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Transcript of Getfile Plasma
Ludvik Martinu and Jolanta E. Klemberg-Sapieha
Functional Coating and Surface Engineering Laboratory – FCSEL-LaRFISEngineering Physics Department
Thin Film Research Center - GCMEcole Polytechnique, Montreal, Quebec, Canada
Plasma enhanced chemical vapor deposition: From laboratory to large scale production
5th Mikkeli International Industrial Coating Seminar – MIICS-5, Mikkeli, March 17, 2010
FCSEL
Acknowledgements
PhD students and post-docs – this work:
A. AmassianM. Azzi
E. BousserS. Guruvenket
S. HassaniP. Jedrzejowski
S. LaroucheR. Vernhes
Research associate:O. Zabieda
Recent publication: L. Martinu, O. Zabieda, J.E. Klemberg-Sapieha: “Plasma-Enhanced Chemical Vapor Deposition of Functional Coatings”, in the “Handbook on Thin Film Deposition Technologies”, P.M. Martin, ed., Elsevier, Amsterdam, 2009, pp. 394-467.
Functional Coating and Functional Coating and Surface Engineering Surface Engineering
Optical
PhotovoltaicsAutomobile Industry
Aerospace /Defense
VLSI
MEMS
Manufacturing
Telecom
Films
Biotechnology
Concept of Functional CoatingsConcept of Functional Coatings
1. Plasma-surface interactions and plasma systems
Film growth in the energetic plasma environment
2. Hard protective PECVD coatingsFrom tribological coatings for aerospace and automobile to biomedical applications
3. Optical and multifuntional coatings
From optical filters to smart windows, displays and solar cells
4. Conclusions and perspectives
Overview
Plasma-surface interactions
1. Ion bombardment effects: Energy per deposited particleEp ~ Ei . Φi / Φn
Ei < 1 keV, IEDF, Φi ion flux, Φn flux of condensing particles, SZM
Control of Ei and Φi / Φn :
- surface biasing- unbalanced magnetrons- gas phase ionization (plasma assistance)- ionization / biasing (PA-EBE, ECR, PECVD, MW/RF)- plasma pulsing (PMS, HIPIMS, p-PECVD)
2. UV and VUV radiation- strong radiation below 200 nm- crosslinking, surface volatilization
A
ADN m
NrΦ
ρ=
B.A. Movchan, A.V. Demchishin, 1969J.A. Thornton, 1974 R. Messier et al, 1984P.J. Kelly, R.D. Arnell, 1998 J. Musil, 1992A. Anders, 2009
Ion bombardment is essential to the optical and functional coatings industry
PVD techniques• Magnetron sputtering (MS), incl. HIPIMS• Ion-assisted deposition (IAD)• Plasma-assisted deposition (e.g. ion plating)
Ion bombardment in deposition processes
Dense films with smooth surfaces
Modified after: Martinu and PoitrasJVST A18 (2000) 2619
φi /φn
φi : ion fluxφn ∝ deposition rate
PVD( ) SiO2(Δ) dielectrics( ) metals( ) semiconductors
PECVD(A) Si3N4:H(B) SiO2:H(C) a-C:H(D) TiO2
Plasma-CVD techniques• PECVD, pulsed plasma – fp, DC• PICVD• pulse-bias PECVD
100 101 102 103 104 10510-4
10-3
10-2
10-1
100
101
I-1 - IBAD-1I-2 - IBAD-2M -MSD -DIBSP -PECVDF -FCAD
DI-2
F
MI-1
P
P
eV/particle
100
10
1No effect
No film
SiO2 Ta2O5
TiO2
Ion/
parti
cle
arriv
al ra
te ra
tio
Ion energy Ei [eV]
J.E. Klemberg-Sapieha et al., Appl. Opt., 2004
J.M.E. Harper et al., 1989
Plasma density, neElectron temperature, Te
Concentration of radicals, nRPlasma potential, Vp
Surface temperature, TSSurface potential, VS
Reaction productsSecondary electronsSputtered atoms
PhotonsRadicalsIons
Film properties
Reactor geometry
Pumping speed and gas flow
Excitation power and frequency
Substrate cooling or heating intensity
Optical
Electrical
Mechanical
Tribological
External parameters Internal parameters
Film composition
and microstructure
