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Contents

Full text on our homepage at: http://www.pss-c.com

Papers presented at the

International Workshop on

Nitride Semiconductors 2006 (IWN 2006)Kyoto, Japan, 22-27 October 2006

Guest Editors: Katsuhiro Akimoto, Shigefusa Chichibu, and Takashi Suemasu

Preface 2204

Workshop Committees 2205

Sponsors 2208

Bulk/LEO/HVPE

Solution growth ofA1N single crystal using Cu solvent under atmospheric pressure nitrogenK. Kamei, Y. Shirai, T. Tanaka, N. Okada, A. Yauchi, and H. Amano 2211-2214

Thermal and electrical properties of high-quality freestanding GaN wafers with high carrier

concentration

Yuichi Oshima, Takehiro Yoshida, Takeshi Eri, Masatomo Shibata,

and Tomoyoshi Mishima 2215-2218

Investigations ofthe growth conditions for GaN-bulk crystals grown by the sublimation techniqueH.-J. Rost, D. Siche, R. Miiller, D. Gogova, T. Schulz, M. Albrecht, and R. Fornari 2219-2222

Initial growth stage in PVT growth ofA1N on SiC substrates: Influence of A1203

Paul Heimann, C. Pfeiffer, M. Bickennann, B. M. Epelbaum, S. Nagata, and A. Winnacker . . 2223-2226

LPE growth ofA1N single crystal using cold crucible under atmospheric nitrogen gas pressure

T. Tanaka, N. Yashiro, Y. Shirai, K. Kamei, and A. Yauchi 2227-2230

Self-separated freestanding GaN grown on patterned substrate by Hydride Vapor Phase Epitaxy

Chih-Ming Lai, Wen Yu Liu, Jenq-Dar Tsay, Po Chun Liu, Yih-Der Guo,

Hsin-Hsiung Huang, Yu Hsiang Chang, and Jul Chin Yeh 2231-2235

Platelets and needles: two habits ofpressure grown GaN crystalsM. Bockowski, I. Grzegory, B. Lucznik, G. Kamler, S. Krukowski, M. Wroblewski,

P. Kwiatkowski, K. Jasik, and S, Porowski 2236-2239

Characterization ofAlGaN/InGaN/AlGaN heterostructure with selective area growth ofTe-doped

AlGaN cladding layer grown by mixed-source HVPE

K. S. Jang, K. H. Kim, S. L. Hwang, H. S. Jeon, M. Yang, H. S. Ahn, S. W. Kim,

Y. Honda, M. Yamaguchi, N. Sawaki, S.H.Jang, S.M.Lee, and M. Koike 2240-2243

Growth of high-quality 1-inch diameter A1N single crystal by sublimation method

N. Mizuhara, M. Miyanaga, S. Fujiwara, H. Nakahata, and T. Kawase 2244-2247

Fully unstrained GaN on sacrificial A1N layers by nano-heteroepitaxy

K. Tonisch, V. Cimalla, F. Niebelschiitz, H. Romanus, M. Eickhoff, and O. Ambacher .... 2248-2251

High temperature growth ofA1N film by LP-HVPE

K. Tsujisawa, S. Kishino, Y. H.Liu, H. Miyake, K. Hiramatsu, T, Shibata, and M. Tanaka. . .2252-2255

Bending in HVPE grown GaN films: origin and reduction possibilities

T. Paskova, L. Becker, T. Bottcher, D. Hommel, P. P. Paskov, and B. Monemar 2256-2259

2194 Contents

Growth ofhighly resistive Ga-polar GaN by LP-MOVPE

SeijiMita, Ramon Collazo, Rafael Dalmau, and Zlatko Sitar 2260-2263

Study on the sublimation growth of GaN using different powder sources and investigation on the

sublimation behaviour ofGaN powder by means ofthermogravimetryB. Kallinger, E. Meissner, D. Seng, G. Sun, S. Hussy, J. Friedrich, and G. Mtiller 2264-2267

Free standing GaN layers with GaN nanorod buffer layerH.J. Lee, S.W.Lee, H.Goto,Hyo-Jong Lee, J. S. Ha, M.W.Cho, and T.Yao 2268-2271

Void assisted dislocation reduction in A1N and AlGaN byhigh temperature MOVPE

K. Balakrishnan, K. Iida, A. Bandoh, M.Iwaya, S. Kamiyama, H. Amano, and I. Akasaki . . .2272-2276

Optimization ofHVPE growth of freestanding c-plane GaN layers using (100) y-LiA102 substrates

E. Richter, Ch. Hennig, L. Wang, U. Zeimer, M. Weyers, and G. Trankle 2277-2280

Growth ofbulk aluminum nitride crystalsH. Helava, S. J. Davis, G. D. Huminic, M. G. Ramm, 0. V. Avdeev, I. S. Barash,T. Yu. Chemekova, E. N. Mokhov, S. S.Nagalyuk, A. D. Roenkov, A. S. Segal,Yu.A. Vodakov,andYu.N. Makarov 2281-2284

Novel growth and crystals

Nitride film growth morphology using remote plasma enhanced chemical vapor depositionM. Wintrebert-Fouquet, K. S. A. Butcher, P. P.-T. Chen, and R. Wuhrer 2285-2288

