Horizontal Deflection Transistors

18
Horizontal-Deflection Output Transistors PRODUCT GUIDE

Transcript of Horizontal Deflection Transistors

Page 1: Horizontal Deflection Transistors

Horizontal-DeflectionOutput Transistors

PRODUCT GUIDE

Page 2: Horizontal Deflection Transistors

3

1

The photographs below show the products and their markings. The packages shown are is the straight-lead packages used for standard products.

Appearance

Package dimensions (Unit : mm)

TO-3P(H)IS TO-3P(LH)

TO-3P(LH)TO-3P(H)IS

Outline

2 Appearance, Package and Weight

Toshiba has developed a range of fifth-generation horizontal-deflection-output transistors (HV-Trs). Radical redesign of the emitter electrode and the contact pattern has yielded significant improvements, resulting in higher current density and superior electrical characteristics compared to those of fourth-generation products. Toshiba’s propriety glass-mesa structure results in a high breakdown voltage. Thanks to Toshiba’s wealth of experience and the wide variety of products which the company can offer, Toshiba horizontal-deflection-output transistors are used World-wide in color TVs and video display monitors.

ge

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ge

ge

ge

ge

ge

ge

ge

ge

ge

ge

ge

ge

ge

ge

2SC5411

5.5g ( typ. )

2SC5570

9.75g ( typ. )

3.6 ± 0.3 3.0 ± 0.315.5 ± 0.5

4.0

2.3 max

5.45

1 2 3

5.45

0.95 max

4.5

10.0

26.5

± 0

.5

22.0

± 0

.5

23.0

5.5

± 0.

3

2.0

3.3

0.9

– 0.

1 +

0.2

5

16.4

min

1.2

2.5

2.0

10˚

10˚

5˚5˚

1. Base2. Collector3. Emitter

20.5 max 3.3 ± 0.2

26.0

± 0

.520

.0 ±

0.6

6.0

11.0

1.5

4.0

2.0

2.50

3.0

1.0 – 0.25

5.45 ± 0.15 5.45 ± 0.15

+ 0.3

2.5

1 2 3

0.6

– 0.

10 +

0.2

5

1.5

2.8

5.2

max

2.0

1. Base2. Collector (heat sink)3. Emitter

1.5

Page 3: Horizontal Deflection Transistors

4

3

High breakdown capability

Device Trends

4

Fifth generation of horizontal-deflection output transistors

Fourth generation of horizontal-deflection output transistors

TV Wide-screen TVsHDTVs / Projectors

Multimedia-compatible TVsDigital TVs

Video display monitors

• Wide-screen aspect ratio: (4 : 3) –> (16 : 9)• Large screen size• Flat screen• Low loss• Lower prices

• Enhancement of 1700 V product line• Low price due to reduction in chip size

• Development of 2000-V products• Development of products incorporating diodes for use in digital TVs • Shorter trr• Reduced saturation voltage VCE(sat) = 3 V (max)• High-current devices housed in TO-3P(H)IS packages 21-A products available• Reduced variation in product characteristics

• Reduced switching loss (tf parts) due to high-frequency operation tf = 150 ns (max)• Reduced saturation voltage at high currents VCE(sat) = 3 V (max)• High-current devices housed in TO-3P(H)IS packages 21-A products available• Increased allowable power dissipation TO-3P(H) IS 65 W –> 75 W TO-3P(LH) 200 W –> 220 W• Reduced variation in product characteristics

• Improved in screen resolution quality Screen resolution: 525p, 1125i, 780p Progressive system is improved Starting grand wave digital broadcasting Various appllications such as DVDs and Cable TVs• Various screen size• Flat screen• Low loss

• High horizontal frequency 21 inches fH = 120 kHz –> 135 kHz• Large screen size Standard size: 15 inches –> 17 inches• Low price Reduced part count (driving circuit and resonating capacitor are fixed)• Low loss• Flat screen

Market requirements

Emitter contact shape and chip size optimization

Market trends and the development of horizontal-deflection output transistors

Conventional comb type The product features a glass mesa structure,the use of which yields a wide forward- and reverse-biased safe operating area.

Chip design has been optimized using Toshiba simulation technology. The emitter's contact area has been widened by changing the contact shape below the emitter electrode from comb type to the new mesh type. As a result, the saturation voltage (VCE(sat)) and fall time (tf) have both been reduced, thus reducing switching loss.

1

Low saturation voltage

VCE(sat) = 3 V (max)Note: Used for 2SC-Series devices without damper diodes.

2

Wider range of optimum drive conditions

Fluctuation in optimum drive conditions due to variation in device quality has been minimized for ease of design.

3

Revised emitter contact shape and optimized chip size3

Fourth and fifth-generation mesh type

Toshiba’s proprietary “glass mesa” structure Contact shape

Development of Horizontal-Deflection Output Transistors

Device Trends

Features of Fourth and Fifth Generation

Emitter

Collector

BaseGlasspassivation

N+

P

N–

N+

B E

B E

Page 4: Horizontal Deflection Transistors

5

s

s

d)

ype

ration

e

on

5 Comparison of Product Characteristic Curve, Features and Emitter-Contact Design

Generation

•Main application

• Features

Design

Emitter contact shape

Typical Products and Waveforms

TVs Video displays

First Generation•TVs • High-voltage 1500 V • Improved R-SOA • Improved switching speeds fH(max) = 32 kHz • Development of TO-3P(H)IS Package

Second Generation•TVs • High-current devices products

•Video displays • Improved switching speeds fH(max) = 64 kHz • Development of TO-3P(LH) Package

Third Generation•TVs • Improvements over first-generation products•Video displays • Improvements over second-generation products • Improved switching speeds fH(max) = 80 kHz

Fourth Generation•TVs • Improvements over first- and third-generation products•Digital TVs • Development of new 2000-V products•Video displays • Improvements over third-generation products • Improved switching speeds fH(max) = 130 kHz

