Integrated Technology (ICSICT 2010) · Wei-MingYang, Shu-Qing Duan,Yu-KeWang,QiangGuo,Wei-Ting...

2010 10th IEEE International

Conference on Solid-State and

Integrated Circuit Technology

(ICSICT 2010)

Shanghai, China

1-4 November 2010

Pages 1380-2076

Editors:

Ting-Ao Tang

Yu-Long Jiang

IEEE Catalog Number: CFP10829-PRT

ISBN: 978-1-4244-5797-7

3/3

Displays, sensors and MEMS

Ill_01

(Invited)

Ill_02

(Invited)

Ill_03

(Invited)

Ill_04

(Invited)

Ill_05

(Invited)

Ill_06

(Invited)

Ill_07

(Invited)

Oil 01

CMOS Current Source Based Radiation Sensors

E. Garcia-Moreno, R. Picos, E. Isern, M. Roca, J. Font, K. Suenaga

University of Balearic Islands, Spain

Low-power consumption gas sensors based on decorated multi-wall carbon nanotubes

Jacobus W. Swart1, Stanislav A. Moshkalev2

'Center for Information Technology Renato Archer, Brazil; 2Center for Semiconductor

Components, Brazil

A Flexible, Highly-Sensitive, and Easily-Fabricated Carbon-NanoTubes Tactile Sensor

on Polymer Substrate

ChiaHua Ho1, Wang-Shen Su1, Chih-Fan Hu2, Chia-Min Lin2, Weileun Fang1'2, and Fu-Liang

Yang1'National Nano Device Laboratories, Taiwan, China;2 National Tsing Hua University,

Taiwan, China

Label-free biomarker detection from whole blood

Eric Stern1, Aleksandar Vacic2, Nitin K. Rajan2, Jason M. Criscionel, Jason Park1, Tarek M.

1,4Fahmy ' ,and Mark A. Reed

Yale University, School of Engineering and Applied Science, Departments of'Biomedical,2Electrical and 3Chemical Engineering and 4Applied Physics, USA

Multi-Axis Integrated CMOS-MEMS Inertial Sensors

Huikai Xie', Hongzhi Sun', Kemiao Jia', Deyou Fang', and Hongwei Qu2'University of Florida, USA; 2Oakland University, USA

Micro/Nano technologies towards Smart Systems Integration

Thomas Gessner, Martina Vogel,Christian Kaufmann, Karla Hiller, Steffen Kurth, Jorg

"Nestler, Thomas Otto

Chemnitz University of Technology

Shaping nanomembrane technologies

Oliver G. Schmidt

Institute for Integrative Nanosciences, 1FW Dresden, Germany.

Line Width Dependence on Glucose Detection Characteristics of Poly-silicon Wire

(PSW) Sensors with a Surface Modified by Polydimethylsiloxane-treated Silica

Nanoparticlcs (NPs)

Po-Yen Hsu1, You-Lin Wu1 and Jing-Jenn Lin2, Jheng-Jia Jhuang'

1380

1384

1388

1392

1394

1396

1400

1401

'

Department of Electrical Engineering, National Chi Nan University, Taiwan, China;2

Department ofApplied Materials and Optoelectronic Engineering, National Chi Nan

University, Taiwan, China.

O1102 Design of a 0.8V Low Power CMOS Temperature Sensor for RFID-based Train Axle 1404

Temperature Measurement

Jianqin Qian, Jia Chen, Chun Zhang, Liji Wu

Tsinghua University, China

Displays, sensors and MEMS

Oll_03 Single-walled Carbon Nanotue Pirani Vacuum Gauge 1407

Wei Li1,2, Zhihui Wang1, Jinwen Zhang''Peking University, China;

2Shenzhen Graduate School of Peking University, China

01104 Numerical Study of Performance Comparison between Junction and Junctionless 1410

Thin-Film Transistors

Ching-Yao Pai, Jyi-Tsong Lin, Shih-Wei Wang, Chia-Hsien Lin, Yu-Sheng Kuo, Yi-Chuen

Eng, Po-Hsieh Lin, Yi-Hsuan Fan, Chih-Hsuan Tai, Hsuan-Hsu Chen, Cheng-Hsin Chen, and

Kuan-Yu Lu

National Sun Yat-Sen University, Taiwan, China

01105 TaN Etch in CF4/CHF3 gas for MEMS/Sensor Application 1413

Xiaoxu Kang, Weijun Wang, Quanbo Li, Jiaqing Li, Chao Yuan

Shanghai IC R&D Center, China

Oll_06 Phase correction in digital self-oscillation drive circuit for improve silicon MEMS 1416

gyroscope bias stability

Guo-Ming Xia, Bo Yang, Shou-Rong Wang

Southeast University, China

01107 Tunable Photonic Crystals based on Photoinduced Deformations of Crosslinkcd 1419

Liquid-crystalline Polymers

Xin Zhao',Xinming Ji',Wu Wei2,Yanlei Yu2,Futao Cheng2,ZongMing Bao',Yiping Huang1'

Department of Microelectronics, Fudan University, China;2Department of Materials

Science,Fudan University, Shanghai 200433, China

01108 Design and Simulation of High-Frcqucncy (>100 MHz) Ultrasonic Phased Array 1422

Transducer

Jin-Ying Zhang1'2, Wei-Jiang Xu1, Xin-Ming Ji2, Julien Carlier1, Beitrand Nongaillard1,Yi-Ping Huang21Universite de Valenciennes, France;

2Fudan University, China

Oll_09 Study on polysilicon extended gate field effect transistor with samarium oxide sensing 1425

membrane

Chyuan-Haur Kao', Hsian Chen2, Kung Shao Chen', Chuan-Yu Huang1, Ching-Hua Huang1,Jiun-Cheng Ou', Chih Ju Lin', Keng Min Lin', Lien Tai Kuo11

Chang Gung University, Taiwan, China;2Chi Nan University

OH IO Fabrication and Analysis of Super-hydrophobic ZnO film for microiluidic devices 1428

Sheng Yang, Yiting Wang, Xiangyu Zeng, Jia Zhou

P1102 A Fast Integrated a-Si Gate Driver 1438

Congwei Liao", Longyan Wang", Changde He", Yinan Liang", and Shengdong Zhang", David

Daib, Smart Chungb and T. S. Jen1'

a Shenzhen Graduate School, Peking University, PRC;bInfoVision Optoelectronics

(Kunshan) Co., Ltd, PRC

P1103 The microfluidic chip fabricated by Hot Embossing Lithography for single- 1441

microsphere test

Peng Gao, Yuanqing Wu, Chao Xu, Suying Yao

Tianjin University, China

P1104 A High-Accuracy Temperature Sensor With An Inaccuracy of ±1 °C From-55°C 1444

to 125 °C

Jianguang Chen, Shaolong Liu, Yuhua Cheng,

Peking University, China

P1105 A Novel Closed-Loop Controlled Interlace IC for Differential-Capacitive Sensor 1447

Systems

Xiaozong Huang, Wengang Huang, Yingjun Zhong and Zhengrong He

Analog IC Design Center, SISC, China

Pll_06 A Ka-Band 3-bit RF MEMS Switched Line Phase Shifter Implemented in Coplanar 1450

Waveguide

Zheng Wang, Zewen Liu, Xiang Li


Pll_07 A New Four-Transistor Poly-Si Pixel Circuit for AMOLED 1453

Longyan Wang1, Congwei Liao2, Yinan Liang2, and Shengdong Zhang1,21Institute ofMicroelectronics, Peking University, China;