Molecular dynamics simulation ofthermal conductivity ofGaN/AIN quantum dot superlatticesTakahiro Kawamura, Yoshihiro Kangawa, and Koichi Kakimoto 2289-2292

First-principle study on crystal growth of Ga and N layers on GaN substrate

K. Doi, N. Maida, K. Kimura, and A. Tachibana 2293-2296

In situ gravimetric monitoring of decomposition rate on the surface of (0001) c-plane sapphirefor the high temperature growth ofA1N

K. Akiyama, T. Araki, H. Murakami, Y. Kumagai, and A. Koukitu 2297-2300

Novel HVPE technology to grow nanometer thick GaN, A1N, AlGaN layers and multi-layeredstructures

Alexander Usikov, Lisa Shapovalova, Oleg Kovalenkov, Vitali Sukhoveev, Anna Volkova,Vladimir Ivantsov, Vladimir Dmitriev, Fanyu Meng, Ranjan Datta, Subhash Mahajan,Eric Readinger, Gregory Garrett, Michael Wrahack, and Michael Reshchikov 2301-2305

Growth ofhexagonal GaN films on the nitridated p-Ga203 substrates using RF-MBE

S. Ohira, N.Suzuki, H. MinamLK. TakahashLT. Araki, and Y.Nanishi 2306-2309

Fabrication and characterization of transparent conductive Sn-doped p-Ga203 single crystalN. Suzuki, S. Ohira, M. Tanaka, T. Sugawara, K. Nakajima, and T. Shishido 2310-2313

Metal catalyst enhanced growth ofhigh qualityand density GaN dots on Si(l 11) by implant source

growth

Ryan Buckmaster, Takenari Goto, Takashi Hanada, Katsushi Fujii, Takashi Kato,and Takafumi Yao 2314-2317

MBE growth ofcubic AlJni-^N and ALGa^In^N lattice matched to GaN

D. J. As, M. Schnietz, J. Schfirmann, S. Potthast, J.W. Gerlach, J. Vogt, andK. Lischka.. . .

2318-2321

Effect ofsubstrate surface on GaN dot structure grown on Si(l 11) by droplet epitaxyHiroaki Otsubo, Toshiyuki Kondo, Yo Yamamoto, Takahiro Maruyama,

and Shigeya Naritsuka 2322-2325

GaAs/c-GaN/GaAs multi-layered structure fabricated by using RF-plasma source nitridation

techniqueY. Yamamoto, M. Mori, H. Otsubo, T. Maruyama, and S. Naritsuka 2326-2329

Contents 2195

Heterostructures and nanostructures

Band offset measurements ofthe pulsed-laser-deposition-grown Sc203 (11 l)/GaN (0001) hetero-

structure by X-ray photoelectron spectroscopy

Chang Liu, Eng Fong Chor, Leng Seow Tan, and Yufeng Dong 2330-2333

Subband structure and transport properties of two-dimensional electron gas in Al^Gaj _,N/GaN

heterostructures

Xiuxun Han, Yoshio Honda, Tetsuo Narita, Masahito Yamaguchi, and Nobuhiko Sawaki. . . 2334-2337

InGaN/GaN quantum-well nanocolumn crystals on pillared Si substrate with InN as interlayerF. R. Hu, K. Ochi, Y. Zhao, and K. Hane 2338-2341

Vibrational modes and strain in GaN/AIN quantum dot stacks: dependence on spacer thickness

J. Fresneda, A. Cros, J. M. Llorens, A. Garcia-Cristobal, A. Cantarero, B. Amstatt,

E. Bellet-Amalric, and B. Daudin 2342-2345

Synthesis of Ill-nitride microcrystals using metal-EDTA complexes

Y.H.Liu, S. Koide.H.Miyake,K. Hiramatsu, A. Nakamura, andN.Nambu 2346-2349

Evidence of quantum dot-like nano-objects in InGaN quantum wells provided by narrow

photoluminescence spectra from localized exciton

H. Gotoh, T. Akasaka, T. Tawara, Y. Kobayashi, T. Makimoto, and H. Nakano 2350-2353

XPS study ofsurface potential in AlGaN/GaN heterostructure with Cat-CVD SiN passivationN. Onojima,M. Higashiwaki, T.Matsui, T. Mimura, J. Suda, andT. Kimoto 2354-2357

Stimulated emission from free-standing GaN/Si micro-disk structures

H. W. Choi, K. N. Hui, P. T. Lai, P. Chen, X. H. Zhang, J. H. Teng, S. Tripathy,

and S.J. Chua 2358-2361

Lateral diffusion ofphotogenerated carriers in InGaN/GaN heterostructures observed

by PL measurements

C. Vierheilig, H. Braun, U. T. Schwarz, W. Wegscheider, E. Baur, U. StrauG,

andV.Harle 2362-2365

Growth and field emission of GaN nanowires grown by metal organic chemical vapour depositionY. Inoue, A. Tajima, S. Takeda, A. Ishida, H. Mimura, and S. Sakakibara 2366-2370

