HIE-ISOLDE Project Status Report Yacine KADI CERN HIE-ISOLDE Project.
High-lights of solid state physics at ISOLDE Instituto Tecnológico e Nuclear, Sacavém, Portugal...
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Transcript of High-lights of solid state physics at ISOLDE Instituto Tecnológico e Nuclear, Sacavém, Portugal...
High-lights of High-lights of solid state physics at ISOLDEsolid state physics at ISOLDE
Instituto Tecnológico e Nuclear, Sacavém, PortugalInstituto Tecnológico e Nuclear, Sacavém, Portugal
and Centro de Física Nuclear da Universidade de Lisboa, Portugaland Centro de Física Nuclear da Universidade de Lisboa, Portugal
Tracer diffusion: Ag in CdTeTracer diffusion: Ag in CdTe
Transition metal impurities in Si: FeTransition metal impurities in Si: Fe
Photoluminescence: nature of the “green band” in ZnOPhotoluminescence: nature of the “green band” in ZnO
Arsenic as an “anti-site” impurity in ZnOArsenic as an “anti-site” impurity in ZnO
O and F configurations in High-O and F configurations in High-TTcc Hg1201 Hg1201
Polaron dynamics in Colossal Magneto-Resistive manganitesPolaron dynamics in Colossal Magneto-Resistive manganites
Magnetic hyperfine fields of adatoms at surfaces: Cd on NiMagnetic hyperfine fields of adatoms at surfaces: Cd on Ni
Ulrich Wahl Ulrich Wahl
Use of radioactive isotopes in Solid State PhysicsUse of radioactive isotopes in Solid State Physics
- Detect nuclear radiation to quantify impurities:Detect nuclear radiation to quantify impurities: radiotracer diffusionradiotracer diffusion
- Decay particles transmit information with atomic resolution:Decay particles transmit information with atomic resolution: Emission Channeling (EC)Emission Channeling (EC) Perturbed Angular Correlation (PAC)Perturbed Angular Correlation (PAC) Mössbauer Spectroscopy (MS)Mössbauer Spectroscopy (MS) Beta Nuclear Magnetic Resonance (Beta Nuclear Magnetic Resonance (-NMR)-NMR)
- Identify spectroscopic signals via isotope half life:- Identify spectroscopic signals via isotope half life: Photoluminescence (PL)Photoluminescence (PL) Deep Level Transient Spectroscopy (DLTSDeep Level Transient Spectroscopy (DLTS Hall effectHall effect
At ISOLDE often several of these methods are used in At ISOLDE often several of these methods are used in combinationcombination
The “unusual” diffusion of The “unusual” diffusion of 111111AgAg in CdTe in CdTe
0 200 400 600 8001011
1012
1013
1014
0 200 400
1011
1012
1013
1014
Tdiff
= 800 K
tdiff
= 60 min
Cd pressure
depth (µm)
depth (µm)
con
cent
ratio
n (c
m3 )
Tdiff
= 570 K
tdiff
= 30 min
vacuum
““Normal” Normal” Gaussian Gaussian diffusion profilediffusion profile
Very unusual symmetrical Very unusual symmetrical diffusion profilediffusion profile
Why?Why?