2Shenzhen Graduate School,


Pll_08 A low-noise interface circuit for MEMS vibratory gyroscope 1456

Ran Fang1, Wengao Lu1, Chang Liu2, Zhongjian Chen1, Yuan Ju1, Guannan Wang', Lijiu Ji1,

Dunshan Yu'

1

Peking University, China;2

Georgia Institute of Technology, Atlanta

Pll_09 Narrow-band Midinfrared Thermal Emitter Based on Photonic Crystal for NDIR Gas 1459

Sensor

Xinming Ji, Xin Zhao, Peng Jing, Fang Xing, Yiping Huang

Fudan University, China

PI1_10 THE ELECTRO-THERMAL RESPONSE PROPERTIES OF MIRO PIRANI 1462

VACUUM GAUGE

Jinwen Zhang1, Long Wang1, Xin Wang1'2, Wei Jiang1'

Peking University, China;2Shenzhen Graduate School of Peking University, China

Pll ll A Study on Metal-Insulator-Silicon Hydrogen Sensor with La203 as Gate Insulator 1465

Gang Chen1, P.T. Lai1, Jerry Yu2

1The University of Hong Kong, Hong Kong;

2RMIT University, Australia

P1112 Two-TransistorActive Pixel Image Sensor with Active Diode Reset 1468

Dongwei Zhang', Frank He2, Amine Bermak' and Mansun Chan11Hong Kong University of Science and Technology, China;

2


Pll_13 Ultra low power solenoid MEMS fluxgate sensor with amorphous alloy core 1471

Chong Lei, Lei Chen, Yong Zhou, Zhimin Zhou

Shanghai Jiao Tong University, China

P1114 Separation of Blood on a Chip Utilizing Spiral Micorchannel with Fence and 1474

Cofferdam as Filtration Structures

Zhaoxin Geng1'2'3, Zhaoqi Xu1"' Wei Wang1, Wenhua Su4 and Zhihong Li11

Peking University, China;2Minzu University of China, China;

3Chinese Academy of

Sciences, China4

Peking University Hospital, China

P1115 Column-Parallel Integrating ADCs for Infrared Image Sensor 1477

Ziqi Song, Dong Wu, Yanzhao Shen, Jun Xu


P1116 A Novel Capacitive Barometric Pressure Sensor Based on the Standard CMOS Pess 1480

Meng Nie, Qing-An Huang, Hui-Yang Yu, Ming Qin, Wei-Hua Li


P1117 DNA Sequencing with nanopore-embedded bilayer-graphene nanoelectrodes 1483

Y. He1, R. Scheicher2, A. Grigoriev2, R. Ahuja2, S. Long1, Z. Huo1, Ming Liu1,1Chinese Academy of Sciences, China;

2Uppsala University, Sweden

Pll_20 Immunosensor for Detecting Pulmonary Tuberculosis Markers in Human Serum 1486

Chun Xu1, Xiao-sen Chai1, Shu-lin Zhang2, Jia Zhou1

'Department ofMicroelectronics, Fudan University, China;

2State Key Laboratory of

Genetic Engineering, Fudan University, China

Pll_21 A Novel NDIR C02 Sensor Using a Mid-IR Hollow Fiber as a Gas Cell 1489

Jing Peng1, Xin-Min Ji1, Yi-Wei Shi2, Quan Liu1, Zong-Ming Bao1, Yi-Ping Huang11

Department of Microelectronics, Fudan University, China;2Department of

Communication Science and Engineering, Fudan University, China

P1122 Study on Compensation Method for Vertical Trench Using Anisotropic Wet Etching 1492

Mingquan Yuan1, Kan Yu1, Xiaomei Yu1,21Peking University, China;

2National Key Laboratory of Science and Technology on

Micro/Nano Fabrication, China

P1123 An Acceleration Latching Switch With Flexible Contacts and Barb Latching 1495

Mechanism

X.Y.Zhang, Z.Y.Guo, H.T.Ding, Z.C.Yang, G.Z.Yan


Semiconductor materials and material characterization

I12_01

(Invited)

Defect characterization of crystalline metal oxides and high-fr films by means of

positron annihilation

Akira Uedono'1, Shoji Ishibashi2, Nagayasu Oshima3, Toshiyuki Ohdaira3, and Ryoichi

1498

Suzuki

'University of Tsukuba, Japan; 2'3National Institute ofAdvanced Industrial Science and

Technology, Japan

112 02 Phase formation and stability of Ni silicide contacts-scaling to ultra-thin films 1502

(Invited) C. Detavernier1, K. De Keyser1, C. Van Bockstael', J. Jordan-Sweet2, C. Lavoie2

'Ghent University, Belgium;2 IBM T.J. Watson Research Center, USA

112 03 High-Resolution X-ray Microdiffraction Analysis of Local Strain in Semiconductor 1506

Materials

(Invited) Shigeru Kimura', Yasuhiko Imai1, Osami Sakata1, and Akira Sakai2

'japan Synchrotron Radiation Research Institute, Japan;2 Osaka University, Japan

112 05 Atomically Controlled Processing in Strained Si-Based CVD Epitaxial Growth 1513

(Invited) Junichi Murota ', Masao Sakuraba1and Bernd Tillack

2'3

1Tohoku University, Japan;2IHP, Germany; 3Technische Universitat Berlin, Germany

112 06 Characterization of wafer-bonded substrates for advanced channels in Si-based 1517

MOSFET

(Invited) Akira Sakai

Osaka University, Japan

112 07 Atomically Controlled Plasma Processing for Epitaxial Growth of Group IV 1521

Semiconductors

(Invited) Masao Sakuraba and Junichi Murota

Tohoku University, Japan;

112 08 Defect characterization and control for SiGe-on-insulator 1525

(Invited) Dong Wang, Haigui Yang, Hiroshi Nakashima1

Kyushu University, Japan

O12_02 Influence of neutron irradiation on the deep levels in GaN 1533

Minglan Zhang1,2, Xiaoliang Wang', Hongling Xiao', Cuibai Yang', Ru Wang2'Chinese Academy ofSciences, China;

2Hebei University ofTechnology, China

O12 03 Structural evolution of the incubation layer in micrystalline silicon films deposited by 1536

Jet-ICPCVD

Zewen Zuo', Yu Wang1, Yu Xin2, Jin Lu1, Junzhuan Wang1, Lin Pu', Yi Shi',Youdou Zheng1'

Nanjing University, Nanjing 210093, China;2Soochow University, China

O12 04 Impact of FIB parameters on TEM sample preparation for low-k pess 1539

Wei-Ming Yang, Shu-Qing Duan, Yu-Ke Wang, Qiang Guo, Wei-Ting Kary Chien

Semiconductor Manufacturing International Corporation, China

O12 05 The Research of Piezoresistive Effect in Different Temperature Based on AlGaN/GaN 1542

HEFT-micro-accelerometer

Jianjun TANG3, Ting LIANG3, Qianqian ZHANGa'b, Yong WANGC, Weili SHI", Jie WANG",

Jijun XIONG3'b

"North University ofChina, National Key Laboratory of Science and Technology on

Electronic Test and Measurement, China; bKey Laboratory ofInstrumentation Science &

Dynamic Measurement (North University of China), China;0

The 13th Research Institute,

CETC, China

O12_06 A comprehensive transport model for the electron mobility in wurtzite AlxGal-xN 1545

lattice-matched to GaN

Qing-Yang Yao,Lin-An Yang, Yue Hao

Xidian University, China

O12 07 Impact offorming gas annealing on ZnO-TFTs 1548

J. Huang, U. R. Krishna, M. Lemberger, M. R M. Jank,H. Ryssel, L. Frey

Fraunhofer Institute for Integrated Systems and Device Technology (USES), Germany

