Infineon Robust WiFi SiGe BFP842ESD Rev. 1 · 2019-10-12 · PRIMECELL™, REALVIEW™, THUMB™,...
Transcript of Infineon Robust WiFi SiGe BFP842ESD Rev. 1 · 2019-10-12 · PRIMECELL™, REALVIEW™, THUMB™,...
RF & Protect ion Devices
Data Sheet Revision 1.1, 2013-04-11
BFP842ESDRobust Low Noise Silicon Germanium Bipolar RF Transistor
Edition 2013-04-11Published byInfineon Technologies AG81726 Munich, Germany© 2013 Infineon Technologies AGAll Rights Reserved.
Legal DisclaimerThe information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights of any third party.
InformationFor further information on technology, delivery terms and conditions and prices, please contact the nearest Infineon Technologies Office (www.infineon.com).
WarningsDue to technical requirements, components may contain dangerous substances. For information on the types in question, please contact the nearest Infineon Technologies Office.Infineon Technologies components may be used in life-support devices or systems only with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered.
BFP842ESD
Data Sheet 3 Revision 1.1, 2013-04-11
Trademarks of Infineon Technologies AGAURIX™, C166™, CanPAK™, CIPOS™, CIPURSE™, EconoPACK™, CoolMOS™, CoolSET™,CORECONTROL™, CROSSAVE™, DAVE™, DI-POL™, EasyPIM™, EconoBRIDGE™, EconoDUAL™,EconoPIM™, EconoPACK™, EiceDRIVER™, eupec™, FCOS™, HITFET™, HybridPACK™, I²RF™,ISOFACE™, IsoPACK™, MIPAQ™, ModSTACK™, my-d™, NovalithIC™, OptiMOS™, ORIGA™,POWERCODE™; PRIMARION™, PrimePACK™, PrimeSTACK™, PRO-SIL™, PROFET™, RASIC™,ReverSave™, SatRIC™, SIEGET™, SINDRION™, SIPMOS™, SmartLEWIS™, SOLID FLASH™, TEMPFET™,thinQ!™, TRENCHSTOP™, TriCore™.
Other TrademarksAdvance Design System™ (ADS) of Agilent Technologies, AMBA™, ARM™, MULTI-ICE™, KEIL™,PRIMECELL™, REALVIEW™, THUMB™, µVision™ of ARM Limited, UK. AUTOSAR™ is licensed by AUTOSARdevelopment partnership. Bluetooth™ of Bluetooth SIG Inc. CAT-iq™ of DECT Forum. COLOSSUS™,FirstGPS™ of Trimble Navigation Ltd. EMV™ of EMVCo, LLC (Visa Holdings Inc.). EPCOS™ of Epcos AG.FLEXGO™ of Microsoft Corporation. FlexRay™ is licensed by FlexRay Consortium. HYPERTERMINAL™ ofHilgraeve Incorporated. IEC™ of Commission Electrotechnique Internationale. IrDA™ of Infrared DataAssociation Corporation. ISO™ of INTERNATIONAL ORGANIZATION FOR STANDARDIZATION. MATLAB™ ofMathWorks, Inc. MAXIM™ of Maxim Integrated Products, Inc. MICROTEC™, NUCLEUS™ of Mentor GraphicsCorporation. MIPI™ of MIPI Alliance, Inc. MIPS™ of MIPS Technologies, Inc., USA. muRata™ of MURATAMANUFACTURING CO., MICROWAVE OFFICE™ (MWO) of Applied Wave Research Inc., OmniVision™ ofOmniVision Technologies, Inc. Openwave™ Openwave Systems Inc. RED HAT™ Red Hat, Inc. RFMD™ RFMicro Devices, Inc. SIRIUS™ of Sirius Satellite Radio Inc. SOLARIS™ of Sun Microsystems, Inc. SPANSION™of Spansion LLC Ltd. Symbian™ of Symbian Software Limited. TAIYO YUDEN™ of Taiyo Yuden Co.TEAKLITE™ of CEVA, Inc. TEKTRONIX™ of Tektronix Inc. TOKO™ of TOKO KABUSHIKI KAISHA TA. UNIX™of X/Open Company Limited. VERILOG™, PALLADIUM™ of Cadence Design Systems, Inc. VLYNQ™ of TexasInstruments Incorporated. VXWORKS™, WIND RIVER™ of WIND RIVER SYSTEMS, INC. ZETEX™ of DiodesZetex Limited.Last Trademarks Update 2011-11-11
BFP842ESD, Robust Low Noise Silicon Germanium Bipolar RF Transistor Revision History: 2013-04-11, Revision 1.1
Page Subjects (major changes since last revision)This data sheet replaces the revision from 2012-08-03.
