General Description Features - Diodes Incorporated · PDF file500mA LOW NOISE LDO REGULATOR...

500mA LOW NOISE LDO REGULATOR AP2213

Data Sheet

1

Dec. 2012 Rev. 2. 0 BCD Semiconductor Manufacturing Limited

General Description

The AP2213 is a 500mA output current fixed voltageregulator which provides low noise, very low dropoutvoltage (typically 350mV at 500mA), very lowstandby current (1μA maximum) and excellent powersupply ripple rejection (PSRR 75dB at 100Hz) in bat-tery powered applications, such as handsets and PDAsand in noise sensitive applications, such as RF elec-tronics.

The AP2213 features individual logic compatibleenable/shutdown control inputs, a low power shut-down mode for extended battery life, over current pro-tection, over temperature protection, as well asreversed-battery protection.

The AP2213 has 2.5V, 3.0V and 3.3V versions.

The AP2213 is available in TO-252-2 (1), TO-252-2(3), SOIC-8 and SOT-223 packages.

Features

· Up to 500mA Output Current · Low Standby Current· Low Dropout Voltage: VDROP=350mV at 500mA· High Output Accuracy: ±1%· Good Ripple Rejection Ability: 75dB at 100Hz

and IOUT=100μA· Tight Load and Line Regulation· Low Temperature Coefficient· Over Current Protection· Thermal Protection· Reversed-battery Protection· Logic-controlled Enable Applications

· Laptop, Notebook, and Palmtop Computer· CD-ROM, CD-R/RW, DVD Driver· Portable Electronic· PC Peripheral

Figure 1. Package Types of AP2213

SOIC-8TO-252-2 (1) SOT-223TO-252-2 (3)


Data Sheet

2


Pin NumberPin Name Function

TO-252-2 (1)/TO-252-2 (3)

SOIC-8 SOT-223

3 3 2 VOUT Regulated output voltage

2 5, 6, 7, 8 1 GND Ground

1 2 3 VIN Input Voltage

1 EN Enable input: CMOS or TTL compatible input. Logic high=enable, logic low=shutdown

4 BYP Bypass capacitor for low noise operation

Figure 2. Pin Configuration of AP2213 (Top View)

Pin Configuration

M Package (SOIC-8)

D Package (TO-252-2 (1))

H Package (SOT-223)

VOUT

GND

VIN1

2

3

1

2

3

4

8

7

6

5

VOUT

GND

VIN GND

GND

GNDBYP

ENVIN

VOUT

GND1

2

3

(TO-252-2 (3))

Pin Description

1

2

3

VIN

VOUT

GND


Data Sheet

3


+

-Bandgap

Ref.

Current LimitThermal Shutdown

VIN

BYP

EN

GND

VOUT

Functional Block Diagram

Figure 3. Functional Block Diagram of AP2213

A for TO-252-2 (1)/(3)B for SOIC-8

1 (2) (3)

2 (5, 6, 7, 8) (1)

(1)

(4)

3 (3) (2)

A (B) (C)

C for SOT-223


Data Sheet

4


Package Temperature Range

Part Number Marking IDPacking Type

Lead Free Green Lead Free Green

TO-252-2 (1)/TO-252-2 (3) -40 to 125oC

AP2213D-2.5E1 AP2213D-2.5G1 AP2213D-2.5E1 AP2213D-2.5G1 Tube

AP2213D-2.5TRE1 AP2213D-2.5TRG1 AP2213D-2.5E1 AP2213D-2.5G1 Tape & Reel





SOIC-8 -40 to 125oC

AP2213M-2.5E1 AP2213M-2.5G1 2213M-2.5E1 2213M-2.5G1 Tube

AP2213M-2.5TRE1 AP2213M-2.5TRG1 2213M-2.5E1 2213M-2.5G1 Tape & Reel





SOT-223 -40 to 125oC

AP2213H-2.5TRE1 AP2213H-2.5TRG1 EH13C GH13C Tape & Reel

AP2213H-3.0TRE1 AP2213H-3.0TRG1 EH13E GH13E Tape & Reel

AP2213H-3.3TRE1 AP2213H-3.3TRG1 EH13F GH13F Tape & Reel

Circuit Type

Package

E1: Lead Free AP2213 -

TR: Tape and ReelBlank: Tube

Ordering Information

2.5: Fixed Output 2.5V3.0: Fixed Output 3.0V3.3: Fixed Output 3.3V

M: SOIC-8D: TO-252-2 (1)/TO-252-2 (3)

