High Performance Electronics Integration in Flexible …State-of-the-Art OTFT Low-Voltage Ring...

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www.americansemi.com High Performance Electronics Integration in Flexible Technology February 10, 2011

Transcript of High Performance Electronics Integration in Flexible …State-of-the-Art OTFT Low-Voltage Ring...

Page 1: High Performance Electronics Integration in Flexible …State-of-the-Art OTFT Low-Voltage Ring Oscillators Based on Polyelectrolyte-Gated Polymer Thin-Film Transistors, L. Herlogsson,

www.americansemi.com

High Performance Electronics Integration in Flexible Technology

February 10, 2011

Page 2: High Performance Electronics Integration in Flexible …State-of-the-Art OTFT Low-Voltage Ring Oscillators Based on Polyelectrolyte-Gated Polymer Thin-Film Transistors, L. Herlogsson,

©2011 American Semiconductor, Inc. All rights reserved.

AMERICANSEMICONDUCTOR

INC.2007 Supplier of the Year

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About American Semiconductor

Corporate Headquarters – Boise, ID Engineering – Design, Process, Modeling Operations/Fab Management Test & Characterization Cleanroom Sales, Marketing, Administration

Manufacturing – San Jose, CA; Austin, TX Fab/Process Engineering

Manufacturing – Specialty Process Modules

Privately HeldFounded November, 2001

Product Lines Design Services – Turnkey Design Solutions Custom Fabrication – Your Silicon Made. Simple. FleX™ - Silicon on Polymer

ITAR Compliant; Trusted Certification in Progress

DoME 45nm CMOS

This work is sponsored by the Air Force Research Laboratory (AFRL))

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©2011 American Semiconductor, Inc. All rights reserved. 3

FleX™Process Overview

SOI Substrate

CMOSPolymer

Carrier Substrate

CMOSPolymer

Carrier Substrate

Start with a CMOS wafer

Add polymer layer

Attach tocarrier substrate

Removeoriginal substrate

Removecarrier substrate

CMOSPolymer

SOI Substrate

CMOSPolymer

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4FleX is a substrate conversion process that delivers low cost, high performance CMOS in a flexible format.

FleX enables a new generation of durable, pliable ICs that greatly improves the ability to integrate CMOS functionality in flexible electronics.

FleX technology combined with Flexfet Advanced CMOS provides an Ultra Low Power solution that further benefits portable and battery powered applications.

FleX - Silicon on Polymer

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©2011 American Semiconductor, Inc. All rights reserved. 4

FleXMotivaton

Flexibility. For integration into flexible systems or conformal on mounting of non-flat surfaces.

Durability. No silicon substrate improves tolerance to both mechanical and thermal shock.

Size. Ultra thin form factor is useful in multi-chip packages and 3DIC.

Burghartz “Ultra-Thin Chips and Related Applications, A New Paradigm in Silicon Technology,” IEEE 2009

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©2011 American Semiconductor, Inc. All rights reserved.

FleX CMOS Test Setup

• Signatone manual wafer probe station• JD Instruments mixed-signal tester• Tektronix digital oscilloscope

• Flexfet™ SOI CMOS process Planar double gate transistors 3-level metal aluminum interconnect Tungsten contacts and local interconnect

• 101-stage inverter ring oscillators Independent Double-Gate (IDG) @ 0.5-1.8V Double-Gate (DG) Flexfet @ 0.3-0.6V

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Drain

Source

TopGate

BottomGate

Drain

Source

Gates

IDG Flexfet DG Flexfet

Page 6: High Performance Electronics Integration in Flexible …State-of-the-Art OTFT Low-Voltage Ring Oscillators Based on Polyelectrolyte-Gated Polymer Thin-Film Transistors, L. Herlogsson,

©2011 American Semiconductor, Inc. All rights reserved.

Video

FleX: First circuit test demonstration – Feb 2011

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Page 7: High Performance Electronics Integration in Flexible …State-of-the-Art OTFT Low-Voltage Ring Oscillators Based on Polyelectrolyte-Gated Polymer Thin-Film Transistors, L. Herlogsson,

©2011 American Semiconductor, Inc. All rights reserved.

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‐1 1 ‐0 1 0 9

Gate Delay (ps)

Flexfet on FleXTest Results

101-Stage Tunable Inverter Ring Oscillator Operating at 1.8V7

FleX CMOSSilicon on Polymer

Full ThicknessSOI CMOS Wafer

Min FreqMax Freq Nom Freq

ReducedParasitic Capacitance

Full Thickness Wafer-19% to +20%

Tuning range:FleX CMOS SOP-19% to +22%

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©2011 American Semiconductor, Inc. All rights reserved. Proprietary Information 8

Low Power Flexible ElectronicsState-of-the-Art OTFT

Low-Voltage Ring Oscillators Based on Polyelectrolyte-Gated Polymer Thin-Film Transistors, L. Herlogsson, et al, Advanced Materials, 2010, vol. 22, pp. 72-76

Organic Thin Film Transistors

Page 9: High Performance Electronics Integration in Flexible …State-of-the-Art OTFT Low-Voltage Ring Oscillators Based on Polyelectrolyte-Gated Polymer Thin-Film Transistors, L. Herlogsson,

©2011 American Semiconductor, Inc. All rights reserved.

1.0E‐12

1.0E‐11

1.0E‐10

1.0E‐09

1.0E‐08

1.0E‐07

1.0E‐06

1.0E‐05

1.0E‐04

1.0E‐03

1.0E‐02

1.0E‐01

1.0E+00

1.0E+01

0.1 1 10 100Supply Voltage (V)

Proprietary Information 9

Low Power Flexible Electronics FleX CMOS

Organic Thin Film Transistors

PEALD ZnO TFTsElectron Devices, Feb. 2010

FleX CMOSFeb. 2011

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©2011 American Semiconductor, Inc. All rights reserved. 10

FleXPotential Applications

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3-D IC IntegrationThin Multi-Chip Stacking

Burghartz “Ultra-Thin Chips and Related Applications, A New Paradigm in Silicon Technology,” IEEE 2009

Flexible Electronics

SmartConsumer Electronics

Flexible Displays

Picture from ASU Flexible Display CenterPicture from apple.com

Picture from memagazine.org

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Thank You

American Semiconductor, Inc.3100 South Vista Avenue, Suite 230

Boise, ID 83705Tel: 208.336.2773Fax: 208.336.2752

www.americansemi.com

© 2011 American Semiconductor, Inc. All rights reserved.American Semiconductor Inc., the American Semiconductor logo, Flexfet, FleX, and the Flexfet logo are trademarks of American Semiconductor, Inc. All other trademarks are the property of their respective owners.