H. Wolf H. Wolf et alet al, Phys. Rev. Lett 94 (2005) , Phys. Rev. Lett 94 (2005) 125901125901
Lattice location of Lattice location of 107107CdCd107m107mAg(40s)Ag(40s) and and 109109Cd Cd 109m109mAg(44s)Ag(44s) in CdTe in CdTe
Emission Channeling lattice Emission Channeling lattice location:location:
substitutional Agsubstitutional AgCdCd
low stability of Aglow stability of AgCdCd
EEaa = 0.92(4)eV = 0.92(4)eV
long-range diffusionlong-range diffusion
amount of Agamount of AgCdCd depends depends
on the Cd stoichiometryon the Cd stoichiometry
S.G. Jahn S.G. Jahn et alet al, J. Cryst. Growth 161 (1996) 172, J. Cryst. Growth 161 (1996) 172
CdTeAg
Agi + VCd AgCd Agi + CdS
AgCd + Cdi
Diffusion of Diffusion of 111111AgAg in CdTe in CdTe
0 200 400 600 8001011
1012
1013
1014
0 200 400
1011
1012
1013
1014
Tdiff
= 800 K
tdiff
= 60 min
Cd pressure
depth (µm)
depth (µm)
con
cent
ratio
n (c
m3 )
Tdiff
= 570 K
tdiff
= 30 min
vacuum
Symmetrical diffusion profileSymmetrical diffusion profile
H. Wolf H. Wolf et alet al, Phys. Rev. Lett 94 (2005) , Phys. Rev. Lett 94 (2005) 125901125901
depletion of Ag in depletion of Ag in surface regions due surface regions due to slow indiffusion to slow indiffusion of Cd of Cd [Ag[AgSS] ~ [V] ~ [VCdCd]]
CdTeAg
Agi + VCd AgCd Agi + CdS
AgCd + Cdi
Cdi + VCd CdS
Cd Cd
Identify + control Fe in Si below 1010 cm-3
International Technology Roadmap for SemiconductorsInternational Technology Roadmap for Semiconductors
Transition metal impurities in SiTransition metal impurities in Si
Fe, Ni, Co, Cu… fast interstitial diffusers Fe, Ni, Co, Cu… fast interstitial diffusers
deep centersdeep centers
interact with dopants and change the electrical interact with dopants and change the electrical properties of dopantsproperties of dopants
must be gettered away from active region of devices, must be gettered away from active region of devices, e.g. by trapping at e.g. by trapping at radiation damageradiation damage
investigate properties of Fe in Si by Emission investigate properties of Fe in Si by Emission Channeling (EC) and Mössbauer spectroscopy (MS)Channeling (EC) and Mössbauer spectroscopy (MS)
U. Wahl U. Wahl et alet al, Phys. Rev. B 72 (2005) , Phys. Rev. B 72 (2005) 014115014115
At least 3 different Fe lattice sitesAt least 3 different Fe lattice sites
Following release to interstitial state re-gettering occurs at a different Following release to interstitial state re-gettering occurs at a different gettering center on ideal substitutional sitesgettering center on ideal substitutional sites
Lattice site changes of implanted Lattice site changes of implanted 5959FeFe in Si in Si
RT as-implanted:RT as-implanted:
mainly displaced mainly displaced substitutional Fesubstitutional Fe
-2
-1
0
1
2-2 -1 0 1 2
experiment-2 -1 0 1 2
1.23 - 1.27 1.19 - 1.23 1.15 - 1.19 1.11 - 1.15 1.07 - 1.11 1.03 - 1.07 0.99 - 1.03 0.95 - 0.99
simulation best fit
<111>
-2
-1
0
1
