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August 2015

FDM

S8095AC

Dual N

& P-C

hannel PowerTrench

® MO

SFET

©2015 Fairchild Semiconductor Corporation 1 www.fairchildsemi.comFDMS8095AC Rev.1.0

FDMS8095ACDual N & P-Channel PowerTrench® MOSFETN-Channel: 150 V, 27 A, 30 mΩ P-Channel: -150 V, -2.2 A, 1200 mΩ

FeaturesQ1: N-Channel

Max rDS(on) = 30 mΩ at VGS = 10 V, ID = 6.2 AMax rDS(on) = 41 mΩ at VGS = 6 V, ID = 5.2 A

Q2: P-ChannelMax rDS(on) = 1200 mΩ at VGS = -10 V, ID = -1 AMax rDS(on) = 1400 mΩ at VGS = -6 V, ID = -0.9 AOptimised for active clamp forward converters

RoHS Compliant

General DescriptionThese dual N and P-Channel enhancement mode Power MOSFETs are produced using Fairchild Semiconductor’s advanced PowerTrench® process that has been especially tailored to minimize on-state resistance and yet maintain superior switching performance. Shrinking the area needed for implementation of active clamp topology; enabling best in class power density.

ApplicationsDC-DC Converter

Active Clamp

Power 56

Bottom Top

D1

D2

G2S2 S2 S2

G1S1 S1 S1 Pin 1

Pin 1

1

2

3

4

8

7

6

5

Contact to D1 (backside)

Q1 Q2

Contact to D2 (backside)

G1

S1

G2

S2

S1

S1

S2

S2

MOSFET Maximum Ratings TA = 25 °C unless otherwise noted

Thermal Characteristics

Package Marking and Ordering Information

Symbol Parameter Q1 Q2 UnitsVDS Drain to Source Voltage 150 -150 VVGS Gate to Source Voltage ±20 ±25 V

ID

Drain Current -Continuous TC = 25 °C (Note 5) 27 -2.2

ADrain Current -Continuous TC = 100 °C (Note 5) 17 -1.4

-Continuous TA = 25 °C 6.2 1a -1 1b

-Pulsed (Note 4) 143 -8.8EAS Single Pulse Avalanche Energy (Note 3) 216 6 mJ

PD

Power Dissipation for Single Operation TA = 25 °C 2.3 1a 2.3 1b

WPower Dissipation for Single Operation TA = 25 °C 0.9 1c 0.9 1d

Power Dissipation for Single Operation TC = 25 °C 50 12.5TJ, TSTG Operating and Storage Junction Temperature Range -55 to +150 °C

RθJA Thermal Resistance, Junction to Ambient 55 1a 55 1b

°C/WRθJA Thermal Resistance, Junction to Ambient 138 1c 138 1d

RθJC Thermal Resistance, Junction to Case 2.5 10

Device Marking Device Package Reel Size Tape Width QuantityFDMS8095AC FDMS8095AC Power 56 13” 12 mm 3000 units

FDM

S8095AC

Dual N

& P-C

hannel PowerTrench

® MO

SFET


Electrical Characteristics TJ = 25 °C unless otherwise noted

Off Characteristics

On Characteristics

Dynamic Characteristics

Switching Characteristics

Symbol Parameter Test Conditions Type Min Typ Max Units

BVDSS Drain to Source Breakdown Voltage ID = 250 μA, VGS = 0 VID = -250 μA, VGS = 0 V

Q1Q2

150-150 V

ΔBVDSS ΔTJ

Breakdown Voltage TemperatureCoefficient

ID = 250 μA, referenced to 25 °CID = -250 μA, referenced to 25 °C

Q1Q2 103

122 mV/°C

IDSS Zero Gate Voltage Drain Current VDS = 120 V, VGS = 0 VVDS = -120 V, VGS = 0 V

Q1Q2

1-1 μA

IGSS Gate to Source Leakage Current VGS = ±20 V, VDS = 0 VVGS = ±25 V, VDS = 0 V

Q1Q2 ±100

±100nAnA

VGS(th) Gate to Source Threshold Voltage VGS = VDS, ID = 250 μAVGS = VDS, ID = -250 μA

