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Innovative Technologies for Your Products

Japan Science and Technology Agency

Electronic

Device

Optical

Device

Material

Spin

Device

Energy

Sensor

Measurement

Equipment

Cryogenics

Selected Novel Technologiesfor Licensing

Water

・・・・SiNx - Passivated Single-Electron Transistors Having Top-Gate Electrodes

・・・・Energy Efficient Power Gating Architecture using NV-SRAM & NV-FF

・・・・Semiconductor Structure provided with AlON film on top of Ge layer

・・・・A micrometre-scale Raman silicon laser with a microwatt threshold

・・・・Novel Terahertz Polarizer for Extremely High Extinction Ratio

・・・・Barnacle mimetic - fascinating underwater adhesion

・・・・LUCID: A simple and versatile technique for tissue optical clearing

・・・・Advanced Polymer Materials via Sophisticated Structural Control

・・・・Highly Bright Mechanoluminescence Material

・・・・Commercialization Challenges in Graphene and Carbon Nanotube Fields

・・・・Spin Motor and Spin Rotary Member

・・・・Spin transistor utilizing Rashba SO interaction

・・・・ 3.8V Earth-Abundant Sodium Battery Electrode

・・・・ Thermochemical Fuel Production by Non-Stoichiometric Perovskites

・・・・High Performance Magnetic Coating

・・・・Infrared Detector of single-photon sensitivity

・・・・Radiation Detector using Low-Dimensional Semiconducting Scintillator

・・・・Measuring Properties of an object

with Acoustically Induced Electromagnetic Waves ( ASEM )

・・・・Helium Circulation System (HCS) for MEG

・・・・Safety Disinfection Technique by Plasma Treated Water

http://www.jst.go.jp/tt/EN/

Prof. Atsushi TAKAHARA ( Kyushu University )

Self-assembling motif (amyloid like structure)

2. Design of barnacle adhesive cement mimetics

4. Adhesion of various materials by gelation of aqueous solution of barnacle mimetic polymer solution

Anchoring to surface

Patent Licensing AvailablePatent No.: PCT/JP2014/068499

JST/ IP Management & Licensing Group Phone: +81-3-5214-8486, E-mail: [email protected]

1. Interesting Points in barnacle’s adhesion

Interaction unit

Self-assembling motif adopt “oligo-alanine” unit

10 wt% polymer sol. + WSC + HONSu + hexylamine

Cross-linking by amyloid structure

Surface interaction moieties

Anchoring to material surfacePolymer A

Polymer B

Gelation of polymer solution

load cell (1kN)cured at room temperature in humid air

contact area = 100 mm2

tensile tester

1.0 mm/min

24hours

stainless-steel plate polyethylene PMMA 6-nylon

anchor

EssenseSelf-assembling of polymer (cross-linking)Interaction with material surface

3. Mimetic of barnacle adhesive cement

n/m=1/12

n/m/l=1/1/10

10mm

10mm

1. No covalent bonding between protein (no catechol) crosslinking by molecular interaction

2. Cp-19k may interact with various surfaces

A new type of underwater adhesion was created in imitation of barnacle’s adhesion.


Dr. Hiroshi ONODERA (University of Tokyo, JST-CREST)

1. AbstractFor 3D-imaging of tissue structure, a simple and versatile method that turns organs transparent

benefits every biological research field. We present a new tissue clearing technique, LUCID (ilLUminate Cleared organs to IDentify target

molecules), which does not need a delipidation process or a special device. LUCID is a safe, simple, and versatile tool for 3D-visualization of target molecules in every research

field including cancer, bone diseases, joint diseases, leukemia, hematopoiesis, and drug discovery.

2. Procedure

3. LUCID-cleared organs (macroscopic and multiphoton microscopic images)

Patent Licensing AvailablePatent No. : WO2014/115206JST/ IP Management & Licensing Group : phone: +81-3-5214-8486, e-mail: [email protected]

1. Organs are simply immersed in Solution-1 (thiodiethanol+sucrose) for 0.5 to 1 day followed bySolution-2 (thiodiethanol + glycerol + non-ionic organic iodine compound) for 1 to 5 days.

(2) LUCID-cleared samples are observed with a multiphoton microscope. (3) Cleared samples can be further examined with routine histochemical analyses.

Tumor cells expressing EGFP (green) and blood vessels(DyLight594-bound Lycopersicon esculentum lectin, red) are visualized. Tumor structures are visualized to the limit of the working distance of our objective lens.

Uncleared LUCID-cleared

3 day-old rat pup headAdult rat muscle

Adult rat musclemultiphoton microscopySarcomere stripes in muscles are visible.

Inoculated lung tumor

Adult rat kidney

Adult rat brain (hippocampus) blood vessels

Adult EGFP transgenic rat hindlimb (knee joint). Femur and tibia bones become transparent and bone marrow (red color because of hemoglobin)is clearly visualized.

Renal cortexmultiphoton microscopy rendered imagered=blood vessel,green=renal tubuleblue=SHG (collagen fiber)

Comparison of cleaning ability between LUCID and Scale (rat brain sections)

Scale LUCID


1. What can be controlled by Living Radical Polymer (LRP) ?

Associate Prof. Atsushi GOTO (Kyoto University)

Micelle in water

Patent Licensing AvailablePatent No.: WO2008/139980, WO2009/136510, WO2010/027093, WO2010/140372, WO2011/016166, etc.