G1: Green

BCD Semiconductor's Pb-free products, as designated with "E1" suffix in the part number, are RoHS compliant. Products with"G1" suffix are available in green packages.

H: SOT-223


Data Sheet

5


Parameter Symbol Value Unit

Supply Input Voltage VIN 20 V

Enable Input Voltage VEN 20 V

Power Dissipation PD Internally Limited (Thermal Protection) W

Lead Temperature (Soldering, 10sec) TLEAD 260 oC

Junction Temperature TJ 150 oC

Storage Temperature TSTG -65 to 150 oC

ESD (Machine Model) ESD 300 V

Thermal Resistance (No Heatsink) θJA

TO-252-2 (1)/TO-252-2 (3) 90oC/W

SOIC-8 160

SOT-223 108

Note 1: Stresses greater than those listed under "Absolute Maximum Ratings" may cause permanent damage tothe device. These are stress ratings only, and functional operation of the device at these or any other conditionsbeyond those indicated under "Recommended Operating Conditions" is not implied. Exposure to "Absolute Max-imum Ratings" for extended periods may affect device reliability.

Parameter Symbol Min Max Unit

Supply Input Voltage VIN 2.5 18 V

Enable Input Voltage VEN 0 18 V

Operating Junction Temperature TJ -40 125 oC

Recommended Operating Conditions

Absolute Maximum Ratings (Note 1)


Data Sheet

6


Parameter Symbol Conditions Min Typ Max Unit

Output Voltage Accuracy ΔVOUT/VOUTVariation from specifiedVOUT

-1 1 %-2 2

Output VoltageTemperature Coefficient(Note 3)

ΔVOUT/ΔT 120 μV/oC

(ΔVOUT/VOUT)/ΔT 48 ppm/oC

Line Regulation VRLINE VIN=3.5V to 13.2V 1.5 4.5mV12

Load Regulation(Note 4)

VRLOAD IOUT=0.1mA to 500mA 1 7mV17

Dropout Voltage (Note 5) VDROP

IOUT=100μA 15 50

mV

70

IOUT=50mA 110 150

230

IOUT=100mA 140 250

300

IOUT=150mA 165 275

350

IOUT=300mA 250 400

500

IOUT=500mA 350 600

700

Standby Current ISTDVEN≤0.4V (shutdown) 0.01 1

μAVEN≤0.18V (shutdown) 5

Ground Pin Current (Note 6)

IGND

VEN≥2.0V, IOUT=100μA 100 150

μA180

VEN≥2.0V, IOUT=50mA 350 600

800

VEN≥2.0V, IOUT=150mA 1.3 1.9

mA

2.5

VEN≥2.0V, IOUT=300mA 4 10

15

VEN≥2.0V, IOUT=500mA 11 20

28

VIN=3.5V, IOUT=100μA, CIN=1.0μF, COUT=2.2μF, VEN≥2.0V, TJ=25oC, Bold typeface applies over -40oC≤TJ≤125oC (Note 2),unless otherwise specified.

