Impurities, Defects and Diffusion in Semiconductors: Bulk...
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Impurities, Defects and Diffusion inSemiconductors: Bulk and Layered Structures
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Cambridge University Press978-1-558-99051-7 - Materials Research Society Symposium Proceedings Volume 163: Impurities, Defects and Diffusion in Semiconductors: Bulk and Layered Structures: Symposium held November 27-December 1, 1989, Boston, Massachusetts, U.S.A.Editors: Donald J. Wolford, Jerzy Bernholc and Eugene E. HallerFrontmatterMore information
www.cambridge.org© in this web service Cambridge University Press
Cambridge University Press978-1-558-99051-7 - Materials Research Society Symposium Proceedings Volume 163: Impurities, Defects and Diffusion in Semiconductors: Bulk and Layered Structures: Symposium held November 27-December 1, 1989, Boston, Massachusetts, U.S.A.Editors: Donald J. Wolford, Jerzy Bernholc and Eugene E. HallerFrontmatterMore information
MATERIALS RESEARCH SOCIETY SYMPOSIUM PROCEEDINGS VOLUME 163
Impurities, Defects and Diffusion inSemiconductors: Bulk and Layered Structures
Symposium held November 27-December 1, 1989, Boston,Massachusetts, U.S.A.
EDITORS:
Donald J. Wolf ordIBM T.J. Watson Research Center, Yorktown Heights, New York, U.S.A.
Jerzy BernholcNorth Carolina State University, Raleigh, North Carolina, U.S.A.
Eugene E. HallerUniversity of California at Berkeley, Berkeley, California, U.S.A.
IMIRTSI MATERIALS RESEARCH SOCIETY
Pittsburgh, Pennsylvania
www.cambridge.org© in this web service Cambridge University Press
Cambridge University Press978-1-558-99051-7 - Materials Research Society Symposium Proceedings Volume 163: Impurities, Defects and Diffusion in Semiconductors: Bulk and Layered Structures: Symposium held November 27-December 1, 1989, Boston, Massachusetts, U.S.A.Editors: Donald J. Wolford, Jerzy Bernholc and Eugene E. HallerFrontmatterMore information
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Cambridge University Press978-1-558-99051-7 - Materials Research Society Symposium Proceedings Volume 163: Impurities, Defects and Diffusion in Semiconductors: Bulk and Layered Structures: Symposium held November 27-December 1, 1989, Boston, Massachusetts, U.S.A.Editors: Donald J. Wolford, Jerzy Bernholc and Eugene E. HallerFrontmatterMore information
Contents
PREFACE xxi
ACKNOWLEDGMENT S
MATERIALS RESEARCH SOCIETY SYMPOSIUM PROCEEDINGS
PART I: ELECTRONIC STRUCTURE - DEEP LEVELS
•HIGH-RESOLUTION SPECTROSCOPY OF POINT DEFECTS IN SILICON 3H.G. Grimmeiss, M. Kleverman, and J. Olajos
INFRARED ABSORPTION STUDY OF ZINC-DOPED SILICON 15E. Merk, J. Heyman, and E.E. Haller
INFRARED STUDIES OF THE DOUBLE ACCEPTOR ZINC IN SILICON 21A. Dornen, R. Kienle, K. Thonke, P. Stolz,G. Pensl, D. Grunebaum, and N.A. Stolwijk
PRESSURE DEPENDENCE OF A DEEP EXCITONIC LEVEL INSILICON 27
G.A. Northrop and D.J. Wolford
ODMR OF SHALLOW DONORS IN Zn-DOPED LEC-GROWN InP 33J.M. Trombetta and T.A. Kennedy
•COMPLEX DEFECTS IN SEMICONDUCTORS 39B. Monemar
THE ELECTRONIC STRUCTURE OF INTERSTITIAL IRON INSILICON 51
A. Thilderkvist, G. Grossmann, M. Kleverman,and H.G. Grimmeiss
DISLOCATION RELATED D-BAND LUMINESCENCE; THE EFFECTSOF TRANSITION METAL CONTAMINATION 57
Victor Higgs, E.C. Lightowlers, and P. Kightley
PHOTOLUMINESCENCE EXCITATION SPECTROSCOPY OF MOCVD-GROWN: GaAs:V 63
Y.J. Kao, N.M. Haegel, and W.S. Hobson
RADIATIVE AND NON-RADIATIVE RECOMBINATIONS AT ErCENTERS IN GaAlAs 69
Taha Benyattou, Djelloul Seghier, GerardGuillot, Richard Moncorge, Pierre Galtier, andMarie-Noelle Charasse
•Invited Paper
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Cambridge University Press978-1-558-99051-7 - Materials Research Society Symposium Proceedings Volume 163: Impurities, Defects and Diffusion in Semiconductors: Bulk and Layered Structures: Symposium held November 27-December 1, 1989, Boston, Massachusetts, U.S.A.Editors: Donald J. Wolford, Jerzy Bernholc and Eugene E. HallerFrontmatterMore information
CHARACTERIZATION OF DEEP-LEVEL DEFECTS IN SEMI-INSULATING GaAs AND InP BY PHOTOINDUCED TRANSIENTSPECTROSCOPY (PITS) 75
Pawel Kaminski
ELECTRONIC STRUCTURE OF Li-IMPURITIES IN ZnSe 81T. Oguchi, T. Sasaki, and H. Katayama-Yoshida
MODIFIED OPTICALLY DETECTED MAGNETIC RESONANCETECHNIQUE FOR STUDIES OF DEFECTS IN Si AND GaAs 85
W.M. Chen and B. Monemar
NITROGEN AND PHOSPHOROUS IMPURITIES IN DIAMOND 89Koblar Jackson, Mark R. Pederson, andJoseph G. Harrison
PART II: ELECTRONIC STRUCTURE - SHALLOW IMPURITIES
•RADIATIVE RECOMBINATION AND CARRIER LIFETIMES INSURFACE-FREE GaAs HOMOSTRUCTURES 9 5
L.M. Smith, D.J. Wolford, R. Venkatasubramanian,and S.K. Ghandhi
EVIDENCE FOR STRONG TRAPPING BY IONIZED DONORS OF FREEEXCITONS IN EXCITED STATES FOR HIGH PURITY GaAs ANDAlGaAs 109
S. Zemon and G. Lambert
FORMATION OF THREE RED-SHIFT EMISSIONS IN HEAVILYGERMANIUM-DOPED P-TYPE GaAs GROWN BY MBE 115
Y. Makita, A. Yamada, H. Shibata, H. Asakura,N. Ohnishi, A.C. Beye, K.M. Mayer, andN. Kutsuwada
ELECTRICAL PROPERTIES OF HEAVILY Be-DOPED GaAs GROWNBY MOLECULAR BEAM EPITAXY 121