Kyoto University / Licensing Dept. Phone: +81-75-753-5529, E-mail: [email protected]

3. Applications of Well-Defined Polymers

Non-metal catalysts Inexpensive little-toxic catalysts

(a) Uniform chain length

(b) Chain-end functionality

(c) Copolymerization type

(d) Topology (shape)

2. Characteristics of LRP

Random (gradient)

Block

Surface grafting

BrushStar Comb

Concentrated polymer brushSi wafer

Water soluble (or soluble in solvent)

Water insoluble (or attaching to particle)

Drug

Drug delivery system

Block Copolymers

Phase separation

Micelles

LRP is a powerful tool for synthesizing well-defined polymers

Potential market

paints, pigments & coatingspersonal care & cosmeticsmedical materialsplastics, textiles & rubberInk jet media

Pigment dispersion in waterDainichiseika Color & Chemicals

Mfg. Co., Ltd

Prepared by LRP

monomer

alkyl iodide

organic catalyst

Vitamin E BHT

Bu3N

Bu4NI

Target Mn = 10,000

Target Mn = 20,000MMA

0 20 40 60 80 1000

2

4

6

8

10

12

14

Theoretical line

Mn /

100

0

conversion / %

1.0

1.1

1.2

1.3

1.4

1.5

Mw

/ M

n

Low polydispersity

Good control in Molecular Weight

Polydispersity index

Molecular weight

II

O OO O

O

O

I

II

O OO O

Si CH2 O C

O

C

CH3

CH3

I

EtO

EtO

EtO6

IHE

Fine dispersion of nano-objects

Phase separation

polystyrene

Poly(styrene/acrylonitrile)

Commercial Use

http://www.softicons.com/web-icons/bees-help-icons-by-artbees/green-capsule-ns-icon


1. Abstract

Chao-Nan Xu (National Institute of Advanced Industrial Science and Technology)

2. Structure of the Material

4. Application Example

The weak brightness and the attenuation of the light by the repetitive stress application were big issues, butthe following mechanoluminescence materials have solved such issues and the practical examinations have been carried out.

Materials:(1) xM1A1 (1-x)M2A2 (0<x<1)

M1,M2 = {Zn,Mn,Cd,Cu,Eu,Fe,Co,Ni,Mg,Ca}

A1,A2 = Chalcogen ={O, S, Te}

(2) SrAl2O4:Eu2+ (Stuffed Tridymite Type)

Patent Licensing AvailablePatent No. :USP7297295 EP1538190


3. Experiment, Data

Application of the compression load to the disk sample coated with a stress illuminant

Stress distribution image via the luminescence

Direct Visualization of the Stress Distribution by the Mechanoluminescence

■ xM1A1・(1-x)M2A2 : Mixture of { M1A1 :wurtzite} and { M2A2:zinc-blende }

wurtzite type zinc-blende type

+

A

M

Rubbing Rod –test machine Luminescence by the rubbing rod stimuli

0.99ZnCuS 0.01MnS

Visualization of the crack growth in the concrete floor board of the bridge by the stress detect mechanoluminescence sheets (SrAl2O4:Eu2+ ) http://www.jst.go.jp/kisoken/crest/research/s-houkoku/04_03.pdf (Japanese)

Image in 2010/116 months after setting.

Image in 2011/06

Compare the crack in a box with the same color and positon. Cracks became much clearer

in green box. New crack appeared in red box.

Load: 0.2N60 rpm

0.99ZnCuS 0.01MnS

Luminescence Intensity

2. New Fabrication Method of Large-area and Stable Continuous Graphene Film

Patent Licensing Available

Graphene Fab : WO2010/110153 and JP5578639, Metallic Probe Fab : WO2008/0657790JST/ IP Management & Licensing Group phone:+81-3-5214-8486 e-mail: [email protected]

1. Background

- By using the field emissions from a multi-walled carbon nanotube, which soften the bottom of the tungsten by Joule heating, and the coulomb attractions to the nanotube, which finely pulled off from the metal(i.e. tungsten) tip, an ultra sharp apex of metallic (i.e. tungsten) probe having 2nm distal end curvature radius is fabricated.- The ultra sharp apex metallic probe has excellent durability (mechanically strong) and low contact resistance and could contribute in the field of critical nano order measurements.

Patent: WO2008/0657790

3. Ultra Sharp Metallic Probe having 2nm distal end curvature radius

(Market Potential) Both Graphene and Carbon Nanotube (CNT) have great potentials for several next- generation devices, however no successful commercialization have been seen yet.

(Major Obstacles) Graphene - a lack of prominent fabrication methods of a large area and low cost graphene

Carbon Nanotube(CNT) - a lack of suitable applications and low cost fabrication methods


(Method I) This method easily synthesizes a large area graphene directly on the insulated substrate. Source gas of CH4 were decomposed and promoted to graphene growth on the substrate under the assistance of catalytic reaction with Ga vapor. The uniform coverage of the gallium vapor enables graphene growth not only on a flat surface but also on a rounded surface; like a front window of Auto, and eyeglasses.

(Applications examples)-The Large-area Graphene Film can be applied to the transparent resistor elements of the resistive-heat defoggers/demisters. The high thermal conductivity and optical transmittance of the Graphene could give a superior performance to the transparent resistor elements.-The Large-area and Stable Continuous Graphene Film can be applied to

the electrode pattern on heavy-duty/industrial use printed circuit boards i.e. LCD base circuit board, automobile electrical components.

(Method II)This method is to synthesize a graphene sheet at the interface between solid amorphous carbon and liquid gallium, which exhibits as a good graphitizing catalyst for a large area graphene sheet.Amorphous carbon film was transformed into graphite layer composed of a few layers of graphene sheet. This thin graphene film can be easily transferred into silicon substrate.

