MMIC

@f=1.5GHz band

LNA Devices Lin-up for GPS

17

10

15

20

25

0 0.2 0.4 0.6 0.8 1 1.2 1.4

Vce=2V,Ic=5mA

Vce=2V,Ic=10mA

NE662M04 (2SC5508)

Si-BJT

NESG2021M05SiGe-HBT


NE52418InGaP-HBT

Ass

ocia

ted

Gai

n G

a (d

B)

Minimum Noise Figure NFmin (dB)

NFmin. vs. Ga



Discrete

NE3505M04 (Non-promotion)

NESG3031M05/ M14 SiGe-HBT

uPG2310TK InGaP HBT Driver MMIC

NE3509M04 HJ-FET

NE3508M04 HJ-FET

NE3510M04 HJ-FET

NE334S01 (Discontinue)

LNA Devices Lin-up for 2.4GHz Application

18

5

10

15

20

0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6

Vce=2V,Ic=5mA

Vce=2V,Ic=10mA



NE52418 InGaP-HBT

Ass

ocia

te G

ain

Ga(

dB)

Noise Figure NF(dB)

Gain vs. Noise Figure

NE3503M04 HJ-FET

NE3210S01 HJ-FET

NE4210S01 HJ-FET

DiscreteNESG3031 SiGe-HBT

LNA Device Line-up for 5.8GHz Application

19

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