HoweLecture1.Overview[1]

8/16/2019 HoweLecture1.Overview[1]

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EE C245 – ME C218 Fall 2003 Lecture 19

Dimensional Ranges

• 1 µm < L < 300 µm lateral dimensionsSurace micromac!ined structures " #classic MEMS$

• 300 µm < L < 3 mm

%ul& silicon'(aer )onded structures " still call t!em MEMSand co*er t!em in t!is course

• 10 nm < L < 1 µm

+ano electromec!anical s,stems " +EMS-o*erla. (it! MEMS " some co*era/e in t!is course


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What aren’t MEMS

• !e enso microcar circa 1991!tt.''(((/lo)aldensocom'6%7'!istor,'e.91!tml

• Fa)rication .rocess micro electrodisc!ar/e mac!inin/

It runs!

Cost?


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E:.erimental Cat!etert,.e Micromac!ine or;e.air in +arro( Com.le: 6reas

eldin/ de*ice Monitorin/ de*ice

Multi reedom )endin/ tu)e

=ision de*ice;e.airin/mani.ulator

Posture Detecting Device

>a.anese Micromac!ine ?ro@ect 19912000


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Batch Fabrication Technology• Planar integrated circuit technology 19! "

1 !inilm de.osition and etc!in/2 Modiication o t!e to. e( µm o t!e su)strate

3 Lateral dimensions deined ), .!otolit!o/ra.!,A a .rocess deri*ed rom oset .rintin/

• ;esult CM7S inte/rated circuits )ecame t!e ultimate #ena)lin/ tec!nolo/,$ ), circa 1980

• MooreBs La(ensit, -and .erormanceA )roadl, deined o di/ital inte/rated circuits increases ), a actor o t(o e*er, ,ear


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# Micro$abricated %nertial Sensor

MEMSC-6ndo*erA Mass

(oa:is t!ermal)u))leaccelerometer

ec!nolo/, standardCM7S electronics (it!.ost .rocessin/ to orm

t!ermall, isolated sensor structures

Note Bm a tec!nical ad*isor to MEMSCa s.ino rom 6nalo/ e*ices


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&ther Batch Fabrication Processes

• Distoricall,A t!ere arenBt t!at man, e:am.les outsideo c!emical .rocesses

• Do(e*erA t!atBs c!an/in/

Sot -ru))erstam. lit!o/ra.!,

?arallel assem)l, .rocesses

ena)le lo(cost a)rication o MEMS rom micro'nano com.onents made usin/ ot!er )atc!.rocesses " #!etero/eneous inte/ration$


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Microassembly Processes

?arallel assem)l, .rocesses .romiseine:.ensi*eA !i/!*olume !etero/eneous inte/ration o MEMSA CM7SAand .!otonics

Parallel Pick-and-Place

www.memspi.com, Chris Keller, Ph.D. MSE 1998

www.microassembly.com

Michael Cohn, Ph.D. EECS, 1997

Fluidic Self-assembly

Uthara Sriniasan, Ph.D., Chem.En!. "##1

Wafer-Level

Batch

Assembly

Many c!allen/es interconnect

/lue


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EE C245 – ME C218 Fall 2003 Lecture 11G

# Brie$ 'istory o$ MEMS(

1) Feynmann’s *ision

• ;ic!ard Fe,nmannA Caltec! -+o)el ?riHeA ?!,sicsA 195 6merican ?!,sical Societ, Meetin/A ecem)er 29A 1959

#!at (ant to tal& a)out is t!e .ro)lem o mani.ulatin/ andcontrollin/ t!in/s on a small scale " n t!e ,ear 2000A (!en t!e,loo& )ac& at t!is a/eA t!e, (ill (onder (!, it (as not until t!e ,ear190 t!at an,)od, )e/an seriousl, to mo*e in t!is direction$

#" 6nd (ant to oer anot!er .riHe " I1A000 to t!e irst /u,(!o ma&es an o.eratin/ electric motora rotatin/ electric motor(!ic! can )e controlled rom t!e outside andA not countin/ t!e leadin (iresA is onl, 1'4 inc! cu)e$

" !e !ad to .a, t!e electric motor .riHe onl, a ,ear later

• !tt.''(((H,*e:com'nanotec!'e,nman!tml


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+) Planar %, Technology• 1958 ;o)ert +o,ce – Fairc!ild and >ac& Jil), -+o)el ?riHeA ?!,sicsA

2000 e:as nstruments in*ent t!e inte/rated circuit• %, t!e earl, 190sA it (as /enerall, reco/niHed t!at t!is (as t!e (a,

to ma&e electronics small " and c!ea.er

Dar*e, +at!ansonand illiam +e(ellA

suracemicromac!inedresonant /ate transistorAestin/!ouseA 195

id Dar*e, !ear a)out;ic!ard Fe,nmanBs tal& in

1959K donBt t!in& so "