H. Shibata, Y. Makita, A. Yamada, N. Ohnishi,M. Mori, Y. Nakayama, A.C. Beye, K.M. Mayer,T. Takahashi, Y. Sugiyama, M. Tacano, K. Ishituka,and T. Matsumori
PHOTOLUMINESCENCE STUDY OF GaAs DIFFUSED WITH Li 127H.P. Gislason, E.G. Sveinbjornsson, B. Monemar,and M. Linnarsson
LASER-THERMAL IMPURITY PUMPING OF SHALLOW DONORS INULTRAPURE GERMANIUM 133
T. Theiler, F. Keilmann, and E.E. Haller
ELECTRICAL AND PHOTOLUMINESCENCE PROPERTIES OF Mg+
AND C+ IMPLANTED ACCEPTORS IN InP 139A.C. Beye, A. Yamada, A. Shimizu, H. Shibata,H. Tanoue, K.M. Mayer, H. Sugiyama, K. Kamijoh,T. Oda, O. Arriga, I. Akiyama, N. Kutsuwada,T. Matsumori, S. Uekusa, and Y. Makita
•Invited Paper
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Cambridge University Press978-1-558-99051-7 - Materials Research Society Symposium Proceedings Volume 163: Impurities, Defects and Diffusion in Semiconductors: Bulk and Layered Structures: Symposium held November 27-December 1, 1989, Boston, Massachusetts, U.S.A.Editors: Donald J. Wolford, Jerzy Bernholc and Eugene E. HallerFrontmatterMore information
PART III: ELECTRONIC STRUCTURES - NATIVEDEFECTS, COMPLEXES, TRANSITION METALS IN COMPOUNDS
OPTICALLY DETECTED MAGNETIC RESONANCE OF SULFUR DOPEDGALLIUM PHOSPHIDE 145
K.L. Brower
THE ROLE OF OXYGEN IN p-TYPE InP 151J. Michel, J. Jeong, K.M. Lee, and L.C. Kimerling
MID-INFRARED SPECTRAL PHOTORESPONSE OF SEMI-INSULATINGGaAs 157
G.J. Brown and W.C. Mitchel
CORRELATION OF THE 0.8 eV EMISSION BAND WITH THE EL6CENTER IN GaAs 163
S. Alaya, M.A. Zaidi, G. Marrakchi, H. Maaref,H.J, von Bardeleben, and J.C. Bourgoin
THE ELECTRONIC STRUCTURE OF THE "0.15 eV" Cu ACCEPTORLEVEL IN GaAs 169
E. Janzen, M. Linnarsson, B. Monemar, andM. Kleverman
OPTICAL ABSORPTION OF DEEP DEFECTS IN NEUTRONIRRADIATED SEMI-INSULATING GaAs 175
M.O. Manasreh and P.J. Pearah
NEW, GERMANIUM - RELATED DEFECT IN NEUTRON - IRRADIATEDGALLIUM PHOSPHIDE 179
J. Barczynska and E. Goldys
DEEP LEVEL LUMINESCENCE IN InP: PHONON FEATURE ANALYSIS 185S. Banerjee, A.K. Srivastava, and B.M. Arora
THE NATURE OF NATIVE DEFECTS IN LEC GROWN SEMI-INSULATING GaAs BY THERMALLY STIMULATED CURRENTSPECTROSCOPY 189
Zhaoqiang Fang, Lei Shan, T.E. Schlesinger, andA.G. Milnes
ANOMALOUS LUMINESCENCE PROPERTIES OF GaAs GROWN BYMOLECULAR BEAM EPITAXY 19 3
I. Szafranek, M.A. Piano, M.J. McCollum,S.L. Jackson, S.A. Stockman, K.Y. Cheng, andG.E. Stillman
COMPARATIVE OPTICAL STUDIES OF Cu, Mn, AND C IMPURITIESIN BULK LEC GROWN GaAs BY ELECTRON BEAM ELECTROREFLEC-TANCE (EBER) AND PHOTOLUMINESCENCE (PL) 197
M.H. Herman, P.J. Pearah, K. Elcess, and I.D. Ward
Ge RELATED DEEP LEVEL LUMINESCENCE IN InGaAs LATTICEMATCHED TO InP 203
S.S. Chandvankar, A.K. Srivastava, B.M. Arora,and D.K. Sharma
THE DEEP 0.1leV MANGANESE ACCEPTOR LEVEL IN GaAs 2 07M. Kleverman, E. Janzen, M. Linnarsson, andB. Monemar
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Cambridge University Press978-1-558-99051-7 - Materials Research Society Symposium Proceedings Volume 163: Impurities, Defects and Diffusion in Semiconductors: Bulk and Layered Structures: Symposium held November 27-December 1, 1989, Boston, Massachusetts, U.S.A.Editors: Donald J. Wolford, Jerzy Bernholc and Eugene E. HallerFrontmatterMore information
IDENTIFICATION OF SURFACE-RELATED ELECTRON TRAPS INUNDOPED GaAs BY DEEP LEVEL TRANSIENT SPECTROSCOPY 211
Ki-Chul Shin and In-Shik Park
LUMINESCENCE DUE TO Mn DOPED GaP 215Teresa Monteiro and Estela Pereira
PART IV: ELECTRONIC STRUCTURE - COMPLEXES IN SILICON
*HIGH PERFORMANCE PHOTOLUMINESCENCE SPECTROSCOPY USINGFOURIER TRANSFORM INTERFEROMETRY 221
M.L.W. Thewalt, M.K. Nissen, D.J.S. Beckett, andK.R. Lundgren
GENERATION AND DISSOCIATION OF IRON-BORON PAIRS INSILICON 233
Masashi Suezawa and Koji Sumino
PHOTOCONDUCTIVITY STUDY OF CrB AND Cr. IN SILICON 239A. Schlette, R. Kienle, A. Do men* W. Kiirner,and K. Thonke
•FORMATION OF In-Cu PAIRS IN SILICON DURING CHEMO-MECHANICAL POLISHING 245
Th. Wichert, R. Keller, M. Deicher, W. Pfeiffer,H. Skudlik, and D. Steiner
STRAIN INDUCED INTRINSIC QUANTUM WELLS AS THE ORIGINOF BROAD BAND PHOTOLUMINESCENCE IN SILICON CONTAININGEXTENDED DEFECTS 257
H. Weman and B. Monemar
OPTICAL PROPERTIES OF NOVEL VIBRONIC BANDS IN ELECTRON-IRRADIATED TIN DOPED SILICON 261
J.H. Svensson, B. Monemar, and B.G. Svensson
A NEW METASTABLE DEFECT IN SILICON, OPTICAL PROPERTIESAND AN INVESTIGATION OF THE MECHANISM CAUSING THECONFIGURATIONAL CHANGE 265
J.H. Svensson and B. Monemar
NOVEL LUMINESCENCE BAND IN SILICON IMPLANTED WITHPHOSPHORUS AND BORON 269
A.K. Srivastava, D.K. Sharma, K.L. Narasimhan,D. Sarkar, and V. Premchandran
UNIAXIAL STRESS AND ZEEMAN MEASUREMENTS ON THE 943 meVLUMINESCENCE BAND IN SILICON 273
M.C. Carmo, K.G. McGuigan, M.O. Henry, G. Davies,and E.C. Lightowlers
IDENTIFICATION OF RADIATION-INDUCED DEFECTS IN Si:Al 277Ya.I. Latushko and V.V. Petrov
•Invited Paper
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Cambridge University Press978-1-558-99051-7 - Materials Research Society Symposium Proceedings Volume 163: Impurities, Defects and Diffusion in Semiconductors: Bulk and Layered Structures: Symposium held November 27-December 1, 1989, Boston, Massachusetts, U.S.A.Editors: Donald J. Wolford, Jerzy Bernholc and Eugene E. HallerFrontmatterMore information