Crystal structure of the ultra sharp probe apex

Liquid Ga

SiO2 substrate

Graphene

a-Carbon film

Ga vapor

SiO2 substrate

Heater

Quartz reactor tube

Schematics of Ga vapor assisted graphene growth

MWNT embedded with

W probe

MWNT

W probe

0

0.2

0.4

0.6

0.8

1

0 50 100 150 200 250 300 350

G

D

2D

1500 2000 2500Wavenumber (cm-1)

Inte

nsity (a. u.)

CH4+ArGraphene

Production method of the ultra sharp probe

Em

issi

on c

urre

nt

Biasing voltage

Patent: WO2010/110153 Patent: JP5578639

flexible display

window defoggers

Prof. Jun-ichi FUJITA (University of Tsukuba)


Prof. Yutaka MAJIMA (Tokyo Institute of Technology)

2. SiNx-Passivated SET made by Au Nanoparticles and Nanogap Electrodes

Patent Licensing AvailablePatent No.: WO2013/129535


1. Abstract

3. Experimental Results

Single-electron transistors (SETs) have been expected towards highly integrated circuits. However uniform and stable device characteristics and the possibility of large area integration, including wiring are required for their real applications.SiNx-passivated chemically assembled SETs were developed. With an Au top-gate electrode, the SiNx-passivated SETs showed a clear Coulomb diamond, and the gate capacitance increased 16.5-fold.

Bottom-up processes that combine the use of synthesized Au nanoparticles (NPs), electroless plating, and self-assembled processes at a very small scale (< 5 nm) for chemically assembled SETs have been established.

The SiNx passivation layer was realized by catalytic chemical vapor deposition (CAT-CVD) up to a thickness of 50 nm, then top-gate electrodes were added.

SiNx-passivated SET with a top-gate electrodeCross-sectional image SEM image Equivalent circuit

Id-Vd characteristics at 9K Coulomb oscillation observation Stability diagram of the device at 9K

The use of the top-gate electrode allowed us to increase the gate capacitance 16.5-fold. The experimental Coulomb diamond corresponds to the ideal theoretical results.Au nanoparticle withstands the CAT-CVD process for SiNx passivation.

Circuit parameters of the SET

Initial gap electrodes by electron beam lithography (EBL)

Chemically synthesized Au nanoparticles with a core diameter of 6.2±0.8 nm were then chemisorbed using an alkanedithiol mixed self-assembled monolayer as an anchor.

Electroless gold plating Formation of octanethiol SAM

Insertion of decanedithiol molecules

Anchor molecules

Chemisorption of Au NPs

Si/SiO2 substrate

Chemically Synthesized Au NPs

Gold and Iodine tincture about 5 minutes dipping


Energy Efficient Power Gating Architecture using NV-SRAM & NV-FF

Associate Prof. Satoshi SUGAHARA (Tokyo Institute of Technology)

Circuit configuration

3. NV-SRAM operation for low power consumption

4. BET reduction architecture

Patent Licensing AvailablePatent No.: WO2013/172065, WO2013/172066


2. NV-SRAM consisting of Pseudo-Spin MOSFET

Simulated output characteristics of the PS-MOSFET

Low power operation of NV-SRAM combining with NVPG and Sleep mode

NV-SRAM cell

Schematic of NVPG processor/SoCusing NV-SRAM and NV-FF

Power domainLogic circuits on a chip are partitioned into several circuitry

domains. (power domains)The power domains are electrically separated from power-

supply lines and/or ground lines by sleep transistors. These domains can be shut down during standby mode

without losing their data by using NV-SRAM and NV-FF, and thereby highly energy-efficient power-gating can be achieved.

The static power is considerably reduced even during system run-time.

1. AbstractA new power-gating architecture using non-volatile SRAM (NV-SRAM) and non-volatile FF (NV-FF) circuits, called non-volatile power-gating(NVPG), was developed.Pseudo-Spin metal-oxide-semiconductor field effect transistors (PS-MOSFETs) are used in the non-volatile bi-stable memory circuits.The proposed NVPG architecture can dramatically reduce the energy issues caused by static power dissipation in advanced CMOS logic systems.

The spin-transfer torque magnetic tunnel junction (MTJ) is connected to the source of the MOSFET.The MTJ feeds back its voltage drop to the gate, and the degree of negative feedback depends on the resistance state of the MTJ.

BET (Break-Even Time): Power-shutdown time to compensate for the extra energy required to provide power gating.The standby power of NVPG is less than 50% of the conventional technology. By introducing a sleep mode, power consumption can be further reduced more than 50%.

In these NV-SRAM cell circuits, the MTJs can be electrically separated from the inverter loops by the PS-MOSFETs and thus have no degradation effects to fundamental circuits of the inverter loops.

0 0.2 0.4 0.6 0.8 10

0.5

1

rSD

Nor

mal

ized

ave

rage

pow

ercyc=10-3 sec,

rsleep= 0 to 1 in steps of 0.1

write bias controlVSR= 0.7VVCTRL= 0.4V

sleepVsupply= 0.9V

leakage controlVCTRL= 0.1V

ILSD= 0

Conventional technology(6T-SRAM)NVPG

Sleep Mode

NVPG : Sleep Mode Ratio

5. Application examples

BET is greatly reduced In the result, the energy reduction

efficiency is further improved.

