Increasing Accuracy and Productivity of Device...
Transcript of Increasing Accuracy and Productivity of Device...
Increasing Accuracy and Productivity of Device Characterization Processes for Efficient Modeling of Next-Generation
Semiconductors
Andrej Rumiantsev, Stojan Kanev
2MOS-AK Meeting: Increasing Accuracy and Productivity of Device Characterization Processes, A.Rumiantsev, S.Kanev3 April 2009 © All Rights Reserved
Outline
Increasing the Test cell efficiency and productivity
Providing complete measurement solution
Improving measurement accuracy
… for better, faster, and cost-effective device modeling process
3MOS-AK Meeting: Increasing Accuracy and Productivity of Device Characterization Processes, A.Rumiantsev, S.Kanev3 April 2009 © All Rights Reserved
Outline
Increasing the Test cell efficiency and
productivity
Providing complete measurement solution
Improving measurement accuracy
4MOS-AK Meeting: Increasing Accuracy and Productivity of Device Characterization Processes, A.Rumiantsev, S.Kanev3 April 2009 © All Rights Reserved
ReAlign™ Technology
Automated probe-to-pad alignment procedure based on upward-looking chuck camera:
Thermal drift compensation of probe card & wafer at multiple temperatures
Wizard driven initial alignment
In combination with ATM provides automaticre-alignment at multiple temperatures
5MOS-AK Meeting: Increasing Accuracy and Productivity of Device Characterization Processes, A.Rumiantsev, S.Kanev3 April 2009 © All Rights Reserved
Initial Alignment - a wizard driven procedure:
1. Determine new contact height
2. Align wafer (theta)
3. Compensate thermal expansion of wafer
4. Z-Profiling
5. Probe-to-Pad Alignment including new home position
In less than 5 minutesIn less than 5 minutes
How does ReAlign work?
6MOS-AK Meeting: Increasing Accuracy and Productivity of Device Characterization Processes, A.Rumiantsev, S.Kanev3 April 2009 © All Rights Reserved
BenefitsBenefits::1. Automatic compensation of thermal expansion of
wafer & thermal probe drifts due to temperature changes
2. Support included in modeling software (e.g. IC-CAP)3. In combination with ATM: the only solution for
““Unattended Test at Multiple TemperaturesUnattended Test at Multiple Temperatures””
-60° … 25° … 85° … 200°C…
ReAlign™ Technology
7MOS-AK Meeting: Increasing Accuracy and Productivity of Device Characterization Processes, A.Rumiantsev, S.Kanev3 April 2009 © All Rights Reserved
ReAlign™ Technology Advantages
1. Automated generation of parameter & reliability data
Unattended test at multiple temperatures
2. Constant contact quality over the whole wafer @ Temp range
Automated compensation of thermal expansion in Z (profiling)
3. Probe small pads at multiple temperatures
Automated compensation of thermal expansion in X-Y
4. Easily integrate in test executive programs
Uses a single software command, implemented (e.g. IC-CAP)
8MOS-AK Meeting: Increasing Accuracy and Productivity of Device Characterization Processes, A.Rumiantsev, S.Kanev3 April 2009 © All Rights Reserved
Example of ReAlign™ Time Saving
5 Temperatures
9MOS-AK Meeting: Increasing Accuracy and Productivity of Device Characterization Processes, A.Rumiantsev, S.Kanev3 April 2009 © All Rights Reserved
Probe Marks after ReAlign
Excellent Excellent ReAlignReAlign AND Stepping AccuracyAND Stepping Accuracy
300mm wafer & 5 Temps
ReAlign Accuracy
Pro
be S
yste
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10MOS-AK Meeting: Increasing Accuracy and Productivity of Device Characterization Processes, A.Rumiantsev, S.Kanev3 April 2009 © All Rights Reserved
Outline
Increasing the Test cell efficiency and
productivity
Providing complete measurement solution
Improving measurement accuracy
11MOS-AK Meeting: Increasing Accuracy and Productivity of Device Characterization Processes, A.Rumiantsev, S.Kanev3 April 2009 © All Rights Reserved
Today’s Test Challenges
Today’s industry is driven by:
Production at very high volumes, at very competitive pricing, mandating rapid timetime--toto--marketmarket, continuous cost cutting and constant performance improvement
Wafer level test is getting complextest is getting complex……
Test itself doesn’t generate a product …just costs
How to keep CostCost and TimeTime of test low?