Reactors Plasma reactions Diagnostics
PECVD Materials Basic film propertiesFunctional
characteristics and applications
Plasma deposition processes and systems
RF
B: Downstream (remote) RF inductively coupled plasma reactor
Gas (O2, Ar, …)
RF coil
Precursor gas
Reactor configurations of low-, mid-and radio-frequency PECVD systems
A: Parallel plate plasma reactor
Antenna
M
Quartz windowMW power
Gas shower headMW applicator
Quartz window
Gas (O2, Ar, …)
MWpower
Precursor gas
MW power
Quartz jar
G: Electron cyclotron resonance (ECR)
RF
MW applicator
Quartz window
MW linearantenna array
M
I: Distributed antenna array combined with ECR (DECR)
Reactor configurations of microwave frequencyPECVD systems - different modes of excitation
C: Linear applicator D: Remote MW excitation
E: Horn antenna F: Plasma impulse CVD (PICVD)
H: Dual-mode MW/RF
M
RF
Ar
Precursor gas
HV DC HV
AC
Dielectric
M: Atmospheric pressure plasma
Reactor configurations using different modes of operation
J: Atomic layer deposition
(ALD) or CVD
K: Cascade arc L: Hybrid PECVD/PVD system combining parallelplate RF electrode and magnetron sputtering
104
105
106
107
(b)
(a)
N+
N2+
(d)
N+
104
105
106
107
N+
N2+
N2+
Rel
ativ
e In
tens
ity [c
ount
s / s
]
(e)
N+
N2+
0 5 10 15
104
105
106
107
(c)
N+
N2+
Ion Energy [eV]0 50 100 150 200 250 300
(f)
N2+
RF-powered electrodeGrounded electrode
Ion Energy [eV]
Ion energy distributions in nitrogen plasmas
Pulsed MW in C(PMW = 300 WfP = 1 kHzD = 0.5)
IEDFs of N2+ and N+ ions in HF plasmas in N2 (40 mTorr) in different configurations:
cw-RF/p-MW in H(VB = -150 V PMW = 300 WfP = 1 kHz, D = 0.5)
cw-RF in A(VB = 150V)
cw-MW in CPMW = 300W
cw-RF in A(VB = -150 V)
cw-RF/cw-MW in H(VB = -150 V, PMW = 300 W)
O. Zabeida et al., JAP 2000A. Hallil et al., JVST A 2000
-8 -6 -4 -2 0 2 4 6 80.00.10.20.30.40.50.60.70.80.91.0
Ti Ar Si N O
VB = -600 V,φi/φn ≈ 0.4 R = 0.5 nm/sEmax ≈ 690 eVEm ≈ 270 eV
MC simulation of ballistic transport:- Ions: N2
+, N+, and Ar+
- Neutrals: Ti and N
-8 -6 -4 -2 0 2 4 6 80.00.10.20.30.40.50.60.70.80.91.0
Si O
Depth (nm)
-8 -6 -4 -2 0 2 4 6 80.00.10.20.30.40.50.60.70.80.91.0
Ti Ar Si N O
Depth (nm)
2 nm TiN
5 nm TiN
Case study: Deposition of TiN on c-Si - TRIDYN
Bare substrate
Mol
ar fr
actio
nM
olar
frac
tion
Mol
ar fr
actio
n
A. Amassian et al., JVST A, 2006, JAP 2007
TiNTiSiN c-Si
10 nm
Substrate:c-Si(001)Native oxide < 2 nm
RF Pretreatment:ArVB = -600VP = 50 mtorr15 minutes
Deposit TiSiN/TiN:TiCl4 +N2 + Ar (+ SiH4)VB = -600 VP = 200 mtorrTs = 500oC
And HRTEM experimental evidence
1. Plasma-surface interactions and plasma systems
Film growth in the energetic plasma environment
2. Hard protective PECVD coatingsFrom tribological coatings for aerospace and automobile to biomedical applications
3. Optical and multifuntional coatings
From optical filters to smart windows, displays and solar cells
4. Conclusions and perspectives
Overview
PCHigh speed steel
TiAl6V4SiO2 glass
SiO2 quartzc-Si
SiO2
ITOTiO2
Si3N4
Ta2O5
Al2O3
TiNnc-TiN/SiN
c-BN
SiO2
Nb2O5
Ta2O5
TiO2
SiOxNy
SiN1.3
SiCSiCN
a-C:HTiN
nc-TiN/SiNnc-TiCN/SiCN
CNc-BN
c-BN/NCDNCDpc-D
0 20 40 60 80 100
Superhard
Material
Substrate
HardSoft
PECVD
PVD
Microhardness [GPa]
Microhardness of PECVD coatings
10
20
30
40
50 Young's m
odulus, Er , [G
Pa]
H
Har
dnes
s, H
, [G
Pa]
100
200
300
400nc-TiN/SiN1.3
Er
(a)
0 10 20 30 40 500
400
800
1200
Res
istiv
ity, ρ
, [μΩ
cm]
Concentration of Si, CSi [at. %]
ellipsometry 4 point
(b)
P. Jedrzejowski et al, APL 2006λe = 1–2 nm < particle size = 5–10 nm