2 1.18 - 1.21 1.15 - 1.18 1.12 - 1.15 1.09 - 1.12 1.05 - 1.09 1.02 - 1.05 0.99 - 1.02 0.96 - 0.99
<100>
-2
-1
0
1
2 1.10 - 1.12 1.08 - 1.10 1.06 - 1.08 1.05 - 1.06 1.03 - 1.05 1.01 - 1.03 0.99 - 1.01 0.97 - 0.99
<110>
[deg]-2 -1 0 1 2
-2
-1
0
1
2
-2 -1 0 1 2
<211> 1.15 - 1.18 1.12 - 1.15 1.10 - 1.12 1.07 - 1.10 1.04 - 1.07 1.01 - 1.04 0.99 - 1.01 0.96 - 0.99
experiment experiment simulationssimulations
annealedannealed at at TT=300°C:=300°C:
mainly tetrahedral mainly tetrahedral interstitial Feinterstitial Fe
-2
-1
0
1
-2 -1 0 1 2experiment
-2 -1 0 1 2
1.56 - 1.66 1.46 - 1.56 1.37 - 1.46 1.27 - 1.37 1.17 - 1.27 1.08 - 1.17 0.98 - 1.08 0.88 - 0.98
simulation best fit
<111>
-2
-1
0
1
2 1.41 - 1.48 1.34 - 1.41 1.27 - 1.34 1.21 - 1.27 1.14 - 1.21 1.07 - 1.14 1.00 - 1.07 0.93 - 1.00
<100>
-2
-1
0
1
2 1.10 - 1.13 1.08 - 1.10 1.05 - 1.08 1.02 - 1.05 0.99 - 1.02 0.97 - 0.99 0.94 - 0.97 0.91 - 0.94
<110>
[deg]-2 -1 0 1 2
-2
-1
0
1
2
-2 -1 0 1 2
<211> 1.14 - 1.18 1.11 - 1.14 1.07 - 1.11 1.04 - 1.07 1.00 - 1.04 0.97 - 1.00 0.94 - 0.97 0.90 - 0.94
experiment experiment simulationssimulations
-2
-1
0
1
2
-2 -1 0 1 2experiment
-2 -1 0 1 2
1.84 - 1.97 1.71 - 1.84 1.57 - 1.71 1.44 - 1.57 1.31 - 1.44 1.18 - 1.31 1.04 - 1.18 0.91 - 1.04
simulation best fit
<111>
-2
-1
0
1
2 1.53 - 1.62 1.45 - 1.53 1.36 - 1.45 1.27 - 1.36 1.18 - 1.27 1.10 - 1.18 1.01 - 1.10 0.92 - 1.01
<100>
-2
-1
0
1
2
1.47 - 1.55 1.40 - 1.47 1.32 - 1.40 1.25 - 1.32 1.17 - 1.25 1.10 - 1.17 1.02 - 1.10 0.95 - 1.02
<110>
[deg]-2 -1 0 1 2
-2
-1
0
1
2
-2 -1 0 1 2
<211> 1.35 - 1.41 1.29 - 1.35 1.24 - 1.29 1.18 - 1.24 1.12 - 1.18 1.06 - 1.12 1.01 - 1.06 0.95 - 1.01
annealed at annealed at TT=800°C:=800°C:
mainly ideal mainly ideal substitutional Fesubstitutional Fe
experiment experiment simulationssimulations
angular angular emission emission channeling channeling patternspatterns
Mössbauer effect from Mössbauer effect from 5757Mn Mn 5757FeFe in Si in Si
H.P. Gunnlaugsson et al, Appl. Phys. Lett. 80 (2002) 2657H.P. Gunnlaugsson et al, Appl. Phys. Lett. 80 (2002) 2657
4-5 different Fe centers identified4-5 different Fe centers identified
interstitial Fe seen by EC is probablyinterstitial Fe seen by EC is probably a (Fe a (Feii-V) complex-V) complex
MS line broadening reveals MS line broadening reveals difference in diffusion difference in diffusion coefficients of Fecoefficients of Feii
and Fe and Feii00
FeiV
FeiV
FeiV
wurtzite semiconductor with band gap of 3.4 eVwurtzite semiconductor with band gap of 3.4 eV
very similar to GaN but with superior optical propertiesvery similar to GaN but with superior optical properties
large single crystals availablelarge single crystals available
Major problemMajor problem
all undoped crystals are all undoped crystals are nn-type -type (vacancies, interstitials, other defects, impurities?)(vacancies, interstitials, other defects, impurities?)
pp-doping extremely difficult-doping extremely difficult
Zinc OxideZinc Oxide
Nichia Co., Japan
GaN blue laser
Why not yet in ZnO?