Fifth Generation•Digital TVs • Enhanced 2000-V product line • Improved speeds for products incorporating damper diodes•Video displays • Improvements over fourth-generation products • Reduced loss • Improvement in drivability

Comb type I 2SD1556 (1500 V / 6A)

2SD2253 (1700 V / 6A)

2SD2553 (1700 V / 8A)

2SD2638 (1700 V / 7A)

2SC4290A (1500 V / 20A)

2SC5142 (1500 V / 20A)

2SC5445 (1500 V / 20A)

2SC5695 (1500 V / 22A)

STRIPE type

Comb type II

Mesh type I orCrystal-mesh type

Mesh type II

@fH, ICP, IB1(end), VCP

(t, IC, VCE) / div

@15.75kHz, 5A, 1A, 1200V

(200ns, 1A, 10v) / div

@100kHz, 8A, 1A, 1200V

(50ns, 1A, 10v) / div

B E

B E

B E

B E

B E

IC

tf LossOA, OV tstg Loss

VCE

IC

tf LossOA, OV tstg Loss

VCE

IC

tf LossOA, OV tstg Loss

VCE

IC

tf LossOA, OV tstg Loss

VCE

IC

tf LossOA, OV tstg Loss

VCE

IC

tf LossOA, OV tstg Loss

VCE

IC

tf Loss

OA, OV tstg Loss

VCE

IC

tf Loss

OA, OV tstg Loss

VCE

Page 5: Horizontal Deflection Transistors

6

6 New Products

7 Product Line Matrix

For video displays1

For color TVs2

For digital TVs3

Product No.Maximum Ratings

(V) (A) (W)VCBO IC PC Target Use Remarks Note

2SC55702SC55872SC55882SC55892SC55902SC56952SC5717*(S3D20)*(S3D21)

170015001700150017001500150015001700

21-inch, 130 kHz19-inch, 110 kHz19-inch, 90 kHz19-inch, 120 kHz19-inch, 100 kHz21-inch, 130 kHz19-inch, 120 kHz19-inch, 92 kHz21-inch, 130 kHz

Device with highest IC (max) ratingsHigh-current version of 2SC54111700-V version of 2SC54112SC5587 and 2SC5589 use same chip. 2SC5588 and 2SC5590 use same chip. Equivalent to 2SC54452SC5717 and 2SC5695 use same chip.Equivalent to 2SC5411Equivalent to 2SC5570

281715181622211428

2207575

200200200

7555

210

Product No.Maximum Ratings

(V) (A) (W)VCBO IC PC Target Use Remarks Note

2SC55702SC55882SC55902SC56122SC5716

*(2SC5748)*(2SC5749)

*(S3D21)

17001700170020001700200020001700

32-inch, 32 kHz˜24-inch, 32 kHz28-inch, 32 kHz˜32-inch, 32 kHz32-inch, 32 kHz32-inch, 32 kHz32-inch, 32 kHz32-inch, 32 kHz˜

Package

2SD25992SD25862SD2499S2055N2SD25392SC5339

2SC52802SD2559

2SD2550

2SD2551

2SD26382SD25532SC5716

2SD2498S2000N

2SD25002SC53862SC54042SC53872SC5411*(S3D20)

2SC5587

2SC5717

2SC5421

2SC55892SC54452SC5695

2SC5422

2SC55902SC5446

2SC5570*(S3D21)

2SC5588 *(2SC5749) *(2SC5748)

2SC5612

TO-3P(H)IS40 W to 75 W

TO-3P(H)IS40 W to 75 W

TO-3P(LH)180 W to 220 W

TO-3P(LH)180 W to 220 W

TO-3P(LH)180 W to 220 W

3 A3.5 A

4 A4.5 A

5.5 A

7 A8 A

12 A14 A15 A17 A

PC

**IC (sat)

Device with highest IC (max) ratings1700-V version of 2SC54112SC5588 and 2SC5590 use same chip. VCBO = 2000 V series Built-in damper diode (High-current version of 2SC5143)VCBO = 2000 V series VCBO = 2000 V series (built-in damper diode) Equivalent to 2SC5570

28151622

8161628

2205050

22055

210210210

Product No.Maximum Ratings

(V) (A) (W)VCBO IC PC Target Use Remarks Note

2SD2638 1700 28-inch, 15.75 kHz Equivalent to 2SD25537 50

VCBO = 1500 V VCBO = 1700 V VCBO = 2000 V

5 A

6 A

11 A

22 A

Built-indamper diode

No built-indamper diode

No built-indamper diode

Built-indamper diode

No built-indamper diode

No built-indamper diode

Built-indamper diode

No built-indamper diode

Notes: **: IC(sat) is value of IC for VCE (sat).: 3rd generation (old design): 4th generation (new design): 5th generation (new design): 5th generation (new design under development)*( )

: Production schedules are provisional.

: Production schedules are provisional.

Page 6: Horizontal Deflection Transistors

7

Note

Note

C5749) *(2SC5748)

2SC5612

TO-3P(LH)180 W to 220 W

C5143)

Note

VCBO = 2000 V

lt-inr diode

No built-indamper diode

chedules are provisional.

chedules are provisional.