P12_01 Effect of rapid thermal annealing on the optical properties of Nb205-A1203 1551

nanolaminate films

Yue Muang, Yan Xu, Hong-Liang Lu, Qing-Qing Sun, Shi-Jin Ding ,and Wei Zhang

Fudan University, Shanghai

P12_02 Activation characteristics of Si-implanted GaN by rapid thermal annealing 1554

Jiangfeng Du, Jinxia Zhao, Qi Yu, and Mohua Yang

University of Electronic Science and Technology ofChina, China

P1203 Ge/Si02 Low Temperature Wafer Bonding 1557

Jian Xin Shen1, Xuan Xiong Zhang1'2, Tian Chun Ye2, Songlin Zhuang1,1

University of Shanghai for Science and Technology, China;2Chinese Academy of

Sciences, China

P12 04 Study on Switching Performance of VOx Thin Film in THz Band 1560

Tao Chen, Ming Hu, Lei Tan, Liu-Chen Wang, Li Li

Tianjin University, China

P12_05 Internal gettering ofcopper contamination in Czochralski silicon 1563

Lixia Lin1, Jiahe Chen1'2, Deren Yang11Zhejiang University, China;

2Technische Universitat Dresden, Germany

P12_06 An improved electron mobility model for wurtzite ZnO 1566

Lin-An Yang, Qing-Yang Yao, Xu-Hu Zhang, Qi Liu, Yue Hao


P12 07 Raman scattering investigation of defects in thick homoepitaxial 4H-SiC films 1569

Hailei Wu1,, Guosheng Sun1, Guoguo Yan1, Lei Wang1, Wanshun Zhao1, Xingfang Liu1,

Yiping Zeng1 and Jialiang Wen21Chinese Academy of Sciences, China;

2China Electric Power Research Institute, China

P12 08 Normalized Differential Conductance Spectroscopy to study the tunneling properties 1572

ofpost soft breakdown Si02

Mingzhen Xu and ChanghuaTan


P12 09 SiC Warm-Wall LPCVD Growth on Multiple 50-mm Diameter Wafers 1575

Guoguo Yan1, Guosheng Sun', Hailei Wu',Yongmei Zhao1, Jin Ning1, Lei Wang1, Wanshun

Zhao1, Xingfang Liu1, Yiping Zeng' and Jialiang Wen2

'Chinese Academy of Sciences, China;

2China Electric Power Research Institute, China

Rapid-Melting-Growth of Gc on Insulator using Cobalt (Co) Induced-Crystallized Ge

as the Seed for Lateral Growth

Thanh Hoa Phung1, Meijun Chen1'2, Hong Joo Rang1,2, Chunfu Zhang1, Mingbin Yu2,

Chunxiang Zhu1,1National University of Singapore, Singapore;

2Institute ofMicroelectronics, Singapore

Fabrication of size-controlled Si NCs in Si-rich Si nitride for floating gate MOS

structures

Zhong-Hui Fang, Kun-Ji Chen, Zhong-Yuan Ma , Guang-Yuan Liu, Xin-Ye Qian, Xiao-Fan

Jiang, Xian-Gao Zhang, Xin-Fan Huang

Nanjing University, China

On-Chip ESD Detection Circuit for System-Level ESD Protection Design

Ming-Dou Ker l2, Wan-Yen Lin1, Cheng-Cheng Yen1, Che-Ming Yang3, Tung-Yang Chen3,Shih-Fan Chen3

'National Chiao-Tung University, Taiwan, China; 2I-Shou University, Taiwan, China;3

Himax Technologies, Taiwan, China

High-K dielectric stack percolation breakdown statistics

Jordi Sufie', Ermest Y. Wu2 and S. Tous1

'Universitat Autonoma de Barcelona, SPAIN; 2IBM Microelectronics Division, Essex

Junction, VT, USA

Study of Humidity Reliability ofHigh Power LEDS

Chen Ming Tan1'2, Boon Khai Eric Chen2, Meng Xiong1

'Nangyang Technological University, Singapore; 2Singapore Institute of Manufacturing

Technology, Singapore

Mixed-Mode Simulation-Design for IEC-ESD Protection

Fei Yao1, Xin Wang2, Shijun Wang1, Bo Qin1, Albert Wang2, Hongyi Chen3, Siqiang Fan4and

Bin Zhao41CitrusCom Semiconductor, China; 2University ofCalifornia, USA; 3Tsinghua

University, China;4Fairchild Semiconductor, USA

Effective threshold voltage shift: a measure for NBTI removing uncertainty in mobility

degradation

J. F. Zhang, Z. Ji, L. Lin and W. Zhang

Liverpool John Moores University, UK

Recent Progress in Testing, Characterization and Protection for CDM ESD Events

Yuanzhong (Paul) Zhou, Alan W. Righter and Jean-Jacques Hajjar

Analog Devices, USA

NBTI-related issues in deep submicron pMOSFETs

F.Yan X.Ji ', Y.Liao ',X.Cheng' ,X.Zhu' ,Y.Shi 'D.Zhang2, Q.Guo2

'Nanjing University, China; Semiconductor Manufacturing International Corporation, China

I13_08 Investigation ofTunneling Field Effect Transistor Reliability 1612

(Invited) G. F. Jiao1, X. Y. Huang1, Z. X. Chen2'3, W. Cao1, D. M. Huang', H. Y. Yu2'3, N. Singh2, G.

Q. Lo2, D.-L. Kwong2, Ming-Fu Li1

'Fudan University, Shanghai 200433, China; 2A*STAR (Agency for Science, technology and

Research), Singapore; 3Nanyang Technological University, Singapore

01302 Comparison of the On-Resistance degradation in pLEDMOS with the different 1619

geometrical parameters

Hu Sun, Qin-Song Qian, Wei-Feng Sun, Si-Yang Liu


01303 An Improved Static NBTI Model with Physical Geometry Scaling 1624

Yue Zhang1 ,Miao Li2, Yan-Feng Li2, Xiao-Hua Ma3, Yan-Rong Cao4

,Yue Hao1

'School ofMicroelectronics, Xidian University, China; 2Accelicon Technologies, Inc,

China; 3School of Technical Physics, Xidian University, China;4School of

Electronical & Machanical Engineering, Xidian University, China

O13_04 Trigger Voltage Walk-in Effect of ESD Protection Device in HVCMOS 1627

Meng Miao, Shurong Dong , Mingliang Li, Yan Han, Bo Song, Fei Ma

Zhejiang University, China

O13 05 Study of High-gate-voltage Stress Using the Reverse Gated-diode Current 1630

Measurement in LDD n-type and p-type MOSFET's

Haifeng Chen1, Xiaohua Ma2, Huimin Du1,Lixin Guo'

, Shiguang Shang', Duan Xie1

1Xi'an University of Posts and Telecommunications, China;

2Xidian University, China

O13_06 A capacitance coupling complementation SCR for on-chip electrostatic discharge 1633

protection

Mingliang Li, Shurong Dong, Meng Miao, Bo Song, Fei Ma, and Yan Han

Zhejiang University, China

01307 Including the Effects of Pess-Related Variability on Radiation Response Using a New 1636

Test Chip

Yanfeng Li1

,Nadia Rezzak2

,Ronald D. Schrimpf2, Daniel M. Fleetwood2, Enxia

Zhang2,Yanjun Wul

, Shuang Cai ', Jingqiu Wang3, Donglin Wang3 ,

1Accelicon Technologies, Inc, CA;

2 Vanderbilt University, USA;3 Chinese Academy of

Science, China.