DEFECT-FORMATION DEPENDENCE ON GROUP V-DOPANT ATOMS INELECTRON-IRRADIATED SILICON 283
O.O. Awadelkarim, A. Henry, B. Monemar, andJ.L. LindstrSm
ELECTRONIC STRUCTURE OF VACANCY-PHOSPHORUS IMPURITYCOMPLEXES IN SILICON 287
Hongqi Xu and U. Lindefelt
NEW DLTS PEAKS ASSOCIATED WITH NEW DONORS AND RODLIKEDEFECTS IN CZOCHRALSKI SILICON 291
Yoichi Kamiura, Fumio Hashimoto, and Minoru Yoneta
MULTICONFIGURATIONAL CARBON-GROUP V PAIR DEFECTS INSILICON 295
E. Giirer and B.W. Benson
EXCITONIC RECOMBINATION AT A TRANSITION-METAL RELATEDDEFECT IN SILICON 299
K.G. McGuigan, M.O. Henry, E.C. Lightowlers,and M.H. Nazare
ELECTRONIC STRUCTURE OF TWO SULPHUR-RELATED BOUNDEXCITONS IN SILICON STUDIED BY OPTICAL DETECTION OFMAGNETIC RESONANCE 303
W.M. Chen, A. Henry, E. Janzen, B. Monemar,and M.L.W. Thewalt
AN ELECTRON PARAMAGNETIC RESONANCE INVESTIGATION OFIRON-INDIUM PAIRS IN SILICON 307
P. Emanuelsson, W. Gehlhoff, P. Omling, andH.G. Grimmeiss
PART V: ELECTRONIC STRUCTURE - SUPERLATTICES
•LIGHT- AND HEAVY-HOLE BOUND EXCITON TRANSITIONS ANDFREE TO BOUND TRANSITIONS IN Ga Al, As/GaAs QUANTUMWELLS x i x 3 1 3
Donald C. Reynolds and K.K. Bajaj
DECAY MEASUREMENTS OF FREE AND BOUND EXCITON RECOM-BINATION IN DOPED GaAs/GaAlAs QUANTUM WELLS 325
J.P. Bergman, P.O. Holtz, B. Monemar,M. Sundaram, J.L. Merz, and A.C. Gossard
EFFECTS OF CONFINEMENT ON THE OPTICAL PROPERTIES OFA SHALLOW ACCEPTOR AND ITS BOUND EXCITON IN NARROWGaAs/AlGaAs QUANTUM WELLS 331
P.O. Holtz, M. Sundaram, G.C. Rune, B. Monemar,J.L. Merz, and A.C. Gossard
INTRINSIC LUMINESCENCE OF GaAs/AlGaAs HETEROJUNCTIONSIN A TRANSVERSE ELECTRIC FIELD 337
Q.X. Zhao, J.P. Bergman, P.O. Holtz, B. Monemar,C. Hallin, M. Sundaram, J.L. Merz, and A.C. Gossard
•Invited Paper
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Cambridge University Press978-1-558-99051-7 - Materials Research Society Symposium Proceedings Volume 163: Impurities, Defects and Diffusion in Semiconductors: Bulk and Layered Structures: Symposium held November 27-December 1, 1989, Boston, Massachusetts, U.S.A.Editors: Donald J. Wolford, Jerzy Bernholc and Eugene E. HallerFrontmatterMore information
DEFECT INDUCED LUMINESCENCE FROM MBE PREPAREDSi/Si!-.xGex SUPERLATTICES 343
G.A. Northrop, S.S. Iyer, and D.J. Wolford
DEEP LEVELS IN SUPERLATTICES 349John D. Dow, Shang Yuan Ren, Jun Shen, andMin-Hsiung Tsai
QUALITATIVE PHYSICS OF DEFECTS IN QUANTUM WELLS:INTERFACE ROUGHNESS 361
Harold P. Hjalmarson
PART VI: HYDROGEN IN SILICON
*FERMI RESONANCE EFFECTS ON THE VIBRATION MODES OFHYDROGEN-PASSIVATED BORON IN SILICON 367
G.D. Watkins, W.B. Fowler, G.G. Deleo, M. Stavola,D.M. Kozuch, S.J. Pearton, and J. Lopata
OPTICALLY DETECTED MAGNETIC RESONANCE OF A HYDROGEN-RELATED COMPLEX DEFECT IN SILICON 377
W.M. Chen, O.O. Awadelkarim, B. Monemar,J.L. Lindstrom, and G.S. Oehrlein
•HYDROGEN IN CRYSTALLINE AND AMORPHOUS SILICON 383Guido L. Chiarotti, F. Buda, R. Car, andM. Parrinello
HYDROGEN DIFFUSION IN BORON-DOPED SILICON 39 5C.P. Herrero, M. Stutzmann, and A. Breitschwerdt
MODELING OF THE DIFFUSION OF HYDROGEN IN SILICON 401D. Mathiot, D. Ballutaud, P. De Mierry, andM. Aucouturier
•STRUCTURE AND METASTABILITY OF MUONIUM CENTERS INSEMICONDUCTORS AND THEIR SIMULATION OF ISOLATEDHYDROGEN CENTERS 407
T.L. Estle, R.F. Kiefl, J.W. Schneider, andC. Schwab
ELECTRONIC STRUCTURE AND HYPERFINE PARAMETERS FORHYDROGEN AND MUONIUM IN SILICON 419
Chris G. Van de Walle
HYDROGEN IN CRYSTALLINE SILICON UNDER COMPRESSION ANDTENSION 425
C.S. Nichols and D.R. Clarke
ANALYSIS OF REAL-TIME HYDROGENATION DATA FROM P ANDN-TYPE SILICON 431
Carleton H. Seager and Robert A. Anderson
HYDROGEN SEGREGATION AT THE Al/Si INTERFACE STUDIEDUSING A NUCLEAR RESONANT REACTION 437
Joyce C. Liu, A.D. Marwick, and F.K. Legoues
•Invited Paper
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Cambridge University Press978-1-558-99051-7 - Materials Research Society Symposium Proceedings Volume 163: Impurities, Defects and Diffusion in Semiconductors: Bulk and Layered Structures: Symposium held November 27-December 1, 1989, Boston, Massachusetts, U.S.A.Editors: Donald J. Wolford, Jerzy Bernholc and Eugene E. HallerFrontmatterMore information
DISSOCIATION KINETICS OF SHALLOW-ACCEPTOR-HYDROGENPAIRS IN SILICON 443
T. Zundel and J. Weber
HYDROGEN INDUCED DEFECTS AT SILICON SURFACES AND BURIEDEPITAXIAL MISFIT DISLOCATION INTERFACES 449
Tian-Qun Zhou, Zbigniew Radzimski, Zhigang Xiao,Bhushan Sopori, and George A. Rozgonyi
SURFACE AND BULK PROPERTIES WHICH INFLUENCE ION-BEAMHYDROGENATION OF SILICON 455
Robert A. Anderson and Carleton H. Seager
HYDROGEN PASSIVATION STUDIES IN DISLOCATED CZ AND FZSILICON 459
C. Dube, J.P. Kalejs, and S. Rajendran
PART VII: HYDROGEN IN III-Vs
•HYDROGEN COMPLEXES IN III-V SEMICONDUCTORS 465Bernard Pajot
Sn-H COMPLEX IN HYDROGEN PASSIVATED GaAs 477D.M. Kozuch, Michael Stavola, S.J. Pearton,C.R. Abernathy, and J. Lopata
REASSESSMENT OF ACCEPTOR PASSIVATION MODELS IN p-TYPEHYDROGENATED GaAs 483
I. Szafranek and G.E. Stillman
HYDROGEN PASSIVATION OF INTERFACIAL DEFECTS IN MOCVDGROWN GaAs/InP 489
V. Swaminathan, U.K. Chakrabarti, W.S. Hobson,R. Caruso, J. Lopata, and S.J. Pearton