Formation process ofsharp-pointed structures on GaN nanorods during RF-MBE growthand their field emission characteristics

M, Terayama, S. Hasegawa, K. Uchida, M. Ishimaru, Y. Hirotsu, and H. Asahi 2371-2374

Depth distribution of strain in GaN/AlN/SiC heterostructures by DUV micro-Raman spectroscopy

T. Kitamura, S. Nakashima, T. Mitani, N. Nakamura, K. Furuta, and H. Okumura 2375-2378

Evaluation of strain in GaN/AIN quantum dots by means ofresonant Raman scattering: the effect

ofcapping

A. Cros, J. A. Budagosky, N. Garro, A. Cantarero, J. Coraux, H. Renevier, M. G. Proietti,

V. Favre-Nicolin, and B. Daudin 2379-2382

Dependence of In mole fraction in InGaN on GaN facets

K.Nakao,D.B. Li, Y.H.Liu, H. Miyake, and K. Hiramatsu 2383-2386

InAsN quantum dots grown on GaAs(OOl) substrates by MOVPE

S.Kuboya,Q.T.Thieu,F.Nakajirna,R. Katayama, andK. Onabe 2387-2390

Intersubband transitions in InGaAsN/AlGaAs quantum wells with a high confinement energy

Jean-Yves Duboz 2391-

2196 Contents

Characterization of electrical properties ofAlGaN/GaN heterostructures grown on vicinal substrates

by rf-MBE

X. Q. Shen, K. Furuta, N. Nakamura, and H. Okumura 2395-2398

Nonlinear piezoelectric properties of GaN quantum dots nucleated at the edge ofthreadingdislocations

Pawel Dhrzewski, Toby D. Young, Gregorz Jurczak, and Jacek A, Majewski 2399-2402

FE simulation of InGaN QD formation at the edge ofthreading dislocation in GaN

Pawel Dfuzewski, Amina Belkadi, Jun Chen, Pierre Ruterana, and Gerard Nouet 2403-2406

Two-step growth of InGaN quantum dots and application to light emitters

T. Yamaguchi, J. Dennemarck, C. Tessarek, K. Sebald, S. Gangopadhyay, J. Falta,J. Gutowski, S. Figge, and D. Hommel 2407-2410

Nitride-organic semiconductor hybrid heterostructures for optoelectronic devices

Hyunjin Kim, Cuong Dang, Yoon-Kyu Song, Qiang Zhang, William Patterson,

A. V. Nurmikko, K.-K. Kim, S.-Y. Song, and Jung Han 2411-2414

InN and InN-rich InGaN

Polarity control ofInN grown by MOVPE on sapphire (0001)W.J. Wang, K. Sugita, Y. Nagai, Y. Houchin, A. Hashimoto, and A. Yamamoto 2415-2418

A new system for growing thick InN layers by hydride vapor phase epitaxyJ. Kikuchi, Y. Nishizawa, H. Murakami, Y. Kumagai, and A. Koukitu 2419-2422

Characterisation of multiple carrier transport in indium nitride grown by molecular beam epitaxyTamara B. Fehlberg, Gilberto A. Umana-Membreno, Chad S. Gallinat, Gregor Koblmuller,Sarah Bernardis, Brett D. Nener, Giacinta Parish, and James S. Speck 2423-2427

Alloy composition fluctuation and band edge energy structure of In-rich IntGai_:cN layersinvestigated by systematic spectroscopy

Yoshihiro Ishitani, Masayuki Fujiwara, Takuro Shinada, Xinqiang Wang, Son-Bek Che,and Akihiko Yoshikawa 2428-2432

Incorporation ofself assembled In-rich InGaN nanostructure to achieve redshift in InGaN/GaN

heterostructures

C. B. Soh, H. Hartono, P. Chen, and S. J. Chua 2433-2436

Structural and optical characterization of high In content cubic InGaN on GaAs(OOl) substrates

by RF-MBE

Teruyuki Nakamura, Yuta Endo, Ryuji Katayama, Hiroyuki Yaguchi, and Kentaro Onabe. . .

2437-2440

Characterization of MOVPE InN films grown on 3c-SiC/Si(l 11) templatesM. S. Cho, N. Sawazaki, K. Sugita, A. Hashimoto, A. Yamamoto, and Y. Ito 2441-2444

Localized plasmons at pores and clusters within inhomogeneous indium nitride films

T. V. Shubina, A. Vasson, J. Leymarie, N. A. Gippius, V. N. Jmerik, B. Monemar,and S. V. Ivanov 2445-2448

InN clusters in In,Gai_vN quantumwells: analysis ofbond lengthsH. Lei, X. J. Jiang, J. Chen, I. Belabbas, P. Ruterana, and G. Nouet 2449-2452

Origins ofn-type residual carriers in RF-MOMBE grown InN layersKosuke Iwao, Akio Yamamoto, and Akihiro Hashimoto 2453-2456

