GaN Integrated Circuits for Highest Performance Power Supplies GaN Integrated Circ… · GaN...

GaN Integrated Circuits for Highest Performance

Power Supplies

Thierry Bouchet, Dominique Bergogne

APEC, March 19th 2019

www.ganwise.com [email protected]

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http://www.ganwise.com/

How to integrate power block delivering 15W (smart phone)

up to 60W -100W (computer / display / TV)?

Business model

Gan-ICsPower + driverMass production (TMSC)Reference designApplication support

Offer to market

National R&D centerGaNWise

Fabless company

Innovative patented circuit architecture for AC/DC Power supply

Design expertise and improved GaN/Si Design Kit for GaN IC

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Business environnent

Innovation from national R&D center

Industrial partner for applications

Industrial partner for manufacturing

GANWISE Fablesscompany

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Wall outletBattery Operated Consumer ElectronicsHouse Hold Power Supplies, ChargerTV displays, datacenters

Wall outlet

Charger

TV displays

Data centers

15W 100W 500W 3kW



Breakthrough: size & efficiency

Power density(W/inch3)

Efficiency

98 %94 %90 %

Integration of GaN IC with Innovative Architectures

45

30

15

Conventional Silicon Baseddesigns

100 %4 of 26



GaN integration : Why ?

• High frequency means high speed commutations,

• High speed commutation (high dv/dt and di/dt) produces unwanted perturbations due to stray inductances in the circuit, V=L di/dt. Stray inductances come from packaging and coppers tracks in PCB connecting various elements in the power signal path.

Integrating along the power path reduces stray inductance and allows fast and clean commutations.

GaN integration means getting the power transistors together with the gate drivers on the same die to start with.

GaN for power conversion has now proved its ability to enable higher operatingfrequencies and higher efficiency, however…

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Our innovative e-DAB architecture• Innovative embedded Dual Active Bridge (e-DAB)

AC input bridge using AC switchesIntegrated in one die !

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4 GaN Bidir

• 1 gate BidirectionalGaN transistors• ZVS detection & control

Smaller High power density & rectifier bridge removed with bidirectional devices

Reliability reduced high voltage component count

More efficient = low losses with ZVS in the DAB architecture

Cost effective= TSMC GAN/Si CMOS compatible technology high volume capability

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DAB architecture (AC-DC)

Monolithic Power GaN integrated circuit (Driver + Power in one die)

Done with a patented innovative e-DAB architecture

On a new GaN/Si qualified technology from TSMC

Our Product: GAN IC

+

Power cell driver GaN Power IC

=

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Half bridge + driver + level shifterHalf bidirectional bridge + driver+ level shifter

First Targeted GaN IC: half bridge



e-DAB architecture benefits

Power (W)

Efficiency (%)

27 45 65 100

90

92

94

96

98

100

e-DAB

ACF PFC-LLC

12

3

• Improve efficiency: 96% to 98%

• Reduce size: power density > 3kW/l

• Compatible for all power range : PFC integrated in the primary side

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100W, 1MHz AC-DCpower supply tests

240V AC 20 VDC

Smaller

More efficient

Integrating Magnetics

• Super Flat 1mm thick Magnetic Core integrated in PCB

100W, 1MHz prototypeintegrated transformerusing proprietary magnetic core

(CEA-tech Liten)

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Integrated transformer

Target : high frequency planar compact transformer working at 1MHz with optimized yield upper97%.

Optimize Copper and Fe losses.We use Ferroxcube material with 30mT and we have• Fe losses: 1W• Copper losses: 2WTransformer is included in the PCB board. Primary side is inside the PCB board.

Half bridge 20mRHalf bridge 100mR

Active Clamp Flyback < 65W

e-DAB > 65W

Half Bidirectional bridge 100mR

Half bridge 100mR

+ Gate Drivers

Scalable current capability

Integrated circuit chips

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Device Static characterisation

• Validation of static behavior of all devices in the first lot

• Discrete power transistor 650V/100mW /50mW and 20mW (Ron.S=4 mW.cm2)

• With kelvin source and current sense pad

• Bidirectional power transistor 650V/40mW & 80mW

• Driver for half bridge 1MHz operation

• Level shifter for half bridge

• Pad ESD protection

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Device Static characterisation

Vth=1,5V

Ron=50mW

BV>650V @ 1uA

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3 mm square

B6B

790#

01

B6B

790#

01

B6B

790#

03

B6B

790#

03

B6B

725#

04

B6B

725#

04

B6B

725#

05

B6B

725#

05

24

26

28

30

32

34

36

38

40

RO

N (W

.mm

)

before stress

after stress

RON comparison - T1A

slow

fast

standard

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B6B

725#

04

B6B

725#

04

1.0

1.2

1.4

1.6

1.8

2.0V

th t

an

ge

nt

(V)

Vth forward before stress - T1A

T=25°C

T=150°C

B6B

725#

04

B6B

725#

04

30

40

50

60

Ro

n (W

.mm

)

