GENCOA - KCMCkcmc.biz/v2/download/GENCOA/Speedflo_presentation_gencoa.pdf · 2015. 8. 20. · •...
Transcript of GENCOA - KCMCkcmc.biz/v2/download/GENCOA/Speedflo_presentation_gencoa.pdf · 2015. 8. 20. · •...
Other activities include on-site process implementation, training and tuning
GENCOA products cover 3 sputtering related areas
Magnetron Sputter Cathodes
planar & rotatable
Reactive gas controller & endpoint detector
Linear ion sources
GENCOA Key Company Facts
• GENCOA is a private limited company (Ltd)
• Founded 1995 by Dr Dermot Monaghan
• Located in Liverpool, UK
• Employs 34 people 6 design (Pro E 3D CAD) 4 process development & simulation 14 assembly & test 4 sales & tech support (2 Asia based) 3 administration & accounts 3 hardware & software (Speedflo) • > 3000 magnetrons in the field
• > 500 speedflo systems in the field 95% market share
Sales agents / distributors located around the world and 95% of output is exported from the UK Main markets are USA, EU, Japan, Taiwan, Korea & China Local Gencoa based staff for technical support in USA, EU & Asia
GENCOA worldwide company presence
Reactive gas process controllers
Reactive gas process controllers
Speedflo used in glass, solar, display & OLED sectors & makes today’s & tomorrow’s products possible
Cost of ownership of reactive feedback elements
• Line speed increase x 3-5
• Return on Speedflo (reactive controller) investment < 30 days
Si and SiOx rates at 23 kW (dual rotatable)
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30
60
90
120
0 20 40 60 80 100
Setpoint (O2 emission 777nm)
Co
ati
ng
ra
te (
nm
. m
/min
)
Reactive Sputtering Monitoring
Reactive gas input
Exhaust
Substrate
Target Control
Part. Press.
Transp.,σ,n Voltage, Freq. Plasma emmission
Process Inputs / Outputs
Inputs
• PEM - Plasma emission monitor
• Metal line / multiple lines
• Gas line • Argon line • Plasma spectrum
• Target voltage
• lambda sensor gas partial pressure
Outputs (Actuator)
• Reactive Gas Flow
• Target Voltage
• Target Power Output
• Gas partial pressure (Ar / throttle valve)
Pro / Cons of Inputs
Inputs
• PEM - Plasma emission monitor
• Metal line / multiple lines
• Gas line • Argon line • Plasma spectrum
• Target voltage
• lambda sensor gas partial pressure
• PEM high speed, most universal / powerful & can be multi-zone but requires fibre-optics
• Target voltage is high speed and low cost but “single zone” and in the past for certain material / gas combinations
• Gas partial pressure - multi-gas expensive, but single gas lower cost, requires sensor in chamber
The ideal controller handles all
Inputs
• PEM • Metal line / multiple
lines • Gas line • Argon line • Plasma spectrum
• Target voltage • Gas partial pressure
Outputs (Actuator)
• Reactive Gas Flow
• Target Voltage
• Target Power Output
• Gas partial pressure (Ar / throttle valve)
• Why is Mulit-function important?
• Some processes are hard to control and drifts / fluctuations occur
Speedflo multi-channel controller
Reactive deposition
A ready made solution
• Large area reactive sputtering 30 years old • Mature processing products available • Reactive sputtering in the high rate metal mode is highly unstable process so appropriate process control the critical factor • Gencoa have implemented reactive process control over many different production plants with > 3m glass sizes • More than 500 Speedflo systems controlling reactive production plants around the world • Gencoa can set-up the process control on-site or connect remotely to the Speedflo box
Digital software drive process controller
The data processing in the Speedflo box (not PC) for high speed robust operation
Typical closed loop feedback times of 5-20 msec – from signal receipt to gas delivery in the target area.