Adduct formation ofCP2Mg with NH3 in MOVPE growth of Mg-doped InN

Y. Nagai, H. Niwa, A. Hashimoto, and A. Yamamoto 2457-2460

Contents 2197

Crystallographic deterioration ofMOVPE InN during the growth

K. Sugita, Y. Nagai, Y. Houchin, A. Hashimoto, and A. Yamamoto 2461-2464

Unusual photoluminescence properties ofvertically aligned InN nanorods grown by plasma-assistedmolecular-beam epitaxy

C.-H. Shen, H.-Y. Chen, H.-W. Lin, C.-Y. Wu, S. Gwo, A. A. Klochikhin,and V. Yu. Davydov 2465-2468

Comparison of structural perfection of InN layers and InN nanorods grown on the c- and r-planesofAl203

Z. Liliental-Weber, H. Lu, W. J. Schaff, O. Kryliouk, H. J. Park, J. Mangum,

and T. Anderson 2469-2473

Effects ofnon-stoichiometry and compensation on fundamental parameters ofheavily-doped InN

T. V. Shubina, M. M. Glazov, S. V. Ivanov, A. Vasson, J. Leymarie, B. Monemar, T. Araki,

H.Naoi,andY.Nanishi 2474-2477

Polarity dependence ofIn-rich InGaN ternary alloys grown by RF-MBET. Shinada, S. B. Che, T. Mizuno, Y. Ishitani, and A. Yoshikawa 2478-2481

AlN and AlGaN opticalproperties

AlGaN deep ultraviolet LEDs on bulk AlN substrates

Zaiyuan Ren, Q. Sun, S.-Y. Kwon, J. Han, K. Davitt, Y. K. Song, A. V. Nurmikko,

W. Liu, J. Smart, and L. Schowalter 2482-2485

Boron addition effects on aluminum nitride fabricated by radio-frequency plasma-assisted molecularbeam epitaxy

Masashi Yamashita, Masato Yoshiya, Yukari Ishikawa, Hitoshi Ohsato,

and Noriyoshi Shibata 2486-2489

Bright electron emission from Si-doped AlN thin films

A.Kishimoto,Y.Inou,T.Kita, and O. Wada 2490-2493

Structural and optical properties of Si-doped AlGaN/AIN multiple quantum wells grown by MOVPE

Da-Bing Li, Takuya Katsuno, Masakazu Aoki, Hideto Miyake, Kazumasa Hiramatsu,

and Tomohiko Shibata 2494-2497

Continuous order-disorder phase transition (2 x 2) —» (1 x 1) on the (0001)A1N surface

V. G. Mansurov, Yu. G. Galitsyn, A. Yu. Nikitin, E. A. Kolosovsky, K. S. Zhuravlev,

Z. Osvath, L. Dobos, Z. E. Horvath, and B. Pecz 2498-2501

Mg-doped high-quality ALGa^N (x = 0 - 1) grown by high-temperature metal-organic vapor

phase epitaxyM. Imura, N. Kato, N. Okada, K. Balakrishnan, M. Iwaya, S. Kamiyama, H. Amano,

I. Akasaki, T. Noro, T. Takagi, and A. Bandoh 2502-2505

The surface diffusion of Ga species on an AlGaN facet structure in low pressure MOVPE

Tetuso Narita, Yoshio Honda, Masahito Yamaguchi, and Nobuhiko Sawaki 2506-2509

Nonpolar and semipolar nitrides

Observations on surface morphologies and dislocations ofa-plane GaN grown by metal organicchemical vapor deposition

T. S. Ko, T. C. Wang, H. G. Chen, R. C. Gao, G. S. Huang, T. C. Lu, H. C. Kuo,

andS. C.Wang 2510-2514

Phonon dispersion in GaN/AIN non-polar quantum wells; confinement and anisotropyA. Cros andF. Pomer 2515-2518

2198 Contents

Material and optical properties of Trenched Epitaxial Lateral Overgrowth ofa-plane GaN

Te-Chung Wang, Tien-Chang Lu, Tsung-Shine Ko, Hao-Chung Kuo, Hou-Guang Chen,Min Yu, Chang-Cheng Chuo, Zheng-Hong Lee, and Sing-Chung Wang 2519-2523

Reduced structural defect densities in a-plane GaN layers on r-plane sapphire through buffer layerengineering

R. Armitage, H. Hirayama, andY. Kondo 2524-2527

Microstructure of a-plane AlN grown on r-plane sapphire and on patterned AlN templatesby metalorganic vapor phase epitaxy

N. Okada, M. Imura, T. Nagai, K. Balakrishnan, M. Iwaya, S. Kamiyama, H. Amano,I. Akasaki, H. Maruyama, T. Noro, T. Takagi, and A. Bandoh 2528-2531

Growth of thick a-plane GaN on r-plane sapphire by direct synthesis method

K. Nishino, A. Sakamoto, and S. Sakai 2532-2535

Nonpolar a- and m-plane bulk GaN sliced from boules: structural and optical characteristics

T. Paskova, R. Kroeger, D. Hommel, P. P. Paskov, B. Monemar, E. Preble, A. Hanser,N. M. Williams, and M. Tutor 2536-2539

Direct growth ofa-plane GaN on r-plane sapphire substrate by metalorganic vapor phase epitaxyMasahiro Araki, Katsuyuki Hoshino, and Kazuyuki Tadatomo 2540-2543

