Burger Kranzer 2009 Extreme High Efficiency PV Power Converters
Integrated Power Converters for high efficiency RF Systems
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1 Integrated Power Converters for Integrated Power Converters for high efficiency RF Systems high efficiency RF Systems By: Aaron Pereira Supervisor: Prof. Graham Town & Prof Neil Weste Department of Electronic Engineering Macquarie University, NSW, Australia.
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Integrated Power Converters for high efficiency RF Systems. By: Aaron Pereira Supervisor: Prof. Graham Town & Prof Neil Weste Department of Electronic Engineering Macquarie University, NSW, Australia. Outline. Introduction Background Solution Gallium Nitride Material & Devices - PowerPoint PPT Presentation
Transcript of Integrated Power Converters for high efficiency RF Systems
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Integrated Power Converters for high Integrated Power Converters for high efficiency RF Systemsefficiency RF Systems
By:Aaron Pereira
Supervisor:Prof. Graham Town & Prof Neil Weste
Department of Electronic Engineering
Macquarie University, NSW, Australia.
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Outline
• Introduction • Background• Solution• Gallium Nitride Material & Devices• PA + High Efficiency Modulator• Triquint 0.25u process & circuits designed• Further Work• Questions
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Introduction
MQ University Department of Electronics:ARC Linkage Grant
•Integrated Power converters for renewable energy systems •100MHz Envelope tracking system using GaN process for base station applications
•Using Triquint existing 0.25u GaN process, to design a high frequency, high efficiency modulator to be integrated into a Power Amplifier (HEPA) module for base stations applications.
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Background
RF Power Efficiency
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Quest for Power, Linearity & Efficiency
VDD
RL
BiasVout
Rs
Vs
Source
InputNetwork
Output Network
RF-in
PowerAmplifier Antenna
RF-out
Q
I
Edge Constellation:3pi/8, rotated 8-PSK
Schematic of PA
Actual Size
Stauth, Sanders, "Power supply rejection for RF amplifiers," (RFIC) Symposium, June 2006 Popovic,Zoya, “High efficiency microwave PA with dynamic power supplies”, ECEN 5014, Spring 2009, University of Colorado, Boulder
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Amplifier Classes- A, AB,B, C, D,E,F Conduction Angle, Efficiency
Niehenke,E, “GaN Power Amplifiers” Niehenke Consulting
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Non Linear PA v Linear PA’sCan’t do amplitude modulation Can- but highly inefficient
Stauth, Sanders, "Power supply rejection for RF amplifiers," (RFIC) Symposium, June 2006
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Average Efficiency
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Solution?Dynamic Power Supplies
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Solution- Research Objective
• HPA +Dynamic power supply MMIC• Use Triquint Semiconductor 0.25u GaN Process
to fabricate a monolithic solution.
MMIC Photo : Courtesy if Stephen Diebold, Karlshue Institute of Technology
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Gallium Nitride – Materials & Devices
RF & Power Electronics
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Properties of GaN
Niehenke,E, “GaN Power Amplifiers” Niehenke Consulting
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Anomalous Behaviour - Traps
Development of virtual gates wrecks havoc in device performance
Ventury, R. “PhD Thesis defence”, UCSB.
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Traps affecting FET performance
Kink effects IDS v VDS
Shift in Threshold VTH
RF Dispersion
ALBAHRANI,S.A , “ CHARACTERIZATION OF TRAPPING IN GALLIUM NITRIDE HEMTS”, PHD THESIS, MACQUARIE UNIVERSITY, AUSTRALIA 2011
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Device Engineering- Field Plates & Passivation
Niehenke,E, “GaN Power Amplifiers” Niehenke Consulting
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MQ- Arbitrary Pulsed Semiconductor Parameter Analyser System (APSPA)
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Pulsed I-V MeasurementsUnderstanding TQTX devices
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Pulsed I-V Measurement (Cont.)
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PA + High Efficiency Modulator
Design Options
TechnologyFCC regulationsCostModulation Schemes
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Power Amplifier Biasing
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Amplifier – Load-linesSwitching PA as Power Converters
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Demonstration of Class E amplifier Electrodeless Fluorescent Lamps
Demonstration of Resonant Inverter Circuit for Electrodeless Fluorescent Lamps Using High Voltage GaN-HEMT Wataru Saito*, Tomokazu Domon**, Ichiro Omura*, Tomohiro Nitta*, Yorito Kakiuchi*, Kunio Tsuda*** and Masakazu Yamaguchi* * Semiconductor Company, Toshiba Corp **Toshiba Business and Life Service ***R&D Center, Toshiba Corp1 Komukai Toshiba-cho, Saiwai-ku, Kawasaki 212-8583, Japan Phone: +81-44-549-2603, FAX: +81-44-549-2883, e-mail: [email protected]
13.56 MHz Class E Amplifier 620V/ 1.4 A GaN HEMT – 90% at 9W Output Power
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DC-DC Converter ArchitectureUsing switching PAs
DC-DC Converter fabricated using FET’s non-optimized for power conversion
Popovic,Zoya, “High efficiency microwave PA with dynamic power supplies”, ECEN 5014, Spring 2009, University of Colorado, Boulder
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PA and Modulator Integration Challenges – Power Supply Rejection Ratio (PSSR)
FCC has strict regulations regarding this.
Selection of filters and switching frequencies critical
Stauth, Sanders, "Power supply rejection for RF amplifiers," (RFIC) Symposium, June 2006
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Triquint 0.25u GaN Process & Circuit Designs
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Circuits Design- Ring Oscillators, inverters, tuned amplifiers
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Circuits Designed-MMIC LayoutRing Oscillators, Inverters, Tuned Amplifiers
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Further Work
• Switching PA’s E/F• Class AB PA (16 Weeks)• Filters for noise rejection (8 Weeks)• Integration (20-24 Weeks)• Thermal Issues (16 Weeks)• Testing (14 Weeks)
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Questions?