Puzzles of the “green band” in ZnOPuzzles of the “green band” in ZnO““Structured” green luminescence band in ZnOStructured” green luminescence band in ZnO
R. Dingle, Phys. Rev. Lett. 23 (1969) R. Dingle, Phys. Rev. Lett. 23 (1969) 579 579
Conflicting explanations for the “green band” in the literature:
• CuZn - impurities• Vacancies (e.g., VO, VZn)
diffusion diffusion
donor
acceptor
conduction band
valence band
exci
tatio
n
Photoluminescence
investigate properties of Cu in ZnO and nature of investigate properties of Cu in ZnO and nature of green band by emission channeling and PLgreen band by emission channeling and PL
Lattice location of Lattice location of 6767CuCu6767Zn in ZnOZn in ZnO
67Cu
61.9 h
67Zn
-
Implanted Cu occupies substitutional Zn sites:
CuZn
U. Wahl et al, Phys. Rev. B 69 (2004) 012102U. Wahl et al, Phys. Rev. B 69 (2004) 012102
-2
-1
0
1
2
-2 -1 0 1 2
(0110)
-2 -1 0 1 2
1.26 - 1.33 1.19 - 1.26 1.12 - 1.19 1.06 - 1.12 0.99 - 1.06 0.92 - 0.99 0.85 - 0.92 0.78 - 0.85
[0001]
-2
-1
0
1
2
(1011)
(1120)
1.57 - 1.68 1.47 - 1.57 1.37 - 1.47 1.26 - 1.37 1.15 - 1.26 1.05 - 1.15 0.95 - 1.05 0.84 - 0.95
[1102]
-2
-1
0
1
2(2021)
(1120)
1.50 - 1.59 1.40 - 1.50 1.31 - 1.40 1.22 - 1.31 1.12 - 1.22 1.03 - 1.12 0.93 - 1.03 0.84 - 0.93
[1101]
[deg]-2 -1 0 1 2
-2
-1
0
1
2
(0110)
(1120)
-2 -1 0 1 2
[2113] 1.38 - 1.46 1.31 - 1.38 1.23 - 1.31 1.15 - 1.23 1.07 - 1.15 1.00 - 1.07 0.92 - 1.00 0.84 - 0.92
Experiment Simulation for CuZn
ISOLDE / CERN:• 21013 cm2 at 60 keV• 200°C, 10 min, vacuum
PL-Signals of PL-Signals of 6464CuCu((6464Ni,Ni,6464Zn) in ZnOZn) in ZnO
ISOLDE / CERN:• 51012 cm2 at 60 keV• 800°C, 30 min, O2
0 20 40 60
2,2 2,4 2,6 2,8 3,0 3,2 3,4
3 h
12 h
72 h
Energy [eV]
t1/2 = 12.1(1) h
Inte
nsi
ty [a
.u.]
Inte
nsity
[a.
u.]
Time t [h]
64Cu
64Ni
12.7 h
64Zn
EC61%
-
39%
Green band
ZnO: Green band
Literature
- CuZn - impurities
- Vacancies
- Ni - impurities ?
T. Agne et al, submitted to Phys. Rev. T. Agne et al, submitted to Phys. Rev. Lett. Lett.
ZnO: Green band
Literature
- Cu - impurities
- Vacancies
- Ni - impurities ?
t1/2 = 2.6(2) h
1,0 h
3,6 h
12 h
Inte
nsity
[a.
u.]
Time t [h]In
ten
sity
[a.u
.]
Energy [eV]Green band
0 4 8 12
2,2 2,4 2,6 2,8 3,0 3,2 3,4
PL-Signals of PL-Signals of 6565NiNi6565CuCuin ZnOin ZnO
65Ni
2.52 h
65Cu
-
ISOLDE / CERN:• 51012 cm2 at 60 keV• 800°C, 30 min, O2
T. Agne et al, submitted to Phys. Rev. T. Agne et al, submitted to Phys. Rev. Lett. Lett.
Recoil energies of Recoil energies of 6464CuCu and and 6565NiNi
Recoil energy: EC - decay Erecoil = 23.5 eV
- decay Erecoil 37.7 - 55.7 eV
Displacement energy in ZnO *: Zn-atoms Edispl = 19 eVO-atoms Edispl = 41 - 57 eV
Both decays produce Zn vacancies:
Green band Zn vacancies in ZnO
* D. C. Look, J. W. Hemsky, Phys. Rev. Lett. 82, 2552 (1999)