*( )

82SC Series1

Min Max @5V/ICGene-ration@ IC @ IB

Maximum Ratings

2SC52802SC53392SC53862SC53872SC54042SC54112SC54212SC54222SC54452SC54462SC55702SC55872SC55882SC55892SC55902SC56122SC56952SC57162SC5717*(2SC5748)*(2SC5749)*(S3D20)*(S3D21)

1500

1500

1500

1500

1500

1500

1500

1700

1500

1700

1700

1500

1700

1500

1700

2000

1500

1700

1500

2000

2000

1500

1700

8

7

8

10

9

14

15

15

20

18

28

17

15

18

16

22

22

8

21

16

16

14

28

50

50

50

50

50

60

180

200

200

200

200

75

75

200

200

220

200

55

75

210

210

55

210

4.0

4.0

4.3

4.3

4.0

4.0

4.0

4.5

4.5

4.0

4.5

5.0

4.8

5.0

4.8

4.8

4.5

3.8

4.5

4.8

4.8

4.0

4.5

8.5

8.0

7.5

7.8

8.0

8.0

8.0

8.5

8.5

8.0

7.5

8.0

8.0

8.0

8.0

9.0

8.5

9.0

8.5

7.5

9.0

8.0

7.5

5

5

3

3

3

3

3

3

3

3

3

3

3

3

3

3

3

5

3

3

3

3

3

6

5

6

8

7

11

11

11

15

14

22

14

12

14

12

17

17

6

17

12

12

11

22

1.5

1.25

1.5

2

1.75

2.75

2.75

2.75

3.75

3.5

5.5

3.5

3

3.5

3

4.25

3.75

1.5

3.75

3

3

2.75

5.5

6.0

6.0

3.5

3.5

3.5

3.5

3.5

3.5

2.2

2.3

1.6

2.0

2.0

2.0

2.0

5.0

2.1

5.0

2.1

5.0

5.0

3.5

1.6

0.50

0.50

0.30

0.30

0.30

0.30

0.30

0.30

0.15

0.15

0.15

0.15

0.15

0.15

0.15

0.35

0.15

0.35

0.15

0.35

0.35

0.30

0.15

32

32

64

64

64

64

64

64

100

100

130

100

100

100

100

32

100

32

100

32

32

90

130

6.0

5.0

5.0

6.0

5.5

8.5

8.5

8.0

8.0

7.0

8.0

7.5

6.5

7.5

6.5

8.0

8.0

5.5

8.0

8.0

8.0

6.5

8.0

4th

4th

4th

4th

4th

4th

4th

4th

4th

4th

4th

4th

4th

4th

4th

4th

5th4th

5th5th5th5th5th

6

5

6

8

7

11

11

11

15

14

22

14

12

14

12

17

17

6

17

12

12

11

22

Characteristics List

(V)VCBO

VCE(sat) MaxhFE Switching Time (Max)

(A)IC

(W)PC

(–) (A) (V) (A) (A)tstg tf(µs) (µs)

@ fH @ Icp(kHz) (A)(–)

2SD Series2

Min Max @5V/ICGene-ration@ IC @ IB

Maximum Ratings

2SD24982SD24992SD25002SD25392SD25502SD25512SD25532SD25592SD25862SD25992SD2638

1500

1500

1500

1500

1700

1700

1700

1500

1500

1500

1700

6

6

10

7

4

5

8

8

5

3.5

7

50

50

50

50

50

50

50

50

50

40

50

5

5

4

5

8

5

5

5

4.4

8

4.5

9

9

8

9

22

10

9

9

8.5

25

7.5

5

5

3

5

8

5

5

5

5

8

5

4

4

6

5

3

4

6

6

3.5

3

5.5

0.8

0.8

1.5

1

0.8

0.8

1.2

1.2

0.8

0.8

1.2

10

11

11

9

10

10

12

12

10

10

9

0.7

0.6

0.7

0.6

0.6

1.0

0.7

1.0

0.6

1.0

0.8

15.75

15.75

15.75

15.75

15.75

15.75

15.75

15.75

15.75

15.75

15.75

4

4

6

5

3

4

6

6

3.5

3

5.5

3rd

3rd

3rd

3rd

3rd

3rd

3rd

4th

4th

4th

4th

4

4

6

5

1

4

6

6

3.5

0.5

5.5

(V)VCBO

VCE(sat) MaxhFE

(A)IC

(W)PC

(–) (A) (V) (A) (A)tstg tf(µs) (µs)

@ fH @ Icp(kHz) (A)(–)

S2000 / S2055 Series3

Min Max @5V/ICGene-ration@ IC @ IB

Maximum Ratings

S2000NS2055N

1500

1500

8

8

50

50

4.5

4.5

9

9

5

5

4.5

4.5

1

1

12

11

0.7

0.6

15.75

15.75

4.5

4.5

3rd

3rd

4.5

4.5

(V)VCBO

VCE(sat) MaxhFE

(A)IC

(W)PC

(–) (A) (V) (A) (A)tstg tf(µs) (µs)

@ fH @ Icp(kHz) (A)(–)

Product No.Built-indamperdiode

Switching Time (Max)Built-indamperdiode

Switching Time (Max)Built-indamperdiode

Product No.

Product No.

: 3rd generation (old design): 4th generation (new design): 5th generation (new design): 5th generation (new design under development)

Page 7: Horizontal Deflection Transistors

8

9

2SC Series

ExampleGenerations

1

2SD / S2000 / S2055 Series2

2SC5411: (H)

*(S3D20) : (H)

2SC5421: (LH)

2SC5588: (H)

2SC5590: (LH)

2SC5422: (LH)

*(2SC5748) : (LH)

*(2SC5749) : (LH)

2SC5612: (LH)

2SC5387: (H)

2SC5386: (H)

2SC5280: (H)

2SC5404: (H)

Application Map (Reference only)

: 3rd Gen. (old design)

: 4th Gen. (new design)

: 5th Gen. (new design)

: under development 2SCXXXX

*(2SCXXXX)2SCXXXX2SDXXXX

#

#

#

$

¥$

$

2SD2559: (H)

2SD2500: (H)

2SD2553: (H)

¥

¥#

2SD2551: (H)

2SD2498: (H)

2SD2499: (H)

¥#

¥

2SD2550: (H)

2SD2599: (H)

¥#

¥#

S2000N: (H)

S2055N: (H)¥

2SD2638: (H)¥#

2SD2539: (H)¥

2SD2586: (H)¥

2SC5717: (H)

