Infineon HybridPACK Drive FS820R08A6P2B€¦ · of the Infineon FS820R08A6P2B 750V 820A IGBT...

©2017 by System Plus Consulting | Infineon FS820R08A6P2B 1

21 rue la Noue Bras de Fer44200 NANTES - FRANCE +33 2 40 18 09 16 [email protected] www.systemplus.fr

Infineon FS820R08A6P2BHybridPACK Drive 750V IGBT Module Power Semiconductor report by Elena Barbarini June 2017 – version 1


SUMMARY

Overview / Introduction 3

o Executive Summary

o Reverse Costing Methodology

Company Profile 8

o Infineon

Physical Analysis 12

o Synthesis of the Physical Analysis

o Package analysis

Package opening

Package Cross-Section

o IGBT Die

IGBT Die View & Dimensions

IGBT Die Process

IGBT Die Cross-Section

IGBT Die Process Characteristic

IGBT Manufacturing Process 45

o IGBT Die Front-End Process

o IGBT Die Fabrication Unit

o Final Test & Packaging Fabrication unit

Cost Analysis 55

o Synthesis of the cost analysis

o Yields Explanation & Hypotheses

o IGBT die

IGBT Front-End Cost

IGBT Die Probe Test, Thinning & Dicing

IGBT Wafer Cost

IGBT Die Cost

o Complete IGBT

Packaging Cost

Final Test Cost

Component Cost

Price Analysis 68

o Estimation of selling price

Comparison 71

o Comparison between Infineon HybridPACK2

o Comparison between Infineon IGBT4 and IDT2

Company services 75


Overview / Introductiono Executive Summaryo Marketo Reverse Costing

Methodology

Company Profile & SupplyChain

Physical Analysis

Manufacturing Process Flow

Cost Analysis

Selling Price Analysis

Comparison

About System Plus

Executive Summary

This full reverse costing study has been conducted to provide insight on technology data, manufacturing cost and selling priceof the Infineon FS820R08A6P2B 750V 820A IGBT module.

The HybridPack Power module is the latest power packaging specifically designed for automotive applications. TheFS820R08A6P2B is driving 820A and uses a new copper pin-fin dissipation structure optimized for direct liquid cooling andimproving the thermal cycles capability and extends the lifetime of the power module.

The terminals are connected directly on the DBC without wire bonding and the new press-fit pin technology allows an easy andoptimized system integration.

The IGBT diode is manufactured with the new EDT design which allows reduction of conduction losses and switching losses.

Based on a complete teardown analysis, the report also provides an estimation of the production cost of the IGBT, Diode andpackage.

Moreover, the report proposes a comparison between IGBT4 and EDT Infineon design and betweenHubridPack2 andHybridPack drive, highlights the differences in design and manufacturing process and their impact on device size andproduction cost.


Overview / Introduction

Company Profile & SupplyChain o Infineon Profileo Infineon Products

Physical Analysis


Cost Analysis


Comparison

About System Plus

Infineon FS820R08A6P2B Datasheet




Physical Analysiso Synthesiso Packageo Die designo Die Cross-Section


Cost Analysis


Comparison

About System Plus

Synthesis of the Physical Analysis

Hybridpack:

o Dimensions: xxxmm x xxxmm xxxmm

o Number of Pins: xx-pin

IGBT:

o Dimension: xxxmm x xxxmm = xxxxmm²

o Electrical Connection: xxxx bonding

o Placement in the package: xxxxxx on DBC

Package

IGBT

Package opening – Optical View

Diode:

o Dimension: xxxmm x xxxxxmm = xxxxmm²

o Electrical Connection: xxxxxxbonding

o Placement in the package: xxxxxxx on DBC

Diode






Cost Analysis


Comparison

About System Plus

Package Markings

Package markings

Marking:

Infineon Logo G1611

FS820R8A6P2B_ENG 00049

HybridPACK Drive






Cost Analysis


Comparison

About System Plus

Package dimensions

o Pin fin baseplate size: xxxx mm

o Pin fin lenght: xxxx mm

o Pin fin pitch: xxxxx mm

Package Back view

Package Side view






Cost Analysis


Comparison

About System Plus

Package opening

Wire Bonding per DBC:

Source

o xxx xxxxwire.

o Diameter: xxxxµm.

o Medium length: xxxxmm

o x stitch

Gate

o xxx Aluminium wire.

o Diameter: xxxxµm.

o Medium length: xxxxmm

o xxxxxstitch

3 IGBT dies of xxxA are assembled in parallel

1 Thermistor xxxxxx on each DBC substrate






Cost Analysis


Comparison

About System Plus

Package opening

Package Cross section






Cost Analysis


Comparison

About System Plus

xxxx

mm

IGBT die Dimensions

IGBT Die – Optical view

o Die dimensions:xxxx mm² (xxxxmm x xxxxmm)

o There is no marking on the die.