PASSIVATION OF Zn-ACCEPTORS IN InGaAs DURING RIE WITHCHF3/H2 AND CH4/H2 495
Martin Mohrle
SURFACE PROTECTION DURING PLASMA HYDROGENATION FORACCEPTOR PASSIVATION IN InP 501
J. Lopata, W.C. Dautremont-Smith, S.J. Pearton,J.W. Lee, N.T. Ha, and H.S. Luftman
PART VIII: DIFFUSION IN SILICON AND GERMANIUM
•ATOMIC DIFFUSION PROCESSES IN SILICON 511Sokrates T. Pantelides
PRESSURE AND STRAIN EFFECTS ON DIFFUSION 523A. Antonelli and J. Bernholc
LOW-TEMPERATURE DIFFUSION OF DOPANTS IN SILICON 529P. Fahey and M. Wittmer
•Invited Paper
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Cambridge University Press978-1-558-99051-7 - Materials Research Society Symposium Proceedings Volume 163: Impurities, Defects and Diffusion in Semiconductors: Bulk and Layered Structures: Symposium held November 27-December 1, 1989, Boston, Massachusetts, U.S.A.Editors: Donald J. Wolford, Jerzy Bernholc and Eugene E. HallerFrontmatterMore information
DETERMINATION OF DIFFUSION PARAMETERS FOR ARSENIC 535Michael Heinrich, Matthias Budil, andHans W. Potzl
MEASUREMENTS OF ENHANCED DIFFUSION OF BURIED LAYERSIN SILICON MEMBRANE STRUCTURES DURING OXIDATION 543
Scott T. Dunham, Anuradha M. Agarwal, andNanseng Jeng
MIGRATIONS OF INTERSTITIAL ATOMS IN SEMICONDUCTORS(SURFACE DIFFUSION AND KICK-OUT MECHANISM) 549
Takao Wada, Akihiro Takeda, Masaya Ichimura,and Michihiko Takeda
MEASUREMENTS OF ENHANCED OXYGEN DIFFUSION IN SILICONDURING THERMAL DONOR FORMATION: NEW EVIDENCE FORPOSSIBLE MECHANISMS 555
A.R. Brown, R. Murray, R.C. Newman, andJ.H. Tucker
A STEADY-STATE MODEL FOR COUPLED DEFECT IMPURITYDIFFUSION IN SILICON 561
F . F . Morehead and R .F . Lever
HIGH AND LCW TEMPERATURE MEASUREMENTS OF THE CHROMIUMDIFFUSIVITY IN SILICON 567
J . Zhu and D. B a r b i e r
THE FORMATION OF SILICON-RICH SILICIDES 573Mar ia Ronay and R.G. Schad
PRECIPITATION OF COPPER AND COBALT AT GRAIN BOUNDARIESIN SILICON 579
U. J e n d r i c h and H . J . Mol le r
ANNEALING OF ION IMPLANTED TIN IN SILICON: A RBS/CHANNELING, MOSSBAUER SPECTROSCOPY AND TEM INVESTIGA-TION OF SOLUBILITY AND RESIDUAL DEFECTS 585
P. Kringhtfj , A. Nylands ted La r sen , and J.W.Petersen
EXTREME SUPERSATURATION OF OXYGEN IN LOW TEMPERATUREEPITAXIAL SILICON AND SILICON-GERMANIUM ALLOYS 591
P.V. Schwartz, J.C. Sturm, P.M. Garone, andS.A. Schwarz
AN ANOMALOUS VACANCY DIFFUSION IN SILICON DURING THEANTIMONY DRIVE-IN DIFFUSION 597
W. Wijaranakula and J.H. Matlock
A COMPARISON OF THE DIFFUSIVITY OF As AND Ge IN Si ATHIGH DONOR CONCENTRATIONS 601
K. Kyllesbech Larsen, P. Gaiduk, and A. NylandstedLarsen
ANOMALOUS TRANSIENT TAIL DIFFUSION OF BORON IN SILICON:KINETIC MODELING OF DIFFUSION AND CLUSTER FORMATION 605
N.E.B. Cowern, H.F.F. Jos, K.T.F. Janssen, andA.J.H. Wachters
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Cambridge University Press978-1-558-99051-7 - Materials Research Society Symposium Proceedings Volume 163: Impurities, Defects and Diffusion in Semiconductors: Bulk and Layered Structures: Symposium held November 27-December 1, 1989, Boston, Massachusetts, U.S.A.Editors: Donald J. Wolford, Jerzy Bernholc and Eugene E. HallerFrontmatterMore information
FAILURE OF THE "KICK-OUT" MODEL FOR THE DIFFUSION OFAu INTO Si WHEN TESTED BY MONTE CARLO SIMULATION 609
U. Schmid, J.A. Van Vechten, N.C. Myers, andU. Koch
DIFFUSION OF POINT DEFECTS IN A STRESSED SIMPLE CUBICLATTICE 615
Dimitrios Maroudas and Robert A. Brown
THE ENHANCEMENT OF THE INTERDIFFUSION IN Si/Ge AMORPHOUSARTIFICIAL MULTILAYERS BY ADDITIONS OF B AND Au 621
B. Park, F. Spaepen, J.M. Poate, and D.C. Jacobson
DIFFUSION OF Au IN AMORPHOUS Si MEASURED BY THEARTIFICIAL MULTILAYER TECHNIQUE 627
E. Nygren, B. Park, L.M. Goldman, D.T. Wu,A.V. Wagner, and F. Spaepen
HYDROGEN DIFFUSION AND COMPLEX FORMATION IN SILICON 633J.T. Borenstein, D. Tulchinski, and J.W. Corbett
PART IX: DIFFUSION IN COMPOUNDS
•DIFFUSION AND INTERDIFFUSION IN MULTILAYERED SEMI-CONDUCTOR SYSTEMS 639
A. Ourmazd, Y. Kim, and M. Bode
ATOMIC LAYER EPITAXY OF GaAs ON Ge SUBSTRATES 647J. Ramdani, B.T. McDermott, and S.M. Bedair
DIFFUSION OF ION IMPLANTED Mg AND Be IN GaAs 65 3H.G. Robinson, M.D. Deal, and D.A. Stevenson
DEFECT FORMATION DURING Zn DIFFUSION INTO GaAs 659Martina Luysberg, W. Jager, K. Urban, M. Perret,N.A. Stolwijk, and H. Mehrer
ROOM-TEMPERATURE DIFFUSION OF Mn IN CdTe AND THEFORMATION OF Cd!_xMnxTe 665
A. Wall, A. Raisanen, G. Haugstad, andA. Franciosi
AN EXAMINATION OF THE MECHANISMS OF Si DIFFUSION INGaAs 671
Shaofeng Yu, Ulrich M. Gosele, and Teh Y. Tan
DIFFUSION OF Ga VACANCIES AND Si IN GaAs 677K.B. Kahen, D.J. Lawrence, D.L. Peterson, andG. Rajeswaran
MECHANISM FOR THE DIFFUSION OF ZINC IN GALLIUM ARSENIDE 681K.B. Kahen
DIFFUSION OF ION-IMPLANTED TIN IN GALLIUM ARSENIDE 685E.L. Allen, M.D. Deal, and J.D. Plummer
*Invited Paper
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THE ROLE OF CHARGED POINT DEFECTS ON THE DIFFUSIONBEHAVIOR OF SILICON IN GaAs 691
Jeffrey J. Murray, Michael D. Deal, andDavid A. Stevenson
PART X: DIFFUSION IN SUPERLATTICES
•IMPURITY-INDUCED LAYER DISORDERING: CURRENT UNDER-STANDING AND AREAS FOR FUTURE INVESTIGATION 697
L.J. Guido and Nick Holonyak, Jr.