Electrical CharacteristicsAP2213-2.5 Electrical Characteristics


Data Sheet

7


Parameter Symbol Conditions Min Typ Max UnitRipple Rejection PSRR f=100Hz, IOUT=100μA 75 dB

Current Limit ILIMIT VOUT=0V 700 1000 mA

Output Noise enoIOUT=50mA, COUT=2.2μF,100pF from BYP to GND

260

Enable Input Logic-lowVoltage

VIL Regulator shutdown 0.4 V0.18

Enable Input Logic-high Voltage VIH Regulator enabled 2.0 V

Enable Input Logic-low Current IILVIL≤0.4V 0.01 1

μAVIL≤0.18V 2

Enable Input Logic-high Current IIHVIL≥2.0V 5 20

μAVIL≥2.0V 25

Thermal Resistance θJC

TO-252-2 (1)/TO-252-2 (3) 20oC/WSOIC-8 45

SOT-223 31

HznV /

Note 2: Specifications in bold type are limited to -40oC≤TJ≤125oC. Limits over temperature are guaranteed by design, but nottested in production.Note 3: Output voltage temperature coefficient is defined as the worst case voltage change divided by the total temperaturerange.Note 4: Regulation is measured at constant junction temperature using low duty cycle pulse testing. Parts are tested for loadregulation in the load range from 0.1mA to 500mA. Changes in output voltage due to heating effects are covered by the thermalregulation specification.Note 5: Dropout voltage is defined as the input to output differential at which the output voltage drops 1% (TJ=25oC) or 2% (-

40oC≤TJ≤125oC) below its nominal value measured at 1V differential.Note 6: Ground pin current is the regulator quiescent current plus pass transistor base current. The total current drawn from the

Electrical Characteristics (Continued)


AP2213-2.5 Electrical Characteristics


Data Sheet

8


VIN=4V, IOUT=100μA, CIN=1.0μF, COUT=2.2μF, VEN≥2.0V, TJ=25oC, Bold typeface applies over -40oC≤TJ≤125oC (Note 2),unless otherwise specified.

AP2213-3.0 Electrical CharacteristicsElectrical Characteristics (Continued)



-1 1 %-2 2



(ΔVOUT/VOUT)/ΔT 40 ppm/oC

Line Regulation VRLINE VIN=4V to 13.2V 1.5 4.5mV12




IOUT=100μA 15 50

mV

70

IOUT=50mA 110 150

230

IOUT=100mA 140 250

300

IOUT=150mA 165 275

350

IOUT=300mA 250 400

500

IOUT=500mA 350 600

700




IGND

VEN≥2.0V, IOUT=100μA 100 150

μA180

VEN≥2.0V, IOUT=50mA 350 600

800

VEN≥2.0V, IOUT=150mA 1.3 1.9

mA

2.5


15

VEN≥2.0V, IOUT=500mA 11 20

28


Data Sheet

9



40oC≤TJ≤125oC) below its nominal value measured at 1V differential.Note 6: Ground pin current is the regulator quiescent current plus pass transistor base current. The total current drawn from thesupply is the sum of the load current plus the ground pin current.


VIN=4V, IOUT=100μA, CIN=1.0μF, COUT=2.2μF, VEN≥2.0V, TJ=25oC, Bold typeface applies over -40oC≤TJ≤125oC (Note 2),unless otherwise specified.





260





μAVIL≤0.18V 2


μAVIL≥2.0V 25


TO-252-2 (1)/TO-252-2 (3) 20oC/WSOIC-8 45

SOT-223 31

HznV /


Data Sheet

10




-1 1 %-2 2



(ΔVOUT/VOUT)/ΔT 36.3 ppm/oC

Line Regulation VRLINE VIN=4.3V to 13.2V 1.5 4.5mV12




IOUT=100μA 15 50

mV

70

IOUT=50mA 110 150

230

IOUT=100mA 140 250

300

IOUT=150mA 165 275

350

IOUT=300mA 250 400

500

IOUT=500mA 350 600

700




IGND

VEN≥2.0V, IOUT=100μA 100 150

μA180

VEN≥2.0V, IOUT=50mA 350 600

800

VEN≥2.0V, IOUT=150mA 1.3 1.9

mA

2.5


15

VEN≥2.0V, IOUT=500mA 11 20

28


AP2213-3.3 Electrical CharacteristicsElectrical Characteristics (Continued)


Data Sheet

11





260





μAVIL≤0.18V 2


μAVIL≥2.0V 25


TO-252-2 (1)/TO-252-2 (3) 20oC/WSOIC-8 45

SOT-223 31

HznV /


40oC≤TJ≤125oC) below its nominal value measured at 1V differential.Note 6: Ground pin current is the regulator quiescent current plus pass transistor base current. The total current drawn from thesupply is the sum of the load current plus the ground pin current.