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Why Didn’t MEMS Ta-e &$$ in 19./

•;esonant /ate transistor (as a .oor onc!i.reuenc, reerence metals !a*e a !i/!tem.erature sensiti*it, and donBt !a*e a s!ar.resonance -lo( " s.eciic a..lication didnBt #l,$

• n 198A ;o)ert +e(com) -StanordA no( Mar,land.ro.osed and attem.ted to a)ricate a suracemicromac!ined electroma/netic motor ater seein/t!e estin/!ouse (or&

Ener/, densit, scalin/ or t!is t,.e o motor indicated

.erormance de/radation as dimensions (ere reduced "Materials incom.ati)ilit, (it! StanordBs Microelectronics La)

researc! ocus on electronic de*ices )ecame a ma@or issue

http://www.globaldenso.com/ABOUT/history/ep_91.htmlhttp://www.globaldenso.com/ABOUT/history/ep_91.html


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#nother 'istorical ,urrent(

Silicon Substrate 0Bul- Micromachining• 1950s silicon anisotro.ic etc!ants -e/A J7D

disco*ered at %ell La)s• Late 190s Done,(ell and ?!ili.s commercialiHe

.ieHoresisti*e .ressure sensor utiliHin/ a siliconmem)rane ormed ), anisotro.ic etc!in/

• 190sG0s researc! at Stanord on im.lanted silicon.ressure sensors ->im MeindlA neural .ro)esA and a(aerscale /as c!romato/ra.! -)ot! >im 6n/ell

• 1980s Jurt ?etersen o %M and e:Stanord students

Denr, 6llenA >im JnuttiA Ste*e err, !el. initiate Silicon=alle, #silicon microsensor and microstructures$industr,

• 1990s silicon in&@et .rint !eads )ecome a commodit,


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When the Time is Right 2• Earl, 1980s %er&ele, and isconsin demonstrate

.ol,silicon structural la,ers and o:ide sacriicialla,ers " re)irt! o surace micromac!inin/

• 1984 inte/ration o .ol,silicon microstructures (it!+M7S electronics

•198G %er&ele, and %ell La)s demonstrate.ol,silicon surace micromec!anismsN MEMS)ecomes t!e name in SN 6nalo/ e*ices )e/insaccelerometer .ro@ect

• 1988 %er&ele, demonstrates electrostaticmicromotorA stimulatin/ ma@or interest in Euro.eA>a.anA and SN %er&ele, demonstrates t!eelectrostatic com) dri*e


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Polysilicon Microstructures

• C %er&ele, 198182

R. T. Howe andR. S. Muller,ECS Spring Mtg.,

May 1982


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Polysilicon MEMS 3 4M&S %ntegration

•UC Berkeley 1983-1984

R. T. Howe andR. S. Muller,

IEEE IEDM,San Francisco,December 1984

Transresistanceamplifier

Capacitively driven

and sensed 150µm-longpolysilicon microbridge


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Polysilicon Electrostatic Micromotor

Selali/ned .in@ointA made.ossi)le ), conormal de.ositiono structural and sacriicial la,ers

?ro Me!ran Me!re/an,ACase estern ;eser*e ni*


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Electrostatic ,omb"Dri5e Resonators

• W. C. Tang and R. T. Howe, BSAC 1987-1988

New idea: structures movelaterally to surface

C. Nguyen andR. T. Howe,IEEE IEDM,Washington, D.C.,

December 1993


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#nalog De5ices #ccelerometers

• Integration with BiMOS linear technology

• Lateral structures with interdigitated parallel-plate sense/feedback capacitors

ADXL-05 (1995)

Courtesy of Kevin Chau,

Micromachined ProductsDivision, Cambridge


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EE C245 – ME C218 Fall 2003 Lecture 12G

Sur$ace Micromachining Foundries

M. S. Rodgers

and J. Sniegowski,Transducers 99

(Sandia Natl. Labs)

1 MC+C MM?S tec!nolo/, -im.orted rom %er&ele, 1992

2 Sandia SMMi= and = tec!nolo/ies 1998 – 4 and 5 .ol,Si le*el .rocesses

result more uni*ersitiesA com.anies do MEMS


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Sel$"#ssembly Processes

?ro > Ste.!en Smit!A C %er&ele, EECS e.t

6lien ec!nolo/iesA Oilro,A Calic!emicall, micromac!ined#nano)loc&$ silicon CM7Sc!i.lets all into minimum ener/,sites on su)strate

nano)loc&s )ein/ luidicall,selassem)ed into em)ossedmicro.oc&ets in .lastic antennasu)strate


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More Recent 'istory• Mec!anical en/ineers mo*e into MEMSA startin/ (it!