2SC5445: (LH)

2SC5695: (LH)

¥

*(S3D21): (LH)

2SC5570: (LH)

#

#

2SC5587: (H)

2SC5589: (LH)

2SC5446: (LH)#

Rec

omm

ende

d P

eak

Col

lect

or C

urre

nt fo

r A

ctua

l Use

Icp

(A)

Horizontal Frequency fH (kHz)

Horizontal Frequency fH (kHz)

Rec

omm

ende

d P

eak

Col

lect

or C

urre

nt fo

r A

ctua

l Use

Icp

(A)

2SC5339: (H)

2SC5716: (H)

¥

¥#

0

8

7

6

5

4

3

2

1

020 40 60 80 100 120 140

0

24

22

20

18

16

14

12

10

8

6

4

2

020 40 60 80 100 120 140

Note

¥ : Built-in damper fH (max) = 32kHz @without additional Damper diode

# : VCBO = 1700V$ : VCBO = 2000V (Another 1500V)

(H) : TO-3P(H)IS (Full mold type)(LH) : TO-3P(LH)

VCBO

DAMPER

PACKAGE

Note

¥ : Built-in damper fH (max) = 32kHz @without additional Damper diode

# : VCBO = 1700V$ : VCBO = 2000V (Another 1500V)

(H) : TO-3P(H)IS (Full mold type)(LH) : TO-3P(LH)

VCBO

DAMPER

PACKAGE

Page 8: Horizontal Deflection Transistors

9

only)

design)

ment

Hzonal

V)

pe)

Hzonal

V)

pe)

10 Basic Circuit Structure and Operating Waveform of Horizontal-Deflection Output

Measurement conditions

Basic circuit structure

Measurement range

Enlarged wave forms of IB and IC

VBE (Base-emitter voltage)

IB (Base current)

IC (Collector current)

– IE (Reverse emitter current)

IF (Forward current)

VCE (Collector-emitter voltage)

ILY (Deflection coil current)

ICY (Resonance capacitor current)

fH = 69 kHz (duty 50%)ICP = 5 AVCP = 1200 V

t (time)X-axis

Y-axis

2µs / div

5V / div

2A / div

2A / div

2A / div

2A / div

200V / div

2A / div

2A / div

Main operations

HV-Tr operation HV-Tr operation

Cy operation

Cy operation

Damper diodeoperation

Damper diodeoperation

Operating waveform example

VCP

ICP

IB1(end)

ts

ILy

ICy

tr

tf

OV

OA

OA

OA

OA

OA

OA

OV

IF (Damper diode)

– IE

IC

IB

IB2

VBE

ts t r

VCE(HV-Tr)–VF(Damper-diode)

tstg

0.9 x ICP

0.1 x ICP

2µs / div

dIB/dt =IB1(end) + IB2

tstg

tr = π Ly Cy

SBD

LyCy

ILy

VCCHV-Tr

Drive Circuit

Damper diode

IF

IEVBE

VCE(HV-Tr)–VF(Damper diode)

IB

IC ICy

IB2

0.9 x ICP

0.1 x ICP

ICP

IC

IB

IB1(end)

tstg

tf

OA

OA

Page 9: Horizontal Deflection Transistors

10

11 Switching Data of 2SC5695 (Reference only)

Test condition1

Test sample2

tstg, tf, –dIB / dt, SW loss –– IB1 (end)3

@ TC = 25˚C fH = 105 kHz (duty 50%, continuous opration) ICP = 6.5 A VCP = 953V (Vcc2 = 107 V) ICP = 8.5 A VCP = 1220V (Vcc2 = 140 V)

Mark TestSample

hFE (1)

ICP = 6.5 A ICP = 8.5 AStanderd spec.

tail sideTyp

storage side

50.533.824.1

15.612.18.2

8.26.64.6

0.4V0.6V2.9V

20 (min) 50 (max) 8 (min) 17 (max) 4.8 (min) 8.3 (max) 3V (max)@5V / 2A @5V / 10A @5V / 17A @17A / 4.25A

hFE (2) hFE (3) VCE (sat)

–dIB / dt = 4.0A/µs (VCC1 = 24V)Ly = 63 µH, Cy = 4000 pF

· · ·

·· ·· ·

· ·· ·

0.4

0.8

1.2

1.6

2

2.4

0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0

40

80

120

160

200

240

280

0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0

3.0

3.4

3.8

4.2

4.6

0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0

4

6

8

10

12

14

0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0

tstg

(µs

)tf

(ns)

SW

loss

(W

)

IB1 (end) (A)

–dI B

/ d

t (A

/µs)

ICP = 6.5 A

tf (max) = 140 ns

ICP = 8.5 A

ICP = 6.5 A

ICP = 8.5 A

ICP = 6.5 A

ICP = 8.5 A

ICP = 6.5 A

ICP = 6.5 ABest condition area

ICP = 8.5 ABest condition area

SW loss (max) = 11 W

· ·

· ·

· ·

tstg (max) = 1.9 µs ICP = 8.5 A

Page 10: Horizontal Deflection Transistors

11

only)

VVV

max)25Asat)

11 Switching Data of 2SC5695

12

Recomended values (rough calculation)4

tstg (max) = (1/fH) x 0.2

Operating waveform example (21-inch ultra-high-resolution monitor) fH = 32 kHz to 100 kHz monitor

Application Circuit Example of 2SC5695

Y-axis

tf (max) = (1/fH) x 0.01 + 50ns

thermal resistance

TOTAL ( junction on ari): Rth ( f-a) = 5.125˚C/W

junction to case: Rth ( j-c) = 0.625˚C/W (2SC5695) case to fin (heat-sink): Rth (c-f) = 1˚C/W (supposition)+) fin (heat-sink) to air: Rth ( f-a) = 3.5˚C/W (supposition)

