High Voltage Power MOSFET Portfolio IXYS Corporation · High Voltage Power MOSFET Portfolio I....
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IXYS Corporation WWW.IXYS.COM High Voltage Power MOSFET Portfolio
Transcript of High Voltage Power MOSFET Portfolio IXYS Corporation · High Voltage Power MOSFET Portfolio I....
High Voltage Power MOSFET Portfolio
I. Polar™ Power MOSFETs I. 1200V (Standard & HiPerFET™)
II. Standard Power MOSFETs I. 1500V, 2500V, 3000V, 4500V, 4700V
III. High Voltage Packages I. TO-247-3L-HV II. TO-247PLUS-3L-HV III. TO-247-4L IV. i4-Pak (non-isolated)
FEATURES
Low on-resistance RDS(on) and gate charge Qg
Low thermal resistance RthJC
Fast intrinsic body diodes with very low QRM and trr (HiPerFET™)
Avalanche rated
Excellent dv/dt ruggedness
APPLICATIONS
Hard switching inverters
High voltage lighting
Industrial machinery
Medical equipment
Energy efficient. Reliable.
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I. Polar™ Power MOSFETs (standard & HiPerFET™) (1200V, 0.2A – 32A)
Part Number VDSS ID25 RDS(on) Ciss Qg trr RthJC PD Package
max. typ. typ. typ. max. Type
TC=25°C TJ=25°C
V A W pF nC ns °C/W W
IXTP02N120P 1200 0.2 75 104 4.7 1600 3.8 33 TO-220
IXTY02N120P 0.2 75 104 4.7 1600 3.8 33 TO-252
IXTP06N120P 0.6 34 236 13.3 900 3 42 TO-220
IXTA06N120P 0.6 34 236 13.3 900 3 42 TO-263
IXTA08N120P 0.8 25 333 14 900 2.5 50 TO-263
IXTP08N120P 0.8 25 333 14 900 2.5 50 TO-220
IXTP1N120P 1 20 445 17.6 900 2 63 TO-220
IXTA1N120P 1 20 445 17.6 900 2 63 TO-263
IXTY1N120P 1 20 445 17.6 900 2 63 TO-252
IXTY1R4N120P 1.4 13 666 24.8 900 1.45 86 TO-252
IXTP1R4N120P 1.4 13 666 24.8 900 1.45 86 TO-220
IXTA1R4N120P 1.4 13 666 24.8 900 1.45 86 TO-263
IXTA2R4N120P 2.4 7.5 1207 37 920 1 125 TO-263
IXTH2R4N120P 2.4 7.5 1207 37 920 1 125 TO-247
IXTP2R4N120P 2.4 7.5 1207 37 920 1 125 TO-220
IXTP3N120 3 4.5 1100 42 700 0.62 200 TO-220
IXTH3N120 3 4.5 1100 42 700 0.62 200 TO-247
IXTA3N120 3 4.5 1100 42 700 0.62 200 TO-263
IXTA3N120HV 3 4.5 1100 42 700 0.62 200 TO-263HV
IXTT6N120 6 2.4 1950 56 850 0.42 300 TO-268
IXTH6N120 6 2.4 1950 56 850 0.42 300 TO-247
1200V Polar™ Standard Power MOSFETs
Part Number VDSS ID25 RDS(on) Ciss Qg trr RthJC PD Package
max. typ. typ. typ. max. Type
TC=25°C TJ=25°C
V A W pF nC ns °C/W W IXFH6N120P 1200 6 2.75 2830 92 300 0.5 250 TO-247 IXFA6N120P 6 2.75 2830 92 300 0.5 250 TO-263 IXFP6N120P 6 2.75 2830 92 300 0.5 250 TO-220
IXFR16N120P 9 1.04 6900 120 300 0.54 230 ISOPLUS247™
IXFH12N120P 12 1.35 5400 103 300 0.23 543 TO-247
IXFR20N120P 13 0.63 12900 193 300 0.43 290 ISOPLUS247™
IXFR26N120P 15 0.55 14000 225 300 0.39 320 ISOPLUS247™
IXFT16N120PHV 16 0.95 6900 120 300 0.19 660 TO-268HV
IXFH16N120P 16 0.95 6900 120 300 0.19 660 TO-247 IXFT16N120P 16 0.95 6900 120 300 0.19 660 TO-268
IXFL30N120P 18 0.38 19000 310 300 0.35 357 ISOPLUS i5-Pak™
IXFX20N120P 20 0.57 11100 193 300 0.16 780 PLUS247
IXFN20N120P 20 0.57 11100 193 300 0.21 595 SOT-227
IXFK20N120P 20 0.57 11100 193 300 0.16 780 TO-264
IXFN26N120P 23 0.5 14000 255 300 0.18 695 SOT-227
IXFL32N120P 24 0.34 21000 360 300 0.24 520 ISOPLUS i5-Pak™
IXFK26N120P 26 0.5 14000 255 300 0.13 960 TO-264
IXFX26N120P 26 0.5 14000 255 300 0.13 960 PLUS247 IXFB30N120P 30 0.35 22500 310 300 0.1 1250 PLUS264