xxxxx mm






Cost Analysis


Comparison

About System Plus

Die process






Cost Analysis


Comparison

About System Plus

Die cross section

Die cross section – SEM View

o Substrate thickness: xxxx µm

xxxxx µm






Cost Analysis


Comparison

About System Plus

Die cross section

Die cross section

polyimide

Die cross section

Guard ring SourceScribe line Implant

Implant Implant






Cost Analysis


Comparison

About System Plus

Die cross section


o Transistor pitch: xxx µm






Cost Analysis


Comparison

About System Plus

Die cross section- Drain







Cost Analysis


Comparison

About System Plus

xxxx

mm

Diode die Dimensions

Diode Die – Optical view

o Die dimensions:xxxx mm² (xxxxmm x xxxxxmm)

o There is no marking on the die.

xxxx mm






Cost Analysis


Comparison

About System Plus

Die cross section


o Substrate thickness: xxx µm

xxxx µm






Cost Analysis


Comparison

About System Plus

Die cross section

Die cross section Die cross section




Physical Analysis

Manufacturing Process Flowo IGBT Fab Unito IGBT Process Flowo Packaging Fab Unit

Cost Analysis


Comparison

About System Plus

Description of the Wafer Fabrication Units - Diode

In our calculation, we simulate a production unit using xxxmm wafers.

Diode wafer fab unit:

Name: Infineon xxxxmm thin wafer

Wafer diameter: xxxxmm (x-inch)

Capacity: xxxxx,000 wafers / month

Year of start: xxxxx

Most advanced process: Power device

Products: Discrete/Power - Mainly power products; Diodes & IGBT

Location: Villach, Austria

This manufacturing line has been created in xxxxxx. We assume that the clean room and equipments are depreciated.




Physical Analysis


Cost Analysis


Comparison

About System Plus

IGBT Process Flow

IGBT Wafer Process:

o The manufacturing of the IGBT begins with the implantation and the trench etching. Then the oxide layers and the polysilicon are deposited and patterned. Then the aluminum layer is deposited. Finally a thin passivation layer is reported.

o The wafer is backgrinded to have 70µm of thickness. The implantation on the backside are performed. Finally, the metal layers on the backside are depositied.

o A polyimide protection layer is deposited on the guard ring and on the gate supply line.

IGBT Structure Schema




Physical Analysis


Cost Analysis


Comparison

About System Plus

IGBT Process Flow

IGBT Structure Schema

Si wafer

• Guard ring Implantation

Si wafer

• Trench etching

Si Wafer

• Floating P region implantation

• Base P implantation

• Emitter N + implantation

Guard ring implantation #1

Trench

P base doping N+ emitter doping

Guard ring implantation #2


Si wafer

• Guard ring Implantation

• P anode implantation

Si wafer

• Oxide 1

• Polysilicon

• Oxide 2

Si Wafer

• Aluminum

• Backside

• Polyimide

Guard ring implantation

Oxide 2

P anode implantation

Metal deposition on the backside :- Ohmic contact in aluminum. - A thin Ti layer to stop the metal diffusion- A Ni-Ag layer in order to protect the back side from the corrosion and enhance the solder

Aluminum

Polyimide

Oxide 1Polysilicon




Physical Analysis


Cost Analysiso Synthesiso Die Costo Packaging Costo Component Cost


Comparison

About System Plus

Main steps of economic analysis

DBC Assembly

Hybridpack Assembly

Final Test Cost

IGBT

Front-End Costxxxxx

xxxxxx

We perform the economic analysis of the component with the Power CoSim+

IGBT

Back end Cost

Diode

Front-End Cost

Diode

Back end Cost

xxxxx

xxxxxxxxxxx




Physical Analysis




Comparison

About System Plus

Yields Explanation

The wafers and dies are tested during the process flow. There are 2 types of test :

The tests on the physical characteristics of the wafer like the thickness deposited.

The tests on the electrical functionalities of the die.

The difference is important because with the physical test, a bad result means a problem on a step and all the dies on the wafer are defective, so the wafer is scrapped. Usually these yields are good for mature technologies.

The tests on the dies are different. Each die is tested, one by one or simultaneously using “parallel” tests, and only the defective dies are scraped. During the probe test which is realized on the wafer, the defective dies are marked and are not assembled in package.

Yield Apply on Description

Manufacturing Yield IGBT + Diode The defective wafers are scraped

Probe yield IGBT + Diode

The defective dies are scrapedThe number of good dies is function of the probe yield. Only the good dies are assembled in the package

Dicing Yield IGBT + Diode The defective dies are scraped

Packaging yield IGBT + Diode + Package The defective components are scraped

Final test yield IGBT + Diode + Package The defective components are scraped




Physical Analysis




Comparison

About System Plus

IGBT Front-End Cost

The front-end cost ranges from $xxxx to $xxxx accordingto yield variations.

The main part of the wafer cost is due to the xxxxx (32%).