The data in the bi-stable circuit is not stored in the NV- memory element (MTJ) when the data in the bi-stable circuit and the data in the NV-memory elements match.

This architecture which reduces the number of write into MTJ makes BET greatly reduced.

The energy consumption is also greatly reduced.

PS-MOSFET


2. Ge MOSFET: Expectation, and Problems to be Solved

Prof. Akira TORIUMI (University of Tokyo)

Ge MOS FET Structure

Gate Stack Ge-insulation film interface GeO2 -High-k Interface Problems: - Degrade carrier mobility - Less reliability - Variation increase

3. Scalable High-k/Ge Gate Stack Technology



0

0.5

1

1.5

2

-3 -2 -1 0 1 2

Vg[V]

C[μ

F/c

m2 ]

Au/3nm-AlON/p-Ge/Al

f=1MHz

○500oC

△600oC

●500oC

▲600oC

1 atm N2

50 atm N2

(a)

0

0.2

0.4

0.6

0.8

1

1.2

-3 -2 -1 0 1 2

Vg[V]

C/C

max

Au/AlON/p-Ge/Al

f=1MHz

◆24nm●3nm

50 atm N2

500oC 5min

GeON

AlON

Ge

AlON

Ge

AlON

Ge

High-pressure N2(HPN) (or Inert Gas)heat treatment

n-MOSFET p-MOSFET

Source Drainp-Ge n-Ge

MetalHigh-k

C-V Characteristics (a) and I-V Characteristics (b) C-V CharacteristicsAu/3nm-thick AlON/p-Ge(100)/Al MIS capacitors in APN and HPN PDA at 500 and 600 degree. Au/3nm-thick and 24nm-thick AlON/

p-Ge(100)/Al MIS capacitors in HPNPDA at 500degree for 5min.

By forming aluminum oxynitride on the Ge (Germanium) layer, high reliability thin film as the gate insulating film of MOSFET was realized. High-pressure inert gas post deposition annealing (PDA) using N2 or Ar gas dramatically improved the electrical properties of AlON/Ge MIS gate stacks.

1. Abstract

HPN PDA dramatically improves the C-V characteristics, whereas the large interface states were observed in the same gate stack as a result of atmospheric-pressure N2 (APN) post-deposition annealing.HPN PDA also reduces the gate leakage current.HPN PDA only improves the interface in the case of thin AlON/Ge.

Ge which has the higher carrier mobility, is a promising candidate as a channel material in the next generation of MOSFETs. In miniaturized MOSFETs, gate insulators with a high dielectric constant (high-k) are required in order to suppress the gate leakage current and the short channel effects.There is also a problem how good interface and insulating layer on Ge can be realized.

We investigated the use of aluminum oxynitride film (AlON) as a gate insulating film formed on the Ge substrate. By using an AlON film, a thin EOT (Equivalent Oxide Thickness) is possible.However, heat treatment of AlON film in order to improve the quality of the AlON film deteriorates the interface between Ge substrate and the AlON film.After examining the conditions under which the interface between the AlON film and the Ge substrate is not degraded by heat treatment, we tried to apply high-pressure N2 post-deposition annealing (HPN PDA) in order to suppress the N2

desorption, which was analogous to high-pressure oxidation (HPO) annealing in GeO2/Ge stack.


1. Silicon Raman Laser

Associate Prof. Yasushi TAKAHASHI(Osaka Prefecture University)

2. Principle of the Invention

4. Application Examples



3. Characteristics

Raman laser is the only silicon laser, but Currently proposed Si laser needs the improvement

miniaturization to micrometer dimensionsreduction of the threshold to microwatt powers

H. Rong et. al., Nature Photon. 1, 232 (2007).

Cavity size is order of “cm”

Threshold power is ~20mW

fp fs

Conduction band

Valence band

1.12eV

Γ X

Transition

Principle of Raman Scattering

γ = fp γ

γ - γphonon = fs

Specific energy to a material

IncidentPhoton

Raman Scattering

Conversion efficiency is rather low.

MirrorFilterStimulated

Raman Scattering

Medium withRaman Gain

PumpLaser

RamanLaser

Large cavity size is necessary for high Raman Gain.

Stimulated Raman Scattering with cavity

To utilize two types of nanocavity mode in hetero nanocavityTo fabricate the cavity along the [100] crystal direction

Photon is localized in a cavity with a volume, ~λ3

Q-value > 10x105 in Odd nanocavity mode 10x106 in Even nanocavity mode ∆ of frequencies is tunable by the air-hole radius

G[ ]: Raman gain in each direction

G[100] >> G[110] , then [100] is favorable

Both [100] & [110] devices are evaluated.

Chip size

[100] device

[110] devices

Threshold power : 1uW, 20,000 times smaller.Chip size is 10,000 times smaller.

Hetero nanocavity

Input - output characteristic

Y.Takahashi et.al., Nature vol.498 27 June 2013 p470-474

→ Laser with the current mode excitation is under development.