IXFN30N120P 30 0.35 19000 310 300 0.14 890 SOT-227
IXFN32N120P 32 0.31 21000 360 300 0.125 1000 SOT-227
1200V Polar™ HiPerFET™ Power MOSFETs
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II. Standard Power MOSFETs (1500V-4700V)
FEATURES
High blocking voltage
Proprietary high-voltage packages
Up to 4500V electrical isolation (DCB)
UL 94 V-0 Flammability qualified (molding expoxies)
APPLICATIONS
Capacitor discharge circuits
Pulse circuits
Laser and X-ray generation systems
AC switches
Energy tapping applications from the power grid
Voltages: 1500V, 2500V, 3000V, 4500V, 4700V Current ratings: 1.83A – 20A
Part Number VDSS ID25 RDS(on) Ciss Qg trr RthJC PD Package
max. typ. typ. typ. max. Type
TC=25°C TJ=25°C
V A W pF nC ns °C/W W
IXTQ3N150M 1500 1.83 7.3 1375 38.6 900 1.7 73 TO-3P (overmolded)
IXTH2N150 2 9.2 830 28 377 0.73 170 TO-247
IXTJ3N150 2.3 8 1375 38.6 900 1.13 110 ISO TO-247™
IXTJ4N150 2.5 6 1576 44.5 900 1.13 110 ISO TO-247™
IXTA3N150HV 3 7.3 1375 38.6 900 0.5 250 TO-263
IXTH3N150 3 7.3 1375 38.6 900 0.5 250 TO-247
IXTJ6N150 3 3.85 2230 67 1500 1 125 ISO TO-247™
IXTT4N150HV 4 6 1576 44.5 900 0.45 280 TO-268HV
IXTA4N150HV 4 6 1576 44.5 900 0.45 280 TO-263
IXTH4N150 4 6 1576 44.5 900 0.45 280 TO-247
IXTH6N150 6 3.5 2230 67 1500 0.23 540 TO-247
IXTT6N150 6 3.5 2230 67 1500 0.23 540 TO-268
IXTH12N150 12 2.2 3720 106 1200 0.14 890 TO-247
IXTT12N150HV 12 2.2 3720 106 1200 0.14 890 TO-268HV
IXTT12N150 12 2.2 3720 106 1200 0.14 890 TO-268
IXTK20N150 20 1 7800 215 1100 0.1 1250 TO-264
IXTX20N150 20 1 7800 215 1100 0.1 1250 PLUS247
1500V Standard Power MOSFETs
Part Number VDSS ID25 RDS(on) Ciss Qg trr RthJC PD Package
max. typ. typ. typ. max. Type
TC=25°C TJ=25°C
V A W pF nC ns °C/W W
IXTA1N200P3HV 2000 1 40 646 23.5 2300 1 125 TO-263HV
IXTH1N200P3 1 40 646 23.5 2300 1 125 TO-247
IXTH1N200P3HV 1 40 646 23.5 2300 1 125 TO-247HV
IXTH3N200P3HV 3 5 1860 70 420 0.24 520 TO-247HV
IXTT3N200P3HV 3 8 1860 70 420 0.24 520 TO-268-HV
IXTF6N200P3 4 4.2 3700 143 520 0.58 215 ISOPLUS i4-Pak™
IXTX6N200P3HV 6 4 3700 143 520 0.13 960 TO-247PLUS-HV
IXTH06N220P3HV 2200 0.6 80 290 10.4 1100 1.2 104 TO-247HV
IXTH1R8N220P3HV 1.8 21.5 965 31 1300 0.64 194 TO-247HV
IXTA02N250HV 2500 0.2 450 116 7.4 1500 1.5 83 TO-263AB
IXTH02N250 0.2 450 116 7.4 1500 1.5 83 TO-247
IXTH05N250P3HV 0.5 110 303 10.5 1200 1.2 104 TO-247HV
IXTF1N250 1 40 1660 41 2500 1.13 110 ISOPLUS i4-Pak™
IXTH1R4N250P3 1.4 28 960 33 1800 0.64 195 TO-247 IXTH1N250 1.5 40 1660 41 2500 0.5 250 TO-247
IXTT1N250HV 1.5 40 1660 41 2500 0.5 250 TO-268HV
IXTK5N250 5 8.8 8560 200 1200 0.13 960 TO-264 IXTN5N250 5 8.8 8560 200 1200 0.18 700 SOT-227 IXTX5N250 5 8.8 8560 200 1200 0.13 960 PLUS247
2000V-2500V Standard Power MOSFETs
Part Number VDSS ID25 RDS(on) Ciss Qg trr RthJC PD Package
max. typ. typ. typ. max. Type
TC=25°C TJ=25°C
V A W pF nC ns °C/W W
IXTH04N300P3HV 3000 0.4 190 283 13 1100 1.2 104 TO-247HV
IXTH1N300P3HV 1 50 895 30.6 1800 0.64 195 TO-247HV
IXTT1N300P3HV 1 50 895 30.6 1800 0.64 195 TO-268HV
IXTF2N300PHV 1.6 21 1890 73 400 0.77 160 ISOPLUS i4-PaK™
IXTT2N300P3HV 2 21 1890 73 400 0.24 520 TO-268HV
IXTH2N300P3HV 2 21 1890 73 400 0.24 520 TO-247HV
IXTX4N300P3HV 4 12.5 3680 139 420 0.13 960 TO-247PLUS-HV
IXTH02N450HV 4500 0.2 625 246 10.6 1600 1.1 113 TO-247HV