Q1Q2

2.0-2.0

3.2-3.2

4.0-4.0 V

ΔVGS(th) ΔTJ

Gate to Source Threshold VoltageTemperature Coefficient

ID = 250 μA, referenced to 25 °CID = -250 μA, referenced to 25 °C

Q1Q2

-11-6 mV/°C

rDS(on) Static Drain to Source On Resistance

VGS = 10 V, ID = 6.2 A VGS = 6 V, ID = 5.2 A VGS = 10 V, ID = 6.2 A, TJ = 125 °C

Q1253348

304158

mΩVGS = -10 V, ID = -1 A VGS = -6 V, ID = -0.9 A VGS = -10 V, ID = -1 A, TJ = 125 °C

Q2840940

1520

120014002171

gFS Forward Transconductance VDD = 10 V, ID = 6.2 AVDD = -10 V, ID = -1 A

Q1Q2

190.75 S

Ciss Input Capacitance Q1VDS = 75 V, VGS = 0 V, f = 1 MHZ

Q2VDS = -75 V, VGS = 0 V, f = 1 MHZ

Q1Q2 1441

1622020230 pF

Coss Output Capacitance Q1Q2

12713

18025 pF

Crss Reverse Transfer Capacitance Q1Q2

4.40.6

105 pF

Rg Gate Resistance Q1Q2

0.10.1

1.33.3

3.38.3 Ω

td(on) Turn-On Delay Time Q1VDD = 75 V, ID = 6.2 A, VGS = 10 V, RGEN = 6 ΩQ2VDD = -75 V, ID = -1 A, VGS = -10 V, RGEN = 6 Ω

Q1Q2 12

5.22211 ns

tr Rise Time Q1Q2 2.7

1.61010 ns

td(off) Turn-Off Delay Time Q1Q2 18

7.43315 ns

tf Fall Time Q1Q2 4

6.31013 ns

Qg(TOT) Total Gate Charge VGS = 0 V to 10 VVGS = 0 V to -10 V Q1

VDD = 75 V, ID = 6.2 A

Q1Q2

212.8

304 nC

Qg(TOT) Total Gate Charge VGS = 0 V to 6 VVGS = 0 V to -6 V

Q1Q2

131.8

192.6 nC

Qgs Gate to Source Charge Q2VDD = -75 VID = -1 A

Q1Q2 6.7

0.8 nC

Qgd Gate to Drain “Miller” Charge Q1Q2 3.9

0.7 nC

FDM

S8095AC

Dual N

& P-C

hannel PowerTrench

® MO

SFET


Electrical Characteristics TJ = 25 °C unless otherwise noted

Drain-Source Diode Characteristics

Notes:

1. RθJA is determined with the device mounted on a 1in2 pad 2 oz copper pad on a 1.5 x 1.5 in. board of FR-4 material. RθCA is determined by the user's board design.

2. Pulse Test: Pulse Width < 300 μs, Duty cycle < 2.0%.

3. Q1: EAS of 216 mJ is based on starting TJ = 25 oC, L = 3 mH, IAS = 12 A, VDD = 150 V, VGS = 10 V. 100% test at L = 0.3 mH, IAS = 28 A.

Q2: EAS of 6 mJ is based on starting TJ = 25 oC, L = 3 mH, IAS = -2 A, VDD = -150 V, VGS = -10 V. 100% test at L = 0.3 mH, IAS = -6.9 A.

4. Pulsed Id please refer to Fig 11 SOA graph for more details.

5. Computed continuous current limited to Max Junction Temperature only, actual continuous current will be limited by thermal & electro-mechanical application board design.

Symbol Parameter Test Conditions Type Min Typ Max Units

VSD Source-Drain Diode Forward Voltage VGS = 0 V, IS = 6.2 A (Note 2)VGS = 0 V, IS = -1 A (Note 2)

Q1Q2 0.8

-0.91.3-1.3 V

trr Reverse Recovery Time Q1IF = 6.2 A, di/dt = 100 A/sQ2IF = -1 A, di/dt = 100 A/s

Q1Q2

6944

11171 ns

Qrr Reverse Recovery Charge Q1Q2 106

68170109 nC

a.55 °C/W when mounted on a 1 in2 pad of 2 oz copper

c. 138 °C/W when mounted on a minimum pad of 2 oz copper

b.55 °C/W when mounted on a 1 in2 pad of 2 oz copper

d. 138 °C/W when mounted on a minimum pad of 2 oz copper

G DF

DS

SF SS

G DF

DS

SFSS G D

FD

SSF SS

G DF

DS

SF SS

FDM

S8095AC

Dual N

& P-C

hannel PowerTrench

® MO

SFET


Typical Characteristics (Q1 N-Channel) TJ = 25°C unless otherwise noted

Figure 1.