P. 8 Item about AEC-Q101 added to feature list, minor changes.P. 27 Picture for marking description updated.
BFP842ESD
Table of Contents
Data Sheet 4 Revision 1.1, 2013-04-11
Table of Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
List of Figures . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
List of Tables . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
1 Product Brief . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7
2 Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8
3 Maximum Ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
4 Thermal Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
5 Electrical Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 115.1 DC Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 115.2 General AC Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 115.3 Frequency Dependent AC Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 125.4 Characteristic DC Diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 155.5 Characteristic AC Diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18
6 Simulation Data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 26
7 Package Information SOT343 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 27
Table of Contents
BFP842ESD
List of Figures
Data Sheet 5 Revision 1.1, 2013-04-11
Figure 4-1 Total Power Dissipation Ptot = f (TS). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10Figure 5-1 BFP842ESD Testing Circuit . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12Figure 5-2 Collector Current vs. Collector Emitter Voltage IC = f (VCE), IB = Parameter . . . . . . . . . . . . . . . . . 15Figure 5-3 DC Current Gain hFE = f (IC), VCE = 2.5 V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15Figure 5-4 Collector Current vs. Base Emitter Forward Voltage IC = f (VBE), VCE = 2.5 V . . . . . . . . . . . . . . . . 16Figure 5-5 Base Current vs. Base Emitter Forward Voltage IB = f (VBE), VCE = 2.5 V . . . . . . . . . . . . . . . . . . . 16Figure 5-6 Base Current vs. Base Emitter Reverse Voltage IB = f (VEB), VCE = 2.5 V . . . . . . . . . . . . . . . . . . . 17Figure 5-7 Transition Frequency fT = f (IC), f = 1 GHz, VCE = Parameter. . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18Figure 5-8 3rd Order Intercept Point at output OIP3 = f (IC), ZS = ZL = 50 Ω, VCE, f = Parameters . . . . . . . . . 18Figure 5-9 3rd Order Intercept Point at output OIP3 [dBm] = f (IC, VCE), ZS = ZL = 50 Ω, f = 3.5 GHz . . . . . . 19Figure 5-10 Compression Point at output OP1dB [dBm] = f (IC, VCE), ZS = ZL = 50 Ω, f = 3.5 GHz . . . . . . . . . . 19Figure 5-11 Collector Base Capacitance CCB = f (VCB), f = 1 MHz . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20Figure 5-12 Gain Gma,Gms, |S21|2 = f (f), VCE = 2.5 V, IC = 15 mA. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20Figure 5-13 Maximum Power Gain Gmax = f (IC), VCE = 2.5 V, f = Parameter in GHz . . . . . . . . . . . . . . . . . . . . 21Figure 5-14 Maximum Power Gain Gmax = f (VCE), IC = 15 mA, f = Parameter in GHz . . . . . . . . . . . . . . . . . . . 21Figure 5-15 Input Reflection Coefficient S11 = f (f), VCE = 2.5 V, IC = 5 / 15 mA . . . . . . . . . . . . . . . . . . . . . . . . 22Figure 5-16 Source Impedance for Minimum Noise Figure Zopt = f (f), VCE = 2.5 V, IC = 5 / 10 / 15 mA . . . . . . 22Figure 5-17 Input Reflection Coefficient S11 = f (f), VCE = 2.5 V, IC = 5 / 15 mA . . . . . . . . . . . . . . . . . . . . . . . . 23Figure 5-18 Output Reflection Coefficient S22 = f (f), VCE = 2.5 V, IC = 5 / 15 mA . . . . . . . . . . . . . . . . . . . . . . . 23Figure 5-19 Noise Figure NFmin = f (f), VCE = 2.5 V, IC = 5 / 10 / 15 mA, ZS = Zopt . . . . . . . . . . . . . . . . . . . . . . 24Figure 5-20 Noise Figure NFmin = f (IC), VCE = 2.5 V, ZS = Zopt, f = Parameter in GHz . . . . . . . . . . . . . . . . . . . 24Figure 5-21 Noise Figure NF50 = f (IC), VCE = 2.5 V, ZS = 50 Ω, f = Parameter in GHz . . . . . . . . . . . . . . . . . . . 25Figure 7-1 Package Outline . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 27Figure 7-2 Package Footprint. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 27Figure 7-3 Marking Description (Marking BFP842ESD: T9s) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 27Figure 7-4 Tape dimensions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 27