Data Sheet

12


Typical Performance Characteristics

Figure 4. Output Voltage vs. Junction Temperature Figure 5. Dropout Voltage vs. Junction Temperature

Figure 6. Ground Pin Current vs. Output Current Figure 7. Ground Pin Current vs. Junction Temperature

-60 -40 -20 0 20 40 60 80 100 120 1402.484

2.486

2.488

2.490

2.492

2.494

2.496

2.498

2.500

2.502

Out

put V

olta

ge (V

)

Junction Temperature (oC)

AP2213-2.5VIN=3.5V, IOUT=10mACIN=1μF, COUT=2.2μF

-60 -40 -20 0 20 40 60 80 100 120 14050

100150200250300350400450500550600650700750800850

Dro

pout

Vol

tage

(mV)


IOUT=50mA IOUT=100mA IOUT=150mA IOUT=300mA IOUT=500mA

CIN=1μF, COUT=2.2μF

0 100 200 300 400 5000

1

2

3

4

5

6

7

8

9

10

Gro

und

Pin

Cur

rent

(mA)

Output Current (mA)

TA=25oCCIN=1μF, COUT=2.2μF

-60 -40 -20 0 20 40 60 80 100 120 1400

2

4

6

8

10

12

14

16

18

20

Gro

und

Pin

Cur

rent

(mA

)

Junction Temperature (0C)

IOUT=50mA IOUT=100mA IOUT=150mA IOUT=300mA IOUT=500mA

AP2213-2.5VIN=3.5V, CIN=1μF, COUT=2.2μF


Data Sheet

13


Typical Performance Characteristics (Continued)

Figure 8. Enable Current vs. Junction Temperature Figure 9. Enable Voltage vs. Junction Temperature

Figure 10. Output Noise vs. Frequency

-60 -40 -20 0 20 40 60 80 100 120 1402

3

4

5

6

7

8

9

10

11

12

13

VEN=1.8V VEN=2V VEN=3V VEN=3.7V

Ena

ble

Cur

rent

(μA

)


AP2213-2.5, VIN

=3.5VCIN=1μF, COUT=2.2μF, IOUT=100μA

-60 -40 -20 0 20 40 60 80 100 120 1400.5

0.6

0.7

0.8

0.9

1.0

1.1

1.2

1.3

1.4

1.5

1.6

1.7

1.8

VEN=logic high VEN=logic low

Ena

ble

Vol

tage

(V)


AP2213-2.5CIN=1μF, COUT=2.2μFIOUT=100μA, VIN=3.5V

10 100 1k 10k 100k 1M 10M

100

10

1

0.1

0.01

0.001

Frequency (Hz)

AP2213-2.5IOUT=10mA, CIN=1μF, COUT=2.2μFVIN=3.5V, CBYP=100pF

0.0001

Out

put N

oise

(

)μV

/ H

z

Figure 11. Line Transient(Conditions: VIN=3.4 to 4.4V, VEN=2V, IOUT=100μA,

Time (200μs/Div)

AP2213-2.5

3.5

4.5

0

ΔVO

UT

(10m

V/D

iv)

V I

N (1

V/D

iv)

10

CBYP=100pF, COUT=2.2μF)

2.5

5.5

-10

-20


Data Sheet

14


Figure 13. VEN vs. VOUT(Conditions: VEN=0 to 2V, VIN=3.5V, IOUT=30mA,

CBYP=open, CIN=1μF, COUT=2.2μF)

VEN

(1V

/Div

)

Time (40μs/Div)

AP2213-2.5

0

1

0

1


Figure 12. Load Transient (Conditions: VIN=3.5V, CBYP=100pF, VEN=2V,

I OU

T (0

.5A/

Div

)