IXTF02N450 0.2 625 246 10.6 1600 1.6 78 ISOPLUS i4-Pak™
IXTT02N450HV 0.2 625 246 10.6 1600 1.1 113 TO-268HV
IXTF1N450 0.9 80 1700 46 1750 0.77 165 ISOPLUS i4-Pak™
IXTH1N450HV 1 80 1700 46 1750 0.24 520 TO-247
IXTT1N450HV 1 80 1700 46 1750 0.24 520 TO-268HV
IXTX1R4N450HV 1.4 40 3300 88 660 0.13 960 TO-247PLUS-HV
IXTF1R4N450 1.4 40 3300 88 660 0.65 190 ISOPLUS i4-PAK™
IXTL2N450 2 20 6860 180 1750 0.56 220 ISOPLUS i5-Pak™
IXTL2N470 4700 2 20 6860 180 1750 0.56 220 ISOPLUS i5-Pak™
3000V-4700V Standard Power MOSFETs
Normenclature
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IX T H 02 N 450 HV
High voltage package
Voltage rating, 4500V
N-channel MOSFET
Current rating, 0.2A
Package type, TO-247
Standard MOSFET
IXYS
III. High Voltage Packages
Proprietary high-voltage versions of international standard size packages
TO-263HV
TO-268HV
TO-247-3L-HV TO-247PLUS-3L-HV TO-247-4L
i4-Pak (non-isolated)
BENEFITs: Elimination of multiple series-connected lower-voltage devices, simplifying and reducing gate drive circuitry Arc prevention Higher efficiency
APPLICATIONS:
High voltage power supplies
Defibrillators
Industrial instrumentation
CT and MRI scanners
X-ray machines
Ultrasound machines
Capacitor discharge applications
2 leads. 2 times greater creepage distance (4.20mm), compared to TO-263
TO-263HV
Creepage:
Lead to lead (surface): 4.20mm (min)
Lead to heatsink (surface): 4.50mm (min)
Clearance:
Lead to lead: 4.15mm (min)
Part Numbers: IXFA20N85XHV (MOSFET) IXYA20N120C3HV (IGBT) IXBA14N300HV (BiMOSFET™) “A” denotes TO-263 “HV” denotes high-voltage package
2 leads. 2 times greater creepage distance (9.50mm), compared to TO-268
TO-268HV
Creepage:
Lead to lead (surface): 9.50mm (min)
Lead to heatsink (surface): 5.40mm (min)
Clearance:
Lead to lead: 9.45mm (min)
Part Numbers: IXFT60N65X2HV (MOSFET) IXYT30N65C3H1HV (IGBT) IXBT42N300HV (BiMOSFET™) “T” denotes TO-268 “HV” denotes high-voltage package
TO-247-3L-HV
Creepage:
Lead to lead (surface): 8.91mm
Lead to heatsink (surface): 7.92mm
Clearance:
Lead to lead: 5.92mm
3 leads
Part Numbers: IXTH1N450HV (MOSFET) IXYH30N450HV (IGBT) IXBH22N300HV (BiMOSFET™) IXHH40N150HV (MGT) “H” denotes TO-247 “HV” denotes high-voltage package
TO-247PLUS-3L-HV
Creepage:
Lead to lead (surface): 8.91mm
Lead to heatsink (surface): 7.92mm
Clearance:
Lead to lead: 5.92mm
3 leads, for larger chips
Part Numbers: IXYX40N450HV (IGBT) IXBX50N360HV (BiMOSFET™) IXHX40N150V1HV (MGT) “X” denotes TO-247PLUS “HV” denotes high-voltage package
Advantages:
Dedicated pin for Kelvin connection to “source”
Separate paths for gate and source currents
Higher power switching efficiency
4 leads with Kelvin source connection
Source inductance excluded from gate driver circuit to achieve higher efficiency!
TO-247-4L
Creepage:
Lead to lead (surface): 3.63mm
Lead to heatsink (surface): 5.51mm
Clearance:
Lead to lead: 3.63mm
Pins 1(drain) and 5(bottom heatsink) are connected internally.
Part Numbers: IXFH60N65X2-4 (650V X2-Class MOSFET) IXFH80N65X2-4 (650V X2-Class MOSFET) “4” denotes 4-lead package
i4-Pak
Creepage:
Lead to lead (surface): 8.46mm
Lead to heatsink (surface): 6.24mm
Non-isolated ISOPLUS i4-Pak Cost effective high-voltage package solution!
Clearance:
Lead to lead: 8.46mm