Multiple sensors control and trim gas over large areas
±1.5% uniformity already commonplace on 1-3m glass
• Choice of sensor types available
Lambda Sensors
Gencoa have a range of optical components
P.E.M requires the light signal from the plasma to be transmitted
Measures excess gas in the process
Penning Gauge based P.E.M. sensor used for batch processes with plasma fluctuations
Upto 4 different wavelengths can be combined
Speedflo spectrometer based sensor displays the full plasma spectrum information
Additional sensor control box included
Gencoa Lambda sensors measure the O2 concentration in the vacuum chamber
Speedflo different sensor responses to a gas ramp - hysteresis
0
1
2
3
4
5
4950 5050 5150 5250 5350 5450 5550 5650 5750 5850 5950
Sensor 1 (PENNING)
Actuator 1 (METER)
Setpoint 1
Sensor 2 (LAMBDA)
Actuator 2 (MFC)
Setpoint 2
The MKS 1179A is a suitable valve
The gas flow valves need to have a fast enough response to match the process needs
msec
Gencoa will advise on with PEM sensor locations and gas delivery method
& the sizes of the MFC’s required for the process
All components need to be integrated correctly
to ensure optimum operation
Reactive AZO Sputtering
Hysteresis but can be controlled with feedback
ZnAl dual rotatable + O2 - TRIPLE RAMP CONDITIONING
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0 50 100 150 200 250Time, s
Sign
als,
% SetPoint (%)Sensor (%)Actuator (%)
Process control window for Speedflo related to response for SiOx
in typical AR layer stack for flat screen television
Example of controlled reactive dual rotatable ITO deposition runs
InSn + O2 Speedflo control during production tests
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1
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7
0 200 400 600 800 1000 1200 1400
time, s
Sig
nals
Sensor (V)Actuator (V)SetPoint (V)
85% Transmission13Ω Sheet resistance
Reactive dual rotatable AZO deposition process window
ZnAl + O2 reactive control dual rotatable
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0 100 200 300 400 500Time, s
MFC
feed
back
, scc
m
0
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100
O2 P
EM a
nd ta
rget
V
Sens
ors
(%)
Gas Feedback (SCCM)O2 PEM value %O2 PEM setpoint %Target V %
Process control using plasma monitoring
TCO film property tuning using ‘Speedflo’ reactive sputtering
controller with a dual rotatable magnetron
InSn+O2 using Speedflo control for reactive production of ITO
0
20
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38 40 42 44 46 48 50 52O2 Set-point (%)
Shee
t res
ista
nce
(ohm
s)
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60
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Tran
smis
sion
(%)
Sheet resistanceTransmission
Development Optimised
ZnAl + O2 reactive control dual rot rotatable
0102030405060708090
100
0 1000 2000 3000
Time, s
MF
C feedback, sccm
0
20
40
60
80
100
O2 P
EM
and targ
et V
S
ensors
%
Gas Feedback (SCCM)O2 PEM value %O2 PEM setpoint %
Changed Ks to regain control
The controller requires ‘tuning’ to provide optimum control – reactive
AZO sputtering controller with a dual rotatable magnetron
P.E.M based reactive sputtering controllers already work in large scale Low-E glass
SiOx AC dual 3 Master (A, B & C) and 1 slave (1G) control
-100
-80
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-40
-20
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Time, s
Se
nso
r sig
na
ls
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Ac
tua
tor
sig
na
l %
Sensor B(%)Sensor target V(%)Actuator 2B(%)Actuator 1G(%)
Sensor B setpoint = 50%
target voltage variation
Master O2 flow (2B)
Slave O2 flow 1G=2 x (2B)
P.E.M control response to load-lock activity
Rate enhancement for reactive sputtering controllers
P.E.M set-point verses dynamic deposition rate
Si and SiOx rates at 23 kW (dual rotatable)
0
30
60
90
120
0 20 40 60 80 100
Setpoint (O2 emission 777nm)
Co
ati
ng
ra
te (
nm
. m
/min
)
Rate enhancement for reactive sputtering controllers
P.E.M set-point verses dynamic deposition rate
AlOx depasition rate. Dual rotatable magnetron.
0
20
40
60
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100
1030507090110
Deposition rate (A.U.)
Targ
et v
olta
ge se
tpoi
nt, %
NbOx-SiOx layer gain in thickness after climate tests
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KT1_1 KT1_2 KT1_3 KT1_4 KT1_5 KT1_6 KT1_7Sample reference
Laye
r thi
ckne
ss, n
m
NbOx (SiOx at 45%)NbOx (SiOx at 60%)SiOx at 45%PEMSiOx at 60%PEM
+ 0.8 nm after climate test
+ 1.4 nm after climate test
Rate or layer properties determine the controller set-point
On-site process training and support by Gencoa personnel
From UK office or local GENCOA employees
Gencoa provide process controllers, remote access or on-site process tuning
Typical AR production line Speedflo installation
Rotatable & planar sputtering modules with speedflo control available
Complete process control modules including electronics
Rear cabinet will house all the control and components
PEM sensors have argon bleed lines (not shown) to prevent coating of the optics
All parts have been positioned for optimum process operation
Conclusions
• Gencoa can provide a range of process control solutions based upon the Speedflo system for high rate oxide & nitride layers. • As an example with the DLIM magnets, Speedflo controller and Gencoa gas bars a rate of between 40nm.m/min and 60nm.m/min will be achieved for SiO2 from 1 dual magnetron pair running at around 15kW AC per m length of target. • The actual rate will be 40-55nm.m/min and will depend upon the coating properties required from the film. • Gencoa can offer on-site process implementation and optimization based upon many years of experience on a wide range of processes and machine platforms.