List of Figures
BFP842ESD
List of Tables
Data Sheet 6 Revision 1.1, 2013-04-11
Table 3-1 Maximum Ratings at TA = 25 °C (unless otherwise specified) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9Table 4-1 Thermal Resistance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10Table 5-1 DC Characteristics at TA = 25 °C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11Table 5-2 General AC Characteristics at TA = 25 °C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11Table 5-3 AC Characteristics, VCE = 2.5 V, f = 0.45 GHz . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12Table 5-4 AC Characteristics, VCE = 2.5 V, f = 0.9 GHz . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13Table 5-5 AC Characteristics, VCE = 2.5 V, f = 1.5 GHz . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13Table 5-6 AC Characteristics, VCE = 2.5 V, f = 1.9 GHz . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13Table 5-7 AC Characteristics, VCE = 2.5 V, f = 2.4 GHz . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14Table 5-8 AC Characteristics, VCE = 2.5 V, f = 3.5 GHz . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14Table 5-9 AC Characteristics, VCE = 2.5 V, f = 5.5 GHz . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
List of Tables
BFP842ESD
Product Brief
Data Sheet 7 Revision 1.1, 2013-04-11
1 Product Brief
The BFP842ESD is a high performance HBT (Heterojunction Bipolar Transistor) specifically designed for 2.3 - 3.5GHz LNA applications. The device is based upon the reliable high volume SiGe:C technology of Infineon.The BFP842ESD provides inherently good input power match as well as inherently good noise match between2.3 and 3.5 GHz. The simultaneous noise and power match without lossy external matching components at theinput leads to a low external parts count, to a very good noise figure and to a high transducer gain in theapplication. Integrated protection elements at in- and output make the device robust against ESD and excessiveRF input power.The device offers its high performance at low current and voltage and is especially well-suited for portable battery-powered applications in which energy efficiency is a key requirement. The device comes in an easy to use industrystandard package with visible leads.
BFP842ESD
Features
Data Sheet 8 Revision 1.1, 2013-04-11
2 Features
Applications
As very low noise amplifier (LNA) in• Mobile and fixed connectivity applications: WLAN 802.11b/g/n, WiMAX 2.5/3.5 GHz, Bluetooth• Satellite communication systems: GNSS Navigation systems (GPS, GLONASS, COMPASS/Beidu/Galileo)
Satellite radio (SDARs, DAB and C-band LNB)and C-band LNB (1st and 2nd stage LNA)
• Multimedia applications such as mobile/portable TV, Mobile TV, FM Radio• 3G/4G UMTS/LTE mobile phone applications• ISM applications like RKE, AMR and Zigbee
As discrete active mixer, buffer amplifier in VCOs
Attention: ESD (Electrostatic discharge) sensitive device, observe handling precautions
• Robust very low noise amplifier based on Infineon´s reliable, high volume SiGe:C technology
• Unique combination of high-end RF performance and robustness:16 dBm maximum RF input power, 1 kV HBM ESD hardness
• High linearity OIP3 = 25.5 dBm at 3.5 GHz, 2.5 V, 15 mA• High transition frequency fT = 60 GHz enables very low noise
figure at high frequencies: NFmin = 0.65 dB at 3.5 GHz, 2.5 V, 5 mA• Transducer gain |S21|2 = 16 dB @ 3.5 GHz, 2.5 V, 15 mA• Ideal for low voltage applications e.g. VCC = 1.8 V and 2.85 V
(3.3 V, 3.6 V requires corresponding collector resistor)• Low power consumption, ideal for mobile applications• Easy to use Pb free (RoHS compliant) and halogen free industry
standard package with visible leads• Qualification report according to AEC-Q101 available
SOT343
Product Name Package Pin Configuration MarkingBFP842ESD SOT343 1 = B 2 = E 3 = C 4 = E T9s
12
34
BFP842ESD
Maximum Ratings
Data Sheet 9 Revision 1.1, 2013-04-11
3 Maximum Ratings
Attention: Stresses above the max. values listed here may cause permanent damage to the device. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. Maximum ratings are absolute ratings; exceeding only one of these values may cause irreversible damage to the integrated circuit.