BEHAVIOR OF DOPANT-RELATED DEFECTS IN AlGaAs SUPER-LATTICES 709
N.D. Theodore, P. Mei, S.A. Schwarz, C.B. Carter,C. Palmstrom, J.P. Harbison, and L.T. Florez
•DIFFUSION IN GALLIUM ARSENIDE AND GaAs-BASED LAYEREDSTRUCTURES 715
U. GSsele, T.Y. Tan, and Shaofeng Yu
PART XI: DX CENTERS
*THE DX CENTER: EVIDENCE FOR CHARGE CAPTURE VIA ANEXCITED INTERMEDIATE STATE 729
Thomas N. Theis and Patricia M. Mooney
EFFECT OF LOCAL ATOMIC CONFIGURATION ON DX ENERGYLEVEL 741
T. Baba, M. Mizuta, T. Fujisawa, J. Yoshino,and H. Kukimoto
ELECTRIC FIELD ENHANCEMENT OF ELECTRON EMISSION FROMDX CENTERS AND CONSEQUENCES 747
J.C. Bourgoin, M. Zazoui, S.L. Feng, H.J. vonBardeleben, S. Alaya, and H. Maaref
OPTICALLY DETECTED MAGNETIC RESONANCE OF GROUP IV ANDGROUP VI DONORS IN AIQ.6 G a 0.4As/GaAs HETEROSTRUCTURES 753
E. Glaser, T.A. Kennedy, B. Molnar, and M. Mizuta
PHOTOLUMINESCENCE AND BANDGAP NARROWING IN HEAVILYDOPED iv-GaAs 759
H.D. Yao and A. Compaan
•THEORY OF DX CENTERS IN Al x G ai_ x ALLOYS 7 65D.J. Chadi and S.B. Zhang
A PHOTOCAPTURE TEST OF DX-CENTER MODELS 773Harold P. Hjalmarson, S.R. Kurtz, and T.M.Brennan
DX-CENTER IN Se-DOPED AlxGai_xAs 781Thomas R. Hanak, Assem M. Bakry, Richard K.Ahrenkiel, and Michael L. Timmons
•Invited Paper
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POOLE FRENKEL EFFECT ON THE DX CENTERS IN III-V TERNARYALLOYS 785
H. Altelarrea, J. Bosch, A. Perez, J. Samitier,and J.R. Morante
TRANSIENT CURRENT AND TRANSIENT CAPACITANCE MEASUREMENTSOF DEFECTS IN AlGaAs HEMTS 789
R. Magno and R. Shelby
ELECTRONIC AND OPTICAL PROPERTIES OF DEEP DONORS INHYDROGENATED AlxGai_x-As:Si 793
R. Mostefaoui, R. Legros, J. Chevallier, C.W. Tu,and R.F. Kopf
PART XII: EL2 CENTERS
THE METASTABILITY OF THE EL2 AND DX DEFECTS IN GaAs AND3-5 ALLOYS 799
H.J. von Bardeleben and J.C. Bourgoin
•PROGRESS IN UNDERSTANDING THE OPTICAL PROPERTIES OF EL2 805G.A. Baraff
THE DOUBLE DONOR ISSUE OF THE EL2 DEFECT IN GaAs 809M.O. Manasreh and G.J. Brown
ABSOLUTE PRESSURE DEPENDENCE OF THE SECOND IONIZATIONLEVEL OF EL2 IN GaAs 815
D.E. Bliss, W. Walukiewicz, D.D. Nolte, andE.E. Haller
*THE SYMMETRY OF THE EL2 DEFECT IN GaAs 821P. Trautman and J.M. Baranowski
RECOVERY FROM THE METASTABLE EL2 DEFECT IN GaAS UNDERMONOCHROMATIC LIGHT ILLUMINATION 827
M.O. Manasreh and D.W. Fischer
EL-2 DEFECT FORMATION AND CARBON INCORPORATION IN GaAsGRCWN BY ORGANOMETALLIC VAPOR PHASE EPITAXY 831
R. Venkatasubramanian, J.M. Borrego, andS.K. Ghandhi
THE ROLE OF EL2 FOR THE MOBILITY-LIFETIME PRODUCT OFPHOTOEXCITED ELECTRONS IN GaAs 837
G.C. Valley, H.J. von Bardeleben, andH. Rajbenbach
PART XIII: DOPING IN III-Vs
•ELECTRON SCATTERING BY NATIVE DEFECTS IN UNIFORMLY ANDMODULATION DOPED SEMICONDUCTOR STRUCTURES 845
W. Walukiewicz
•Invited Paper
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ACCEPTOR DELTA-DOPING IN GaAs 855W.S. Hobson, S.J. Pearton, C.R. Abernathy, andG. Cabaniss
PRECIPITATION PHENOMEJtfA ASSOCIATED WITH ULTRA-HIGH BeDOPING IN Gao.47Ino.53P LAYERS GROWN BY MBE 861
C M . Cotell, M.B. Panish, R.A. Hamm, L.C. Hopkins,and J.M. Gibson
CHARACTERISTICS OF DOPING AND DIFFUSION OF HEAVILY DOPEDN AND P TYPE InP AND InGaAs EPITAXIAL LAYERS GROWN BYMETAL ORGANIC CHEMICAL VAPOR DEPOSITION 867
C.J. Pinzone, N.T. Ha, N.D. Gerrard, R.D. Dupuis,and H.S. Luftman
EFFECTS OF Si INCORPORATION AND ELECTRICAL ACTIVATION ONINTERSUBBAND OPTICAL ABSORPTION IN MBE-GROWN GaAs/AlGaAsMULTIPLE QUANTUM WELL STRUCTURES 875
J.D. Ralston, H. Ennen, M. Maier, M. Ramsteiner,B. Dischler, P. Koidl, and P. Hiesinger
BERYLLIUM DOING IN MBE-GROWN GaAs AND AlGaAs 881Joseph Pellegrino, James Griffin, Leary Myers,and Michael Spencer
CARBON DOPING IN InGaAs GROWN BY MBE 887Hiroshi Ito and Tadao Ishibashi
PART XIV: ORDERING IN ALLOYS
•ORDERING IN III/V ALLOYS 893G.B. Stringfellow
COMPARISON OF ORDERED AND MODULATED STRUCTURES INInGaP ALLOY SEMICONDUCTORS GROWN BY MOCVD, CHLORIDE-VPE AND LPE METHODS 901
0. Ueda, T. Kato, T. Matsumoto, M. Hoshino,M. Takechi, and M. Ozeki
ATOMIC ORDERING AND ALLOY CLUSTERING IN MBE-GROWNInASySbi_y EPITAXIAL LAYERS 907
Tae-Yeon Seong, A.G. Norman, G.R. Booker,R. Droopad, R.L. Williams, S.D. Parker,P.D. Wang, and R.A. Stradling
PART XV: PROCESSING OF SILICON AND GERMANIUM
RAPID THERMAL PROCESS-INDUCED DEFECTS: GETTERING OFINTERNAL CONTAMINANTS 915
Bouchaib Hartiti, Wolfgang Eichhammer, Jean-Claude Muller, and Paul Siffert
•Invited Paper
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OXYGEN AND IRON REDISTRIBUTION UPON THERMAL TREATMENTIN IRON IMPLANTED SILICON 919
B. Pivac, A. Borghesi, L. Ottolini, M. Geddo,A. Piaggi, and A. Stella
ION BEAM ETCHING OF SILICON: IMPLANTATION AND DIFFUSIONOF NOBLE GAS ATOMS, AND GETTERING OF COPPER 923
William D. Sawyer, J6rg Schm'alzlin, and Jorg Weber
ANGLE RESOLVED XPS ANALYSIS OF SURFACE REGION DEFECTS INRAPID THERMAL ANNEALED ANTIMONY IMPLANTED SILICON 927
S.N, Kumar, G. Chaussemy, A. Laugier, B. Canut,and M. Charbonnier
DEFECTS IN MBE-GROWN SILICON EPILAYERS STUDIED WITHVARIABLE-ENERGY POSITRONS 931
P.J. Simpson, P.J. Schultz, I.V. Mitchell,T.E. Jackman, and G.C. Aers
A HVEM STUDY OF THE ELECTRON IRRADIATED DEFECTS INNITROGEN DOPED FZ-Si SINGLE CRYSTAL 937
Gao Yuzun and T. Takeyama
MOLECULAR DYNAMICS STUDIES OF DISLOCATIONS IN Si 941M.S. Duesbery, D.J. Michel, and B. Joos
A TEM INVESTIGATION OF SECONDARY DISLOCATIONS IN GRAINBOUNDARIES IN GERMANIUM 945
M. Griess, M. Seibt, and H.J. Moller
AC PHOTOVOLTAIC INSPECTION OF P-N JUNCTIONS HAVING HIGHLEAKAGE CURRENT 951
N. Honma, H. Shimizu, C. Munakata, and M. Ogasawara
