HIT photovoltaic module HIT-240HDE4...
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HIT-240HDE4 HIT-235HDE4 HIT photovoltaic module The SANYO HIT ( Heterojunction with I ntrinsic T hin layer) solar cell is made of a thin mono crystalline silicon wafer surrounded by ultra-thin amorphous silicon layers. This product provides the industry‘s leading performance and value using state-of-the-art manufacturing techniques. Benefit in Terms of Performance The HIT cell and module have very high conversion efficiency in mass production. Model Cell Efficiency Module Efficiency HIT-240HDE4 20.0% 17.3% HIT-235HDE4 19.6% 17.0% High performance at high temperatures Even at high temperatures, the HIT solar cell can maintain higher efficiency than a conventional crystalline silicon solar cell. Environmentally-Friendly Solar Cell More Clean Energy HIT can generate more clean Energy than other conventional crystalline solar cells. A module that uses silicon resources effectively High power, round shape cell (Silicon raw material) area: 216 cm 2 16.6 cm HIT ® -HD existing-HIT ® 12.5 cm 12.5 cm The newly developed “Honeycomb Design” HD cell allows the maximum number of round-type, high-power cells to be arrayed in a single module. HIT ® Solar Cell Structure Development of HIT solar cell was supported in part by the New Energy and Industrial Technology Development Organization (NEDO). n Ultra-thin amorphous silicon layer Front-side electrode Rear-side electrode Thin mono crystalline silicon wafer Ultra-thin amorphous silicon layer normalized output power time [Changes in generated power daytime] Module temp. 75 °C approx. 10% up Kobe (Japan), 24. July 2007, faced to south, tilt angle 30°.
Transcript of HIT photovoltaic module HIT-240HDE4...
HIT-240HDE4HIT-235HDE4
HIT photovoltaic module
The SANYO HIT (Heterojunction with Intrinsic Thin layer) solar cell is made of a thin mono crystalline silicon wafer surrounded by ultra-thin amorphous silicon layers. This product provides the industry‘s leading performance and value using state-of-the-art manufacturing techniques.
Benefit in Terms of PerformanceThe HIT cell and module have very high conversion efficiency in mass production.
Model Cell Efficiency Module Efficiency
HIT-240HDE4 20.0% 17.3%
HIT-235HDE4 19.6% 17.0%
High performance at high temperaturesEven at high temperatures, the HIT solar cell can maintain higher efficiency than a conventional crystalline silicon solar cell.
Environmentally-Friendly Solar CellMore Clean EnergyHIT can generate more clean Energy than other conventional crystalline solar cells.
A module that uses silicon resources effectively
High power, round shape cell
(Silicon raw material)area: 216 cm2
16.6 cm
HIT®-HD
existing-HIT®12.5 cm
12
.5 c
m
The newly developed “Honeycomb Design” HD cell allows the maximum number of round-type, high-power cells to be arrayed in a single module.
HIT® Solar Cell Structure
Development of HIT solar cell was supported in part by the New Energy and Industrial Technology Development Organization (NEDO).
n
Ultra-thin amorphous silicon layer
Front-sideelectrode
Rear-sideelectrode
Thin mono crystalline silicon wafer
Ultra-thin amorphous silicon layer
norm
aliz
ed o
utpu
t pow
er
time
[Changes in generated power daytime]
Module temp. 75 °Capprox.10% up
Kobe (Japan), 24. July 2007,faced to south, tilt angle 30°.
Electrical and Mechanical CharacteristicsHIT-240HDE4, HIT-235HDE4
SANYO Component Europe GmbHSolar Division
Stahlgruberring 4 81829 Munich, GermanyTel.+49-(0)89-460095-0 Fax.+49-(0)89-460095-170http://www.sanyo-solar.euemail: [email protected]
Solar Division
http://www.sanyo.com/solaremail: [email protected] 1
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Due to our policy of continual improvement the products covered by this brochure may be changed without notice.
CAUTION! Please read the operating instructions carefully before using the products.
Please consult your local dealer for more information.
GuaranteeProduct: 5 yearsPower output: 10 years (90% of Pmin), 20 years (80% of Pmin)Full conditions are available on our website.
Models HIT-xxxHDE4
Electrical data 240 235
Maximum power (Pmax) [W] 240 235
Max. power voltage (Vpm) [V] 35.5 35.1
Max. power current (lpm) [A] 6.77 6.70
Open circuit voltage (Voc) [V] 43.6 43.4
Short circuit current (Isc) [A] 7.37 7.33
Warranted min. power (Pmin) [W] 228.0 223.3
Maximum over current rating [A] 15
Output power tolerance [%] +10/-5
Max. system voltage [Vdc] 1000
Temperature coeff. of Pmax [%/°C] -0.30
Temperature coeff. of Voc [V/°C] -0.109 -0.109
Temperature coeff. of Isc [mA/°C] 2.21 2.20
Note 1: Standard test conditions: Air mass 1.5, Irradiance = 1000 W/m2, Cell temperature = 25 °C.
Note 2: The values in the above table are nominal.
Dimensions and weight
label
junction box
Front side Backside
Weight: 16.5 kgUnit: mm
Reference data for model HIT-240HDE4
Certificates
Section A-A Section B-B
Dependence on irradiance
Dependence on temperature
Voltage [V]
Cur
rent
[A]
Cell temperature: 25°C
Voltage [V]
Cur
rent
[A]
IEC 61730 IEC 61215
ID : 0000022202
HIT-H250E01HIT-H250E01
NEW HIT® HD 250
Dependence on temperature
Dependence on irradiance
Dependence on temperature
Dependence on irradiance
EVEN HIGHER POWER GENERATION ON THE SAME MODULE SIZE AS BEFORE
Using the “Honeycomb" HIT® cells to increase the efficiency
• Technology to capture more sunlight at morning and evening, when sun is at low posit ion, by using anti-reflection glassHigher module efficiency up to 18,0% by the 250W modelUsing the highest - 20,8% efficiency HIT® cell by the 250W model
•
•
•
Short Circuit
current [A]
7,74 7,73
Max Power
Current [A]7,18 7,14
Technical data
245250
Max Power [W] 245250
Open circuit
voltage [V]
43,1 42,7
Max power
voltage [V]34,9 34,4
Efficiency 17,7%18,0%
Size 1610 861 35 x x mm
Reference data: HIT-H250E01
CERTIFICATES
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