0 1 2 3 4 50

20

40

60

80

100

VGS = 7 V

VGS = 6 V

VGS = 8 V

PULSE DURATION = 80 μsDUTY CYCLE = 0.5% MAX

VGS = 5.5 V

VGS = 10 V

I D, D

RA

IN C

UR

REN

T (A

)

VDS, DRAIN TO SOURCE VOLTAGE (V)

On Region Characteristics Figure 2.

0 20 40 60 80 1000.8

1.0

1.2

1.4

1.6

1.8

2.0

2.2

2.4

VGS = 8 V


NO

RM

ALI

ZED

DR

AIN

TO

SO

UR

CE

ON

-RES

ISTA

NC

E

ID, DRAIN CURRENT (A)

VGS = 7 V

VGS = 6 V

VGS = 10 V

VGS = 5.5 V

Normalized On-Resistance vs Drain Current and Gate Voltage

Figure 3. Normalized On Resistance

-75 -50 -25 0 25 50 75 100 125 1500.5

1.0

1.5

2.0

2.5

ID = 6.2 AVGS = 10 V

NO

RM

ALI

ZED

DR

AIN

TO

SO

UR

CE

ON

-RES

ISTA

NC

E

TJ, JUNCTION TEMPERATURE (oC)

vs Junction TemperatureFigure 4.

4 5 6 7 8 9 100

50

100

150

TJ = 125 oC

ID = 6.2 A

TJ = 25 oC

VGS, GATE TO SOURCE VOLTAGE (V)

r DS(

on),

DR

AIN

TO

SO

UR

CE

ON

-RES

ISTA

NC

E (m

Ω) PULSE DURATION = 80 μs

DUTY CYCLE = 0.5% MAX

On-Resistance vs Gate to Source Voltage

Figure 5. Transfer Characteristics

2 3 4 5 6 7 80

20

40

60

80

100

TJ = 150 oC

VDS = 5 V


TJ = -55 oC

TJ = 25 oC

I D, D

RA

IN C

UR

REN

T (A

)

VGS, GATE TO SOURCE VOLTAGE (V)

Figure 6.

0.0 0.2 0.4 0.6 0.8 1.0 1.20.001

0.01

0.1

1

10

100200

TJ = -55 oC

TJ = 25 oC

TJ = 150 oC

VGS = 0 V

I S, R

EVER

SE D

RA

IN C

UR

REN

T (A

)

VSD, BODY DIODE FORWARD VOLTAGE (V)

Source to Drain Diode Forward Voltage vs Source Current

FDM

S8095AC

Dual N

& P-C

hannel PowerTrench

® MO

SFET


Figure 7.

0 5 10 15 20 250

2

4

6

8

10ID = 6.2 A

VDD = 100 V

VDD = 75 V

V GS,

GA

TE T

O S

OU

RC

E VO

LTA

GE

(V)

Qg, GATE CHARGE (nC)

VDD = 50 V

Gate Charge Characteristics Figure 8.

0.1 1 10 1001

10

100

1000

10000

f = 1 MHzVGS = 0 V

CA

PAC

ITA

NC

E (p

F)

VDS, DRAIN TO SOURCE VOLTAGE (V)

Crss

Coss

Ciss

Capacitance vs Drain to Source Voltage

Figure 9.

0.001 0.01 0.1 1 10 1001

10

100

TJ = 100 oC

TJ = 25 oC

TJ = 125 oC

tAV, TIME IN AVALANCHE (ms)

I AS,

AVA

LAN

CH

E C

UR

REN

T (A

)

Unclamped Inductive Switching Capability

Figure 10.

25 50 75 100 125 1500

6

12

18

24

30

VGS = 10 V

RθJC = 2.5 oC/W

VGS = 6 V

I D, D

RA

IN C

UR

REN

T (A

)

TC, CASE TEMPERATURE (oC)

Maximum Continuous Drain Current vs Case Temperature

Figure 11.

