Holger Flemming, GSI, EE DVEE-Palaver, 15.11.2005 1 11th Workshop on Electronics for LHC and Future...
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Transcript of Holger Flemming, GSI, EE DVEE-Palaver, 15.11.2005 1 11th Workshop on Electronics for LHC and Future...
![Page 1: Holger Flemming, GSI, EE DVEE-Palaver, 15.11.2005 1 11th Workshop on Electronics for LHC and Future Experiments 12. - 16. 9. 2005, Heidelberg.](https://reader036.fdocuments.in/reader036/viewer/2022062622/55204d6849795902118be1a1/html5/thumbnails/1.jpg)
1
Holger Flemming, GSI, EE
DVEE-Palaver, 15.11.2005
11th Workshop on Electronics for LHC and Future Experiments
12. - 16. 9. 2005, Heidelberg
![Page 2: Holger Flemming, GSI, EE DVEE-Palaver, 15.11.2005 1 11th Workshop on Electronics for LHC and Future Experiments 12. - 16. 9. 2005, Heidelberg.](https://reader036.fdocuments.in/reader036/viewer/2022062622/55204d6849795902118be1a1/html5/thumbnails/2.jpg)
2Holger Flemming, GSI, EE
DVEE-Palaver, 15.11.2005
Themenschwerpunkte
•LHC Maschienenstatus•Mikroelektronik, Strahlenhärte•Triggersysteme der LHC-Experimente•Massenproduktion / Test der
Elektronikkomponenten•Pixeldetektoren•Spannungsversorgung
![Page 3: Holger Flemming, GSI, EE DVEE-Palaver, 15.11.2005 1 11th Workshop on Electronics for LHC and Future Experiments 12. - 16. 9. 2005, Heidelberg.](https://reader036.fdocuments.in/reader036/viewer/2022062622/55204d6849795902118be1a1/html5/thumbnails/3.jpg)
3Holger Flemming, GSI, EE
DVEE-Palaver, 15.11.2005
Schwerpunkt Mikroelektronik
•Migration zu 0,13 µm• AMS: MOS Transistor Modelling
• Massimo Manghisoni: Untersuchungen an 0,13 µm CMOS Strukturen
•Neue Chips• Hugo Furtado: Delay25
• Frederico Faccio: Strahlungstoleranter LD Spannungsregler
•Microtelectronic Workgroup Meeting
![Page 4: Holger Flemming, GSI, EE DVEE-Palaver, 15.11.2005 1 11th Workshop on Electronics for LHC and Future Experiments 12. - 16. 9. 2005, Heidelberg.](https://reader036.fdocuments.in/reader036/viewer/2022062622/55204d6849795902118be1a1/html5/thumbnails/4.jpg)
4Holger Flemming, GSI, EE
DVEE-Palaver, 15.11.2005
Ehrenfried Seebacher (AMS)
CMOS Transistor Modelling
•Für moderne CMOS-Prozesse werden immer genauere Transistormodelle erforderlich
•BSIM3 bis 0,18 µm State of the art•< 0,18 µm: Weitere Effekte spielen immer
größere Rolle•Gate channel Leakage•Short channel Effect
•Daher ab 0,13 µm CMOS BSIM4
![Page 5: Holger Flemming, GSI, EE DVEE-Palaver, 15.11.2005 1 11th Workshop on Electronics for LHC and Future Experiments 12. - 16. 9. 2005, Heidelberg.](https://reader036.fdocuments.in/reader036/viewer/2022062622/55204d6849795902118be1a1/html5/thumbnails/5.jpg)
5Holger Flemming, GSI, EE
DVEE-Palaver, 15.11.2005
Massimo Manghisoni (CERN)
0.13 um CMOS technologies for analog front-end
circuits in LHC detector upgrades
•Untersuchung am 0,13 µm CMOS Prozess von STMicroelectronics
•Besonderes Gewicht auf Rauscheigenschaften und Strahlungseffekte
![Page 6: Holger Flemming, GSI, EE DVEE-Palaver, 15.11.2005 1 11th Workshop on Electronics for LHC and Future Experiments 12. - 16. 9. 2005, Heidelberg.](https://reader036.fdocuments.in/reader036/viewer/2022062622/55204d6849795902118be1a1/html5/thumbnails/6.jpg)
6Holger Flemming, GSI, EE
DVEE-Palaver, 15.11.2005
Massimo Manghisoni (CERN)
0.13 um CMOS technologies for analog front-end circuits in LHC detector upgrades
![Page 7: Holger Flemming, GSI, EE DVEE-Palaver, 15.11.2005 1 11th Workshop on Electronics for LHC and Future Experiments 12. - 16. 9. 2005, Heidelberg.](https://reader036.fdocuments.in/reader036/viewer/2022062622/55204d6849795902118be1a1/html5/thumbnails/7.jpg)
7Holger Flemming, GSI, EE
DVEE-Palaver, 15.11.2005
ü Characteristics unaffected for VGS ³ VT (very small threshold voltage shift)
ü Radiation-induced changes are apparent in the constant leakage current zone for both devices
ü increase in the subthreshold region in NMOS (edge effects due to radiation-induced charge at the STI oxide). Effect larger in devices with a shorter channel
Massimo Manghisoni (CERN)
0.13 um CMOS technologies for analog front-end circuits in LHC detector upgrades