SW Loss Capasitance (max) = ∆Tj (max)/Rth (j-a) x 80% derating = 70/5.125 x 0.8 = 10.9

tstg (max) = 1.9µs· ·

tf (max)

Switching loss capacitance (max),@Ta (max) = 40˚C, Tj (max) = 110˚C Recommended

∆Tj (max) = 110˚C – 40˚C ∆Tj (max) = 70˚C Recommended

tstg (max)

tf (max) = 140 ns· ·

SW loss Capasitance (max) = 11 W

100 ns / div500 ns / div

IB : 1 A / div VCE : 200 V / divIC : 1 A / div

IB : 1 A / div VCE : 10 V / divIC : 1 A / div

X-axis

@ fH = 32 kHz Icp = 9 A IB1 (end) = 0.75 A dIB / dt = 3.5 A / µs

· ·

· ·

@ fH = 100 kHz Icp = 8 A IB1 (end) = 1. 1 A dIB / dt = 3.8 A / µs

· ·

· ·

· ·

10 v

0 v

duty 50 %MOSFET

C1

C2R1 R2 R4

R3

SBD

Cy Ly L

IB

IC

HV-Tr

DamperdiodeVCE

Vcc 1 Vcc2Semiconductors devices MOSFET : 2SK2146 SBD : 3GWJ42C HV-Tr : 2SC5695 Damper diode : 5TUZ52

Others Vcc1 15 V Vcc2 47 V (@ 32 kHz) 156 V (@ 100 kHz) Cy = 4500 pF Ly = 80 µH

R1 = 200 ΩR2 = 3 ΩR3 = 1.85 ΩR4 = 15 ΩC1 = 200 pFC2 = 3.3 µF L = 10 mH

100 ns / div

IB: 0

IBIC: 0

VCE: 0

IC

VCE

100 ns / div

IB: 0

IB

IC: 0VCE: 0

IC

VCE

500 ns / div

IB: 0

IB

IC: 0VCE: 0

IC

VCE

500 ns / div

IB: 0

IBIC: 0

VCE: 0

IC

VCE

Page 11: Horizontal Deflection Transistors

12

TO-3P(H)IS (Unit : mm)

13

2-16E311A 2-16E313A

2-16E307A 2-16E309A

2-16E305A 2-16E306A

2-16E302A 2-16E303A

Lead-Forming

5.45

1

2

3

5.45 4.0 4.0

1. Base2. Collector3. Emitter

8.0

15.2

±0.8

10.2

±0.6

(2.2

5)(2

.75)

5.45

1

2

3

5.45

1. Base2. Collector3. Emitter

4.95 ± 0.5 4.45 ± 0.5

9.4 ± 0.5

7.0

± 0.

5

1.8

(8.5

)

(8)

5.45

1

2

3

5.45

1. Base2. Collector3. Emitter

13.0

± 0

.5

5.3 ± 0.5

1.25

5.45

1

2

3

5.45

1. Base2. Collector3. Emitter

7.0

± 0.

56.

5 ±

0.5

5.6 ± 0.5 6.9 ± 0.5

2.5

5.45

1 2 3

5.45

1. Base2. Collector3. Emitter

15.4

± 0

.5

5.45

1

2

3

5.45

1. Base2. Collector3. Emitter

15 ±

1

6.5

± 0.

5

5.3 ± 0.5

1.25

5.45

1

2

3

5.45

1. Base2. Collector3. Emitter

15.4

± 0

.5

6.5

± 0.

56.

55 m

in

5.3 ± 0.5

1.25

5.45

1

2

3

5.45

1. Base2. Collector3. Emitter

4.95 ± 0.5 4.45 ± 0.5

9.4 ± 0.5

3.3

± 0.

5

2.2

(11)

(10.

5)

Page 12: Horizontal Deflection Transistors

13

nit : mm) TO-3P(H)IS (Unit : mm)

TO-3P(LH) (Unit : mm)

2-21F208A 2-21F218A

2-16E316A

2-16E314A 2-16E315A

13

5.45

1

2

3

5.45

1. Base2. Collector3. Emitter

4.95 ± 0.5 4.45 ± 0.5

9.4 ± 0.57.

0 ±

0.5

35.4

± 1

.0

2.0

5.45

1

2

3

5.45

1. Base2. Collector3. Emitter

4 ± 0.5 4 ± 0.5

8.0 ± 0.5

2.75

+ 1

.010

.2 –

0.5

2.25

5.45

1 2 3

5.45

1. Base2. Collector3. Emitter

10.3

5 ±

0.5

1.0.5 ± 0.5 2.95 ± 0.5

0.82 ± 0.5

4.0 ± 0.5

5.85

± 0

.5

5.45 ± 0.15 5.45 ± 0.15 5.45 ± 0.6

20.0

± 0

.6

17.0

± 0

.86.

5 ±

0.6

1

2

3

1. Base2. Collector (heat sink)3. Emittor

3.0

5.45 ± 0.15 5.45 ± 0.15

8.0 ± 1.0

18.5

± 0

.8

7.0

± 0.

8

3.5

± 0.

5

4.0 ± 0.54.0 ± 0.5

1

2

3

1. Base2. Collector (heat sink)3. Emitter

Page 13: Horizontal Deflection Transistors

14

14 Markings

15

Explanation of markings Toshiba horizontal-deflection output transistors are manufactured in Japan (at the Himeji Semiconductor Works) and in Malaysia (at Toshiba Electronics Malaysia Sdn. Bhd.). Toshiba Electronics Malaysia Sdn. Bhd. only manufactures TO-3P(H)IS products.