Cathodolummescence characterization of [1120]-oriented InGaN/GaN thin films grownon r-plane sapphire substrates by metalorganic vapor-phase epitaxy

K. Kusakabe, T. Furuzuki, and K. Ohkawa 2544-2547

Electrical and optical characterization ofM-plane GaN films grown on LiA102 substrates

C. Rivera, P. Misra, J. L. Pau, E. Mufioz, O. Brandt, H. T. Grahn, and K. H. Ploog 2548-2551

Reduction ofthreading dislocations in nonpolar 4H-A1N on 4H-SiC(l 120) grown

by molecular-beam epitaxy with slightly Al-rich conditions

M. Horita, J. Suda, and T. Kimoto 2552-2555

Microstructure of^4-plane InN grown on .R-plane sapphire by ECR-MBES. Watanabe, Y. Kumagai, A. Tsuyuguchi, H. Na, H. Naoi, T. Araki, andY. Nanishi 2556-2559

Growth ofA-plane (1120) In-rich InGaN on if-plane (1022) sapphire by RF-MBE

M.Noda, Y. Kumagai, S. Takado, D. Muto, H.Na,H. Naoi, T. Araki, andY. Nanishi 2560-2563

Defect structure of a-plane GaN grown by hydride andmetal-organic vapor phase epitaxyon r-plane sapphire

R. KrOger, T, Paskova, B. Monemar, S. Figge, D. Hommel, andA. Rosenauer 2564-2567

Defects, structural properties and doping

Evaluation of dislocation-related defects in GaN using deep-level transient spectroscopyYutaka Tokuda, Youichi Matuoka, Kazuhiro Yoshida, Hiroyuki Ueda, Osamu Ishiguro,

Narimasa Soejima, and Tetsu Kachi 2568-2571

Annihilation ofthreading dislocations in strain relaxed nano-porous GaN template for high quality

GaN growthH. Hartono.C. B, Son, S.J. Chua, and E. A. Fitzgerald 2572-2575

Practical issues in carrier-contrast imaging ofGaN structures

J. Sumner, R. A. Oliver, M. J. Kappers, and C. J. Humphreys 2576-2580

Photo-enhanced reactivation ofSi donors deactivated byplasma-induced defects in n-type GaN

Seiji Nakamura, Yuki Ikadai, Masayuki Suda, Michihiko Suhara, and Tsugunori Okumura.. .

2581-2584

Contents 2199

Leak current in high resistive GaN buffer layer and its light responsiveness

T. Tanaka, Y. Moriya, M. Sahara, T. Yukimoto, H. Kamogawa, Y. Otoki, and T. Mishima.. .

2585-2588

Effects of proton irradiation on electrical and optical properties ofn-InN

V. V. Emtsev, V. Yu. Davydov, A. A. Klochikhin, A. V. Sakharov, A. N. Smirnov,

V. V. Kozlovskii, C.-L. Wu, C.-H. Shen, and S. Gwo 2589-2592

Ionization energy ofGaN point defectsA. Bere, I. Belabbas, G. Nouet, P. Ruterana, J. Chen, G. Segda, and J. Koulidiati 2593-2596

Impact ofpolarity control and related defects on the electrical properties of GaN grown by MOVPE

RCollazo, S.Mita,R.Dalmau,andZ. Sitar 2597-2600

Two-electron transition spectroscopy of shallow donors in bulk GaN

P. P. Paskov, B.Monemar, A. Toropov, J. P. Bergman, and A. Usui 2601-2604

Photoluminescence excitation spectroscopy of Er3* ions in cubic GaN: Er

V. Glukhanyuk, H. Przybylinska, and A. Kozanecki 2605-2608

Processing and contacts

Defect-selective etching ofaluminum nitride single crystalsM. Bickermann, S. Schmidt, B. M, Epelbaum, P. Heimann, S. Nagata, and A. Winnacker

. . .2609-2612

Implantation damage recovery and carrier activation studies of Si-implanted Alo.isGa0.82N

by temperature dependent Hall-effect measurements

Mee-Yi Ryu, Y. K. Yeo, and Robert L. Hengehold 2613-2616

Characterization of free-standing GaN substrates prepared by self lift-off

S. W. Lee, H. Goto, T. Minegishi, W. H. Lee, J. S. Ha, H. J. Lee, Hyo-jong Lee, S. H. Lee,

T. Goto, T.Hanada,M.W. Cho, and T.Yao 2617-2620

Impact of Si+ implantation on reduction ofcontact resistance in Ti/Al contact to GaN

M. Satoh, N. Itoh, K. Nomoto, T. Nakamura, and T. Mishima 2621-2624

Fabrication ofreflective GaN mesa sidewalls for the application to high extraction efficiency LEDs

Jae-Soong Lee, Joonhee Lee, Sunghwan Kim, and Heonsu Jeon 2625-2628

Sensing dynamics and mechanism ofa Pd/AlGaN/GaN Schottky diode type hydrogen sensor