TWINNING STRUCTURE OF {113} DEFECTS IN HIGH-DOSE OXYGENIMPLANTED SILICON-ON-INSULATOR MATERIAL 9 55
S. Visitserngtrakul, J. Barry, and S. Krause
STRUCTURAL TRANSITIONS IN TITANIUM/AMORPHOUS-SILICONMULTILAYERS 961
E. Ma, L.A. Clevenger, C.V. Thompson, R.R.DeAvillez, and K.N. Tu
STUDIES OF THE EARLY OXIDATION OF SILICON (111) INATOMIC OXYGEN 965
Bhola N. De, Jane Hruska, Jane Peterkin, YongZhao, and John A. Woollam
ENHANCEMENT OF OXYGEN PRECIPITATION IN QUENCHEDCZOCHRALSKI SILICON CRYSTALS 969
A. Hara, T. Fukuda, I. Hirai, and A. Ohsawa
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PART XVI: PROCESSING OF COMPOUNDS
BURIED AMORPHOUS LAYER IN GALLIUM ARSENIDE 975D. Sengupta, M.C. Ridgway, J.M. Zemanski, andS.T. Johnson
DEFECT LEVELS IN THE NEAR-SURFACE REGION OF 2.0 MeV16O+ ION IMPLANTED n-GaAs 979
C.C. Tin, P.A. Barnes, T.T. Bardin, andJ.G. Pronko
CORRELATION OF VOID FORMATION WITH THE REDUCTION OFCARRIER ACTIVATION AND ANOMALOUS DOPANT DIFFUSION INSi-IMPLANTED GaAs 983
Kei-Yu Ko, Samuel Chen, S.-Tong Lee, Longru Zheng,and T.Y. Tan
SURFACE AND INTERFACE DAMAGE CHARACTERIZATION OFREACTIVE ION ETCHED MBE REGROWN GaAs 987
M.W. Cole, M. Dutta, J. Rossabi, D.D. Smith, andJ.L. Lehman
Pd/Au:Be OHMIC CONTACTS TO p-TYPE GaAs 993K.M. Schmitz, K.L. Jiao, R. Sharma, W.A. Anderson,G. Rajeswaran, L.R. Zheng, M.W. Cole, and R.T.Lareau
IMPROVED HOLE DIFFUSION LENGTHS IN BULK n-TYPE GaAsFOR HIGH EFFICIENCY SOLAR CELLS 997
D. Wong, T.E. Schlesinger, and A.G. Milnes
THE STUDY OF CONTAMINATION OF CARBON, BORON, ANDOXYGEN IN LEC-GaAs 1001
Y. Itoh, M. Takai, H. Fukushima, and H. Kirita
IN-SITU SYNTHESIS AND MAGNETICALLY STABILIZEDKYROPOULOS GROWTH OF UNDOPED INDIUM PHOSPHIDE 1007
Stephen Bachowski, Brian S. Ahern, Robert M.Hilton, and Joseph A. Adamski
DEEP-LEVEL DOMINATED CURRENT-VOLTAGE CHARACTERISTICSOF NOVEL SEMICONDUCTOR HETEROSTRUCTURES 1011
K. Das
SURFACE STRUCTURE OF SULFUR COATED GaAs 1017Yoshihisa Fujisaki and Shigeo Goto
ELECTRICAL AND MATERIAL CHARACTERIZATION OF THESTABILITY OF AlGaAs AND GaAs PLANAR DOPED STRUCTURES 1021
Larry P. Sadwick and Dwight C. Streit
PHOTOLUMINESCENCE STUDIES OF IMPURITIES AND DEFECTS INMERCURIC IODIDE 1027
X.J. Bao, T.E. Schlesinger, R.B. James, A.Y. Cheng,and C. Ortale
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DEPTH SENSITIVE IMAGING OF DEFECTS IN EPILAYERS ANDSINGLE CRYSTALS USING WHITE BEAM SYNCHROTRON RADIATIONTOPOGRAPHY IN GRAZING BRAGG-LAUE GEOMETRY 1031
M. Dudley, G.-D. Yao, J. Wuf and H.-Y. Liu
AUTHOR INDEX 1037
SUBJECT INDEX 1043
MATERIALS RESEARCH SOCIETY SYMPOSIUM PROCEEDINGS 1051
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Cambridge University Press978-1-558-99051-7 - Materials Research Society Symposium Proceedings Volume 163: Impurities, Defects and Diffusion in Semiconductors: Bulk and Layered Structures: Symposium held November 27-December 1, 1989, Boston, Massachusetts, U.S.A.Editors: Donald J. Wolford, Jerzy Bernholc and Eugene E. HallerFrontmatterMore information
Preface
This volume of proceedings contains manuscripts fromSymposium G, entitled "Impurities, Defects, and Diffusion inSemiconductors: Bulk and Layered Structures." It was heldNovember 27-December 1, 1989, in Boston, MA, as part of the 1989Fall Meeting of the Materials Research Society. Historically,Symposium G was the seventh in a series of MRS-sponsored symposiawhich focused on various aspects of defects and defect propertiesin semiconducting materials. The program lasted four-and-one-half days and two evenings, and consisted of 21 invited talks, 75contributed oral presentations, and 104 posters, making it themost ambitious symposium held to date by MRS on semiconductordefects. Symposium G received gratifying response from theinternational defects, diffusion, and superlattice communities,with work originating from some 25 countries, led (in descendingorder) by the United States, Sweden, Japan, West Germany, andFrance. As organizers, we therefore owe this proceedings to theenthusiasm and expertise so many brought to Symposium G.
This symposium was conceived from the view that impurities,defects, and diffusion play key roles in modern-day research anddevelopment of semiconducting materials, structures, and devices.Recent breakthroughs in materials preparation with monolayercontrol, in diversity and sensitivity of characterizationtechniques, and in new theoretical methods, have collectively ledto great advances in the understanding of defect- and impurity-related phenomena. They have also resulted in the formulation ofnew, more complex and insightful questions. Since relatedquestions may arise in studies of bulk semiconductors, quantumwells, superlattices, and homo- and heterostructures, the intentof this symposium was to bring together, from around the world,experimentalists and theorists working on defect problems fromthroughout these various semiconductor systems. Papers wereoriginally solicited in the following broad topical areas:
Electronic structure of shallow and deep-level impurities,impurity complexes, native defects, and atomically orderedalloys
Self-diffusion, and diffusion of shallow and deep-levelimpurities and native defects
Defect and impurity reactions and thermochemistry, stoi-chiometry, and alloy-ordering phenomena
Interdiffusion and segregation in compounds and layeredstructures
Hydrogen-related phenomena and impurity passivation insemiconductors
To encourage the symposium attendees to emphasize these keynotethemes, experienced contributors from each major topical area wereinvited to participate. Their talks helped define the intendedconference's emphasis and flow.