0.1 1 10 100 10000.01

0.1

1

10

100

300

10 μs

CURVE BENT TO MEASURED DATA

100 μs

10 ms

DC

1 ms

I D, D

RA

IN C

UR

REN

T (A

)

VDS, DRAIN to SOURCE VOLTAGE (V)

THIS AREA IS LIMITED BY rDS(on)

SINGLE PULSETJ = MAX RATEDRθJC = 2.5 oC/WTC = 25 oC

Forward Bias Safe Operating Area

Figure 12.

10-5 10-4 10-3 10-2 10-1 110

100

1000

1000020000

SINGLE PULSERθJC = 2.5 oC/WTC = 25 oC

P(PK

), PE

AK

TR

AN

SIEN

T PO

WER

(W)

t, PULSE WIDTH (sec)

Single Pulse Maximum Power Dissipation


FDM

S8095AC

Dual N

& P-C

hannel PowerTrench

® MO

SFET


Figure 13.

10-5 10-4 10-3 10-2 10-1 10.001

0.01

0.1

12

SINGLE PULSE

DUTY CYCLE-DESCENDING ORDER

r(t),

NO

RM

ALI

ZED

EFF

ECTI

VE T

RA

NSI

ENT

THER

MA

L R

ESIS

TAN

CE

t, RECTANGULAR PULSE DURATION (sec)

D = 0.5 0.2 0.1 0.05 0.02 0.01

NOTES:ZθJC(t) = r(t) x RθJCRθJC = 2.5 oC/W

Duty Cycle, D = t1 / t2Peak TJ = PDM x ZθJC(t) + TC

PDM

t1t2

Junction-to-Case Transient Thermal Response Curve


FDM

S8095AC

Dual N

& P-C

hannel PowerTrench

® MO

SFET


Typical Characteristics (Q2 P-Channel) TJ = 25 °C unless otherwise noted

Figure 14. On- Region Characteristics Figure 15. Normalized on-Resistance vs Drain Current and Gate Voltage

Figure 16. Normalized On-Resistance vs Junction Temperature

Figure 17. On-Resistance vs Gate to Source Voltage

Figure 18. Transfer Characteristics Figure 19. Source to Drain Diode Forward Voltage vs Source Current

0 1 2 3 4 50

1

2

3

4

VGS = -6 V

VGS = -7 V

VGS = -5.5 V


VGS = -10 V

VGS = -5 V

-I D, D

RA

IN C

UR

REN

T (A

)

-VDS, DRAIN TO SOURCE VOLTAGE (V) 0 1 2 3 40.8

1.0

1.2

1.4

1.6

1.8

VGS = -5.5 V


NO

RM

ALI

ZED

DR

AIN

TO

SO

UR

CE

ON

-RES

ISTA

NC

E

-ID, DRAIN CURRENT (A)

VGS = -7 VVGS = -6 V

VGS = -5 V

VGS = -10 V

-75 -50 -25 0 25 50 75 100 125 1500.4

0.6

0.8

1.0

1.2

1.4

1.6

1.8

2.0

2.2

ID = -1 AVGS = -10 V

NO

RM

ALI

ZED

DR

AIN

TO

SO

UR

CE

ON

-RES

ISTA

NC

E

TJ, JUNCTION TEMPERATURE (oC)4 5 6 7 8 9 10

1000

1500

2000

2500

3000

TJ = 125 oC

ID = -1 A

TJ = 25 oC

-VGS, GATE TO SOURCE VOLTAGE (V)

r DS(

on),

DR

AIN

TO

SO

UR

CE

ON

-RES

ISTA

NC

E (m

Ω) PULSE DURATION = 80 μs

DUTY CYCLE = 0.5% MAX

2 3 4 5 6 70

1

2

3

4

TJ = 150 oC

VDS = -5 V


TJ = -55 oC

TJ = 25 oC

-I D, D

RA

IN C

UR

REN

T (A

)

-VGS, GATE TO SOURCE VOLTAGE (V)0.0 0.2 0.4 0.6 0.8 1.0 1.2

0.001

0.01

0.1

1

5

TJ = -55 oC

TJ = 25 oC

TJ = 150 oC

VGS = 0 V

-I S, R

EVER

SE D

RA

IN C

UR

REN

T (A

)

-VSD, BODY DIODE FORWARD VOLTAGE (V)

FDM

S8095AC

Dual N

& P-C

hannel PowerTrench

® MO

SFET


Typical Characteristics (Q2 P-Channel) TJ = 25°C unless otherwise noted

Figure 20. Gate Charge Characteristics Figure 21. Capacitance vs Drain to Source Voltage