Masamichi Akazawa and Hideki Hasegawa 2629-2633

Inductively coupledplasma etching ofGaN using SiCL/CyAr for submicron-sized features

fabrication

R. Dylewicz, R. A. Hogg, P. W. Fry, P. J. Parbrook, R, Airey, A. Tahraoui, and S. Patela . . . 2634-2637

Self-separation ofthick two inch GaN layers grown by HVPE on sapphire using epitaxial lateral

overgrowth with masks containing tungsten

Ch. Hennig, E. Richter, M. Weyers, and G. Trankle 2638-2641

Photo-catalysis effect ofIII-V nitride film

Masatomo Sumiya, Keisuke Ohara, Takeo Ohsawa, Yu. Kawai, Masato Shirai,Shunro Fuke, Hideomi Koinuma, andYuji Matsumoto 2642-2645

Comparison ofNi/Au, ITO, and ATO-based current spreading layers for near-ultraviolet

light-emitting diodes

Wing Cheung Chong and Kei May Lau 2646-2649

Investigation of surface morphology ofn-type GaN after photoelectrochemical reaction in various

solutions for H2 gas generationKatsushi Fujii, Takashi Ito, Masato Ono, Yasuhiro Iwaki, Takafumi Yao,

and Kazuhiro Ohkawa 2650-2653

2200Contents

Transport properties and electron devices

A monolithic Cockcroft-Walton voltage multiplier based on AlGaN/GaN HFET structure

Jin-Ping Ao, Yoshikazu Matsuda, Yuya Yamaoka, and Yasuo Ohno 2654-2657

Buffer breakdown voltage of AlGaN/GaN HFET on a 4 inch Si(l 11) substrate grown by MOCVDMasayuki Iwami, Sadahiro Kato, Yoshihiro Satoh, Hitoshi Sasaki, and Seikoh Yoshida

..

. .2658-2661

Low on-resistance of GaNp-/-« vertical conducting diodes grown on 4H-SiC substrates

Atsushi Nishikawa, Kazuhide Kumakura, and Toshiki Makimoto 2662-2665

Analysis of buffer-related lag phenomena and current collapse in GaN FETs

K, Itagaki, N. Kobayashi, and K. Horio 2666-2669

Realization ofAlGaN/GaN HEMTs on Si-on-polySiC substratesYvon Cordier, Sebastien Chenot, Marguerite Latlgt, Olivier Tottereau, Sylvain Joblot,Fabrice Semond, Jean Massies, Lea Di Cioccio, and Hubert Moriceau 2670-2673

Normally-off operation in AlGaN/GaN/AlGaN double helerojunction field effect transistors

Mitsuaki Shimizu, Masaki Inada, Shuichi Yagi, Guanxi Piao, Hajime Okumura,Kazuo Arai, Yoshiki Yano, and Nakao Akutsu 2674-2677

An analysis of the increase in sheet resistance with the lapse oftime ofAlo,3Gao.7N/GaN HEMTstructure wafers

Junjiroh Kikawa, Tomoyuki Yamada, Tadayoshi Tsuchiya, Shinichi Kamiya,Kenichi Kosaka, Akihiro Hinoki, Tsutomu Araki, Akira Suzuki, and Yasushi Nanishi 2678-2681

Off-state drain current and breakdown voltage of AlGaN/GaN MIS-HEMT with multilayered gateinsulator

S. Yagi, M. Shimizu, M. Inada, H. Okumura, H. Ohashi, Y. Yano, and N. Akutsu 2682-2685

Suppression of gate leakage current in i-AlGaN/GaN heterostructures by insertion ofanodic A1203layer and influence ofthermal annealing on channel electrons

T. Sawada, K. Takahashi, K. Ise, K. Suzuki, K. Kitamori, N. Kimura, K. Imai, S.-W. Kim,

and T.Suzuki 2686-2689

Gate leakage currents ofAlGaN/GaN HEMT structures grown by metalorganic vapour phase epitaxyT. Yamada, T. Tsuchiya, K. Imada, M. Iwami, J. Kikawa, T. Araki, A. Suzuki,andY. Nanishi 2690-2694

Monte Carlo study of high-field electron transport characteristics in AlGaN/GaN heterostracture

considering dislocation scatteringYoshihiro Tomita, Hirofumi Ikegami, and Hiroki I. Fujishiro 2695-2699

AlGaN/GaN MIS-HEMTs with Hf02 gate insulator

A. Kawano, S. Kishimoto, Y. Ohno, K. Maezawa, Takashi Mizutani, H. Ueno, T. Ueda,and T. Tanaka 2700-2703

Si+ implanted AlGaN/GaN HEMTs with reduced on-resistance

Kazuki Nomoto, Tomoyoshi Mishima, Masataka Satoh, and Tohru Nakamura 2704-2707

Fabrication of enhancement-mode ALOai .^N/GaN junction heterostructure field-effect

transistors with p-type GaN gate contact

T. Fujii, N. Tsuyukuchi, Y. Hirose, M. Iwaya, S. Kamiyama, H. Amano, and I. Akasaki.. . . 2708-2711

Analysis ofelectrical properties of insulators (Si3N4, Si02, AlN, and Al2O3)/0.5 nm SijN^AlGaN/GaNheterostructures