6l ?isano in 198G " e:.and a..lications and

tec!nolo/, )e,ond EEBs c!i.centric *ie(• 6;?6 su..orts lar/e .ro@ects at man, S

uni*ersities and la)s -1994 – 200K (it! a series ooutstandin/ .ro/ram mana/ers -J Oa)rielA 6 ??isanoA C an/A C C +/u,enA > E*ans

• CommercialiHation o inertial sensors -6nalo/e*ices and Motorola .ol,silicon accelerometers1991 P Q 108 ), eac! com.an, ), 2002

• Microluidics starts (it! ca.illar, electro.!oresis circa

1990N micrototal anal,sis s,stem -µ6S *ision ordia/nosisA sensin/A and s,nt!esis

• 7.tical MEMS )oom and )ust 1998 – 2002


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MEMS and 4anotechnology %

• ;ic!ard Fe,nmannBs 1959 tal&

#%ut it is interestin/ t!at it (ould )eA in .rinci.leA .ossi)le- t!in& or a .!,sicist to s,nt!esiHe an, c!emical su)stancet!at t!e c!emist (rites do(n Oi*e t!e orders and t!e.!,sicist s,nt!esiHes it Do(K ?ut t!e atoms do(n (!eret!e c!emist sa,sA and so ,ou ma&e t!e su)stance$

• Eric re:lerA 1980s *isionar, .romotin/ a molecularen/ineerin/ tec!nolo/, )ased on #assem)lers$ "!ad .a.er at irst MEMS (or&s!o. in 198G

• Earl, 1990s S MEMS communit, concerned t!at#arout$ nanotec! (ould )e conused (it! our ieldAunderminin/ credi)ilit, (it! industr, and /o*ernment


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MEMS and 4anotechnology %%

• %uc&,)allsA car)on nanotu)esA nano(iresA uantum

dotsA molecular motorsA " to/et!er (it! t!e atomicorce microsco.e -6FM as an e:.erimental tool S,nt!etic and #to.do(n$ nanotec!nolo/, earns res.ect o

MEMS communit,

• !, is nanotec!nolo/, interestin/K Molecular control o sensin/ interace -c!emical detection

S,nt!etic .rocesses .romise to create ne( )atc!a)ricationtec!nolo/ies

?lanar lit!o/ra.!, is reac!in/ into t!e nano re/ime -stateot!e are is 50 nm line's.aceN s.acer lit!o/ra.!, !as reac!edG nm

+e( com.utational de*ices neuralA uantum com.utin/


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1 6'7 4EMS Resonator Si dou)leended tunin/ or&

tine (idt! R 35nmlen/t! R 500 nmt!ic&ness R 50 nm

nterconnect .arasiticelements are critical need near), electronics

ses *ertical c!annelF+FE

.rocess on S7 su)strate

SOI

resonator

Sense

electrode

Drive

electrode

SOI

L C!an/A S %!a*eA > Jin/A and ; Do(eC %er&ele, -un.u)lis!ed


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MEMS 04EMS/ Memory( %BM’s Milli8ede

6rra, o 6FM ti.s (rite and read )its

.otential or lo( and ada.ti*e .o(er


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Electrostatic 4EMS Motor

6le: ettlA C %er&ele,A ?!,sics e.tA >ul, 2003

500 nm

multi(alled car)on nanotu)erotar, slee*e )earin/


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4anoga8 D4# unctions

• e*elo.ment o ultraast and ultrasensiti*e dielectric +6 detection

• 6..lications to unctional /enomics or .roteomics c!i.sA as (ell as ane:.loration o nano/a. +6 @unction)ased inormation stora/e andretrie*al de*ices

%nsulator

Si:4;

Poly Si 0%%

Poly Si 0%

4anoga80 to < nm1

4ano$luidic4et=or- $or

D4# Tra88ing &utlet

%nlet4anoga8

9unction arraysElectrodes

D4#

4anoga8 Electrodes

4anoga89unction

Luke P. Lee and Dorian Liepmann, BioEng.

Jeff Bokor, EECS


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&88ortunities in Blurring

the MEMS>4EMS Boundary

• 6//ressi*e e:.loitation o e:tensions o #to.do(n$.lanar lit!o/ra.!ic .rocesses

• S,nt!etic tec!niues create ne( materials andstructures -nano(iresA C+ )earin/s

• Selassem)l, conce.ts (ill .la, a lar/e role incom)inin/ t!e to.do(n and )ottomu. tec!nolo/ies

• 6..lication mainstream inormation tec!nolo/, (it!.o(er consum.tion )ein/ t!e dri*er

#%e,ond CM7S$ " reall,A e:tensions to CM7S 2015+on*olatile memories

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