Place of ManufactureTOSHIBA ELECTRONICSMALAYSIA SDN. BHD(made in Malaysia)

Himeji Semiconductor Works(made in Japan)

Package type TO-3P(H)IS TO-3P(LH)

Marking Example

Definition

*1: Manufacturer’s marking: “T”, “ ”, “TOSHIBA”

*2: Product number or abbreviated product number

*3: Code: “1”, “2”, “3”, “A”, “B”, “C”

*4: Lot number: month and year of manufacture Month of manufacture: January to December are denoted by the letters A to L respectively. Year of manufacture: last decimal digit of year of manufacture “1A”, as shown on the above package, indicates manufacture in January 2001.

*5: Country of origin Since TO-3P(LH) packages are only made in Japan, “JAPAN” is displayed.

Package Label

Sample label

(As of April 2001)

(As of April 2001)

TOSHIBA

C54112 1A

*4

*1

*3

*2

TOSHIBA

JAPAN

2SC5570

1A2

*5

*3

*4

*1

*2

P/N:TYPE

ADDC Q,TY PCS.

NOTE

MADE IN JAPAN

BARCORD

Page 14: Horizontal Deflection Transistors

15

Works) d. only

vely.

2001)

2001)

Package type TO-3P(H)IS TO-3P(LH)

16 Package Specifications

Packing Type 100 per tray, 5 trays per carton

Tray Dimensions(unit: mm)

Carton Dimensions(unit: mm)

Tolerance: ±0.7Material: rigid vinyl chloride

Tolerance: ±0.7Material: rigid vinyl chloride

(As of April 2001)

19

290

6116

8

67.6

76

184

286

14

290

2412.4

52 72.5

184

1927 21

Label

190

85 305

Label

190

116 303

Page 15: Horizontal Deflection Transistors

16

172SC Series1

ProductNo.

Super-sededProducts

Discon-tinuedProducts

FinalPhaseProducts

Built-indamperdiode

@ IC(A)

@ IB(A)

Maximum Ratings RecommendedReplacementand Remarks

Package TypeVCE(sat) (V)

2SC37152SC37162SC3884A2SC3885A2SC3886A2SC38872SC3887A2SC38882SC3888A2SC38892SC3889A2SC38922SC3892A2SC38932SC3893A2SC42882SC4288A2SC42892SC4289A2SC42902SC4290A2SC45312SC45322SC45422SC45602SC46082SC47572SC47582SC47592SC47602SC47612SC47622SC47632SC47642SC47652SC47662SC48062SC48302SC49162SC50482SC51292SC51422SC51432SC51442SC51482SC51492SC51502SC53312SC5332

2SD2599;2SD2599;2SC5386;2SC5386;2SC5386;2SC5386;2SC5386;2SC5386;2SC5386;2SC5386;2SC5386;2SC5339;2SC5339;2SC5280;2SC5280;2SC5421;2SC5421;2SC5589;2SC5589;2SC5589;2SC5589;2SC5280;2SC5422;2SC5404;2SC5404;2SC5422;2SC5386;2SC5386;2SC5404;2SC5612;2SC5588;2SC5280;2SC5280;2SC5339;2SC5716;2SC5716;2SC5588;2SC5386;2SC5280;2SC5387;2SC5386;2SC5589;2SC5716;2SC5590;2SC5386;2SC5339;2SC5588;2SC5421;2SC5422;

VCBO(V)

MaxIC(A)

PC(W)

(H)IS (BS) (LH) TO-3

1500150015001500150014001500140015001400150014001500140015001400150014001500140015001500170015001500170015001500150020001700150015001500170017001700150015001500150015001700170015001500170015001700

456786677887788

12121616202010101010878

108678656567

1210201020128

101514

2.534564455665566

101012121414787765676

4.5564

3.54.53.5

4586

146

1185698

0.60.8

11.21.5

11

1.21.21.51.51.21.21.51.52.52.5

33

3.53.51.7

21.71.71.51.21.51.71.51.3

11.20.8

11.3

1112

1.53.51.5

2.752

1.31.5

2.252

5555555555555555555555555555555555555553333335333

505050505080808080808050505050

20020020020020020050

2005080

200505050

2005050505050505050505050

20050

200505050

180200

2122222225511115522223215221122132222211113121222

5555

List of Superseded, Final-Phase and Discontinued Products

Notes: : 1st generation : 2nd generation (final-phase or discontinued products) : 3rd generation (old design superseded products) : 4th generation (new design)

(As of April 2001)

*

Electrical characteristics and packages are same.Electrical characteristics have are high grade.Electrical characteristics are low grade.Package (allowable power disspation) are high grade.Package (allowable power disspation) are low grade.Damper diode is built-in or not.

123456

( * )

Page 16: Horizontal Deflection Transistors

17

ndedent

arks

9;9;6;6;6;6;6;6;6;6;6;9;9;0;0;1;1;9;9;9;9;0;2;4;4;2;6;6;4;2;8;0;0;9;6;6;8;6;0;7;6;9;6;0;6;9;8;1;2;

2122222225511115522223215221122132222211113121222

5555

s)

2001)

2SD Series2

S2000 / S2055 Series3

ProductNo. @ IC

(A)@ IB(A)

Maximum Ratings RecommendedReplacementand Remarks

VCBO(V) MaxIC

(A)PC(W)

(H)IS (BS) (LH) TO-3

9001500150015001500150015001400150015001400150015001500150015001500150015001500150015001500150015001500150015001500150015001500150017001500150017001700

62.53.5

567

2.53.5

56

102.53.5

56

2.53.5

567

2.53.5

5678

2.53.5

56

3.55668

1087

2.523456234582345234562345682345

2.23.5

556766

0.250.60.80.8

11.20.60.80.8

12

0.60.80.8

10.60.80.8

11.20.60.80.8

11.2

20.60.80.8

10.70.8

11

1.21.41.21.2

108855588555885588555885555885515555555

505050505050505050505080808080808080808040405050505040405050405050505050

20050

56622225111251555555221111211111113351

5

5

2SD8112SD8182SD8192SD8202SD8212SD8222SD8682SD8692SD8702SD8712SD12792SD14252SD14262SD14272SD14282SD14292SD14302SD14312SD14322SD14332SD15432SD15442SD15452SD15462SD15472SD15482SD15532SD15542SD15552SD15562SD20892SD20952SD21252SD22532SD23482SD23492SD24282SD2454