01308 Logarithm Cofactor Difference Extrema ofMOS Devices' Post-Breakdown Current 1639

and Application to Parameter Extraction

Chenyue Ma l'2, Chenfei Zhang2, Xiufang Zhang2, Frank He''2'3

and Xing Zhang1'21

Peking University Shenzhen Graduate School, China;2Peking University, China;

3

Peking University Shenzhen SOC Key Laboratory, PKU HK.UST Shenzhen Institute, 1ER

Bldg., China

O13_09 CMOS NBTI degradation and recovery behaviors in a wide temperature range 1642

X.Ji1, Y.Liao1, B.Yu1, F.Yan1,Y.Shi1, D.Zhang2, Q.Guo21

Nanjing University, China;2 SMIC, P. R. China

01310 MOSRA: An Efficient and Versatile MOS Aging Modeling and Reliability Analysis 1645

Solution for 45nm and Below

Bogdan Tudor, Joddy Wang, Charly Sun, Zhaoping Chen, Zhijia Liao, Robin Tan, Weidong

Liu, and Frank Lee

Synopsys, Inc.

01311 Channel hot-carrier degradation on strained MOSFETs with embedded SiGe or SiC 1648

Source/Drain

E.Amat1, R.Rodriguez1, M.B.Gonzalez2, J.Martin-Martinez', M.Nafria1, X.Aymerich1,V.Machkaoutsan3, M. Bauer4,RVerheyen2 and E.Simoen2'Universitat Autonoma de Barcelona (Spain);2 imec, Leuven (Belgium);3 ASM Internation,

Leuven (Belgium);4 ASM International, Phoenix (USA)

01312 The Influence of Mechanical Strain on the Nanoscale Electrical Characteristics of Thin 1651

Silicon Dioxide Film

You-Lin Wu1, Bo-Tsuen Chen1, and Jing-Jenn Lin2'National Chi Nan University, Taiwan, China;2 National Chi Nan University, Taiwan, China

P13_03 CRC Circuit Design for SRAM-Based FPGA Configuration Bit Correction 1660

Wenlong Yang, Lingli Wang, Xuegong Zhou


P13_04 Investigation of ESD second breakdown TCAD simulation 1665

Cai Xiaowu, Yan Beiping, Han Xiaoyong

Hong Kong Applied Science and Technology Research Institute Company Limited (ASTRI),

Hong Kong

P1305 Design and thermal analysis of SiGe HBT with non-uniform finger length and 1668

non-uniform finger spacing

Liang Chen, Wan-rong Zhang, Dong-yue Jin, Ying Xiao, Ren-qing Wang

Beijing University ofTechnology, China

P1306 Experimental Research on the Damage Effect of HPM on Semiconductor Bipolar 1671

Transistor

Hailong You1 , Juping Fan1-2, Xinzhang Jia

1, Ling Zhangl

1Xidian University, China;

2Northwest Institute ofNuclear Technology, China

P13 07 Forward Gated-Diode Method for Extracting Gate Oxide Thickness and Body Doping 1674

Concentration

Chenfei Zhang1'2, Chenyue Ma2, Frank He ',2,3,, Xiufang Zhang1'2 and Zhiwei Liu3'

Peking University Shenzhen Graduate School, China;2

Peking University, China;3

Peking University Shenzhen SOC Key Laboratory, PKU HKUST Shenzhen Institute, IER

Bldg., China

P1308 DC Characteristics of High Performance Self-Aligned Bulk-Si Dual-Channel 1677

Source/Drain-Tied MOSFETs

Yi-Hsuan Fan, Jyi-Tsong Lin, and Yi-Chuen Eng


P13_09 Thermal Resistance Analysis Related to the Degradation of GaAs-Based Laser Diodes 1680

Yanbin Qiao1, Shiwei Feng1, Xiaowei Wang2, Xiaoyu Ma2, Haitao Deng1, Guangchen

Zhang1, and Chunsheng Guo1

'Beijing University of Technology, China; 2Chinese Academy of Sciences, China

P13_10 Reliability ofSolder Joints in High-power LED Package in Power Cycling Tests 1683

Haitao Deng, Shiwei Feng, Chunsheng Guo, Yanbin Qiao, and Guangchen Zhang


P1311 An Analytical Model for Negative Bias Temperature Instability 1686

Shengcheng Wang, Gang Du, Xiaoyan Liu


P13_12 Optimized Latch-up Design of a High Voltage nLDMOSFET 1689

Shen-Li Chen1, Tzung-Shian Wu1, Hung-Wei Chen1, Chun-Hsing Shih1, and Po-Ying Chen21National United University, Taiwan, China; 2I-Shou University, Taiwan, China

P13_13 Reliability Analysis of a New Vertical MOSFET with bMPI Structure for IT-DRAM 1692

Applications

Cheng-Hsin Chen, Jyi-Tsong Lin, Po-Hsieh Lin, Yi-Chuen Eng, Hsien-Nan Chiu, Tzu-Feng

Chang, and Hsuan-Hsu Chen

National Sun Yat-Sen University (NSYSU EE)

P13_14 Investigation on the Role of Hole Traps under NBTI stress In PMOS Device with 1695

Plasma-Nitrided Dielectric Oxide

Y.Liao'.X.Ji1, F.Wu1, X.Zhu1, F.Yan1 ,Y.Shi1 D.Zhang2 , Q.Guo2

'Nanjing University, China; 2SMIC, P. R. China

P1315 Stress Induced Leakage Current under NBT Stress in p-MOSFETs fabricated with 1698

65nm technologies

Z.Chen', X.Ji1, F.Yan1, Y.Shi1 D.Zhang2, Q.Guo21

Nanjing University, China; 2SMIC, P. R. China

PI3_16 Optimized Layout on ESD Protection Diode with Low Parasitic Capacitance 1701

Chih-Ting Yeh1'2 and Ming-Dou Ker2,3

1Industrial Technology Research Institute, Taiwan, China; 2National Chiao-Tung University,

Taiwan, China;31-Shou University, Taiwan, China.

P13_17 Investigation on the Reliability Corner ofpMOSFETs with Drain-Bias-Dependent 1704

NBTI Degradation

Yandong He, Ganggang Zhang, Xiaorong Duan


P13_18 FAST: A Framework of Accurate SER-Estimation at Transistor-Level for Logic 1707

Circuits

Yan Sun, Chao Song, Yali Zhao, and Minxuan Zhang

National University of Defense Technology, China

P13_19 Reliability Evaluation of Schottky Contact of AlGaN/GaN HEMT, Based on Two AC 1710

Voltages with Different Frequencies

Peifeng Hu, Shiwei Feng, Chunsheng Guo, Guangchen Zhang, Yanbin Qiao


P13_21 The Failure ofVDMOS Device Caused by the Mismatch of Coefficient of Thermal 1716

Expansion

Yin Jinghua1, Xu Dan2, Hua Qing1, He Yanqiang1, Song Mingxin', Cao Yijiang1'Harbin University of Science and Technology, China; 2Jilin Institute ofChemical

Technology, China

P13 22 Application of Proportional Difference Operator Method on Retention Characteristics 1719