Correspondingly, this proceedings volume is organized into16 parts, generally following the symposium order. The first 5parts deal with the Electronic Structure of various defect types
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in both elemental and III-V materials, as deduced largely byspectroscopies and theory. Highlights include Prof. Grimmeiss1
comprehensive, lead-off talk on recent progress made using high-resolution PTIS techniques applied to point defects in Si. Otherdetailed spectroscopy talks then follow, re-emphasizing the powerof optical spectroscopies in defect identification. Theseinclude: Prof. Monemar's review talk on complex defects exploredby absorption, luminescence, and ODMR in Si and III-Vs;Dr. Smith's review of novel optical aspects resulting from heavyshallow doping in homostruetures; talks on level structure of awide variety of native defects and transition metals;Prof. Thewalt's review of high-resolution Fourier-transformluminescence in defect characterization; Prof. Wichert's talk onperturbed angular correlation (PAC) techniques for impurity-pairidentification in Si; numerous contributed talks on transition-metal complexes and radiation defects in Si; and Dr. Reynold'sreview of defect spectroscopy in quantum wells, as well ascontributed talks on the same topic. This was followed byProf. Dow's review of the recent theory of defect levels in super-lattices, and a contributed paper.
Next, the proceedings deal with topics related to Hydrogen,with Si hosts presented in Part 6 and III-Vs presented in Part 7.Prof. Watkins sets the tone by describing elegant infraredexperiments and theory detailing H-B pairs in Si as Fermiresonances. This is followed by other talks on experiments andtheory concerning microscopies of H behavior, including:Dr. Chiarotti on molecular dynamics simulations of H motion incrystalline and amorphous Si; Prof. Estle on the structure andstability of muonium centers in semiconductors; Prof. Pajot oninfrared spectroscopy of H-impurity complexes in III-Vs; and avariety of authors on H-related passivation phenomena of dopantsin III-Vs.
The next major theme is Diffusion, with the correspondingpapers being presented in Part 8 on Si and Ge, Part 9 on compoundsemiconductors, and Part 10 on superlattices. These are led offby a review of first-principles calculations of self-diffusion anddopant diffusion in Si by Dr. Pantelides. This is followed bynumerous contributed presentations on both theoretical andexperimental studies in Si and Ge. Topics covered include theinfluence of pressure and strain on diffusion; transition-metalmotion; silicide formation; impurity precipitation; the elucida-tion of kick-out mechanisms; and anomalous diffusion mechanismsand interactions in elementals. Dr. Ourmazd then carries thistheme into compounds by describing TEM studies of self- andinterdiffusion in multilayer structures; which is followed byvarious experimental talks on both intrinsic and extrinsicdiffusion in both III-Vs and II-VIs. The diffusion theme isconcluded with presentations by Prof. Guido on experimentalaspects of impurity-enhanced disordering of superlattices, and byProf. Goesele on the theory of such impurity disordering.
The fourth major theme is DX and EL2 Centers, contained inParts 11 and 12, respectively. These topics are introduced byDr. Theis who reviews the current status of experiments aimed atthe microscopic and electronic properties of DX centers, includingthose needed to test DX theories. This presentation is followedby related talks on optical and transport experiments of bothshallow and deep DX properties, and new theoretical predictionsfor DX photocapture; and Dr. Chadi's review of current prominentDX models, including negative-U and large-lattice-relaxationaspects. This section is concluded with possible connections
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between DX and EL2 centers in a variety of measurement andcrystal-growth talks, with recent microscopic theory of EL2 beingreviewed by Dr. Baraff, and recent experiments related to EL2symmetry being reviewed by Dr. Trautman.
The fifth theme centers on III-V Doping, as presented inPart 13. It is highlighted by Dr. Walukiewicz who discussesrecent thermochemical models of amphoteric native defects used tointerpret successfully numerous transport experiments in GaAs andmetal-semiconductor interface studies. This is complemented byadditional talks on dopant activation and precipitation in bulkand in structures.
Theme six is Alloy Ordering, as reviewed by Prof. String-fellow. Here he presents strong experimental and thermochemicalevidence to prove that spontaneous, atomic ordering during crystalgrowth occurs broadly and quite commonly in mixed semiconductorsystems, and often arises in systems displaying miscibility gaps.This was followed by TEM studies of related alloys showing strongintrinsic ordering.
The seventh and final theme is Processing, with Si- and Ge-related papers contained in Part 15 and compound-related paperscontained in Part 16. Here, some 26 presentations describe suchdiverse aspects of processing as, for example, reactive-ionetching, rapid-thermal annealing, ion-beam etching, ion implanta-tion, electron irradiation, oxidation, thermal quenching, ohmic-contact formation, amorphous-layer formation, and surface-passivation methods.
Symposium G, described above and documented in the followingParts, achieved the main goals we, as organizers, set down. Themost important of those was the bringing together, in one meeting,researchers from the areas of bulk defects, diffusion andprocessing, and layered materials. High standards were maintainedthroughout, and the symposium was well attended and well received.We thank all the participants who made this possible.
April 1990 D.J. WolfordJ. BernholcE.E. Haller
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Acknowledgments
We would like to thank all the presenters, chairpersons, andthe audience for their often enthusiastic participation in thissymposium.
Since the names of all the authors are listed in the Tableof Contents, we only list the chairpersons here. They wereK.K. Bajaj, D.J. Chadi, H.G. Grimmeiss, L.C. Kimerling, R.C.Newman, M.L.W. Thewalt, S.G. Bishop, J. Furdyna, H.P. Hjalmarson,P.M. Mooney, M. Stavola, and J.A. Van Vechten. We are muchindebted to them for stimulating the discussions, for their ownexpert comments, and for keeping the program on track.
We are very much obliged to the many reviewers of the papersin this volume, each of whom reviewed a substantial number ofpapers on very short notice. Their contributions have muchimproved the quality of these Proceedings.
The financial support for this symposium was provided by theAir Force Office for Scientific Research, Dr. Cole Litton, ProgramDirector; and by the Office of Naval Research, Dr. Larry R.Cooper, Program Director. By stimulating interdisciplinarypresentations and attendance, their support has been instrumentalto making this symposium a success.
A substantial amount of administrative costs have beencarried by the Co-organizers1 institutions. We wish to thank IBMCorporation, Lawrence Berkeley Laboratories, and North CarolinaState University for providing personnel and other servicesessential to the planning and the smooth running of the symposium.
Finally, we would like to thank the MRS staff for invaluableassistance in preparing and running the symposium, and for theirpatience, indulgence, and care in the preparation of thisproceedings volume.