Table 3-1 Maximum Ratings at TA = 25 °C (unless otherwise specified)Parameter Symbol Values Unit Note / Test Condition
Min. Max.Collector emitter voltage VCEO – 3.25
2.9V TA = 25 °C
TA = -40 °C Open base
Collector emitter voltage1)
1) VCES is identical to VCEO due to design
VCES – 3.252.9
V TA = 25 °CTA = -40 °CE-B short circuited
Collector base voltage2)
2) VCBO is similar to VCEO due to design
VCBO – 4.13.5
V TA = 25 °CTA = -40 °COpen emitter
Base current IB -5 3 mACollector current IC – 40 mARF input power PRFin – 16 dBmESD stress pulse VESD -1 1 kV HBM, all pins, acc. to
JESD22-A114Total power dissipation3)
3) TS is the soldering point temperature. TS is measured on the emitter lead at the soldering point of the pcb.
Ptot – 120 mW TS ≤ 111°CJunction temperature TJ – 150Storage temperature TStg -55 150 °C
BFP842ESD
Thermal Characteristics
Data Sheet 10 Revision 1.1, 2013-04-11
4 Thermal Characteristics
Figure 4-1 Total Power Dissipation Ptot = f (TS)
Table 4-1 Thermal ResistanceParameter Symbol Values Unit Note / Test Condition
Min. Typ. Max.Junction - soldering point1)
1) For the definition of RthJS please refer to Application Note AN077 (Thermal Resistance Calculation)RthJS 324 K/W
0 25 50 75 100 125 1500
20
40
60
80
100
120
140
TS [°C]
Pto
t [mW
]
BFP842ESD
Electrical Characteristics
Data Sheet 11 Revision 1.1, 2013-04-11
5 Electrical Characteristics
5.1 DC Characteristics
5.2 General AC Characteristics
Table 5-1 DC Characteristics at TA = 25 °C Parameter Symbol Values Unit Note / Test Condition
Min. Typ. Max.Collector emitter breakdown voltage V(BR)CEO 3.25 3.7 V IC = 1 mA, IB = 0
Open baseCollector emitter leakage current ICES 400 nA VCE = 2 V, VBE = 0
E-B short circuitedCollector base leakage current ICBO 400 nA VCB = 2 V, IE = 0
Open emitterEmitter base leakage current IEBO 10 μA VEB = 0.5 V, IC = 0
Open collectorDC current gain hFE 150 260 450 VCE = 2.5 V, IC = 15 mA
Pulse measured
Table 5-2 General AC Characteristics at TA = 25 °CParameter Symbol Values Unit Note / Test Condition
Min. Typ. Max.Transition frequency fT 57 GHz VCE = 2.5 V, IC = 25 mA
f = 1 GHzCollector base capacitance CCB 64 fF VCB = 2 V, VBE = 0
f = 1 MHzEmitter grounded
Collector emitter capacitance CCE 0.46 pF VCE = 2 V, VBE= 0f = 1 MHzBase grounded
Emitter base capacitance CEB 0.44 pF VEB = 0.4 V,VCB = 0f = 1 MHzCollector grounded
BFP842ESD