2SC3657;2SD2599;2SD2599;2SC5386;2SC5386;2SC5386;2SD2599;2SD2599;2SD2499;2SD2539;2SC5404;2SD2599;2SD2599;2SD2499;2SD2539;2SD2498;2SD2498;2SD2498;2SC5386;2SC5404;2SD2498;2SD2498;2SD2498;2SC5386;2SC5404;2SC5404;2SD2599;2SD2599;2SD2499;2SD2539;2SD2599;2SD2586;2SD2539;2SD2638;2SC5280;2SC5280;2SD2553;2SD2638;

ProductNo. @ IC

(A)@ IB(A)

Maximum Ratings RecommendedReplacementand Remarks

VCBO(V) MaxIC

(A)PC(W)

(H)IS (BS) (LH) TO-3

15001500150015001500140015001500

55555555

4.54.54.54.54.54.54.54.5

22222222

51155115

8080505080805050

25122512

5

5S2000S2000AS2000AFS2000FS2055S2055AS2055AFS2055F

S2000N;S2000N;S2000N;S2000N;S2055N;S2055N;S2055N;S2055N;

Package TypeVCE(sat) (V)

Package TypeVCE(sat) (V)

Super-sededProducts

Discon-tinuedProducts

FinalPhaseProducts

Built-indamperdiode

Super-sededProducts

Discon-tinuedProducts

FinalPhaseProducts

Built-indamperdiode

17

Electrical characteristics and packages are same.Electrical characteristics have are high grade.Electrical characteristics are low grade.Package (allowable power disspation) are high grade.Package (allowable power disspation) are low grade.Damper diode is built-in or not.

123456

( * ) Notes: : 1st generation : 2nd generation (final-phase or discontinued products) : 3rd generation (old design) : 4th generation (new design)

*

*

Page 17: Horizontal Deflection Transistors

18 19

18 18

**IC(sat)

PC max

VCBO = $900V, *1400V,1500 V VCBO = 1700 V VCBO = 2000 VPackage

2SD15532SD20892SC37152SC37162SD15542SD25992SD20952SD25862SC47642SD15552SD2499

S2055AFS2055FS2055N2SC47622SC49162SC51492SC53392SD15562SD21252SD2539

2SC47632SC52802SD23482SD2559

2SC45312SC2349

TO-3P(H)IS TO-3 TO-3P(BS) TO-3P(H)IS TO-3P(LH) TO-3P(LH)

Table of Replacement

(8V)

(8V)

(5V)

(5V)

(5V)

(5V)

(1V)

(5V)

(5V)

(5V)

(5V)

(3V)

(5V)

(5V)

(5V)

(3V)

(3V)

(5V)

(3V)

(5V)

(5V)

(3V)

(5V)

(3V)

(3V)

(3V)

(3V)

(3V)

2SD1543

2SD1544

2SC3844A2SC48302SD15452SD2498S2000AFS2000FS2000N2SC3885A2SC47572SC51482SD1546

2SC3886A2SC47582SC51292SC53862SD15472SD25002SC45422SC47592SC54042SD15482SC50482SC5387

2SC5411*(S3D20)

2SC5587

2SC5717

(8V)

(8V)

(5V)

(5V)

2SD868

2SD869

2SD870

2SD871

(8V)

(10V)

(8V)

(5V)

(5V)

(5V)

(5V)

2SD818

$2SD8112SD819

2SD820

2SD821

2SD822

*2SD1279

(8V)

(8V)

(5V)

(5V)

(1V)

(5V)

(5V)

(5V)

(5V)

(5V)

2SD1425

2SD1426

2SD1427

S2055S2055A

*2SC38922SC3892A2SD1429

*2SC38932SC3893A

(8V)

(8V)

(5V)

(5V)

(5V)

(5V)

(1V)

(5V)

(5V)

(5V)

(5V)

(5V)

(5V)

(5V)

2SD1429

2SD1430

*2SC38872SC3887A2SD1431

S2000S2000A

*2SC38882SC3888A2SD1432

*2SC38892SC3889A2SD1433

2SC4560

(5V)

(5V)

(5V)

(5V)

(5V)

(5V)

(3V)

(5V)

(5V)

(5V)

(5V)

2SD2550

2SC4765

2SD2551

2SC4766

2SD2253

2SD26382SC51432SC57162SD24282SD24542SD2553

(5V)

(5V)

(3V)

(5V)

(3V)

2SC4806

2SC4761

2SC5150

2SC4532

2SC5588

(5V)

(3V)

(3V)

(3V)

(3V)

(3V)

2SC4608

2SC5332

2SC5422

2SC5590

2SC5446

2SC5570*(S3D21)

(5V)2SC4760

*(2SC5748)

(5V)

(5V)

(3V)

(5V)

(5V)

(5V)

(5V)

(3V)

(3V)

(3V)

(3V)

2SC5331*2SC42882SC4288A2SC5421

*2SC42892SC4289A*2SC42902SC4290A2SC51422SC55892SC54452SC5695

*(2SC5749)

(8V)

(1V)

(5V)

(5V)

(8V)

(8V)

(5V)

(5V)

(5V)

(5V)

(5V)

(1V)

(5V)

(5V)

(5V)

(5V)

(5V)

(5V)

(5V)

(5V)

(5V)

(5V)

(5V)

(5V)

(5V)

(5V)

(5V)