Example of silicon Raman laser

Realization of the convergence between photonics and electronics

Various industrial applications・ Inter-chip connection (Interposer)・ O/E interface inside the chip

http://www.petra-jp.org/pj_pecjs/en/index.html

Assistant Prof. Takehito SUZUKI (Ibaraki University)

0.5 1.0 1.510-2

10-1

100

-60

-50

-40

-30

-20

-10

0

Frequency (THz)

Ext

inctio

n ra

tio (d

B)

0.2

Tra

nsm

ission

pow

er

1.95

TM mode

Extinction ratio

0.5 1.0 1.5 2.0 2.5 3.00

20

40

60

80

100

-60

-50

-40

-30

-20

-10

0

Frequency (THz)

Ext

inctio

n ra

tio (d

B)

0.1

Tra

nsm

ission

pow

er (%

)

TM mode

Extinction ratio

0.5 1.0 1.5 2.0 2.510-2

10-1

100

-60

-50

-40

-30

-20

-10

0

Frequency (THz)

Ext

inctio

n ra

tio (d

B)

0.2

Tra

nsm

ission

pow

er

2.99

TM mode

Extinction ratio

2. Sophisticated structures to realize extremely high performance


Patent No. : JP5626740 PCT/JP2014/071866JST/ IP Management & Licensing Group phone:+81-3-5214-8486 e-mail: [email protected]

Conventional wire-grid polarizer

1. Background

GoIS I type laminated parallel plates

on a cyclo-olefin polymer film

GoIS II typehollow parallel plates

3. Innovation Achievements

・The polarizer is one of the key components in terahertz polarization sensitive measurements, which often gives fruitful information for terahertz technology innovations. ・The sophisticated design of a polarizer with both high extinction ratio and high transmission power is strongly required.

* The extinction ratio of conventional wire-grid polarizer is 10-2~10-4 (-20 dB~-40 dB), even though the transmission power is approximately 100%. The simultaneous pursuit of both is extremely cumbersome for conventional structures.

・Robust structures and low cost should be required for the market.


GoIS I type GoIS II type

Approximately -30 dB

(Amplitude of Electrical field is 87%.)

Approximately 76%

<-50 dB

(Amplitude of Electrical field is 91%.)

Approximately 83%

<-50 dB

・ The polarizers, GoIS I and GoIS II, have the sophisticated structures and realize both high extinction ratio below 10-5

(-50 dB) and transmission power of approximately 80%.・ Robust polarizers can be supplied to the market at much lower cost compared to the conventional wire-grid polarizers.

Approximately 98%

Conventional wire-grid polarizer

Mr. Yudai KishiGraduate

Multiple measurements One-time measurement

These measurements were performed by Dr. Masaya Nagai of Osaka University.

Analysis

GoIS I type


1. Novel Mechanism: Nano-Spin Motor

Prof. Atsufumi HIROHATA(York University)

2. Structure and Operation Principle

4. Potential Applications

Patent Licensing AvailablePatent No. : WO2014/024697


3. Simulation ( Now, under an demonstration stage)

Position of the Nano Spin motor

100

1

10

100

1

10

100

1

10

1 nm 10 nm 100 nm 1 m 10 m 100 m 1 mm 10 mm 100 mm

GHz

MHz

kHz

Hz

cyclopentane

F1-ATPase

Flagellar motor

Electromagnetic

PiezoelectricStatic

Max

Ro

tati

on

Sp

eed

[Hz]

Motor size [m]

MEMS / NEMS motors

Molecular motors

Conventional motors

Nano Spin MotorA magnetic moment in the ferromagnetic nano-disk rotates

by the spin-polarized current flowing from the non-magnetic material under the disk. High efficiency and high rotation frequency are expected.

Conventional This invention

Rotation Frequency Hz ~ KHz Hz ~ GHz

Device size 100 m ~ mm 100nm ~ m

Gate Electrode

Nano motor

Sourcecurrent

I –L

I +L

I –R

I +R

Nano Spin MotorV

All Metal Nano-Spin Motor

Nano Spin Motor

VNon Ferro magnet

Ferro magnet

Device made by Electron Beam Lithography

Operation (1)I –

RI +

R

Nano Spin Motor

VNon Ferro magnet

Ferro magnet

Spin Current

Operation (2)

Nano Spin Motor

VNon Ferro magnet

Ferromagnet

Operation (3)

I –L

I +L

Nano Spin Motor

VNon Ferro magnet

Ferromagnet

Operation (4)

Nano Spin Motor

VNon Ferro magnet

Ferromagnet

Operation (5)

Spin Current

Rotation images of the magnetic moment: Simulation has been executed by using the LLG equation.Left: model diagram Right: differential image of the magnetic domain

MEMS Nano MotorMachine

Spin Memory/Transistor

MagneticRecord

ElectronNano Oscillator

High Frequency device

Sensor

BiologyMedicine

OpticsChemistry Energy

GHz speed Motor Magneto-Optic Effect

Magnetic sensor

Molecular selection by centrifugal force

Local heating by magnetic fine

particles


1. The newly proposed spin transisitor Assistant Prof. Makoto KOHDA (Tohoku University)

A proposed Device Structure

3. Device Characteristics

Patent Licensing AvailablePatent No.: WO2013/027712(JP, US, EP, KR, CN)


No need for external B fields (Bex) and magnetic materialsSpin-Orbit Interaction :

Calculated effective magnetic field Beff along the y direction at

x = 106 nm.

Spin Polarization Mechanism Spin Rectification Mechanism

Spin Polarization at 0.5 (2e2/h) structure

2. Mechanism to induce Spin Polarization and Spin Rectification Effect

Spin Polarization induced by effective magnetic field Beff

(The inset shows an image of a QPC channel region taken by a SEM.)


1. Introduction

Prof. Emeritus Akihisa INOUE (Tohoku University)Prof. Emeritus Hiroyuki WAKIWAKA (Shinshu University)

a. Soft magnetic glassy metal having a basic formula of Fe-B-Nb is characterized by soft magnetic properties.

