Grace Pakeltis TechCon Oral Presentation
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Transcript of Grace Pakeltis TechCon Oral Presentation
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Grace PakeltisUniversity of Illinois at Urbana-
Champaign
Transfer Printing of Thin-Film, Microscale III-V Lasers on Silicon
silicon
laser
silicon
laser
III-V on silicon
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direct growth lattice mismatch antiphase boundary
chip/wafer bonding bulk wafers/chips
printing thin-film III-V laser fabrication
after printing
M. E. Groenert, et al., J. Appl. Phys. 93, 362 (2001)
A. W. Fang, et al., Opt.. Exp. 14, 9203 (2006)
J. Justice, et al., Nat. Photonics 6, 610 (2012)
H. Yang, et al., Nat. Photonics 6, 615 (2012)
Transfer fully formed III-V lasers on Si
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Thin-film micro GaAs lasers AlInGaAs double quantum wells Fabry-Perot ridge waveguide Emitting at ~ 820 nm AlAs sacrificial layer undercut by HCl
Picked up by PDMS stamps
Thermally conductive interface
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Lasers printed on Si In-Ag bonding interface eutectic point ~ 150 C
top view cross sectional view
Thermal properties
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top viewthermal modeling (current 60 mA)
Lasing performance sensitive to device temperatures requires a heating sink
GaAs 55
SU-8 0.2
In 82
Thermal Conductivity (W/m/K)
Laser performance
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Lasers on different substrates electrical injection continuous wave operation at room temperature
Future work
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Integrate into Si based photonic circuits waveguides, modulators, photodetectors, etc
Materials and devices at telecomm bands (~ 1.55 µm) InGaAsP lasers grown on InP substrates
200 µmSiNx waveguides
with Intel Corp.
Acknowledgements
Thank you!9
Rogers group C. Robert and B. Corbett at Tyndall Institute, Ireland Ibrahim Ban at Intel Corp.