Study of Flash Memory

Bing Xie, Mingzhen Xu and Changhua Tan


P13_23 Study ofLDMOS-SCR: A High Voltage ESD Protection Device 1722

Peng Zhang, Yuan Wang, Song Jia, Xing Zhang


Modeling and simulation

114 01 A Unified Compact Model for Emerging DG FinFETs and GAANanowire MOSFETs 1725

Including Long/Short-Channel and Thin/Thick-Body Effects

(Invited) Xing Zhou, Guojun Zhu, Machavolu K.. Srikanth, Shihuan Lin, Zuhui Chen, Junbin Zhang,

and Chengqing Wei

Nanyang Technological University, Singapore

114 02 Unified Modeling of Switched-Mode Power Supplies in Matlab using State-Space 1729

Representation

(Invited) S'ebastien Cliquennois1, Christophe Pr'emont2

'ST-Ericsson, Sweden; 2ST-Ericsson, France

114 03 Unified Analytical Modeling of GAA Nanoscale MOSFETs 1733

(Invited) Santosh K. Vishvakarma, Udit Monga, Tor A. Fjeldly

Norwegian University of Science and Technology, Norway

114 04 Transport Modeling forNanoscale Semiconductor Devices 1737

(Invited) M. Pourfath, V. Sverdlov, and S. Selberherr

Institute for Microelectronics, TU Wien, Austria

Numerical Study on Terahertz Detection of MOS Field-Effect Transistor

Frank He1'2, Zhifeng Yan1'2, Jingxuan Zhu1'2, Wen Wu2,Zhiwei Liu2

, Wenping Wang2 ,

Yong Ma2, Dongwei Zhang2, Wei Zhao2, and Juncheng Cao3

'Peking University, P. R. China;2 PKU HKUST Shenzhen Institute, P.R.China; 3Chinese

Academy ofSciences, China

Numerical Simulation ofTransient Heat Conduction in Nanoscale Si Devices

Yoshinari Kamakura1,2, Tomofumi Zushi3, Takanobu Watanabe3,Nobuya Mori1,2, and Kenj

Taniguchi1'Osaka University, Japan;2 CREST, JST, Japan;3 FWaseda University, Japan

Advances in Bipolar Junction Transistor Modeling

Tianbing Chen and James Ma

ProPlus Design Solutions Inc., USA

Zero-Tempcrature-Coefficient of Planar and MuGFET SOI Devices

J. A. Martino", L. M. Camillo0, L. M.Almeida3, E. Simoenband C. Claeysb'c

"University of Sao Paulo, Brazil; blmec, Belgium; CKU Leuven, Leuven, Belgium

Quantum Transport and Electron-Phonon Interaction in Nanoscale MOSFETs

Nobuya Mori1'2, Hideki Minari'"2, Genaddy Mil'nikov1'2, and Yoshinari Kamakura1'2

'Osaka University, Japan; 2CREST, JST, Japan

Experimental Extraction of Barrier Lowering and Backscattering in Saturated

Short-Channel MOSFETs

Gino Giusi1, Giuseppe Iannaccone2, Debabrata Maji3, Felice Crupi'

'University of Calabria, Italy; 2University ofPisa, Italy; 3Indian Institute ofTechnology,India

Quantum chemical approaches to the electronic structures of nano-electronics

materials

Masato Senami', Akitomo Tachibana''Kyoto University, Japan

UiMOR - UC Riverside Model Order Reduction Tool for PostLayout Wideband

Interconnect Modeling

Sheldon X.-D. Tan, Hai Wang, Boyuan Yan,

University of California, USA

TCAD Modeling Challenges for 22nm Node and beyond

JeffWu

Taiwan Semiconductor Manufacturing Company (TSMC) Ltd., Taiwan, China

SelfHeating Effects in Analog Bulk and SOI CMOS Circuits

Urmimala Roy, Enrico Sangiorgi, Claudio Fiegna'University of Bologna and IUNET, Italy

O14_02 A Proposal ofTrapezoid Mesa Trench MOS Barrier Schottky Rectifier 1789

Weiyi Li, Guo-Ping Ru, Yu-Long Jiang, Gang Ruan


01403 Transient effects of graded-channel partially depleted SOI mMOSFET 1792

Minghua Tang, Yongguang Xiao, Lianbao Zhang, Xiaolei Xu, Jun Zhang, Junxiong Tang

Xiangtan University, China

01404 Subthreshold Swing Model for Asymmetric 3T Double Gate (DG) MOSFETs 1796

Pramod Kumar Tiwari, Sarvesh Dubey and S. Jit

1T-BHU, India

O14 05 A novel automatic inductor model extraction methodology with ensured physical 1799

scalability

Yang Tang1, Miao Li2, Yan Wang1'

Tsinghua University, China; 2Accelicon Technologies, Inc, China

O1406 Processing Material Evaluation and Ultra-Wideband Modeling ofThrough-Strata-Via 1802

(TSV) in 3D Integrated Circuits and Systems

Zheng Xu1, Adam Beece1, Dingyou Zhang1, Qianwen Chen1,2, Kenneth Rose' and James

Jian-Qiang Lu1

"Rensselaer Polytechnic Institute, USA; 2Tsinghua University, China

O14_07 Compact Modeling Framework for Multigate SOI MOSFETs Based on Conformal 1805

Mapping Techniques

Udit Monga1'2, Dag-Martin Nilsen1, Jasmin Aghassi2, Josef Sedlmeir2, Tor A. Fjeldly11

Norwegian University of Science and Technology, and University Graduate Center (UNIK),

Norway; 2Infineon Technologies AG, Germany

O1408 An Improved Design of Si PNIN Tunneling Field Effect Transistor 1808

W. Cao, C. J. Yao, D. M. Huang, M.-F. Li


O14_09 The electronic structure of graphene nanomesh 1811

Qihang Guo, Jinyu Zhang, Yu He, Jiahao Kang, He Qian, Yan Wang, and Zhiping Yu


O14_10 A New Method for Scries Resistance Extraction in Poly-Si Thin-Film Transistors 1814

Yan Zhou1, Mingxiang Wang1, Man Wong2'Soochow University, China; 2Hong Kong Univ. of Science and Technology, Hong Kong

01411 Impact of Hump Effect on MOSFET Mismatch in the Sub-threshold Area for Low 1817

Power Analog Applications

Yohan Joly1'2, Laurent Lopez1, Jean-Michel Portal2, Hassen Aziza2, Yannick Bert1, Franck

Julien1, Pascal Fomara11

STMicroelectronics, France;21M2NP (UMR CNRS 6242), France

01412 Low Leakage Bulk Silicon Substrate Based SDOI FINFETs 1820

Jia Liu, Zhijiong Luo, Haizhou Yin, Huilong Zhu, Hefei Wang, Feng Yuan

institute of Microelectronics, Chinese Academy ofSciences, P. R. China

014_13 The Effects of Vacuum Spacer Transistors between High Performance and Low 1823

Stand-by Power Devices beyond 16nm

Jemin Park and Chenming Hu

Science University of California, Berkeley, USA

01414 Modeling of Terahertz Resonant Detection of MOS Field Effect Transistor Operating in 1826

All Regions under Optical Beating Mode

Jingxuan Zhu1'3, Zhifeng Yan''3, Yinglei Wang1'2'3, Xinnan Lin1'3' Jin He1'2'3, Wen Wu\

Zhiwei Liu3, Wenping Wang3, Yong Ma3, Juncheng Cao4

'Peking University Shenzhen Graduate School,, China; 2TSRC, Peking University, China;3PKU HKUST Shenzhen Institute, China;4 Shanghai Institute ofMicrosystems and