ΔV

OU

T (1

0mV/

Div)

Time (200μs/Div)

AP2213-2.5

-10

0

0

0.5

VO

UT

(1V/

Div

)

Figure 14. PSRR vs. Frequency

10mA

IOUT=10 to 500mA, CIN=1μF, COUT=2.2μF)

1

-0.5

-20

-30

2

3

2

-1

10 100 1k 10k 100k 1M0

10

20

30

40

50

60

70

80

90

100

PSR

R (d

B)

Frequency (Hz)

AP2213-2.5VIN=3.5V, VRIPPLE=1VPP

IOUT=10mA, COUT=2.2μF

Figure 15. Power Dissipation vs. Ambient Temperature

25 50 75 100 125 1500.0

0.2

0.4

0.6

0.8

1.0

1.2

1.4

Pow

er D

issi

patio

n (W

)

Ambient Temperature (oC)

TO-252-2(1)/(3) PackageNo Heatsink


Data Sheet

15



Figure 16. Power Dissipation vs. Ambient Temperature Figure 17. ESR vs. Output Current

Figure 18. ESR vs. Output Current

0 50 100 150 200 250 300 350 400 450 5000.01

0.1

1

10

100

1000

ESR

(Ω)

Output Current (mA)

COUT

=1μFNo Bypass Capacitor

Stable Area

0 50 100 150 200 250 300 350 400 450 5000.01

0.1

1

10

100

1000

ESR

(Ω)

Output Current (mA)

COUT

=2.2μFNo Bypass Capacitor

Stable Area

25 50 75 100 125 1500.0

0.2

0.4

0.6

0.8

1.0

1.2

1.4

Pow

er D

issi

patio

n (W

)

Ambient Temperature (oC)

SOIC-8 PackageNo Heatsink

Figure 19. ESR vs. Output Current

0 50 100 150 200 250 300 350 400 450 5000.01

0.1

1

10

100

1000

ESR

(Ω)

Output Current (mA)

COUT=4.7μFNo Bypass Capacitor

Stable Area


Data Sheet

16


Figure 20. Typical Application of AP2213 (Note 7)

Typical Application

BYP

100pF

EN

GND

AP2213-2.5VIN=3.5V VOUT=2.5V

2.2μF1μF

VIN VIN VOUT VOUT

COUT

CBYP

CIN

Note 7: Dropout voltage is 350mV when TA=25oC. In order to obtain a normal output voltage, VOUT+0.35V is the minimuminput voltage which will results a low PSRR, imposing a bad influence on system. Therefore, the recommended input voltageis VOUT+1V to 18V. For AP2213-2.5 version, its input voltage can be set from 3.5V(VOUT+1V) to 18V.

17

BCD Semiconductor Manufacturing Limited


Data Sheet

Dec. 2012 Rev. 2. 0

Input CapacitorA 1μF minimum capacitor is recommended to beplaced between VIN and GND.

Output CapacitorIt is required to prevent oscillation. 1μF minimum isrecommended when CBYP is unused. 2.2μF mini-mum is recommended when CBYP is 100pF. The out-put capacitor may be increased to improve transientresponse.

Noise Bypass CapacitorBypass capacitor is connected to the internal voltagereference. A small capacitor connected from BYP toGND make this reference quiet, resulting in asignificant reduction in output noise, but the ESRstable area will be narrowed. In order to keep theoutput stability, it is recommended to use the bypasscapacitor no more than 100pF.

The start-up speed of the AP2213 is inverselyproportional to the value of reference bypasscapacitor. In some cases, if output noise is not amajor concern and rapid turn-on is necessary, omitCBYP and leave BYP open.