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Cambridge University Press978-1-558-99051-7 - Materials Research Society Symposium Proceedings Volume 163: Impurities, Defects and Diffusion in Semiconductors: Bulk and Layered Structures: Symposium held November 27-December 1, 1989, Boston, Massachusetts, U.S.A.Editors: Donald J. Wolford, Jerzy Bernholc and Eugene E. HallerFrontmatterMore information
MATERIALS RESEARCH SOCIETY SYMPOSIUM PROCEEDINGS
Recent Materials Research Society Symposium Proceedings
Volume 145—III-V Heterostructures for Electronic/Photonic Devices, C.W. Tu,V.D. Mattera, A.C. Gossard, 1989, ISBN: 1-55899-018-6
Volume 146—Rapid Thermal Annealing/Chemical Vapor Deposition and IntegratedProcessing, D. Hodul, J. Gelpey, M.L. Green, T.E. Seidel, 1989,ISBN: 1-55899-019-4
Volume 147—Ion Beam Processing of Advanced Electronic Materials, N.W. Cheung,A.D. Marwick, J.B. Roberto, 1989, ISBN: 1-55899-020-8
Volume 148—Chemistry and Defects in Semiconductor Heterostructures, M. Kawabe,T.D. Sands, E.R. Weber, R.S. Williams, 1989, ISBN: 1-55899-021-6
Volume 149—Amorphous Silicon Technology-1989, A. Madan, M.J. Thompson,P.C. Taylor, Y. Hamakawa, P.G. LeComber, 1989, ISBN: 1-55899-022-4
Volume 150—Materials for Magneto-Optic Data Storage, C.J. Robinson, T. Suzuki,CM. Falco, 1989, ISBN: 1-55899-023-2
Volume 151—Growth, Characterization and Properties of Ultrathin Magnetic Films andMultilayers, B.T. Jonker, J.P. Heremans, E.E. Marinero, 1989,ISBN: 1-55899-024-0
Volume 152—Optical Materials: Processing and Science, D.B. Poker, C. Ortiz, 1989,ISBN: 1-55899-025-9
Volume 153—Interfaces Between Polymers, Metals, and Ceramics, B.M. DeKoven,A.J. Gellman, R. Rosenberg, 1989, ISBN: 1-55899-026-7
Volume 154—Electronic Packaging Materials Science IV, R. Jaccodine, K.A. Jackson,E.D. Lillie, R.C Sundahl,1989, ISBN: 1-55899-027-5
Volume 155—Processing Science of Advanced Ceramics, I. A. Aksay, G.L. McVay,D.R. Ulrich, 1989, ISBN: 1-55899-028-3
Volume 156—High Temperature Superconductors: Relationships Between Properties,Structure, and Solid-State Chemistry, J.R. Jorgensen, K. Kitazawa,J.M. Tarascon, M.S. Thompson, J.B. Torrance, 1989, ISBN: 1-55899-029
Volume 157—Beam-Solid Interactions: Physical Phenomena, J.A. Knapp, P. Borgesen,R.A. Zuhr, 1989, ISBN 1-55899-045-3
Volume 158—In-Situ Patterning: Selective Area Deposition and Etching, R. Rosenberg,A.F. Bernhardt, J.G. Black, 1989, ISBN 1-55899-046-1
Volume 159—Atomic Scale Structure of Interfaces, R.D. Bringans, R.M. Feenstra,J.M. Gibson, 1989, ISBN 1-55899-047-X
Volume 160—Layered Structures: Heteroepitaxy, Superlattices, Strain, andMetastability, B.W. Dodson, L.J. Schowalter, J.E. Cunningham,F.H. Pollak, 1989, ISBN 1-55899-048-8
Volume 161—Properties of II-VI Semiconductors: Bulk Crystals, Epitaxial Films,Quantum Well Structures and Dilute Magnetic Systems, J.F. Schetzina,F.J. Bartoli, Jr., H.F. Schaake, 1989, ISBN 1-55899-049-6
Volume 162—Diamond, Boron Nitride, Silicon Carbide and Related Wide BandgapSemiconductors, J.T. Glass, R.F. Messier, N. Fujimori, 1989,ISBN 1-55899-050-X
Volume 163—Impurities, Defects and Diffusion in Semiconductors: Bulk and LayeredStructures, J. Bernholc, E.E. Haller, D.J. Wolford, 1989,ISBN 1-55899-051-8
Volume 164—Materials Issues in Microcrystalline Semiconductors,P.M. Fauchet, C.C. Tsai, K. Tanaka, 1989, ISBN 1-55899-052-6
Volume 165—Characterization of Plasma-Enhanced CVD Processes, G. Lucovsky,D.E. Ibbotson, D.W. Hess, 1989, ISBN 1-55899-053-4
Volume 166—Neutron Scatterino for Material* Science S M Shaniro, S.C. Moss,
www.cambridge.org© in this web service Cambridge University Press
Cambridge University Press978-1-558-99051-7 - Materials Research Society Symposium Proceedings Volume 163: Impurities, Defects and Diffusion in Semiconductors: Bulk and Layered Structures: Symposium held November 27-December 1, 1989, Boston, Massachusetts, U.S.A.Editors: Donald J. Wolford, Jerzy Bernholc and Eugene E. HallerFrontmatterMore information
MATERIALS RESEARCH SOCIETY SYMPOSIUM PROCEEDINGS
Volume 167—Advanced Electronic Packaging Materials, A. Barfknecht, J. Partridge,C-Y. Li, C.J. Chen, 1989, ISBN 1-55899-055-0
Volume 168—Chemical Vapor Deposition of Refractory Metals and Ceramics,T.M. Besmann, B.M. Gallois, 1989, ISBN 1-55899-056-9
Volume 169—High Temperature Superconductors: Fundamental Properties and NovelMaterials Processing, J. Narayan, C.W. Chu, L.F. Schneemeyer,D.K. Christen, 1989, ISBN 1-55899-057-7
Volume 170—Tailored Interfaces in Composite Materials, C.G. Pantano, E.J.H. Chen,1989, ISBN 1-55899-058-5
Volume 171—Polymer Based Molecular Composites, D.W. Schaefer, J.E. Mark, 1989,ISBN 1-55899-059-3
Volume 172—Optical Fiber Materials and Processing, J.W. Fleming, G.H. Sigel,S. Takahashi, P.W. France, 1989, ISBN 1-55899-060-7
Volume 173—Electrical, Optical and Magnetic Properties of Organic Solid-StateMaterials, L.Y. Chiang, D.O. Cowan, P. Chaikin, 1989,ISBN 1-55899-061-5
Volume 174—Materials Synthesis Utilizing Biological Processes, M. Alper, P.D. Calvert,P.C. Rieke, 1989, ISBN 1-55899-062-3
Volume 175—Multi-Functional Materials, D.R. Ulrich, F.E. Karasz, AJ. Buckley,G. Gallagher-Daggitt, 1989, ISBN 1-55899-063-1
Volume 176—Scientific Basis for Nuclear Waste Management XIII, V.M. Oversby,P.W. Brown, 1989, ISBN 1-55899-064-X
Volume 177—Macromolecular Liquids, C.R. Safinya, S.A. Safran, P.A. Pincus, 1989,ISBN 1-55899-065-8
Volume 178—Fly Ash and Coal Conversion By-Products: Characterization, Utilizationand Disposal VI, F.P. Glasser, R.L. Day, 1989, ISBN 1-55899-066-6
Volume 179—Specialty Cements with Advanced Properties, H. Jennings, A.G. Landers,B.E. Scheetz, I. Odler, 1989, ISBN 1-55899-067-4
MATERIALS RESEARCH SOCIETY MONOGRAPH
Atom Probe Microanalysis: Principles and Applications to Materials Problems,M.K. Miller, G.D.W. Smith, 1989; ISBN 0-931837-99-5
Earlier Materials Research Society Symposium Proceedings listed in the back.
www.cambridge.org© in this web service Cambridge University Press
Cambridge University Press978-1-558-99051-7 - Materials Research Society Symposium Proceedings Volume 163: Impurities, Defects and Diffusion in Semiconductors: Bulk and Layered Structures: Symposium held November 27-December 1, 1989, Boston, Massachusetts, U.S.A.Editors: Donald J. Wolford, Jerzy Bernholc and Eugene E. HallerFrontmatterMore information