64Cu
64Ni
12.7 h
64Zn
EC61%
-
39%65Ni
2.52 h
65Cu
-
T. Agne et al, submitted to Phys. Rev. T. Agne et al, submitted to Phys. Rev. Lett. Lett.
The difficulties in The difficulties in pp-type doping of ZnO-type doping of ZnO
Candidates for acceptors:Candidates for acceptors:N, P, N, P, AsAs, , SbSb Group V on SGroup V on SOO
LiLi, , NaNa, , KK,, Rb Rb Group Ia on SGroup Ia on SZnZn
CuCu, , AgAg Group Ib on SGroup Ib on SZnZn
already studied at ISOLDEalready studied at ISOLDE
investigations foreseeninvestigations foreseen
Maybe, but it does not like to occupy O Maybe, but it does not like to occupy O sites but prefers Zn sites!sites but prefers Zn sites!
ExampleExample: :
Is As a suitable acceptor in ZnO?Is As a suitable acceptor in ZnO?
7373AsAs as an “anti-site” impurity in ZnO as an “anti-site” impurity in ZnO
-2
-1
0
1
2
-2 -1 0 1 2
(0110)
experiment
-2 -1 0 1 2
1.10 - 1.14 1.05 - 1.10 1.01 - 1.05 0.97 - 1.01 0.92 - 0.97 0.88 - 0.92 0.83 - 0.88 0.79 - 0.83
simulation SZn sites
[0001]
-2
-1
0
1
2
(101
1)
(1120)
1.28 - 1.35 1.22 - 1.28 1.15 - 1.22 1.09 - 1.15 1.02 - 1.09 0.95 - 1.02 0.89 - 0.95 0.82 - 0.89
[1102]
-1
0
1
2
3
(2021)
(1120)
1.21 - 1.27 1.16 - 1.21 1.10 - 1.16 1.04 - 1.10 0.99 - 1.04 0.93 - 0.99 0.88 - 0.93 0.82 - 0.88
[1101]
[deg]-2 -1 0 1 2
-1
0
1
2
3
(0110)
(1120)
-2 -1 0 1 2
[2113] 1.27 - 1.34 1.21 - 1.27 1.14 - 1.21 1.08 - 1.14 1.01 - 1.08 0.94 - 1.01 0.88 - 0.94 0.81 - 0.88
-2 -1 0 1 2
simulations for SO sites
1.25 - 1.31 1.18 - 1.25 1.12 - 1.18 1.05 - 1.12 0.99 - 1.05 0.93 - 0.99 0.86 - 0.93 0.80 - 0.86
-2 -1 0 1 2
simulations for T sites
[1102]
1.15 - 1.21 1.10 - 1.15 1.05 - 1.10 0.99 - 1.05 0.94 - 0.99 0.88 - 0.94 0.83 - 0.88 0.77 - 0.83
1.23 - 1.29 1.17 - 1.23 1.12 - 1.17 1.06 - 1.12 1.00 - 1.06 0.95 - 1.00 0.89 - 0.95 0.83 - 0.89
1.15 - 1.20 1.10 - 1.15 1.05 - 1.10 1.00 - 1.05 0.96 - 1.00 0.91 - 0.96 0.86 - 0.91 0.81 - 0.86
[1101]
-2 -1 0 1 2
1.51 - 1.60 1.42 - 1.51 1.33 - 1.42 1.24 - 1.33 1.14 - 1.24 1.05 - 1.14 0.96 - 1.05 0.87 - 0.96
-2 -1 0 1 2
1.23 - 1.29 1.17 - 1.23 1.12 - 1.17 1.06 - 1.12 1.00 - 1.06 0.95 - 1.00 0.89 - 0.95 0.83 - 0.89
[2113]
[deg]
Only patterns for SOnly patterns for SZnZn fit the fit the
experimental results!experimental results!