Power DissipationThermal shutdown may take place if exceeding themaximum power dissipation in application. Under allpossible operating conditions, the junction tempera-

ture must be within the range specified under abso-lute maximum ratings to avoid thermal shutdown. To determine if the power dissipated in the regulatorreaches the maximum power dissipation (see figure16, 17), using: TJ = PD*θJA + TAPD=(VIN-VOUT)*IOUT+VIN*IGND

Where: TJ≤TJ(max), TJ(max) is absolute maximum rat-ings for the junction temperature; VIN*IGND can beignored due to its small value.

TJ(max) is 150oC, θJA is 90oC/W for TO-252-2 (1)/

TO-252-2 (3) package and 160oC/W for SOIC-8package.

Example: For 2.5V version packaged in SOIC-8,IOUT=500mA, TA=50oC, VIN(Max) is:

(150oC-50oC)/(0.5A*160oC/W)+2.5V=3.75V

Therefore, for good performance, please make surethat input voltage is less than 3.75V without heatsinkwhen TA=50oC.

Application Information


Data Sheet

18


Mechanical Dimensions

Unit: mm(inch)TO-252-2 (1)

1.35

0(0.

053)

1.65

0(0.

065)

0.60

0(0.

024)

0.90

0(0.

035)

4.500(0.177)4.700(0.185)

3°4°

3.80

0RE

F(0.

150R

EF)

4.80

0(0.

189)

6.50

0(0.

256)

4.300(0.169)5.400(0.213)

1.40

0(0.

055)

1.78

0(0.

070)

0.000(0.000)0.127(0.005)

0.450(0.018)0.580(0.023)

2.300TYP

9.50

0(0.

374)

9.90

0(0.

390)

0.700(0.028)0.900(0.035)0.500(0.020)0.700(0.028)

5.200(0.205)5.400(0.213)

6.450(0.254)6.650(0.262)

2.55

0(0.

100)

2.90

0(0.

114)

5.45

0(0.

215)

6.25

0(0.

246)

2.200(0.087)2.400(0.094)

5° 5°

8°

0.450(0.018)0.580(0.023)

19



Data Sheet

Dec. 2012 Rev. 2. 0

Mechanical Dimensions (Continued)

Unit: mm(inch)TO-252-2 (3)

1.29±0.1

2.90

0REF

1.40

0(0.

055)

1.70

0(0.

067)

0.470(0.019)0.600(0.024)

59

089.

800(

0.38

6)10

.400

(0.4

09)

2.200(0.087)2.380(0.094)

0.900(0.035)1.100(0.043)

4.700REF

6.500(0.256)6.700(0.264)

5.130(0.202)5.460(0.215)

0.15

0(0.

006)

0.75

0(0.

030)

6.00

0(0.

236)

6.20

0(0.

244)

0.720(0.028)0.850(0.033)

2.286(0.090)BSC

0.720(0.028)0.900(0.035)

0.90

0(0.

035)

1.25

0(0.

049)

1.80

0REF

80

0.60

0(0.

0 24)

1.00

0(0.

039)

73

95

5.25

0REF

Option 1

Option 2


Data Sheet

20



SOIC-8 Unit: mm(inch)

φ

0°8°

1°5°

R0.150(0.006)

R0.

150(

0.00

6)

1.000(0.039)

0.330(0.013)0.510(0.020)

1.350(0.053)1.750(0.069)

0.100(0.004)0.300(0.012)

0.900(0.035)

0.800(0.031)

0.200(0.008)

3.800(0.150)4.000(0.157)

7°

7°

20:1D

1.270(0.050) TYP

0.190(0.007)0.250(0.010)

8°

D 5.800(0.228)6.200(0.244)

0.675(0.027)0.725(0.029)

0.320(0.013)

8°

0.450(0.017)0.800(0.031)

4.700(0.185)5.100(0.201)

Note: Eject hole, oriented hole and mold mark is optional.

φ

21



Data Sheet

Dec. 2012 Rev. 2. 0


SOT-223 Unit: mm(inch)

3.30

0(0.

130)

3.70

0(0.

146)

6.70

0(0.

264)

7.30

0(0.