12MOS-AK Meeting: Increasing Accuracy and Productivity of Device Characterization Processes, A.Rumiantsev, S.Kanev3 April 2009 © All Rights Reserved
Test Is Getting Complex
How to make our customers experts?
Source: Frost & Sullivan 2009
13MOS-AK Meeting: Increasing Accuracy and Productivity of Device Characterization Processes, A.Rumiantsev, S.Kanev3 April 2009 © All Rights Reserved
Providing Integrated Measurement Solution
What are IntegratedIntegrated solutions?
Test industry trends in the next few years
Source: Frost & Sullivan 2009
14MOS-AK Meeting: Increasing Accuracy and Productivity of Device Characterization Processes, A.Rumiantsev, S.Kanev3 April 2009 © All Rights Reserved
Daily Measurement Challenge (RF e.g.)
Probe StationProbe Accessories (tips, probe cards, cables…) Measurement InstrumentsCalibration SoftwareMeasurement SoftwareDUT EMI-shielding
Target: Best Possible Accuracy!Best Possible Accuracy!
4. Vector Network Analyzer (VNA)
5. DC Biasing
7. SussCal®: RRMT+, LRM+
6. Measurement Software(i.e. IC-CAP)
1. Probe System
8. ProberBench®
GPIB bus
SUSS Link
How to provide complete IntegratedIntegratedsolutions for best possible accuracy?
2. RF & DC Probes3. CSR Cal Substrates
9. Cabling
15MOS-AK Meeting: Increasing Accuracy and Productivity of Device Characterization Processes, A.Rumiantsev, S.Kanev3 April 2009 © All Rights Reserved
Customer Integration ChallengesTo be successful, the customer needs to fit all pieces together!
- Complex knowledge of different measurement instrumentation and probe systems is required
- Often engineers waste time trying to fit them together- Using wrong cabling, grounding, connectivity…- Typical outcome: poor measurement results
Solution:Solution: To hire an external “integrator”, who knows the measurement instrumentation but not the probe systemAlternative:Alternative: Invest in a “solution” that already includes the measurement equipment puzzle piece (marked up 30…100%) which may already be available or can be purchased cheaper with standing purchasing agreements.
16MOS-AK Meeting: Increasing Accuracy and Productivity of Device Characterization Processes, A.Rumiantsev, S.Kanev3 April 2009 © All Rights Reserved
Aren’t there any other alternatives?
The real alternative is “SUSSΣ”1.Σ of all needed parts for integration of certain
measurement instrumentation2.Σ of all software tools for automation and productivity
integration3.Σ of all knowledge about wafer level measurement
requirements4.Σ of all calibration and verification procedure for confidence
in your results5.Σ of all know-how for set-up the system6.Σ of various application support
17MOS-AK Meeting: Increasing Accuracy and Productivity of Device Characterization Processes, A.Rumiantsev, S.Kanev3 April 2009 © All Rights Reserved
Σ = Seamless InteGration for Measurement Accuracy
The SIGMA Value
The SIGMA value is to provide a complete and risk free solution through
Seamless InteGrated Measurementswith the customer’s preferredtest equipment and software
to reach best possible measurement accuracy!
18MOS-AK Meeting: Increasing Accuracy and Productivity of Device Characterization Processes, A.Rumiantsev, S.Kanev3 April 2009 © All Rights Reserved
Outline
Increasing the Test cell efficiency and
productivity
Providing complete measurement solution
Improving measurement accuracy
19MOS-AK Meeting: Increasing Accuracy and Productivity of Device Characterization Processes, A.Rumiantsev, S.Kanev3 April 2009 © All Rights Reserved
Let’s go discuss an example of SIGMA
For broad-band S-Parameter measurement set-up
20MOS-AK Meeting: Increasing Accuracy and Productivity of Device Characterization Processes, A.Rumiantsev, S.Kanev3 April 2009 © All Rights Reserved
SIGMA Integration for Agilent PNA 110GHz
B50-145268
P/N PictureSUSS one part number includes:
Optimized VNA integrationShortest signal measurement path SussCal LRM+ for on-wafer calibrationPatented ceramic auxiliary chucks
Contents
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21MOS-AK Meeting: Increasing Accuracy and Productivity of Device Characterization Processes, A.Rumiantsev, S.Kanev3 April 2009 © All Rights Reserved
Improved Measurement Dynamic
Frequency, GHz120100806040200
10
0
-10
-20
-30
-0,038
-14,917
-0,115
-21,363
0,077
6,446
S21 [Mag, dB] SUSSS21 [Mag, dB] otherAdvantage
Sweep Time vs. IFBW(57 data points)
5,50
7,20
9,70
12,30
0
2
4
6
8
10
12
14
0 20 40 60 80 100 120
IFBW, Hz
Sw
eep t
ime,
s
System signal attenuation and measurement time after optimized cabling by SIGMA
Improvement: > 6.5 dB
1
22MOS-AK Meeting: Increasing Accuracy and Productivity of Device Characterization Processes, A.Rumiantsev, S.Kanev3 April 2009 © All Rights Reserved
Improved Measurement Dynamic
Advantage of 6 dB in measurement dynamic: about 6 dB better signal/noise ratio;IFBW can be increased in about 4 times for the same
measurement accuracy
Benefits: Measure up to 3 times fasterProduction measurement time can be reduced from about 20 hours per wafer down to one shift per wafer (8 hours)
1
23MOS-AK Meeting: Increasing Accuracy and Productivity of Device Characterization Processes, A.Rumiantsev, S.Kanev3 April 2009 © All Rights Reserved
49
49.5
50
50.5
51
51.5
52
52.5
53
0 20 40 60 80 100 120Frequency (GHz)
Res
ista
nce
(O
hm
)
Z.11.LRRM
Z.11.LRMp
Z.22.LRRM
Z.22.LRMp
Optimized Wafer-Level Calibration Methods
System reference impedance Z0: eLRRM and LRM+
0
0
ZZZZS
DUT
DUT
+−
=
LRM+ improves measurement accuracy for challenging DUTs (i.e. high-Q inductors…)R. Doerner, ARFTG 69th, 2007.
50,0 ≠LRRMZ?, =LRRMDUTS
2
24MOS-AK Meeting: Increasing Accuracy and Productivity of Device Characterization Processes, A.Rumiantsev, S.Kanev3 April 2009 © All Rights Reserved
Optimized Wafer-Level Calibration Methods
20
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40
50
60
70
0 40 80 12020 60 100Frequency, GHz
On-Wafer NIST Multiline TRL
Probe-Tip SOLT + De-Embedding
On-Wafer SUSS LRM+
Advanced 0.13 μm RF-CMOS NFET(IBM), Cgs, fF
*Rumiantsev, MOS-AK 2008, San Francisco
2
25MOS-AK Meeting: Increasing Accuracy and Productivity of Device Characterization Processes, A.Rumiantsev, S.Kanev3 April 2009 © All Rights Reserved
Optimized Wafer-Level Calibration Methods
LRM+ and NIST Multiline (with 3 lines) are comparable for measurement accuracyLRM+ is more practical for implementation:
Requires fewer standards: 3 vs. 5 Saves test chip size by a factor of ~14xTwice as fast: 10 sweeps vs. 20 sweeps
Does not require motorized positioners (or operator): cheaper and faster
2
26MOS-AK Meeting: Increasing Accuracy and Productivity of Device Characterization Processes, A.Rumiantsev, S.Kanev3 April 2009 © All Rights Reserved
Improved mm-Wave Calibration
“Mysterious results”Short goes positive“ringing, lossy lines”ft, fmax, h21 are “too good”
0 20 40 60 80 100 120FREQUENCY (GHz)
-0.2
0
0.2
0.4
0.6
0.8
DB(|S[1,1]|)short
3
NIST multiline TRL on GaAS Model
Calibrations on ISS
NIST multiline TRL on GaAS Model
Calibrations on ISS
A. J. Lord, "Comparing the accuracy and repeatability of on-wafer calibration techniques to 110GHz," in European Microwave Conference, 1999, pp. 28-31.