2. Key Features

3. Application Examples

Patent Licensing AvailablePatent No.: US7357844, US7906219B, WO2011/016399 (US, EU, JP, KR, CN, TW)


High performance magnetic coating is materialized by a series of patented technologies- soft magnetic glassy metal , coating of the glassy metal by thermal spraying and applications of the coating as torque sensors.

b. Coating by thermal spraying is designed specifically for keeping properties of the glassy metal by minimizing oxidation of the glassy metal.

c. Coating has good magnetostrictive properties and finds applications such as torque sensors.

Torque sensor

ou

tpu

t v

olt

age

(mV

)

Applied torque (N m)

exciting voltage : 25Vp-pexciting frequency : 5kHz

Dis

pla

cem

ent

Excited magnetic field

Conventionalthermal spraying

mixing glassy metal andits oxides

Supercooling liquid

minimized oxidation

Coating by thermal sprayingThermal spraying of

glassy metal

Coating by conventional process

Sensitivity improvementby glassy metal coating

Melt oxidation

High Velocity Plasma Spraying

Fe-B-Nb (Glassy metal)

Oxygen Concentration

Co

erci

ve F

orc

e

Coating of glassy metal by spraying

Liner displacementin ±15kA/m Minimized

variation at 0

Coatings

No Coatings


1. CSIP: Charge Sensitive Infrared Phototransistor

Prof. Emeritus Susumu KOMIYAMA Group (University of Tokyo)

Patent Licensing AvailablePatent No.: WO2010/137422, WO2010/137423


3. Tabletop ultrasensitive THz detector (jointly developed with UNISOKU)

THz waves

220mm

540mm

Pin-hole for

THz waves

Sensor CSIP (GaAs/AlGaAs quantum well crystals)Spectral Range 9 ~ 20 µm Operating temperatures 4 K (Helium free! Closed-cycle mechanical refrigerators)Quantum efficiency higher than 7% @ 15 µmMeasurement speed up to 100kHz Sensitivity 100fW ~ 100nW @ 1HzOutput format analog voltage (0 ~ 10V)Optical window 10 - ZnSe window, 125µm low temperature pinhole (option)

Specific detectivity D* of the detector ( a-STEP)Compared to conventional detectors . Thick solid line: theoretical limit of background limited values at 300K.

Spectrum of 15 m CSIP

2. Application: “passive”near-field spectroscope

50 mGaAs

Au

50 mGaAs

Au

GaAs

Au

10 m

*s-SNOM: Scattering-type Scanning Near-field Optical Microscope--Y. Kajihara, et al., Opt. Express 19, 7695-7704 (2011).

Opt. microscope Passive Far-field Passive Near-fieldCSIP (4.2 K)

Cryostat

W probe (modulation)Evanescent Wave

Sample

Ge objective

sharp metal probe

sample (300 K)

spontaneous evanescent wave

scattered photons

Required Specifications:1.Detector CSIP*2.Resolution Near-field microscope3.Remove background noises

Passive s-SNOM*

: 14.5 m

Resolution: 20 nm !E(r,t), B(r,t)

Metal ( < p)electrons Origin: Thermal charge fluctuation

S. Komiyama, IEEE J. Select. Topics. Quantum Elect. 17, 54 (2011).

Onephoton

Oneelectron

η: quantum efficiencyP: Radiation powerh : Photon energy

+_ e

Onephoton

1 0 6 10 1 0

electrons

Charge-sensitive device-e

-

+e-e

(escape to reservoir)

G = life

trans= 106~1010Photoconductive-gain

+-

Conventional photodiode CSIP

Photon counting

0 25 50 75 100

Condu

cta

nce (a.

u.)

Time (sec.)

Dark switching

0.00 0.05 0.10 0.151.0

0.8

0.6

0.4

0.2

0.0

-0.2

-0.4

-0.6

Tim e (s)

400fW350fW300fW250fW200fW150fW100fW50fWdark

Det

ecto

r cu

rren

t

Reset pulse (1sec duration)tR

Energy

Upper QW

Lower QW

Double quantum well

Intersubband transitionE1 − E0 = 84 meV (15μm)

E0

E1

Double QW structure

Basic configuration

S D

IG

CG RG

30μm

(AuGeNi)

(GaAs)

Microscope image

Novel detection scheme


Strategy to develop ideal scintillator:Conventional Scintillator:

Quantum Confinement Structure

Suppression of Thermal Quenching, realizes 1) High Scintillation Efficiency 2) Short decay time

Assistant Prof. Kengo SHIBUYA (University of Tokyo)

2. Suppression of Thermal Quenching by Quantum Confinement Structure

Thermal Quenching Processes Mechanism to suppress Thermal Quenching by quantum confinement structures

1. Low-Dimensional Semiconducting Scintillator

Lead-halide-based Perovskite-type Organic-Inorganic Hybrid Compounds with Quantum Well.

Inorganic:High Scintillation Efficiency (Favorable)

Relatively long decay time (Unfavorable)

Organic: Low Scintillation Efficiency

(Unfavorable) Short decay time

(Favorable)

3. Properties of the New Scintilator

New Scintillator:

Patent Licensing Available Patent No.: WO2002/056056 (JP, US, EP) JST/ IP Management & Licensing Group Phone: +81-3-5214-8486, E-mail: [email protected]


1. Novel ASEM method

Associate Prof. Kenji IKUSHIMA (Tokyo University of Agriculture and Technology)

2. Measurement Data

Patent Licensing AvailablePatent No.: WO2007/055057 (JP, US, EP)


Echo method

Conventional:Ultrasonic-pulse echo method

Mass density distribution

Elastic coefficient

Imaging of mechanical properties Imaging of Electromagnetic Properties

Novel : ASEM Acoustically Stimulated ElectroMagnetic Method

Ultrasonic oscillator

developed by K. Ikushima

Mechanical

Properties

Gallstone

Electromagnetic radiation is generated by temporal modulation of the magnetization or electric polarization via ultrasonic waves in a variety of materials.