Narihiko Maeda, Masanobu Hiroki, Noriyuki Watanabe, Yasuhiro Oda, Haruki Yokoyama,TakumaYagi, Toshiki Makimoto, Takatomo Enoki, and Takashi Kobayashi 2712-2715

Carrier transport studies ofdichromatic InGaN-based LEDs with spacer bandgap dependenceShih-Wei Feng, C. C.Pan, Jen-Inn Cliyi, Chien-Nan Kuo, and Kuei-Hsien Chen 2716-2719

Contents 2201

Characterization of AlGaN/GaN MOSHFETs with A1203 as gate oxide

D. Gregusova, R. Stoklas, K. Cico, G. Heidelberger, M. Marso, J. Novak,

andP.Kordos 2720-2723

Origin and elimination method of parasitic gate leakage current for AlGaN/GaN heterostructure

field effect transistor

Tamara Baksht, Yaron Knafo, Joseph Kaplun, and Gregory Bunin 2724-2727

Correlation between the leakage current and the thickness ofGaN-layer ofAlGaN/GaN-HFET

Akihiro Hinoki, Shinichi Kamiya, Tadayoshi Tsuchiya, Tomoyuki Yamada,

Junjiroh Kikawa, Tsutomu Araki, Akira Suzuki, and Yasushi Nanishi 2728-2731

Quasi-normally-offAlGaN/GaN HEMTs fabricated by fluoride-based plasma treatment

Hiroaki Mizuno, Shigeru Kishimoto, Koichi Maezawa, and Takashi Mizutani 2732-2735

Novel field plate structure ofAlGaN/GaN HEMTs

AkiraNakajima, Mitsuaki Shimizu, and Hajime Okumura 2736-2739

Series resistance in a GaN/AlGaN/n-Si structure grown by MOVPE

Yoshio Honda, Satoshi Kato, Masahito Yamaguchi, and Nobuhiko Sawaki 2740-2743

Temperature distribution analysis of AlGaN/GaN HFETs operated around breakdown voltage

using micro-Raman spectroscopy and device simulation

Kenichi Kosaka, Tatsuya Fujishima, Kaoru Inoue, Akihiro Hinoki, Tomoaki Yamada,

Tadayoshi Tsuchiya, Junjiroh Kikawa, Shinichi Kamiya, Akira Suzuki, Tsutomu Araki,

and Yasushi Nanishi 2744-2747

Evaluation ofAlGaN/GaN-HFET with HfAlO gate insulator

H. Sazawa, K. Hirata, M. Kosaki, N. Shibata, K. Furuta, S. Yagi, Y. Tanaka, A. Kinoshita,

M. Shimizu, and H. Okumura 2748-2751

Optical properties and devices

Time-resolved four-wave mixing studies of excitons in GaN

K. Yamaguchi, Y. Toda,T. Ishiguro, S. AdachlK.Hoshino, and K.Tadatomo 2752-2755

Mega-cone blue LEDs based on ZnO/GaN direct waferbondingA. Murai, D. B. Thompson, H. Masui, N. Fellows, U. K. Mishra, S. Nakamura,

and S. P. DenBaars 2756-2759

Photoluminescence study ofisoelectronic traps in dilute GaAsN alloys

H. Yaguchi, T. Aoki, T. Morioke, Y. Hijikata, S. Yoshida, M. Yoshita, H. Akiyama,

D.Aoki.andK. Onabe 2760-2763

GaN/air gap based micro-opto-electro-mechanical (MOEM) Fabry-Perot filters

E. Cho, D. Pavlidis, and E. Sillero 2764-2767

Significance ofvertical carrier capture for electroluminescence efficiency in InGaN

multiple-quantum well diodes

T. Inada, A. Satake, and K. Fujiwara 2768-2771

Experimental and theoretical study of substrate modes in (AlJn)GaN laser diodes

H. Braun, C. Lauterbach, U. T. Schwarz, V. Laino, B. Witzigmann, C. Rmnbolz,

M. O. Schillgalies, A. Lell,V. Harle, andU. Straufi 2772-2775

Coherent manipulation of A and B excitons in GaN

T. Ishiguro, Y. Toda, S. Adachi, K. Hazu, T. Sota, and S.F.Chichibu 2776-2779

2202 Contents

Radiative and non-radiative transitions in blue quantum wells embedded in AlInGaN-based laser

diodes

J. K. Son, S. N. Lee, H. S. Paek, T. Sakong, K. H. Ha, O. H. Nam, and Y. Park 2780-2783

Temperature dependence ofthe quantum efficiency in green light emitting diode dies

Y. Li, W. Zhao, Y. Xia, M. Zhu, J. Senawiratne, T. Detchprohm, E. F. Schubert,

and C.Wetzel 2784-2787

Inhomogeneity ofInGaN quantum wells in GaN-based blue laser diodes

Sung-Nam Lee, H. Y. Ryu, H. S. Paek, J. K. Son, T. Sakong, T. Jang, Y. J. Sung, K. S. Kim,K. H. Ha, O.H. Nam, andY. Park 2788-2792