Information Technology, Chinese Academy of Sciences

01415 A Compact Model of Resistive Switching Devices 1829

B. Chen1,2, Q.Y.Jun2,B. Gao2, F.F. Zhang2, K.L. Wei2,Y.S. Chen2, L.F. Liu2, X.Y. Liu2, J.F.

Kang2, R.Q. Han2

'Peking University Shenzhen Graduate School, China;2Peking University, China,

01416 Theoretical Study on Geometry and Temperature Effects ofThermoelectric Properties 1832

of Si and Ge Nanowires

Wen Huang, Chee Shin Koong, and Gengchiau Liang

National University of Singapore, Singapore

014_18 A 5V/200V SOI Device with a Vertically Linear Graded Drift Region 1838

Shao-Ming Yang1, Yin-Huang Lin2, Gene Sheu1, Jung-Ruey Tasi', Shang-Hui Tu2, Yu-Lung

Chin2, Jin-Shyong Jan2 and Chia-Hao Lee2

'Asia University, Taiwan, China;2 Vanguard International Semiconductor Corp., Taiwan,

China

P14 01 Electrode design of coplanar-grid diamond film detectors by finite element method 1843

Qingkai Zeng, Xiaoyu Pan, Mei Bi, Xingmao Yan, Linjun Wang, Jian Huang, Ke Tang, Jijun

Zhang, Yiben Xia

Shanghai University, China

P14 02 A Bias Dependent Body Resistance Model for Deep Submicron PDSOl Technology 1844

Jianhui Bu', Jinshun Bi1, Mengxin Liu', Haogang Cai2' Zhengsheng Han'

'institute of Microelectronics of Chinese Academy and Sciences, China 2Columbia

University, USA

P14_03 A Device-Physics-Basic SPICE Model for PDSOI CMOS SEU 1847

Zihan Fan, Jinshun Bi, Jiajun Luo, Zhengsheng Han

The Institute of Microelectronics of Chinese Academy of Sciences, China

P14 04 A 2D Analytical Model of Bulk-silicon Triple RESURE Devices 1850

Tingting Hua', Yufeng Guo1, Gene Sheu21Nanjing University of Posts and Telecommunications,China; 2Asia University, Taiwan,

China

P1405 Computational analysis of GaAs/AIGaAs deposition in MOCVD vertical rotating disk 1853

reactor

Rui Chen, Jianjun Li, Xuan Ya, Jun Deng, Jun Han, Shaojun Luo, Lingchun Gao, Guang-di

Shen


P14_06 A Modified GP Large-Signal Model for InGaP/GaAs HBT and Direct Optimization 1856

Extraction Methodology

'Ying Zhang, 2Miao Li, 1 Yuxia Shi,'Li Zhang and lYanWang1Tsinghua University, China; 2Accelicon Technologies, Inc, China

PI 4 07 Simulation of Light Addressable Potentiometric Sensors based on MEDICI 1859

Yunfang Jia1, Lijun Ma1, Qiaoshan Chen1, Jiadai Liu1, Keli Xing2, Wencheng Niu1

'Nankai University, P. R. China; 2Tianjin Medical University, P. R. China

P14_08 Use ofAIGaN Launcher in Terahertz GaN Gunn Diode 1862

Chunli Yu, Linan Yang, Qingyang Yao, Qi Liu, Xuhu Zhang


P14 09 Modeling and Simulating for 3-D Micro-Manufacture Process 1865

Xu-Dongliang1, Zhang-Jian1'Hefei University of Technology ,

China

P14_10 Numerical simulation of 4H-SiC MESFETs with varied p-buffer layer thickness for 1868

microwave power device applications

Xiao-chuan Deng1, Bo Zhang1, Yi Wang', Zhao-ji Li11

University of Electronic Science and Technology of China, PR China

P1411 A Complete Stress Enhancement Model Development and Verification Platform for 1871

32nmTechnology and Beyond

Yanfeng Li1, Nengyong Zhu', Miao Li', Yanjun Wu1, Qiang Chen1, Shuang Cai1 Riko

Radojcic2, Mark Nakamoto2

'Accelicon Technologies, Inc, USA; 2Qualcomm 5775 Morehouse Drive San Diego, USA

P14_12 An improved computationally efficient drain current model for double-gate MOSFETs 1874

Xingye Zhou1'2, Jian Zhang', Zhize Zhou1, Lining Zhang', Chenyue Ma', Wen Wu3, Wei

Zhao3, and Xing Zhang1'1Peking University Shenzhen Graduate School, P. R. China;2 Peking University ,

P. R.

China;3PKU HK.UST Shenzhen Institute, P. R. China

P14_13 Bandstructures of Unstrained and Strained Silicon Nanowirc 1877

Lining Zhang1'2'3'4, Haijun Lou', Zhiwei Liu2, Frank He1'2,3, and Mansun Chan4

'Peking University Shenzhen Graduate School, China;2 Peking University Shenzhen SOC

Key Laboratory, China;3 TSRC, IME, Peking University, China; 4Hong Kong University

of Science and Technology

P1414 A Potential-based Analytic Model for Monocrystalline Silicon Thin-film Transistors on 1880

Glass Substrates

Shaodi Wang1'2, Lining Zhang2, Jian Zhang2, Wenping Wang2, Wen Wu2, Xukai Zhang1,Zhiwei Liu2, Wei Bian2, Frank He1'2 and Mansun Chan3'

PekingUniversity Shenzhen Graduate School, P. R. China;2 Peking University Shenzhen

SOC Key Laboratory, P. R. China; 3Hong Kong University of Science and Technology, Hong

Kong

P1415 An Analog CMOS Pulse Coupled Neural Network for Image Segmentation 1883

Ying Xiongl, Wei-Hua Han, Kai Zhao, Yan-Bo Zhang, Fu-Hua Yang'Chinese Academy of Science, China

P1416 An Accurate Compact Model with Skin and Proximity Effects for High 1886

Coupling-Coefficient Transformers

Hongda Zheng, Dajie Zeng, Dongxu Yang, Li Zhang, and Zhiping Yu


P1417 A Novel Hybrid-Anode AlGaN/GaN Field-Effect Rectifier with Low Operation Voltage 1889

Zhigang Wang, Bo Zhang, Wanjun Chen, Zhaoji Li

University of Electronic Science and Technology of China, China

P1418 OPNEC-Sim: An Efficient Simulation Tool for Network-on-Chip Communication and 1892

Energy Performance Analysis

Cai Jueping1, Huang Gang1, Wang Shaoli2, Yao Lei2, Li Zan2 and Hao Yue11Wide Bandgap Semiconductor Technology Disciplines State Key Laboratory, Xidian

University, China; 2State Key Laboratory of Integrated Services Networks, Xidian

University, China

P1419 Effective Behavioral Models for SA Fractional-N Frequency Synthesize Phase Noise 1895

Prediction

Wenfeng Lou, Xiaozhou Yan, Zhiqing Geng, (2)Zhihua Wang, (1>Nanjian Wu''Chinese Academy of Sciences, P. R. China; t2)Tsinghua University, China

P14 20 Design and Simulation of a High Resolution Ultrasonic Micro-Transducer Derived by 1898

LiNb03

Jin-ying Zhang1'2, Xin-ming Ji1, Wei-jiang Xu2, Julien Carlier2, Bertrand Nongaillard2,Yi-ping Huang''Fudan University, P. R. China;2 Universite de Valenciennes et du Hainaut Cambresis,