Ron before stress - T1A

T=25°C

T=150°C

Vth decreases with the temperature

• Vth@25°C = 1,5V

• Vth@150°C = 1,3V

RDS(ON) increases with the temperature

• Ron@25°C = 26 Ω.mm

• Ron@150°C = 53 Ω.mm

B6B

725#

04

B6B

725#

04

10-9

10-8

10-7

Idss@

650V

(A

/mm

)

Idss@650V comparison between 25°C and 150 °C - T1A

T=25°C

T=150°C

Idss increase with the temperature

• Idss@25°C = 1,9.10-9 A/mm

• Idss@150°C = 1,3.10-7 A/mm

Temperature characterisation

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10 100 1000

0.01

0.1

1

Capacitance (

pF

/mm

)

Vds (V)

COSS

CRSS

CISS

CRSS, COSS and CISS from T2A (die X5Y4)

Spec T = 25°C

Ciss (pF/mm) 0,64

Coss (pF/mm) 0,1

Crss (pF/mm) 4.10-3

Dynamic device characterisation

AC magnitude = 30mV

f = 100 kHz



Device dynamic evaluation

• Integrated half bridge tested in buck mode 1MHz / 400V / 2A

VGS LS

VDS LS

I out

HS

LS

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First GaN IC in QFN package• GaN IC assy in 8x8mm QFN package: half bridge with source sense and source

kelvin

• Use for prototyping the 100W USB type C PD power supply

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First innovative 100W USB PD demonstrator

• Target is to validate the new innovative system topology with our first GaN ICo 100Wo 96% of efficiency (+2% vs actual state of the art)o Using new innovative ST controller STUSB4761 to manage USB C protocolo Design with EMI filterso Available for demonstration in April 2019

STUSB4761Power Delivery

Controller

HV GaN transistors & driversGaN IC

PrimaryControler

Transformer

LV Si transistor

passivespassives

Innovative e-DAB architecture (design, prototype realization, test, BOM, support)

STUSB4761 controllerUSB PD supplier and support

GaN IC GaNWISE(design, device)

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100W USB PD demonstrator



Wall plug application

• What are the challenges to integrate ?

Integration

Limited volume of wall plug

Thermal dissipation

Robustness & device

interoperability

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Technology challenges for wall plug integration

Integration

Limited volume of wall plug

GaN technology with innovative power

GaN integrated circuit and system

architecture

(GANWISE GAN IC + e-DAB)

Robustness &

device interoperability

Certified USB Power Delivery controllers

Smart USB Power Delivery controllers with

embedded protections

(overvoltage / current / temp)

Thermal dissipation Smart USB Power Delivery controllers

with power sharing

New discrete component technologies

• How to integrate power block delivering 15W (smart phone) up to 60W -100W (computer / display / TV)?

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Others applications

• GaN is robust to radiation !

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DC-DC converters for spatial market

• GaN is working at high temperature > 200°C

Motor drive for industrialapplications in harsh environment

GND

CC2

CC1

Physical

Layer

port status

VSENSE_DISCH

voltage

monitoring

Discharge

path

Policy

Engine

ISENSE_DISCH

CC

line

access

Protocol

Layer

Device

Policy

Manager

BMC

driver

VCONN_VSYS

VCONN SW

(OVP & OCP)

CC/CV

FB

OPTO_DRV

FAULT

VDD

POR

Internal

supply

T1

TSENSE

SCL

SDAI²C

slave

T2

T3

VBUS_EN_SRC

Port C

controller

Status

register

Standalone USB PD controller STUSB4761 with integrated CC/CV for AC/DC applications

SCL

TSENSE

SDA

GND

VBUS_EN_SRC

CC1

CC2

VREG_1V2VREG_2V7

RESET

VSYS_VCONN STUSB4761

QFN-16 3x3 mm²

VSENSE_DISCH

ISENSE_DISCH

FB

OPTO_DRV

Benefits

• No software skills required

• Robustness to high voltage

• Configurable and flexible

• Easy industrialisation

• reduced PCB area and cost versus discrete (small

QFN 3x3 package

• Low pin count24 of 26

Dp1

Dn1

Dn2

Dp2

TX1+

TX1-

TX2-

TX2+

RX1+

RX1-

RX2-

RX2+

CC2

CC1

VBUS

VBUS

VBUS

VBUS

CC1

CC2

VB

US_

EN_S

RC

VSENSE_DISCHVDD

VBUS

ISEN

SE_D

ISC

H

VSRC

OPTO_DRVFB

comp.network

AC-DC

type-CPHY

Type-CFSM

Gatedriver

VBUS

monitoring

VCONN

Switch(200mA)

VCONN

protections(OVP, OCP)

Reg.File

Internalregulation

CV/CC

Over Temp

Discharge path

NTC

USB PDFSM

Rshunt

TSENSE

NVM

I²C

R

SBU1

SBU2

GND

GND GND

GND

Simplified schematic STUSB4761

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GaNWise Road map

• road map, next improvement steps and cost evaluation

2019 2020 2021 2022 2023 2024 2025

System cost(BOM $/W)

G1

G2

G3

650V / 5APower HalfBridge + Drivers 650V / 5A

Full bridge+ drivers

passives

G2 + passives

POWERANALOGDIGITAL

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drivers

Thank You

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