TiN-based of nanocomposite films
Ralation between erosion rate and the H3/E2 ratio
H/E ratio (elastic strain to failure)
H3/E2 ratio (resistance to plastic
deformation)
•TiN-based films:and 50μm Al2O3particles at 84 m/s: enhanced erosion resistance is obtained for
• Coating thickness: > 8 μm
• Kc = 5-6 MPa.m1/2
• H3/E2 = 0.5-0.6 GPa
• H/E ≈ 0.15-0.2
0.0 0.2 0.4 0.6 0.8 1.00
4
8
12
16
H3/Er2 [GPa]
Volu
me
rem
oved
, W [1
0-10 x
cm3 ]
S. Hassani et al., Wear 2008
Spherical solid particle
Coating
Substrate
Spherical solid particle
Coating
Substrate
2.3 3.13 1.47 2.5p cW V r ρ E / (K H t )∝
Volume removedErosion rate=Mass of impacting particle
FE modeling:Eroded volume per particle
SS410 TiN nc-TiN/SiN0.00
0.02
0.04
0.06
0.08
Er
osio
n ra
te [m
g/g]
0.0 0.2 0.4 0.6 0.8
0.00
0.02
0.04
0.06
0.08
H3/E2 (GPa)
Mas
s lo
ss (m
g/g)
Erosion rate vs. H3/E2 : experiment
S. Guruvenket et al.,SCT 2009
Erosion conditions (ASTM G-76): Al2O3 particles, 50 μm dia., speed 84 m/s
TiN nc-TiN/a-SiN nc-TiCN/a-SiCN0
4
8
12
Wea
r coe
ffici
ent,
K [
10-6
mm
3 /Nm
]
673 K 773 K
Cf : 0.45
0.45
0.42
0.32 0.21
0.18
0.3 0.4 0.5 0.6 0.7 0.8 0.9
0
2
4
6
8
10
12
Wea
r coe
ffici
ent,
K x
[10-6
mm
3 /Nm
]
H3/Er2 [GPa]
Wear conditions (pin on disk): Alumina ball(6 mm dia), sliding speed 1.8 m/min, load 2 N
Open circuit potential measurements during and after the reciprocal sliding test of SS, SS/N3h/DLC, SS/a-SiNx:H, and SS/a-SiNx:H/DLC(Alumina ball, load: 9N, freq.: 1 Hz)
Tribo-corrosion of DLC-coated stainless steel in the Ringer’s solution
Cathodic polarization curves of bare SS and SS/N3h/DLC and SS/SiN/DLC coating systems
M. Azzi et al., Wear 2009
Industrial deposition system for the fabrication of DLC coatings for automotiveparts and other applications. Each chamber contains six 1.6 m long electrodes. (Courtesy of Hauzer Techno Coatings)
Multi-zone PECVD system
Example of a commercial system for the deposition of hard protective coatings: 1.6 m3
volume chambers, metal carbides, nitrides and borides from halide precursors, 1,600 kg of parts coated in one run in high power medium frequency pulsed plasmas (Rubig power supplies)(Courtesy of PATT Technologies Inc., Canada)
PECVD system for hard protective coatings
Lubricious coatingsfor hearing devices
MW ArPrecursor
Custom-fitted and calibrated protective devices
Multiple insertion into the ear
Outcome:• Quantitative tribological testing methodology• Friction reduced by a factor of 10• Production system transferred to Sonomax
0.0 0.5 1.0 1.5 2.0 2.50.0
0.2
0.4
0.6
0.8
1.0
Deposition time [hours]
Fric
tion
coef
ficie
nt, μ 100 mTorr
50 mTorr
1. Plasma-surface interactions and plasma systems
Film growth in the energetic plasma environment
2. Hard protective PECVD coatingsFrom tribological coatings for aerospace and automobile to biomedical applications
3. Optical and multifuntional coatings
From optical filters to smart windows, displays and solar cells
4. Conclusions and perspectives
Overview
SiO2 quartzPMMA
SiO2 glassPC
PET
MgF2
SiO2
Al2O3
Y2O3
ITOZrO2
SiN1.3
Ta2O5
Nb2O5
TiO2
PPFCSiO2:F
SiO2
Al2O3
PPHCPPOSSiOxNy
SiN1.3
SnO2
Ta2O5
SrTiO3
BaTiO3
TiO2:C:HNb2O5
pc-DTiO2
1.4 1.6 1.8 2.0 2.2 2.4 2.6
Material
Substrate
HighMediumLow
PECVD
PVD
Refractive index n @ 550 nm
Refractive index of PECVD coatings
Optical coating systems: From design to manufacture
0 5000 10000
1.6
1.8
2
2.2
Depth (nm)
n
V
RF PLASMA REACTOR
400 600 800 1000 1200 14000.0
0.2
0.4
0.6
0.8
1.0
Wavelength (nm)
T