Physical Analysis




Comparison

About System Plus

IGBT Die Cost

The IGBT Component cost ranges from $xxx to $xxxaccording to yield variations.

The Front-end manufacturing represents xxx of thecomponent cost (medium yield estimation).

Probe test, dicing and scrap account for xxxx% of thecomponent cost.




Physical Analysis




Comparison

About System Plus

Diode Wafer Cost per process steps




Physical Analysis




Comparison

About System Plus

Diode Die Cost

The IGBT Component cost ranges from $xxxx to $xxxxaccording to yield variations.

The xxxxx manufacturing represents xxxx% of thecomponent cost (medium yield estimation).

Probe test, dicing and scrap account for xxxx% of thecomponent cost.




Physical Analysis




Comparison

About System Plus

Packaging Cost




Physical Analysis




Comparison

About System Plus

Component Cost

The component cost ranges from $xxx to $xxxxxaccording to yield variations.




Physical Analysis


Cost Analysis


Comparison

About System Plus

Estimated Manufacturer Price




Physical Analysis


Cost Analysis


Comparison

About System Pluso Company serviceso Related reportso Feedbackso Contacto Legal

REVERSE COSTING ANALYSES - SYSTEM PLUS CONSULTING

Power Semiconductors & Modules• SP14186 - Infineon FS100R12PT4 EconoPACK4• SP13136 Infineon FS600R07A2E3 Hybridpack2• Rohm BSM180D12P3C007 1200V Trench SiC MOSFET• SP16281 - Infineon_CoolIR_IGBT_Module• SP16287 - Toyota Prius PCU Power Modules• SP15213 - CREE CAS300M17BM2 SiC MOSFET• SP15232 - Semikron SKiM306GD12E4 solderless module

Related Reports




Physical Analysis


Cost Analysis


Comparison


REVERSE COSTING ANALYSES - SYSTEM PLUS CONSULTING

Power Semiconductors & Compound• Infineon – IPB60R280C6 600V CoolMOS C6 MOSFET• Infineon FS100R12PT4 EconoPACK™4 1200V IGBT4

Module • Infineon FS600R07A2E3 HybridPACK2 100KW 3-phase • ROHM 1200V Trench SiC MOSFET BSM180D12P3C007

Module• SP Infineon CooliR²Die™ Power Module • Toyota Prius 4 PCU Power Modules • CREE 1700V SiC Module First 1700V SiC MOSFET with Z-

Rec SiC Diode • SEMIKRON SKiM306GD12E4 1200V 300A IGBT Solderless

Module

Related Reports

MARKET AND TECHNOLOGY REPORTS - YOLE DÉVELOPPEMENT

• Power Module Packaging: Material Market and Technology Trends 2017

• IGBT Market and Technology Trends

http://www.systemplus.fr/reverse-costing-reports/infineon-ipb60r280c6-600v-coolmos-c6-mosfet/

http://www.systemplus.fr/reverse-costing-reports/infineon-ipb60r280c6-600v-coolmos-c6-mosfet/

http://www.systemplus.fr/reverse-costing-reports/infineon-econopack4-1200v-igbt4-module-2/

http://www.systemplus.fr/reverse-costing-reports/infineon-fs600r07a2e3-hybridpack2-100kw-3-phase/

http://www.systemplus.fr/reverse-costing-reports/rohm-1200v-trench-sic-mosfet-2/

http://www.systemplus.fr/reverse-costing-reports/infineon-coolir%C2%B2die-power-module/

http://www.systemplus.fr/reverse-costing-reports/toyota-prius-power-modules/

http://www.systemplus.fr/reverse-costing-reports/cree-1700v-sic-module/

http://www.systemplus.fr/reverse-costing-reports/semikron-skim306gd12e4/

https://www.i-micronews.com/category-listing/product/power-module-packaging-material-market-and-technology-trends-2017.html

https://www.i-micronews.com/category-listing/product/igbt-market-and-technology-trends.html


COMPANYSERVICES




Physical Analysis


Cost Analysis


Comparison


Business Models Fields of Expertise

Custom Analyses(>130 analyses per year)

Reports(>40 reports per year)

Costing Tools

Trainings




Physical Analysis


Cost Analysis


Comparison


Contact

Headquarters21 rue La Noue Bras de Fer44200 NantesFRANCE+33 2 40 18 09 [email protected]

Europe Sales OfficeLizzie LEVENEZFrankfurt am MainGERMANY+49 151 23 54 41 [email protected]

America Sales OfficeSteve [email protected]

www.systemplus.fr

Asia Sales OfficeTakashi [email protected]

Mavis WANGGREATER [email protected]

NANTESHeadquarter

FRANKFURT/MAINEuropa Sales Office

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Infineon HybridPACK Drive FS820R08A6P2B€¦ · of the Infineon FS820R08A6P2B 750V 820A IGBT...

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Transcript of Infineon HybridPACK Drive FS820R08A6P2B€¦ · of the Infineon FS820R08A6P2B 750V 820A IGBT...