Investigation oflocal tunneling phenomena in green InGaN-based LEDs

Grigory Onushkin, Jinhyun Lee, Jung-Ja Yang, Seong-Eun Park, Min-Ho Kim,

and Masayoshi Koike 2793-2796

Improvements ofquantum efficiency and thermal stability by using Si delta doping in blue

InGaN/GaN multiple quantum well light-emitting diodes

Gwo-Mei Wu, Ta-Jen Chung, Tzer-En Nee, Da-Chuan Kuo, Wei-Jen Chen, Chih-Chun Ke,Cheng-Wei Hung, Jen-Cheng Wang, andNei-Chuan Chen 2797-2801

Temperature measurement of GaN-based blue-violet laser diodes in operation by Raman microprobeKenji Takahashi, Daisuke Matsuoka, Hiroshi Harima, Kenji Kisoda, Yuhzoh Tsuda,

Takayuki Yuasa, and Mototaka Taneya 2802-2805

Extraction-efficiency enhancement ofInGaN-based vertical LEDs on hemispherically patternedsapphire

Jae-Hoon Lee, Jeong-Tak Oh, Seok-Boem Choi, Jong-Gun Woo, Su-Yeol Lee,and Myoung-Bok Lee 2806-2809

Blue light emitting diode fabricated on a-plane GaN film over r-sapphire substrate and on a-planebulk GaN substrate

Y. Naoi, K. Ikeda, T. Hama, K. Ono, R. Choi, T. Fukumoto, K. Nishino, S. Sakai, S. M. Lee,andM. Koike 2810-2813

Electroluminescence uniformity in green LEDs and dual color blue/green stacking LEDs

Grigory Onushkin, Jinhyun Lee, Jung-Ja Yang, Seong-Suk Lee, In-Chul Lee, Min-Ho Kim,and Masayoshi Koike 2814-2817

Micro-analysis of light emission properties of GaN-based laser diodes

M. Godlewski, R. Bozek, S. Miasojedovas, S. Jursenas, K. Kazlauskas, A. Zukauskas,M. R. Phillips, R. Czernecki, G. Targowski, P. Perlin, M. Leszczynski, T. Bottcher, S. Figge,andD. Hommel 2818-2821

Near-UV to violet LEDs - Wavelength dependence ofefficiency limiting processesM. Kunzer, U. Kaufmann, K. KShler, C. C. Leancu, S. Liu, and J. Wagner 2822-2825

Mechanisms of metalorganic vaporphase epitaxy of InGaN quantum wells on GaN microfacet

structures

M. Ueda, K. Hayashi, T. Kondou, M. Funato, Y. Kawakami, Y. Narukawa, and T. Mukai. . .

2826-2829

Multi-color light emitting diode using polarization-induced tunnel junctionsMichael J. Grundmann and Umesh K. Mishra 2830-2833

Effects ofjunction temperature and its variations on the performance ofGaN-based high power

flip-chip LEDs

L. Lin, Z. Z. Chen, H. P. Pan, S. L. Qi, P. Liu, Z. X. Qin, T. J. Yu, B. Zhang, Y. Z. Tong,and G.Y.Zhang 2834-

Contents 2203

Time-resolved photoluminescence spectroscopy in a GaN/AlGaN SQW stmcture grown on a (11 l)Sisubstrate

Eunhee Kim, Tetsuo Narita, Yoshio Honda, Masahito Yamaguchi, and Nobuhiko Sawaki. . .

2838-2841

Wave guide optimization for homoepitaxial laser diodes

S. Figge, J. Dennemarck, T. Aschenbrenner, A. Zargham, and D. Hommel 2842-2845

Detectors

Aluminum nitride/indium nitride bilayer and multilayer thin film systems as coatings for solar cells

and longwave-pass filters

Jebreel M. Khoshman and Martin E. Kordesch 2846-2849

Wide spectral responses In/ja^N deep UV photomultiplier tube

Shoichi Uchiyama, Yasufumi Takagi, Haruyasu Kondoh, Hiroyuki Takatsuka, Hideaki Suzuki,

Yasuo Ohishi, Nobuharu Suzuki, Kazuyoshi Okano, Minora Niigaki, and Hirofumi Kan. . . . 2850-2853

1.2-eV GaAsN/InGaAs strain-compensated superlattice structures for high efficiency solar cells

Pei-Hsuan Wu, Yan-Kuin Su, I-Liang Chen, Chih-Hung Chiou, Jung-Tsung Hsu,

and Wen-Ray Chen 2854-2858

Further papers of Workshop IWN 2006 are published in physica status solidi (a) 204, No. 6 (2007)

and physica status solidi (b) 244, No. 6 (2007).

physica status solidi (c) is indexed in Cambridge Scientific Abstracts; CSA Technology Research Database

(CSA/CIG); Chemical Abstracts Service/SciFinder (ACS); COMPENDEX (Elsevier); FI2 Karlsruhe Databases (FI2

Karlsruhe); Google Scholar; INSPEC; Physics Abstracts (IET); ISI Index to Scientific & Technical Proceedings; PASCAL

Database (INIST/CNRS); SCOPUS (Elsevier); VINITI (All-Russian Institute of Science & Technological Information).

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