Electrical Characteristics
Data Sheet 12 Revision 1.1, 2013-04-11
5.3 Frequency Dependent AC Characteristics
Measurement setup is a test fixture with Bias T´s in a 50 Ω system, TA = 25 °C
Figure 5-1 BFP842ESD Testing Circuit
Table 5-3 AC Characteristics, VCE = 2.5 V, f = 0.45 GHzParameter Symbol Values Unit Note / Test Condition
Min. Typ. Max.Power GainMaximum power gainTransducer gain
Gms|S21|2
––
3329.5
––
dBIC = 15 mAIC = 15 mA
Minimum Noise FigureMinimum noise figureAssociated gain
NFminGass
––
0.426
––
dBIC = 5 mAIC = 5 mA
Linearity1 dB compression point at output3rd order intercept point at output
OP1dBOIP3
––
6.522
––
dBm ZS = ZL = 50 ΩIC = 15 mAIC = 15 mA
IN
OUTBias-T
Bias-TB
(Pin 1)
E C
E
VCTop View
VB
BFP842ESD
Electrical Characteristics
Data Sheet 13 Revision 1.1, 2013-04-11
Table 5-4 AC Characteristics, VCE = 2.5 V, f = 0.9 GHzParameter Symbol Values Unit Note / Test Condition
Min. Typ. Max.Power GainMaximum power gainTransducer gain
Gms|S21|2
––
2926
––
dBIC = 15 mAIC = 15 mA
Minimum Noise FigureMinimum noise figureAssociated gain
NFminGass
––
0.4524
––
dBIC = 5 mAIC = 5 mA
Linearity1 dB compression point at output3rd order intercept point at output
OP1dBOIP3
––
722.5
––
dBm ZS = ZL = 50 ΩIC = 15 mAIC = 15 mA
Table 5-5 AC Characteristics, VCE = 2.5 V, f = 1.5 GHzParameter Symbol Values Unit Note / Test Condition
Min. Typ. Max.Power GainMaximum power gainTransducer gain
Gms|S21|2
––
25.523
––
dBIC = 15 mAIC = 15 mA
Minimum Noise FigureMinimum noise figureAssociated gain
NFminGass
––
0.4521
––
dBIC = 5 mAIC = 5 mA
Linearity1 dB compression point at output3rd order intercept point at output
OP1dBOIP3
––
7.523.5
––
dBm ZS = ZL = 50 ΩIC = 15 mAIC = 15 mA
Table 5-6 AC Characteristics, VCE = 2.5 V, f = 1.9 GHzParameter Symbol Values Unit Note / Test Condition
Min. Typ. Max.Power GainMaximum power gainTransducer gain
Gms|S21|2
––
23.521
––
dBIC = 15 mAIC = 15 mA
Minimum Noise FigureMinimum noise figureAssociated gain
NFminGass
––
0.519.5
––
dBIC = 5 mAIC = 5 mA
Linearity1 dB compression point at output3rd order intercept point at output
OP1dBOIP3
––
824.5
––
dBm ZS = ZL = 50 ΩIC = 15 mAIC = 15 mA
BFP842ESD
Electrical Characteristics
Data Sheet 14 Revision 1.1, 2013-04-11
Note: OIP3 value depends on termination of all intermodulation frequency components. Termination used for this measurement is 50 Ω from 0.2 MHz to 12 GHz.
