III-V enabling new compound semiconductor...

SEMICON Europa 2010 Oct. 19th New material session1

Fabrice LETERTRE VP Corporate R&D Soitec Group

October 19, 2010

III-V enabling new compound semiconductor applications : The quest for Energy Efficiency / Performance

SEMICON Europa 2010 Oct. 19th New material session

Electronic : Moore’s law will focus on power versus performance efficiency �� III-V high mobility channel integration within ICs ( CV/I reduction), monolithic integration (SoC)LED’s based lighting is a semiconductor market and will contribute to white energy generation �� InGaN / GaN materials for PC white LEDs (lm/W increase)Conversion to electric cars will be a key driver for high efficiency power devices as well as energy conversion in renewable energy. ��GaN material high power switching devices (Ron decrea se)Solar energy is a semiconductor market and will provide the best in class renewable energy �� III-V based CPV cells (conversion efficiency increase)

4 new industry segments where III-V compoundsemiconductor will play a role for the next decade

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The winning toolboxes for enabling material enginee ringand integration (SOI, III-V, ….)

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EpitaxyEpitaxy

LEDLaser, Power

Photovoltaic (III-V)3D Applications

Imaging, digital 3D,..

Smart Stacking TMSmart Stacking TM

Smart Cut TMSmart Cut TM

Microelectronic / Photonic (SOI)


III-V as high mobility channel for CMOS integrationA way to sustain Moore’s law

Potential solution for low on-resistance N FET (still need P FET)High risk R&D path for future CMOS integration on silicon platform (not obvious)Further extension to UTB devices (FD SOI, planar, non planar)

From Imec

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Engineered substrate : a path to III-V monolithicintegration with Si ICs (1)

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Engineered substrate : a path to III-V monolithicintegration with Si ICs (2)

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GaAs & InP engineered substrate as potential building block for Si monolithic integration

3 inch GaAs thin film transferred onto silicon

GaAs on silicon TEM cross section (as split)

E. Jalaguier and al., Electron Lett, 34, pp. 408–409 (1998)

L. Di Cioccio and al., from book Wafer bonding – applications and technology by M. Alexe and U. Gösele., chapter 7, p. 263 (2004)

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Smart Cut TM transfer of 3’’ InP on Si

E. Jalaguier and al., Proc. 11th Intern. Conf. on InP and Related Materials, Davos, Switzerland, PDB 4, pp 26–27 (1999)

L. Di Cioccio and al., from book Wafer bonding – applications and technology by M. Alexe and U. Gösele., chapter 7, p. 263 (2004)

XTEM Cross section of InPfilm on SiO2 coated Si wafer (as split)




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The lighting revolution: LEDs

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Indoorsavings 50%

Outdoorsavings 70-80%

• High efficiency – low power consumption

• Long life time – low waste amount

• No mercury content – no end-of-life disposal problems

• High efficiency – low power consumption

• Long life time – low waste amount

• No mercury content – no end-of-life disposal problems


Materials & device development towards high brightness LEDS

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Color stability, high efficiency at high current, better heat dissipation, reliability are critical

Haitz’ law supports scalability of SSL

> 1000 lumen - 1mm2Material innovation opportunity to :

- Improve « efficiency droop » situation and hence improve overall efficiency for high power LED applications

TDD < 1E6 / cm2

Low TDD GaN On Sapphire (obtained with Smart Cut TM)




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GaN entering a wide field of power applications

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GaN technology is key in hybrid vehicle application

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GaN � higher supply voltage to drive more electrical power with

less ohmic losses

GaN1.1kV

Source: Kachi et. al. IEEETOYOTA CENTRAL R&D LABS




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Principle of Concentrated Photovoltaics (CPV)

Sunlight is concentrated thru high quality optical lenses onto a small semiconductor device � CPV cell

x500

The CPV cell is made of III-V materials allowing very-high efficiency(No use of Silicon)

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Materials and bonding techniques enable CPV roadmap How to improve solar conversion efficiency ?

Materials needed to absorb solar spectrum

Need to combine differentmaterials in order to capture the widest part of solar spectrum, with two challenges:

CPV Utility Scale Solar Power, October, 2010

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These materials can be rare and expensive

These materials can’t be made on the same substrate

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III-V solar cell on GaAs on silicon

IIIIII--V V solarsolar cellcell growthgrowth on waferon wafer--bondedbonded GaAsGaAs/Si/Si--substratessubstrates

J. J. SchoneSchone; F. ; F. DimrothDimroth; A. W. ; A. W. BettBett; A. Tauzin; C. ; A. Tauzin; C. JaussaudJaussaud; J.; J.--C. Roussin C. Roussin

Page(s): 776Page(s): 776--779 IEEE 4th World 779 IEEE 4th World ConferenceConference on on PhotovoltaicPhotovoltaic EnergyEnergy Conversion, Hawaii, Conversion, Hawaii, May 2006May 2006

EarlyEarly functionnalfunctionnal cellscells demonstrateddemonstrated

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Summary

III-V semiconductor materials will play a major role in application where performance / efficiencyrequirements are the driving forces :

Monolithic integration with Silicon ICs, III-V / Ge CMOS ?SSLPower switchingCPV

Material and substrate engineering are keytechnologies to enable technical breakthroughand open new opportunities

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III-V enabling new compound semiconductor...

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