287)

2.900(0.114)3.100(0.122)

0.610(0.024)

0.810(0.032)2.300(0.091)

TYP

6.300(0.248)6.700(0.264)

1.750(0.069)TYP

4.500(0.177)

4.700(0.185)

0.020(0.001)

0.100(0.004)

1.520(0.060)

1.800(0.071)1.500(0.059)1.700(0.067)

0.250(0.010)

0.350(0.014)

0.250(0.010)

0° 10°

0.900(0.035)MIN

IMPORTANT NOTICE

BCD Semiconductor Manufacturing Limited reserves the right to make changes without further notice to any products or specifi-cations herein. BCD Semiconductor Manufacturing Limited does not assume any responsibility for use of any its products for anyparticular purpose, nor does BCD Semiconductor Manufacturing Limited assume any liability arising out of the application or useof any its products or circuits. BCD Semiconductor Manufacturing Limited does not convey any license under its patent rights orother rights nor the rights of others.

- Wafer FabShanghai SIM-BCD Semiconductor Manufacturing Limited800, Yi Shan Road, Shanghai 200233, ChinaTel: +86-21-6485 1491, Fax: +86-21-5450 0008

BCD Semiconductor Manufacturing LimitedMAIN SITE

REGIONAL SALES OFFICEShenzhen OfficeShanghai SIM-BCD Semiconductor Manufacturing Co., Ltd. Shenzhen OfficeAdvanced Analog Circuits (Shanghai) Corporation Shenzhen OfficeRoom E, 5F, Noble Center, No.1006, 3rd Fuzhong Road, Futian District, Shenzhen 518026, China Tel: +86-755-8826 7951Fax: +86-755-8826 7865

Taiwan OfficeBCD Semiconductor (Taiwan) Company Limited4F, 298-1, Rui Guang Road, Nei-Hu District, Taipei, TaiwanTel: +886-2-2656 2808Fax: +886-2-2656 2806

USA OfficeBCD Semiconductor Corporation30920 Huntwood Ave. Hayward,CA 94544, U.S.ATel : +1-510-324-2988Fax: +1-510-324-2788

- IC Design GroupAdvanced Analog Circuits (Shanghai) Corporation8F, Zone B, 900, Yi Shan Road, Shanghai 200233, ChinaTel: +86-21-6495 9539, Fax: +86-21-6485 9673


http://www.bcdsemi.com


IMPORTANT NOTICE

BCD Semiconductor Manufacturing Limited reserves the right to make changes without further notice to any products or specifi-cations herein. BCD Semiconductor Manufacturing Limited does not assume any responsibility for use of any its products for anyparticular purpose, nor does BCD Semiconductor Manufacturing Limited assume any liability arising out of the application or useof any its products or circuits. BCD Semiconductor Manufacturing Limited does not convey any license under its patent rights orother rights nor the rights of others.

- Wafer FabShanghai SIM-BCD Semiconductor Manufacturing Co., Ltd.800 Yi Shan Road, Shanghai 200233, ChinaTel: +86-21-6485 1491, Fax: +86-21-5450 0008

MAIN SITE

REGIONAL SALES OFFICEShenzhen OfficeShanghai SIM-BCD Semiconductor Manufacturing Co., Ltd., Shenzhen OfficeUnit A Room 1203, Skyworth Bldg., Gaoxin Ave.1.S., Nanshan District, Shenzhen,China Tel: +86-755-8826 7951Fax: +86-755-8826 7865

Taiwan OfficeBCD Semiconductor (Taiwan) Company Limited4F, 298-1, Rui Guang Road, Nei-Hu District, Taipei, TaiwanTel: +886-2-2656 2808Fax: +886-2-2656 2806

USA OfficeBCD Semiconductor Corp.30920 Huntwood Ave. Hayward,CA 94544, USATel : +1-510-324-2988Fax: +1-510-324-2788

- HeadquartersBCD Semiconductor Manufacturing LimitedNo. 1600, Zi Xing Road, Shanghai ZiZhu Science-based Industrial Park, 200241, ChinaTel: +86-21-24162266, Fax: +86-21-24162277

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