U. Wahl U. Wahl et alet al, in print, Phys. Rev. Lett. (2005), in print, Phys. Rev. Lett. (2005)
High-High-TTcc superconductors superconductors
Superconductivity and its Superconductivity and its TTcc
critically influenced by the critically influenced by the charge that Ocharge that O22 doping doping introduces in the introduces in the superconducting CuOsuperconducting CuO22 planes planes
Twice the number of FTwice the number of F introduce introduce the same charge dopingthe same charge doping
investigate atomistic investigate atomistic configurations of Oconfigurations of O22 and F and F dopants by means of electrical dopants by means of electrical field gradient (EFG) it causes on field gradient (EFG) it causes on PAC probe atom PAC probe atom 199m199mHgHg
frequency
start stop
I Q
I
Ii
Q
1
IfIf
Q.Vzz
clock
time
Radioactive
ions PAC
Electric Field Gradient
dopant configuration fingerprint
HgBa2CuO4
+
Tc > 92K
O(2)
Cu O(1)
Ba
Hg
PAC
PAC
Experiment ~ 0.20
0 2500 5000 (Mrad/s)
0
50
100
~ 0.0
0
50
100
000 2500 5000
(Mrad/s)
0.34 (a)
EFG Simulations
J.G. Correia J.G. Correia et alet al, in press, Phys. Rev. B (2005), in press, Phys. Rev. B (2005)
Oxygen & Fluorine Configurations in Hg1201 (High-Oxygen & Fluorine Configurations in Hg1201 (High-TTcc))
In contrast to O, In contrast to O, F orders in small F orders in small atomistic stripesatomistic stripes
Local deformations Local deformations and atomistic stripes and atomistic stripes in the doping planes in the doping planes are are NOTNOT responsible responsible for for charge orderingcharge ordering at the CuOat the CuO22 planes planes
Colossal Magnetoresistive ManganitesColossal Magnetoresistive Manganites
Complex multi-scale world with:Complex multi-scale world with:
Intrinsic inhomogeneitiesIntrinsic inhomogeneitiesClusters and stripes (charge, spin and structure) Clusters and stripes (charge, spin and structure) Unconventional phase transitionsUnconventional phase transitions Charge-coupled lattice deformations: PolaronsCharge-coupled lattice deformations: Polarons
Strong coupling of Strong coupling of spinspin, , chargecharge, , orbitalorbital and and lattice degrees of freedomlattice degrees of freedom
use use 111m111mCd impurities as local observers of the nature Cd impurities as local observers of the nature of structural phase transitions by means of PACof structural phase transitions by means of PAC
200 400 600 8000
20
40
60
80
0,0
0,3
0,6
0,9
fd
fu
fC
Orth. phase(x-ray)
T (K)
%=0.12
u
=0.08
=0
d
Unconventional phase transitions as seen Unconventional phase transitions as seen by by 111m111mCdCd in LaMnO in LaMnO3.123.12
EFG dEFG d Strong Strong
Jahn-Teller Jahn-Teller DistortionDistortion
EFG uEFG u UndistortedUndistorted
Two main local Two main local 111m111mCdCdLaLa
environmentsenvironments
Free Free PercolationPercolation threshold: 31%threshold: 31%
A.M.L. Lopes et al, submitted to Phys. Rev. Lett. A.M.L. Lopes et al, submitted to Phys. Rev. Lett. Temperature [K]
111m
Cd
fra
ctio
n [
%]
EF
G a
sym
met
ry p
aram
eter
1,5 2,0 2,5
1,4
1,6
1,8
=0.42(2)
log(
f u-r u)
log(T-Ts)
critical critical exponent exponent =0.42(2) =0.42(2)
111m111mCdCd in in LaMnOLaMnO3.123.12 : polaron dynamics: polaron dynamics
Ea~0.31 eV
• Thermally activated Thermally activated polaron dynamicspolaron dynamics
• Hopping energy Hopping energy EEaa~0.31 ~0.31 eVeV
Dynamic JDynamic Jahn-ahn-TTellereller distortions related to polaron diffusion distortions related to polaron diffusion give rise to EFG fluctuations/attenuationgive rise to EFG fluctuations/attenuation
Fast fluctuations regime(observable region)
A.M.L. Lopes et al, submitted to Phys. Rev. Lett. A.M.L. Lopes et al, submitted to Phys. Rev. Lett.
