InAlN/GaN HEMTs Technologies for Microwave, Fast …€¦ · Page 3 III-. December 2012 III-8 What...
Transcript of InAlN/GaN HEMTs Technologies for Microwave, Fast …€¦ · Page 3 III-. December 2012 III-8 What...
Copyright © 2011 III-V Lab. All rights reserved.
InAlN/GaN HEMTs Technologies for Microwave, Fast switching and Mixed
Signal Applications
S.DELAGE / S.PIOTROWICZ
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► III-V Lab presentation
►Motivations
►Technology for L & S band applications
►Technology for X to Ka band applications
►Fast Switching applications
►E/D mode devices for mixed signal applications
Summary
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What is III-V Lab?
► A jointly owned Alcatel-Lucent / Thales /CEA R&D Lab
■ French GIE (Groupement d’Intérêt Economique) organization
► with about 150 R&D experts (incl. 25 from CEA-Leti + ~18 PhD students)
■ Dedicated to epitaxial growth, device and circuit design and manufacturing
► performing R&T on III-V semiconductor technology and integration with Si circuits and micro-systems
■ Optoelectronic and microelectronic materials, devices and circuits
■ From basic research to technology transfer for industrialisation …
■ … or to small scale and pilot line production
► for complementary Alcatel-Lucent / Thales applications …
■ High bit rate Optical Fibre and Wireless Telecommunications
■ Microwave and Photonic systems for Defence, Security and Space
► … and looking for valorisation through external cooperation
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Leti technology
platforms
CEA-Leti : third partner in III-V Lab
► ‘Alcatel-Thales III-V Lab’ becomes ‘III-V Lab’
► Access to Leti Si microelectronic and microsystem technology platforms
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Thales (TRT Fr)
~ 50p. 40%
Alcatel Lucent
Bell Labs Fr.
~ 50p. 40%
CEA Leti
20%
R&D contracts
22~35 p/y
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Main research activities and applications
►Opto-electronics ■ Tx/Rx photonic integrated circuits for the next generations of optical-
fibre communication networks : 10x10Gb/s, 40Gb/s and above, 100Gb/s Ethernet
■ IR laser diodes and photonic micro-systems for optronic systems : DIRCM, detection of toxic gases and explosives, microwave links over optical fibres, laser pumping for atomic clocks and cold atoms sensors
■ Advanced IR photo-detectors
►Micro-electronics ■ GaN power HEMT MMIC technology for radars, electronic warfare, and
wireless communication systems
■ InP HBT technology for fast digital and mixed signal circuits : 40Gb/s and above front-end circuits, broadband ADCs, …
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III-V Lab implantation
Alcatel-Lucent /Bell Labs Fr.
Marcoussis
Thales Research and Technology
Palaiseau
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Motivations : Why AlInN/GaN HEMTs ?
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Spontaneous polarization of GaN, InN and AlN
compounds functions of lattice constant
ΔP0 (Cm-2) Piezo (Cm-2) Ns (cm-2)
Al30Ga70N/GaN -1.56∙10-2 -0.98∙10-2 1.58∙1013
In17Al83N/GaN -4.37∙10-2 0 2.73∙1013
In17Al83N/GaN :
- Spontaneous polarization
without lattice mismatch
Spontaneous polarization
higher :
More electrons density
More power density
Lattice match :
Less lag effects ?
Better reliability ?
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Structure of InAlN HEMTs
AlN layer enhances sheet carrier mobility
Sheet resistance # 320 W/sq. – Sheet carrier density ns # 1.5E13cm-2
Structure of studied HEMT
Source : EPFL-UltraGaN Project
@ 5nm -> 50% of the charges @ 11nm -> 85% of the charges
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►Technology for S-Band Applications
Technology for S-Band Applications
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Power Device Manufacturing
2 inch
Device cross section
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Static results
► Idss = 600mA/mm – Idsmax= 800mA/mm @ Vds=+1V
►Gmmax = 330mS/mm @ Vgs=-0.6V
► Ig < 20 µA/mm @ Vds=10V
0.0001
0.001
0.01
0.1
1
10
100
1000
-4 -3 -2 -1 0 1
Ig,I
d(m
A/m
m)
Vgs (V)
Id
Ig 0
50
100
150
200
250
300
350
400
450
500
0
100
200
300
400
500
600
700
800
900
1000
-3 -2.5 -2 -1.5 -1 -0.5 0 0.5 1
Gm
(m
S/m
m)
Id (
mA
/m
m)
Vgs (V)
Gm
Id
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Small Signal Characterization
FT= 15 GHz – FMAG=38 GHz 19 dB of MAG @ 2 GHz
Gm # 300 mS/mm
Gd # 3.2 mS/mm
Cgs # 3.4 pF/mm
Cgd # 0.110 pF/mm
Cds # 0.450 pF/mm
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Large Signal Characterization
5 10 15 20 25 300 35
10
20
30
40
50
60
0
70
Pin (dBm)
Po
ut
(dB
m),
PA
E (
%)
& G
p (
dB
)
Gp
Pout
PAE
1 2 3 4 5 6 7 80 9
10
20
30
40
50
60
0
70
Pout (W/mm)
PA
E (%
)
20V 25V
30V
35V
►On wafer large signal characterization : 2mm device @3.5 GHz
Pout = 39dBm (8W - 4W/mm)
with PAE = 62% and Gp=10.7dB (Vds0=20V – Ids0=60mA - Zl=17+j18 W)
Pout from 4 to 8W/mm with associated PAE from 62% to 53%
(no re-tune at each vds)
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Amplifier realization
RF in
RF out
High K
matching networks
GaN die
diamond
Heat spreader
power package
InAlN/GaN based Power amplifier
Can be measured in single ended or balanced configuration
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L-Band (2GHz) High Power Packaged Amplifiers Measurements
105W - CW reached (Pdiss = 4.5W/mm -> Tchannel = 260°C )
140W - pulsed conditions ( Tchannel = 125°C)
0
2
4
6
8
10
12
0
20
40
60
80
100
120
0 2 4 6 8 10 12 14 16 18
Ga
in (d
B)
Ou
tpu
t p
ow
er (W
) a
nd
PA
E (%
)
Input power (W)
PAE
Pout
Gp
0
2
4
6
8
10
12
14
16
0
20
40
60
80
100
120
140
160
0 2 4 6 8 10 12 14G
ain
(d
B)
Ou
tpu
t p
ow
er (W
) a
nd
PA
E (%
)
Input power (W)
PAE
Pout
Gp
Vds=30V and Ids0=0.1A Vds=30V and Ids0=0.1A.