27MOS-AK Meeting: Increasing Accuracy and Productivity of Device Characterization Processes, A.Rumiantsev, S.Kanev3 April 2009 © All Rights Reserved
Improved mm-Wave Calibration
Calibration Substrate1
Metal Chuck
CPW
3 SUSS Solution
Ceramic Chuck
2
Metal Chuck
AbsorberAbsorber
http://www.home.agilent.com/upload/cmc_upload/All/AR132.pdf
3
28MOS-AK Meeting: Increasing Accuracy and Productivity of Device Characterization Processes, A.Rumiantsev, S.Kanev3 April 2009 © All Rights Reserved
Improved mm-Wave Calibration
Influence of different auxiliary chuck materials
3
A. Rumiantsev, R. Doerner, and E. M. Godshalk, "Influence of calibration substrate boundary conditions on CPW characteristics andcalibration accuracy at mm-wave frequencies," ARFTG Microwave Measurements Conference-Fall, 72nd, pp. 168-173, 2008.
NIST multiline TRL on GaAS Model
Calibrations on ISS
NIST multiline TRL on GaAS Model
Calibrations on ISS
• Absorber misleads results from 50 GHz
• Ceramic is close to ideal
29MOS-AK Meeting: Increasing Accuracy and Productivity of Device Characterization Processes, A.Rumiantsev, S.Kanev3 April 2009 © All Rights Reserved
Unique Integration with IC-CAP
Control, calibration, measurement, and modeling on the same computer with integrated ReAlign support
http://eesof.tm.agilent.com/products/iccap_main.html
Acknowledgement: Dr. Franz Sischka, Agilent Technologies
30MOS-AK Meeting: Increasing Accuracy and Productivity of Device Characterization Processes, A.Rumiantsev, S.Kanev3 April 2009 © All Rights Reserved
Summary of SIGMA Enhanced S-Parameter
20
30
40
50
60
70
0 40 80 12020 60 100Frequency, GHz
On-Wafer NIST Multiline TRL
Probe-Tip SOLT + De-Embedding
On-Wafer SUSS LRM+
Advanced 0.13 μm RF-CMOS NFET(IBM), Cgs, fF
Frequency, GHz120100806040200
10
0
-10
-20
-30
-0,038
-14,917
-0,115
-21,363
0,077
6,446
S21 [Mag, dB] SUSSS21 [Mag, dB] otherAdvantage
1. Excellent measurement dynamic
So what does this have to do with fT, fMAX?
2. Dedicated on-wafer calibration 3. Ceramic auxiliary chucks
• Best-in-class measurements up to 110 GHz and beyond
• Better extraction of fT, fMAX
• More accurate transistor models
31MOS-AK Meeting: Increasing Accuracy and Productivity of Device Characterization Processes, A.Rumiantsev, S.Kanev3 April 2009 © All Rights Reserved
Conclusion
SUSS provides unique solutions for wafer-level characterization for device modeling
1. Automated generation of parametric and reliability data at multiple temperatures
2. Complete and risk free solution through seamless integrated measurements with the customer’s preferred test equipment and software to reach best possible measurement accuracy
3. Proven example for advanced broadband characterization system up to 110GHz was presented