4
111Cd Probe on Ni(001)
Subst. Terrace SiteNN = 8
Free Kink SiteNN = 6
Adatom siteNN = 4 Subst. Step Site
NN = 7
Free Step SiteNN = 5
Impurity Atoms at Various Siteson a Surface (001)
Magnetism on surfacesMagnetism on surfaces
Different adatom sites can be prepared via Different adatom sites can be prepared via deposition and anneal temperaturedeposition and anneal temperature
allows systematic studies of magnetic hyperfine fields allows systematic studies of magnetic hyperfine fields BBHFHF
at different sites by means of PACat different sites by means of PAC
7
MagneticHyperfine Fieldsat 111Cd on Ni Surfaces
Coordination Number
1968
PRL 88, 247201 (2002)Theory: Mavropoulos et al. PRL 81, 1506 (1998)
13 12 11 10 9 8 7 6 5 4 3 2 1
-10
-5
0
5
10
15
20
25
-|Bhf
| [T]
Ni(001) Ni(111) Ni(111) vicinal
Bhf ~ [Coord. No.]2
|Bhf
| [T]
Adatom
Bulk
Konstanz group:Ni(001):6,4;
Ni(111)
Ni(001)
K. Potzger et al, Phys. Rev. Lett. 88 (2002) 247201K. Potzger et al, Phys. Rev. Lett. 88 (2002) 247201BBHFHF parabolic function parabolic function
of coordination numberof coordination number
Semiconductors:Semiconductors:
Si, Ge, SiGe, diamond, Si, Ge, SiGe, diamond, III-V, nitrides, II-VI, ZnO…III-V, nitrides, II-VI, ZnO…
electrical doping, transition metals,electrical doping, transition metals,rare earths, H,rare earths, H,diluted magnetic semiconductorsdiluted magnetic semiconductors
High-High-TTcc superconductors and perovskites superconductors and perovskites
Magnetism (manganites, CMR)Magnetism (manganites, CMR)
Low dimensional systems: Low dimensional systems: surfaces, interfaces, multilayerssurfaces, interfaces, multilayers
Solid state physics at ISOLDE covers a wide range of Solid state physics at ISOLDE covers a wide range of materials:materials:
ISOLDE’s strength: ISOLDE’s strength: the variety of different experimental methods that can the variety of different experimental methods that can
be combined to study these materialsbe combined to study these materials
Thanks toThanks to
Thomas Agne, U LeipzigThomas Agne, U Leipzig
Vitor Amaral, U AveiroVitor Amaral, U Aveiro
João Pedro Araújo, U PortoJoão Pedro Araújo, U Porto
Joachim Bollmann, U DresdenJoachim Bollmann, U Dresden
João Guilherme Correia, ITN Lisbon + CERNJoão Guilherme Correia, ITN Lisbon + CERN
Manfred Deicher, U SaarbrückenManfred Deicher, U Saarbrücken
Haraldur Gunnlaugsson, U AarhusHaraldur Gunnlaugsson, U Aarhus
Karl Johnston, U Saarbrücken + CERNKarl Johnston, U Saarbrücken + CERN
Yuri Manzhur, HMI BerlinYuri Manzhur, HMI Berlin
Bart De Vries, IKS LeuvenBart De Vries, IKS Leuven
Gerd Weyer, U AarhusGerd Weyer, U Aarhus
Herbert Wolf, U SaarbrückenHerbert Wolf, U Saarbrücken
Wolf-Dietrich Zeitz, HMI BerlinWolf-Dietrich Zeitz, HMI Berlin
for providing slidesfor providing slides