. Application

Signal depends on coil coordination

ASEM Signal

Improvement:Large S/N ratio Shorter measurement time

Imaging of materials which electromagnetically responds via the ultrasonic wave. ( piezoelectric, magnetic materials which light doesn’t penetrate )

ASEM method

“For magnetic materials, non destructive hysteresis measurement is also possible.

ASEM images for magnetic(Fe and SrO/6Fe2O3) andnonmagnetic materials(Cu). Visualization of the stress inducedmagnetization in an iron foil before(b) and after folding. The newresidual stress is observed through the ASEM signals(the whiteLine in (c) ).

Sm: Strain Tn : Stress

We observe Vsig ,

Ultrasonic wave Tm Bj

+-+

+

-

-- +

--

+

Antenna

Object

10 MHz

No signals for Al(non magnetic)

(2) AM Modulation – ASEM Method (1) Pulse – ASEM Method

(a) Non destructive 2-D Magnetic Image (b) Non destructive Magnetic Tomographic Image

Ultrasonic Echo method


1. Helium Problems and MEG (Magnetoencepha ography)Prof. Emeritus Tsunehiro TAKEDA (University of Tokyo)

Cryogenics

3. HCS and MEG in Operation

Patent Licensing AvailablePatent No.: WO2000/039513, WO2004/070296 , WO2004/110269


A: pipe to lead LHe (to cool SQUIDs) from condenser to dewar by gravity B: pipe to lead lower temperature (4K) HeG from dewar to condenserC: pipe to circulate higher temperature (40K) HeG (to cool the dewar) D: pipe to add pure HeGEV: electric valveMFC: mass flow controllerLine B A

The condenser absorbs low temperature gas and liquefies it without raising it up to the room temperature (300K).Line D C

40K HeG is flowed into the neck tube of the dewar to cool it.

BEFORE HCS installation (b)AFTER HCS installation

MEG problems Large amount of expensive He required

(8 - 10l/day) Frequent liquid He refilling required

(2 times/week)

Required specifications for the HCS for the MEGLiquid He circulation: 10l/dayContinuous Operation: 1 year or moreNo blocking by contaminants (H2O, N2, O2)No incremental noise

(acoustic/ magnetic) added by HCS

Basic idea of the new HCS

Block diagram of the gas flow

Noise amplitude spectra of selected 10 channels of the system

Gas control system of the HCS(b)Computerr

Multi-pipe TT of the HCSinstalled on the commercialized MEG

4. Applications in other fields1)MRI 2)Low temperature science This system is already commercialized by

Frontier Technology Institute Inc. (JAPAN)

1) 4K HeG : naturally circulated by liquefaction in the condenser2) 40K HeG (to cool dewar) : circulated by a pumpRefiner with heater is introduced to prevent blocking by

contaminants (H2O, N2, O2).Trapped contaminants are automatically exhausted after

evaporated by the heater.Transfer tube : a newly developed seven concentric TT to

reduce the amount of heat flowing into the system

Current Status of Helium production and consumption (excerpt from Nature, 31 May 2012, Vol 485)

Advantages:1)Helium consumption: reduced to 1/200 of conventional systems.2)Operation cost: less than 1/10 of conventional systems.3)Incremental noise: no noticeable noise added by HCS

2. Newly developed Helium Circulation System

1. Novel Na2Fe2(SO4)3 Electrode

We discovered a novel cathode Na2Fe2(SO4)3 for rare-metal-free Na-ion rechargeable battery.Na2Fe2(SO4)3 cathode shows the highest-ever Fe3+/Fe2+ redox potential at 3.8 V (versus Na) with

more than 100mAh/g.Na2Fe2(SO4)3 has a fast (liquid-like) Na transport channel during the charge-discharge reaction.

Patent Licensing AvailablePatent No. : PCT/JP2014/073162JST/ IP Management & Licensing Group Phone:+81-3-5214-8486, e-mail: [email protected]

2. Electrode Properties of Na2Fe2(SO4)3 in Na Cell

Overall comparison of the Fe-based cathode materials in Na-ion battery systemNa2Fe2(SO4)3 provides ;redox potential : 3.8V (versus Na/Na+)

current density 100mAh/genergy density 400Wh/kg

(theoretical 540Wh/kg)The theoretical capacity is higher than those of Li cathodes for present Li battery system. It is a entirely new composition and structure with the first alluaudite-type sulphate framework.

Galvanostatic charging and discharging profiles of Na2-xFe2(SO4)3 cathode cycled between 2.0 and 4.5V at 25The initial capacity of 102 mAh/g (theoretical 120mAh/g) is highly reversible over 30 cyclesunder various current rates C/20(2Na in 20h) to 20C(2Na in 3min).


3. Na-ion Diffudion in Na2Fe2(SO4)3

Ea=0.14ev

Ea=0.27ev

Ab initio calculations show very low activation energies for Na-ion migration within Na3 channel (Ea=0.14eV; Liquid-like) and Na2 channel(Ea=0.27eV).These Na channels show very fast charge-discharge kinetics, and the continuous space of Na3 site acts as a faster Na transport channel.