pulsed 10µs/10%. CW mode.
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First time a transistor operates up to 1000 C !
High Temperature DC Measurements (ULM university – Germany)
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Ultra thin barrier (few nm) InAlN/GaN
heterostructure still working after 1000 C
for 30min step.
Very promising for high robustness
demanding applications.
0 2 4 6 8 100,0
0,1
0,2
0,3
0,4
0,5
0,6
-1 V
0 V
+1 V
+2 V
3.5 nm InAlN device at RT
I D (
A/m
m)
VDS (V)0 2 4 6 8 10
0,0
0,1
0,2
0,3
0,4
0,5
0,63.5 nm InAlN device after 1000°C stress
VDS (V)
I D (
A/m
m)
-1 V
0 V
+1 V
+2 V
-20 -15 -10 -5 0 510
-9
10-8
10-7
10-6
10-5
10-4
10-3
10-2
10-1
100
at RT
Gate voltage (V)
I GS
(m
A/m
m)
after 1000°C
1000°C
Thermal stability of 3 nm barrier InAlN/GaN HEMTs
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►Technology for X to Ka-Band Applications
Technology for X to K-Band Applications
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0.25µm technology - pulsed I-V and Sij results
Pulsed I-V measurements
Idss ~ 1.2A/mm and ~1.4A/mm @ Vgs = 0.5V
Gmmax ~ 450mS/mm
Vp~ 3.8V
0
0.2
0.4
0.6
0.8
1
1.2
1.4
1.6
0 10 20 30 40 50
Id (A
/mm
)
Vds (V)
Vgs = 0.5 V
Vgs = -0.5 V
Vgs = -1.5 V
Vgs = -2.5 V
Vgs = -3.5 V
Vgs = -4.5 V
Polarisation
(Vgs0,Vds0)
Vgs = -4.5 V (0;0)
Vgs = -4.5 V (-4.5;0)
Vgs = -4.5 V (-4.5;25)
8dB/30 GHz
11.5dB/20 GHz
14dB/10 GHz
Fk # 27 GHz
|H21|²
MSG/MAG dB
Frequency (GHz)
0.25µm
FT # 30 GHz
FMAX # 80 GHz
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8x75µm - A-Class (500mA/mm) Vgs0=-2.1V
Vds from 20V to 30V
Output power from 6.6W/mm to 10.8W/mm
PAE from 45% to 40%
Load-Pull measurements @ 10 GHz 250µs pulsed
0
1
2
3
4
5
6
7
8
9
5 10 15 20 25 30
Po
ut
(W)
Pin (dBm)
0
10
20
30
40
50
5 10 15 20 25 30
PAE
(%),
& G
p (
dB
)
Pin (dBm)
6.5W (10.8W/mm)
5.7W (8.7W/mm)
4W (6.6W/mm)
45%
43%
40%
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World first demonstration of 20 GHz CW InAlN/GaN Power amplifier
0
5
10
15
20
25
30
35
40
0 4 8 12 16 20 24 28 32
Pin (dBm)
Gain
(d
B)
, P
ou
t (d
Bm
)0
5
10
15
20
25
PA
E (
%)
Pout meas (dBm)
Pout mod (dBm)
Gain meas (dB)
Gain mod (dB)
PAE meas (%)
PAE mod (%)
20 GHz AlInN/GaN amplifier
In test JIG
20GHz : Pout = 4.5W with 20% PAE and
12B of linear gain
Good comparison with the simulation
Vds1st_stage=18V, Vds2nd_stage=20V, Ids= 250mA/mm,
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►Technology for Fast Switching Applications
Technology for Fast Switching Applications
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Technology for Fast Switching Applications
Enveloppe Tracking
Amplificateur
Modulateur de
polarisation
Puissance de
Polarisation: 50V – 5A
Signal RF modulé
Enveloppe (BP:5MHz):
- Signaux I & Q
- Signal enveloppe
Traitement
Puissance
Alimentation DC
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► Mesures:
■ Rch=500 Ohms, Vdd= 50V, DC = 50%
Fcommut= 50 MHz Fcommut=100MHz
Cellule de commutation Mesures à Vdd=50V, fcommut=50 & 100MHz
10ns 5ns
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Modulateur à 4 niveaux
Fenv=8MHz (Fc=48MHz)
► Mesures d’un signal sinusoïdal fcommutation=6*Fenveloppe
Fenv=3MHz (Fc=18MHz)
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►Technology for Mixed-Signal Applications
Technology for Mixed-Signal Applications
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Technology for Mixed-Signal Applications
TRIQUINT & University of Notre-Dame
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Technology for Mixed-Signal Applications
TRIQUINT & University of Notre-Dame
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Remerciements
Merci de votre attention !
Contacts: