Hardware Description and Design-In Proposals for SMD ...Hardware Description and Design-In Proposals...

V I S H AY S E M I C O N D U C T O R S

Optical Sensors Application Note

Hardware Description and Design-In Proposalsfor SMD Transmissive Sensors

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E Revision: 27-Jan-2021 1 Document Number: 84873

For technical questions, contact: [email protected] DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

By Reinhard Schaar

TCPT1300X01 (SINGLE), TCUT1300X01 (DUAL)• AEC-Q101 qualified• Transmissive sensor for automotive and industrial

applications• Gap dimension: 3 mm and aperture width: 0.3 mm

• Typical output current under test: IC = 0.6 mA at IF = 15 mA

• Emitter wavelength: 950 nm• Moisture sensitivity level 1 (MSL): unlimited floor life• Halogen-free




• Emitter wavelength: 950 nm• Moisture sensitivity level 1 (MSL): unlimited floor life• Halogen-free• Released for high operating temperatures up to 125 °C




• Emitter wavelength: 950 nm• Moisture sensitivity level 1 (MSL): unlimited floor life• Halogen-free• Taller dome, more vertical headroom

http://www.vishay.com


Application Notewww.vishay.com Vishay Semiconductors

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RELATIVE COLLECTOR CURRENT VS. HORIZONTAL DISPLACEMENT

Fig. 1

Pin connectiontop view

NC

A

Cath.

Coll.

E

NC

Gap (in mm): 3

Aperture (in mm): 0.3

0

0.2

0.4

0.6

0.8

1.0

-1.5 -1.0 -0.5 0 0.5 1.0 1.5

s - Horizontal Displacement (mm)

I C r

el -

Rel

ativ

e C

olle

ctor

Cur

rent

0.3 ± 0.05

1

1

B0.2

B

0.8

4

Relative Collector Current vs. Horizontal Displacement

s

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Fig. 2

With s = -0.5 mm, nearly all emitted IR light is also available at the detector side.


NC

A

Cath.

Coll.

E

NC


0

0.2

0.4

0.6

0.8

1.0

-1.5 -1.0 -0.5 0 0.5 1.0 1.5


I C r

el -

Rel

ativ

e C

olle

ctor

Cur

rent

0.3 ± 0.05

1

1

B0.2

B

0.8

4


s

4

Here (in mm): s = -0.5




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Fig. 3


NC

A

Cath.

Coll.

E

NC


0

0.2

0.4

0.6

0.8

1.0

-1.5 -1.0 -0.5 0 0.5 1.0 1.5


I C r

el -

Rel

ativ

e C

olle

ctor

Cur

rent

0.3 ± 0.05

1

1

B0.2

B

0.8

4


s

4

Here (in mm): s = 0.0

With s = 0 mm, nearly half of emitted IR light is blocked, but half of IR light is also available at the detector side.




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Fig. 4


NC

A

Cath.

Coll.

E

NC


0

0.2

0.4

0.6

0.8

1.0

-1.5 -1.0 -0.5 0 0.5 1.0 1.5


I C r

el -

Rel

ativ

e C

olle

ctor

Cur

rent

0.3 ± 0.05

1

1

B0.2

B

0.8

4


s

4

Here (in mm): s = +0.5

With s = +0.5 mm, nearly all emitted IR light is blocked and nearly nothing is available at the detector side.




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Transmissive Sensor: TCUT13.0X01

Fig. 5


NC

A

Cath.

Coll.

E

E

Gap (in mm): 3


0

0.2

0.4

0.6

0.8

1.0

-1.5 -1.0 -0.5 0 0.5 1.0 1.5


I C r

el -

Rel

ativ

e C

olle

ctor

Cur

rent


Distance between slots for detector 1 (D1) and detector 2 (D2) is 0.5 mm.

1

1

B

0.8

4

0.8 ± 0.05B0.2

0.3 ± 0.05

4

s




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Fig. 6


NC

A

Cath.

Coll.

E

E


0

0.2

0.4

0.6

0.8

1.0

-1.5 -1.0 -0.5 0 0.5 1.0 1.5


I C r

el -

Rel

ativ

e C

olle

ctor

Cur

rent


Here (in mm): s1 = -0.5

With s1 = -0.5 mm, nearly all emitted IR light is also available at both detector sides D1 and D2: UD1 = 1, UD2 = 1

1

1

B

0.8

4

0.8 ± 0.05B0.2

0.3 ± 0.05

4

s




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Fig. 7


NC

A

Cath.

Coll.

E

E


0

0.2

0.4

0.6

0.8

1.0

-1.5 -1.0 -0.5 0 0.5 1.0 1.5


I C r

el -

Rel

ativ

e C

olle

ctor

Cur

rent


Here (in mm): s1 = 0.0

With s1 = 0.0 mm, nearly half of emitted IR light is blocked (for D1), but half of IR light is also available at D1 and all IR light is available at D2.

1

1

B

0.8

4

0.8 ± 0.05B0.2

0.3 ± 0.05

4

s




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Fig. 8


NC

A

Cath.

Coll.

E

E


0

0.2

0.4

0.6

0.8

1.0

-1.5 -1.0 -0.5 0 0.5 1.0 1.5


I C r

el -

Rel

ativ

e C

olle

ctor

Cur

rent


Here (in mm): s1 = +0.5

With s1 = +0.5 mm, nearly all IR light is blocked (for D1), but all IR light still available at D2: UD1 = 0, UD2 = 1

1

1

B

0.8

4

0.8 ± 0.05B0.2

0.3 ± 0.05

4

s




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Fig. 9


NC

A

Cath.

Coll.

E

E


0

0.2

0.4

0.6

0.8

1.0

-1.5 -1.0 -0.5 0 0.5 1.0 1.5


I C r

el -

Rel

ativ

e C

olle

ctor

Cur

rent


Here (in mm): s2 = -0.5

With s2 = -0.5 mm, nearly all emitted IR light is available at D2.

1

1

B

0.8

4

0.8 ± 0.05B0.2

0.3 ± 0.05

s

4

Here (in mm): s1 = +0.5




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Fig. 10


NC

A

Cath.

Coll.

E

E


0

0.2

0.4

0.6

0.8

1.0

-1.5 -1.0 -0.5 0 0.5 1.0 1.5


I C r

el -

Rel

ativ

e C

olle

ctor

Cur

rent


Here (in mm): s2 = 0.0

With s2 = 0.0 mm, nearly half of emitted IR light is blocked for D2.

1

1

B

0.8

4

0.8 ± 0.05B0.2

0.3 ± 0.05

s

4




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Fig. 11


NC

A

Cath.

Coll.

E

E


0

0.2

0.4

0.6

0.8

1.0

-1.5 -1.0 -0.5 0 0.5 1.0 1.5


I C r

el -

Rel

ativ

e C

olle

ctor

Cur

rent


Here (in mm): s2 = +0.5

1

1

B

0.8

4

0.8 ± 0.05B0.2

0.3 ± 0.05

s

4

With s2 = +0.5 mm, nearly all emitted IR light is now also blocked for D2:UD1 = 0, UD2 = 0




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Fig. 12


NC

A

Cath.

Coll.

E

E


0

0.2

0.4

0.6

0.8

1.0

-1.5 -1.0 -0.5 0 0.5 1.0 1.5


I C r

el -

Rel

ativ

e C

olle

ctor

Cur

rent


Here (in mm): s2 = +1.0

1

1

B

0.8

4

0.8 ± 0.05B0.2

0.3 ± 0.05

s

4

With s2 = +1.0 mm, all emitted IR light is now also blocked for D2:UD1 = 0, UD2 = 0




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Fig. 13

With s = ± 0.5 mm for close to 100 % / 0 % of the collector current, just ± 0.35 mm is seen as added overlapping that needs to be added to that 1.1 mm total width. So, 1.1 mm + 2 x 0.35 mm = 1.8 mm for the total closing / opening.

0

0.2

0.4

0.6

0.8

1.0

-1.5 -1.0 -0.5 0 0.5 1.0 1.5


I C r

el -

Rel

ativ

e C

olle

ctor

Cur

rent


s

4

For s = 0.5 (in mm):0.5 - 0.15 = 0.35

0.8 ± 0.05

0.3 ± 0.05

0.15

1.1




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Fig. 14

With a 1.8 mm hole, 1.8 mm gaps / bars, and a constant shift of 0.9 mm, all four positions will be covered well.

With 64 holes and bars = 64 x 3.6 mm = 230.4 mm.

A code wheel diameter will have with this: d ≈ 73 mm.Smaller wheels are also possible, but the exact high and low level will not be reached.

With 0.6 mm holes, 0.5 mm bars, and with 64 holes and bars it could be just about 22 mm, and with just 16 position (16 x 1.1 mm/π) = 5.6 mm diameter.

0.8 mm

1.1 mm

1.8 mm

1 0

0 0

1 1

0 1




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DETERMINING THE FORWARD CURRENT FOR THE IRED AND THE LOAD RESISTOR FOR THE PHOTOTRANSISTOR First of all, one needs to also see the minimum specified and guaranteed values within basic characteristics of the datasheet:

The TCUT1300X01 and TCPT1300X01 show here 0.3 mA (with an IF = 15 mA), while the TCUT1350X01, TCPT1350X01, TCUT1600X01, and TCPT1600X01 show 0.7 mA:

TCUT1300X01, TCPT1300X01

Fig. 1 - Collector Current vs. Forward Current

TCUT1350X01, TCPT1350X01,TCUT1600X01, TCPT1600X01


BASIC CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified) TCUT1300X01, TCPT1300X01PARAMETER TEST CONDITION SYMBOL MIN. TYP. MAX. UNIT

COUPLER

Collector current VCE = 5 V, IF = 15 mA IC 0.3 0.6 - mA

BASIC CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified) TCUT1350X01, TCPT1350X01, TCUT1600X01, TCPT1600X01PARAMETER TEST CONDITION SYMBOL MIN. TYP. MAX. UNIT

COUPLER

Collector current VCE = 5 V, IF = 15 mA IC 0.7 1.6 - mA

0.001

0.01

0.1

1

10

0.1 1 10 100

IF - Forward Current (mA)

I C -

Col

lect

or C

urre

nt (

mA

)

VCE = 5 V

0.6

0.3

0.01

0.1

1

10

1 10 100


I C -

Col

lect

or C

urre

nt (m

A)

VCE = 5 V

1.6

0.7




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DETERMINING THE FORWARD CURRENT FOR THE IRED AND THE LOAD RESISTOR FOR THE PHOTOTRANSISTOR Beside these tolerances, one also needs to see the typical temperature behavior:


Fig. 3 - Collector Current vs. Ambient Temperature



The TCUT1300X01 and TCPT1300X01 show for -40 °C an IC of 0.45 mA. 0.65 mA is typical for 25 °C, so this value is about 30 % less. For specified minimum current it would then be just 0.3 mA - 30 % = 0.21 mA.

For the TCUT1350X01, TCPT1350X01, TCUT1600X01, and TCPT1600X01 this is different.

Here for -40 °C an IC of 1 mA is seen. 1.6 mA is typically seen for 25 °C, so this value is about 40 % less. Calculating here also with minimum specified data, it will lead to 0.7 mA - 40 % = 0.42 mA.

0.0

0.1

0.2

0.3

0.4

0.5

0.6

0.7

-40 -20 0 20 40 60 80 100

Tamb - Ambient Temperature (°C)

I C -

Col

lect

or C

urre

nt (

mA

)

IF = 15 mA

IF = 5 mA

VCE = 5 V

0.45

0.0

0.5

1.0

1.5

2.0

2.5

-50 -25 0 25 50 100 125 150


I C -

Col

lect

or C

urre

nt (

mA

)

75

IF = 15 mA

IF = 5 mA

VCE = 5 V




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DETERMINING THE FORWARD CURRENT FOR THE IRED AND THE LOAD RESISTOR FOR THE PHOTOTRANSISTOR The degradation of the IRED also needs to be seen. Dealing here with about 5 % will be sufficient for a normal operation profile over the whole lifetime of > 12 years.

A typical circuit will look like the example below. The resistor defining the forward current would then be: RE = (5 V - 1.2 V)/15 mA = 253 Ω. A bit lower normed value will be: 240 Ω.

Fig. 15

The load resistor value is now dependant on the wanted and needed output voltage. If it needs to deliver a high level to fulfill the input conditions of the following circuitry, e.g. UO ≥ 4.6 V, it would need to be quite high-ohmic.With having all tolerance in mind, one should just calculate with 0.2 mA (for the TCUT1300X01 and TCPT1300X01) and with 0.46 mA for the TCUT1350X01, TCPT1350X01, TCUT1600X01, and TCPT1600X01.

This leads to a load resistor value of: 4.6 V/0.2 mA = 23 kΩ, so, a RL ≥ 24 kΩ should be used for the TCUT1300X01 and TCPT1300X01 and 4.6 V/0.46 mA = 10 kΩ for the TCUT1350X01, TCPT1350X01, TCUT1600X01, and TCPT1600X01.

C

100 nF

5 V5 V

IF

UO

RL

RE240 Ω

IF = 15 mA

UF

UF = 1.2 V




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TIME-CRITICAL APPLICATIONS To suppress possible ambient distortions and also improve switching times, it is wise to choose the lowest possible resistor value.

An output voltage of even less than 1 V will be enough for either a following A/D input or a simple transistor stage.

So, RL could be about: RL = 1 V/ 0.2 mA = 5 kΩ (for the TCUT1300X01 and TCPT1300X01) and RL = 1 V/0.46 mA = 2.2 kΩ(for the TCUT1350X01, TCPT1350X01, TCUT1600X01, and TCPT1600X01)

Fig. 16

C

100 nF

5 V5 V

IFUO

RL

RE240 Ω

IF = 15 mA

UF

UF = 1.2 V




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TIME-CRITICAL APPLICATIONS The TCUT1300X01 and TCPT1300X01 show a typical rise / fall time of 20 μs / 30 μs:

The TCUT1350X01, TCPT1350X01, TCUT1600X01, and TCPT1600X01, as well as the TCUT1800X01 and TCUT1630X01 discussed later in this document, are specified with lower timings:

For all devices this is valid only with the test circuit shown, typical collector current, and at Tamb = 25 °C.

Fig. 5 - Test Circuit for tr and tf Fig. 6 - Rise / Fall Time vs. Collector Current

For higher load resistors = lower collector current, significantly higher timings will be seen, as also indicated within Fig. 22.

SWITCHING CHARACTERISTICSPARAMETER TEST CONDITION SYMBOL MIN. TYP. MAX. UNIT

Rise time IC = 0.3 mA, VCE = 5 V,RL = 100 Ω (see Fig. 6)tr - 20 150 μs

Fall time IC = 0.3 mA, VCE = 5 V,RL = 100 Ω (see Fig. 6)tf - 30 150 μs

SWITCHING CHARACTERISTICSPARAMETER TEST CONDITION SYMBOL MIN. TYP. MAX. UNIT

Rise time IC = 0.7 mA, VCE = 5 V,RL = 100 Ω (see Fig. 6)tr - 9 150 μs

Fall time IC = 0.7 mA, VCE = 5 V,RL = 100 Ω (see Fig. 6)tf - 16 150 μs

Channel I

Channel II

20688

+ 5 V

IC adjusted by IF

IF0

IF

RG = 50 Ωtp

tp = 1 ms

T= 20

Oscilloscope

50 Ω 100 Ω

R L ≥ 1 MΩ CL ≤ 20 pF

0

10

20

30

40

50

60

70

80

90

100

0 250 500 750 1000 1250 1500 1750 2000

IC - Collector Current (µA)

t r / t

f - R

ise

/ Fal

l Tim

e (µ

s)

tf

tr

20599

RL = 100 Ω




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TIME-CRITICAL APPLICATIONS For higher temperatures these timings will also increase. For a quite low load resistor of just 1 kΩ, specified typical values of 20 μs / 30 μs will also at 25 °C show already 27 μs / 43 μs, but for Tamb = 80 °C these may be as high as 38 μs (tr) and 65 μs (tf).

Fig. 7 - Rise / Fall Time vs. Ambient Temperature

With a load resistor of 22 kΩ the “ON” time will not increase that much, but the “OFF” time is ten times higher to about 270 μs, and this is already at Tamb = 25 °C. With 47 kΩ, again about a factor of three for fall time will be seen, so about 800 μs.For an operation temperature of 85 °C this will increase then to about 1 ms, and for lower collector currents either due to a device coming with a specified minimum value or operating with lower forward current, this may again be doubled.

0

10

20

30

40

80

-50 -40 -30 0 10 20 90


t r /

t r -

Ris

e /

Fall

Tim

e (μs)

50

60

70

-20 -10 807060504030

fall

rise

Comment:

average: 25 devices, 2 channel

collector current IC = 300 μAcollector-emitter voltage VCE = 5 Vload resistance per channel RL = 1 k�pulse condition tpulse = 1 ms, tpulse/Tperiod = 20




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OPERATING WITH LOW FORWARD CURRENTS Some applications may need to design the circuitry for the lowest-possible current consumption. All IR emitter diodes should work with a defined minimum forward current to deliver stable optical output. For the reflective sensors it should be ≥ 3 mA.For lower emitter currents the typical CTR may also be different and the provided graph (IC vs. IF) may show different behavior. So, it is not possible to assume that a parallel line within the IC vs. IF graph could show the correct collector current.





0.001

0.01

0.1

1

10

0.1 1 10 100


I C -

Col

lect

or C

urre

nt (

mA

)

0.6

0.3

Min.:300 µA atIF = 15 mA

Typ.:600 µA atIF = 15 mA

?

150.01

0.1

1

10

1 10 100


I C -

Col

lect

or C

urre

nt (m

A)

1.6

0.7

Min.:0.7 mA atIF = 15 mA

Typ.:1.6 mA atIF = 15 mA

?

15

VCE = 5 V




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AMBIENT LIGHT DISTURBANCES The sensors may also be used under critical light conditions. Some daylight or other light sources may be around and could affect the phototransistor, as this is not equipped with any filter. Due to the construction requirements, it is not possible to have a daylight filter added here.

A wide bandwidth will also allow for possible ambient light distortions.

The spectral bandwidth curve looks similar to the graph below (same phototransistor chip):

Fig. 10 - Relative Spectral Sensitivity vs. Wavelength

BASIC CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)PARAMETER TEST CONDITION SYMBOL MIN. TYP. MAX. UNIT

Wavelength of peak sensitivity λp - 825 - nmRange of spectral bandwidth λ0.1 - 440 to 1070 - nm

0

0.2

0.4

0.6

0.8

1.0

1.2

400 500 600 700 800 900 1000 1100

21555 � - Wavelength (nm)

S (�)

rel -

Rel

ativ

e S

pect

ral S

ensi

tivity




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AMBIENT LIGHT DISTURBANCES Light with wavelengths higher than 450 nm will disturb the TCxTs because of their wide spectral sensitivity shown in Fig. 30. Even green LEDs distributing light at about 520 nm. White LEDs show a wide wavelength range - besides a blue peak at about 450 nm - mainly from 520 nm to 630 nm.

The relative spectral sensitivity of the photodetectors used within the TCxTs will recognize this with about 10 % to 50 % of its max. sensitivity.

Fig. 11 - Relative Intensity vs. Wavelength (true green)

Fig. 17

Fig. 12 - Relative Intensity vs. Wavelength

Fig. 13 - Relative Spectral Sensitivity vs. Wavelength

0.0

0.2

0.4

0.6

0.8

1.0

1.2

460 500 540 580 620

� - Wavelength (nm)

I rel -

Rel

ativ

e In

tens

ity

true green


I rel -

Rel

ativ

e Lu

min

ous

Inte

nsity

0

0.2

0.4

0.6

0.8

1.0

1.2

400 450 500 550 600 650 700

0

0.2

0.4

0.6

0.8

1.0

1.2

400 500 600 700 800 900 1000 1100


S (�)

rel -

Rel

ativ

e S

pect

ral S

ensi

tivity




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AMBIENT LIGHT DISTURBANCES Very closely positioned red (or even white) LEDs could disturb the TCxTs detector, because all LEDs / IREDs send out light to all sides and there is no filter within the TCxTs.

Directing the LEDs straight to the TCxTs detector should be avoided.

Fig. 18

One possible improvement could be to turn the TCxTs around. That would avoid the possibility that the LEDs reach the photodetector(s) (D) directly.

Too wide slots of the code wheel for the TCxTs detector should be avoided.

An improvement could be to reduce the width of the openings / slots. That would avoid the possibility that the LEDs reach the photodetector(s) (D) directly.

Fig. 19

Also, a quite high forward current for the TCxTs emitter and a low load resistor value at the detector side would help to reduce sensitivity to stray light.

D D E




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TRANSMISSIVE SENSORS TCUT1630X01 AND TCUT1800X01In addition to the TCxT1300X01, the TCxT1350X01, and the TCxT1600X01 there are now also new devices: TCUT1630X01 and TCUT1800X01. These new ones offer one additional detector within TCUT1630X01 and even two additional detectors plus also one additional emitter within TCUT1800X01.

TCUT1630X01 (TRIPLE CHANNEL)• Package type: surface-mount

• Detector type: phototransistor

• Dimensions (L x W x H in mm): 5.7 x 5.9 x 7.1

• AEC-Q101 qualified

• Gap (in mm): 3

• Aperture (in mm): 0.3

• Typical output current under test: IC = 1.3 mA

• Emitter wavelength: 950 nm

• Lead (Pb)-free soldering released

• Moisture sensitivity level (MSL): 1

• Material categorization: For definitions of compliance please see www.vishay.com/doc?99912

TCUT1800X01 (QUAD CHANNEL)• Package type: surface-mount

• Detector type: phototransistor

• Dimensions (L x W x H in mm): 5.7 x 5.9 x 7.1

• AEC-Q101 qualified

• Gap (in mm): 3

• Aperture (in mm): 0.3

• Typical output current under test: IC = 1.3 mA

• Emitter wavelength: 950 nm

• Lead (Pb)-free soldering released

• Moisture sensitivity level (MSL): 1

• Material categorization: For definitions of compliance please see www.vishay.com/doc?99912




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These new devices come with one or two more detectors respectively and the TCUT1800X01 also with one additional emitter.

Fig. 14 - TCUT1630X01 Fig. 15 - TCUT1800X01

So for these new devices a bigger package footprint was needed. The new package dimensions are now (L x W x H in mm): 5.7 x 5.9 x 7.1

Fig. 16 - TCUT1630X01 Fig. 17 - TCUT1800X01

E1

Cathode

A

NC

E2

Collector

E3

NC

Cathode

A1

A2

E1

E2

Collector

E4

E3




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For these new devices, TCUT1630X01 and TCUT1800X01, the optical axes have also changed. All versions before have the emitter straight across from the detectors, so on the same optical axis:

Fig. 20

Now, for these new devices, TCUT1630X01 and TCUT1800X01, the optical axes are at an angle, due to the off axis position of the emitter with regard to the detector chips:

Fig. 21

0.9

4

0.8 ± 0.05

1

1

0.3 ± 0.05

B

0.2 B

0.9

1

5.7

5

4.5R0.3

Injection gatelocation

Optical axis

0.2 max.

1.2

3

5.5

Ø 0

.35

0.2 max.

0.9

5.9

1.2

1.5

2.5

2.5

0.3

1

2.5

0.7

00.4

2.5

0.4

2.5

5

3Optical axes emitter

7.1

± 0

.2

5.8

± 0

.2

0.9

5.9

1.5 1.50.6

75°

1.5

2

1.7

5

3

5.9

± 0

.2

Optical axesemitter 1

Optical axesemitter 2

7.1

± 0

.2

1.4

1.4

0.3

1.1

1.5

0.7

2.8

1.5

0.4 0.4




AP

PL

ICA

TIO

N N

OT




The smaller apertures and the fact that the emitters are no longer on the same optical axis as the detectors are the reasons that for both the TCUT1630X01 and the TCUT1800X01 the collector current is a bit lower, typical 1.3 mA instead of 1.6 mA:

The temperature behavior is almost identical to the TCxT1350X01 and TCxT1600X01, just the nominal collector current is different.


Also the timing behavior is almost identical to the TCxT1350X01 and TCxT1600X01, as shown before on pages 19 to 21.

The mentioned precautions against disturbances from ambient light shown on pages 23 to 25 should also be taken into consideration when designing with the TCUT1630X01 or TCUT1800X01.

ELECTRICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)PARAMETER TEST CONDITION SYMBOL MIN. TYP. MAX. UNIT

COUPLER

Collector current per channel VCE = 5 V, IF = 15 mA IC 0.45 1.3 - mA

0

0.4

0.8

1.2

1.6

2.0

-50 -25 0 25 50 75 100 125

I C-

Col

lect

or C

urre

nt (m

A)


IF = 15 mA

IF = 5 mA

VCE = 5 V




AP

PL

ICA

TIO

N N

OT




Also these “Displacement” figures look different because the arrangement of emitters and detectors are different.

Here for the TCUT1630X01:

Fig. 19 - Relative Collector Current vs. Horizontal DisplacementHorizontal Shutter (0.25 mm thickness)

Fig. 20 - Top View SensorChannel Positions and Origin of Horizontal Shutter

Fig. 22

0

0.1

0.2

0.3

0.4

0.5

0.6

0.7

0.8

0.9

1.0

-0.6 -0.3 0 0.3 0.6

I C,r

el-

Rel

ativ

e C

olle

ctor

Cur

rent

Sh - Horizontal Displacement (mm)

Ch1,E1

Ch2,E2

Ch3,E3

0.23 0.230Ch1 Ch3Ch2

0.15

Origin of Shshutter horizontal

Top viewchannel offset

Shutter

Recommended Footprint

1 0.7

0.7

3

6.8

5.7

Ejector marks

E1

Col.

E2

E3

Cath.

A1

n.c.

n.c.

n.c.

n.c.

Top view

0

1.15

2.15

1.15

2.15

1

0.7

0.7

0.7

R0.9 (4 x)

0.9

5.9

1.2

1.5

2.5

2.5

0.3

1

2.5

0.7

00.4

2.5

0.4

2.5

5

3Optical axes emitter

7.1

± 0

.2

5.8

± 0

.2

Note• Do not connect n.c. pins to the circuit

E1 E3

E2




AP

PL

ICA

TIO

N N

OT




And these “Displacement” figures are very different for the TCUT1800X01, because of the new arrangement of now two emitters and four detectors.

Fig. 21 - Relative Collector Current vs. Horizontal DisplacementHorizontal Shutter (0.25 mm thickness), tolerances ± 0.2 mm

Fig. 22 - Top View Sensor, Channel Positions andOrigin of Horizontal Shutter, tolerances ± 0.2 mm

0

0.1

0.2

0.3

0.4

0.5

0.6

0.7

0.8

0.9

1.0

-1.2 -0.9 -0.6 -0.3 0 0.3 0.6 0.9 1.2

I C,r

el-

Rel

ativ

e C

olle

ctor

Cur

rent


Ch1

Ch2

Ch3

Ch4

0.15


Shutter

Top-viewchannel offset

0.85

0.68

0.68

0.850

Ch2 Ch3Ch4Ch1




AP

PL

ICA

TIO

N N

OT




For this TCUT1800X01 the arrangement of the emitter and detector apertures need to be closely analyzed, such that the order of signal response when an object passes through the sensor is understood.

To aid this understanding, its best to look at the following cross sections showing the internal view of the emitter side, the side view of the component as a whole and the view of he detector side with the emitter apertures superimposed over the detector apertures:

Fig. 23

When this shutter (light blocking element) is shifted through the TCUT1800X01 horizontaly, channel 2 (E2) will first get opened and collector current for channel 2 will rise-up, then channel 1 just about 0.2 mm later. Channel 4 will need about additional 1.3 mm before current is flowing and channel 3 with same distance as before between channel 2 and 1.

One needs also to see the placement of the shutter within the gap.

Fig. 24

E1

E2E3

E4

0.15


Shutter

Top-viewchannel offset

0.85

0.68

0.68

0.850

Ch2 Ch3Ch4Ch1

E1

E2E3

E4

0

0.1

0.2

0.3

0.4

0.5

0.6

0.7

0.8

0.9

1.0

-1.2 -0.9 -0.6 -0.3 0 0.3 0.6 0.9 1.2

I C,r

el-

Rel

ativ

e C

olle

ctor

Cur

rent


Ch1

Ch2

Ch3

Ch4E1

E2

E3

E4




AP

PL

ICA

TIO

N N

OT




For vertical displacement Ch1 (E1) and Ch2 (E2) are driven by the upper emitter of the TCUT1800X01 and Ch3 (E3) plus Ch4 (E4) from the lower one.

Fig. 23 - Relative Collector Current vs. Vertical DisplacementVertical Shutter (0.25 mm thickness), tolerances ± 0.2 mm

Fig. 24 - Top View Sensor, Channel Positions andOrigin of Vertical Shutter, tolerances ± 0.2 mm

Fig. 25

0

0.1

0.2

0.3

0.4

0.5

0.6

0.7

0.8

0.9

1.0

1 1.5 2 2.5 3 3.5 4 4.5

SV - Vertical Displacement (mm)

Ch1 Ch2 Ch3 Ch4

I C,r

el-

Rel

ativ

e C

olle

ctor

Cur

rent

00.991.62

Ch1

0.3

Origin of Svshutter verticalShutter

}

0.7 0

0.2

2.723.33

Ch3}

3.834.47

Ch4}5.86

2.12Ch2}

01.111.75

1.822.44

3.073.67

3.754.39

E1 E2 E3 E4

0

0.1

0.2

0.3

0.4

0.5

0.6

0.7

0.8

0.9

1.0

1 1.5 2 2.5 3 3.5 4 4.5

SV - Vertical Displacement (mm)

Ch1 Ch2 Ch3 Ch4

I C,r

el-

Rel

ativ

e C

olle

ctor

Cur

rent

E1

E2E3

E4




AP

PL

ICA

TIO

N N

OT




The footprint for the TCUT1800X01 is identical to that the TCUT1600X01, just the added Channel 4 (E4) is now available where for the TCUT1630X01 “n.c.” is shown.

Fig. 26

5.7

Ejector marks

A1

Cath.

A2

E1

E2

Col.

E4

E3

n.c.

n.c.

Top-view

Recommended Footprint

1

1

0.7

0.7

0.7

3

6.8

0.7

0

1.15

2.15

1.15

2.15

R0.9 (4 x)

0.7

Note• Do not connect n.c. pins to the circuit




AP

PL

ICA

TIO

N N

OT




Possible circuitries for TCUT1630X01 and TCUT1800X01:

Fig. 27

For encoding and code wheel proposal please see also the dedicated application note.

For the TCUT1630X01: www.vishay.com/doc?84905

and for the TCUT1800X01: www.vishay.com/doc?84906

C

RE = (Us - UF)/15 mA = 253 �

Calculating with the min. collector current:RL = (Us - UVCEsat.)/1.3 mA = 4.6 V/1.3 mA = 3.5 k�

C

UO3

3.6 k�RL

IF = 15 mA

3.6 k�RL

UO2

UO1

3.6 k�RL

240 �RE

100 nF

IF

UF = 1.2 V

UF

UF = 1.2 V

UF

IF = 15 mA

IF

100 nF

160 �RE

UF = 1.2 V

UF

6.8 k�RL

6.8 k�RL

6.8 k�RL

6.8 k�RL

UO4

UO3

UO2

UO1

5 V

5 V

RE = (Us - 2 x UF)/15 mA = 173 �

RL = (Us - UVCEsat.)/0.7 mA = 4.6 V/0.7 mA = 6.6 k�

Hardware Description and Design-In Proposals for SMD ...Hardware Description and Design-In Proposals...

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Transcript of Hardware Description and Design-In Proposals for SMD ...Hardware Description and Design-In Proposals...