![Page 8: Holger Flemming, GSI, EE DVEE-Palaver, 15.11.2005 1 11th Workshop on Electronics for LHC and Future Experiments 12. - 16. 9. 2005, Heidelberg.](https://reader036.fdocuments.in/reader036/viewer/2022062622/55204d6849795902118be1a1/html5/thumbnails/8.jpg)
8Holger Flemming, GSI, EE
DVEE-Palaver, 15.11.2005
Hugo Furtado (CERN)
Delay25
•Programmierbare, 4-Kanal-CMOS Delayline•Strahlungstolerant und Selbstkalibrierend•Clocksignal als Zeitreferenz•Zeitauflösung 0,5 ns
![Page 9: Holger Flemming, GSI, EE DVEE-Palaver, 15.11.2005 1 11th Workshop on Electronics for LHC and Future Experiments 12. - 16. 9. 2005, Heidelberg.](https://reader036.fdocuments.in/reader036/viewer/2022062622/55204d6849795902118be1a1/html5/thumbnails/9.jpg)
9Holger Flemming, GSI, EE
DVEE-Palaver, 15.11.2005
Hugo Furtado (CERN)
Delay25
DLL zur Selbstkalibration
Kan
äle
1 -
4
![Page 10: Holger Flemming, GSI, EE DVEE-Palaver, 15.11.2005 1 11th Workshop on Electronics for LHC and Future Experiments 12. - 16. 9. 2005, Heidelberg.](https://reader036.fdocuments.in/reader036/viewer/2022062622/55204d6849795902118be1a1/html5/thumbnails/10.jpg)
10Holger Flemming, GSI, EE
DVEE-Palaver, 15.11.2005
Frederico Faccio (CERN)
A radiation-tolerant LDO voltage regulator for HEP
applications
•Motivation• Power distribution in LHC experiments is a real challenge• Need for voltage regulation close to the electronics to be powered:
linear regulators are often used• To limit (useless) power dissipation, LDO regulators are desired,
having drop-out voltages as low as 100-150mV• Rad-hard regulators with these characteristics are prohibitively
expensive• A rad-hard LDO regulator with limited current capability (300mA) can
be developed as an ASIC using “our” quarter micron CMOS process at low cost!
![Page 11: Holger Flemming, GSI, EE DVEE-Palaver, 15.11.2005 1 11th Workshop on Electronics for LHC and Future Experiments 12. - 16. 9. 2005, Heidelberg.](https://reader036.fdocuments.in/reader036/viewer/2022062622/55204d6849795902118be1a1/html5/thumbnails/11.jpg)
11Holger Flemming, GSI, EE
DVEE-Palaver, 15.11.2005
Min Typ Max Comment
Output V (V) 2.5 Fixed in this version
Input V (V) 2.65 2.7 3.5
Output I (mA) 0 250 300
Dropout V (mV) 150 At 300mA current
Quiescent I (mA) 1
Over-V prot. (V) 3.5 Protects regulator itself
Over-I prot. (mA) 400 600 Switch to current regulation
Over-T prot. (oC) 150 170
Disable in/out yes Possible to disable, output flag
Frederico Faccio (CERN)
A radiation-tolerant LDO voltage regulator for HEP
applications
![Page 12: Holger Flemming, GSI, EE DVEE-Palaver, 15.11.2005 1 11th Workshop on Electronics for LHC and Future Experiments 12. - 16. 9. 2005, Heidelberg.](https://reader036.fdocuments.in/reader036/viewer/2022062622/55204d6849795902118be1a1/html5/thumbnails/12.jpg)
12Holger Flemming, GSI, EE
DVEE-Palaver, 15.11.2005
offOver-Vmonitor
Over-Tmonitor
Switchesfor disable
Over-Imonitor
Error amplifier
R1
R2
Bandgap
Vin Vout
Gnd
Disable in
Disable flag
Frederico Faccio (CERN)
A radiation-tolerant LDO voltage regulator for HEP
applications
![Page 13: Holger Flemming, GSI, EE DVEE-Palaver, 15.11.2005 1 11th Workshop on Electronics for LHC and Future Experiments 12. - 16. 9. 2005, Heidelberg.](https://reader036.fdocuments.in/reader036/viewer/2022062622/55204d6849795902118be1a1/html5/thumbnails/13.jpg)
13Holger Flemming, GSI, EE
DVEE-Palaver, 15.11.2005
Frederico Faccio (CERN)
A radiation-tolerant LDO voltage regulator for HEP
applications
![Page 14: Holger Flemming, GSI, EE DVEE-Palaver, 15.11.2005 1 11th Workshop on Electronics for LHC and Future Experiments 12. - 16. 9. 2005, Heidelberg.](https://reader036.fdocuments.in/reader036/viewer/2022062622/55204d6849795902118be1a1/html5/thumbnails/14.jpg)
14Holger Flemming, GSI, EE
DVEE-Palaver, 15.11.2005
Alesandro Marchioro (CERN)
Microelectronic Workgroup meeting
•CERN lässt Vertrag mit IBM über 0,25 µm CMOS ASIC Produktion auslaufen
•Derzeit werden 0,13 µm Prozesse von verschiedenen Herstellern evaluiert
•Es wird diskutiert, ob wieder eine Strahlenharte Digitalbibliothek erstellt wird
•Bündelung der Kräfte ?