2 A2.2 A2.5 A

3 A

3.5 A

4 A

4.5 A

5 A

5.5 A6 A

7 A

8 A

9 A10 A

11 A

12 A

14 A

15 A17 A

22 A

**IC(sat)

PC max

Package

2 A2.2 A2.5 A3 A

3.5 A

4 A

4.5 A

5 A

5.5 A6 A

7 A

8 A

9 A10 A

11 A

12 A

14 A

15 A17 A

22 A

50 W 80 W

TO-3P(LH)

Built-indamper diode

Built-indamper diode

Built-indamper diode

Built-indampe dioder

Built-indamper diode

No built-indamper diode

No built-indamper diode

No built-indamper diode

No built-indamper diode

No built-indamper diode

No built-indamper diode

No built-indamper diode

40 W to 75 W 40 W to 75 W180 W to 220 W 180 W to 220 W 180 W to 220 W

Notes: **: IC (sat) is value of IC for VCE (sat).: Superseded, final-phase or discontinued products: 3rd generation (old design): 4th generation (new design)

: 5th generation (new design) : 5th generation (new design under development)*( )

(5V) means VCE (sat) = 5 V

2SC5612 (3V)

Page 18: Horizontal Deflection Transistors

©2001 TOSHIBA CORPORATIONPrinted in Japan

OVERSEAS SUBSIDIARIES AND AFFILIATESToshiba AmericaElectronic Components, Inc.Headquarters-Irvine, CA9775 Toledo Way, Irvine, CA 92618, U.S.A.Tel: (949)455-2000 Fax: (949)859-3963

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Duluth, GA(Atlanta)3700 Crestwood Parkway, Ste. 460,Duluth, GA 30096, U.S.A.Tel: (770)931-3363 Fax: (770)931-7602

Edison, NJ2035 Lincoln Hwy. Ste. #3000, EdisonNJ 08817, U.S.A.Tel: (732)248-8070 Fax: (732)248-8030

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Richardson, TX(Dallas)777 East Campbell Rd., Suite 650, Richardson,TX 75081, U.S.A.Tel: (972)480-0470 Fax: (972)235-4114

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Penang OfficeSuite 13-1, 13th Floor, Menard Penang Garden,42-A, Jalan Sultan Ahmad Shah,100 50 Penang, MalaysiaTel: 4-226-8523 Fax: 4-226-8515

Toshiba Electronics Philippines, Inc.26th Floor, Citibank Tower, Valero Street, Makati,Manila, PhilippinesTel: (02)750-5510 Fax: (02)750-5511

Toshiba Electronics Asia, Ltd.Hong Kong Head OfficeLevel 11, Top Glory Insurance Building, Grand CenturyPlace, No.193, Prince Edward Road West,Mong Kok, Kowloon, Hong KongTel: 2375-6111 Fax: 2375-0969

Beijing OfficeRm 714, Beijing Fortune Building,No.5 Dong San Huan Bei-Lu, Chao Yang District,Beijing, 100004, ChinaTel: (010)6590-8795 Fax: (010)6590-8791

Chengdu OfficeUnit F, 18th Floor, New Times Plaza, 42 Wenwu Road, Xinhua Avenue, Chengdu, 610017, ChinaTel: (028)675-1773 Fax: (028)675-1065

Shenzhen OfficeRm 3010-3012, Office Tower Shun Hing Square,Di Wang Commercial Centre, 333 ShenNanEast Road, Shenzhen, 518008, ChinaTel: (0755)246-1582 Fax: (0755)246-1581

Toshiba Electronics Korea CorporationSeoul Head Office14/F, KEC B/D, 257-7 Yangjae-Dong,Seocho-ku, Seoul, KoreaTel: (02)589-4334 Fax: (02)589-4302

Gumi Office6/F, Ssangyong Investment Securities B/D,56 Songjung-Dong, Gumi CityKyeongbuk, KoreaTel: (82)54-456-7613 Fax: (82)54-456-7617

Toshiba Technology Development(Shanghai) Co., Ltd.23F, Shanghai Senmao International Building, 101Yin Cheng East Road, Pudong New Area, Shanghai,200120, ChinaTel: (021)6841-0666 Fax: (021)6841-5002

Tsurong Xiamen Xiangyu TradingCo., Ltd.8N, Xiamen SEZ Bonded Goods Market Building,Xiamen, Fujian, 361006, ChinaTel: (0592)562-3798 Fax: (0592)562-3799

Toshiba Electronics TaiwanCorporationTaipei Head Office17F, Union Enterprise Plaza Bldg. 109Min Sheng East Rd., Section 3, 0446 Taipei,TaiwanTel: (02)514-9988 Fax: (02)514-7892

Kaohsiung Office16F-A, Chung-Cheng Bldg., Chung-Cheng 3Rd.,80027, Kaohsiung, TaiwanTel: (07)222-0826 Fax: (07)223-0046

The information contained herein is subject to change without notice.

The information contained herein is presented only as a guide for the applications of our products.No responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may resultfrom its use. No license is granted by implication or otherwise under any patent or patent rights of TOSHIBA or others.

TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices ingeneral can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is theresponsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design forthe entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss ofhuman life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are usedwithin specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mindthe precautions and conditions set forth in the "Handling Guide for Semiconductor Devices," or "TOSHIBA SemiconductorReliability Handbook" etc..

The Toshiba products listed in this document are intended for usage in general electronics applications (computer, personalequipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.).These Toshiba products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/orreliability or a malfunction or failure of which may cause loss of human life or bodily injury ("Unintended Usage"). Unintended Usageinclude atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments,combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of Toshiba products listedin this document shall be made at the customer’s own risk.

Website: http://doc.semicon.toshiba.co.jp/indexus.htm

Electronic Devices Sales & Marketing Division1-1, Shibaura 1-chome, Minato-ku, Tokyo, 105-8001, JapanTel: +81-3-3457-3405 Fax: +81-3-5444-9431

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