Design Experimental
Optical filters:1. Targeted performance2. Materials and process3. Design strategy (discrete,
inhomogeneous – graded, quasi-homogeneous)
4. Fabrication + monitoring5. Quality control
OpenFilters: S. Larouche et al, Appl. Opt., 2008S. Larouche et al., Appl. Opt. 2004
Three-band rugate filterTiO2/SiO2
1 10 100
104
105
106N2, 40 mTorr
Rf-poweredelectrodeVb= -150 V
N+
N2+
MW plasma
N+
N2+
Rel
ativ
e In
tens
ity (
Cou
nts
/ s )
Ion Energy ( eV )
n550 ~ 2.0 (RF) n550 ~ 1.6 (MW)
Substrate
n
d
R. Vernhes et al., Appl. Opt. 2004, 2008
Graded layers
Multilayers
Single-material porous/dense optical filters
SiN-based filters, SiH4 + N2 mixtures, reactor HControl strategy: a) substrate bias, b) duty cycle
Electrochromic device - smart windowC.G. Granqvist, Sol. En. Mat. and Solar Cells 2008
Grid
Stainless Steel
n1 Zinc Oxide
Transparent Electrode (ITO)
i1 a‐SiGe alloy
Silver
p1 n2
p2n3
p3
i2 a‐SiGe alloy
i3 a‐Si alloy
Electron transfer layer (Alq3)
Barrier encapsulation layer
Glass substrate
Hole transfer layer (NPB)Hole injection layer (CuPc)
Cathode (‐) (Al/Ag/ITO)
Anode (+) (ITO)
Electron injection layer (Ba/LiF)
Light emitting organic layers (doped Alq3) ‐ H2O and O2sensitive
Front Glass Plate
Rear Glass Plate
Ion Storage Layer
Ion Conductor (Electrolyte)
Transparent Conductor (+)
ElectrochromicLayer
Transparent conductor (‐)
Active thin film devices
Triple-junction solar cellS. Guha, J. Yang, J. Non-Cryst. Sol. 2006
Thin film displayM. Zeuner, Private comm.
Large area (55 cm x 55 cm) MW PECVD coating system – I – barriers, AR coatings (Courtesy of Roth & Rau, Germany)
MW PICVD – commercial reactor for coating individual lamps - FJ. Segner, in “Thin Films for Optical Systems”, F.R. Flory (ed.), Marcel Dekker, NY 1995, p.209Schott Glasswerke
Commercial systems for PECVD optical coatings
Large area roll-to-roll deposition system for the fabrication of triple-junction photovoltaic cells: 2,500m long, 36 cm wide and 125 μm thick SS foils; 4 compartments: a) washing, b) back reflector sputtering (Al, ZnO), c) PECVD of 9-layer triple junction – nc-Si and SiGe, d) AR coating – ITO.System: 90m long, 3m tall, web speed 30 cm/min, 14,5 km of solar cells in 72 hrs.(Courtesy of United Solar Ovonic, USA)
Roll-to-roll PECVD deposition system
Conclusions and perspectives
• PECVD offers a possibility to fabricate films and coatings with a large range of functional properties (n, H, E, …) which are comparable (or better) with respect to their PVD counterparts (H/E, H3/E2, elastic rebound)
• Pulsed high density PECVD processes with pulse-control biasing open new opportunities to tailor the materials and device characteristics
• PECVD is suitable to coat 3D object and achieve high deposition rates (this includes coating internal surfaces)
• Large scale deposition of optical and protective tribological coatings has been demonstrated and is now in production
• PECVD offers new attractive design strategies and coating architectures (graded inhomogeneous coatings, dense/porous systems, nanocomposites, …)
• Work in progress: a) Range of materialsb) Refinement of the film architecturesc) Enhancement of new optical and tribo-corrosion protective systemsd) Design of optical coatings with improved tribo-mechanical properties and of
protective coatings with tailored optical propertiese) Systematic comparison of coatings prepared by p-PECVD, HIPIMS, mod. bias, ...
For more information about our work: www.polymtl.ca/larfis, [email protected]