Table 5-7 AC Characteristics, VCE = 2.5 V, f = 2.4 GHzParameter Symbol Values Unit Note / Test Condition
Min. Typ. Max.Power GainMaximum power gainTransducer gain
Gms|S21|2
––
2219
––
dBIC = 15 mAIC = 15 mA
Minimum Noise FigureMinimum noise figureAssociated gain
NFminGass
––
0.518
––
dBIC = 5 mAIC = 5 mA
Linearity1 dB compression point at output3rd order intercept point at output
OP1dBOIP3
––
825
––
dBm ZS = ZL = 50 ΩIC = 15 mAIC = 15 mA
Table 5-8 AC Characteristics, VCE = 2.5 V, f = 3.5 GHzParameter Symbol Values Unit Note / Test Condition
Min. Typ. Max.Power GainMaximum power gainTransducer gain
Gma|S21|2
––
17.516
––
dBIC = 15 mAIC = 15 mA
Minimum Noise FigureMinimum noise figureAssociated gain
NFminGass
––
0.6515
––
dBIC = 5 mAIC = 5 mA
Linearity1 dB compression point at output3rd order intercept point at output
OP1dBOIP3
––
8.525.5
––
dBm ZS = ZL = 50 ΩIC = 15 mAIC = 15 mA
Table 5-9 AC Characteristics, VCE = 2.5 V, f = 5.5 GHzParameter Symbol Values Unit Note / Test Condition
Min. Typ. Max.Power GainMaximum power gainTransducer gain
Gma|S21|2
––
12.511.5
––
dBIC = 15 mAIC = 15 mA
Minimum Noise FigureMinimum noise figureAssociated gain
NFminGass
––
0.8510.5
––
dBIC = 5 mAIC = 5 mA
Linearity1 dB compression point at output3rd order intercept point at output
OP1dBOIP3
––
824
––
dBm ZS = ZL = 50 ΩIC = 15 mAIC = 15 mA
BFP842ESD
Electrical Characteristics
Data Sheet 15 Revision 1.1, 2013-04-11
5.4 Characteristic DC Diagrams
Figure 5-2 Collector Current vs. Collector Emitter Voltage IC = f (VCE), IB = Parameter
Figure 5-3 DC Current Gain hFE = f (IC), VCE = 2.5 V
0 0.5 1 1.5 2 2.5 3 3.50
2
4
6
8
10
12
14
16
18
20
VCE
[V]
I C [m
A]
5µA
15µA
25µA
35µA
45µA
55µA
65µA
75µA
10−2
10−1
100
101
102
102
103
IC
[mA]
h FE
BFP842ESD
Electrical Characteristics
Data Sheet 16 Revision 1.1, 2013-04-11
Figure 5-4 Collector Current vs. Base Emitter Forward Voltage IC = f (VBE), VCE = 2.5 V
Figure 5-5 Base Current vs. Base Emitter Forward Voltage IB = f (VBE), VCE = 2.5 V
0.5 0.6 0.7 0.8 0.910
−5
10−4
10−3
10−2
10−1
100
101
102
VBE
[V]
I C [m
A]
0.5 0.6 0.7 0.8 0.910
−7
10−6
10−5
10−4
10−3
10−2
10−1
100
VBE
[V]
I B [m
A]
BFP842ESD
Electrical Characteristics
Data Sheet 17 Revision 1.1, 2013-04-11
Figure 5-6 Base Current vs. Base Emitter Reverse Voltage IB = f (VEB), VCE = 2.5 V
0.5 0.6 0.7 0.810
−9
10−8
10−7
10−6
10−5
10−4
VEB
[V]
I B [A
]
BFP842ESD
Electrical Characteristics
Data Sheet 18 Revision 1.1, 2013-04-11
5.5 Characteristic AC Diagrams
Figure 5-7 Transition Frequency fT = f (IC), f = 1 GHz, VCE = Parameter
Figure 5-8 3rd Order Intercept Point at output OIP3 = f (IC), ZS = ZL = 50 Ω, VCE, f = Parameters
0 5 10 15 20 25 30 35 400
5
10
15
20
25
30
35
40
45
50
55
60
IC
[mA]
f T [G
Hz]