France

P14 21 Performance Optimization of n-MOSFETs Using Asymmetric Interfacial Oxide layer 1901

Weize Yu, Zhijiong Luo, Huilong Zhu, Qingqing Liang, and Haizhou Yin

Institute ofMicroelectronics of Chinese Academy of Sciences, P. R. China

P14 22 Current Modeling and Simulation of Dual-Material Surrounding-Gate MOSFET with 1904

Asymmetric Halo

Zun-Chao L', Jin-Peng Xu, and Lin-Lin Liu

Xi'an Jiaotong University, China

P14 23 LPCVD Process Simulation Based On Monte Carlo Method 1907

Jian-Yang Dai, Zai-Fa Zhou, Qing-An Huang, Wei-Hua Li


P14_24 A New Extraction Method for Source/Drain Resistance in MOSFETs 1910

Yang-Hua Chang, Yao-Jen Liu

National Yunlin University of Science & Technology, Taiwan, China

P14 25 Research on Modeling for the Pattern Library of Interconnect parasitic capacitances 1913

in VLSI

Hui Qu', Xiaoyu Xu1, and Zhuoxiang Ren2

'Chinese Academy of Sciences,China; 2UPMC University ofParis 6, France

P14 26 A High Speed Low Power Interface for Inter-die Communication 1916

Siliang Hua1, Qi Wang1,2, Hao Yan1,2, Donghui Wang1, Chaohuan Hou1

1Institute ofAcoustics, Chinese Academy of Sciences, China; 2Graduate University of

Chinese Academy ofSciences, China

P14 27 A Threshold Voltage Model for the Surrounding-Gate MOSFETs 1919

Guanghui Mei, Guangxi Hu, Peicheng Li, Jinglun Gu, Ran Liu and Tingao Tang


P1428 An Analytic Threshold Voltage Model for the Double-Gate Schottky-Barrier 1922

Source/Drain MOSFETs

Peicheng Li, Guangxi Hu, Guanghui Mei, Ran Liu, Yi Jiang and Tingao Tang


P14 29 A Simplified Simulation Model for CMOS Integrated Hall Devices Working at Low 1925

Magnetic Field Circumstance

Yue Xu, Fei-Fei Zhao

Nanjing University of Posts and Telecommunications, China

P1430 Design and Simulation of the vertical pnp transistor on SOI 1928

JieXin Luo1, Jing Chen, JianHua Zhou, QingQing Wu, XiaoLu Huang, Xi Wang

'Shanghai Institute of Microsystem and Information Technology, Chinese Academy of

Sciences, China

P14 31 Analytical models of the transition layer in HEMTs on silicon substrate for device 1931

simulation

Petru Andrei

Florida State University, USA

P14 32 Improved mobility model of MOSFETs for device simulation 1934

Wu Qingqing, Chen Jing, Wang Xi

Shanghai Institute ofMicrosystem and Information Technology, CAS, China

P14 33 On Dynamic Behavior of Triangular Shaped Cantilevers in MEMS Sensors: Effect of 1937

Curvature

Gui-Ming Zhang1, Li-Bo Zhao!'1' En-Ze Huang1, Guo-Ying Yuan', Yong Li2, Zhi-Gang Liu3

and Zhuang-De Jiang'1Xi'an Jiaotong University, China;2 Tsinghua University, China 3Xi'an Jiaotong University,

China

P14 34 Modeling Low Frequency Noise in PDSOI MOSFETs forAnalog and RFApplications 1940

S. Sirohi1 and S. Khandelwal'

'IBM Semiconductor Research & Development Centre, India

P14 35 Simple Approach for Statistical Modeling of Process Impacts on CMOS Device 1943

Variations in VLSI Applications

Meng Li, Qingqing Liang, Huicai Zhong, and Huilong Zhu

Institute of MicroElectronics of Chinese Academy of Sciences, China,

P14 36 Modeling the Parasitic Bipolar Device in the 40nm PD SOI NMOS Device Considering 1946

the Floating Body Effect

C. H. Chen, J. B. Kuo, D. Chen, and C. S. Yeh

National Taiwan University, Taiwan, China; UMC, Taiwan, China

P14_37 Evaluation the Layout Dependences on Strained 22nm NMOSFETs 1949

Jieyu Qin1,2, Gang Du2, Ruqi Han2, Xiaoyan Liu2

'Shenzhen Graduate School, Peking University, China; institute of Microelectronics, Peking

University, China

P14_38 Study of 20nm bulk F1NFET by Using 3D full band Monte Carlo Method with Effective 1952

Potential Quantum Correction

Gang Dul, Wei Zhang2, Juncheng Wang1, Tiao Lu2, Pingwen Zhang2, Xiaoyan Liu1

'institute of Microelectronics, Peking University, China; 2School of Mathematical Sciences,

LMAM and CAPT, Peking University, China

P14 39 Collision Based Capacitive Vibration Energy Harvesting 1955

Ling Bu, Xiaoming Wu, Lilian Liu


P14_40 Predictive Modeling of Capacitance and Resistance in Gate-all-around Cylindrical 1958

Nanowire MOSFETs for Parasitic Design Optimization

Qiumin Xu, Jibin Zou, Jieyin Luo, Runsheng Wang, Ru Huang


Packaging and testing technology

P1501 A Vacuum/airtight Package with Multifunctional LTCC Substrate and Integrated 1961

Pirani Vacuum Gauge for 3D SIP Integration Applications

Min Miao1'2, Hua Gan2'3, Yufeng Jin2, Zhensong Li1

'Beijing Information Science and Technology University, China; 2Peking University, China;

3Shenzhen Graduate School of Peking University, China

P15 02 Study on The Accelerated Soakage Testing during The Reliability Evaluation of Plastic 1964

Package

Qian Min'1, Yang Cuijun1, Yuan Hua1'2, Cao Yunpeng1Suzhou University, China

P15_04 Design and Implementation of a Differential PowerAnalysis System for Cryptographic 1967

Devices

Cong Chen, Xiangyu Li, Liji Wu, Xiangmin Zhang

Institute ofMicroelectronics ofTsinghua University, China

P1505 The implementation of the global scheduling strategy 1970

Jinyi Zhang1,3, Wanlin Cai2, Chunhua Wang31-3


P1506 Improved Delay Fault Coverage in SoC Using Controllable Multi-Scan-Enable 1973

Jin-yi ZHANG1'3, Xu-hui HUANG2, Wan-lin CAI2, Han-yi WENG1,31-3


PI 5_07 Automated Test Bitstream Generation for an SOI-Based FPGA 1976

Yan Li, Stanley L. Chen, Liang Chen, Qianli Zhang, Ming Li

Chinese Academy of Sciences, China

P1S_08 State-Space-based Uncertainty Analysis for Identification of Faulty Behaviour 1979

H J Kadim

LJMU, UK

Solar cell & other devices for new energy sources

117 01 Surface Texturing of Si thin film solar cells via Low Cost Periodic Nanopillars Array to 1982

Enhance Efficiency

(Invited) HongYu Yu

Nanyang Technological University, Singapore

117 02 High-efficiency silicon heterojunction solar cells: From physics to production lines 1986

(Invited) S. De Wolf1, Y. Andrault2, L. Barraud1, R. Bartlome1, D. Batzner2, P. Bole1, G. Choong',

B. Demaurex1, A. Descoeudres1, C. Guerin2, N. Holm2, M. Kobas2, D. Lachenal2, B.

Mendes2,B. Strahm2, M. Tesfai2, G. Wahli2, F. Wuensch2, F. Zicarelli1, A. Buechel2and