Figure 22. Unclamped Inductive Switching Capability

Figure 23. Maximum Continuous Drain Current vs Case Temperature

Figure 24. Forward Bias Safe Operating Area

Figure 25. Single Pulse Maximum PowerDissipation

0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.50

2

4

6

8

10ID = -1 A

VDD = -100 V

VDD = -75 V

-VG

S, G

ATE

TO

SO

UR

CE

VOLT

AG

E (V

)

Qg, GATE CHARGE (nC)

VDD = -50 V

0.1 1 10 1000.1

1

10

100

1000

f = 1 MHzVGS = 0 V

CA

PAC

ITA

NC

E (p

F)

-VDS, DRAIN TO SOURCE VOLTAGE (V)

Crss

Coss

Ciss

0.001 0.01 0.1 11

10

20

TJ = 125 oC

TJ = 25 oC

TJ = 100 oC

tAV, TIME IN AVALANCHE (ms)

-I AS,

AVA

LAN

CH

E C

UR

REN

T (A

)

25 50 75 100 125 1500.0

0.5

1.0

1.5

2.0

2.5

VGS = -6 V

RθJC = 10 oC/W

VGS = -10 V-I D

, DR

AIN

CU

RR

ENT

(A)

TC, CASE TEMPERATURE (oC)

1 10 100 6000.01

0.1

1

1020

CURVE BENT TO MEASURED DATA

100 μs

10 msDC

1 ms

-I D, D

RA

IN C

UR

REN

T (A

)

-VDS, DRAIN to SOURCE VOLTAGE (V)

THIS AREA IS LIMITED BY rDS(on)

SINGLE PULSETJ = MAX RATEDRθJC = 10 oC/WTC = 25 oC

10-4 10-3 10-2 10-1 110

100

300

SINGLE PULSERθJC = 10 oC/WTC = 25 oC

P(PK

), PE

AK

TR

AN

SIEN

T PO

WER

(W)

t, PULSE WIDTH (sec)

Typical Characteristics (Q2 P-Channel) TJ = 25 °C unless otherwise noted

Figure 26. Junction-to-Case Transient Thermal Response Curve

10-4 10-3 10-2 10-1 10.01

0.1

1

2

SINGLE PULSE

DUTY CYCLE-DESCENDING ORDER

r(t),

NO

RM

ALI

ZED

EFF

ECTI

VE T

RA

NSI

ENT

THER

MA

L R

ESIS

TAN

CE

t, RECTANGULAR PULSE DURATION (sec)

D = 0.5 0.2 0.1 0.05 0.02 0.01

NOTES:ZθJC(t) = r(t) x RθJCRθJC = 10 oC/W

Duty Cycle, D = t1 / t2Peak TJ = PDM x ZθJC(t) + TC

PDM

t1t2

FDM

S8095AC

Dual N

& P-C

hannel PowerTrench

® MO

SFET


SIDE VIEW

NOTES:

A. DOES NOT FULLY CONFORM TO JEDEC

REGISTRATION, MO-229.

B. DIMENSIONS ARE IN MILLIMETERS.

C. DIMENSIONS AND TOLERANCES PER

ASME Y14.5M, 2009.

D. LAND PATTERN RECOMMENDATION IS

BASED ON FSC DESIGN ONLY.

E. DRAWING FILENAME: MKT-MLP08Zrev1.

C

RECOMMENDED LAND PATTERN

0.08 C

SEATING

PLANE

0.10 C

0.80 MAX

(0.20)

0.05

0.00

TOP VIEW

A

B

0.10 C

0.10 C

2X

2X

PIN#1

IDENT

5.00

6.00

BOTTOM VIEW

0.10 C A B

0.05 C

1.27

(0.35)4X

1.80

1.70

(2)X

4.15

4.05

(2X)

0.55

0.45

8X

0.25

0.15

(4X)

(0.77) 6X

(3.04) 2X

(0.50)3X

12

3

4

8

7

6

5

PIN#1

IDENT

6.30

0.50

1.75(2X)

4.41 (2X)

0.65(8X)

1

567

8

432

0.55

0.45

(8X)

4.10 (2X)

0.67 (6X)

0.50 (2X)

0.60(8X)

1.27

0.635

1.1252X

2.26

1.15

0.635

8X

8X

2X

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