2.50V
2.00V
1.50V 1.00V
3.00V
0.50V
0 5 10 15 20 25 300
2
4
6
8
10
12
14
16
18
20
22
24
26
28
30
IC
[mA]
OIP
3 [d
Bm
]
2V, 2400MHz2V, 3500MHz2.5V, 2400MHz2.5V, 3500MHz
BFP842ESD
Electrical Characteristics
Data Sheet 19 Revision 1.1, 2013-04-11
Figure 5-9 3rd Order Intercept Point at output OIP3 [dBm] = f (IC, VCE), ZS = ZL = 50 Ω, f = 3.5 GHz
Figure 5-10 Compression Point at output OP1dB [dBm] = f (IC, VCE), ZS = ZL = 50 Ω, f = 3.5 GHz
3 4
5
5
6
6
7
7
8
8
9
9
10
10
10
11
11
11
12
12
12
13
13
13
14
14
14
14
15
15
15
15
16
16
16
16
17
17
17
17
18
18
18
18
19
19
19
19
20
20
20
20
21
21
21
21
22
22
22
22
23
23
23
23
24
2424
24
25
25
25
26
26
VCE
[V]
I C [m
A]
1 1.5 2 2.5 3
10
15
20
25
30
−8 −7 −6 −5
−4
−4
−3
−3
−2
−2
−1
−1
−1−1
0
0
0
000
1
1
1
111
2
2
2
222 33
3
3
3
3
444
4
4
4
555
5
5
5
66
6
6
6
7
7
7
7
8
8
8
9
9
10
VCE
[V]
I C [m
A]
1 1.5 2 2.5 35
10
15
20
25
30
BFP842ESD
Electrical Characteristics
Data Sheet 20 Revision 1.1, 2013-04-11
Figure 5-11 Collector Base Capacitance CCB = f (VCB), f = 1 MHz
Figure 5-12 Gain Gma,Gms, |S21|2 = f (f), VCE = 2.5 V, IC = 15 mA
0 0.5 1 1.5 2 2.5 30.055
0.06
0.065
0.07
0.075
0.08
0.085
VCB
[V]
CC
B [p
F]
0 2 4 6 8 100
3
6
9
12
15
18
21
24
27
30
33
36
f [GHz]
G [d
B]
Gms
Gma
|S21
|2
BFP842ESD
Electrical Characteristics
Data Sheet 21 Revision 1.1, 2013-04-11
Figure 5-13 Maximum Power Gain Gmax = f (IC), VCE = 2.5 V, f = Parameter in GHz
Figure 5-14 Maximum Power Gain Gmax = f (VCE), IC = 15 mA, f = Parameter in GHz
0 10 20 30 40 503
6
9
12
15
18
21
24
27
30
33
36
IC
[mA]
Gm
ax [d
B]
0.45GHz
0.90GHz
1.50GHz
1.90GHz
2.40GHz
3.50GHz
5.50GHz
0.5 1 1.5 2 2.5 3 3.53
6
9
12
15
18
21
24
27
30
33
36
VCE
[V]
Gm
ax [d
B]
0.45GHz
0.90GHz
1.50GHz 1.90GHz 2.40GHz
3.50GHz
5.50GHz
BFP842ESD
Electrical Characteristics
Data Sheet 22 Revision 1.1, 2013-04-11
Figure 5-15 Input Reflection Coefficient S11 = f (f), VCE = 2.5 V, IC = 5 / 15 mA
Figure 5-16 Source Impedance for Minimum Noise Figure Zopt = f (f), VCE = 2.5 V, IC = 5 / 10 / 15 mA
10.1 0.2 0.3 0.4 0.5 21.5 3 4 50
1
−1
1.5
−1.5
2
−2
3
−3
4
−4
5
−5
10
−10
0.5
−0.5
0.1
−0.1
0.2
−0.2
0.3
−0.3
0.4
−0.4
0.03 to 10 GHz
1.02.0
3.0
5.0
7.09.0
10.0
1.0
2.03.0
5.0
4.0
4.07.09.0
10.0
0.03
5 mA15 mA
10.1 0.2 0.3 0.4 0.5 21.5 3 4 50
1
−1
1.5
−1.5
2
−2
3
−3
4
−4
5
−5
10
−10
0.5
−0.5
0.1
−0.1
0.2
−0.2
0.3
−0.3
0.4
−0.4
0.50.9
1.5
1.92.43.5
4.05.0
5.56.0
0.9
2.43.5
5.5 0.9
5.5
5 mA
10 mA
15 mA
BFP842ESD
Electrical Characteristics
Data Sheet 23 Revision 1.1, 2013-04-11
Figure 5-17 Input Reflection Coefficient S11 = f (f), VCE = 2.5 V, IC = 5 / 15 mA
Figure 5-18 Output Reflection Coefficient S22 = f (f), VCE = 2.5 V, IC = 5 / 15 mA
0 1 2 3 4 5 6 7 8 9 10−25
−20
−15
−10
−5
0
f [GHz]
S11
[dB
]
15mA
5mA
10.1 0.2 0.3 0.4 0.5 21.5 3 4 50