FeO6 SO4

Prof. Atuo YAMADA (University of Tokyo)


1. Thermochemical fuel production

Thermochemical Fuel Productionby Non-Stoichiometric Perovskites

Prof. Yoshihiro YAMAZAKI (Kyushu University)

2. Mechanism of Thermochemical Fuel Production

Mechanism of water-splitting- Flexible structure

Porous Oxide Structures

- Large amount of oxygen vacancy

Fast oxygen ion diffusion

Basic Structures

Solar Concentrator

3. Performance of water-splitting

1st step reactionHigh-temperature Reduction Step

O2 EmissionABO3±δ ABO3±δ α (α/2)O2

2nd step reactionLow-temperature Oxidation StepH2 Generation Reaction

ABO3±δ α αH2O ABO3±δ αH2CH4 Generation Reaction

ABO3±δ α (α/4)CO2 (α/2)H2O ABO3±δ α/4 CH4CO Generation Reaction

ABO3±δ α αCO2 ABO±δ αCOSyngas(CO+H2 Generation Reaction

2ABO3±δ α αH2O α CO2 2 ABO3±δ + αH2 + αCOVarious Fuel Gas Generation

Full solar spectrum usage (using sunlight as heat instead of

optical wave)

Total ReactionWater-Splitting Reaction

αH2O αH2 (α/2)O2 α/4 CO2 (α/2)H2O (α/4)CH4 (α/2)O2

αCO2 αCO (α/2)O2 αH2O αCO2 αH2 αCO (α/2)O2

No Precious Metal RequiredA: Alcali metals, Alkaline earth metals, Rare earth metals B: Transition metals, Metalloids

No H2/O2 separation required because the reaction is divided into 2 step reaction.

Patent Licensing AvailablePatent No.: WO2013/141385 (JP, US, EP, KR, CN) (JST, Caltech)


ABO3±δ α αH2O ABO3±δ αH2

Associate Prof. K. KITANO (Osaka University)

1. Plasma Jet System

2. Physicochemical Property of Plasma Treated Water (PTW) with the Reduced pH

Patent No. : WO2008/072390,WO2009/041049 JST : Phone:+81-3-5214-8486, e-mail: [email protected]

Osaka Univ. : Phone:+81-6-6879-4862, e-mail: [email protected]

We have developed a handy type, low cost & safety plasma jet system.Exposure to plasma jet and plasma treated water with the reduced pH is significantly effective to kill bacteria of human body.The plasma jet system will contribute to plasma medicine as well as plasma sterilization.

A schematic diagram of a low-frequency plasma jet generation system A plasma is generated in a He gas flowing in the glass tube when LF/HV pulses are applied to a single electrode around the tube.

LF=10kHz, HV=5 10kV Discharge power : a few watts.

( Handy type $10 )

100

101

102

103

104

105

106

107

via

ble

bacte

ria c

ou

nt

(CF

U/m

l)

1801501209060300

plasma exposure time [sec.]

pH6.5

pH6.5

pH5.3

pH4.7

pH3.8

detection limit

D>1100sec.

D=28sec.

D=16sec.

D=4.8sec.

Reducing pH 4.7 strengthens the bactericidal activity drastically.

MechanismPlasma generate (superoxide anion radicals).When pH is <4.8, is changed to (hydroperoxy radicals) by acid dissociation,

and directly interact with bacterial cells to inactivate them.The presence of is essential for the bacterial inactivation.

O2-•

O2-•

pKa = 4.8

HOO•

He plasma

Water solution

O2-•

air

H+

HOO• O2

-•

3. Bactericidal Activity of Plasma Treated Water

The activity can be preserved for a month by freezing. Safety indirect plasma disinfection will be brought by the combination of the plasma treated water and the reduced pH.

8

7

6

5

4

3

2

1

0

log 1

0 re

duct

ion

403020100

incubation time of the plasma treated water [day]

-18 degree C

-30 degree C

-85 degree C

7

6

5

4

3

2

1

bac

teri

a co

un

t [l

og

10(C

FU

/ml)

]

0.01 0.1 1 10 100

dillution ratio [%]

pH 3.5

pH 6.5

Bactericidal Activity of diluted PTW

E. coli (vegetative)

detection limit

E.coli suspension D value = 1 log reduction time

PTW has extremely strong bactericidal activity



Japan Science and Technology AgencyCenter for Intellectual Property Strategies5-3, Yonbancho, Chiyoda-ku, Tokyo, 102-8666 JAPAN

phone : +81-3-5214-8486

fax : +81-3-5214-8417

e-mail : [email protected]

URL : http://www.jst.go.jp/tt/EN/

http://www.jst.go.jp/tt/EN/mrs2014.html

About JST

The Japan Science and Technology Agency (JST) is one of the core institutions

responsible for the implementation of science and technology policy in Japan, including

the government’s Science and Technology Basic Plan. From knowledge creation—the

wellspring of innovation—to ensuring that the fruits of research are shared with society

and Japan’s citizens, JST undertakes its mission in a comprehensive manner. JST also

works to provide a sound infrastructure of science and technology information and raise

awareness and understanding of science and technology-related issues in Japan.

Mission :

We contribute to the creation of innovation in science and technology as the core

implementing agency of the fourth phase of the Science and Technology Basic Plan.

Visions :

1.To achieve innovation in science and technology through creative research and

development.

2.To maximize research outcomes by managing research resources on the virtual

network.

3.To develop the nation’s infrastructure for science and technology to accelerate

innovation in science and technology.

http://www.jst.go.jp/EN/about/index.html

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