C. Ballif11Ecole Polytechnique Federate de Lausanne (EPFL), Institute of micro engineering (IMT),

Photovoltaics and thin film electronics laboratory, Switzerland;2 Roth & Rau Switzerland

(RRS), Switzerland

I17_03 Potential Application of Thin-film Nanotechnologies in Third-Generation Si Solar Cells 1990

(Invited) Jia-Min Shieh, Chang-Hong Shen, Ting-Jen Hsueh, Wen-Hsien Huang, Bau-Tong Dai, and

Fu-Liang Yang

'National Nano Device Laboratories, Taiwan, China

I17_04 Germanium-doped Crystal Silicon for solar cells 1994

(Invited) Deren Yang1, Xuegong Yu, Xiaoqiang Li, Peng Wang, Lei Wang

'Zhejiang University, China

P17 01 Influence of Measurement Parameter on Dye-sensitized Solar Cell Efficiency 1995

Hanmin Tian1'2, Xiangyan Wang1'3, Tao Yu1'3 and Zhigang Zou1'3

'Nanjing University, Nanjing 210093, P.R China; 2Hebei University ofTechnology, P.R.

China; 'National Laboratory of Solid State Microstructures, P.R. China

P17_02 Effect of the band gap ofthe window layer on the properties of silicon heterojunction 1998

solar cells

C. L. Zhong, R. H. Yao, K. W. Geng

South China University of Technology, China

P1703 Preparation of Solid Electrolyte PVDF on MoS2 in Silicon MCP for Three-Dimensional 2001

Li Ion Microbatteries

Huayan Zhang', Tao Liu, Fei Wang', Lianwei Wang1, Zhouguang Lu2, C.Y. Chung2, Paul K.

Chu21East China Normal University, Shanghai, 200241 P.R. China;2 City University of Hong

Kong, Hong Kong SAR, China

P17 04 Two low reflectance of triple-layer broadband antireflection coating for silicon solar 2004

cells

Chao Xiong, Ruohe Yao, Kuiwei Gen

South China University ofTechnology, China

P17_05 The Simulation of Photocurrent Properties of the Multi-layer Thin Film CdS/CdTe 2007

Solar Cell

Shanggong Feng1, Yanhu Chen1, Huijun Li1, Hongcai Wu2

'Shan Dong University, China;2 Xi'an JiaoTong University, China

P17_06 The optical properties of ZnO nanorod arrays prepared through hydrothermal 2010

synthesis for solar cell application

Rui Song, Dan Xie, Tianling Ren


P17_07 PECVD amorphous silicon suboxide films for surface passivation of silicon solar cells 2013

Guang-Zhi Jia, Hong-Gang Liu, Hu-Dong Chang

Chinese Academy of Sciences, China

P17_08 A physics-based drift-diffusion approach to model Li-air batteries with organic 2016

electrolyte

P. Andreil, J.P. Zheng1,2, M. Hendrickson3, and E.J. Plichta3

'Florida A&M University and Florida State University, USA; 2Center for Advanced Power

Systems, Florida State University, USA; 3U.S. Army CERDEC, USA

P17 09 Impacts of Process Parameters on CIGS Solar Cells Prepared by Selenization Process 2019

with Se Vapor

Chia-Hua Huang, Y. C. Shih, Wen-Jie Chuang, and Chun-Ping Lin

National Dong Hwa University, Taiwan, China

Other IC related technologies

P18_01 Loop Closure Variation Windows: Linking Manufacturing and Design 2022

Cong Gu1, Hong Chen1, Lisheng Li' and John Bates2,, Freescale Semiconductor Ltd.

1TSO Design Enable Group;

2Freescale Semiconductor Ltd., USA

P1802 A Novel Fault ResistantAlgorithm for Montgomery Multiplication 2025

Yan Ying-jian, Zhu Wei-wei, Duan Er-peng, Li Zhi-qiang

Information Engineering University, China

P18_03 Optimization video decoding for embedded systems using adaptive thread priority 2028

adjustment

Zhao Xueming

Marvell Technology Shanghai Ltd.

P18_04 A novel network on chip architecture - Stargon 2031

Xingxing Zhang, Zewen Shi, Heng Quan, Xiaoyang Zeng, Zhiyi Yu


P18_05 H.264 Parallel Decoder at HD Resolution on a Coarse-grained Reconfigurable 2034

Multi-media System

Wenjie Wang, Leibo Liu, Shouyi Yin, Min Zhu, Yansheng Wang, Shaojun Wei


P18_06 A Novel Application Data Coordinator for Mobile Computing Systems 2037

Wenping Zhu, Leibo Liu, Shouyi Yin, Eugene. Y. Tang, Jiqiang Song, Qian Huang, Shaojun

Wei


P18_08 A research of Dual-Port SRAM cell using 8T 2040

Kai-ji Zhang, Kun Chen,Wei-tao Pan, Pei-jun Ma


P18_09 The Design ofKa-band Slot Taylor Circular Arrays Antenna 2043

Wei Dai, Zongxi Tang,Biao Zhang and Shiwei Zhao

University of Electronic Science and Technology ofChina, China

P1810 A New Buried-Gate VMOSFET with Suppressed Overlap Capacitance and Improved 2046

Electrical Characteristics

Chih-Hao Kuo, Jyi-Tsong Lin, Yi-Chuen Eng, and Yi-Hsuan Fan


P1811 An efficient VLSI architecture and implementation of motion compensation for 2049

MPEG-4

Zhang Duoli, Ma Liang, Song Yukun, Du Gaoming, Jia Jinghua

Hefei University of Technology, China

P1812 An Energy Efficient Cluster Based node scheduling Protocol for Wireless Sensor 2053

Networks

"R.Saravanakumar, 2S.G.Susila, 3J.Raja.'Pavendar Bharathidasan College of Engg and Tech, India; 2Roever Engineering

College.Perambalur, India; 3Anna University Tiruchirappalli, India

P1813 A New Approach of ESD Protection for Millimeter Wave Transceivers 2058

Benjamin Zhong Ming Feng', Xu Zhang2'iKM Technology, Ottawa, Canada; 2Tianjin E RACE Technology, China

P18_14 Partial SOI Power LDMOS with a Variable Low-k Dielectric Buried Layer and a 2061

Buried P-Iayer

Xiaorong Luo, Yuangang Wang, Guoliang Yao, Lianfei Lei, Bo Zhang, Zhaoji Li

University ofElectronic Science and Technology of China, China

P18_15 A Novel CMOS Inverter Composed of a Junctionless NMOSFET and a Gated N-N-P+ 2064

Transistor for ULSI applications

Kuan-Yu Lu, Jyi-Tsong Lin, Hsuan-Hsu Chen, and Yi-Chuen Eng


P1816 Image Filtering Using Partially and Dynamically Reconfiguration 2067

Huaqiu Yang, Fanjiong Zhang, JinMei Lai, Yan Wang


P1817 Single Event Effects Resulted by parasitic structures of MOS transistors in SOI CMOS 2074

ICs and Their Hardness

Zhongli Liu1, Ru Huang2, Jiantou Gao1, Shoubin Xue2, and Fang Yu1

'institute of Semiconductors,CAS, China 2Peking University, China

Author Index

Integrated Technology (ICSICT 2010) · Wei-MingYang, Shu-Qing Duan,Yu-KeWang,QiangGuo,Wei-Ting...

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