1
−1
1.5
−1.5
2
−2
3
−3
4
−4
5
−5
10
−10
0.5
−0.5
0.1
−0.1
0.2
−0.2
0.3
−0.3
0.4
−0.4
0.030.03
0.03 to 10 GHz
1.0
3.04.0
5.0
1.0
2.0
6.0
7.0
8.0
9.0
10.0
5 mA15 mA
BFP842ESD
Electrical Characteristics
Data Sheet 24 Revision 1.1, 2013-04-11
Figure 5-19 Noise Figure NFmin = f (f), VCE = 2.5 V, IC = 5 / 10 / 15 mA, ZS = Zopt
Figure 5-20 Noise Figure NFmin = f (IC), VCE = 2.5 V, ZS = Zopt, f = Parameter in GHz
0 1 2 3 4 5 6 70
0.2
0.4
0.6
0.8
1
1.2
1.4
f [GHz]
NF
min
[dB
]
5mA
10mA
15mA
0 2 4 6 8 10 12 14 16 18 20 22 240
0.2
0.4
0.6
0.8
1
1.2
1.4
IC
[mA]
NF
min
[dB
]
0.9GHz2.4GHz3.5GHz
5.5GHz
BFP842ESD
Electrical Characteristics
Data Sheet 25 Revision 1.1, 2013-04-11
Figure 5-21 Noise Figure NF50 = f (IC), VCE = 2.5 V, ZS = 50 Ω, f = Parameter in GHz
Note: The curves shown in this chapter have been generated using typical devices but shall not be considered as a guarantee that all devices have identical characteristic curves. TA = 25 °C
0 2 4 6 8 10 12 14 16 18 20 22 240
0.2
0.4
0.6
0.8
1
1.2
1.4
1.6
1.8
2
IC
[mA]
NF
50 [d
B]
0.9GHz2.4GHz3.5GHz
5.5GHz
BFP842ESD
Simulation Data
Data Sheet 26 Revision 1.1, 2013-04-11
6 Simulation Data
For the SPICE Gummel Poon (GP) model as well as for the S-parameters (including noise parameters) pleaserefer to our internet website. Please consult our website and download the latest versions before actually startingyour design.You find the BFP842ESD SPICE GP model in the internet in MWO- and ADS-format, which you can import intothese circuit simulation tools very quickly and conveniently. The model already contains the package parasiticsand is ready to use for DC and high frequency simulations. The terminals of the model circuit correspond to thepin configuration of the device.The model parameters have been extracted and verified up to 12 GHz using typical devices. The BFP842ESDSPICE GP model reflects the typical DC- and RF-performance within the limitations which are given by the SPICEGP model itself. Besides the DC characteristics all S-parameters in magnitude and phase, as well as noise figure(including optimum source impedance, equivalent noise resistance and flicker noise) and intermodulation havebeen extracted.
BFP842ESD
Package Information SOT343
Data Sheet 27 Revision 1.1, 2013-04-11
7 Package Information SOT343
Figure 7-1 Package Outline
Figure 7-2 Package Footprint
Figure 7-3 Marking Description (Marking BFP842ESD: T9s)
Figure 7-4 Tape dimensions
SOT343-PO V08
1.25
±0.1
0.1 MAX.
2.1±
0.1
0.15 +0.1-0.050.3 +0.1
2 ±0.2±0.10.9
3
2
4
1
A
+0.10.6AM0.2
1.3
-0.05
-0.05
0.15
0.1 M
4x
0.1
0.1
MIN
.0.6
SOT343-FP V08
0.8
1.6
1.15
0.9
XYs56
Date code (YM)2005, June
Type code
Manufacturer
Pin 1
SOT323-TP V02
0.24
2.15
8
2.3
1.1Pin 1